JPS60226042A - Information glass substrate and its production - Google Patents
Information glass substrate and its productionInfo
- Publication number
- JPS60226042A JPS60226042A JP59082007A JP8200784A JPS60226042A JP S60226042 A JPS60226042 A JP S60226042A JP 59082007 A JP59082007 A JP 59082007A JP 8200784 A JP8200784 A JP 8200784A JP S60226042 A JPS60226042 A JP S60226042A
- Authority
- JP
- Japan
- Prior art keywords
- information
- layer
- glass substrate
- substrate
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 239000011521 glass Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000001312 dry etching Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 19
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 11
- 238000001020 plasma etching Methods 0.000 abstract description 8
- 239000005361 soda-lime glass Substances 0.000 abstract description 8
- 229910001415 sodium ion Inorganic materials 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 42
- 238000005530 etching Methods 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- CMMUKUYEPRGBFB-UHFFFAOYSA-L dichromic acid Chemical compound O[Cr](=O)(=O)O[Cr](O)(=O)=O CMMUKUYEPRGBFB-UHFFFAOYSA-L 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- -1 etc. Chemical compound 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B23/00—Record carriers not specific to the method of recording or reproducing; Accessories, e.g. containers, specially adapted for co-operation with the recording or reproducing apparatus ; Intermediate mediums; Apparatus or processes specially adapted for their manufacture
- G11B23/0057—Intermediate mediums, i.e. mediums provided with an information structure not specific to the method of reproducing or duplication such as matrixes for mechanical pressing of an information structure ; record carriers having a relief information structure provided with or included in layers not specific for a single reproducing method; apparatus or processes specially adapted for their manufacture
Landscapes
- Manufacturing Optical Record Carriers (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、光メモリディスクや光磁気ディスク。[Detailed description of the invention] [Technical field of invention] The present invention relates to an optical memory disk or a magneto-optical disk.
ビデオディスク、コンパクトディスク等の情報記録用基
板として、あるいはこれらの情報記録用基板を製造する
ための情報原盤として用いられる情茜ガラス其址卦rr
g染め創忌十社r朋半1〔従来技術〕
従来上述した各稲メモリディスクは、例えば次のように
して形成されている。まず、ガラス基板の一主面上にフ
ォトレジストを撒布し、次に強度変調されたレーザ光を
照射し、その後現像することによって所望のレジストパ
ターンを形成し情報原盤とする。次いで、レジストパタ
ーンを有する主面に導電性をもたせるために銀等の金属
薄膜をコートした後厚さ約0.3mのニッケルメッキを
施す。このニッケル層を情報原盤から剥離してマスター
盤を作シ、次いでその表面部を重クロム酸などで酸化し
、再びニッケルをメッキした後そのニッケル層を剥離し
てマザー盤とする。その後このマザー盤を用いて上述し
たと同様の方法でスタンパ−を作る。このメタ/バーと
ガラス基板との間に樹脂を入れ、熱または紫外線などに
よシ硬化させてスタンパ−の凹凸を転写し、情報記録用
基板を形成する。とこで、上記凹凸は情報記録用トラッ
クを構成する案内溝および位置決め用のプレグルーブと
1−で用いられ、2)4.のであり、@1身げト述した
情報記録用基板の樹脂層の凹凸面に各種記録用薄膜およ
び保護層を形成しさらに必要に応じて記録情報の高密度
化、長寿命化をはかるためにこのような基板を情報記録
層が内側となるよう2枚張り合せて、メモリディスクが
形成される。An informational glass substrate used as an information recording substrate for video discs, compact discs, etc., or as an information master for manufacturing these information recording substrates.
