JPS60244018A - Cluster ion beam evaporation device - Google Patents

Abstract

PURPOSE:To perform cluster ion beam evaporation of even a material of high boiling point or sublimating point by a method wherein an injection nozzle is opened in a partition wall isolating an evaporation chamber and a vaporization source chamber, and a valve to be used both as a shutter and to open and close the injection nozzle is provided to the partition wall. CONSTITUTION:A nozzle 7 provided between an evaporation chamber 14 and a vaporization source chamber 16 is closed according to a valve 12 to be used both as a shutter, the inside of the evaporation chamber 14 is exhausted up to a superhigh vacuum according to an exhaust system 11a, and the inside of the vaporization source chamber 16 is exhausted up to a high vacuum according to an exhaust system 11b. An electron beam is projected to an evaporating material 9 to vaporize the evaporating material, and when the valve 12 to be used both as the shutter is opened controlling the inside of a space part 15, the vaporized evaporating material in the space part 15 is drawn out to a superhigh vacuum passing through the nozzle 7, and the evaporating material forms a cluster according to a supercooling phenomenon to be generated according to adiabatic expansion. Because the electron beam is projected directly to the evaporating material like this, cluster ion beam evaporation can be performed even with a material of high boiling point and high sublimating point.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a vacuum evaporation apparatus, particularly a cluster ion beam evaporation apparatus.

[Prior art]

As shown in FIG. 2, the cluster ion beam evaporation apparatus heats and vaporizes a vapor deposition material 9 in a crucible 8, and injects the vaporized vapor deposition material into a high vacuum from a nozzle 7 of the crucible, thereby forming a lumpy source of the vapor deposition material. (1) + Form a child group (cluster). This is irradiated with electrons by the ionization electron emitting filament 5 and the ionization electron extraction grid 6, so that one of the atoms forming a cluster is
This device ionizes atoms into cluster ions, accelerates the cluster ions with a negative voltage applied to the accelerating electrode 4, and causes them to collide with the non-ionized clusters on the substrate 2 for vapor deposition. This vacuum evaporation equipment can not only control the deposition rate, but also the ratio of cluster ions to neutral clusters that do not ionize (ionization rate) and the kinetic energy of cluster ions and neutral clusters, and the physical properties of the formed film. It has the advantage of being able to control various crystallographic properties. However, in order to form clusters, it is necessary to inject the deposition material from a nozzle into a high vacuum.
The method for evaporating the vapor deposition material is to place the vapor deposition material 9 in a crucible 8 made of silicon carbide or the like, and heat the outer wall of the crucible by irradiating electrons with an electron emitting filament 10 for heating the crucible to evaporate the vapor deposition material. A method is being taken to For this reason, cluster ion beam evaporation equipment! Although 7(2) has many advantages, it has the limitation that only substances whose boiling point or sublimation point are sufficiently lower than the melting point of the crucible can be used as vapor deposition substances.

[Purpose of the invention]

The present invention aims to improve this drawback of the cluster ion beam evaporation apparatus, and provides an apparatus capable of performing cluster ion beam evaporation even with substances having a high boiling point or sublimation point.

[Structure of the invention]

In the present invention, an evaporation chamber that accommodates a substrate for evaporation and an evaporation source chamber that is equipped with an electron beam heating device that evaporates the evaporation material are formed in the main body of the apparatus, and the evaporation material is evaporated on a partition wall separating the two chambers. This cluster ion beam evaporation apparatus is characterized in that a partition wall is provided with pulp that also serves as a shutter for opening and closing an injection nozzle that ejects the injection nozzle into a room.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a structural diagram of the vacuum evaporation apparatus of this embodiment. The inside of the vapor deposition apparatus main body M is divided into an evaporation source chamber 16 and a vapor deposition chamber 14 by a partition wall 17, each of which has a separate exhaust system 1.
1α and 11b are connected. Inside the evaporation source chamber 16, there is a space 1 surrounded by a wall to prevent the evaporated deposition material 9 from escaping.
5 is formed, and an electron beam heating device 13 is installed to heat and evaporate the deposition material 9 by directly applying an electron beam to it.

An injection nozzle 7 for ejecting the evaporated substance into the deposition chamber is opened in a partition wall 17 at the upper part of the space 15, and a shutter-cum-pulp 12 for opening and closing the nozzle 7 is provided in the partition wall 17. In the deposition chamber, the ionization part of the ionization electron emitting filament 6 and the ionization electron extraction grid 5, the ion acceleration electrode 4, the substrate holder 1, and the substrate 2 are arranged in the same manner as in the conventional apparatus. It is installed in the section 15.

Vapor deposition is performed using this apparatus as follows.

Nozzle 7 provided between vapor deposition chamber 14 and evaporation source chamber 16
is closed by the pulp shutter 12, and the inside of the evaporation chamber 14 is evacuated to an ultra-high vacuum of 5 X 10''9 Torr or less by the exhaust system 11α, and the inside of the evaporation source chamber 16 is evacuated to about I X 10'-6 Torr by the exhaust system 11b. Evacuate to high vacuum. Next, the vapor deposition material 9 is irradiated with an electron beam to evaporate the vapor deposition material, and the inside of the space 15 is 5×10−5
When the shutter pulp 12 is opened while controlling the pressure to about 5 XIO' Torr, the space 15
The evaporated material inside passes through the nozzle 7 to 5xto-
The deposited material is drawn out into an ultra-high vacuum of 9 Torr or less, and the deposited material forms clusters due to the supercooling phenomenon caused by adiabatic expansion. Further, the clusters are irradiated with electrons to form cluster ions, the cluster ions are accelerated by a voltage applied to an accelerating electrode, and the cluster ions are made to impinge on a substrate to perform vapor deposition, as in the conventional apparatus.

〔Effect of the invention〕

As explained above, since the present invention directly irradiates the deposition material with an electron beam, cluster ion beam deposition can be performed even on materials with high boiling points and high sublimation points. In addition, since the main body is separated into the evaporation chamber and the evaporation source chamber, exhaust can be performed using separate exhaust systems, and by performing evaporation in an ultra-high vacuum, the influence of residual gas on the growth of the deposited film is reduced. It has the effect that it can.

[Brief explanation of drawings]

FIG. 1 is a conceptual diagram of the structure of a cluster ion beam evaporation apparatus according to the present invention, and FIG. 2 is a conceptual diagram of the structure of a conventional cluster ion beam evaporation apparatus. DESCRIPTION OF SYMBOLS 1... Substrate holder, 2... Substrate, 3... Shutter, 4... Electrode for ion acceleration, 5... Electron emission filament for ionization, 6... Electron extraction grid for ionization, 7... ... Injection nozzle, 8 ... Crucible, 9
. . . Vapor deposition substance, lO . . . Electron emitting filament for heating the crucible, 11.
... Vapor deposition chamber, 15... Space section, 16... Evaporation source chamber Patent applicant NEC Corporation

Claims (1)

[Claims] (1) A vapor deposition chamber that accommodates a substrate for vapor deposition within the apparatus main body;
An evaporation source chamber is partitioned into an evaporation source chamber in which an electron beam heating device for evaporating the evaporation material is installed, and an injection nozzle for ejecting the evaporation material into the evaporation chamber is opened in a partition wall separating both chambers.
A cluster ion beam evaporation apparatus characterized in that a partition wall is provided with a pulp that also serves as a shutter for opening and closing the injection nozzle.