JPS60195403A - Distortion distribution sensor - Google Patents

Abstract

PURPOSE:To execute easily a gauge arrangement and a connection of a blocking diode by constituting a strain gauge by a semiconductor layer of a different conductive type for forming p-n junction on a substrate, and connecting one end of its layer contacting to the substrate and the end of the opposite side, to each conductor of two conductor groups. CONSTITUTION:Plural metallic conductors 2 being parallel to each other and plural metallic conductors 1 crossing said conductors are formed on a substrate 7, a p type amorphous silicon (a-Si) film 91 is formed on an insulating film 8 for converting the conductor 2, a non-dope a-Si film 92 and an n type a-Si film 93 are formed in order on said film, and a laminated a-Si film 9 is constituted. Subsequently, one end of the film 91 is made to contact to the conductor 2 whose one part has been exposed from the film 8, the other end of the film 9 of the most distant layer of its opposite side is made to contact to the conductor 1, and a distortion distribution is measured by scanning electrodes 4, 5 provided on terminals of the conductors 1, 2.

Description

DETAILED DESCRIPTION OF THE INVENTION (Prior Art and its Problems) The present invention relates to a strain distribution sensor in which a large number of strain gauges are arranged on a plane (1) and the resistance changes thereof are scanned.

(Prior Art and its Problems) It is desirable for a robot hand that handles various objects to grasp the object with an appropriate force depending on the type of object being handled. For this purpose, it is necessary to know the planar distribution of gripping force. To measure such a distribution, as shown in Figure 1, a strain strain is applied in which both ends of the conductor wires 1 and 2 are connected near each intersection of the conductor wires 1 and 2, which are arranged vertically and horizontally in a lattice pattern insulated from each other. Gauges 3 are arranged to form a matrix, voltage is sequentially applied to terminals 4 and 5 provided at the ends of conductors 1 and 2, each gauge 3 is scanned, and the resistance change of each strain gauge 3 is determined from the flowing current value. To measure strain distribution, know the following. For example, in order to know the resistance value of strain gauge 31, a voltage is applied between terminals 41 and 51, but at this time, a blocking diode is connected in series with each gauge 3 to prevent current from circulating through other strain gauges. 6 must be connected. Furthermore,
The resistance value of a strain gauge is determined by the direction of the gauge and the direction of strain (
2) Since it depends on the angle formed, each gauge must be aligned in a predetermined direction in order to obtain an accurate strain distribution. To measure strain distribution with high precision, it is necessary to arrange as many strain gauges as possible.
It is extremely difficult to apply such a large number of strains in precisely aligned directions. It is also extremely difficult to connect blocking diodes to each of these so as not to change the strain distribution.

(Object of the Invention) The present invention eliminates the above-mentioned difficulties and provides a strain distribution sensor in which a large number of strain gauges each arranged in a predetermined direction to form a matrix and blocking diodes connected to the strain gauges can be easily formed. The purpose is to

(Summary of the Invention) According to the present invention, in a strain distribution sensor in which each of a plurality of strain gauges is connected between one conductor of each of two mutually insulated conductor groups made up of a plurality of conductors,
A strain gauge is made up of semiconductor layers of different conductivity types stacked on a substrate to form a pn junction, and one end of the layer in contact with the substrate, one end of the layer farthest from the substrate, and the opposite end are each made of a group of different conducting wires. The above object is achieved by being connected to the conductor.

(Embodiment of the Invention) FIG. 2 shows an embodiment of the present invention, and parts common to those in FIG. 1 are given the same reference numerals. The strain gauge 9 in this case has a structure as shown in FIG. 3, which is a cross-sectional view taken along the line AA in FIG. The substrate 7 is a flexible polymer film such as polyimide and has a thickness of 40 to 120 μm. A plurality of metal conductive wires 2 are formed in parallel thereon. The metal conductor 2 is made of Ni,
Or, stainless steel, Ti or Ni-0rSNi
-Or-Au, Ti-kl-Ou, Ti-Al=N
It is formed by electron beam evaporation or sputtering evaporation to a thickness of 1000 to 5000 Å. Next, a portion of the conductive wire 2 is exposed and covered with an insulating film 8. A p-type amorphous silicon (hereinafter referred to as α-31) film 91 is formed on this, one end of which is in contact with the conductive wire 2. This α-81 film 91 is formed by glow discharge decomposition of silane gas. That is, diborane gas is added to silane gas diluted 10 to 30 times with hydrogen gas, and 1 to 10 To
It is decomposed by applying a high frequency electric field in a vacuum of rr.

The substrate temperature was maintained at 150-300'O, and the film thickness was 20
It is 0OA. When increasing the high frequency power, 50 to 2
Microcrystalline grains with a size of 0OA grow into the film.

