JPS60244107A - Control circuit of high frequency electric power - Google Patents
Control circuit of high frequency electric powerInfo
- Publication number
- JPS60244107A JPS60244107A JP9991784A JP9991784A JPS60244107A JP S60244107 A JPS60244107 A JP S60244107A JP 9991784 A JP9991784 A JP 9991784A JP 9991784 A JP9991784 A JP 9991784A JP S60244107 A JPS60244107 A JP S60244107A
- Authority
- JP
- Japan
- Prior art keywords
- power
- frequency
- voltage
- reference voltage
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims abstract description 10
- 230000003321 amplification Effects 0.000 claims description 16
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 4
- 239000000284 extract Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
Landscapes
- Control Of Amplification And Gain Control (AREA)
Abstract
Description
【発明の詳細な説明】
(技術分野)
本発明は、自動車電話装置等の移動通信装置の送信電力
等高周波電力の制御をする回路に関する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a circuit for controlling high frequency power such as transmission power of a mobile communication device such as a car telephone device.
(従来技術)
従来、移動通信装置の送信電力制御は、定常出力設定が
行なえればよく、また通話チャンネル数は多くても20
チャンネル程度であった。しかし、近年移動局が基地局
に近づいたとき、基地局での相互変調や混変調の防止の
ために、基地局からの指令あるいは移動局自身が電界検
出全行なって、移動局の送信電力を低下させるようにな
ってきている。また、送信電力の可変範囲は10dB〜
30dBと広くなって来ており、その可変範囲を数dB
単位に2〜8段階程度に区分して切替え全行なうように
なってきている。さらに、通話チャネル数も大幅に増加
されて300チャンネル〜1000チャネル程度に広が
ることによって、使用周波数帯域幅も、従来の2MHz
〜3MHzから、20MHz〜40MHz ?!l:
広帯域化されるようになってきている。(Prior art) Conventionally, transmission power control of mobile communication devices only requires constant output setting, and the number of communication channels is 20 at most.
It was about a channel. However, in recent years, when a mobile station approaches a base station, in order to prevent intermodulation and cross-modulation at the base station, either the base station sends a command or the mobile station itself performs electric field detection to reduce the mobile station's transmission power. It is starting to decline. In addition, the variable range of transmission power is from 10 dB to
It has become wider at 30 dB, and the variable range has been increased by several dB.
Increasingly, each unit is divided into 2 to 8 stages and all switching is performed. Furthermore, the number of communication channels has been significantly increased to about 300 to 1000 channels, and the frequency bandwidth used has also been reduced from the conventional 2MHz.
~3MHz to 20MHz~40MHz? ! l:
Bandwidth is becoming increasingly widespread.
さて、送信電力等の高周波電力の制御を行なう方式とし
ては、電力増幅部の最終段の後に可変減衰器全挿入する
方式や、電力増幅部に流れる電流−に制御することによ
って、電力全制御する方式があるが、前者は高価になり
、また後者は、周波数′によって電力増幅率が変動する
という電力増幅部の特性がそのtま送信出力に出るから
広帯域化が難しい(帯域内における電力偏差が著しく大
きい)という欠点があった。別の高周波電力制御の方式
としては、出力電力の一部全取り出し検波を行ない、得
られた検波電圧と予め定められた基準電圧とを誤差増幅
部で比較増幅し、前記誤差増幅部よりの出力信号を用い
て出力電力が一定になるよう電力増幅部全制御する回路
構成を持たせるものがあった。この方式では、検波電圧
が周波数特性?持っており、基準電圧が一定でおるから
帯域内での電力偏差かやFiり相当生じるという欠点が
あった。しかも電力可変範囲ケ大きくとると、電力の帯
域内偏差は増大し、電力が30dB変わると、使用帯域
内における電力偏差は、電力が一定である場合に比べて
、5〜6倍に増大していた○前述の従来の高周波電力制
御回路では、高周波電力の指定がいずれの方式でもアナ
ログ回路でなされていた。そこで、電力指定区分が多く
ても8段階程度であり、しかもその精度が悪く、回路が
大きかった。Now, as a method for controlling high frequency power such as transmission power, there is a method in which all variable attenuators are inserted after the final stage of the power amplification section, and a method in which the current flowing through the power amplification section is controlled to control the total power. There are several methods, but the former is expensive, and the latter is difficult to widen the band because the characteristic of the power amplification section that the power amplification factor varies depending on the frequency is immediately reflected in the transmission output (the power deviation within the band is It had the disadvantage of being extremely large. Another high-frequency power control method is to perform detection by extracting a portion of the output power, compare and amplify the obtained detected voltage and a predetermined reference voltage in an error amplification section, and output the output from the error amplification section. Some had a circuit configuration that used signals to control the entire power amplification section so that the output power was constant. In this method, does the detected voltage have frequency characteristics? However, since the reference voltage remains constant, there is a disadvantage that a considerable amount of power deviation occurs within the band. Moreover, when the power variable range is widened, the within-band deviation of power increases, and when the power changes by 30 dB, the power deviation within the used band increases by 5 to 6 times compared to when the power is constant. In the conventional high-frequency power control circuits described above, the high-frequency power is specified by an analog circuit in either method. Therefore, the number of power specification classifications was about eight at most, and the accuracy was poor and the circuit was large.
