JPS60243959A - scanning electron microscope - Google Patents
scanning electron microscopeInfo
- Publication number
- JPS60243959A JPS60243959A JP59098723A JP9872384A JPS60243959A JP S60243959 A JPS60243959 A JP S60243959A JP 59098723 A JP59098723 A JP 59098723A JP 9872384 A JP9872384 A JP 9872384A JP S60243959 A JPS60243959 A JP S60243959A
- Authority
- JP
- Japan
- Prior art keywords
- objective lens
- scanning
- electron
- electron beam
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 claims description 32
- 230000005284 excitation Effects 0.000 claims description 11
- 239000000523 sample Substances 0.000 description 16
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は走査形電子顕微鏡に係り、特に電子ビームを探
針として、ＬＳＩの機能検査を行うのに好適な走査形電
子顕微鏡（ＥＢテスタ）に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a scanning electron microscope, and more particularly to a scanning electron microscope (EB tester) suitable for functionally testing LSI using an electron beam as a probe. .
電子ビームでＬＳＩ内の電位を測定する走査形電子顕微
鏡（ＥＢテスタと呼ばれる）では電位測定のために２次
電子のエネルギー分析器を設置する必要がある。一般に
は、最終的に電子ビームを細く絞る対物レンズと試料と
の間に２次電子エネルギー分析器を設置している。とこ
ろが、この構成では２次電子エネルギー分析器を設置す
るため、対物レンズと試料との間の距離が長くなる結果
、対物レンズの収差が大きくなり、細く、強力な電子ビ
ームを得ることは困難であった。In a scanning electron microscope (referred to as an EB tester) that measures the potential within an LSI using an electron beam, it is necessary to install a secondary electron energy analyzer to measure the potential. Generally, a secondary electron energy analyzer is installed between the objective lens that narrows the electron beam and the sample. However, in this configuration, a secondary electron energy analyzer is installed, which increases the distance between the objective lens and the sample, which increases the aberration of the objective lens, making it difficult to obtain a narrow and powerful electron beam. there were.
この問題の解決策の１つとして、特開昭５８−６８８５
３に示されるような２次電子分析器を対物レンズの上に
移し、対物レンズを短い焦点距離で動作させる考案がな
された。図１ （ａ）に特開昭５Ｂ −６８８５３に示
さ九た考案の走査形電子顕微鏡の光学系を示す（特開昭
５８−６８８５３ではコンデンサ・レンズを採用しない
ものを提示しているが、図１にはコンデンサレンズを用
いた例を示した）。As one solution to this problem, Japanese Patent Application Laid-Open No. 58-6885
An idea was devised to move a secondary electron analyzer as shown in Figure 3 above the objective lens and operate the objective lens at a short focal length. Figure 1 (a) shows the optical system of a scanning electron microscope devised in JP-A-58-68853 (JP-A-58-68853 proposes an optical system that does not use a condenser lens; 1 shows an example using a condenser lens).
電子銃１から放射された電子ビーム１０はまずコンデン
サレンズ２でＡ点に焦点を結ぶ。この電子ビーム１０は
絞り３で開口角を制限され、対物レンズ６で試料７上に
再び集められる。対物レンズ６の上には、２次電子分析
器５、電子ビームの走査コイル（静電偏向であってもよ
い）４が配置されている。この構成では、対物レンズ６
内に設置されるべき絞り３が、走査コイル４の上にある
。An electron beam 10 emitted from an electron gun 1 is first focused on a point A by a condenser lens 2. The aperture angle of this electron beam 10 is limited by an aperture 3, and the electron beam 10 is again focused onto a sample 7 by an objective lens 6. A secondary electron analyzer 5 and an electron beam scanning coil (which may be an electrostatic deflector) 4 are arranged above the objective lens 6. In this configuration, the objective lens 6
Above the scanning coil 4 is an aperture 3 to be placed within.
これは２次電子エネルギー分析器５が対物レンズ６上に
あるために生じたやむを得ない処理である。This is an unavoidable process that occurs because the secondary electron energy analyzer 5 is located above the objective lens 6.
