JPS60211347A - Gaseous hydrogen sensor - Google Patents
Gaseous hydrogen sensorInfo
- Publication number
- JPS60211347A JPS60211347A JP6933584A JP6933584A JPS60211347A JP S60211347 A JPS60211347 A JP S60211347A JP 6933584 A JP6933584 A JP 6933584A JP 6933584 A JP6933584 A JP 6933584A JP S60211347 A JPS60211347 A JP S60211347A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- hydrogen
- film
- hydrogen gas
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000001257 hydrogen Substances 0.000 title abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 title abstract description 10
- 125000004435 hydrogen atom Chemical class [H]* 0.000 title 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 12
- 238000012856 packing Methods 0.000 claims abstract description 10
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 9
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001930 tungsten oxide Inorganic materials 0.000 claims abstract description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 21
- 239000010408 film Substances 0.000 claims description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 150000002431 hydrogen Chemical class 0.000 abstract 2
- 230000003197 catalytic effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 239000001282 iso-butane Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、水素ガスの気体中に含有される量を電気的信
号として検出する水素ガスセンサーに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a hydrogen gas sensor that detects the amount of hydrogen gas contained in the gas as an electrical signal.
従来例の構成とその問題点
最近、エネルギー需要の増大、環境汚染によるクリーン
エネルギーの要望から、水素ガスをエネルギー源に使用
しようとする要求が高まっている。Conventional configurations and their problems Recently, due to the increase in energy demand and the desire for clean energy due to environmental pollution, there has been an increasing demand for using hydrogen gas as an energy source.
一方、水素ガスは、−引火点が低く危険性の高いガスで
あることから、水素ガスのガス濡れを検出するガスセン
サーの要求も高まりつつある。On the other hand, since hydrogen gas is a highly dangerous gas with a low flash point, there is an increasing demand for gas sensors that detect gas wetness of hydrogen gas.
従来、一般に使用されている水素ガスセンサーは、加熱
白金線において水素ガスを燃焼させることによる白金線
の電気抵抗値変化を利用したものである。このようなセ
ンサーにおいては、次の欠点を有していた。すなわち、
水素ガス以外のイソブタン、プロパン等の可燃性のガス
が共存ｌする場合にも、水素ガスと同様に感知してしま
い誤動作する。そのため水素ガスだけを感知できる信頼
性の高いセンサーが望まれていた。Conventionally, commonly used hydrogen gas sensors utilize changes in the electrical resistance of a platinum wire caused by burning hydrogen gas in a heated platinum wire. Such a sensor had the following drawbacks. That is,
Even if flammable gases other than hydrogen gas, such as isobutane and propane, coexist, they will be detected in the same way as hydrogen gas and will malfunction. Therefore, there was a need for a highly reliable sensor that could only detect hydrogen gas.
従来より、酸化タングステン（ＷＯ２）が白金等の触媒
により水素と反応することが知られている。It has been known that tungsten oxide (WO2) reacts with hydrogen using a catalyst such as platinum.
その反応機構は、酸化タングステンと白金もしくはパラ
ジウム等の接触界面において、水素ガスが酸化タングス
テン中にＩｎｔｅｒｃａ／ａｔｉｏｎ（Ｓｐｉ４．／ｏ
ｖｅｒ現象とも言う）することであり、その結果、生成
したタングステンブロンズの電気抵抗が、極端に低くな
る。The reaction mechanism is that hydrogen gas enters tungsten oxide at the contact interface between tungsten oxide and platinum or palladium.
As a result, the electrical resistance of the produced tungsten bronze becomes extremely low.
このような現象を利用したものとして、例えば特開昭５
７−７４６４８号公報には、スパッタ蒸着によるＷＯ３
膜を利用したガスセンサーが記載されている。しかし、
とのＷＯ３膜は多結晶体であり、水素ガスに対して感度
の低いものであった。For example, Japanese Patent Application Laid-open No. 5 (1973)
7-74648, WO3 by sputter deposition
Gas sensors using membranes have been described. but,
The WO3 film was polycrystalline and had low sensitivity to hydrogen gas.
発明の目的
本発明は、このＷＯ３膜を利用する水素ガスセンサーを
改良して、より感度を高くすることを目的とする。OBJECTS OF THE INVENTION The present invention aims to improve the hydrogen gas sensor that utilizes this WO3 film to make it more sensitive.
発明の構成
本発明は、充填密度の低いアモルファスＷＯ３膜が水素
ガスに対して高感度であることを見出したことに基づく
もので、第１の電極上にアモルファスＷＯ３膜を形成し
、その上に第２電極として白金もしくはパラジウムの薄
膜を設けたものである。Structure of the Invention The present invention is based on the discovery that an amorphous WO3 film with a low packing density is highly sensitive to hydrogen gas. A thin film of platinum or palladium is provided as the second electrode.
