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JPS6021051A - Lens projection and exposure method and its device - Google Patents

Lens projection and exposure method and its device

Info

Publication number
JPS6021051A
JPS6021051A JP58128399A JP12839983A JPS6021051A JP S6021051 A JPS6021051 A JP S6021051A JP 58128399 A JP58128399 A JP 58128399A JP 12839983 A JP12839983 A JP 12839983A JP S6021051 A JPS6021051 A JP S6021051A
Authority
JP
Japan
Prior art keywords
original
exposed
pattern
lens
projection lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58128399A
Other languages
Japanese (ja)
Other versions
JPH037138B2 (en
Inventor
Toshiyuki Horiuchi
敏行 堀内
Masanori Suzuki
雅則 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58128399A priority Critical patent/JPS6021051A/en
Publication of JPS6021051A publication Critical patent/JPS6021051A/en
Publication of JPH037138B2 publication Critical patent/JPH037138B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To enable an original pattern on an original pattern base projected on the material to be exposed to coincide with said material in the whole exposure region by detecting the relative position and the inclination angles of the original pattern base, the material to be exposed, and a lens for projecting a pattern unmagnified or contracted in a state attached to the device, and controlling them. CONSTITUTION:An original pattern base 28 is placed on its stage 29 controllable in the coordinate positions in the three rectangularly intersecting axes, and the rotation angles alpha, beta, theta around each axis. An original pattern 31 is focused on the material 33 to be exposed through an unmagnifying or contracting lens 32. The relative positions of the pattern 31 on the base 28 and a pattern 36 always formed on the material 33 can be detected with relative position detectors 34, 35.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は集積回路ノ’?タン形成に用いるレンズ投影露
光方法及び装置に関するものである。等倍投影絽光装置
と縮小投影露光装置があり、両者に適用可であるが、と
くに縮小投影露光装置に適用した場合有効である。
[Detailed Description of the Invention] [Technical Field of the Invention] Does the present invention relate to integrated circuits? The present invention relates to a lens projection exposure method and apparatus used for tan formation. There are a same-magnification projection exposure apparatus and a reduction projection exposure apparatus, and it is applicable to both, but it is particularly effective when applied to a reduction projection exposure apparatus.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来の方法、装置のうち、まず、原図基板を動かして被
露光物上の所望位置に該原図の等倍または縮小投影像を
露光する方法および装置の原理概念を第1図に示す。第
1図において、1は原図基板、2は感光剤を塗布した被
露光物、3は被露光物移動台、4は披露光物移動台位置
決め装置、5は位置決め指令回路、6は位1d検出器、
7は演算器、8は等倍まだは縮小投影レンズ、9は原図
基板移動台、10は原図基板移動台位置決め装置、11
は露光指令回路、12は露光光源である。
Among conventional methods and apparatuses, first, FIG. 1 shows the principle concept of a method and apparatus for moving an original substrate and exposing a same-sized or reduced projection image of the original onto a desired position on an object to be exposed. In Fig. 1, 1 is the original substrate, 2 is the exposed object coated with a photosensitive agent, 3 is the exposed object moving table, 4 is the exhibition object moving table positioning device, 5 is the positioning command circuit, and 6 is the position 1d detection. vessel,
7 is an arithmetic unit, 8 is an equal-magnification or reduction projection lens, 9 is an original substrate moving table, 10 is an original substrate moving table positioning device, 11
1 is an exposure command circuit, and 12 is an exposure light source.

従来の装置では列えは特公昭55−18043号公報、
特開昭54−96374%公報、特開昭55−1622
27号公報、米国特許USP 4.057.347明細
書等に示されるごとく、原図基板1の感光剤を塗布した
被露光物2への等倍または縮小投影露光装置を次のよう
に制御する。
In the conventional device, the arrangement is as described in Japanese Patent Publication No. 18043/1983.
JP-A-54-96374%, JP-A-55-1622
As shown in Publication No. 27, US Patent No. 4.057.347, etc., the exposure apparatus for projecting the original substrate 1 onto the exposed object 2 coated with the photosensitive agent at the same magnification or reduction is controlled as follows.

被露光物2を装着した被露光物移動台3を被露光物移動
台位置決め装置4に位置決め指令回路5から指令を与え
ることにょシ位置決めする。
The object moving stage 3 on which the object 2 to be exposed is attached is positioned by giving a command from the positioning command circuit 5 to the object moving stage positioning device 4.

位置検出器6によシ被露光物移動台3が実際に位置決め
された位置を検出し演算器7で、該実位14と位置決め
指令回路5からの指令目標値との差ΔXを算出、さらに
、等倍または縮小投影レンズ8の倍率にで前記差ΔXを
除して、原図基板1を装着した原図基板移動台9の位置
決め装置10にその演算結果を伝達する。原図基板移動
台位置決め装置1oは原図基板移動台9の位置決めを前
記演算結果に従って行なう。すなΔX わち−一だけ原図基板移動台9を動がし、被に 露光物2の位置誤差を補償する。
The position detector 6 detects the actual position of the exposed object moving table 3, and the calculator 7 calculates the difference ΔX between the actual position 14 and the command target value from the positioning command circuit 5. , the difference ΔX is divided by the magnification of the equal-magnification or reduction projection lens 8, and the calculation result is transmitted to the positioning device 10 of the original substrate moving table 9 on which the original substrate 1 is mounted. The original substrate moving table positioning device 1o positions the original substrate moving table 9 according to the calculation result. The original substrate moving table 9 is moved by ΔX, ie -1, to compensate for the positional error of the exposed object 2.

以上の説明では原理説明のため、位置決め誤差ΔXを一
次元的なものとして扱っているが、実際には、前記引回
の特公昭55−18043号公報、特開昭54−963
74号公報、特開昭55−162227号公報、米国特
許USP、(−、イフ57,347明π(0書等に示さ
れるように、直交x、y2方向の位置決め誤差ΔX、Δ
y、また場合によっては原図基板1と被露光物2の相対
回転による位置決め誤差Δθをも含めて、被露光物2の
位置誤差を補償する。
In the above explanation, the positioning error ΔX is treated as one-dimensional for the purpose of explaining the principle, but in reality, the positioning error ΔX is treated as one-dimensional.
No. 74, Japanese Unexamined Patent Publication No. 55-162227, US Pat.
y, and in some cases, positioning error Δθ due to relative rotation between the original substrate 1 and the object 2 to be exposed, to compensate for the positional error of the object 2 to be exposed.

原図基板移動台9が所望の位置に位置決めされると、原
図基板移動台位置決め装(<1oは、露光指令回路11
に位置決め終了のfM号を送シ、露光光源12のシャッ
タを開閉して被り光物2上の所望位置に]ぞターン原図
の等倍まだは細小投影像を露光する。
When the original substrate moving table 9 is positioned at the desired position, the original substrate moving table positioning device (<1o is the exposure command circuit 11
The fM signal indicating the end of positioning is sent, and the shutter of the exposure light source 12 is opened and closed to expose a small or equal size projection image of the turn original onto the desired position on the overlapping object 2.

