JPS60213032A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS60213032A JPS60213032A JP59069341A JP6934184A JPS60213032A JP S60213032 A JPS60213032 A JP S60213032A JP 59069341 A JP59069341 A JP 59069341A JP 6934184 A JP6934184 A JP 6934184A JP S60213032 A JPS60213032 A JP S60213032A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- oxide film
- region
- geh4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000000034 method Methods 0.000 claims abstract description 13
- 150000004767 nitrides Chemical class 0.000 claims abstract description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 10
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052986 germanium hydride Inorganic materials 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N Nitrogen dioxide Chemical compound O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 24
- 239000013078 crystal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はゲルマニウムを用いた半導体装置及びその製造
方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor device using germanium and a method for manufacturing the same.
従来例の構成とその問題点
ゲルマニウムＧｅ半導体装置の表面不活性化保護膜とし
ては種々の方法によりＧｅ基板上にＳ ｉＯ２＋ Ｓ
ｉ３Ｎ ４等の絶縁性無定形薄膜が用いられている。し
かしながらこれらの無定形薄膜とＧｅの界面は、例えば
Ｓ １−８ ｉ Ｏ２で代表されるＳｔを基板として用
いた半導体装置に比して特性が非常に悪いものとなって
いる。５ｉ−Ｓｉｎ２系と同様に熱酸化法によるＧ ｅ
０２の形成も試みられているが、Ｇｅ ＧｅＯ２の界
面特性が悪く、又水に溶けるもの、水には溶けないがコ
ロイド溶液を作るもの等極めて不安定な酸化膜で、熱酸
化法による酸化膜の形成法は実用化されていないのが現
状である。一方Ｇｏは材料的にＳｉに比して移動度が大
きく超高周波半導体装置等の材料として有望な材料であ
る。Conventional structure and its problems As a surface passivation protective film of a germanium Ge semiconductor device, SiO2+S is deposited on a Ge substrate by various methods.
An insulating amorphous thin film such as i3N4 is used. However, the interface between these amorphous thin films and Ge has very poor characteristics compared to a semiconductor device using St as a substrate, for example, represented by S 1-8 i O2. G e by thermal oxidation method like the 5i-Sin2 system
Although attempts have been made to form GeO2, the interfacial properties of GeGeO2 are poor, and the oxide film is extremely unstable, such as those that dissolve in water, and those that do not dissolve in water but form colloidal solutions, so it is impossible to form an oxide film by thermal oxidation. At present, the formation method has not been put to practical use. On the other hand, Go has a higher mobility than Si and is a promising material for ultra-high frequency semiconductor devices.
発明の目的
本発明は上述の従来の欠点を除去し、界面特性の優れた
表面不活性化された半導体装置およびその製造方法を提
供することを目的とする、発明の構成
本発明の骨子とするところは、Ｇｏ半導体基体の表面に
Ｇｅ−３ｔからなる酸化物或は窒化物を表面不活性化保
護膜として用いるものである。OBJECTS OF THE INVENTION The present invention aims to eliminate the above-mentioned conventional drawbacks and provide a surface-passivated semiconductor device with excellent interfacial properties and a method for manufacturing the same. However, an oxide or nitride made of Ge-3t is used as a surface inactivation protective film on the surface of the Go semiconductor substrate.
実織例の説明 以下本発明を実権例で説明する。Explanation of actual weaving examples The present invention will be explained below using practical examples.
（実権例１）
図はＧｅＭＯ３ＦＥＴの例である。ｎ型ＧｅＬ［Ｇｏ−
８ｉからなる酸化膜２を形成する。酸化膜２はＳｉＨ４
，ＧｅＨ４，Ｎｏ２を用いて化学気相成長法（ＣＶＤ法
）で形成した。酸化膜２の所定領域に開孔部を設け、Ｂ
をイオン注入し、熱処理することでｐ型導電層を形成し
ソース領域３．ドレイン領域４を形成する。ソース領域
３．ドレイン領域［ＡＩからなる電極を形成し、ソース
、ドレイン電極６，６を設ける。酸化膜２の表面にＡＩ
からなる電極を形成し、ゲート電極７を設けて、００Ｍ
Ｏ８ＦＥＴが完成する。ＭＯ８構造の容量−電圧特性か
らめた表面準位は７ Ｘ １０”Ｃｍ ’ 、酸化膜の
絶縁破壊強度は３Ｘ１０６Ｖ／ｍを絶縁膜として良好な
特性を示した。(Example 1) The figure shows an example of GeMO3FET. n-type GeL[Go-
An oxide film 2 made of 8i is formed. Oxide film 2 is SiH4
, GeH4, and No2 by chemical vapor deposition (CVD). An opening is provided in a predetermined region of the oxide film 2, and B
A p-type conductive layer is formed by ion implantation and heat treatment to form the source region 3. A drain region 4 is formed. Source area 3. Drain region [An electrode made of AI is formed, and source and drain electrodes 6, 6 are provided. AI on the surface of oxide film 2
00M is formed, and a gate electrode 7 is provided.