この結果、対物レンズ６内であればり。ｍｍφでよいも
のが、Ｄ。×−の大きさになる（ａ、ａ’は図１ （ａ
）内に示されている）、、対物レンズ６が短焦点である
ため、Ｄｏが小さい上にさらに小さくなってしまう。例
えば、対物レンズ６と試料７との間の距離を５ｍとする
と最も細い電子ビームを得るり。は２０μｍである。特
開昭５８−６８８５３を実施したときの絞り３の開口は
７μｍになってしまう （ａ＝１５０ｎｎ、ａ’ ＝５
０ｎａとした）。As a result, the inside of the objective lens 6 becomes free. D is suitable for mmφ. ×- (a, a' are Fig. 1 (a
), Since the objective lens 6 has a short focus, Do is small and becomes even smaller. For example, if the distance between the objective lens 6 and the sample 7 is 5 m, the narrowest electron beam will be obtained. is 20 μm. When implementing JP-A-58-68853, the aperture of the diaphragm 3 becomes 7 μm (a=150nn, a'=5
0na).
このように小さい絞りを用いると、■絞りの製作、■軸
調整機構、■温度ドリフト、■絞りの汚れ（コンタミネ
イション）の点で問題を生じる。When such a small aperture is used, problems arise in terms of (1) manufacturing of the aperture, (2) axis adjustment mechanism, (2) temperature drift, and (2) contamination of the aperture.
本発明の目的は、前述の絞り位置の問題点を解決した新
規な走査形電子顕微鏡を提供することにある。An object of the present invention is to provide a novel scanning electron microscope that solves the above-mentioned problem of aperture position.
本発明の骨子を、第１図（ｂ）を用いて説明する。本発
明では、２次電子エネルギー分析器５と走査コイル４の
上下に第１対物レンズ８と第２対物レンズ９を設ける。The gist of the present invention will be explained using FIG. 1(b). In the present invention, a first objective lens 8 and a second objective lens 9 are provided above and below the secondary electron energy analyzer 5 and the scanning coil 4.
第１対物レンズ８では入射電子ビームを平行にする。第
２対物レンズ９では平行電子ビームを試料７上に集束す
る。すなわち、第１対物レンズ８と第２対物レンズ９で
一つの対物としての作用をする。このような構成にする
と絞り３の開口径はり。でよい。しかも、第１対物レン
ズ８と第２対物レンズ９との間の距離Ｃを任意にとるこ
とができ、２次電子エネルギー分析器５、走査コイル４
の設計が自由にできる利点がある。The first objective lens 8 makes the incident electron beam parallel. A second objective lens 9 focuses the parallel electron beam onto the sample 7. That is, the first objective lens 8 and the second objective lens 9 function as one objective. With this configuration, the aperture diameter of the diaphragm 3 will increase. That's fine. Moreover, the distance C between the first objective lens 8 and the second objective lens 9 can be set arbitrarily, and the secondary electron energy analyzer 5 and the scanning coil 4 can be set arbitrarily.
It has the advantage of being able to design freely.
本発明の一実施例を第２図に示す。同一・形状の磁路１
１と励磁コイル１２とからなる第１対物レンズ８および
第２対物レンズ９の間に上走査コイル１３、下走査コイ
ル１４．２次電子検出器２２ａ。An embodiment of the present invention is shown in FIG. Magnetic path 1 with the same shape
An upper scanning coil 13, a lower scanning coil 14, and a secondary electron detector 22a are located between a first objective lens 8 and a second objective lens 9, which are composed of a first objective lens 8 and an excitation coil 12.
２２ｂ、吸引グリッド１５．フィルタグリッド１６が設
置されている。吸引グリッド１５とフイるタグリッド１
６および２次電子検出器２２ａ。22b, suction grid 15. A filter grid 16 is installed. Suction grid 15 and fill tag grid 1
6 and a secondary electron detector 22a.
２２ｂで２次電子エネルギー分析器を構成する。22b constitutes a secondary electron energy analyzer.