かくのごとく、被露光物2への等倍まだt士縮小投影像
露光位置を原図基板1をその面内で動かして制御す不方
法および装置では、位置決め誤差を等倍または縮小投影
レンズ8の倍率にで除した量だけ制御すればよいので、
問えばせて位置決めする場合の10倍の制御fi7[が
?’)られる。ずなわち、列えば原図基板1を1. I
1m精度で動かせれば、被露光物2の0.1μmの位置
決め誤差を補償できる。
As described above, in the method and apparatus for controlling the exposure position of a reduced-scale projected image onto the object 2 by moving the original substrate 1 within its plane, the positioning error can be reduced by adjusting the positioning error of the reduced-scale projection lens 8. You only need to control the amount divided by the magnification, so
If you ask me, the control fi7 is 10 times that of positioning. ') can be done. That is, if you line up the original board 1 1. I
If it can be moved with an accuracy of 1 m, a positioning error of 0.1 μm of the object 2 to be exposed can be compensated for.

これに対し、原図基板を動かさずに被露光物を動かして
等倍または縮小投影露光位置を制御する方法、装置も従
来の技術として普遍している(特開昭57−15343
2号公報、特開昭55−134934号公報)。このタ
イプの従来技術の原理を第2図に示す。Xl軸だけにつ
いて示しであるが、Y、θの合わせがある場合も同様で
ある。
On the other hand, methods and devices for controlling the same-size or reduced projection exposure position by moving the exposed object without moving the original substrate are also widely used as conventional techniques (Japanese Patent Laid-Open No. 57-15343
No. 2, JP-A-55-134934). The principle of this type of prior art is shown in FIG. Although only the Xl axis is shown, the same applies to cases where Y and θ are aligned.

13は原図基板、14は位置検出器、15は位置決め指
令回路、16は位置決め装置、17は被′pイ光物、1
8は移動台、19は露光指令回路、20は露光光源、2
1は等倍または縮小投影レンズである。第2図において
、原図基板13は所定の位置に固定する。次に位置検出
器14からの位置情報に基き、位置決め指令回路15か
ら指令を発し、位置決め装置16によシ、該被露光物1
7の装着された移動台18を正確に位置決めする。この
のち、露光指令回路19から指令を発し、露光光源20
のシャッタを開閉し、等倍または縮小投影レンズ21を
通して被露光物17上の所望位置に原図基板13の等倍
または縮小投影像を露光する。
13 is an original board, 14 is a position detector, 15 is a positioning command circuit, 16 is a positioning device, 17 is an object to be illuminated, 1
8 is a moving table, 19 is an exposure command circuit, 20 is an exposure light source, 2
1 is an equal-magnification or reduction projection lens. In FIG. 2, the original substrate 13 is fixed in a predetermined position. Next, based on the position information from the position detector 14, a command is issued from the positioning command circuit 15, and the positioning device 16 moves the exposed object 1.
To accurately position a moving table 18 on which No. 7 is attached. After this, a command is issued from the exposure command circuit 19, and the exposure light source 20
The shutter is opened and closed to expose a projected image of the original substrate 13 to a desired position on the object 17 through the projection lens 21 .

かくのごとく、被露光物171IIllを勤がして、露
光位置を定める方法および装置では、原図基板13側に
微動機構を残しないので簡便となる利点を有する。
As described above, the method and apparatus for determining the exposure position by moving the object 171IIll to be exposed has the advantage of being simple because no fine movement mechanism is left on the original substrate 13 side.

しかしながら、いずれにしろ、前記に示した各種の従来
技術では原図基板1あるいは13と被露光物2あるいは
170寸法が理想な値となっている場合を想定しており
、各々につけた位置検出用のマークによシ、原図基板1
あるいは13と被露光物2あるいは17との相対的位置
決め誤差が一義的に定まり、これを正せば全体が重なる
ことを想定している。すなわち、例えば、第3図に示す
ように、原図基板1あるいは13の2ケ所A、Hに、ナ
印のマークを付けておき、被露光物2あるいは17の対
応する筒所A/、B/に十印のマークを付けておく時、
A、Bにおける÷マークの間隔L1およびA/ 、 B
lにおける+マークの間隔L/が理想的にkL=L’の
関係をみたし、AとA’、BとB′双方ともマークが等
倍または縮小投影レンズ8あるいは2ノを介して弁の中
央に十がくるように重ねられるケースを想定している。
However, in any case, in the various conventional techniques shown above, it is assumed that the dimensions of the original substrate 1 or 13 and the exposed object 2 or 170 are ideal values, and the Mark Yoshi, original drawing board 1
Alternatively, it is assumed that the relative positioning error between 13 and the exposed object 2 or 17 is uniquely determined, and if this is corrected, the entire object will overlap. That is, for example, as shown in FIG. 3, mark the two places A and H on the original substrate 1 or 13 with N marks, and then mark the corresponding positions A/, B/ on the exposed object 2 or 17. When marking a mark with a ten mark,
÷ mark spacing L1 and A/, B at A and B
The distance L/ between the + marks at l ideally satisfies the relationship kL=L', and both A and A' and B and B' are visible on the valve through the equal magnification or reduction projection lens 8 or 2. We are assuming a case where they are stacked so that the number 10 is in the center.

ところが実際には、 ■ 原図基板1あるいは13に形成される原図。However, in reality, ■ Original image An original image formed on the original substrate 1 or 13.

マーク間距離の寸法誤差、 ■ 等倍または縮小投影レンズ8あるいは2ノの焦点距
離2等倍または縮小投影レンズ8あるいは21と原図基
板1あるいは13との距離の誤差に基く倍率にの誤差、 ■ レンズの歪に基く等倍または縮小投影像の歪、 ■ 温度変化による原図基板1あるいは13゜被露光物
2あるいは12の膨張、収縮、■ 温度変化による等倍
または縮小投影レンズ8あるいは21と原図基板1ある
いは13との距離変化に基く倍率にの変動、 ■ 仮線光物2あるいは17が受ける露光以外の熱処理
、工、チング等の各種プロセスに基〈被露光物2あるい
は17の変形、 によシ、厳密にはkL=L’とならないのが普通である
。このため、例えばAとA′を位置決めすればBとB’
はX方向は位置決めし得るが、X方向には合致させるこ
とができなくなる。当然、A−A’ 、 B−B’以外
のノ臂タン箇所例えばc−c’等は、X方向もX方向も
ずれることになる。
Dimensional error in the distance between marks; ■ Error in magnification based on the error in the distance between the focal length of the equal magnification or reduction projection lens 8 or 21 and the original substrate 1 or 13; ■ Distortion of the same magnification or reduced projection image due to lens distortion, ■ Expansion or contraction of the original image substrate 1 or 13° and the exposed object 2 or 12 due to temperature changes; ■ Distortion of the original image with the original image magnified or reduced projection lens 8 or 21 due to temperature changes; Changes in magnification based on changes in distance from the substrate 1 or 13; ■ Deformation of the exposed object 2 or 17 based on various processes such as heat treatment, machining, and chiming other than exposure that the temporary beam object 2 or 17 undergoes; Strictly speaking, it is normal that kL=L' does not hold. Therefore, for example, if A and A' are positioned, B and B'
can be positioned in the X direction, but cannot be matched in the X direction. Naturally, the arm tongue locations other than A-A' and B-B', such as c-c', are shifted in both the X direction and the X direction.