G Dye Soki Jusha R Hohan 1 [Prior Art] Conventionally, each rice memory disk described above is formed, for example, as follows. First, a photoresist is spread on one main surface of a glass substrate, then irradiated with intensity-modulated laser light, and then developed to form a desired resist pattern and use it as an information master. Next, the main surface having the resist pattern is coated with a thin film of metal such as silver in order to have conductivity, and then nickel plating is applied to a thickness of about 0.3 m. This nickel layer is peeled off from the information master disk to create a master disk, the surface of which is then oxidized with dichromic acid, etc., nickel is plated again, and the nickel layer is peeled off to form a mother disk. Thereafter, a stamper is made using this mother board in the same manner as described above. A resin is placed between the meta/bar and the glass substrate, and is cured by heat or ultraviolet rays to transfer the unevenness of the stamper to form an information recording substrate. Here, the above-mentioned unevenness is used in the guide groove and positioning pre-groove that constitute the information recording track, and 2) 4. In order to form various recording thin films and protective layers on the uneven surface of the resin layer of the information recording substrate mentioned in @1, and to further increase the density of recorded information and extend its life as necessary. A memory disk is formed by bonding two such substrates together with the information recording layer facing inside.
しかし々がら、このような方法では、スタンパ−上の欠
陥がそのまま樹脂層に転写されるため、欠陥のないスタ
ンパ−を作る必要があるが、まず情報原盤を作る段階で
、500〜1500Aの厚さのフォトレジストを均一に
塗布することが困難であるばかシでなくでき上ったフォ
トレジスト膜も強度的に弱いという欠点があった。However, with this method, defects on the stamper are directly transferred to the resin layer, so it is necessary to make a stamper without defects. It is difficult to uniformly apply the photoresist, and the resulting photoresist film also has the disadvantage of being weak in strength.
このようなフォトレジストを用いる代シに、ガラス基板
上に形成したシリコン酸化物層に凹凸を設けて情報原盤
とすることも提案されているC特開昭59−3731号
公報)。ところが、通常情報原盤には価格の点からソー
ダライムガラスが用いられるが、このソーダライムガラ
ス基板上にシリコン酸化物層を蒸着法あるいはスパッタ
リング法等で形成した場合、ガラス基板内部に含まれる
ナトリウムイオンがシリコン酸化物層内に拡散してくる
ために、CF4等の気体を用いたドライエツチング法に
よって微細な凹凸を制御性良く形成することが困難とな
る問題を有する。特に、エツチング速度はナトリウムイ
オンの濃度に大きく影響されるため、均一な深さの凹凸
を形成することは困難である。Instead of using such a photoresist, it has been proposed to provide an information master by providing unevenness on a silicon oxide layer formed on a glass substrate (Japanese Unexamined Patent Publication No. 59-3731). However, soda-lime glass is usually used for information masters due to its cost, but when a silicon oxide layer is formed on this soda-lime glass substrate by vapor deposition or sputtering, the sodium ions contained inside the glass substrate are removed. diffuses into the silicon oxide layer, making it difficult to form fine irregularities with good controllability by dry etching using a gas such as CF4. In particular, since the etching rate is greatly affected by the concentration of sodium ions, it is difficult to form irregularities of uniform depth.
また、このようにして形成した情報原盤、さらにそれか
ら形成したスタンパ−を用いて情報記録用基板を作る段
階でも、樹脂層を均一に形成しなければならないこと、
特に複屈折等の影響を小さくして光学的に均一な層を形
成しなければならないことや、この樹脂層にスタンパ−
上の微小な凹凸を正確に転写しなければならないことな
ど製造上程々の困難があった。Furthermore, even at the stage of making an information recording substrate using the information master thus formed and the stamper formed therefrom, the resin layer must be uniformly formed;
In particular, it is necessary to form an optically uniform layer by minimizing the effects of birefringence, etc., and it is necessary to form a stamper on this resin layer.
There were some manufacturing difficulties, such as the need to accurately transfer the minute irregularities on the top.
本発明はこのような事情に鑑みてなされたもので、その
目的は、情報原盤や情報記録用基板として用いられる均
一性の高い凹凸情報層を有し、耐湿・耐候性にすぐれ機
械的強度の高い情報ガラス基板およびその製造方法を提
供することにある。The present invention was made in view of the above circumstances, and its purpose is to have a highly uniform uneven information layer that can be used as an information master disc or information recording substrate, and has excellent moisture and weather resistance and mechanical strength. An object of the present invention is to provide a high information glass substrate and a manufacturing method thereof.
このような目的を達成するために、本発明による情報ガ
ラス基板は、ディスク状のガラス基板の一主面上にシリ
コン窒化物からなる凹凸状の情報層を設けたものである
。In order to achieve such an object, the information glass substrate according to the present invention has an uneven information layer made of silicon nitride on one main surface of a disk-shaped glass substrate.