(発明の目的)
本発明の目的は、高周波電力が多数の段階に精度よく指
定できる高周波電力制御回路の提供にらるO
(発明の構成)
本発明の構成は、高周波信号の電力全増幅する電力増幅
部と、この電力増幅部の出力である高周波電力の一部全
抽出する抽出部と、この抽出部で抽出された前記高周波
電力の一部?検波する検波部と、前記高周波電力の指定
値に応じた大きさの基準電圧全発生する基準電圧発生部
と、前記検波部の出力電圧と前記基準電圧との差の電圧
全発生する差電圧発生部と、前記差電圧が小さくなる方
向に前記電力増幅部全制御する制御部とが備えである高
周波電力制御回路において、前記基準電圧発生部は記憶
回路と肱変換回路とからなム前記記憶回路には前記基準
電圧全表すディジタル値が記憶してあり、前記ルr変換
回路は前記ディジタル値全前記基準電圧に変換すること
全特徴とする0
(実施例)
次に実施例全挙げ本発明の詳細な説明する0第1図は本
発明の一実施例?示すブロック図である。この実施例に
おいて、1は電力増幅部、2は電源電圧制御部、3は誤
差増幅部、4はコンデンサ、5は抵抗、6は検波用ダイ
オード、7及び8はストリップライン、9は抵抗、10
はアンテナ、11は高周波信号入力端子、12は電源端
子、13は”/A変換部、14は記憶部、15は指定電
力情報入力端子、16は指定周波数情報入力端子である
。(Object of the Invention) An object of the present invention is to provide a high-frequency power control circuit that can specify high-frequency power to a large number of stages with high precision. A power amplification section, an extraction section that extracts part or all of the high frequency power output from the power amplification section, and a portion of the high frequency power extracted by the extraction section? a detection section that detects a wave; a reference voltage generation section that generates a reference voltage having a magnitude corresponding to the designated value of the high-frequency power; and a differential voltage generation section that generates a voltage that is the difference between the output voltage of the detection section and the reference voltage. In the high frequency power control circuit, the reference voltage generation section includes a storage circuit and a conversion circuit, and a control section that controls all of the power amplification sections in a direction in which the differential voltage becomes smaller. has stored digital values representing all of the reference voltages, and the R conversion circuit converts all of the digital values into the reference voltages (Embodiments) Next, all embodiments of the present invention will be described. Detailed explanation 0 Is Figure 1 an embodiment of the present invention? FIG. In this embodiment, 1 is a power amplification section, 2 is a power supply voltage control section, 3 is an error amplification section, 4 is a capacitor, 5 is a resistor, 6 is a detection diode, 7 and 8 are strip lines, 9 is a resistor, 10
1 is an antenna, 11 is a high frequency signal input terminal, 12 is a power supply terminal, 13 is an "/A converter section, 14 is a storage section, 15 is a designated power information input terminal, and 16 is a designated frequency information input terminal.