本発明では、前記のように、触媒金属の白金もしくはパ
ラジウムが第２の電極を兼用しているのなお、ＷＯ２の
充填密度は４．０〜６ 、Ｏｙ／ｍＡ、その膜厚は１０
０〜１００００人が好ましい。In the present invention, as mentioned above, the catalyst metal platinum or palladium also serves as the second electrode, and the packing density of WO2 is 4.0 to 6 Oy/mA, and the film thickness is 10
Preferably 0 to 10,000 people.
実施例の説明 実施例１ セラミック・ガラス等の絶縁性基板上に、Ｐｔ。Description of examples Example 1 Pt on an insulating substrate such as ceramic or glass.
Ｐｄ、Ｎｉ 、Ｔｉ 、Ｔａ、Ａ（１，Ａｑ、ＡＩ等の
金属もしくはＩｎ２ｏ３．５ｎｏ２等の半導体からなる
第１の電極を設け、その上に真空蒸着法によってアモル
ファスＷＯ３膜を形成し、さらにその上にパラジウムを
蒸着によって積層し、第２の電極を設けた。A first electrode made of a metal such as Pd, Ni, Ti, Ta, A(1, Aq, AI, etc.) or a semiconductor such as In2o3.5no2 is provided, and an amorphous WO3 film is formed thereon by a vacuum evaporation method. Palladium was laminated thereon by vapor deposition, and a second electrode was provided.
第１図は上記のようにして構成した水素ガスセンサーを
示すもので、１は基板、２は第１の電極、３はＷＯ３膜
、４は第２の電極である。ＷＯ２の充填密度は５ 、４
ｐ／ｃｔｌｉ、その膜厚は３０００人であり、第２の
電極の膜厚は５００人である。FIG. 1 shows a hydrogen gas sensor constructed as described above, in which 1 is a substrate, 2 is a first electrode, 3 is a WO3 film, and 4 is a second electrode. The packing density of WO2 is 5,4
p/ctli, its thickness is 3000 mm, and the thickness of the second electrode is 500 mm.
なお、６および６はそれぞれ第１および第２の電極のリ
ード、７は電気抵抗の検出器である。Note that 6 and 6 are leads for the first and second electrodes, respectively, and 7 is an electrical resistance detector.
上記のセンサー部に一定濃度の水素ガスを吹きつけると
、第１電極と第２電極間の抵抗が大きく変化する。水素
ガス濃度と電極間の抵抗値の関係を第２図に示す。When a certain concentration of hydrogen gas is blown onto the sensor section, the resistance between the first electrode and the second electrode changes significantly. FIG. 2 shows the relationship between the hydrogen gas concentration and the resistance value between the electrodes.
なお、電気抵抗値の測定は、±５０ ｍＶ、 ６０Ｈｚ
で行なった。測定値は水素ガス吹きつけ後３秒後の値で
ある。この後、センサー部に空気を吹きつけると、５〜
１０秒以内に元の状態に回復した。The electrical resistance value is measured at ±50 mV, 60Hz.
I did it. The measured value is the value 3 seconds after spraying hydrogen gas. After this, when air is blown onto the sensor part, 5~
It recovered to its original state within 10 seconds.
実施例２
実施例１においてアモルファスＷＯ３膜の蒸着時の真空
度をかえて異なった充填密度の膜を３０００人の厚みに
蒸着し、実施例１と同様のセンサーを構成して試験した
。Example 2 In Example 1, the degree of vacuum during the deposition of the amorphous WO3 film was changed, and films with different packing densities were deposited to a thickness of 3000 mm, and the same sensor as in Example 1 was constructed and tested.
その結果、充填密度が低くなる膜はど水素ガスに対する
感度が高くなった。しかし、充填密度が低くなるとＷｏ
３膜自身が脆くなり、安定性に欠けることが判かった。As a result, membranes with lower packing densities were more sensitive to hydrogen gas. However, when the packing density becomes low, Wo
It was found that the 3 films themselves became brittle and lacked stability.
安定で、かつ高感度のＶＶＯ３膜としては、充填密度４
ｏ〜６ｔ Ｏｆ／ｃ、ａの範囲のものが好捷しかった。A stable and highly sensitive VVO3 film has a packing density of 4.
Those in the range of o to 6t Of/c, a were favorable.
さらに、ＷＯ３膜の充填密度を５．４ｙ／ｃ？ｌ！と一
定にして蒸着膜厚を変化させて検討した結果、薄い状態
の膜はど高い感度を示した。好ましい膜厚は１００〜１
００００人の範囲であった。Furthermore, the packing density of the WO3 film is 5.4y/c? l! As a result of examining the deposition film thickness while keeping it constant, the thinner film showed the highest sensitivity. The preferred film thickness is 100-1
It was in the range of 0,000 people.