また、このような情報ガラス基板を得るために、本発明
による情報ガラス基板の製造方法は、ガラス基板上にシ
リコン窒化物層を形成した後、ドライエツチング法によ
って所望の凹凸を形成するものである。以下、実施例を
用いて本発明の詳細な説明する。In addition, in order to obtain such an information glass substrate, the method for manufacturing an information glass substrate according to the present invention involves forming a silicon nitride layer on a glass substrate, and then forming desired irregularities by dry etching. . Hereinafter, the present invention will be explained in detail using Examples.
第1図〜第4図は本発明の一実施例を示す工程断面図で
ある。まず、外径200yrm を内径15 II r
厚さ10+mのディスク状のソーダライムガラス基板1
に、真空蒸着法またはスパッタリング法によって200
OAの一定の膜厚を有するシリコン窒化物層2を形成す
る。その後、シラザン処理を施してレジストとの付着力
を強めた上で、この基板上にフォトレジスト、例えばA
Z1350(米国Hoechst社製)3を0.4〜4
μm塗布し、プリベークを行なう(第1図)。1 to 4 are process cross-sectional views showing one embodiment of the present invention. First, the outer diameter is 200 yr and the inner diameter is 15 II r.
Disc-shaped soda lime glass substrate 1 with a thickness of 10+m
200% by vacuum evaporation method or sputtering method.
A silicon nitride layer 2 having a constant thickness of OA is formed. After that, a silazane treatment is applied to strengthen the adhesion to the resist, and then a photoresist, such as A
Z1350 (manufactured by Hoechst, USA) 3 to 0.4 to 4
µm coating and pre-baking (Fig. 1).
次に、この基板を回転させながら、0.6〜1μmの径
に集光したレーザ光を情報信号に従って照射してフォト
レジストを感光し、次いで現像を行なって、レジストパ
ターン4を形成する(第2図)。Next, while rotating this substrate, a laser beam focused to a diameter of 0.6 to 1 μm is irradiated according to the information signal to expose the photoresist, and then development is performed to form a resist pattern 4 (first step). Figure 2).
さらに乾燥およびボストベークを行なった後、上記レジ
ストパターン4をマスクとしてプラズマエツチングを行
ない、シリコン窒化物層2に凹凸を形成して情報層5と
する(第3図)。After drying and post-baking, plasma etching is performed using the resist pattern 4 as a mask to form irregularities in the silicon nitride layer 2 to form the information layer 5 (FIG. 3).
プラズマエツチングは、平行平板形プラズマエツチング
装置を用い、分圧0.27orrの酸素ガスと分圧0.
ITorrのCF4ガスとの混合ガス中、高周波出力
200W(o、44W/d)の条件で行なった。エツチ
ング深さは、後にメモリディスクの情報記録用トラック
への情報の記録およびその再生に用いられるレーザ光の
波長をλ、メモリディスク基板の屈折率をnとすると、
およそλ/41またはλ/8nとする必要があシ、本実
施例では1300〜1400 Aとした。シリコン酸化
物と異なシシリコン窒化物中にはガラス基板1からのナ
トリウムイオンが拡散しないため、フォトレジストパタ
ーンに従って正確な凹凸を再現性良く形成することがで
きる。Plasma etching is performed using a parallel plate plasma etching apparatus using oxygen gas at a partial pressure of 0.27 orr and oxygen gas at a partial pressure of 0.27 orr.
The test was carried out in a mixed gas of ITorr with CF4 gas under conditions of high frequency output of 200 W (o, 44 W/d). The etching depth is calculated as follows, where λ is the wavelength of the laser beam used later to record information on the information recording track of the memory disk and playback thereof, and n is the refractive index of the memory disk substrate.
It is necessary to set it to approximately λ/41 or λ/8n, and in this example, it was set to 1300 to 1400 A. Since sodium ions from the glass substrate 1 do not diffuse into silicon nitride, which is different from silicon oxide, accurate unevenness can be formed with good reproducibility according to the photoresist pattern.
