JPS60258987A - Semiconductor laser device and manufacture thereof - Google Patents
Semiconductor laser device and manufacture thereofInfo
- Publication number
- JPS60258987A JPS60258987A JP11447284A JP11447284A JPS60258987A JP S60258987 A JPS60258987 A JP S60258987A JP 11447284 A JP11447284 A JP 11447284A JP 11447284 A JP11447284 A JP 11447284A JP S60258987 A JPS60258987 A JP S60258987A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- type
- multilayer thin
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 239000012808 vapor phase Substances 0.000 claims abstract description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 16
- 239000013078 crystal Substances 0.000 abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 3
- 208000031481 Pathologic Constriction Diseases 0.000 abstract 2
- 239000010408 film Substances 0.000 description 7
- 238000005253 cladding Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 241000529569 Solena Species 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/205—Antiguided structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
- H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、各種電子機器、光学機器の光源として、近年
急速に用途が拡大し、需要の高まっている半導体レーザ
装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor laser device, which has been rapidly used as a light source for various electronic devices and optical devices in recent years, and is in increasing demand.
（従来例の構成とその問題点）
電子機器、光学機器のコヒーレント光源として半導体レ
ーザに要求される重要な性能の１つに単一スポットでの
発振、すなわち単−横モード発振があげられる。これを
実現するためには、レーザ光が伝播する活性領域付近に
レーザ素子中を流れる電流を集中するように、その拡が
りを抑制し、かつ光を閉じ込める必要がある。このよう
な半導体レーデは、通常、ストライプ型半導体レーザと
呼ばれている。(Constitution of Conventional Example and its Problems) One of the important performances required of a semiconductor laser as a coherent light source for electronic equipment and optical equipment is oscillation in a single spot, that is, single-transverse mode oscillation. In order to achieve this, it is necessary to suppress the spread and confine the light so that the current flowing through the laser element is concentrated near the active region where the laser light propagates. Such a semiconductor laser is usually called a stripe type semiconductor laser.
比較的簡単なストライプ化の方法に、電九狭さくだけを
用いるものがある。具体的には、ゾレーナ型半導体レー
デに、プロトン照射を施したもの、Ｚｎ拡散を施したも
の、酸化膜などの絶縁膜を形成したもの、結晶成長等に
より内部に電流狭さく領域をつく９つけたものが挙げら
れる。しかし々からこれらの方法にはそれぞれ重大な欠
点がある。A relatively simple method of striping is one that uses only electric nine-stripes. Specifically, solena type semiconductor radars have been subjected to proton irradiation, Zn diffusion, insulating films such as oxide films, and crystal growth to create internal current constriction regions. Things can be mentioned. However, each of these methods has significant drawbacks.
プロトン照射を施すと、プロトン照射時に半導体レーザ
の各層の一部の結晶が損傷を受け、半導体レーザの特性
を損う事がある。Ｚｎ拡散型の場合、７００〜８５０℃
というような高温でＺｎ拡散を行なう事が多く、ｚｎ等
のドー・やントが結晶中を移動したりして、ｐ／ｎ接合
を設計通り形成するのが難しいという問題がある。酸化
膜などの絶縁膜による方法は、前記二つの方法と比べ作
製された半導体レーザ中での電流狭さくの効果が弱い。When proton irradiation is applied, some crystals in each layer of the semiconductor laser are damaged during the proton irradiation, which may impair the characteristics of the semiconductor laser. For Zn diffusion type, 700-850℃
Zn diffusion is often carried out at such high temperatures that the dopant such as Zn moves through the crystal, making it difficult to form a p/n junction as designed. The method using an insulating film such as an oxide film has a weaker effect of narrowing the current in the fabricated semiconductor laser than the above two methods.
また、内部に結晶成長等により電流狭さく領域をつくり
つける方法は通常難しく、プロセスの途中で活性層など
の薄膜結晶を損傷したり、汚染したりする事が多く、工
業化には不向きである事が多い。Additionally, it is usually difficult to create a current confinement region internally by crystal growth, etc., and it often damages or contaminates thin film crystals such as active layers during the process, making it unsuitable for industrialization. many.
（発明の目的）
本発明は、上記欠点に鑑み、電流狭さく領域をｉ 作り
つけたストライプ構造を有し、しかも製造しやすい半導
体レーザ装置およびその製造方法を提供するものである
。(Object of the Invention) In view of the above-mentioned drawbacks, the present invention provides a semiconductor laser device having a striped structure in which a current constriction region is formed and is easy to manufacture, and a method for manufacturing the same.
