JPS60214529A - X-ray generating device - Google Patents
X-ray generating deviceInfo
- Publication number
- JPS60214529A JPS60214529A JP59070747A JP7074784A JPS60214529A JP S60214529 A JPS60214529 A JP S60214529A JP 59070747 A JP59070747 A JP 59070747A JP 7074784 A JP7074784 A JP 7074784A JP S60214529 A JPS60214529 A JP S60214529A
- Authority
- JP
- Japan
- Prior art keywords
- filament
- electron beam
- strip
- sectional area
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 claims abstract description 18
- 238000009826 distribution Methods 0.000 abstract description 19
- 238000000034 method Methods 0.000 abstract description 4
- 230000003190 augmentative effect Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
(発明の分野)
本発明は、帯状フィラメントから放出される電子ビーム
を対陰極に衝突させてX線を発生させるX線発生装置に
関し、詳しくは帯状フィラメントのビーム電流分布を均
一にし、X線露光をする際のむら焼けを防止したX線発
生装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of the Invention) The present invention relates to an X-ray generator that generates X-rays by colliding an electron beam emitted from a strip filament with an anticathode. The present invention relates to an X-ray generator that makes the X-rays uniform and prevents uneven burns during X-ray exposure.
(発明の背景)
従来、半導体デバイス等の微細回路パターン転写技術の
1つとしてX線露光技術が知られている。(Background of the Invention) Conventionally, X-ray exposure technology has been known as one of the techniques for transferring fine circuit patterns for semiconductor devices and the like.
軟X線は、光に比べ波長が非常に短く、また有機物も容
易に透過するのでサブミクロン・リソグラフィーを光露
光法で行なう際の反射、干渉、回折といった現象につい
ての問題を簡単に解決できる。Soft X-rays have a much shorter wavelength than light and can easily pass through organic matter, making it easy to solve problems with phenomena such as reflection, interference, and diffraction when performing submicron lithography using light exposure.
しかし、X線露光法にも半導体デバイス等の製造におい
ていくつかの問題点があり、その主なものの1つにレジ
ストのむら焼けがある。現在、X線露光法において線状
焦点を持つ帯状フィラメントを使ったX線発生装置が提
案されているが、むら焼けの問題については未だ解決さ
れていない。However, the X-ray exposure method also has several problems in the manufacture of semiconductor devices, and one of the main ones is uneven burning of the resist. Currently, an X-ray generator using a band-shaped filament with a linear focus has been proposed in the X-ray exposure method, but the problem of uneven exposure has not yet been solved.
以下、図面により従来例を説明する。A conventional example will be explained below with reference to the drawings.
第1図は、線状焦点を持つ帯状フィラメントを使用した
軟X線発生装置の外観図であり、第2図はソーラースリ
ットを用いた整X線露光装置の模式図である。第1図お
よび第2図において、1は電子線7を放出する帯状フィ
ラメント、2は電子線7を集束するウェネルト、3は対
陰極、4は偏向電極である。8はX線で、9は電子線7
が対陰極3に衝突する電子線照射面である。11はX線
マスク、12はソーラースリツh il’i にび5は
ウェハ6上に塗られたレジストである。FIG. 1 is an external view of a soft X-ray generator using a band-shaped filament with a linear focal point, and FIG. 2 is a schematic diagram of a regular X-ray exposure device using a Solar slit. In FIGS. 1 and 2, 1 is a strip filament that emits an electron beam 7, 2 is a Wehnelt that focuses the electron beam 7, 3 is an anticathode, and 4 is a deflection electrode. 8 is an X-ray, 9 is an electron beam 7
is the electron beam irradiation surface that collides with the anticathode 3. 11 is an X-ray mask; 12 is a solar slit; and 5 is a resist coated on a wafer 6.
第2図のX線露光装置において、図面に垂直に延びた帯
状フィラメンh 1から発生する電子1!+!7は、ウ
ェネルト2により集束され、さらに偏向電極4により偏
向されて対陰極30表面十の電子線照射面9に衝突する
。この電子線7が対陰極3に衝突することにより、X線
8が発生し、ソーラースリット12とX線マスク11を
通過()てレジスト5に入射し露光する。In the X-ray exposure apparatus shown in FIG. 2, electrons 1! +! 7 is focused by the Wehnelt 2, further deflected by the deflection electrode 4, and collides with the electron beam irradiation surface 9 on the surface of the anticathode 30. When this electron beam 7 collides with the anticathode 3, X-rays 8 are generated, which pass through the solar slit 12 and the X-ray mask 11 and enter the resist 5 for exposure.
