JPS60185130A - Semiconductor differential pressure transmitter - Google Patents

Abstract

PURPOSE:To prevent erroneous operation and damage of a differential pressure sensor by shock pressure and to improve the reliability in assembling the device, by a constitution, which comprises two pressure receiving diaphragms, two pressure receiving chambers, two isolating chambers and two measuring chambers, and in which a differential pressure sensor assembly is coupled to one pressure receiving chamber. CONSTITUTION:First and second diaphragms 13 and 12 are welded to the surface of first and second pressure receiving members 10 and 11, and pressure receiving chambers 15 and 14 on the low pressure side and the high pressure side are formed. A central diaphragm 16 is welded to the other surface of the second pressure receiving member 11, and an isolating chamber 17 on the high pressure side is formed. A differential pressure assembly 100 is coupled to recess part of the first member 10. Each chamber and each path are filled with non-compressive fluid. A shock pressure, which is applied to the side of the pressure receiving disphragms 12 and 13, is transmitted to measuring chambers 26 and 27 through the pressure receiving chambers and the isolating chambers. Therefore the erroneous operation and damage of a differential pressure sensor 21 is avoided. Even though excessive differential pressure is yielded on the surfaces of the diaphragms 12 and 13, the diaphragms are seated on the surfaces of the pressure receiving members and the sensor 21 is protected. The differential pressure assembly 100 is coupled to the pressure receiving member 10, and each constituent member is sequentially bonded on the same shaft. Therefore the assembling works become easy.

Description

[Detailed description of the invention]