O8FET is completed. The surface level calculated from the capacitance-voltage characteristics of the MO8 structure was 7 x 10''Cm', and the dielectric breakdown strength of the oxide film was 3 x 106 V/m, which showed good characteristics when used as an insulating film.
（実施例２）
Ｇｅ−３ｔから窒化物の形成法である。Ｓ １Ｈ４ｒＧ
ｅＨ４，ＮＨ３を用い、基板温度３８ｏｃ 、ガス圧４
０ｐａ 、高周波出力１ｏｏｗのプラズマ中で堆積・す
る。(Example 2) This is a method of forming nitride from Ge-3t. S 1H4rG
Using eH4, NH3, substrate temperature 38oc, gas pressure 4
It is deposited in a plasma at 0pa and high frequency output of 1oow.
（実権例３）
Ｇｏ基板表面ＫＭＢＥ法（Ｍｏ１ｅｃｕｌａｒ Ｂｅａ
ｍＥｐｉｔａｘｙ法）を用い、基板温度５６０ＣでＧｏ
ｘＳｔｌ−！（ｘ＝０．２５ ）の単結晶を２００ＯＡ
成長。しかる後高圧酸化法を用い７００Ｃで８０分酸化
し、Ｇｏ−８ｔからなる熱酸化嗅を形成する。(Example 3) Go substrate surface KMBE method (Mo1ular Bea
mEpitaxy method) at a substrate temperature of 560C.
xStl-! (x=0.25) single crystal at 200OA
growth. Thereafter, it is oxidized at 700C for 80 minutes using a high-pressure oxidation method to form a thermally oxidized gas consisting of Go-8t.
（実施例４）
実権例３と同様にＧｅ！Ｓｉ１ 、（ｘ＝０．２５）の
単結晶を２．０００人成長し、ＮＨ３ガスを高周波を用
いてプラズマ化し、プラズマ中で基板７００Ｃで３００
分窒化し、Ｇｅ−８１からなる窒化膜を形成する・
以上説明した様にＧｅ半導体装置に於て、Ｇｅ−８ｆか
らなる酸化物、窒化物を表面不活性保護膜とするもので
ある。Ｇｅ−８ｉからなる酸化膜、窒化膜がＧｅ半導体
装置に用いた場合良好な電気特性を示すのは、Ｇｏと熱
膨張係数がはｙ一致すること、又ＧｅｘＳ１１−！単結
晶を形成し、酸化、窒化する場合は基板ＧｅとＧｅ１ｉ
４．−ｘ力行＼略子常数が一致し、連続して形成され、
かつＳｉを含有しているので酸化、窒化した場合、Ｓ
ｉ／ Ｓ ｉＯ２系に近い良好な絶縁膜が形成されると
考えている。(Example 4) As in Actual Example 3, Ge! 2,000 single crystals of Si1 (x=0.25) were grown, NH3 gas was turned into plasma using high frequency, and the substrate was heated at 700C in the plasma at 300C.
As explained above, in a Ge semiconductor device, an oxide or nitride made of Ge-8f is used as a surface inactive protective film. When an oxide film or a nitride film made of Ge-8i is used in a Ge semiconductor device, it exhibits good electrical properties because the coefficient of thermal expansion is the same as that of Go, and also because GexS11-! When forming a single crystal, oxidizing and nitriding, the substrate Ge and Ge1i
4. −x power running\abbreviation constants match and are formed continuously,
And since it contains Si, when oxidized or nitrided, S
It is believed that a good insulating film similar to that of the i/S iO2 system will be formed.
