JPS60231330A - Semiconductor material processing apparatus - Google Patents
Semiconductor material processing apparatusInfo
- Publication number
- JPS60231330A JPS60231330A JP8715284A JP8715284A JPS60231330A JP S60231330 A JPS60231330 A JP S60231330A JP 8715284 A JP8715284 A JP 8715284A JP 8715284 A JP8715284 A JP 8715284A JP S60231330 A JPS60231330 A JP S60231330A
- Authority
- JP
- Japan
- Prior art keywords
- tank
- semiconductor material
- processing
- pores
- processing liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 50
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 239000007788 liquid Substances 0.000 claims abstract description 28
- 239000011148 porous material Substances 0.000 claims description 28
- 238000007747 plating Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はシリコンウェハやガラスフォトマスク等の半導
体材料に回路パターンを形成するプロセスに含まれる現
像またはエンチングもしくはめつき等の処理を施こすた
めの装置の改良に関する。[Detailed Description of the Invention] (Industrial Application Field) The present invention is applicable to processing such as development, etching, or plating included in the process of forming circuit patterns on semiconductor materials such as silicon wafers and glass photomasks. This invention relates to improvements in equipment.
（従来の技術）
半導体回路の製作には、例えばシリコンからなる半導体
ウニ・・−に金属薄膜または酸化膜が施こされ、その表
面にはＮ型またはｐ型の拡散材料を選択的に浸透させろ
ため、ウニ／・−の表面の金属薄膜あるいは酸化膜のエ
ツチングが行なわれろ。(Prior art) In the production of semiconductor circuits, a thin metal film or an oxide film is applied to a semiconductor substrate made of silicon, for example, and an N-type or p-type diffusion material is selectively infiltrated into the surface of the thin metal film or oxide film. Therefore, etching of the metal thin film or oxide film on the surface of the sea urchin/.-- should be performed.
そのため感光液をウェハーの表面の所定部分に薄膜状に
塗布し、それを焼付は且つ現像処理を行なって、半導体
配線回路となるパターンを形成している。捷だ、半導体
装置を作るための原画としてのカラスフォトマスクにつ
いても金属薄膜捷たは金属酸化膜のエツチングを行ない
、さらにめっきを施こすことによって半導体装置として
の特定のパターンを形成している。For this purpose, a photosensitive liquid is applied to a predetermined portion of the surface of a wafer in the form of a thin film, which is then baked and developed to form a pattern that will become a semiconductor wiring circuit. For the crow photomask, which is the original image for making semiconductor devices, the metal thin film or metal oxide film is etched and then plated to form a specific pattern for the semiconductor device.
例えば、このようなエツチングをディッピング方式で行
なえば、ウェハー裏面のシリコンや酸化膜をも除去し、
歩留の低下を生じろ原因になるので裏面をフォトレジス
トで保護し、エツチング後にそれを除去するため余分な
工程を要し、それを改良するものとしてカップ状の槽の
上にウニ／・−を支持すると共に槽内より吹上げる処理
液によってエツチングを行りう装置が開発されるに至っ
た。For example, if this type of etching is performed using a dipping method, silicon and oxide films on the back side of the wafer will also be removed.
To avoid this, the back side is protected with photoresist and an extra step is required to remove it after etching. A device has been developed that supports the etching process and performs etching using a processing liquid blown up from inside the tank.
（発明が解決しようとする問題点）
しかし、槽内から処理液を吹き上げる方式においても、
回路パターンを形成するフォトレジストとウェハーの間
の角または隅に空気がトラップさし且つウェハーの中央
と周囲ではウェハーに対する処理液の圧力差や流速差が
あり、そのため処理にむらを生じ、均一な処理ができな
い欠点があった。また、めっき処理においても同じよう
な欠点があった。(Problems to be solved by the invention) However, even in the method of blowing up the processing liquid from inside the tank,
Air is trapped in the corners or corners between the photoresist that forms the circuit pattern and the wafer, and there is a difference in pressure and flow rate of the processing liquid with respect to the wafer between the center and the periphery of the wafer, resulting in uneven processing and unevenness. There was a drawback that it could not be processed. Similar drawbacks also existed in plating.