ここで、はじめシリコン窒化物層2を厚く形成し、凹部
が所定の深さに達した時点でエツチングを終了するよう
に、つまシハーフエッチングを行なうようにしたため、
上記凹部の深さをエツチング時間等によシ所望の値に制
御する必要がある。Here, the silicon nitride layer 2 was formed thick at first, and half etching was performed so that the etching was completed when the recess reached a predetermined depth.
It is necessary to control the depth of the recess to a desired value by adjusting etching time and the like.
エツチング深さを制御する他の方法としては、はじめか
ら、シリコン窒化物層2の厚さを必要なエツチング深さ
と同等の値に制御しておき、下地が露出するまでエツチ
ングを行なう方法があシ、この方法では下地に含まれる
ナトリウムイオンのために下地のエツチング速度がきわ
めて小さくなり、下地は実質的にエツチングされないた
め、ドライエツチング装置の性能上シリコン窒化物層の
エツチング速度に部分的な差異が生ずるような場合には
、それに影響されずに均一な深さが得られる利点がある
。Another method for controlling the etching depth is to control the thickness of the silicon nitride layer 2 from the beginning to a value equivalent to the required etching depth, and then perform etching until the underlying layer is exposed. In this method, the etching rate of the underlayer is extremely low due to the sodium ions contained in the underlayer, and the underlayer is not substantially etched. Therefore, the etching speed of the silicon nitride layer may partially differ due to the performance of the dry etching equipment. In such cases, there is an advantage in that a uniform depth can be obtained without being affected by this.
このようにして凹凸状の情報層5を形成した後、アセト
ンなどの有機溶剤あるいは濃硫酸で残ったレジストパタ
ーン4を除去して情報原盤が完成する(第4図)。After forming the uneven information layer 5 in this way, the remaining resist pattern 4 is removed using an organic solvent such as acetone or concentrated sulfuric acid to complete the information master (FIG. 4).
上記工程中、フォトレジスト3の付着力を高めるために
、シリコン窒化物層2を形成したガラス基板1をシラザ
ン処理したが、同様の目的のためにはクロム等の薄膜を
形成し、その上にレジストをコートする方法も有効であ
る。また、フォトレジスト3をレーザー光で直接感光さ
せてパターニングする方法を用いたが、もちろん、フォ
トマスクを用いて露光を行なってもよい。During the above process, the glass substrate 1 on which the silicon nitride layer 2 was formed was treated with silazane in order to increase the adhesion of the photoresist 3, but for the same purpose, a thin film of chromium or the like was formed and then A method of coating with resist is also effective. Furthermore, although a method was used in which the photoresist 3 was patterned by directly exposing it to laser light, it is of course possible to perform the exposure using a photomask.
さらに、シリコン窒化物層2の形成方法としては、上述
した真空蒸着法やスパッタリング法の他に、イオンブレ
ーティング法やCVD法等も用いることができる。Furthermore, as a method for forming the silicon nitride layer 2, in addition to the above-mentioned vacuum evaporation method and sputtering method, ion blasting method, CVD method, etc. can also be used.
また、シリコン窒化物層2をエツチングするために平行
平板形プラズマエツチング装置を用いたが、円筒形プラ
ズマエツチング装置等を用いてもよいと、とは言うまで
もない。また、エツチングガスとしてエツチング条件を
安定にするために酸素とCH4との混合ガスを用いたが
、CF4単独のガスでもよく、さらにCF、の代シにc
HF:l 、 C2F、等の他のフッ素系のガスでもよ
い。また、酸素の代シに窒素、水素等を安定化のために
混合してもよい。Further, although a parallel plate type plasma etching apparatus is used to etch the silicon nitride layer 2, it goes without saying that a cylindrical type plasma etching apparatus or the like may also be used. In addition, a mixed gas of oxygen and CH4 was used as the etching gas to stabilize the etching conditions, but CF4 gas alone may also be used.
Other fluorine-based gases such as HF:l and C2F may also be used. Further, nitrogen, hydrogen, etc. may be mixed in place of oxygen for stabilization.
また、レジスト除去方法としては、上述したような湿式
法の他に、酸素ガスを主成分とするプラズマアッシング
法を用いてもよい。Further, as a method for removing the resist, in addition to the above-mentioned wet method, a plasma ashing method using oxygen gas as a main component may be used.