この際、むら焼(−)は、レジスト5に入射するX線8
のX線量分布が不均一1.1ことl)s rら起こる。At this time, murayaki (-) is the X-ray 8 incident on the resist 5.
The non-uniform X-ray dose distribution of 1.1 s r et al.
このX線量分布の不均一さ1.t、電子線照Oil面9
1−二aEける電子¥!+度分イ11が均一 (゛あれ
ば解消でき、電子密度分布を均一=にづるにtま、帯状
−ノイラメント1より発生するビーム電流分布が均一で
なければならない。さらにビーム電流分布を均一にづる
ためには、帯状フィラメント1の長さ方向の温度分布を
一様にする必要がある。This non-uniformity of X-ray dose distribution 1. t, electron beam oil surface 9
1-2aE Keru electron ¥! + degree A11 is uniform (゛It can be solved if the electron density distribution is uniform = the beam current distribution generated from the band-like noise 1 must be uniform. Furthermore, the beam current distribution must be uniform. In order to achieve this, it is necessary to make the temperature distribution in the length direction of the strip filament 1 uniform.
しかし、従来のX線発生装置の帯状フィラメント1は、
第3図に示すようにタンタルやタングステン等の均一厚
、均一幅の薄い板を曲げただけの構造のものが多く、こ
のような構造であると、フィラメントホルダー(図示せ
ず)による帯状フィラメン1〜1の保持部Aからフィシ
メン1〜ホルダーに熱が伝導づるので、帯状フィラメン
ト1の中央から両端に向って温度が下′がるという現象
が起こる。すなわち、従来の帯状フィラメントでは、長
さ方向の温度分布が均一にならないためビーム電流分布
も均一とならず、従って入射するxsut分布も不均一
になりむら焼けが起るという欠点があった。However, the strip filament 1 of the conventional X-ray generator is
As shown in Figure 3, many structures are simply bent thin plates of tantalum, tungsten, etc. with uniform thickness and uniform width. Since heat is conducted from the holding portion A of filament 1 to the holder, a phenomenon occurs in which the temperature decreases from the center of filament strip 1 toward both ends. That is, in the conventional belt-shaped filament, since the temperature distribution in the length direction is not uniform, the beam current distribution is also not uniform, and therefore the incident xsut distribution is also non-uniform, resulting in uneven burning.
(発明の目的および概要)
本発明は、上述の従来形の問題点に鑑み、帯状フィラメ
ントから放出される電子ビームを対陰極に衝突させてX
線を発生させるX線発生装置において、帯状フィラメン
トの両端部付近の断面積を3−
減少させることにより、フィラメン1〜ホルダー保持部
の手前部分の熱抵抗および電気抵抗を増大せしめ、電子
ビームの出力時の帯状フィラメントの温度分布を均一に
し、ビーム電流を均一にりることを目的とし、半導体デ
バイス等のパターンを転写するX線露光装置に使用した
場合むら焼(′)を防止し得るものである。(Objective and Summary of the Invention) In view of the above-mentioned problems of the conventional method, the present invention aims to provide an X
In an X-ray generator that generates rays, by reducing the cross-sectional area near both ends of the strip filament, the thermal resistance and electrical resistance of the filament 1 to the front part of the holder holding part are increased, and the output of the electron beam is increased. The purpose is to make the temperature distribution of the strip-shaped filament uniform and the beam current uniform, and it can prevent uneven firing (') when used in X-ray exposure equipment that transfers patterns of semiconductor devices, etc. be.
(実施例の説明) 以下、図面に基づいて本発明の詳細な説明する。(Explanation of Examples) Hereinafter, the present invention will be described in detail based on the drawings.
第4図は、本発明の一実施例に係る帯状フィラメントの
構造を示す。同図の帯状フィラメント1は第3図に示す
よう(2従来の均一厚、均一幅の帯状フィラメン1〜1
に間口部10を設けたちのeある。FIG. 4 shows the structure of a strip filament according to an embodiment of the present invention. The filament strip 1 in the same figure is as shown in FIG.