試料７から１次電子ビーム１ｏの照射で発生した２次電
子２５は吸引グリッド１５で吸引され、第２対物レンズ
９の磁場内を通る。この２次電子２５のうちフィルタグ
リッド１６で作られるエネルギー障壁をこえるエネルギ
ーをもつ２次電子のみが２次電子検出器２２ａ、２２ｂ
で検出される。Secondary electrons 25 generated from the sample 7 by irradiation with the primary electron beam 1o are attracted by the attraction grid 15 and pass through the magnetic field of the second objective lens 9. Of these secondary electrons 25, only secondary electrons with energy exceeding the energy barrier created by the filter grid 16 are detected by secondary electron detectors 22a and 22b.
Detected in
吸引グリッド１５とフィルタグリッド１６に与える電位
は例えば１ｏｏｖと一５ｖである。フィルタグリッド１
６をこの例のように負電圧にしておくと試料７の電位の
変化が２次電子検出器２２ａ。The potentials applied to the suction grid 15 and the filter grid 16 are, for example, 10V and -5V. filter grid 1
6 is set to a negative voltage as in this example, a change in the potential of the sample 7 is detected by the secondary electron detector 22a.
２２ｂの出力変化としてあられれる。電位変化を強調し
て表示するのではなく、試料７の形状のみを表示する場
合には、フィルタグリッド１６を正電位、例えば１００
ｖにすればよし）。どちらの場合も、フィルタグリッド
１６を通過した２次電子はシンチレータ１７ａ、１７ｂ
に印加されたポスト高電圧（〜１０ＫＶ） ２１ ａ、
２１ ｂで吸引、加速され、シンチレータ１７ａ、１
７ｂを衝撃し光を発する。この光はライトガイド１８ａ
、１８ｂを通り、ホトマル１９ａ、１９ｂで電気信号に
変換、増幅され、さらにヘッドアンプ２０ａ、２０ｂで
増幅される。増幅された信号は走査形電子顕微鏡を構成
するディスプレー装置（第２図では省略）の輝度信号あ
るいは電位測定の信号となる。This appears as a change in the output of 22b. If you want to display only the shape of the sample 7 instead of emphasizing potential changes, set the filter grid 16 to a positive potential, for example 100
You can change it to v). In either case, the secondary electrons that have passed through the filter grid 16 are sent to scintillators 17a and 17b.
Post high voltage (~10KV) applied to 21a,
21b, the scintillators 17a, 1
Impacts 7b and emits light. This light is the light guide 18a
, 18b, and is converted into an electrical signal and amplified by photomultipliers 19a and 19b, and further amplified by head amplifiers 20a and 20b. The amplified signal becomes a luminance signal of a display device (not shown in FIG. 2) constituting the scanning electron microscope or a signal for potential measurement.
主走査コイル１３と不走査コイル１４とで電子ビーｌ、
１０を試料７上に走査する。主走査コイル１３と下走査
コイル１４は逆方向に偏向するように作られ、その偏向
支点が第２対物レンズ９のレンズ中心と一致するように
両者の偏向量が調整されている（第３図ａ参照）。Electronic beer l by main scanning coil 13 and non-scanning coil 14,
10 onto the sample 7. The main scanning coil 13 and the lower scanning coil 14 are made to deflect in opposite directions, and the amount of deflection of both is adjusted so that the deflection fulcrum coincides with the lens center of the second objective lens 9 (see Fig. 3). (see a).
絞り３は第２対物レンズ８の中心に設けられている。こ
の位置で電子ビームは最も太くなってしするため、絞り
３の開口径は従来（特開昭５８−６８８５３） のよう
に小さいものではない６電子ビームは絞り３で開口角を
制限され、第１対物レンズ８で平行にされ、第２対物レ
ンズ９で試料７に集束される。第１対物レンズ８の励磁
コイル１１と第２対物レンズ９の励磁コイル１１に流す
電流は一定の関係に保たれ、加速電圧が変化しても両者
の光学条件が変化しないようになっている。The aperture 3 is provided at the center of the second objective lens 8. Since the electron beam becomes the thickest at this position, the aperture diameter of the aperture 3 is not as small as in the conventional case (Japanese Patent Application Laid-Open No. 58-68853).6 The aperture angle of the electron beam is limited by the aperture 3, and The first objective lens 8 makes the light parallel, and the second objective lens 9 focuses the light onto the sample 7. The currents flowing through the excitation coil 11 of the first objective lens 8 and the excitation coil 11 of the second objective lens 9 are maintained in a constant relationship, so that the optical conditions of both do not change even if the accelerating voltage changes.