[Field of Application of the Invention] The present invention provides a piezoresistive element formed on a single silicon crystal plate by a diffusion method, formed as a so-called diffusion type diaphragm on the silicon single crystal plate, and
A signal that corresponds to 10 body pressures? The present invention relates to a semiconductor differential pressure generator in which the diaphragm is configured to generate and protect against overpressure or shock pressure. [Background of the Invention] This type of differential pressure transmitter For example, JP-A-53-79582
The diffusion type diaphragm serving as the detection element is joined to a member forming the pressure receiving part (Iq).
Furthermore, two pressure receiving diaphragms and one compensating diaphragm constitute the overload safety guard stage. Although this known differential pressure estrous device has achieved desirable results in many areas, it still has some drawbacks. In other words, in the differential pressure generation function 4δ described above, the pressure receiving chamber consisting of both legs of the differential pressure detection element, the pressure receiving diaphragm, and one end plate are directly connected without intervening a compensation chamber, so that the impact pressure is reduced. When this reconnaissance pressure is applied, this reconnaissance pressure acts directly on the dl:I foot chamber, and is highly likely to cause the running pressure control element to malfunction or cause it to malfunction. Ta. In addition, another drawback of this device is that the differential pressure structure element is not suitable for the sieve and [~
Electricity from the differential pressure detection element is
Retrieving the number was complicated. Also, d of the differential pressure detection element
The pressure receiving part member that connects the Hiroo and the pressure receiving part cannot be processed.
'Fit:', and the connection path such as vibrator is inevitably attached to IJ
I had to let itf go. Therefore, the technology becomes +1-6 system, and there are disadvantages such as increase in size. The purpose is to provide a differential pressure transmitter.The first purpose is to prevent the semiconductor differential pressure sensing element from malfunctioning due to shock pressure, damage and noise, and the second purpose is to prevent overload protection. is the electrical extraction configuration from the semiconductor detection element.
cE is achieved by a relatively simple and compact configuration, and the third and seventh objectives are to provide a reliable assembly of the diaphragm and to eliminate damage caused by static pressure to the semiconductor differential pressure sensing element. Differential pressure generator? ! - To provide. [Summary of the Invention] The semiconductor differential pressure generator 1d according to the present invention proposed to achieve the above-mentioned objects can be achieved by a combination of the following magical features. That is, (a) It is equipped with two pressure receiving diaphragms that are in contact with pressure, and two pressure receiving parts (-perfect circular pressure receiving chamber, low pressure 11411 pressure receiving chamber) formed by each pressure receiving diaphragm and the pressure receiving part 1iJJ. (b) An isolation chamber 17 connected in series with these pressure receiving chambers is equipped with a purple diaphragm (hereinafter referred to as the center diaphragm) at the center of the isolation chamber. Commercial ll1l branched out at
Isolation and low pressure 5ill l1111 room? Form. Subtracting these β: ; 1.1 area IL to and pressure receiving chamber and t', pressure receiving part 1 and 1 are both 111u and 10r I near';l's contribution
J4. The text on the table I:r:, 6It body removed from the chamber, diaphragm crab 811 oil prefecture, one law surface, one fern, all can be sucked. Hold L Una I-f4i', and hold the middle diaphragm V, and the body 1A of the father LL room of J.
('C child's rigidity n/tool 1) iijl-ru. (C) The measurement value connected to this bit 7'll and 1 [, L, this 1llj military plan is the father) 16 + c) Ir3 is generated corresponding to the pressure difference between the seven diamonds. The Ichikawa 1111 rectangular chamber and the low pressure 1111 Hiroshi Sushijiri, which are defined by the ten-dimensional light pressure seven lengths, are separated. In this case, these foot chambers 1iilJ and iiJ septum have a paternal pressure F', +
! Connect from VC.
It is composed of a first part 4A and a second part whose extension surfaces are in contact with each other and which are approximately the same as the diaphragm.
And the semi-dedicated running sensor Hj1j is disposed within the concave portion formed in the first member. δResara V (A seal is formed in the hole where the seal fitting is inserted, and the convex part of the metal fitting is inserted into the hole and the outer periphery of the first member is sealed.) [Embodiment of the Invention] Fig. 1 is a cross-sectional view showing an example of a half-ξI body differential pressure estrus device according to the present invention. The pressure receiving part shown in the same figure where the differential pressure transmitting ≧ is
It is made up of 14 pieces of Eiil material 10 and @'42 mA) +' l 1. 1111 V? outside of the pressure-receiving part 1 member lO and the 2nd part 11? - is provided with a flexible grinding pressure side pressure receiving diaphragm 12 and a low pressure side pressure receiving diaphragm 13, and on the surfaces of the first and second members 11 of the pressure receiving section, each pressure receiving diaphragm 12, A corrugated surface having the same shape as 13 is formed on each of the pressure receiving diaphragms 12 and 13r, and the outer periphery of the first member 10 and the second member 11 is fa fi? By joining, two pressure receiving chambers are formed between the pressure receiving member and the pressure receiving diaphragm, that is, the high pressure side pressure receiving chamber 14 and the low pressure 11i11 pressure receiving chamber 15. A middle diaphragm 1G is welded to the other side of the first member 11 of the pressure receiving section. After inspecting this inner b diaphragm l 6 k i
7olI is in contact with lr: at its outer periphery. From this J'LK, Ichikawa 1i1 is placed in 1Fli between the receiving part 11 and the middle part of the diaphragm 16! I interval! #i#u17 is formed. stiffness surface pressure 11 (isolation chamber 17 and MiJ f+-: +pressure 11111 receiving pressure 4 (14 is the 11th ÷ h6 provided with approximately medium heat VC of the second metropolitan edition 41)
Pressure 1J111 is connected to pressure passage 19. −
]j, In the other one button of the center b tire huff 16, there is a concave shaped part on the first member 10 of the shape JJy, σ, which is a V half tatami. Body motion pressure sensor assembly l) l 00 is (Iodai 1-5 and r'B 扉J'j'. Previous Me semiconductor difference If
Sensor assembly 100t;j:, half body differential pressure sensor 2
The r!
01 is in contact with the seal fitting 23 through the hole. Half of this seal fitting 23! ! Body pressure sensor 21 electrification k111. A ceramic base and a hermetic seal bottle 25 with a 24-foot diameter and a cylindrical shape are also installed. Electrical connection between the half body differential pressure sensor 21 and the ceramic substrate 24 is made by a wire bonding plate (not shown). Previous ^ Semi-dedicated differential pressure sensor assembly 100 pregnant pigeons 1 part l
The first metropolitan area 10 formed by bath welding to O
The commercial side Hi-ro 28 electrical connection installed in the first city is connected to the