本発明の目的は処理にむらがｈ〈且つ均一に処理するこ
とが出来る半導体材料の処理装置を提供することである
。An object of the present invention is to provide a semiconductor material processing apparatus that can process semiconductor materials uniformly and without unevenness.
本発明による処理装置の特徴はカップ状の槽の頂部に設
けられた多数の細孔を通して半導体材料の下向きの表面
に対し処理液を噴射するようにしたことである。A feature of the processing apparatus according to the present invention is that the processing liquid is injected onto the downward surface of the semiconductor material through a number of pores provided at the top of the cup-shaped tank.
（実施例）
次に図面を参照のもとに本発明の実施例に関し説明する
。第１図は現像またはエツチング用の装置に本発明が適
用された例を示すものであって、この処理装置は底部に
処理液導入用の通路（２）があるカップ状の槽（１）と
、その上に備えられたチャック（３）を含み、槽（１）
の周囲にはオーバーフローした５−
処理液を受けるとよ（４）があり、とよ（４）から溜め
（５）およびポンプ（６）を経て再び通路（２）に処理
液が循環される。(Example) Next, an example of the present invention will be described with reference to the drawings. FIG. 1 shows an example in which the present invention is applied to a developing or etching device. , a chuck (3) provided thereon;
There is a well (4) around the pipe which receives the overflowing processing liquid, and the processing liquid is circulated from the pipe (4) through the reservoir (5) and the pump (6) to the passage (2) again.
チャック（３）は軸受により支持台（７）に回転自在に
支持され、伝動ベルト（８）によりモータ（図示せず）
に連結される。（９）は軸線に沿った通路を介してチャ
ックの下面を真空源（図示せず）Ｋ連通する管であって
、チャックの下面でシリコンウェハーなどの処理すべき
半導体材料を吸引するようになっている。The chuck (3) is rotatably supported on a support base (7) by a bearing, and is connected to a motor (not shown) by a transmission belt (8).
connected to. (9) is a tube that communicates the bottom surface of the chuck with a vacuum source (not shown) via a passage along the axis, and is designed to suck semiconductor materials to be processed, such as silicon wafers, from the bottom surface of the chuck. ing.
本発明の特徴は槽（１）の頂部に多数の細孔を設けて、
それらの細孔を通して処理液を上方に噴射するようにし
たことであり、そのため第１図の実施例では多数の細孔
（１０）が形成された板状の部材（ｌＩｌが槽（１）の
頂部に設置されている。これらの細孔（１０）は第２図
に示すように均一に分布して形成されるのが好ましく、
各細孔（１０）の直径は２０μ〜１ｍｍ程度であるのが
好ましい。部材的）の材質はテフロン、ポリプロピレン
または塩化ビニールなどの樹脂であるのが好ましいや
− ゝ′ 。The feature of the present invention is that a large number of pores are provided at the top of the tank (1),
The processing liquid is injected upward through these pores, and therefore, in the embodiment shown in FIG. These pores (10) are preferably formed in a uniform distribution as shown in FIG.
The diameter of each pore (10) is preferably about 20 μm to 1 mm. It is preferable that the material of the material is a resin such as Teflon, polypropylene, or vinyl chloride.
− ゝ′.
６−
また、多数の細孔（１０）は第６図に示すように、先端
が同じ高さに揃えられた多数のノズル（１２）によって
形成してもよく、その場合、槽（１）の上部に、ノズル
の内径に等しい多数の孔が設けられた支持板（１３）を
固定し、支持板の孔に合わせてノズル（１２）が直立に
設置される。ノズルは樹脂捷たガラスで構成されるのが
好ましく、ガラスの場合にはレーザ光線によって細孔を
容易に形成することができろ。6- Also, as shown in Figure 6, the large number of pores (10) may be formed by a large number of nozzles (12) whose tips are aligned at the same height, in which case A support plate (13) provided with a number of holes equal to the inner diameter of the nozzle is fixed to the upper part, and the nozzle (12) is installed upright in alignment with the holes of the support plate. Preferably, the nozzle is made of glass made of resin, and in the case of glass, the pores can be easily formed using a laser beam.