ストリップライン7.8によって構成されたカップラー
より、電力増幅部1で増幅された高周波信号101の一
部を検出し、検波用ダイオード6で検波して、検波電圧
Vd’t”得る〇一方、高周波信号101を所定の電力
にすること全指示するために、指定電力情報が端子15
に加えられる0また、入力高周波信号100゛の周波数
がいくらであるかを示すために、指定周波数情報が端子
16に加えられる。記憶部14には、指定電力情報15
1及び指定周波数情報161で定まる番地に、両情報に
対応して定まるディジタル値が予め記憶しである。記憶
部14は画情報151,161で番地が指定されると、
その番地のディジタル値全読み出しψA変換部13に加
える。”/A変換部13はそのディジタル値全基準電圧
vrfに変換する。基準電圧Vrfと検波電圧Vdとが
、誤差増幅部3にて比較され、両電圧の差が増幅される
。誤差増幅部3の出力信号103によって、電源電圧制
御部2を制御することにより、電力増幅部1の電源電圧
が制御される。以上の動作によって、出力電力は高周波
信号100の周波数にかかわらず一定に保持される。記
憶部14に、周波数による電力偏差の補正労金子め記憶
させておくことにより、帯域内での電力偏差は補正され
る。また、必要な電力偏差に応じて、記憶部14の情報
量及び、”/A変換部13の精度全選択する。A part of the high frequency signal 101 amplified by the power amplifying section 1 is detected by the coupler configured by the strip line 7.8, and detected by the detection diode 6 to obtain the detection voltage Vd't''.On the other hand, In order to instruct the high frequency signal 101 to have a predetermined power, specified power information is sent to the terminal 15.
Also, designated frequency information is applied to terminal 16 to indicate what the frequency of the input high frequency signal 100' is. The storage unit 14 stores designated power information 15.
1 and the designated frequency information 161, a digital value determined corresponding to both information is stored in advance. When the address is specified in the image information 151, 161, the storage unit 14 stores
All digital values at that address are read out and added to the ψA converter 13. The /A converter 13 converts the entire digital value into a reference voltage vrf.The reference voltage Vrf and the detected voltage Vd are compared in the error amplifier 3, and the difference between the two voltages is amplified.Error amplifier 3 The power supply voltage of the power amplifier section 1 is controlled by controlling the power supply voltage control section 2 using the output signal 103 of The power deviation within the band is corrected by storing the correction information for power deviation depending on the frequency in the storage unit 14. Also, the amount of information in the storage unit 14 and , ”Select all precisions of the /A converter 13.
第2図は第1図実施例を一層具体化した例を示す詳細ブ
ロック図である。指定電力情報は3ピツトのデータから
なり、これら各ビットは端子38゜39.40に加えら
れる。指定周波数情報は2ビツトのデータであり、これ
ら各ビットは端子41゜42に加えられる。記憶部14
はROM(読出し専用メモリ)である。”/A変換部1
3は、スイッチアレイ36と、電源37と、抵抗19〜
35゜演算増幅器17にて構成しである。FIG. 2 is a detailed block diagram showing a more specific example of the embodiment shown in FIG. The designated power information consists of three bits of data, each of which is applied to a terminal 38°39.40. The designated frequency information is 2-bit data, and each of these bits is applied to terminals 41 and 42. Storage unit 14
is a ROM (read-only memory). ”/A converter 1
3 is a switch array 36, a power supply 37, and resistors 19 to 3.
It consists of a 35° operational amplifier 17.
第1図の実施例及び第2図の具体例で社、高周波電力及
び周波数の指定がディジタルの情報151及び161で
なされ、また記憶部14に記憶しであるディジタル値に
基づき基準電圧vrfが設定されるから、°高周波、を
力が極めて多数の段階に精度よく指定できる。そして、
その基準電圧■rfは、高周波電力だけでなく周波数を
考慮して設定されるから、電力増幅部1の増幅率が周波
数によって変動しても、高周波信号101における周波
数による電力偏差は小さい。可変電力範囲が30dB程
度に広くても、指定電力情報151に応じた任意のディ
ジタル値が記憶部14に記憶できるから、低電力におい
ても電力増幅部1の特性孕補償1〜で帯域内電力偏差全
必要な値にすることができる。In the embodiment shown in FIG. 1 and the specific example shown in FIG. Because of the high frequency, the force can be specified with great precision into an extremely large number of stages. and,
Since the reference voltage ■rf is set taking into account not only the high frequency power but also the frequency, even if the amplification factor of the power amplifying section 1 varies depending on the frequency, the power deviation due to the frequency in the high frequency signal 101 is small. Even if the variable power range is as wide as about 30 dB, any digital value according to the designated power information 151 can be stored in the storage unit 14, so even at low power, the in-band power deviation can be reduced by the characteristic compensation 1~ of the power amplifier unit 1. Can be any value you want.
