JPS60238478A - Target for sputtering device - Google Patents

Abstract

PURPOSE:To enhance the sputtering efficiency and to increase the film-forming rate by providing many inclined parts on the surface of a target in the sputtering device, and irradiating sputtering gas ions on the target surface at a specified angle. CONSTITUTION:Sputtering gas ions formed by glow discharge are irradiated on a target 1 of Mo, SiO2, etc. to discharge atoms of the target substance, and a thin film of Mo or SiO2 is formed on the surface of an objective substrate 2. In this case, many annular inclined parts 3 are formed on the surface of the target 1, and sputtering gas ions are irradiated at an angle of inclination of about 40 deg.. Accordingly, the sputtering efficiency at the target 1 is improved, and the amt. of atoms of the target substance proceeding to the substrate 2 is increased. The thin film of the target substance is formed on the substrate 2 in a short time with small consumption of energy in this way.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention involves colliding super gas ions formed by glow discharge in the space between an anode and a cathode with a target on the surface of the cathode, and causing sputtering to occur. A major feature that the target substance atoms pop out from the target surface, and the spatta device target is related to the target for spatta device, which is a target for spatta device that can be filmed on the base plate. However, the RF sputtering method and the magnetron sputtering method became the mainstream methods, but the magnetron method, which combines an electric field and a magnetic field to increase the plasma density, is widely used as a high-speed sputtering device with a high sputtering rate. has been done. Targets used for sputtering can be made of various materials, but it is known that insulating targets in particular have a low film formation rate and require a long time to form a film. Therefore, if the power is increased to increase the sputtering rate, there is a risk that the target itself will break. Therefore, using magnetron sputtering, e.g.
When sputtering an i02 target, the sputtering rate is limited to about 800 A/min.

On the other hand, the sputtering efficiency is K as shown in Figure 3 of the attached drawings.
, it is observed that it is higher when the sputtering gas ions (eg Ar 2 , Hl 2 , etc.) are incident on the target obliquely than when they are incident perpendicularly on the target. Especially 5i02,
This tendency is remarkable in MO, and the sputtering efficiency increases by more than 5 times when the ion incidence angle to the target surface (i.e., the angle between the direction perpendicular to the target surface and the direction of the incident ions) is about 40'. It has become. However, for example, 40
Even if a target structure is used as shown in FIG. 4 so that the ion incidence angle is at the angle @, it is not possible to simply obtain a film formation rate five times higher. This is because, as shown in Figure 4, adjacent convex portions become obstacles to each other's sputtered particles, and only a portion of the atoms sputtered from the target are effectively utilized. . In addition, when the height of the convex part becomes high enough to be compared to the darks of a sl-zetter, electric lines of force are generated perpendicular to the inclined surface of the target, and sputtering gas ions are accelerated along these lines, resulting in The rate is not high because it is incident perpendicularly to the inclined surface of the target.

[Problem that the invention seeks to solve]

Therefore, in the present invention, in consideration of the above-mentioned points, the surface shape of the target is defined so that atoms of the target material protrude more and more effectively onto the substrate on which a film is to be formed, resulting in a high film formation rate. The purpose is to

[Means for solving problems]

In order to achieve the above object, the present invention provides a target for a sputtering apparatus of the above type, in which sputtering gas ions are incident on the target at a predetermined angle, and are directed toward a substrate to be deposited with a large number of effective targets. The target's surface is constructed with many sloped parts so that material atoms can fly out.

[For production]

The target for a sputtering apparatus of the present invention configured as described above has a higher sputtering efficiency at the same power than a target with a conventional structure, and can effectively eject more target material atoms toward the substrate. As a result, the film forming time can be significantly shortened, and energy can be saved, that is, running costs can be reduced.

〔Example〕

Embodiments of the present invention will be described below with reference to Figure 1' of the accompanying drawings.

This will be explained with reference to FIG.

@1 Figure schematically shows an embodiment of the present invention, and 1 i-
, j targets, the substrate 2 is shown opposite the target 1. As shown in the figure, the surface of the target 1 is provided with a large number of annular inclined parts 3, each inclined part 3 is inclined towards the center, and the inclination angle of each inclined part B with respect to the horizontal plane is 30 degrees or less, Preferably, it can be set to about 20". As can be seen from FIG. It is dimensioned so that it is not comparable in part to the darks of .Each slope 6
By configuring the target material to be inclined toward the center, the target material atoms ejected by the incident sputtering gas ions do not wastefully eject to the outer periphery, but effectively eject toward the substrate 2 on which the film is to be formed. Become. Of course, depending on the application, the direction of the inclined surface is not necessarily centered.

Note that the number and shape of the inclined portions can be arbitrarily and appropriately designed as long as the above-mentioned requirements are met.

FIG. 2 shows a modification of the embodiment shown in FIG. 1, which differs in the shape of the surface connecting the adjacent inclined parts 6, 6. That is, in FIG. 1 it is vertical, but in FIG. 2 it is inclined.

〔Effect of the invention〕

As explained above, according to the present invention, since the sputtering gas ions are configured to be incident obliquely, the sputtering efficiency is increased and the number of target material atoms on the substrate is increased, thereby significantly increasing the film formation rate. can be increased. As a result, reductions in film formation time, energy savings, running costs, equipment costs, etc. can be achieved.

[Brief explanation of drawings]

Figure 1.2 is a partial cross-sectional view of an embodiment of the target according to the present invention, Figure 6 is a graph showing the dependence of sputtering efficiency on the ion incidence angle when the incidence angle O'' is 1, and Figure 4 is It is an explanatory diagram. In the figure, 1: target, 2: substrate, 6: inclined part. Figure 1 Figure 2 Figure 3 Ion incident angle

Claims (1)

[Claims] Sputtering gas ions formed by glow discharge in the space between the anode and cathode collide with the target on the cathode surface, causing atoms of the target material to fly out from the target surface by sputtering, thereby forming a film on the substrate. In the target for sputtering equipment,
1. A target for a sputtering apparatus, characterized in that the surface of the target is configured with a number of inclined parts so that sputtering gas ions are incident on the target at a predetermined angle.