これらのノズル（１２）の先端捷たは細孔（１０）が形
成された部材（１１）の上面は槽（１）の縁より０．５
〜ろＯｍｍ程度高くするのが好ましく、それにより細孔
（１０）の−に端を処理すべき半導体材料の面に近づけ
ろことができろ。また第４図に示すように、細孔（１０
）の」二端部の内周（１０ａ）は末広状に拡大されてい
るのが好ましい。なお、槽（１）の縁は必ずしも円形で
ある必要はなく、場合によっては正方形であってもよい
。The upper surface of the member (11) in which the tips of these nozzles (12) or the pores (10) are formed is 0.5 mm from the edge of the tank (1).
It is preferable to increase the height by about 0 mm, so that the edge of the pore (10) can be brought close to the surface of the semiconductor material to be processed. In addition, as shown in Figure 4, pores (10
It is preferable that the inner periphery (10a) of the two end portions of ) is widened in a diverging shape. Note that the edge of the tank (1) does not necessarily have to be circular, and may be square depending on the case.
本発明はまた、所謂バンプめりきといわれろ半導体材料
のめつき処理にも同様に適用することができ第５図はそ
のための装置を示す。この場合、めっき液が上方に導び
かれろ通路（２）が下部に設けられた槽（１）が用いら
れ、槽（１）内から吹き上げる処理液によって半導体材
料（Ｅｌ）の下向きの表面がめつき処理を受ける点では
前記の場合と同様であるが、めっき処理では槽（１）の
頂部の適当な位置に設置された支持部（＋４１の段部な
どに半導体材料が水平に置かれ、その上から押え部材０
９で押えるようになっている。この押え部材にはガス通
路（１６）があり、そこを通して半導体材料の上面の周
囲にガスを吹き出し、めっき液のまわり込みを防いでい
る。さらにセットされた半導体材料に接する陰極０′７
）と、槽（１）内の適当な位置に設けられる陽極（１８
）を含んでいる。The present invention can also be similarly applied to a so-called bump-plating process for semiconductor materials, and FIG. 5 shows an apparatus for this purpose. In this case, a tank (1) in which a plating solution is guided upward and a passageway (2) is provided at the bottom is used, and the downward surface of the semiconductor material (El) is exposed to the downward surface of the semiconductor material (El) by the processing solution blown up from inside the tank (1). The plating process is the same as the previous case, but in the plating process, the semiconductor material is placed horizontally on a support part (such as a step at +41) installed at an appropriate position on the top of the tank (1). Presser member 0 from above
You can press it with 9. This holding member has a gas passage (16) through which gas is blown around the upper surface of the semiconductor material to prevent the plating solution from getting around. Furthermore, the cathode 0'7 in contact with the set semiconductor material
) and an anode (18) provided at an appropriate position in the tank (1).
).
そしてめっき用の装置の場合にも、槽（１＋の頂部に設
けられた多数の細孔（１０）を通してめっき液は半導体
材料の表面に対し噴射されるように構成され、それらの
細孔（１０）は第６図に示すように多数のノズルｆ＋２
１で構成されてもよく、または板状の部材（１１］に形
成された多数の細孔でもよい。もしノズル（１２１で構
成する場合、各ノズルを金属管で作り、それらを陽極に
接続してもよい。また細孔（１ｏ）が樹脂などの不導体
で構成されれば第５図に示すように、首孔に導線（１９
）を通し、それを陽極に接続してもよい。In the case of a plating device, the plating solution is injected onto the surface of the semiconductor material through a large number of pores (10) provided at the top of the tank (1+), ) is a large number of nozzles f+2 as shown in FIG.
1 or a large number of pores formed in a plate-like member (11).If it is composed of nozzles (121), each nozzle is made of a metal tube and connected to the anode. Also, if the pore (1o) is made of a nonconductor such as resin, a conducting wire (19) may be inserted into the neck hole as shown in FIG.
) and connect it to the anode.