上述した実施例は、本発明を情報原盤に適用した例であ
シ、このようにして形成した情報原盤を用いて従来と同
様にスタンバ−を形成し、樹脂層に凹凸を転写して情報
記録用基板を形成することができる。The above-mentioned embodiment is an example in which the present invention is applied to an information master disc. Using the information master disc formed in this way, a stand bar is formed in the same manner as before, and the unevenness is transferred to the resin layer to record information. A substrate for use can be formed.
この際、本発明による情報原盤は、凹凸情報層が従来の
ような軟らかいレジストではなく緻密で硬いシリコン窒
化物でできているため、傷つきに<<、かつ洗浄によっ
て凹凸情報層が剥離することもないので、情報層の欠陥
の原因となるほこシ等を容易に除去することができ、高
品質のスタンパ−を作ることができる。At this time, in the information master according to the present invention, since the uneven information layer is made of dense and hard silicon nitride instead of the conventional soft resist, it is less likely to be scratched and the uneven information layer may peel off during cleaning. Therefore, dust and the like that cause defects in the information layer can be easily removed, and a high-quality stamper can be manufactured.
報記録用基板自体に適用することによシ、容易に、きわ
めて均一性の高い凹凸情報層を有する情報記録用基板を
形成することができる。すなわち、例えば外径2001
1I++内径15M、厚さ1.2mのソーダライムガラ
ス基板を出発材料として、シリコン窒化物を成膜した後
ドライエツチング法によシブレグループ用の凹凸層を形
成する工程によシ情報記録用基板を形成することができ
る。By applying the present invention to the information recording substrate itself, it is possible to easily form an information recording substrate having a highly uniform uneven information layer. That is, for example, the outer diameter 2001
1I++ Using a soda lime glass substrate with an inner diameter of 15M and a thickness of 1.2m as a starting material, a silicon nitride film is formed, and then a concavo-convex layer for the sible group is formed by a dry etching method to form an information recording substrate. can be formed.
この場合、凹凸状の情報層は、従来のような有樹樹脂か
らなる凹凸情報層に比較して耐湿性の高い無機材料によ
って形成されることとなシ、はるかに耐候性にすぐれた
情報記録用基板を得ることができる。In this case, the uneven information layer is formed of an inorganic material with higher moisture resistance than the conventional uneven information layer made of resin, and the information recording layer has much better weather resistance. A substrate for use can be obtained.
なお、このように直接情報記録用基板として製造する場
合には、シリコン窒化物層のエツチングを下地のソーダ
ライムガラス基板が露出するまで行なう場合には、例え
ば凹凸を設けた情報層とその上に形成される記録媒体と
の間にアルミニウム酸化物、シリコン化合物などを介在
させて記録媒体中へのナトリウムイオンの拡散を防コト
−1−,2ととによシ、情報記録用基板の長寿命化が容
易に達成できる。In addition, in the case of manufacturing the substrate directly as an information recording substrate in this way, if the silicon nitride layer is etched until the underlying soda lime glass substrate is exposed, for example, an information layer with unevenness and an information layer on top of the substrate may be etched. The diffusion of sodium ions into the recording medium can be prevented by interposing aluminum oxide, silicon compounds, etc. between the recording medium to be formed, and the life of the information recording substrate can be extended. can be easily achieved.
また、エツチング方法としてプラズマエツチング法を用
いた場合について説明したが、リアクティブエツチング
法、スパッタエツチング法、あるいはイオンビームエツ
チング法など他のドライエツチング法を用いても、容易
に、かつ再現性良く凹凸を形成することができる。In addition, although we have explained the case where plasma etching is used as the etching method, other dry etching methods such as reactive etching, sputter etching, or ion beam etching can also be used to easily and reproducibly remove the unevenness. can be formed.