可変電力範囲は、指定電力情報151のビット数、記憶
部14の記憶容量及び少r変換部130ビット数によっ
て定まるから、任意の値に選ぶことができる。本実施例
は、基準電圧発生回路の主要部がディジタル回路である
から、従来のアナログ回路方式に比べ、はるかに小さく
、信頼性が高い。The variable power range is determined by the number of bits of the specified power information 151, the storage capacity of the storage unit 14, and the number of bits of the small r conversion unit 130, and therefore can be selected to be any value. In this embodiment, since the main part of the reference voltage generation circuit is a digital circuit, it is much smaller and more reliable than the conventional analog circuit system.
(発明の効果)
本発明によれば、以上に説明したように、高周波電力が
多数の段階に精度I〈指定できる高周波電力制御回路が
提供できる。(Effects of the Invention) According to the present invention, as described above, it is possible to provide a high frequency power control circuit in which high frequency power can be specified with precision I< in a large number of stages.
第1図は本発明の一実施例を示すブロック図、第2図は
第1図実施例の一部全一層具体化した例を示す詳細ブロ
ック図である。
6・・・検波用ダイオード、7,8・・・ストリップラ
イン、10・・・アンテナ、11・・・高周波信号入力
端子、12・・・電源端子、15・・・指定電力情報入
力端子、16・・・指定周波数情報入力端子、17・・
・演算増幅器、36・・・スイッチアレイ、37・・・
基準電源、38〜40・・・指定電力情報入力端子、4
1〜42・・・指定周波数情報入力端子。FIG. 1 is a block diagram showing one embodiment of the present invention, and FIG. 2 is a detailed block diagram showing an example in which part and all of the embodiment of FIG. 1 is further embodied. 6... Detection diode, 7, 8... Strip line, 10... Antenna, 11... High frequency signal input terminal, 12... Power supply terminal, 15... Specified power information input terminal, 16 ...Specified frequency information input terminal, 17...
- Operational amplifier, 36... Switch array, 37...
Reference power supply, 38-40...Specified power information input terminal, 4
1 to 42...Specified frequency information input terminal.
Claims (1)
電力増幅部の出力でちる高周波電力の一部全抽出する抽
出部と、この抽出部で抽出された前記高周波電力の一部
を検波する検波部と、前記高周波電力の指定値に応じた
大きさの基準電圧を発生する基準電圧発生部と、前記検
波部の出力電圧と前記基準電圧との差の電圧を発生する
差電圧発生部と、前記差電圧が小さくなる方向に前記電
力増幅部全制御する制御部とが備えである高周波電力制
御回路において、前記基準電圧発生部は記憶回路と”/
A変換回路とからなシ、前記記憶回路には前記基準電圧
を表すディジタル値が記憶してあム前記”/A変換回路
は前記ディジタル値全前記基準電圧に変換することt−
特徴とする高周波電力制御回路。 (2、特許請求の範囲第1項記載の高周波電力制御回路
において、前記記憶回路は、前記高周波電′力の一つの
指定値について、前記高周波信号の周波数に応じた少な
くとも2つの互いに異なる前記ディジタル値全記憶して
おり、前記記憶回路において前記ディジタル値が記憶さ
れる番地は前記指定値及び前記周波数の指定値で定まり
、前記記憶回路は前記高周波電力及び前記周波数の指定
値に応じて前記番地から前記ディジタル値を読み出し前
記”/A変換器に送出することを特徴とする高周波電力
制御回路。(1) A power amplification section that fully amplifies the power of a high-frequency signal, an extraction section that extracts a part or all of the high-frequency power generated by the output of this power amplification section, and a portion of the high-frequency power extracted by this extraction section that is detected. a reference voltage generation section that generates a reference voltage of a magnitude corresponding to the specified value of the high frequency power, and a difference voltage generation section that generates a voltage that is the difference between the output voltage of the detection section and the reference voltage. and a control section that controls all of the power amplification sections in a direction in which the differential voltage becomes smaller, the reference voltage generation section includes a memory circuit and a "/"/
Unlike the A conversion circuit, the storage circuit stores a digital value representing the reference voltage, and the A conversion circuit converts all of the digital values into the reference voltage.