The electrical conductivity of the p-type and n-type films-81 that do not become microcrystalline is 10.
~10 (Ωcm), but in the case of microcrystallization, it is 1~
10 (ΩCta). Next, non-doped α-8i
The film 92 and the n-type film-8i film 93 were each 0.511%,
Form to a thickness of several hundred people. Such a laminated α-81 film can be patterned into any desired shape by photolithography. Then, the metal conductive wire 1 is brought into contact with the other end of the laminated α-81 film 9. Although not shown, this is further covered with a protective film. α
-81 The dimensions of the membrane 9 are all formed the same, width Q, 1 m
m and the length lyxm, the resistance between the metal conductive wires 1 and 2 is about 500Ω, and the non-doped film 92. n-type α-81 membrane 9
The same thing happened when 3 was not provided. In such a structure, there is a gauge resistor made of p-type film 81 and film 91, and a p-type film made of p-type film 91, non-doped film 92, and n-type film 93.
Since a blocking diode consisting of an in-junction is connected in series, it has an IJ rack configuration similar to that shown in Fig. 1, and by scanning and measuring the combination of electrodes 4 and 5, the in-plane strain distribution can be determined. can.

FIG. 4 shows an example in which a pair of strain gauges are arranged at right angles to each other to form a matrix. In this case, in addition to the conductor wire 2, a plurality of conductor wires 10 having terminals 11 are formed, and a strain gauge 12 is located at right angles to the strain gauge 9 between the conductor wires 1 and 2 made of α-81 film. . Fifth
The figure is a cross-sectional view taken along the line B--B in FIG. 4, and parts common to those in FIG. 3 are given the same reference numerals. Conductor 2.10
is formed on the substrate 7, and a p-type film -8 is formed on the substrate 7 through the insulating film 8.
1 film 91, non-doped film 92, 111 type a-sj film 93
is formed. FIG. 6 shows an equal circuit, in which each strain gauge 9, 12 can be separated and scanned for measurement by blocking diodes 61 and 62 formed from pin junctions. In this case, it is also possible to detect the strain angle from the ratio of the resistance values of the strain gauges 9.12. Note that the semiconductor thin film is not limited to amorphous, and may be a crystalline semiconductor thin film.

FIG. 7 shows an application example of the strain distribution sensor according to the present invention, in which the arm portion 13 of the robot hand supports the hand portion 14.15 and further has a driving portion for opening and closing the hand portion 14.15. There is. Cushion 1 between hand parts 14 and 15
It is equipped with 6. The strain distribution sensor 17 is attached to a necessary location such as the inside or outside of the hand. This robot hand
For example, when trying to pick up a cup, the reaction force causes strain in the hand portions 14 and 15. This strain is read by the sensor 17, and a permissible force is applied to the tip to lift the tip without breaking it.

In this case, by measuring the strain within the plane of the robot hand rather than at a single point within the hand, the force applied to the tip can be accurately evaluated.

(Effects of the Invention) In the present invention, the strain gauge constituting the matrix is formed of a laminated semiconductor thin film having a pn junction.This allows the gauge to have a built-in blocking diode connected in series at the same time. It is possible to measure strain distribution. Furthermore, since the semiconductor thin film can be patterned into any shape, it is possible to easily form a large number of strain gauges arranged in a predetermined direction, and since the connection with conductive wires is easy, it can be manufactured at low cost. By using such a strain distribution sensor, strain gauges aligned in the same direction can be mounted on the required surface in any size, and can be used as pressure sensors, etc., making it possible to bring the sensation of a robot hand closer to that of a human. possible.

[Brief explanation of drawings]

FIG. 1 is a schematic plan view of a strain distribution sensor, FIG. 2 is a schematic plan view of an embodiment of the present invention, and FIG. 3 is a schematic plan view of the strain distribution sensor.
Figure 4 is a schematic plan view of another embodiment; Figure 5 is a line sectional view;
6 is an equivalent circuit diagram of FIG. 5, and FIG. 7 is a perspective view showing an application example of the strain distribution sensor according to the present invention. 'i, 2, 10: Conductor, 9.12 + strain gauge, 91
: p-resistant α-81 film, 92: non-doped α-81 film, 93
: n-resistant α-81 film. Figure 1 θ Yuushima Figure 5 162 r / ////// ////+ 9□ -γ

Claims (1)

[Claims] 1) Each of the plurality of strain cages is made up of a plurality of conducting wires and is connected between one conducting wire of each of two mutually insulated conducting wire groups, in which the strain cage is mounted on a substrate. Consisting of semiconductor layers of different conductivity types that are stacked to form a pn junction, one end of the layer in contact with the substrate and the end opposite to the one end of the layer furthest from the substrate are respectively connected to conductive wires of different conductive wire groups. A strain distribution sensor featuring: 2. A strain distribution sensor according to claim 1, wherein the semiconductor layer is made of amorphous silicon. 3) A strain distribution sensor according to claim 2, wherein the semiconductor layer is made of microcrystalline amorphous silicon.