前記■〜■の原因による原図基板1あるいは13と被露
光物2あるいは17との寸法誤差は、(kL−L’)す
なわち被露光物面寸法で通常0.5μm以下のオーダー
であるが、バタン線幅が1μm内外となシ、高精度な位
置合わ昼が必要な場合には位置合わせマーク点での位置
決め誤差よシずっと大きい値となり、いかに原図基板1
あるいは13、または被露光物2あるいは17を精密に
制御しても、原図基板1あるいは13の等倍または縮小
投影像の寸法が、被露光物2あるいは11の既形成パタ
ンの寸法と異なる限シ、両者を所望の関係に重ね合わせ
ることは不可能である。第4図にこの状況を示す。
The dimensional error between the original substrate 1 or 13 and the exposed object 2 or 17 due to the causes of (1) to (3) above is (kL-L'), that is, the surface dimension of the exposed object, and is usually on the order of 0.5 μm or less, but If the line width is around 1 μm and high precision positioning is required, the positioning error at the positioning mark point will be much larger.
Alternatively, even if the substrate 13 or the exposed object 2 or 17 is precisely controlled, as long as the dimensions of the original substrate 1 or 13 are different from the dimensions of the pre-formed pattern of the exposed object 2 or 11. , it is impossible to superimpose the two in the desired relationship. Figure 4 shows this situation.

〔発明の目的〕[Purpose of the invention]

本発明は以上のような不都合をなくすため、原図基板お
よび被露光物と等倍または縮小投影レンズとの相対位置
および傾き角を装置に装着した状態で検出して制御する
ことによシ、等倍または縮小投影像の形状1寸法を被露
光物の既形成/4’タンに合わせて変化させ、両者が位
置合わせマーク点における重ね合わせ精度で、露光領域
内の全域で合致し得るようにする方法および装置である
In order to eliminate the above-mentioned disadvantages, the present invention detects and controls the relative position and inclination angle between the original substrate and the object to be exposed and the same-magnification or reduced-magnification projection lens while it is attached to the apparatus. One dimension of the shape of the magnified or reduced projection image is changed according to the already formed/4' tongue of the exposed object so that both can match over the entire area within the exposure area with overlay accuracy at the alignment mark point. A method and apparatus.

〔発明の実施例〕[Embodiments of the invention]

以下、図面について詳細に説明する。 The drawings will be described in detail below.

第5回は本発明の原理説明のだめの図であシ、22は原
図基板、23は原図バタン、24は等倍または縮小投影
レンズ、25は被露光物、26は等倍または縮小投影像
、27は既形成バタンである。
The fifth drawing is a diagram for explaining the principle of the present invention, 22 is the original substrate, 23 is the original button, 24 is the same magnification or reduced projection lens, 25 is the object to be exposed, 26 is the same magnified or reduced projection image, 27 is a pre-formed baton.

原図基板22上の寸法りの原図ノ4タン23が等倍また
は縮小投影レンズ24を通して被露光物25上に寸法L
′で結像するとする。この等倍または縮小投影像26が
露光・ぞタンとなる。等倍または縮小投影レンズ24の
前後焦点を各々F++F2とし、レンズ24の主点0か
ら原図パタン23迄の距離を31等倍または縮小投影像
26迄の距離をb1焦点距離をfとすればの関係が成シ
立つ。kは倍率である。
An original image 23 of size L on the original image substrate 22 is projected onto the exposed object 25 through the same magnification or reduction projection lens 24.
Suppose that the image is formed at ′. This same size or reduced projection image 26 becomes the exposure image. If the front and rear focal points of the equal-magnification or reduction projection lens 24 are respectively F++F2, the distance from the principal point 0 of the lens 24 to the original pattern 23 is 31, the distance to the equal-magnification or reduction projection image 26 is b1, and the focal length is f. A relationship is established. k is a magnification.

等倍または縮小投影像26を重ねて露光すべき被露光物
25の既形成パタン27ど比較する時、既形成パタン2
7の寸法L//は本来L // −L/となるべきもの
であるが、前記原因によシ、一般にL// == Lt
とはならない。本発明は、前記の距Maおよびbを適当
な値に制御することによシ、等倍または縮小投影像26
の寸法1./を変え、既形成ノ4タンの寸法L“に合致
させる。すなわちL“=L′の本来溝たされるべき条件
を満たすようにしたものである。
When comparing the already formed pattern 27 of the object 25 to be exposed by superimposing the same size or reduced projection image 26, the already formed pattern 2
The dimension L// of 7 should originally be L // -L/, but due to the above reasons, it is generally L// == Lt
It is not. The present invention provides a projection image 26 of equal size or reduced size by controlling the distances Ma and b to appropriate values.
Dimensions 1. / is changed to match the dimension L" of the pre-formed tongue. In other words, the condition that L"=L', which should originally be a groove, is satisfied.

式(1) 、 (2)において、等倍まだは縮小投影レ
ンズ24に固有の値は焦点距離fだけであシ、距ti7
I mおよびbは、式(1)を満たす関係にしさえすれ
ば、像を形成する上での支障はない。
In equations (1) and (2), the only value specific to the reduction projection lens 24 is the focal length f, and the distance ti7
As long as I m and b satisfy the equation (1), there will be no problem in forming an image.

そこで、L’=L“とするには、(2)よシとし、(1
)に代入 とすれば艮い。
Therefore, in order to set L'=L", (2) should be changed and (1
).

仮に、L’=L“十ΔL 、ΔL)0 とすれば、縮小
投影像26を寸法L′で結像させる時に等倍または縮小
投影レンズ24を置くべき位置である。
If L'=L"+ΔL,ΔL)0, this is the position where the equal-magnification or reduction projection lens 24 should be placed when forming the reduced projection image 26 with the dimension L'.

したがって、等倍または縮小投影像26の寸法L′が、
重ね露光すべき被露光物25上の既形成ノ4タン27の
寸法L“よシ大きい時は、原図基板22の位置を等倍ま
たは縮小投影レンズ24からやや遠ざけ、対応する所定
の距離・だけ、被露光物25を等倍または縮小投影レン
ズ24に近付ければよ<、L<L“の場合には、逆の移
動を行なえばよい。
Therefore, the dimension L' of the same size or reduced projection image 26 is
If the dimension L of the pre-formed button 27 on the object 25 to be exposed is larger than that, move the original substrate 22 a little further away from the same magnification or reduction projection lens 24 by a corresponding predetermined distance. , the object 25 to be exposed should be moved closer to the same magnification or reduction projection lens 24. If L<L", the opposite movement may be performed.

ゆえに、例えば、前記の■、■、■、■等の原因によシ
、第6図に示すように、等倍または縮小投影像26と既
形成ノ4タン27が、相似形をなして、寸法が異なる場
合には、前記の原理をそのまま適用して、原図基板22
、等倍または縮小投影レンズ24、被露光物25の間隔
を該等倍または縮小投影像26と既形成パタン27が合
致するように変えればよい。
Therefore, for example, due to the reasons mentioned above, as shown in FIG. If the dimensions are different, the above principle can be applied as is to change the original board 22.
, the distance between the equal-magnification or reduced projection lens 24 and the exposed object 25 may be changed so that the equal-magnified or reduced projection image 26 and the preformed pattern 27 match.