[7, P'J
ilL middle] b diaphragm 16 and second capital 11) N
Previously, the π11 for the cylinder and the 17 for the cylinder were used consecutively. On the other hand, in another attack on the half-body differential pressure sensor 21, a low pressure chamber 27 short 27r is formed between the recess m of the diaphragm J^ of the superimposed body differential pressure sensor 21 in the housing and the support base 22. The measuring chamber 27 is the shell of the support stand 22]111
The second low pressure 111+1 pressure passage 29 is connected to one side of the middle I-type diaphragm 16 through the hole. In particular, this central diaphragm 16 and iJ
I The outer peripheral surface of the plate 30 between I411 material lO
In bath contact with the inner circumferential surface of the first member lυ (and the plate 3
The inner circumferential surface of the metal seal fitting 23 and the outer circumferential surface of the metal seal fitting 23 are joined 8 to each other. This allows the center diaphragm 16 and the first part
U and gray 1' 3 U III'' to 1 substitute IIl
! lr case 1%, 1. Theory K18?) 1 many times. This 1 bottom pressure 1 rule interval 141 is applied to the tail t8i1 near iJ second low pressure side pressure path 29i valve and half jjA l'lI:2! '
: LE Sentsu 21 (1) m record #: Pressure 1KtJ0
1! l"xt '427: 1lj1. Furthermore, the low pressure (1i!I receiving pressure to 15 and the low pressure side compartment 18 are 1. 11 degrees of communication through 20 pressure passages.
11m 2nd city pressure 1lI11 tile pressure road 28 and 1st 1st generation I
i1+ill 2! , the x pressure passages 20 are formed so as not to intersect within the pressure receiving member lO.
VC is set so that removal from the hermetically sealed bottle 257Jh as described in iJ is possible. The lead path 33 provided in the upper lb cocoon of the body differential pressure sensor 21 and the lead path 33 provided in the corner direction and the notch of the plate 30 =XL
11, it can be easily pulled out by the holding printed board 34. As described above, the sealing between the lead path 33, the front pressure 111116i, the constant voltage 20 and the low pressure 1i11 toward the isolation chamber 18 includes the butt joint between the first member 10 and the first member 10 and the first seal member 23, and the first member 10 and the seal member 23. The bath welding 1c with the plate 30 is completely achieved at 7t. Each of the two chambers and each passage formed in this n-line structure is filled with a non-pressure axial fluid, such as a silicon layer. This oil is injected from the pressure path 20 above the first person 1 and branched from the second high-pressure squeezing pressure path 28, and is then sealed. The pins 31 and 32 are used to connect the pins 31 and 32 in contact with the outside air and seal the air to the outside air.
When an explosive pressure is applied, the pressure is first propagated to the pressure receiving chambers 14 and (15), and
From there, it propagates to the isolation chamber 17 (18), and then to the measurement plan 26f27 via the pressure line 28 (29)k. That is, it is necessary to measure m2 secondarily from the isolation chamber 17 (18) formed by the central diaphragm 16.
6 (27), so it works 2
- It is possible to sufficiently avoid malfunctions and shadows of the semiconductor radial pressure sensor 21 due to pressure. Next, excessive differential pressure occurs on both sides of the pressure receiving diaphragm 12 and 13.
One of the throats is seated at 1f which is formed on the side 1tll of the pressure receiving section soil 4. On the other hand, the center diaphragm 16 (removes and absorbs the volume of the pressure-receiving chamber (7) should not violate the basic principles of the partition chamber 17 or 18 as a matter of course. Due to this relationship, the VC pressure on either side of the semiconductor differential pressure sensor 21 is transmitted through the enclosed button valve.
11, the semiconductor differential pressure sensor 21 will not be destroyed. In addition, as mentioned above, the spaces and passages where the sealed oil is discharged should be kept free of any objects with
It has a dog-like ability and shock pressure avoidance function. 21 will not deteriorate or the visiting rate of the enclosing ring will not change, so the operation is stable.Next, to explain the process of assembling this semiconductor differential pressure transmitter, first, the half 4 is assembled into the body sensor assembly 10. (1”
The pressure receiving member lO is bath welded, and then the seal fitting 23 of the gate 3o'w semiconductor sensor assembly 100 and the first
Temporarily joined to member 10 (-1 then center diaphragm 16
First, contact-joint to the i-th Fill material 10, and then contact-joint to the second group 11i, and (1) contact-joint to the first fill material 10. That is, 1+1] can be simply created by simply joining each component r of the 1st 1st blood test from one direction to the VC bath on the 41u. According to the above-mentioned embodiment of the present invention, the following effects are obtained when compared with the healthy rice development 1d. (1) Semiconductor differential pressure sensors malfunction due to impact pressure.
And damage can be sufficiently avoided. (2) The overpressure prevention function and the attack opening means are simple, the number of parts is small, the relative size can be made small, the product can be manufactured easily, and reliability can be improved. (3) The 41st member 1O, which is the pressure receiving part, and the second member 1
1 and jd are respectively flat and parallel, and between them are intersected by the central diaphragm l 2 '. For this reason, the first member 10
1110 of the assembly where the joint I11 is exposed, and the second member 11 and the second member 11 are assembled, and then the joint I11 is exposed.
Therefore, if this part is used, the contact distortion that will occur after welding will be caused by the first member 10 and the second member 11.
and r are generated in the direction in which they are pulled together, and the clamping force of the middle Ib diaphragm 12 acts as 1/CI+magnification. For this reason, the Ib diaphragm 16ij first door opening 1011 (II) in RfJ is applied, but since the pressing force due to the action of the upper and lower half acts, -
One of the surrounding VCs can be used as a beggar. Roughly, the semi-insulator differential pressure sensor 21 is arranged in the concave part of the first member 1O, and is further sealed by inserting the gold JA23, and the convex part of this sealing edge 23 hole where is inserted? It is built in by a plaid 30 which is in contact with the inner circumference of the concave portion of the first member between the outer peripheries. This schematic diagram is shown in FIG. In the same figure, when static pressure P is applied to the pressure receiving part at 7J (slip 1), the opening force ( d, -a
, ) 2π F3 2 □P The force of turning the stone in the figure acts, (-maybe P゛2<ru゛1+F, so 1) The force acting on the seal fitting 23 is always directed to the right in the figure. [7. Therefore, the semiconductor radial pressure sensor 21 inside the seal fitting 23 is always connected to the first
It is pressed into the inner assembly of the member 10, /))
It is possible to eliminate the pressure W k f"f due to the silent pressure shadow of the sensor. [Effect of light] As explained in detail above, if it is constructed into a semi-transparent body pressure transmitter using a non-explosion (su), it will be extremely effective. The differential pressure transmitter equipped with the Shock Kawaguchi M mechanism can be made extremely compact, and the assembly for reliable diaphragm and half-body differential pressure output: tJ
'By pressing the image, you will be able to remove the cleansing grapes.
j: 151 explanation of half-obtained body differential pressure optical im-device by Rira Akira Hon.
J area 7J': -3-i91 side view, Figure 2 shows the effect of the main brother Akira, and the situation is the best. io, ii...Pressure receiving member 811, 12.13...Ichikawa 11ri and low j±11Ll1 party no±tire iaphram, 14.15...1Xun pressure 1Il11.1.・Yohi low j
Upper 1ii11 bearing pressure chamber, 16...middle lb diaphragm,
17.18...1υ1. Pressure 1110 minutes and low pressure separation room, 19°ZO... 19゜J''-J::i;-Equipment low voltage side η- route, 28°29...Second voltage.L ,−
Yohi low pressure t1 equal pressure 1-5, knee 30... great,
31.32...J bottle on cloth, 21...l"=
2! h 1 piece,...:j pise/su゛, 22...support chamber, 23...seal fitting, 24...kJM group &, 25
...Harmenano Kun - Lupin, 100...half! Body sensor f Senb 1c 33...Lead path, 34...
:・"Normal η'd'lint 4 tans, 35...-Hfk
Connector, 36...Joint Canada, 37.38
...fufunoji, 39...volt, 40...nano)
, 41.42... Casquant. 1st mouth＼” ↑? 3 Akito