Features a high-frequency power control circuit. (2. In the high-frequency power control circuit according to claim 1, the storage circuit stores at least two different digital signals according to the frequency of the high-frequency signal for one specified value of the high-frequency electric power. The address where the digital value is stored in the storage circuit is determined by the specified value and the specified value of the frequency, and the storage circuit stores the address according to the specified value of the high frequency power and the frequency. A high-frequency power control circuit, characterized in that the digital value is read out from the RF power control circuit and sent to the A/A converter.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9991784A JPS60244107A (en) | 1984-05-18 | 1984-05-18 | Control circuit of high frequency electric power |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9991784A JPS60244107A (en) | 1984-05-18 | 1984-05-18 | Control circuit of high frequency electric power |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60244107A true JPS60244107A (en) | 1985-12-04 |
Family
ID=14260128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9991784A Pending JPS60244107A (en) | 1984-05-18 | 1984-05-18 | Control circuit of high frequency electric power |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60244107A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2620283A1 (en) * | 1987-09-08 | 1989-03-10 | Thomson Csf | DEVICE FOR CONTROLLING THE OUTPUT POWER OF AN AMPLIFIER OPERATING IN CLASS C |
WO1990006018A1 (en) * | 1988-11-17 | 1990-05-31 | Motorola, Inc. | Power amplifier for a radio frequency signal |
US5117202A (en) * | 1990-01-24 | 1992-05-26 | Fujitsu Limited | Automatic level control circuit |
US5136257A (en) * | 1988-12-08 | 1992-08-04 | Hewlett-Packard Company | RF amplifier bias circuit |
JPH0590853A (en) * | 1991-09-27 | 1993-04-09 | Nec Corp | Power amplifier |
JPH05206771A (en) * | 1992-01-30 | 1993-08-13 | Mitsubishi Electric Corp | Automatic output power control circuit |
US5334979A (en) * | 1991-08-30 | 1994-08-02 | Nec Corporation | Power controller |
EP0684707A1 (en) * | 1994-05-28 | 1995-11-29 | Nortel Networks Corporation | Antenne array for a cellular radio base station with transmission power control |
US5603106A (en) * | 1989-09-06 | 1997-02-11 | Fujitsu Limited | Adjustable transmission power control circuit |
US5652547A (en) * | 1995-06-20 | 1997-07-29 | Motorola, Inc. | Current comparator automatic output control |
CN104113226A (en) * | 2013-04-17 | 2014-10-22 | 瑞萨电子株式会社 | Semiconductor device and inverter system |
-
1984
- 1984-05-18 JP JP9991784A patent/JPS60244107A/en active Pending
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2620283A1 (en) * | 1987-09-08 | 1989-03-10 | Thomson Csf | DEVICE FOR CONTROLLING THE OUTPUT POWER OF AN AMPLIFIER OPERATING IN CLASS C |
WO1990006018A1 (en) * | 1988-11-17 | 1990-05-31 | Motorola, Inc. | Power amplifier for a radio frequency signal |
US4992753A (en) * | 1988-11-17 | 1991-02-12 | Motorola, Inc. | Power amplifier for a radio frequency signal |
US5136257A (en) * | 1988-12-08 | 1992-08-04 | Hewlett-Packard Company | RF amplifier bias circuit |
US5603106A (en) * | 1989-09-06 | 1997-02-11 | Fujitsu Limited | Adjustable transmission power control circuit |
US5117202A (en) * | 1990-01-24 | 1992-05-26 | Fujitsu Limited | Automatic level control circuit |
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EP0684707A1 (en) * | 1994-05-28 | 1995-11-29 | Nortel Networks Corporation | Antenne array for a cellular radio base station with transmission power control |
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CN104113226A (en) * | 2013-04-17 | 2014-10-22 | 瑞萨电子株式会社 | Semiconductor device and inverter system |
JP2014212397A (en) * | 2013-04-17 | 2014-11-13 | ルネサスエレクトロニクス株式会社 | Semiconductor device and inverter system |
CN104113226B (en) * | 2013-04-17 | 2019-02-05 | 瑞萨电子株式会社 | Semiconductor Devices and Inverter Systems |
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