まだ、例えば前記の■、■等の原因によシ、第7図に示
すように等倍または縮小投影像26に対し、既形成パタ
ン27の形状が歪んでいる場合には、原図基板22と等
倍または縮小投影レンズ24の距離を場所に応じて変え
て、相対的に傾け、披露光物25も追随して傾ければよ
い。第7図の場合、原図パタン23の等倍または縮小投
影像26の辺PQに相当する側を等倍または縮小投影レ
ンズ24から遠ざけ、被露光物25の辺l) Q側を対
応する距離だけ縮小レンズ24に近付ければよい。
However, if the shape of the pre-formed pattern 27 is distorted with respect to the same size or reduced projection image 26 as shown in FIG. The distance of the equal-magnification or reduction projection lens 24 may be changed depending on the location, and the projection lens 24 may be tilted relatively, and the exhibition light object 25 may be tilted accordingly. In the case of FIG. 7, move the side corresponding to the side PQ of the same-size or reduced-scale projection image 26 of the original pattern 23 away from the same-sized or reduced-scale projection lens 24, and move the side 1) of the exposed object 25 by a corresponding distance. It is only necessary to bring it closer to the reduction lens 24.

第7図のごとく歪が一方向だけでなく、第8図のととく
2方向に生じている場合も同様であり、原図基板22お
よび被露光物25の等倍または縮小投影レンズ24に対
する直交2方向の相対傾き角を制御すれば良い。
The same is true when the distortion occurs not only in one direction as shown in FIG. 7, but also in two directions as shown in FIG. What is necessary is to control the relative inclination angle of the direction.

原図基板22、等倍または縮小投影レンズ24、披露光
物25の相対的位置および傾き角を変えるにはこれらの
うち、いずれか2つ以上の位置および傾き角が変わるよ
うにすればよい。
In order to change the relative positions and inclination angles of the original image substrate 22, the same-magnification or reduction projection lens 24, and the exhibition object 25, the positions and inclination angles of any two or more of these may be changed.

また、元々前記原因■〜■に示すように、斐えるべく距
離および傾き角はほんのわずかであシ、等倍または縮小
投影レンズ24の焦点深度の範囲ならば、被露光物25
の位置及び傾き角は変える必要がなくなる。原図基板2
2か等倍または縮小投影レンズ24の位置及び頑き角を
可変とし、他方を固定とする場合、前記の理由から、被
露光物25を等倍または縮小投影レンズ24に対して常
に一定の位置を保;)機種をイ・」与するだけでも本発
明は効果を有する。
In addition, as originally shown in the causes ① to ① above, the distance and inclination angle should be very small, and if the depth of focus of the equal-magnification or reduction projection lens 24 is within the range of the focal depth of the exposed object 25.
There is no need to change the position and inclination angle of. Original board 2
When the position and stiffness angle of one of the two equal-magnification or reduction projection lenses 24 are variable and the other is fixed, the object 25 to be exposed must always be placed at a constant position with respect to the equal-magnification or reduction projection lens 24 for the above-mentioned reasons. The present invention is effective even if the model is maintained;

第9図は本発明の実施例であり、28は原図基板、29
は原図基板ステージ、30は主光線束、31は原図ノぐ
タン、32は等倍または縮小投影レンズ、33は被露光
物、34.35は相対位置検出装置、36は既形成・や
タン、37〜44は反射鏡、49は被露光物ステージ、
50は移動ステージ、5ノは演算器、52は原図基板ス
テージ駆動回路、53は被露光物ステージ駆動回路、5
4は露光指令回路、55は露光光源である。
FIG. 9 shows an embodiment of the present invention, 28 is an original board, 29
30 is an original substrate stage, 30 is a chief ray bundle, 31 is an original pattern, 32 is an equal-magnification or reduction projection lens, 33 is an object to be exposed, 34, 35 is a relative position detection device, 36 is a pre-formed lens, 37 to 44 are reflecting mirrors, 49 is an exposed object stage,
50 is a moving stage, 5 is a computing unit, 52 is an original substrate stage drive circuit, 53 is an exposed object stage drive circuit, 5
4 is an exposure command circuit, and 55 is an exposure light source.

原図基板28を直交3軸x、y、z方向位置座標および
各軸まわシの回転角α、β、θを調整可能な原図基板ス
テージ29に搭載する。X。
The original substrate 28 is mounted on an original substrate stage 29 that can adjust the position coordinates in the x, y, and z directions of three orthogonal axes and the rotation angles α, β, and θ of each axis. X.

Y、zおよびα、β、θのとり方については、図のごと
く主光線束30が垂直の場合の他、水平の場合や、途中
に反射鏡が設置され、光路の方向が変わる場合があるの
で、主光線束30が入射してくる方向を2とする。
Regarding how to take Y, z, α, β, and θ, there are cases where the principal ray bundle 30 is vertical as shown in the figure, horizontal cases, and cases where a reflecting mirror is installed in the middle and the direction of the optical path changes. , the direction in which the principal ray bundle 30 is incident is assumed to be 2.

原図基板28上の原図ノ4メン3ノは等倍または縮小投
影レンズ32によシ、被露光物33上に結像する。
Four and three original images on the original image substrate 28 are imaged onto an object to be exposed 33 by a same-magnification or reduction projection lens 32 .

相対位置検出装置34および35によシ、原図基板28
上の原図ノ4タン31と被露光物33上の既形成パタン
36との相対位置関係を検出する。相対位置関係を検出
するには、原図基板28および被露光物33上の重なシ
あうべき対応する各位置に検出用のマークを設けておけ
ばよい。各マークを光電的あるいはレーザ干渉計等によ
シ位置検出することにより、相対位置関係がまる。また
、撮像管とテレビジョン受像機の組合せや顕微鏡等によ
シ重なるべきマークや各/4’タン3ノおよび36その
ものを観察あるいはずれ計測してもよい。
Due to the relative position detection devices 34 and 35, the original board 28
The relative positional relationship between the upper original pattern 4 tongue 31 and the already formed pattern 36 on the object 33 to be exposed is detected. In order to detect the relative positional relationship, detection marks may be provided at corresponding positions on the original substrate 28 and the exposed object 33 that should overlap. By detecting the position of each mark using a photoelectric or laser interferometer, the relative positional relationship is established. Alternatively, the marks to be overlapped and the /4' tongues 3 and 36 themselves may be observed or their deviations may be measured using a combination of an image pickup tube and a television receiver, a microscope, or the like.

なお第9図に示した反射鏡37〜44は、わかシやすく
光路を描くため入れたもので特段の意味を有しない。一
方、原図A?メタン1と既形成バタン36との相対位置
関係の検出方式については、第9図のごとく、両者を別
々に検出せず、第1O図に示すように等倍または縮小投
影レンズ32を通して、同時に検出してもよい。
Incidentally, the reflecting mirrors 37 to 44 shown in FIG. 9 are inserted to clearly draw the optical path and have no particular meaning. On the other hand, original drawing A? Regarding the method of detecting the relative positional relationship between the methane 1 and the pre-formed button 36, as shown in Fig. 9, they are not detected separately, but are detected simultaneously through the same-magnification or reduction projection lens 32 as shown in Fig. 1O. You may.