第１対物レンズ８の物面Ａの位置に主偏向板２３が設置
されている。電子ビームをパルス化するストロボ観察に
用いるもので、一般には非常ｔ″−−立上速い矩形波電
圧を与える。矩形波電圧が接地電位をよぎるときにのみ
電子ビームが絞り３を通過するので、電子ビームはＩｎ
ｓ前後にパルス化される。副偏向板２４は、主偏向板２
３とは直交（図面では同一方向）している。この副別向
板２４には主偏向板２３に与えた矩形波とは９０゜位相
の異なった矩形波を与え、矩形波の１周期にパルス電子
ビームが１つだけになるようにしている。A main deflection plate 23 is installed at the object plane A of the first objective lens 8 . It is used for strobe observation that pulses the electron beam, and generally provides a rectangular wave voltage that rises very quickly at t''.The electron beam passes through the aperture 3 only when the rectangular wave voltage crosses the ground potential. The electron beam is In
It is pulsed around s. The sub deflection plate 24 is the main deflection plate 2
3 (in the same direction in the drawing). A rectangular wave having a phase difference of 90° from the rectangular wave applied to the main deflection plate 23 is applied to the sub-direction plate 24 so that only one pulsed electron beam is generated in one period of the rectangular wave.
以上の説明は主に電子ビームを細く絞ることを主目的と
した対物レンズの短焦点動作であった。The above explanation was mainly about the short focus operation of the objective lens, whose main purpose is to narrow down the electron beam.
このように短い焦点距離で対物レンズを動作させると電
子ビームを試料７上で広い範囲に走査させることが困難
になる。例えば、第２対物レンズ９と試料７との距離が
５側であれば、試料７上の走査範囲は１ｍ角が限界とな
る。ところが、ＬＳＩのチップは５１ｍ角〜１０１ｍ角
もあるため、全体を一回の走査で観察することはできな
い。これが短焦点動作（特開昭５８−６８８５３ ）の
大きな欠点となっている。If the objective lens is operated at such a short focal length, it becomes difficult to scan the electron beam over a wide range on the sample 7. For example, if the distance between the second objective lens 9 and the sample 7 is on the 5 side, the scanning range on the sample 7 is limited to 1 m square. However, since an LSI chip is 51 m square to 101 m square, it is not possible to observe the entire chip in one scan. This is a major drawback of short focus operation (Japanese Patent Laid-Open No. 58-68853).
本発明では、上記の重大な欠点をも克服することができ
る。本発明の構成では、（１）第２対物レンズ９をＯＦ
Ｆ、（２）第１対物レンズ８のみで試料７に焦点させる
、（３）走査コイルを上あるいは下のみとする、ことで
走査範囲を５〜２０倍にも拡大することができる。第１
対物レンズ８のみによる焦点では電子ビームは太くなる
が広範囲走査なので像の解像度を落す等の問題はない。With the present invention, the above-mentioned serious drawbacks can also be overcome. In the configuration of the present invention, (1) the second objective lens 9 is OF
F. By (2) focusing on the sample 7 using only the first objective lens 8 and (3) using only the upper or lower scanning coil, the scanning range can be expanded by 5 to 20 times. 1st
If the electron beam is focused only by the objective lens 8, it will become thicker, but since it scans over a wide range, there will be no problems such as a drop in image resolution.
以下、第１対物レンズ８、第２対物レンズ９、走査コイ
ル１３．１４の動作と組合せについて第３図を用いて詳
述する。The operations and combinations of the first objective lens 8, second objective lens 9, and scanning coils 13, 14 will be described in detail below with reference to FIG.