実権例ではＧｏ−Ｓｉからなる酸化膜、窒化膜で説明し
たが、上記酸化膜、窒化膜上に気相成長法（ＣＶＤ法）
Ｋｊす５ｌｏ２．Ｓｉ３Ｎ４等の膜を重ねて覆合膜とし
ても良い。In the actual example, an oxide film and a nitride film made of Go-Si were explained, but vapor phase growth method (CVD method) can be applied to the above oxide film and nitride film.
Kjsu5lo2. A covering film may be formed by overlapping films such as Si3N4.
又実権例１ではＭＯＳＦＥＴで説明したが、ダイオード
、集積回路にも用いられることは勿論である。又不純物
拡散、イオン注入のマスク等にも用いられることは勿論
である・
発明の詳細
な説明した様に本発明によれば、Ｇｏ基板上にＧｏ−３
ｉからなる酸化膜、窒化膜を設けることにより界面特性
の優れた絶縁膜が形成でき、Ｇｅ半導体装置の電気的特
性が改善され、その工業的価値は大なるものである。Furthermore, although MOSFET has been explained in Example 1, it goes without saying that it can also be used for diodes and integrated circuits. It goes without saying that it can also be used as a mask for impurity diffusion, ion implantation, etc. As described in detail, according to the present invention, Go-3 is deposited on a Go substrate.
By providing an oxide film or a nitride film made of i, an insulating film with excellent interfacial properties can be formed, and the electrical properties of the Ge semiconductor device are improved, which has great industrial value.
図は本発明の一実施例に係るＧｅ半導体装置の断面図で
ある。
１・・・・・・ｎ型Ｇｅ、２・・・・・・Ｇｏ−３ｉか
らなる酸化膜、３・・・・・・ソース領域、４・・・・
・・ドレイン領域、６・・・・・・ソース電極、６・・
・・・・ドレイン電極、７・・・・・・ゲート電極。The figure is a sectional view of a Ge semiconductor device according to an embodiment of the present invention. 1... n-type Ge, 2... oxide film made of Go-3i, 3... source region, 4...
...Drain region, 6...Source electrode, 6...
...Drain electrode, 7...Gate electrode.
Claims (2)
リコンからなる酸化物又は窒化物を設けた部力を少なく
とも１部に有することを特徴とする半導体装置。(1) A semiconductor device characterized in that at least a portion of the surface of a germanium semiconductor is provided with an oxide or nitride made of germanium silicon.
コンからなる半導体薄層を堆積し、上記半導体薄層を酸
化或は窒化することを特徴とする半導体装置の製造方法
。(2) A method for manufacturing a semiconductor device, which comprises depositing a semiconductor thin layer made of germanium silicon on the surface of a germanium semiconductor, and oxidizing or nitriding the semiconductor thin layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59069341A JPS60213032A (en) | 1984-04-06 | 1984-04-06 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59069341A JPS60213032A (en) | 1984-04-06 | 1984-04-06 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60213032A true JPS60213032A (en) | 1985-10-25 |
Family
ID=13399747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59069341A Pending JPS60213032A (en) | 1984-04-06 | 1984-04-06 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60213032A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6399570A (en) * | 1986-06-18 | 1988-04-30 | エイ・ティ・アンド・ティ・コーポレーション | Semiconductor device and its manufacturing method |
| JPH01202826A (en) * | 1987-12-28 | 1989-08-15 | Dow Corning Corp | Method of forming ceramic coating on substrate |
| JPH01204432A (en) * | 1987-12-28 | 1989-08-17 | Dow Corning Corp | Method of forming ceramic coating on substrate |
-
1984
- 1984-04-06 JP JP59069341A patent/JPS60213032A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6399570A (en) * | 1986-06-18 | 1988-04-30 | エイ・ティ・アンド・ティ・コーポレーション | Semiconductor device and its manufacturing method |
| JPH01202826A (en) * | 1987-12-28 | 1989-08-15 | Dow Corning Corp | Method of forming ceramic coating on substrate |
| JPH01204432A (en) * | 1987-12-28 | 1989-08-17 | Dow Corning Corp | Method of forming ceramic coating on substrate |
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