Claims (1)

[Claims] 1. Two pressure-receiving diaphragms supported on the side surfaces of the pressure-receiving member, a low-pressure side pressure-receiving chamber formed between each of the pressure-receiving diaphragms and the pressure-receiving portion, and a low-pressure side pressure-receiving chamber made by a pressure-receiving shop, with the front part inside the pressure-receiving member. A central diaphragm incorporated in the center diaphragm, an Ichikawa 9111 isolation chamber separated by the middle lb diaphragm, a semiconductor differential pressure sensor inserted into the pressure receiving part, and the semiconductor differential pressure sensor High pressure side chamber and low pressure +11u 61 separated by this differential pressure sensor
11 Fixed room and equipment [~, forward bending pressure receiving member is IL during front tα?
The diaphragm surface is composed of a first member and a second member whose r/r extension surfaces are joined to each other, and the semiconductor differential pressure transmitter is disposed within a recess formed in the first member. It is sealed by inserting the rC seal spiritual tool, has a hole into which the convex part of the seal fitting is inserted, and is machined into a brace whose outer circumferential surface abuts the inner circumferential wall of the concave part of the first member. Furthermore, the high pressure side pressure receiving chamber is connected to the cylinder side measurement chamber via the high pressure side isolation chamber r, and the high pressure side pressure receiving chamber is connected to the previous mountain pressure side pressure receiving pressure through the low pressure side isolation chamber. 1μ++ m++
A semiconductor differential pressure transmitter characterized by being connected to a fixed point.