第１対物レンズ８と第２対物レンズ９は全く同一の構造
のものを用いた場合で説明する。まず第３図ａを用いて
短焦点動作を示す第１対物レンズ８と第２対物レンズ９
は同一の駆動電源２６ａと２６ｂで動かす。この駆動電
源２６ａ、２６ｂは駆動電圧を入力するとこれに応じた
電流が流れるように作られている。駆動電圧発生回路２
７の出力は２つに分岐され、一方は比例係数回路２８と
スイッチ２９ａを通って第１対物レンズ８の駆動電源２
６ａに入力され、他方はスイッチ２９ｂを通ってそのま
ま第２対物レンズ９用の駆動電源２６ｂに入力される。The description will be made assuming that the first objective lens 8 and the second objective lens 9 have exactly the same structure. First, the first objective lens 8 and the second objective lens 9 showing short focus operation using FIG. 3a.
are driven by the same drive power supplies 26a and 26b. These drive power supplies 26a and 26b are made so that when a drive voltage is input, a current flows in accordance with the drive voltage. Drive voltage generation circuit 2
The output of 7 is branched into two parts, one of which passes through a proportional coefficient circuit 28 and a switch 29a to the drive power supply 2 of the first objective lens 8.
6a, and the other one passes through the switch 29b and is inputted directly to the drive power source 26b for the second objective lens 9.
比例係数回路２８の係数は（ｂ／ａ） ２に作られてい
る。上走査コイル１３の巻数は下走査コイル１４０巻数
の半分とし、偏向方向を逆とし、同一の電流を走査電源
３１で流す（走査コイルの配置は第３図に示されている
）。The coefficient of the proportional coefficient circuit 28 is set to (b/a)2. The number of turns of the upper scanning coil 13 is half the number of turns of the lower scanning coil 140, the direction of deflection is reversed, and the same current is applied by the scanning power supply 31 (the arrangement of the scanning coils is shown in FIG. 3).
このときの電子ビームの軌道を第３図ａに示した。The trajectory of the electron beam at this time is shown in Figure 3a.
この方式の最大走査範囲は約１何角である。The maximum scanning range of this method is about 1 square.
広い範囲を走査させるにはスイッチ２９ａ。Switch 29a to scan a wide range.
２９ｂ、２９ｃを動作させる（第３図ｂ）。スイッチ２
９ａの動作で、第１対物レンズ８の駆動電圧径路に補正
係数回路３０が入る。補正係数回路るので、第１対物レ
ンズ８は電子ビームを試料７に焦点を結ぶようになる。29b and 29c are operated (Fig. 3b). switch 2
By the operation 9a, the correction coefficient circuit 30 enters the drive voltage path of the first objective lens 8. Since the correction coefficient circuit is provided, the first objective lens 8 focuses the electron beam on the sample 7.
一方、第２対物レンズ９はスイッチ２９ｂでＯＦＦとな
る。また下走査コイル１４がスイッチ２９ｃで短絡され
るので、電子ビーム走査範囲がｂ＝＝５ｎ＋ｍ、ｄ＋＝
４０ｉｎとすれば、拡大比は１７倍にもなる。On the other hand, the second objective lens 9 is turned off by the switch 29b. Further, since the lower scanning coil 14 is short-circuited by the switch 29c, the electron beam scanning range is b==5n+m, d+=
If it is 40 inches, the magnification ratio will be 17 times.
以上詳述した本実施例で得られる性能例を第１表に示す
。電子源は単結晶タングステンを用いた電界放射形とし
、加速電圧はＩＫＶとした。Table 1 shows examples of performance obtained in this embodiment described in detail above. The electron source was a field emission type using single crystal tungsten, and the acceleration voltage was IKV.