There is a frontage 10 provided in the building.
このような加工を行イfうことにより、開口部10付近
では断面積が小さくイするため、この部分の熱抵抗が大
きくなる0、従−)−([片目1部1oに1近の熱の伝
導が抑制され熱がフィシメン1〜ホルダー(図示けず)
に逃げるのを防止する。また、断面積が小さくなった部
分では、電気11(抗も大きくなるため、その4一
部分の発熱聞が増大し、フィラメント1の中央部から両
端に向って温度が低下するのを防止する。By carrying out such processing, the cross-sectional area becomes small near the opening 10, so the thermal resistance of this part becomes large. conduction is suppressed and heat is transferred from ficimen 1 to holder (not shown)
prevent them from escaping. In addition, in the portion where the cross-sectional area is reduced, the electric resistance 11 (resistance) is also increased, so the heat generation area of the 4 portions increases, and the temperature is prevented from decreasing from the center of the filament 1 toward both ends.
従って、第1図のX線発生装置または第2図のX線露光
装置の帯状フィラメント1として第4図のものを用いる
ことにより、上記2つの作用によって帯状フィラメント
1の長さ方向の温度分布を一様にし、ビーム電流分布を
均一にすることが可能となるので、レジメ1〜5に入射
するX線量分布が均一どなりむら焼けをなくすことがで
きる。Therefore, by using the filament shown in FIG. 4 as the strip filament 1 of the X-ray generator shown in FIG. 1 or the X-ray exposure device shown in FIG. Since it is possible to make the beam current distribution uniform, the X-ray dose distribution incident on Regimes 1 to 5 can be made uniform and uneven burns can be eliminated.
第5〜7図は本発明のX線1発生装置に係る帯状フィラ
メントの他の実施例を示す。5 to 7 show other embodiments of the belt-like filament according to the X-ray 1 generator of the present invention.
第5図のフィラメントにおいては、第4図の開口部に代
えて切欠部10′ を設けているが、第4図のものと同
様の効果を得ることができる。In the filament shown in FIG. 5, a notch 10' is provided in place of the opening shown in FIG. 4, but the same effect as that shown in FIG. 4 can be obtained.
すなわち、本発明の帯状フィラメント1は、両端部(=
l近における熱抵抗および電気抵抗を大きくし、その結
果帯状フィラメント1の長さ方向の温度分布が一様にな
るような形状であればどんな形状に加工してもよい。例
えば、第6図に示すように両端部に大ぎく切欠部10′
を設けてもよく、第7図に示すように切欠部10′およ
び聞11部10の両方を設けてもよく、また厚さを減少
させてもよい。That is, the strip filament 1 of the present invention has both ends (=
Any shape may be used as long as it increases the thermal resistance and electrical resistance in the vicinity of 1, and as a result, the temperature distribution in the length direction of the filament strip 1 becomes uniform. For example, as shown in FIG. 6, there are large notches 10' at both ends.
Alternatively, as shown in FIG. 7, both the notch 10' and the groove 10 may be provided, or the thickness may be reduced.
尚、上側は軟X線露光菰tNに適用することを想定して
いるが、検査装置の線源にも使用できる。Although the upper part is intended to be applied to soft X-ray exposure, it can also be used as a radiation source for inspection equipment.
(発明の効果)
以上説明したように、本発明によると、均一厚、均一幅
の帯状フィラメントの両Di:部付近の断面積を減少さ
せることに。1、す、電子線放出時の帯状ノイラメン]
への長さ方向のと1目α分イ[1を一様に4ることがで
き、順次、ビーム電流分/l+、電子線照射面の電子密
度分布およびレジス1へに入射リ−るX線枦分布が均一
となる。従−)(、半導体ラバイス等の露光時のむら焼
(′Jをなくづことが−i1能どなり、半導体デバイス
等の製造工程にお(Jる歩留りを向トさせることができ
る。(Effects of the Invention) As explained above, according to the present invention, the cross-sectional area near both Di: portions of a belt-shaped filament having a uniform thickness and a uniform width can be reduced. 1. Band-shaped neuramen during electron beam emission]
In the length direction of The line distribution becomes uniform. Eliminating the uneven firing ('J) during exposure of semiconductor laminations, etc., improves the -i1 function and improves the yield in the manufacturing process of semiconductor devices, etc.