（発明の構成）
この目的を達成するために本発明の半導体レーザ装置は
、半導体基板上に二重へテロ構造を含む多層薄膜が設け
られ、前記多層薄膜上に両側面が活性層を構成する材料
の禁制帯幅以下の禁制帯幅を有する材料でとり四重れた
メサ形状の電流狭さく用ストライプ構造が形成される構
成となっている。また、上記構成を容易ならしめ、本発
明の半導体レーザ装置の工業化を可能とするために、製
造方法として、半導体基板上に、有機金属気相エピタキ
シャル成長法または分子線エピタキシャル成長法によシ
ニ重へテロ構造を含む多層薄膜を形成する工程と、前記
多層薄膜にストライプ状メサ部を形成する工程と、前記
メサ部の側面に活性層より禁制帯幅が小さい材料からな
る層を有機金属気相エピタキシャル成長法または分子線
エピタキシャル成長法により形成する工程とをそなえた
ことを特徴としている。これらの構成と方法により、内
部に比較的強い電流狭さく用ストライプと効果的な光の
閉じ込め領域を有し、しかも、単−横モード発振、低し
きい値動作の半導体レーザ装置が実現できる。(Structure of the Invention) In order to achieve this object, a semiconductor laser device of the present invention includes a multilayer thin film including a double heterostructure provided on a semiconductor substrate, and active layers on both sides of the multilayer thin film. The structure is such that a four-fold mesa-shaped current constricting stripe structure is formed using a material having a forbidden band width that is less than the forbidden band width of the material. In addition, in order to simplify the above configuration and enable the industrialization of the semiconductor laser device of the present invention, as a manufacturing method, a thin double heterostructure is formed on a semiconductor substrate by a metal organic vapor phase epitaxial growth method or a molecular beam epitaxial growth method. a step of forming a multilayer thin film including a structure, a step of forming a striped mesa portion in the multilayer thin film, and a layer made of a material having a narrower band gap than the active layer on the side surface of the mesa portion by metal organic vapor phase epitaxial growth. Alternatively, it is characterized by having a step of forming by a molecular beam epitaxial growth method. With these configurations and methods, it is possible to realize a semiconductor laser device which has a relatively strong current confining stripe and an effective light confinement region inside, and which oscillates in a single transverse mode and operates at a low threshold.
（実施例の説明）
以下、本発明の一実施例について、図面を参照しながら
説明する。第１図は本発明の実施例における半導体レー
ザ装置の断面図を示す。(Description of Embodiment) Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a cross-sectional view of a semiconductor laser device in an embodiment of the present invention.
ここでは半導体基板として、ｎ型ＧａＡｓ基板（キャリ
ア濃度〜１０１８ｃｍ−３程度）を用いる例について述
べる。基板１０上に有機金属気相エピタキシャル成長法
（以下ＭＯＣＶＤ法とする）により、第２図に示すよう
に、ｎ 型ＧａＡｓバッファ層１９（キャリア濃度〜１
０ｔ−Ｉｎ 程度）を１μｍ、ｎ型Ｇａ １１Ｍ込ｓク
ラッド層１１を１．５μｍ１アンド−ｆ Ｇａ１７Ａｔ
ｙＡ ８活性層１２（０≦ｙ＜Ｘ；ｙ＜ｚ）をｏ、ｉμ
ｍｚ ｐ型Ｇａ １１ｕｚＡｓクラッＰ層１３％−１，
５８ｍ１Ｐ型ＧａＡｓ層１６を０．５μｍ１エピタキシ
ヤル成長させた。この時のＭＯＣＶＤ法による結晶成長
条件の一例を示すと、成長速度２μｍ／時、成長温度７
７０℃、全Ｇａｓ流量５ｔ／分、■族元素に対するＶ族
元素のモル比は４０である。その後、第２図に示すよう
に、ｐ（５）
型ＧａＡｓ層１６上にピッチ３００μｒｒ＋１幅５μｍ
でフォトレジストを残し、第３図のようにエツチングす
る。第３図で、ｐ型Ｇａ１−、ＬＡｔｚＡｓクラッド層
１３の膜厚は０．３μｍとなるようにする。これは、膜
厚制御性の良いＭＯＣＶＤ法による結晶成長では再現性
よく実現できる。なお、Ｇａ、−ｙＡｔアＡｓ活性層１
２を露出しない理由は、エツチングや、結晶成長の時に
損傷を避けるためである。フォトレジストを除去し、表
面洗浄した後、再びＭＯＣＶＤ法により、活性層を構成
する材料の禁制帯幅以下である高抵抗ＧａＡｓ層１５又
は、Ｇａ １−ｖＡｔｖＡｓ層１５（ｏ≦ｙ＜Ｘ＜υ；
２〈υ）を前述の成長条件で、第３図のりツノ部分が十
分に埋まるように結晶成長を行なう。その後、フォトレ
ジスト２１を塗布し、リッジ直上七個の部分でのレジス
ト膜の厚みの差を利用して、露光条件を最適化してリッ
ジ直上のみ、レジスト膜を除去し、その後エツチングに
よシ、リッジ部分を取シ除き、第１図のような素子を作
製した。そして、ｎ型ＧａＡｓ基板表面１８及び結晶成
長面１７にそれぞれ、オーミック電極を取υ付け、電流
を流（６）
した。この時、ストライプ幅Ｗで電流がｐ型Ｇａ１−２
Ａ！−２Ａｓ領域（］４）にのみ狭さくされる。これは
、電流狭さく領域１４の抵抗率が高抵抗ＧａＡｓ層１５
又は、Ｇａ １−ｖＡ７ｖＡｓ層１５に比べ、約３桁低
いことによる。また、電流狭さく領域１４には、高抵抗
ＧａＡｓ層１５により光が吸収されるため光の閉じ込め
効果もあり、３０ｍＡの低しきい値で、単−横モード発
振する半導体レーザ装置が得られた。Here, an example will be described in which an n-type GaAs substrate (carrier concentration ~1018 cm-3) is used as the semiconductor substrate. As shown in FIG. 2, an n-type GaAs buffer layer 19 (carrier concentration ~1