第１表
尚、本発明では、同一の構造の第１対物レンズと第２対
物レンズを用いたが構造が異なっても、焦点の比を一定
にしておけばよいことは言うまでもない。また本実施例
では、第１対物レンズと第２対物レンズの励磁電流の比
を駆動電圧比で行ったが、第１対物レンズの励磁コイル
を２系統とし、一系統の励磁コイルに第２対物レンズと
同一励磁電流を流して両者の焦点距離の比を所定の関係
に保つようにしてもよい。Table 1 Note that in the present invention, the first objective lens and the second objective lens of the same structure are used, but it goes without saying that even if the structures are different, it is sufficient to keep the focal ratio constant. In addition, in this embodiment, the ratio of the excitation currents of the first objective lens and the second objective lens was determined by the drive voltage ratio, but the excitation coil of the first objective lens is two systems, and the excitation coil of one system is connected to the excitation current of the second objective lens. The same excitation current as that of the lens may be applied to maintain the ratio of the focal lengths of the two in a predetermined relationship.
以上詳述したごとく、本発明によれば、（１）２次電子
分析器を対物レンズの上方に設置して電子ビームの開口
角を制限する絞りの開口径を大の大きさでしかも適正な
位置に置くことがでる、（２）２次電子エネルギー分析
器、走査コルの設置の位置や大きさに制限がない、（３
）い電子ビームを得ることと、広範囲走査とが両できる
等の利点がある。この結果、電子顕微鏡工事への応用が
促進される。As detailed above, according to the present invention, (1) the secondary electron analyzer is installed above the objective lens, and the aperture diameter of the diaphragm that limits the aperture angle of the electron beam is made large and appropriate; (2) There are no restrictions on the location or size of the secondary electron energy analyzer or scanning col, (3)
) It has the advantage of being able to both obtain a high electron beam and scan a wide range. As a result, application to electron microscope construction will be promoted.
第１図ａは従来装置、同図すは本発明のそれれ原理的構
成を示す電子顕微鏡の模式図、第２は本発明の一実施例
になる電子顕微鏡の縦断面第３図ａ、ｂは本発明の一実
施例になる装置の施態様を示すブロック図である。
代理人 弁理士 高橋明
も 第 １ 口
過
き
イ
細
立
の
ぞ
図
図、
実
←Fig. 1a is a schematic diagram of an electron microscope showing a conventional device, the same figure is a schematic diagram of an electron microscope showing the basic configuration of the present invention, and Fig. 2 is a longitudinal cross-sectional view of an electron microscope according to an embodiment of the present invention.Figs. 3a and b 1 is a block diagram showing an embodiment of an apparatus according to an embodiment of the present invention. FIG. The agent and patent attorney Akira Takahashi is also the 1st person who has spoken a lot.
Claims (1)
子を集束するレンズ系と、集束電子を試料上に走査する
走査電源と、２次電子検出器を含む像表示系とからなる
走査形電子顕微鏡において、電子ビームを集束する対物
レンズが連動して動作する第１対物レンズと第１対物レ
ンズとで構成され、かつ第１対物レンズと第２対物レン
ズの間に２次電子検出器と走査コイルあるいは走査偏向
板を設置したことを特徴とする走査形電子顕微鏡。 ２、試料に近接して配置された第２対物レンズの上方で
、かつ２次電子検出器の下方に２次電子のエネルギー分
析器を設けたことを特徴とする特許請求の範囲第１項記
載の走査形電子顕微鏡。 ３、第１対物レンズで電子ビームを平行にし、第２対物
レンズで該平行電子ビームを試料上に請求の範囲第１項
および第２項記載の走査形電子顕微鏡。 ４、第１対物レンズのレンズ中心に電子ビームの開口角
を制限する絞りを設けたことを特徴とする特許請求の範
囲第１乃至第３項記載の走査形電子顕微鏡。 ５、第２対物レンズの励磁電流をしゃ断すると同時に、
第１対物レンズで試料に電子ビーム焦点を結ぶように第
１対物レンズの励磁電流を一定の比で増加させることを
特徴とする特許請求の範囲第１乃至第４項記載の走査形
電子顕微鏡。 ６６第２対物レンズの励磁電流のしゃ断と同時に走査コ
イルに流す電流あるいは複数個で構成される走査コイル
あるいは走査偏向器の組合せを変えることを特徴とする
特許請求の範囲第５項記載の走査形電子顕微鏡。 ７、第１対物レンズの物面位置に電子ビームをパルス化
する静電形の偏向器を設けたことを特徴とする特許請求
の範囲第１項、第２項記載の走大ｘＫ／、＃）マーｗ４
ＩｖｌＩ越[Claims] 1. An image including an electron source that emits electrons, a lens system that focuses the electrons emitted from the electron source, a scanning power source that scans the focused electrons onto a sample, and a secondary electron detector. In a scanning electron microscope consisting of a display system, an objective lens for focusing an electron beam is composed of a first objective lens and a first objective lens that operate in conjunction with each other, and between the first objective lens and the second objective lens. A scanning electron microscope characterized in that a secondary electron detector and a scanning coil or a scanning deflection plate are installed in the main body. 2. Claim 1, characterized in that a secondary electron energy analyzer is provided above the second objective lens disposed close to the sample and below the secondary electron detector. scanning electron microscope. 