（作用）
次に作用について説明すると、エツチングまたは現像の
場合、半導体材料（Ｓ）をチャック（３）の下面に吸着
した状態でモータを作動し、伝動ベルト（８）によりチ
ャック（３）を回転し、従って半導体材料を回転すると
共に、処理液を通路（２）から槽（１）内に導入し、各
細孔αＯ）を通して上方に噴射する。そのように噴射さ
れた処理液は半導体材料の下向きの表面に当り、且つ該
表面に沿って外方に流れ、その間の処理液との接触によ
って半導体材料が処理される。処理液は槽（１）の頂部
を越えると、とよ（４）に流下し、溜め（５）［戻り、
ポンプ（６）により再び循環されろ。なお、場合によっ
てはとよ（４）は々〈てもよく、槽（１）からオーバフ
ローした処理液を槽（１）外に流下し、溜め（５）に流
してもよい。所望により、チャック（３）の外周から半
導体材料の上面外周に不活性ガスを流出してもよく、そ
れにより処理液が材料の裏面に１わり込むのを防ぐこと
ができる。(Function) Next, to explain the function, in the case of etching or development, the motor is operated with the semiconductor material (S) adsorbed to the bottom surface of the chuck (3), and the chuck (3) is rotated by the transmission belt (8). Therefore, while rotating the semiconductor material, the processing liquid is introduced into the tank (1) from the passageway (2) and is sprayed upward through each pore αO). The treatment liquid so injected impinges on the downwardly facing surface of the semiconductor material and flows outwardly along the surface, during which contact with the treatment liquid processes the semiconductor material. When the processing liquid exceeds the top of the tank (1), it flows down into the toyo (4) and returns to the reservoir (5).
Circulate again by pump (6). Note that, depending on the case, the treatment liquid (4) may be completely removed, and the processing liquid overflowing from the tank (1) may be allowed to flow down to the outside of the tank (1) and into the reservoir (5). If desired, an inert gas may be allowed to flow from the outer periphery of the chuck (3) to the outer periphery of the upper surface of the semiconductor material, thereby preventing the processing liquid from penetrating the back surface of the material.
＝９−
（発明の効果）
従って、半導体材料の下向きの表面は各細孔００）から
噴射されろ処理液によって適切に処理を受ける。即ち、
第７図に示すように、フォトレジスト（２１）などによ
り材料の面（２０）に生じる隅や四部に空気（２２）が
残留し且つ付着しているが、それらの残留空気は細孔（
１０）を通ることによって生じる噴流によって除去され
、さらにエツチングによって生じた反応ガスも表面（２
０）から取払われる。=9- (Effects of the Invention) Therefore, the downward facing surface of the semiconductor material is appropriately treated by the filtration treatment liquid injected from each pore 00). That is,
As shown in Figure 7, air (22) remains and adheres to the corners and four parts of the surface (20) of the material due to photoresist (21), etc.
10), and the reactive gas produced by etching is also removed from the surface (2).
0).
また、このように残留空気や反応ガスが除去されること
はめつき処理の場合も全く同様であり、めっき液との接
触が良好になされ、適切に処理される。Further, the removal of residual air and reaction gas in this way is exactly the same in the case of plating processing, so that contact with the plating solution is made good and processing is performed appropriately.
さらに、エツチング処理などにおいて半導体材料を回転
することなより、半導体材料の面に当って反射した噴流
は遠心力を受け乙ので、半導体材料の表面では処理液は
複雑な乱流となり、その表から空気や反応ガスが除去さ
れるので処理にむら１０−
がなく、且つ処理液の圧力差がないため均一な処理がで
きる。Furthermore, since the semiconductor material is not rotated during etching processing, the jet that hits the surface of the semiconductor material and is reflected is subject to centrifugal force, so the processing liquid becomes a complex turbulent flow on the surface of the semiconductor material, and Since air and reaction gas are removed, there is no unevenness in the processing, and since there is no pressure difference in the processing liquid, uniform processing can be achieved.