第10図の場合も反射m4s*4eは便宜的に示したも
ので、破線で示したごとく47.48の反射鏡を使う光
路を用いるなどしてもよく、等倍または縮小投影レンズ
32を通していわゆるTTL方式(Through T
he Lenss方式)で検出する場合に適用できるこ
とを示すものである。
In the case of FIG. 10, the reflection m4s*4e is also shown for convenience, and as shown by the broken line, an optical path using a 47.48 reflector may be used, and the so-called so-called TTL method (Through T
This shows that the method can be applied to detection using the he Lenss method).

原図/?メタン1と既形成バタン36の対応寸法の差を
知るには、最低2ケ所で相対位置関係を検出することが
必要であり、例えば、第11図に示すようにチップ内に
設けた士印で示す2カ所の相対応する位置を比較する。
Original drawing/? In order to know the difference in the corresponding dimensions between the methane 1 and the pre-formed button 36, it is necessary to detect the relative positional relationship at at least two places. For example, as shown in FIG. Compare the two corresponding positions shown.

一方、X。On the other hand, X.

Y方向の寸法差およびパターン形状の歪を検出するには
、程度に応じて、例えば第12図〜第14図に示すよう
に3力所以上の点で相対位1置を検出することが必要で
ある。いずれも十印が相対位1δの検出箇所であシ検出
箇所数に応じて相対位置検出装置をふやす。
In order to detect the dimensional difference in the Y direction and the distortion of the pattern shape, it is necessary to detect one relative position at three or more points, depending on the degree, for example, as shown in Figures 12 to 14. It is. In both cases, the 10 marks are detection points with a relative position of 1.delta., and the number of relative position detection devices is increased according to the number of detection points.

披露光物33は、被露光物ステージ49上に搭載し、主
光線束の方向2および2に垂直な2軸X、Yまわりの回
転α、βが調整できるようにする。
The exposure object 33 is mounted on an exposure object stage 49 so that the rotations α and β around two axes X and Y perpendicular to the directions 2 and 2 of the principal ray bundle can be adjusted.

等倍または縮小投影レンズ32の焦点深度は縮小倍率と
開口数によってほぼ決まるが、現在使用されている最も
厳しい条件の装置で縮小倍率−、開口数0.35の場合
、±1μm〜±2μm0 程度であシ、他はこれよシ大きい。
The depth of focus of the same magnification or reduction projection lens 32 is approximately determined by the reduction magnification and the numerical aperture, but in the case of the reduction magnification - and the numerical aperture 0.35 in the equipment under the most severe conditions currently used, it is approximately ±1 μm to ±2 μm0. Well, everything else is bigger than this.

一方、この場合、原図基板28とレンズ32の間の距離
を例えば500 mmとすれば、10mm大の縮小投影
像の寸法をo、1μm増減するために動かすべき原図基
板28の微動縫は、第5図から容易にわかるようにおお
よそ となる。
On the other hand, in this case, if the distance between the original drawing board 28 and the lens 32 is, for example, 500 mm, the fine movement stitch of the original drawing board 28 that needs to be moved in order to increase or decrease the size of the reduced projection image of 10 mm size by o, 1 μm is as follows. As can be easily seen from Figure 5, it is approximately.

これに対檗、結像位置の2方向移動量は計算によると、
約 5μmX(縮小倍率)2=5μmX(−!−)2=o、
osμm0 である。
According to calculations, the amount of movement in two directions of the beam position and the imaging position is as follows.
Approximately 5μmX (reduction magnification)2=5μmX(-!-)2=o,
osμm0.

よって、寸法加減鷲が±2〜3μJ度であれば、結像位
置の変化量は焦点深度内に入る。
Therefore, if the size adjustment is within ±2 to 3 μJ degrees, the amount of change in the imaging position will fall within the depth of focus.

このような場合は、被露光物ステージ49の調整機構は
被露光物33の表面が、等倍または縮小投影レンズ32
に対して一定位置になるよう保つだけの機能を有してい
さえすればよく、2、α、βの調整機構でなくてもよい
In such a case, the adjustment mechanism of the exposed object stage 49 is such that the surface of the exposed object 33 is
It only needs to have a function to maintain the position at a constant position with respect to the 2, α, and β adjustment mechanisms.

なお、被露光物33の複数の箇所に投影露光を要する場
合には、被露光物ステージ49をステップ&レピートさ
せるため、被露光物移動ステージ50に搭載する。移動
ステージ5oには最低X、Yの位16決め機能を例与す
る。
In addition, when projection exposure is required at a plurality of locations on the exposed object 33, the exposed object stage 49 is mounted on the exposed object moving stage 50 in order to step and repeat. The moving stage 5o is provided with a minimum X and Y positioning function of 16.

該移動ステージ50によシ、披露光物33をおおむね所
定の露光位1dに移動した後、相対位置検出装置34お
よび35にょシ原図バタン3ノと、既形成パタン36の
相対位置関係を調べる。演算器51は、両者の位置すれ
と、寸法の相違を各々計算し、原図基板ステージ駆動回
路52に位置ずれ補償のためのx、y、θに関する調整
指令と、寸法および歪補償のだめの2゜α、βに関する
調整指令を、また被露光物ステージ駆動回路53には寸
法、歪補償に伴なう結像位置調整のためのZ、α、βに
関する駆動指令を発する。
After the unveiling object 33 is moved to approximately a predetermined exposure position 1d by the moving stage 50, the relative positional relationship between the original pattern button 3 and the preformed pattern 36 is checked. The arithmetic unit 51 calculates the positional misalignment and dimensional difference between the two, and sends adjustment commands for x, y, and θ to the original substrate stage drive circuit 52 to compensate for the misalignment, and 2° for the dimension and distortion compensation. Adjustment commands regarding α and β are issued, and drive commands regarding Z, α, and β are issued to the exposed object stage drive circuit 53 for adjusting the imaging position in accordance with dimension and distortion compensation.

原図橋板ステージ駆動回路52および被露光物ステージ
駆動回路53は各々原図基板ステージ29および破3”
A光物ステージ49を駆動し、寸法および歪補償を含め
た既形成バタン36と原図バタン31との位置合わせを
行なう。
The original board stage drive circuit 52 and the exposed object stage drive circuit 53 are connected to the original board stage 29 and the board stage 3'', respectively.
The A optical object stage 49 is driven to align the pre-formed button 36 and the original button 31, including dimension and distortion compensation.

位置合わせ後、再び相対位置検出装置ffl: 3 r
eおよび35によシ、両者の相対位11−を間係を検出
し、各位置検出点における位置ずれが許容値以下になる
迄、前記の位置合わせ動作を繰り返すフィードバック方
式をとれば、より一層精度良く、既形成ノ4タン36と
原図・ぐタン31を対応させることができる。
After alignment, use the relative position detection device ffl: 3 r again
e and 35, the relative position 11- of both can be detected, and the above positioning operation can be repeated until the positional deviation at each position detection point is below the allowable value. The pre-formed tongue 36 and the original tongue 31 can be matched with high accuracy.