3. A scanning electron microscope according to claims 1 and 2, wherein the first objective lens makes the electron beam parallel, and the second objective lens directs the parallel electron beam onto the sample. 4. A scanning electron microscope according to any one of claims 1 to 3, characterized in that a diaphragm for limiting the aperture angle of the electron beam is provided at the center of the first objective lens. 5. At the same time as cutting off the excitation current of the second objective lens,
5. The scanning electron microscope according to claim 1, wherein the excitation current of the first objective lens is increased at a constant ratio so that the first objective lens focuses the electron beam on the sample. 66 The scanning type according to claim 5, characterized in that the current flowing through the scanning coil or the combination of a plurality of scanning coils or scanning deflectors is changed at the same time as the excitation current of the second objective lens is cut off. electronic microscope. 7. An electrostatic deflector for pulsing the electron beam is provided at the object plane position of the first objective lens. ) Mar w4
IvlI
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59098723A JP2748956B2 (en) | 1984-05-18 | 1984-05-18 | Scanning electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59098723A JP2748956B2 (en) | 1984-05-18 | 1984-05-18 | Scanning electron microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60243959A true JPS60243959A (en) | 1985-12-03 |
| JP2748956B2 JP2748956B2 (en) | 1998-05-13 |
Family
ID=14227435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59098723A Expired - Lifetime JP2748956B2 (en) | 1984-05-18 | 1984-05-18 | Scanning electron microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2748956B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5872358A (en) * | 1995-10-19 | 1999-02-16 | Hitachi, Ltd. | Scanning electron microscope |
| WO2017018432A1 (en) * | 2015-07-29 | 2017-02-02 | 株式会社 日立ハイテクノロジーズ | Charged particle beam device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4839164A (en) * | 1971-09-21 | 1973-06-08 | ||
| JPS5291361A (en) * | 1976-01-27 | 1977-08-01 | Jeol Ltd | Scanning electron microscope |
| JPS5868853A (en) * | 1981-09-30 | 1983-04-23 | シ−メンス・アクチエンゲゼルシヤフト | Electronic optical device for high resolution electron beam measuring technique |
-
1984
- 1984-05-18 JP JP59098723A patent/JP2748956B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4839164A (en) * | 1971-09-21 | 1973-06-08 | ||
| JPS5291361A (en) * | 1976-01-27 | 1977-08-01 | Jeol Ltd | Scanning electron microscope |
| JPS5868853A (en) * | 1981-09-30 | 1983-04-23 | シ−メンス・アクチエンゲゼルシヤフト | Electronic optical device for high resolution electron beam measuring technique |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5872358A (en) * | 1995-10-19 | 1999-02-16 | Hitachi, Ltd. | Scanning electron microscope |
| US5900629A (en) * | 1995-10-19 | 1999-05-04 | Hitachi, Ltd. | Scanning electron microscope |
| US6084238A (en) * | 1995-10-19 | 2000-07-04 | Hitachi, Ltd. | Scanning electron microscope |
| WO2017018432A1 (en) * | 2015-07-29 | 2017-02-02 | 株式会社 日立ハイテクノロジーズ | Charged particle beam device |
| US10304654B2 (en) | 2015-07-29 | 2019-05-28 | Hitachi High-Technologies Corporation | Charged particle beam device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2748956B2 (en) | 1998-05-13 |
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