第１図は本発明の一例による半導体材料の処理装置の概
略立面図、第２図は第１図の装置に用いられる多数の細
孔のある部材の斜視図、第６図は他の実施例を示す要部
の断面図、第４図はノズルの好ましい形態を示す一部の
断面図、第５図は他の形態の実施例を示す縦断面図、第
６図は第５図の装置に用いられる槽の平面図、そして第
７図は処理すべき半導体材料の一部の拡大断面図を示す
。
図中、１・・・槽、２・・・通路、３．・・・チャック
、１０・・・細孔、１１・・・板状の部材、１２・・・
ノズル、１５・・・押え部材、１７・・・蔭極、１８・
・・陽極、１９・・・導線
特許出願人 相 合 征一部
１１−
ば）
第斗図
第５図
第６図FIG. 1 is a schematic elevational view of a semiconductor material processing apparatus according to an example of the present invention, FIG. 2 is a perspective view of a member with a large number of pores used in the apparatus of FIG. 1, and FIG. 6 is an alternative embodiment of the present invention. FIG. 4 is a partial sectional view showing a preferred form of the nozzle, FIG. 5 is a longitudinal sectional view showing an embodiment of another form, and FIG. 6 is the apparatus of FIG. 5. FIG. 7 shows an enlarged cross-sectional view of a portion of the semiconductor material to be processed. In the figure, 1...tank, 2... passage, 3. ... Chuck, 10 ... Pore, 11 ... Plate-shaped member, 12 ...
Nozzle, 15... Pressing member, 17... Negative pole, 18.
...Anode, 19...Conductor Patent Applicant Part 11-B) Figure 5 Figure 6
Claims (1)
てカップ状の槽と、前記槽の上方に回転自在に設けられ
且つ処理すべき半導体材料をその下面で吸引して支持す
るチャックを含み、半導体材料の下向きの表面は前記槽
内から吹き−にける処理液によって処理される装置にお
いて、前記槽の頂部には多数の細孔が設けられ、前記処
理液は前記多数の細孔を通して前記半導体材料の表面に
対し噴射されろことを特徴とする半導体材料の処理装置
。 （２、特許請求の範囲第１項に記載の装置において、前
記多数の細孔は先端が同じ高さに揃えられた多数のノズ
ルによって形成されている半導体材料の処理装置。 （３）、特許請求の範囲第１項に記載の装置において、
前記多数の細孔は前記槽の頂部に設けられた板状の部材
に形成されている半導体材料の処理装置。 （４）、特許請求の範囲第１項に記載の装置において、
各前記細孔の」１端は前記槽の縁より若干高くなってい
る半導体材料の処理装置。 （５）、特許請求の範囲第１項に記載の装置において、
各前記細孔の上端部の内周は末広状に拡大されている半
導体材料の処理装置。 （６）。処理液としてのめっき液導入用の通路を底部に
備えた力・ツブ状の槽と、前記槽に設けられた陽極およ
び隘極と、前記槽の頂部に水平に置かれた半導体材料を
上から押えろ押え部材を含み、半導体材料の下向きの表
面は前記槽内から吹き上げる処理液によって処理される
装置において、前記槽の頂部には多数の細孔が設けられ
、前記処理液は前記多数の細孔を通して前記半導体材料
の表面に利し噴射されろことを特徴とする半導体材料の
処理装置、。 （７）、特許請求の範囲第６項に記載の装置において、
前記多数の細孔は先端が同じ高さに揃えられた多数のノ
ズルによって形成される半導体材料の処理装置。 （８）１％許請求の範囲第６項に記載の装置において、
前記多数の細孔は槽の頂部に設けられた板状の部材に形
成されている半導体材料の処理装置。 （９）、特許請求の範囲第７項に記載の装置において、
各前記ノズルは金属管からなり且つそれぞれ陽極に接続
されている半導体材料の処理装置。 ００）。特許請求の範囲第６項に記載の装置において、
各前記細孔はそれぞれ陽極に接続された導線を内部に含
んでいる半導体材料の処理装置。[Scope of Claims] (11. A generally cup-shaped tank with a passage for introducing a processing liquid at the bottom, and a rotatably provided above the tank, and sucks the semiconductor material to be processed at the bottom surface of the tank. The apparatus includes a chuck for supporting the semiconductor material, and the downward surface of the semiconductor material is treated with a processing liquid blown from within the tank, wherein the top of the tank is provided with a number of pores, and the processing liquid is A processing device for a semiconductor material, characterized in that the jet is ejected onto the surface of the semiconductor material through the plurality of pores. (2. In the apparatus according to claim 1, the plurality of pores An apparatus for processing semiconductor materials formed by a large number of nozzles arranged at the same height. (3) In the apparatus according to claim 1,
In the semiconductor material processing apparatus, the plurality of pores are formed in a plate-like member provided at the top of the tank. (4) In the device according to claim 1,
An apparatus for processing semiconductor materials, wherein one end of each of the pores is slightly higher than the edge of the tank. (5) In the device according to claim 1,