第1図は、従来の線状焦点を持つ帯状フィラメントを使
用したX線発生装置の外観図、第2図はソーラースリッ
i・を使用したX線露光装置の模式図、
第3図は従来の帯状フィラメントの斜視図、第4図は本
発明の一実施例に係る帯状フィラメントの斜視図、おに
び、
第5〜7図は、第4図の帯状フィラメントの変形例の斜
視図である。
1・・・帯状フィラメン1〜.2・・・ウェネルト、3
・・・対陰極、4・・・偏向電極、5・・・レジスト1
6・・・ウェハ、7・・・電子線、8・・・X線、9・
・・電子線照射面、10;・・開口部、10′・・・切
欠部、11・・・X線マスク、12・・・ソーラースリ
ット。
特許出願人 キャノン株式会社
代理人 弁理士 伊東展翅
代理人 弁理士 伊東哲也Figure 1 is an external view of a conventional X-ray generator using a band-shaped filament with a linear focal point, Figure 2 is a schematic diagram of an X-ray exposure apparatus using Solar Slip i, and Figure 3 is a conventional X-ray generator. FIG. 4 is a perspective view of a filament strip according to an embodiment of the present invention. FIGS. 5 to 7 are perspective views of modifications of the filament strip shown in FIG. 4. 1... Band-shaped filamen 1~. 2... Wehnelt, 3
... Anticathode, 4... Deflection electrode, 5... Resist 1
6... Wafer, 7... Electron beam, 8... X-ray, 9...
...Electron beam irradiation surface, 10; ...opening, 10'...notch, 11...X-ray mask, 12...solar slit. Patent Applicant Canon Co., Ltd. Agent Patent Attorney Nobuo Ito Agent Patent Attorney Tetsuya Ito
Claims (1)
出される電子ビームを対陰極に衝突させて該対陰極より
X線を発生させるX線発生装置において、 前記帯状フィラメントの両端部付近の断面積を減少させ
たことを特徴とするX線発生装置。 2、前記帯状フィラメントの両端部付近は、開口部また
は切欠部を設けることにより断面積を減少さぜた特許請
求の範囲第1項記載のX線発生装置。[Scope of Claims] 1. An X-ray generator that has a band-shaped filament and generates X-rays from the anticathode by colliding an electron beam emitted from the band-shaped filament with an anticathode, comprising: both ends of the band-shaped filament; An X-ray generator characterized by a reduced cross-sectional area in the vicinity. 2. The X-ray generator according to claim 1, wherein the cross-sectional area is reduced by providing openings or notches near both ends of the filament strip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59070747A JPS60214529A (en) | 1984-04-11 | 1984-04-11 | X-ray generating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59070747A JPS60214529A (en) | 1984-04-11 | 1984-04-11 | X-ray generating device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60214529A true JPS60214529A (en) | 1985-10-26 |
Family
ID=13440414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59070747A Pending JPS60214529A (en) | 1984-04-11 | 1984-04-11 | X-ray generating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60214529A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005174939A (en) * | 2003-12-12 | 2005-06-30 | Ge Medical Systems Global Technology Co Llc | Method for manufacturing x-ray tube cathode filament, and x-ray tube |
JP2012015045A (en) * | 2010-07-05 | 2012-01-19 | Shimadzu Corp | Planar filament for x-ray tube and x-ray tube |
-
1984
- 1984-04-11 JP JP59070747A patent/JPS60214529A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005174939A (en) * | 2003-12-12 | 2005-06-30 | Ge Medical Systems Global Technology Co Llc | Method for manufacturing x-ray tube cathode filament, and x-ray tube |
JP4582517B2 (en) * | 2003-12-12 | 2010-11-17 | ジーイー・メディカル・システムズ・グローバル・テクノロジー・カンパニー・エルエルシー | X-ray tube cathode filament manufacturing method and X-ray tube |
JP2012015045A (en) * | 2010-07-05 | 2012-01-19 | Shimadzu Corp | Planar filament for x-ray tube and x-ray tube |
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