実施例３
実施例１において、第２電極のパラジウムにかえて、白
金を用いたセンサーを作成し、水素ガスに対する感度を
測定した結果、実施例１とほぼ同程度の感度が得られた
。Example 3 In Example 1, a sensor was made using platinum instead of palladium for the second electrode, and the sensitivity to hydrogen gas was measured. As a result, almost the same sensitivity as in Example 1 was obtained.
実施例４
実施例１において、第２電極のパラジウムの蒸着膜厚の
異なるセンサーを作成した。パラジウム膜厚が薄い程■
ｏ３への水素ガスのインターカレーション反応は速くな
るが、電極自身の電気抵抗が高くなる。パラジウム膜厚
は１００〜１０００人が好ましいものであった。白金に
ついても同様であった。Example 4 In Example 1, sensors were created in which the thickness of the palladium vapor deposition film of the second electrode was different. The thinner the palladium film is, the
Although the intercalation reaction of hydrogen gas to o3 becomes faster, the electrical resistance of the electrode itself becomes higher. The thickness of the palladium film was preferably 100 to 1,000. The same was true for platinum.
発明の効果
以上のように、本発明によれば、構造が簡単で高感度の
安定した水素ガスセンサーが得られる。Effects of the Invention As described above, according to the present invention, a highly sensitive and stable hydrogen gas sensor with a simple structure can be obtained.
また、このセンサーは、他の可燃性ガスに応答すること
がないので、信頼性の高いものである・Additionally, this sensor is highly reliable as it does not respond to other flammable gases.
第１図は本発明の水素ガスセンサーの実施例を示す要部
を断面にした図、第２図は水素ガス濃度とセンサーの電
気抵抗値の関係を示す図である。
１・・・・・基板、２・・・・・・第１の電極、３・・
・・・・ｗＯ３膜、４・・・・・・第２の電極。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
Ｈｅ ＪＬｊｌｌ ｔｐｐｒｎ）FIG. 1 is a cross-sectional view of the main part of a hydrogen gas sensor according to an embodiment of the present invention, and FIG. 2 is a diagram showing the relationship between the hydrogen gas concentration and the electrical resistance value of the sensor. 1...Substrate, 2...First electrode, 3...
... wO3 film, 4... second electrode. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2He JLjll tpprn)
Claims (3)
を設け、さらにその上に第２電極として白金もしくはパ
ラジウムの薄膜層を積層したことを特徴とする水素ガス
センサー。(1) A hydrogen gas sensor characterized in that an amorphous tungsten oxide layer is provided on a first electrode, and a platinum or palladium thin film layer is further laminated thereon as a second electrode.
、Ｏｆ／ｃｔＡで、かつ膜厚１００〜１００００人で
ある特許請求の範囲第１項記載の水素ガスセンサー。(2) The tungsten oxide layer has a packing density of 4.0 to 6.
, Of/ctA, and a film thickness of 100 to 10,000. The hydrogen gas sensor according to claim 1.
ｏｏＯ人である特許請求の範囲第２項記載の水素ガスセ
ンサー。(3) The thickness of the platinum or palladium film is 100 to 1
The hydrogen gas sensor according to claim 2, which is an ooO person.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6933584A JPS60211347A (en) | 1984-04-06 | 1984-04-06 | Gaseous hydrogen sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6933584A JPS60211347A (en) | 1984-04-06 | 1984-04-06 | Gaseous hydrogen sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60211347A true JPS60211347A (en) | 1985-10-23 |
| JPH053539B2 JPH053539B2 (en) | 1993-01-18 |
Family
ID=13399574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6933584A Granted JPS60211347A (en) | 1984-04-06 | 1984-04-06 | Gaseous hydrogen sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60211347A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4440572A1 (en) * | 1994-11-14 | 1996-05-15 | Fraunhofer Ges Forschung | Switchable coating structure |
| JP2007071866A (en) * | 2005-08-10 | 2007-03-22 | Tokyo Univ Of Science | Thin film for gas sensor, element body for gas sensor, and method for manufacturing element body for gas sensor |
| JP2011021911A (en) * | 2009-07-13 | 2011-02-03 | Ulvac Japan Ltd | Hydrogen gas sensor and method of manufacturing the same |
| JP2011203256A (en) * | 2010-03-25 | 2011-10-13 | Stichting Imec Nederland | Amorphous thin film for sensing |
| WO2018123674A1 (en) * | 2016-12-28 | 2018-07-05 | パナソニックＩｐマネジメント株式会社 | Gas detection device, gas sensor system, fuel cell vehicle, and hydrogen detection method |
| WO2018123673A1 (en) * | 2016-12-28 | 2018-07-05 | パナソニックＩｐマネジメント株式会社 | Gas detection device, gas detection system, fuel cell vehicle, and gas detection method |