位[べ合わせ完了後、演算器51Jニジ、!イ光指令回
路54に信号を送シ、露光光源55のシャッタを開閉し
て露光する。
[After completing the matching, arithmetic unit 51J, ! A signal is sent to the light command circuit 54, and the shutter of the exposure light source 55 is opened and closed for exposure.

前記の説明中、相対位置検出装置34および35からの
情報により、演算器51で゛位置すれと寸法、形状の誤
差とを分離演算を行なうには、レリえは次のように行な
う。第15図は、第11図のごとく2カ所にマークを設
けた場合の位置ずれ1寸法、形状誤差、算出の説明図で
ある。
In the above description, in order to perform calculations for separating misalignment and size and shape errors using the calculator 51 based on the information from the relative position detecting devices 34 and 35, the relative calculation is performed as follows. FIG. 15 is an explanatory diagram of one dimension of positional deviation, shape error, and calculation when marks are provided at two locations as shown in FIG. 11.

被露光物33上の既形成バタン36に原図・ぐタン31
の縮小投影像を重ねた場合を想定し、56.57は既形
成バタンマーク、58 、59は原図i9タンマークと
する。A、B2ケ所における既形成ノ4タンマーク56
.57に対する原図/ヤタンマーク5FJ、59のX、
Y方向のスレを各々ΔXA、ΔYA、ΔXB、ΔYBと
する。マークの間隔をtとすれば、X方向の寸法の相違
Δ1Xは ΔtX−ΔXA−ΔXB 位置ずれは、 X方向が ΔX=7(ΔXA十ΔXB)Y方向が ΔY
=−(lYA+ΔYB)θ方向が Δθ=ず(ΔYA−
ΔYB)となる。
The original pattern 31 is attached to the already formed button 36 on the exposed object 33.
Assuming a case where the reduced projection images of are superimposed, 56 and 57 are already formed button marks, and 58 and 59 are original image i9 button marks. Pre-formed 4 tongue marks 56 at 2 locations A and B
.. Original drawing for 57/Yatan mark 5FJ, X of 59,
Let the threads in the Y direction be ΔXA, ΔYA, ΔXB, and ΔYB, respectively. If the interval between marks is t, the difference in dimension Δ1X in the X direction is ΔtX - ΔXA - ΔXB The positional deviation in the X direction is ΔX = 7 (ΔXA + ΔXB) ΔY in the Y direction
=-(lYA+ΔYB)θ direction is Δθ=zu(ΔYA-
ΔYB).

寸法の誤差が、x、X方向同一で、露光領域内で均一と
すれば前記Δtxの値に基いて、寸法補償を行なえばよ
い。
If the dimensional error is the same in the x and x directions and is uniform within the exposure area, dimensional compensation may be performed based on the value of Δtx.

また、x、X方向または露光領域内で寸法の誤差が変わ
る場合には、例えば第12図〜第14図のごときマーク
配置によシ、各マーク間での位置ずれ分布を調べること
により、重ね合わせ誤差が最小となるよう、寸法および
歪の補償を行なえばよいことは自明である。
In addition, if the dimensional error changes in the x, It is obvious that the dimensions and distortions may be compensated so that the alignment error is minimized.

さらに、第9図では前記のごとく原図基板ステージ29
と被露光物ステージ49に51モ動系を配分したが第5
図の説明において既述したように、原図基板282等倍
または縮小投影レンズ32、被露光物33相互の距離関
係調整ができるよう駆動系をこれら3者に配分すればよ
いことは明らかである。
Furthermore, in FIG. 9, as mentioned above, the original substrate stage 29
51 motion system was allocated to the exposed object stage 49, but the fifth
As already mentioned in the explanation of the figures, it is clear that the drive system can be allocated to these three so that the distance relationship between the original substrate 282, the same-magnification or reduction projection lens 32, and the object 33 to be exposed can be adjusted.

また、相対位置検出装置34.35を設けるかわシに、
被露光物33と同一性状のザンデルを試しに露光゛して
、感光剤に形成される原図バタン31と既形成バタン3
6を顕微鏡等で観察し、寸法の相違を検出しても、本発
明は適用可能である。
In addition, the relative position detection device 34.35 is provided,
An original pattern 31 and a pre-formed pattern 3 are formed on the photosensitive agent by trially exposing a sander having the same properties as the object 33 to be exposed.
The present invention is also applicable even if a difference in size is detected by observing 6 with a microscope or the like.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、レンズ投影露光
において、被露光物上の既形成バタンと露光する原図ツ
クタンの位置合わせと同時に、両者の寸法の相違および
形状歪を補償するととができるので、露光領域内全体を
見る時の既形成バタンと露光原図パタンの重ね合わせ精
度を向上させることができる。
As explained above, according to the present invention, in lens projection exposure, it is possible to align the already formed button on the object to be exposed and the original pattern to be exposed, and at the same time compensate for the difference in size and shape distortion between the two. Therefore, it is possible to improve the overlay accuracy of the already formed button and the exposure original pattern when viewing the entire exposure area.

したがって、■集積回路作成時の各層の原図基板寸法誤
差や、同層における多数のワーキング原図基板間の寸法
ばらつきを補償できるほか、■ニブ易等において多数の
露光装置を併用する場合の互換性を大幅に向上させるこ
とができる。
Therefore, ■ it is possible to compensate for the dimensional errors of the original board of each layer during integrated circuit creation and the dimensional variations between many working original boards in the same layer, and ■ it is possible to improve compatibility when using multiple exposure devices together in nib-reading, etc. can be significantly improved.

■別種の露光装置たとえば電子ビーム露光装置、X線露
光装置、反射投影光露光装置、密着型光露光装置等と併
用した集積回路作成プロセスいわゆるハイブリッド露光
に適用できる。
(2) It can be applied to a so-called hybrid exposure process, which is a process for producing an integrated circuit using a different type of exposure device, such as an electron beam exposure device, an X-ray exposure device, a reflection projection light exposure device, a contact type light exposure device, etc.

■ 温度変化に基く、原図基板や被露光物の寸法変化に
対応できる。
■ Can respond to changes in dimensions of the original substrate and exposed object due to temperature changes.

■ 装置の温度制御を厳しくしなくても、投影倍率を所
定の値にいつでも調整できる。
■ The projection magnification can be adjusted to a predetermined value at any time without strict temperature control of the device.

■ 熱処理やエツチング等によシ、被露光物が変形し寸
法が変化しても対応可能である。
■ Can be used even if the exposed object is deformed and its dimensions change due to heat treatment, etching, etc.

等、数々の利点がある。There are many advantages such as.