(about 0t-In) is 1 μm, n-type Ga 11M included s cladding layer 11 is 1.5 μm 1&-f Ga17At
yA 8 active layer 12 (0≦y<X;y<z) as o, iμ
mz p-type Ga 11uzAs crack P layer 13%-1,
A 58m1 P-type GaAs layer 16 was epitaxially grown to a thickness of 0.5 μm. An example of crystal growth conditions using the MOCVD method at this time is a growth rate of 2 μm/hour, a growth temperature of 7.
The temperature was 70° C., the total gas flow rate was 5 t/min, and the molar ratio of group V elements to group II elements was 40. Thereafter, as shown in FIG. 2, a layer of 300 μrr pitch + 5 μm width
The photoresist is left behind and etched as shown in Figure 3. In FIG. 3, the thickness of the p-type Ga1-, LAtzAs cladding layer 13 is set to 0.3 μm. This can be achieved with good reproducibility by crystal growth using the MOCVD method, which has good film thickness controllability. Note that Ga, -yAt and As active layers 1
The reason why 2 is not exposed is to avoid damage during etching and crystal growth. After removing the photoresist and cleaning the surface, a high resistance GaAs layer 15 or a Ga 1-vAtvAs layer 15 (o≦y<X<υ ;
2〈υ) under the above-mentioned growth conditions, the crystal is grown so that the horn portion shown in Fig. 3 is sufficiently filled. After that, a photoresist 21 is applied, and using the difference in the thickness of the resist film in the seven areas directly above the ridge, the exposure conditions are optimized to remove the resist film only directly above the ridge, and then etching is performed. The ridge portion was removed to produce a device as shown in FIG. Then, ohmic electrodes were attached to the n-type GaAs substrate surface 18 and the crystal growth surface 17, respectively, and a current was applied (6). At this time, the current is p-type Ga1-2 with stripe width W
A! It is narrowed only to the −2As region (]4). This is because the resistivity of the current confinement region 14 is higher than that of the high resistance GaAs layer 15.
Alternatively, it is about three orders of magnitude lower than that of the Ga 1-vA7vAs layer 15. Furthermore, since light is absorbed by the high-resistance GaAs layer 15 in the current constriction region 14, there is also a light confinement effect, and a semiconductor laser device that oscillates in a single transverse mode with a low threshold of 30 mA was obtained.
また、本実施例では、ＧａＡｓ系、ＧａＡｔＡｓ系半導
体レーザについて述べたが、■ｎＰ系や他の多元混晶系
を含む化合物半導体を材料とする半導体レーザについて
も同様に本発明を適用することが可能である。さらに導
電性基板としてｐ型基板を用いても、半絶縁性基板を用
いてもよく、結晶成長を行なうのに、他の物質供給律速
の結晶成長方法、たとえば分子線エピタキシャル成長法
（通常ＭＢＥ法と呼ばれる。）を用いてもよい。Further, in this embodiment, GaAs-based and GaAtAs-based semiconductor lasers have been described, but the present invention can be similarly applied to semiconductor lasers made of compound semiconductors including nP-based and other multi-component mixed crystal systems. It is possible. Furthermore, a p-type substrate or a semi-insulating substrate may be used as the conductive substrate, and other material supply rate-limited crystal growth methods such as molecular beam epitaxial growth (usually MBE method) may be used for crystal growth. ) may also be used.
ｊ （発明の効果）
本発明の半導体レーザ装置およびその製造方法は１．低
しきい値で単−横モード発振する半導体レーザ装置を工
業化しゃすい構造で提供するものであり、その実用的効
果は著しい。j (Effects of the Invention) The semiconductor laser device and the manufacturing method thereof of the present invention are as follows:1. The present invention provides a semiconductor laser device that oscillates in a single transverse mode at a low threshold value and has a structure that is easy to industrialize, and its practical effects are remarkable.