An apparatus for processing a semiconductor material, wherein the inner periphery of the upper end of each of the pores is widened into a diverging shape. (6). A tubular tank with a passage at the bottom for introducing a plating solution as a processing solution, an anode and a dead pole provided in the tank, and a semiconductor material placed horizontally on the top of the tank are placed from above. In an apparatus that includes a presser foot member and in which the downward surface of the semiconductor material is treated by a processing liquid blown up from the tank, the top of the tank is provided with a large number of pores, and the processing liquid is flowed through the large number of pores. An apparatus for processing a semiconductor material, characterized in that the spray is sprayed onto the surface of the semiconductor material through a hole. (7) In the device according to claim 6,
A semiconductor material processing apparatus in which the plurality of pores are formed by a plurality of nozzles whose tips are aligned at the same height. (8) 1% allowance In the device according to claim 6,
A semiconductor material processing apparatus in which the large number of pores are formed in a plate-like member provided at the top of the tank. (9) In the device according to claim 7,
An apparatus for processing semiconductor materials, wherein each of the nozzles is made of a metal tube and is respectively connected to an anode. 00). In the device according to claim 6,
An apparatus for processing semiconductor materials, wherein each of the pores contains a conductive wire connected to an anode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8715284A JPS60231330A (en) | 1984-04-28 | 1984-04-28 | Semiconductor material processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8715284A JPS60231330A (en) | 1984-04-28 | 1984-04-28 | Semiconductor material processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60231330A true JPS60231330A (en) | 1985-11-16 |
Family
ID=13907005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8715284A Pending JPS60231330A (en) | 1984-04-28 | 1984-04-28 | Semiconductor material processing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60231330A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62276831A (en) * | 1986-02-18 | 1987-12-01 | Matsushita Electronics Corp | Wet treatment of semiconductor wafer |
| JPH0294435A (en) * | 1988-09-29 | 1990-04-05 | Nec Corp | Etching apparatus |
| EP0434434A1 (en) * | 1989-12-20 | 1991-06-26 | THORN EMI plc | Fountain etch system |
| US5377708A (en) * | 1989-03-27 | 1995-01-03 | Semitool, Inc. | Multi-station semiconductor processor with volatilization |
| US5429733A (en) * | 1992-05-21 | 1995-07-04 | Electroplating Engineers Of Japan, Ltd. | Plating device for wafer |
| US5447615A (en) * | 1994-02-02 | 1995-09-05 | Electroplating Engineers Of Japan Limited | Plating device for wafer |
| US5573023A (en) * | 1990-05-18 | 1996-11-12 | Semitool, Inc. | Single wafer processor apparatus |
| US5584310A (en) * | 1993-08-23 | 1996-12-17 | Semitool, Inc. | Semiconductor processing with non-jetting fluid stream discharge array |
| US5791358A (en) * | 1996-11-20 | 1998-08-11 | Sandia Corporation | Rinse trough with improved flow |
| JP2002520850A (en) * | 1998-07-09 | 2002-07-09 | エーシーエム リサーチ，インコーポレイティド | Method and apparatus for electropolishing metal interconnects on semiconductor devices |
| US6497239B2 (en) * | 1999-08-05 | 2002-12-24 | S. C. Fluids, Inc. | Inverted pressure vessel with shielded closure mechanism |
| US6561204B2 (en) * | 2001-09-05 | 2003-05-13 | Silicon Integrated Systems Corp. | Apparatus and method for cleaning wafers with contact holes or via holes |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55134851A (en) * | 1979-04-09 | 1980-10-21 | Fujitsu Ltd | Mask purifier |
| JPS5645761A (en) * | 1979-09-25 | 1981-04-25 | Mitsubishi Electric Corp | Plasma reaction apparatus |
| JPS58210170A (en) * | 1982-06-01 | 1983-12-07 | Seiichiro Sogo | Etching device of thin metallic film or oxidized film |