このため、従来と露光・臂タンの解像性が同じ投影レン
ズや露光光学系を用いても、果慎uum設計の重ね合わ
せマージンを小さくすることができるため、集積度およ
び製品歩留シを大幅に上げることが可能である。
Therefore, even if a projection lens or exposure optical system with the same resolution of exposure and armpits as the conventional one is used, the overlay margin of the Kashin Uum design can be reduced, which reduces the degree of integration and product yield. It is possible to increase it significantly.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のレンズ投影露光方式の概念図、第2図は
別の従来のレンズ投影露光方式の概念図、 第3図は原図基板と被露光物の重ね合わせに関する説明
図、 第4図は原図基板と被露光物重ね合わせ不oJ能の状態
図、 第5図は本発明の原理説明図、 第6図〜第8図はそれぞれ原図基板゛投影像と既形成バ
タンとの寸法差、形状歪を示す説明図、第9図は本発明
の実施例の概念図、 第10図は原図バタンと既形成・ぐタンとの相対位置検
出方式の別の実施クリの概念図、第11図〜第14図は
それぞれ・平タン寸法差。 形状歪を検出するだめの検出位置のし11を示す説開国
、 第15図は位置ずれ1寸法、形状誤差算出の説明間であ
る。 1・・・原図基板、2・・・被露光物、3・・・被露光
物移動台、4・・・被「光物移動台位置決め装置、5・
・・位置決め指令回路、6・・・位置検出器、7・・・
演算器、8・・・等倍または縮小投影レンズ、9・・・
原図基板移動台、10・・・原図基板移動台位置決め装
置、11・・・露光指令回路、12・・・露光光源、1
3・・・原図基板、14・・・位置検出器、15・・・
位置決め指令回路、16・・・位置決め装置、17・・
・被露光物、18・・・移動台、19・・・露光指令回
路、20・・・k6光光源、21・・・等倍または縮小
投影レンズ、22・・・原図基板、23・・・原図ノ9
タン、24・・・等倍または縮小投影レンズ、25・・
・被露光物、26・・・等倍まだは縮小投影像、27・
・・既形成ノ母タン、28・・・原図基板、29・・・
原図基板ステージ、30・・・主光線束、31・・・原
図バタン、32・・・等倍または縮小投影レンズ、33
・・・被露光物、34.35・・・相対位置検出装置、
36゜・・既形成ノやタン、32〜48・・・反射鏡、
49・・・被露光物ステージ、50・・・移動ステージ
、5ノ・・・演算器、52・・・原図基板ステージ駆動
回路、53・・・被露光物ステージ駆動回路、54・・
・露光指令回路、55・・・露光光源、56.57・・
・既形成ノ寄タンマーク、58.59・・・原図・ヤタ
ンマーク。 出願人代理人 弁理士 鈴 江 武 該第1図 第2図 第3図 第t、’rjA 第5図 第9図 55 第10図 第11図 電12 IF 51.17:lゴ36 第13図 第14図
Fig. 1 is a conceptual diagram of a conventional lens projection exposure method, Fig. 2 is a conceptual diagram of another conventional lens projection exposure method, Fig. 3 is an explanatory diagram of overlapping the original substrate and the exposed object, and Fig. 4 5 is a diagram explaining the principle of the present invention, and FIGS. 6 to 8 are diagrams showing the dimensional difference between the original substrate, the projected image, and the already formed button, respectively. An explanatory diagram showing shape distortion, Fig. 9 is a conceptual diagram of an embodiment of the present invention, Fig. 10 is a conceptual diagram of another embodiment of the method of detecting the relative position between the original slam and the already formed button, and Fig. 11 ~Figure 14 shows the difference in flat tongue dimensions. Figure 15 is a diagram showing the detection position mark 11 for detecting shape distortion, and Fig. 15 is an explanation of one dimension of positional deviation and shape error calculation. DESCRIPTION OF SYMBOLS 1... Original board, 2... Object to be exposed, 3... Object moving table, 4... Optical object moving table positioning device, 5.
...Positioning command circuit, 6...Position detector, 7...
Arithmetic unit, 8... Equal magnification or reduction projection lens, 9...
Original substrate moving table, 10... Original substrate moving table positioning device, 11... Exposure command circuit, 12... Exposure light source, 1
3... Original board, 14... Position detector, 15...
Positioning command circuit, 16... Positioning device, 17...
・Object to be exposed, 18... Moving table, 19... Exposure command circuit, 20... K6 light source, 21... Equal magnification or reduction projection lens, 22... Original image board, 23... Original drawing no. 9
Tan, 24... Equal magnification or reduction projection lens, 25...
・Exposed object, 26... Same size or reduced projection image, 27.
...Pre-formed mother tongue, 28...Original drawing board, 29...
Original drawing substrate stage, 30... Chief ray bundle, 31... Original drawing button, 32... Equal magnification or reduction projection lens, 33
...Exposed object, 34.35...Relative position detection device,
36°...pre-formed tongue and tongue, 32-48...reflector,
49...Exposed object stage, 50...Movement stage, 5...Arithmetic unit, 52...Original substrate stage drive circuit, 53...Exposed object stage drive circuit, 54...
・Exposure command circuit, 55...Exposure light source, 56.57...
・Pre-formed tanning mark, 58.59...Original drawing/yatan mark. Applicant's agent Patent attorney Takeshi Suzue Figure 1 Figure 2 Figure 3 t, 'rjA Figure 5 Figure 9 55 Figure 10 Figure 11 Den 12 IF 51.17: lgo 36 Figure 13 Figure 14

Claims (6)