第１図は、本実施例で述べた半導体レーザ装置を示す図
、第２図〜第４図は、その製造過程を示す図である。
１０− ｎ型ＧａＡｓ基板、］ Ｉ −ｎ型Ｇａ １−
ＸＡｌ−ｘＡｓクラッド層、１２・・・Ｇａ１−μｙＡ
ｓ活性層、１３・・・ｐ型Ｇａ １−２ＡＩ−２Ａｓク
ラッド層、１４・・・電流狭さく領域、１５ ・・・高
抵抗ＧａＡｓ層又はＧａ １ ｖＡ４ｋｓ層、１６・ｐ
型ＧａＡｓ層、１７・・・結晶成長表面、１８・・・基
板表面、１９・・・ｎ Ｗ ＧａＡｓ バッファ層、２
０．２１・・・フォトレジスト、ｗ・・・電流狭さくス
トライプ幅、ｔ・・・フォトレジストマスクの幅。
第１図
第２図
−
第３ 図FIG. 1 is a diagram showing the semiconductor laser device described in this embodiment, and FIGS. 2 to 4 are diagrams showing the manufacturing process thereof. 10- n-type GaAs substrate,] I - n-type Ga 1-
XAl-xAs cladding layer, 12...Ga1-μyA
s active layer, 13...p-type Ga1-2AI-2As cladding layer, 14...current confinement region, 15...high resistance GaAs layer or Ga1vA4ks layer, 16.p
Type GaAs layer, 17... Crystal growth surface, 18... Substrate surface, 19... n W GaAs buffer layer, 2
0.21... Photoresist, w... Current narrowing stripe width, t... Width of photoresist mask. Figure 1 Figure 2 - Figure 3
Claims (2)
設けられ、前記多層薄膜上に両側面が活性層を構成する
材料の禁制帯幅以下の禁制帯幅を有する材料でとシ囲ま
れたメサ形状の電流狭さく用ストライプ構造が形成され
ていることを特徴とする半導体レーザ装置。(1) A multilayer thin film including a double heterostructure is provided on a semiconductor substrate, and both sides of the multilayer thin film are surrounded by a material having a forbidden band width equal to or less than the forbidden band width of the material constituting the active layer. A semiconductor laser device characterized in that a mesa-shaped current confinement stripe structure is formed.
長法または分子１良エピタキシヤル成長法によシニ重へ
テロ構造を含む多層薄膜を形成する工程と、前記多層薄
膜にストライプ状メサ部を形成する工程と、前記メサ部
の側面に活性層よシ禁制帯幅が小さい材料からなる層を
有機金属気相エピタキシャル成長法まｔは分子線エピタ
キシャル成長法によシ形成する工程とを有することを特
徴とする半導体レーザ装置の製造方法。(2) Forming a multilayer thin film including a double heterostructure on a semiconductor substrate by a metal organic vapor phase epitaxial growth method or a molecular one-layer epitaxial growth method, and forming a striped mesa portion in the multilayer thin film. and a step of forming a layer made of a material whose forbidden band width is smaller than that of the active layer on the side surface of the mesa portion by metal organic vapor phase epitaxial growth method or molecular beam epitaxial growth method. A method for manufacturing a semiconductor laser device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11447284A JPS60258987A (en) | 1984-06-06 | 1984-06-06 | Semiconductor laser device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11447284A JPS60258987A (en) | 1984-06-06 | 1984-06-06 | Semiconductor laser device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60258987A true JPS60258987A (en) | 1985-12-20 |
Family
ID=14638585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11447284A Pending JPS60258987A (en) | 1984-06-06 | 1984-06-06 | Semiconductor laser device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60258987A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63258092A (en) * | 1987-04-02 | 1988-10-25 | ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド | Reverse channel substrate planar semiconductor laser |
| US4910743A (en) * | 1986-02-28 | 1990-03-20 | Kabushiki Kaisha Toshiba | Semiconductor laser with mesa stripe waveguide structure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57152180A (en) * | 1981-03-16 | 1982-09-20 | Nec Corp | Manufacture of semiconductor laser device |
-
1984
- 1984-06-06 JP JP11447284A patent/JPS60258987A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57152180A (en) * | 1981-03-16 | 1982-09-20 | Nec Corp | Manufacture of semiconductor laser device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4910743A (en) * | 1986-02-28 | 1990-03-20 | Kabushiki Kaisha Toshiba | Semiconductor laser with mesa stripe waveguide structure |
| JPS63258092A (en) * | 1987-04-02 | 1988-10-25 | ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド | Reverse channel substrate planar semiconductor laser |
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