JPS60216407A - High frequency dielectric porcelain composition - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dielectric ceramic composition for high frequency use.

In high frequency regions such as microwaves and millimeter waves, dielectric ceramics are widely used for dielectric resonators, dielectric substrates, etc.

Conventionally, this type of dielectric porcelain was made of, for example, ZrO
,-8nug-Ti01-based material, Ba0-Tie-based material, (Ba, 5r)(Er, Ti)O,-based material, B
a(Zn.

"ra)o" type materials are known.

These various materials have a dielectric constant (1) of 20 to 40. Q is 3000-6000. It is an excellent material with a temperature coefficient (t/) of resonance frequency close to OI)pm/l''.

However, recently, as the frequency range used has become higher, materials having a higher Q value have been required.

The inventors have addressed the above points! As a result of extensive research, we have discovered a dielectric ceramic composition for high frequencies that has a high dielectric constant and a high Q value in the high frequency range.

That is, the gist of this invention is that BaO, N
It consists of i O, M Q O, and Ta ffi Os, which is expressed by the general formula Ba(Nl zM9 yTaz ) 0
7/2-s /* When expressed as (X+7), x*
7+ z Gatsu, 03=X=0.16.0.17= 7≦
0.31, 'J, 61≦2≦11.72 (however,
x + y + z = 1), and if necessary, 'C
1 This is a high frequency dielectric ceramic composition containing at least one lanthanide rare earth element R in an amount of 10 mole or less calculated as oxide R303.

Here %Ba(MIK"7TaZ)Or/2-37
! (X+7) Smell [, X, 7. The reason why Z is limited to the above-mentioned ranges is as follows.

In other words, the reason why X is in the range of .],06 to 16 is because if X is less than Q,03, Q will decrease and the temperature coefficient (τf) of the small resonance frequency will become too large in the positive direction. Moreover, if it exceeds 9 or 16, firing becomes difficult.

The reason why y is set in the range of 1117 to 9.61 is that y is 0.1
This is because if it is less than 7, Q decreases, and if it exceeds 0.51, firing becomes difficult.

The reason why 2 is in the range of 161 to 72 is that 2 is 0.61
If it is less than '172, sintering becomes difficult, and if it exceeds '172,
This is because the temperature coefficient (τf) of the resonance frequency becomes too large in the positive direction.

In addition, if necessary, a higher Q value can be obtained by adding C lanthanide-based oxide R2O3, but the reason why the amount added is limited to 10 molt or less is because if the amount added exceeds 10 molt, the Q value decreases. be.

This invention will be described below as an actual example. ++ttlf's BaC0,,Nip
, MgC0,.

Using a 'RA, O8, the materials were weighed so as to obtain porcelain having the composition ratio shown in Table 1, and the weighed raw materials were placed in a ball mill with water and wet mixed for 2 hours. Next, this mixture was dehydrated and dried, and then calcined for 2 hours at 12001: The calcined product was placed in a ball mill together with water and an organic binder, and wet-pulverized for 2 hours.

Next, this pulverized product was dried and then granulated through a 50-mesh mesh, and the resulting powder was molded into a disk having dimensions of 10WjφX5JElt under a pressure of 2000 Kf/-. Further, this disk was fired at 1500'c for 4 hours to obtain a porcelain sample.

The dielectric constant (ε) and Q at a C1 frequency of 1QGHz were measured for the obtained ceramic sample using the dielectric resonator method, and from the temperature change rate of the resonant frequency in the temperature range from 25℃ to 85''C, The temperature coefficient (τf) of the resonance frequency was calculated.The results are shown in Table 1.

Example 2 High purity BaC0, Nip, MgC0,
.

Ta, Os, I+a, O,, CeO,, Pr, O,
, Nd, 0. , Sm.

On + D7zOs e Ho, O,, Er, O, were weighed to obtain porcelain having the composition ratio shown in Table 2, and the weighed raw materials were processed in the same manner as in Example 1 to obtain a porcelain sample. Obtained.

The obtained porcelain sample was measured in the same manner as in Example 1, and the results are shown in Table 2.

(6) Items marked with * in Tables 1 and 2 are outside the scope of this invention, and the others are within the scope of this invention.

In Table 1, sample number 10.11.12.13゜14.15 is Ba(1JixIJ(yyTa, )O,
, -s, (,+,)ノx+ 7+ I! The value of i is outside the range of the present invention, and sintering is difficult or the properties are deteriorated.

In Table 2, sample number 19.23.27.31゜35.39.43.47.51 is an example in which lanthanide oxide R101 was added with more than 10.0 mol of C.
Since Q is lowered, K is excluded from the scope of this invention. Also sample number 52.53.54.55゜56.5
7 is Ba(Ni3jM9yTaz)Oy/z-m/z
If the values of (X+7)Ox, , , are outside the scope of this invention, sintering may be difficult or the properties may deteriorate.
C.

In addition, for sample number 10.11.13 in Table 1 and sample number 52.53.55 in Table 2, ° [ indicates the characteristics °
This is because sufficiently sintered porcelain could not be obtained and its properties could not be measured.

In addition, 'C' in Example 2 is a lanthanide oxide R8
0, Toshi'rLa*Oi, C3Ch + "rxO
s + Nd*Os.

It has been confirmed that similar results are obtained by adding am, Os, Dy, O,, Ho, O,, Er, O, and other lanthanide oxides. .

As described above, according to the present invention, it is possible to obtain a high-frequency dielectric ceramic composition that has a high dielectric constant and a high Q value that has not been obtained conventionally.

Furthermore, if a C lanthanide-based oxide is added as necessary, a high-frequency dielectric ceramic composition exhibiting an even higher Q value can be obtained.Furthermore, by appropriately selecting the composition,
The temperature coefficient (τf) of the resonant frequency can be set to oppm/”e.

According to the invention, it is possible to provide a high frequency dielectric ceramic useful for applications such as a dielectric adjustment rod, a dielectric adjustment rod, and a dielectric substrate.

patent applicant Murata Manufacturing Co., Ltd.

Claims (1)

[Claims] +I) Consisting of Bad, Nip, MfO, Tatda, which is expressed by the general formula Ba(Niy, MIFyTa,)0. /
, when expressed as +372 (X+7),! , 7.
z Gatsu, 03=X=θ, 16. Q, 17=y≦'J,
51.0.61 = g =0.72 (x+y
-1=1) A dielectric ceramic composition for high frequency use. +z) Bad, Nip, MsuQ, Ta! From Oi, we can convert this into the general formula Ba(NixllyTaJOy7z-
When expressed as s7z (X+7), X, 7. Z is 1), 03=X='1.16. '], 17=7:113
1. a, 61=z=9. y2 (however, X+70Z−=
:1) High-frequency dielectric ceramic composition containing 0 or less additives