【特許請求の範囲】[Claims] (1)原図基板上のノ9タンを投影レンズを介して、感
光剤を塗布した被露光物上に露光、転写する方法におい
て、原図基板上の原図パタンと被露光物上の既形成ノ9
タンとの対応寸法の相違。 パタンの相対形状歪を検出し、該検出結果に基いて、原
図基板、投影レンズ、被露光物間の相互間隔、相対傾斜
角を調整して、該原図ノ臂タンの投影露光像を対応する
被露光物上の既形成ノ4タンに所期の関係で、重なシ得
る寸法、形状に補正し、然る後に、原図基板と被露光物
とのノ9タン園内における位置合わせを行なって、原図
バタンと被d光物上の既形成/4’タンを投影レンズを
介して重ね合わせ、該原図バタンを露光。 転写することを特徴とするレンズ投影露光方法。
(1) In a method in which the pattern on the original substrate is exposed and transferred through a projection lens onto an exposed object coated with a photosensitive agent, the original pattern on the original substrate and the already formed pattern on the exposed object are transferred.
Difference in corresponding dimensions from tongue. The relative shape distortion of the pattern is detected, and based on the detection result, the mutual spacing and relative inclination angle between the original substrate, the projection lens, and the exposed object are adjusted to correspond to the projection exposure image of the arm tongue of the original pattern. The dimensions and shape are corrected so that they overlap with the pre-formed holes on the object to be exposed in the desired relationship, and then the original substrate and the object to be exposed are aligned within the hole. , The original pattern button and the pre-formed/4' tongue on the object to be illuminated are superimposed via a projection lens, and the original pattern pattern is exposed. A lens projection exposure method characterized by transferring.
(2)原図基板上のノ9タンを投影レンズを介して感光
剤を塗布した被露光物上に露光、転写する装置において
、該原図基板上の原図i4タンと被露光物上の既形成バ
タンとの相対的重ね合わせを行なうための位置合わせ機
構に加え、該原図基板、投影レンズ、被露光物間の相互
間隔。 相対傾斜角を調整して、該原図バタンの投影露光像を対
応する被露光物上の既形成パタンに所期の関係で重なシ
得る寸法、形状に補正する機構を設けたことを特徴とす
るレンズ投影露光装置。
(2) In a device that exposes and transfers the No9tan on the original substrate through a projection lens onto an exposed object coated with a photosensitive agent, the original I4tan on the original substrate and the already formed button on the exposed object are used. In addition to the alignment mechanism for relative overlay with the original substrate, the projection lens, and the mutual spacing between the exposed object. The apparatus is characterized by being provided with a mechanism that adjusts the relative inclination angle to correct the projected exposure image of the original pattern to a size and shape that allows it to overlap the already formed pattern on the corresponding exposure object in a desired relationship. Lens projection exposure equipment.
(3)原図バタンと被露光物上の既形成バタンとの対応
寸法の相違、相対形状歪を、原図基板および被露光物を
装置に装着した状態で検出できるようにするための相対
位置検出装置を設けたことを特徴とする特許請求の範囲
第2項記載のレンズ投影露光装置。
(3) Relative position detection device for detecting the difference in corresponding dimensions and relative shape distortion between the original pattern board and the pre-formed pattern on the exposed object with the original pattern board and the exposed object mounted on the device. A lens projection exposure apparatus according to claim 2, further comprising: a lens projection exposure apparatus according to claim 2;
(4)原図基板、投影レンズ、被露光物間の相互間隔、
相対傾斜角を調整するため、投影レンズを固定し、原図
基板および被露光物の位置。 傾斜角を調整、制御可能としたことを特徴とする特許請
求の範囲第2項記載のレンズ投影露光装置。
(4) Mutual spacing between the original substrate, the projection lens, and the exposed object;
To adjust the relative tilt angle, fix the projection lens and adjust the position of the original substrate and the exposed object. 3. A lens projection exposure apparatus according to claim 2, wherein the inclination angle can be adjusted and controlled.
(5)原図・ぐタンと被露光物上の既形成バタンとの対
応寸法の相違、相対形状歪を原図基板および被露光物を
装置に装着した状態で検出する相対位置検出装置と、原
図基板、破露光物各々に、投影レンズとの間隔を調整す
る装置を設け、かつ原図基板に投影レンズに対する傾斜
角を調整する装置を設けたことを特徴とする特許請求の
範囲第2項記載のレンズ投影露光装置。
(5) A relative position detection device that detects the difference in corresponding dimensions and relative shape distortion between the original pattern/button and the pre-formed button on the exposed object when the original pattern substrate and the exposed object are attached to the device, and the original substrate. , a lens according to claim 2, characterized in that each of the exposure objects is provided with a device for adjusting the distance from the projection lens, and the original substrate is provided with a device for adjusting the inclination angle with respect to the projection lens. Projection exposure equipment.
(6)原図・9タンと被露光物上の既形成バタンとの対
応寸法の相違、相対形状歪を原図基板および被露光物を
装置に装着した状態で検出する相対位置検出装置と、原
図基板、被露光物各々に、投影レンズとの間隔、投影レ
ンズに対する傾斜角を調整する装置を設けたことを特徴
とする特許請求の範囲第2項記載のレンズ投影露光装置
(6) A relative position detection device that detects the difference in corresponding dimensions and relative shape distortion between the original pattern/9 tongue and the pre-formed button on the exposed object with the original pattern board and the exposed object mounted on the device, and the original pattern substrate. 3. The lens projection exposure apparatus according to claim 2, wherein each of the objects to be exposed is provided with a device for adjusting the distance from the projection lens and the angle of inclination with respect to the projection lens.
JP58128399A 1983-07-14 1983-07-14 Lens projection and exposure method and its device Granted JPS6021051A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58128399A JPS6021051A (en) 1983-07-14 1983-07-14 Lens projection and exposure method and its device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58128399A JPS6021051A (en) 1983-07-14 1983-07-14 Lens projection and exposure method and its device

Publications (2)

Publication Number Publication Date
JPS6021051A true JPS6021051A (en) 1985-02-02
JPH037138B2 JPH037138B2 (en) 1991-01-31

Family

ID=14983834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58128399A Granted JPS6021051A (en) 1983-07-14 1983-07-14 Lens projection and exposure method and its device

Country Status (1)

Country Link
JP (1) JPS6021051A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62224026A (en) * 1986-03-12 1987-10-02 ア−エスエム・リングラフイ−・ビ−・ヴエ− Method and apparatus for alignment arranging mask and substrate mutually
JPS6313331A (en) * 1986-07-04 1988-01-20 Hitachi Ltd Reduction projection exposure equipment
JPS6341021A (en) * 1986-08-06 1988-02-22 Nec Corp Reduction stepper
JPS6354721A (en) * 1986-08-25 1988-03-09 Nikon Corp Alignment system
US4730927A (en) * 1985-04-09 1988-03-15 Nippon Kogaku K.K. Method and apparatus for measuring positions on the surface of a flat object
JPS6365442A (en) * 1986-09-08 1988-03-24 Mitsubishi Electric Corp Reduction stepper
JPS63164212A (en) * 1986-12-26 1988-07-07 Hitachi Ltd Reduction projection exposure equipment
JPS6449227A (en) * 1987-08-19 1989-02-23 Hitachi Ltd Stepper
JPH0338820A (en) * 1989-07-05 1991-02-19 Seiko Instr Inc Manufacture of semiconductor device
JPH0715876B2 (en) * 1985-07-03 1995-02-22 株式会社ニコン Exposure method and photolithography apparatus
JP2009117872A (en) * 2004-05-14 2009-05-28 Asml Netherlands Bv Alignment system and method and device manufactured thereby

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS516565A (en) * 1974-06-06 1976-01-20 Ibm
JPS5315078A (en) * 1976-07-23 1978-02-10 Siemens Ag Method of automatically adjusting layer material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS516565A (en) * 1974-06-06 1976-01-20 Ibm
JPS5315078A (en) * 1976-07-23 1978-02-10 Siemens Ag Method of automatically adjusting layer material

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4730927A (en) * 1985-04-09 1988-03-15 Nippon Kogaku K.K. Method and apparatus for measuring positions on the surface of a flat object
JPH0715876B2 (en) * 1985-07-03 1995-02-22 株式会社ニコン Exposure method and photolithography apparatus
JPS62224026A (en) * 1986-03-12 1987-10-02 ア−エスエム・リングラフイ−・ビ−・ヴエ− Method and apparatus for alignment arranging mask and substrate mutually
JPS6313331A (en) * 1986-07-04 1988-01-20 Hitachi Ltd Reduction projection exposure equipment
JPS6341021A (en) * 1986-08-06 1988-02-22 Nec Corp Reduction stepper
JPS6354721A (en) * 1986-08-25 1988-03-09 Nikon Corp Alignment system
JPS6365442A (en) * 1986-09-08 1988-03-24 Mitsubishi Electric Corp Reduction stepper
JPS63164212A (en) * 1986-12-26 1988-07-07 Hitachi Ltd Reduction projection exposure equipment
JPS6449227A (en) * 1987-08-19 1989-02-23 Hitachi Ltd Stepper
JPH0548931B2 (en) * 1987-08-19 1993-07-22 Hitachi Ltd
JPH0338820A (en) * 1989-07-05 1991-02-19 Seiko Instr Inc Manufacture of semiconductor device
JP2009117872A (en) * 2004-05-14 2009-05-28 Asml Netherlands Bv Alignment system and method and device manufactured thereby

Also Published As

Publication number Publication date
JPH037138B2 (en) 1991-01-31

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