-
1984
- 1984-04-28 JP JP8715284A patent/JPS60231330A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55134851A (en) * | 1979-04-09 | 1980-10-21 | Fujitsu Ltd | Mask purifier |
| JPS5645761A (en) * | 1979-09-25 | 1981-04-25 | Mitsubishi Electric Corp | Plasma reaction apparatus |
| JPS58210170A (en) * | 1982-06-01 | 1983-12-07 | Seiichiro Sogo | Etching device of thin metallic film or oxidized film |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62276831A (en) * | 1986-02-18 | 1987-12-01 | Matsushita Electronics Corp | Wet treatment of semiconductor wafer |
| JPH0294435A (en) * | 1988-09-29 | 1990-04-05 | Nec Corp | Etching apparatus |
| US5377708A (en) * | 1989-03-27 | 1995-01-03 | Semitool, Inc. | Multi-station semiconductor processor with volatilization |
| EP0434434A1 (en) * | 1989-12-20 | 1991-06-26 | THORN EMI plc | Fountain etch system |
| US5573023A (en) * | 1990-05-18 | 1996-11-12 | Semitool, Inc. | Single wafer processor apparatus |
| US5429733A (en) * | 1992-05-21 | 1995-07-04 | Electroplating Engineers Of Japan, Ltd. | Plating device for wafer |
| US5584310A (en) * | 1993-08-23 | 1996-12-17 | Semitool, Inc. | Semiconductor processing with non-jetting fluid stream discharge array |
| US5447615A (en) * | 1994-02-02 | 1995-09-05 | Electroplating Engineers Of Japan Limited | Plating device for wafer |
| US5791358A (en) * | 1996-11-20 | 1998-08-11 | Sandia Corporation | Rinse trough with improved flow |
| JP2002520850A (en) * | 1998-07-09 | 2002-07-09 | エーシーエム リサーチ，インコーポレイティド | Method and apparatus for electropolishing metal interconnects on semiconductor devices |
| US6497239B2 (en) * | 1999-08-05 | 2002-12-24 | S. C. Fluids, Inc. | Inverted pressure vessel with shielded closure mechanism |
| US6561204B2 (en) * | 2001-09-05 | 2003-05-13 | Silicon Integrated Systems Corp. | Apparatus and method for cleaning wafers with contact holes or via holes |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3265238B2 (en) | Liquid film forming apparatus and method | |
| US5437777A (en) | Apparatus for forming a metal wiring pattern of semiconductor devices | |
| KR0173449B1 (en) | Substrate processing method and apparatus | |
| CN1217034C (en) | Workpiece processing apparatus having a processing chamber with improved processing fluid flow | |
| JPS60231330A (en) | Semiconductor material processing apparatus | |
| US3695928A (en) | Selective coating | |
| KR102546756B1 (en) | Apparatus and method for treating substrate | |
| JP6983571B2 (en) | Board processing method and board processing equipment | |
| JPH0521332A (en) | Resist removing device | |
| CN1638882B (en) | Device and method for drying at least one substrate | |
| JPH0714811A (en) | Cleaning / drying method and cleaning / drying apparatus | |
| JPH09298181A (en) | Substrate rear surface washer | |
| JPH10247635A (en) | Device and method for performing washing treatment for wafer | |
| JPH03272140A (en) | Chemical processing equipment for semiconductor substrates | |
| JP3289469B2 (en) | Substrate cleaning device and cleaning method | |
| JPH0790628A (en) | Etching device and etching method for thin film | |
| US20020139401A1 (en) | Wet process station with water spray of wafer reverse side | |
| KR950004973B1 (en) | Oxide Wet Etching Method Using Inclined Wet Etch Tank | |
| US6647998B2 (en) | Electrostatic charge-free solvent-type dryer for semiconductor wafers | |
| JP4363593B2 (en) | Thin film removal equipment | |
| JP2002235188A (en) | Apparatus and method for treatment with liquid | |
| JPH0341461Y2 (en) | ||
| JP6990342B1 (en) | Substrate wetting method and plating equipment | |
| JPH08253891A (en) | Plating method and plating device | |
| JP2001303295A (en) | Plating apparatus |