以上説明したように、本発明によれば、ガラス基板の一
生面上にしてシリコン窒化物からなる凹凸状の情報層を
設けたことによシ、安価なソーダライムガラスを用いな
がら、しかもナトリウムイオンの拡散を防いでプラズマ
エツチングによシ、均一性の高い凹凸情報層を有ししか
も機械的強度の高い情報原盤や、同じく均一性の高い凹
凸情報層を有ししかも耐久性にすぐれた情報記録用基板
を容易に得ることができる。特に後者については、スタ
ンパ−等が不要となシ製造工程が簡略化されるとともに
、その後メモリディスクとしで完成した後も、ガラス基
板からのナトリウムイオンによる記録媒体の劣化を防止
することが可能であるという利点を有する。As explained above, according to the present invention, by providing the uneven information layer made of silicon nitride on the entire surface of the glass substrate, it is possible to use inexpensive soda lime glass and yet An information master with a highly uniform uneven information layer that prevents the diffusion of information and is resistant to plasma etching and has high mechanical strength, and an information record that also has a highly uniform uneven information layer and has excellent durability. substrates can be easily obtained. Especially for the latter, the manufacturing process is simplified since there is no need for a stamper, and even after the memory disk is completed, it is possible to prevent the recording medium from deteriorating due to sodium ions from the glass substrate. It has the advantage of being
第1図ないし第4図は本発明の一実施例を示す工程断面
図である。
1・拳−・ソーダライムガラス基板、2・・ψ・シリコ
ン窒化物層、3・・・・フォトレジスト、4・・・・レ
ジストパターン、5・・・・情報層。
特許出願人 株式会社 保 谷 硝 子代理人 山川政
樹(ほか2名)1 to 4 are process sectional views showing one embodiment of the present invention. 1. Fist - soda lime glass substrate, 2... ψ silicon nitride layer, 3... photoresist, 4... resist pattern, 5... information layer. Patent applicant Yasutani Glass Co., Ltd. Agent Masaki Yamakawa (and 2 others)
Claims (2)
主面上に設けたシリコン窒化物からなる凹凸状の情報層
とを備えたことを特徴とする情報ガラス基板。(1) A disk-shaped glass substrate and the -
1. An information glass substrate characterized by comprising an uneven information layer made of silicon nitride provided on a main surface.
合物層を形成する工程と、ドライエツチング法を用いて
上記シリコン窒化物層に所望の凹凸を設けて情報層を形
成する工程とを含む情報ガラス基板の製造方法。(2) A step of forming a silicon compound layer on one main surface of a disk-shaped glass substrate, and a step of forming an information layer by providing desired unevenness in the silicon nitride layer using a dry etching method. A method for manufacturing an information glass substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59082007A JPS60226042A (en) | 1984-04-25 | 1984-04-25 | Information glass substrate and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59082007A JPS60226042A (en) | 1984-04-25 | 1984-04-25 | Information glass substrate and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60226042A true JPS60226042A (en) | 1985-11-11 |
Family
ID=13762465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59082007A Pending JPS60226042A (en) | 1984-04-25 | 1984-04-25 | Information glass substrate and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60226042A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6166242A (en) * | 1984-09-06 | 1986-04-05 | Matsushita Electric Ind Co Ltd | Information recording disk |
JPS61162844A (en) * | 1985-01-14 | 1986-07-23 | Ricoh Co Ltd | Photomagnetic recording medium and its production |
JPS63230889A (en) * | 1987-03-20 | 1988-09-27 | Toshiba Corp | Production of substrate |
JPH01307035A (en) * | 1988-06-06 | 1989-12-12 | Nippon Telegr & Teleph Corp <Ntt> | Optical disk substrate and its production method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54107705A (en) * | 1978-02-10 | 1979-08-23 | Pioneer Electronic Corp | Method of fabricating information recording carrier |
-
1984
- 1984-04-25 JP JP59082007A patent/JPS60226042A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54107705A (en) * | 1978-02-10 | 1979-08-23 | Pioneer Electronic Corp | Method of fabricating information recording carrier |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6166242A (en) * | 1984-09-06 | 1986-04-05 | Matsushita Electric Ind Co Ltd | Information recording disk |
JPS61162844A (en) * | 1985-01-14 | 1986-07-23 | Ricoh Co Ltd | Photomagnetic recording medium and its production |
JPS63230889A (en) * | 1987-03-20 | 1988-09-27 | Toshiba Corp | Production of substrate |
JPH01307035A (en) * | 1988-06-06 | 1989-12-12 | Nippon Telegr & Teleph Corp <Ntt> | Optical disk substrate and its production method |
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