| US10408779B2 (en) | 2016-03-25 | 2019-09-10 | Panasonic Intellectual Property Management Co., Ltd. | Gas sensor including metal oxide layer and hydrogen detection method using gas sensor |
| JP2019200071A (en) * | 2018-05-14 | 2019-11-21 | キヤノン株式会社 | Reducing gas detection material, and reducing gas detection sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53141097A (en) * | 1977-05-16 | 1978-12-08 | Toshiba Corp | Gas sensing element |
| JPS53141098A (en) * | 1977-05-16 | 1978-12-08 | Toshiba Corp | Gas sensing element |
| JPS53141096A (en) * | 1977-05-16 | 1978-12-08 | Toshiba Corp | Gas sensing element |
| JPS55124058A (en) * | 1979-03-09 | 1980-09-24 | Gen Motors Corp | Titanium dioxide exhaust sensor |
| JPS5690250A (en) * | 1979-12-22 | 1981-07-22 | Matsushita Electric Works Ltd | Detection element of combustible gas |
| JPS5774648A (en) * | 1980-08-28 | 1982-05-10 | Siemens Ag | Selective thin film gas sensor and manufacture thereof |
| JPS5857702A (en) * | 1981-09-30 | 1983-04-06 | 三洋電機株式会社 | Moisture sensor |
| JPS58182545A (en) * | 1982-04-21 | 1983-10-25 | Hitachi Ltd | Carbon monoxide gas detection element |
-
1984
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53141097A (en) * | 1977-05-16 | 1978-12-08 | Toshiba Corp | Gas sensing element |
| JPS53141098A (en) * | 1977-05-16 | 1978-12-08 | Toshiba Corp | Gas sensing element |
| JPS53141096A (en) * | 1977-05-16 | 1978-12-08 | Toshiba Corp | Gas sensing element |
| JPS55124058A (en) * | 1979-03-09 | 1980-09-24 | Gen Motors Corp | Titanium dioxide exhaust sensor |
| JPS5690250A (en) * | 1979-12-22 | 1981-07-22 | Matsushita Electric Works Ltd | Detection element of combustible gas |
| JPS5774648A (en) * | 1980-08-28 | 1982-05-10 | Siemens Ag | Selective thin film gas sensor and manufacture thereof |
| JPS5857702A (en) * | 1981-09-30 | 1983-04-06 | 三洋電機株式会社 | Moisture sensor |
| JPS58182545A (en) * | 1982-04-21 | 1983-10-25 | Hitachi Ltd | Carbon monoxide gas detection element |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4440572A1 (en) * | 1994-11-14 | 1996-05-15 | Fraunhofer Ges Forschung | Switchable coating structure |
| JP2007071866A (en) * | 2005-08-10 | 2007-03-22 | Tokyo Univ Of Science | Thin film for gas sensor, element body for gas sensor, and method for manufacturing element body for gas sensor |
| JP2011021911A (en) * | 2009-07-13 | 2011-02-03 | Ulvac Japan Ltd | Hydrogen gas sensor and method of manufacturing the same |
| JP2011203256A (en) * | 2010-03-25 | 2011-10-13 | Stichting Imec Nederland | Amorphous thin film for sensing |
| US10408779B2 (en) | 2016-03-25 | 2019-09-10 | Panasonic Intellectual Property Management Co., Ltd. | Gas sensor including metal oxide layer and hydrogen detection method using gas sensor |
| US10591432B2 (en) | 2016-03-25 | 2020-03-17 | Panasonic Intellectual Property Management Co., Ltd. | Hydrogen detection method using gas sensor having a metal oxide layer |
| WO2018123674A1 (en) * | 2016-12-28 | 2018-07-05 | パナソニックＩｐマネジメント株式会社 | Gas detection device, gas sensor system, fuel cell vehicle, and hydrogen detection method |
| WO2018123673A1 (en) * | 2016-12-28 | 2018-07-05 | パナソニックＩｐマネジメント株式会社 | Gas detection device, gas detection system, fuel cell vehicle, and gas detection method |
| JPWO2018123674A1 (en) * | 2016-12-28 | 2019-10-31 | パナソニックＩｐマネジメント株式会社 | Gas detection device, gas sensor system, fuel cell vehicle, and hydrogen detection method |
| JPWO2018123673A1 (en) * | 2016-12-28 | 2019-10-31 | パナソニックＩｐマネジメント株式会社 | Gas detection device, gas detection system, fuel cell vehicle, and gas detection method |
| JP2019200071A (en) * | 2018-05-14 | 2019-11-21 | キヤノン株式会社 | Reducing gas detection material, and reducing gas detection sensor |
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| JPH053539B2 (en) | 1993-01-18 |
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