JPS60178626A - Formation of resist pattern and resist treater - Google Patents

Abstract

PURPOSE:To form a pattern having high accuracy efficiently and rapidly by baking a resist film at a temperature Tb higher than a glass transition temperature Tg before development treatment after exposure, uniformly cooling the resist film to a fixed intermediate cooling temperature Tm once and equally cooling it quickly to a final cooling temperature Tc. CONSTITUTION:A resist is applied on a substrate to be treated. Said resist film is pre-baked, and cooled as it is. The resist film is exposed by electron rays under predetermined conditions, and baking before development and controlled uniform cooling treatment are executed by using a resist treater. A baking temperature Tb is selected within a range of 200 deg.C from a glass transition temperature Tg of 133 deg.C. The temperature of the resist film is lowered equally to an arbitrary intermediate cooling temperature Tm (Tm<=Tb). The temperature is further lowered rapidly and uniformly to a final cooling temperature Tc. A temperature such as 25 deg.C is selected as the final cooling temperature Tc.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method of forming a highly accurate resist pattern by controlling the sensitivity of a resist I, and a resist processing apparatus for realizing the method.

[Technical Background of the Invention and Problems Therewith] As the integration density of semiconductor elements, including VLSIs, increases, finer and more precise pattern forming techniques are required. For this reason, in the cutting-edge field, in the case of a thin chiro mask or a 5-inch diameter wafer, for example, 3σ is one method error for the average dimension value of the pattern in the substrate plane.
<0.1 [μm] is required. Furthermore, in a mass production line, speed of the pattern formation process is essential, and high sensitivity of the resist is desired. However, conventionally high-sensitivity resists have poor resolution, making it difficult to obtain desired pattern dimensional accuracy; conversely, high-resolution resists have low sensitivity, making it difficult to form patterns on mass production lines. There were problems such as the inability to achieve high throughput.

FIG. 1 shows resist i to pattern forming process o according to the prior art.
2 is a flowchart showing ts. First, a regimen 15 is applied to a predetermined thickness on a substrate to be processed by a well-known spin coating method. Next, in order to remove the coating i8 medium and improve the adhesion between the resist and the substrate, the resist is baked (prebaked) using an oven or the like at a predetermined temperature (Tb >) depending on the resist. The resist-scented processed substrate taken out from the substrate is allowed to cool naturally on a support stand in the atmosphere for 20 to 30 minutes to room temperature. Then, electromagnetic waves in a predetermined wavelength range, such as ultraviolet light, or particle beams with a predetermined energy, such as electron beams, are selectively illuminated using a predetermined irradiation 41 (ii) depending on the type of resist.After that, yAV! A. A desired resist pattern is formed through the rinsing process.

However, when the present inventors investigated the temperature distribution of the entire film surface at a certain point in time using an infrared radiation thermometer regarding the resist film on the substrate to be processed during natural cooling described above in C1, we found that
The results shown in FIG. 2 were obtained. In this case, the temperature T 11 during baking prior to natural cooling is ~160
It was [°C]. In FIG. 2, the temperature is high (cooling is slow) at the upper center of the substrate 21 to be processed with a resist film (point A), and the center region (point B) is shown in red below (point 0).
As the temperature progresses, the temperature becomes lower (cooling speed becomes faster). Note that each curve in the figure is an equicross line.

FIG. 3 shows temperature changes over time at points A, B, and C in FIG. 2, and curves 31, 32, and 33 are cooling characteristics corresponding to points A, B, and C, respectively. The maximum temperature difference between point A and point B was about 15 [°C], and the maximum temperature difference between point A and point 0 was about 30 [°C]. These temperature measurements were performed by bringing a thermocouple into contact with the portion to be measured on the resist film. The reason for this (temperature distribution and cooling rate unevenness) is that the natural convection of the atmosphere due to heat dissipation occurs along the substrate surface because the naturally cooled medium-wave processed substrate is placed on a support stand etc. Possible reasons include that it tends to occur upwards and that heat is easily removed from the lower part of the substrate by the support. Also,
The present inventors focused on the relationship between the humidity distribution during cooling of the resist film-coated substrate to be processed and the dimensional accuracy of the resist pattern after irradiation and development processing, and found that
When we measured the dimensions of the pattern formed in areas B and C, we found that the pattern, which should originally have the same dimensions of, for example, 2 [μm1], had a size of 0.1 [μTrL] at point B and 0 at point 0.
．． An error of about 2 [μγyL] occurred, and it was confirmed that the temperature distribution during cooling of the resist film-coated substrate and the size distribution of the formed resist pattern completely corresponded through the sensitivity distribution of the resist.

Therefore, it has been found that in order to obtain a highly accurate resist pattern with uniform pattern dimensions, uniform cooling that does not cause temperature distribution within the substrate surface after resist baking is essential.

On the other hand, the inventors et al.
In view of the relationship between the process and the sensitivity of [regis], various experiments and
As a result of repeated research, the resist was heated to a temperature of -4T above the glass transition temperature of the resist for J9i9 hours! After baking II, the temperature of the resist film is first lowered from Tb to an arbitrary intermediate cooling temperature Tm, and then rapidly cooled from Tm to an arbitrary final cooling temperature Tc, for example, below the lowest temperature (Tb≧TI>TO). By,
It has been found that the sensitivity of the resist can be completely controlled with good reproducibility. Furthermore, it has been found that the resolution of resist patterns formed by controlling these cooling processes is not at all degraded compared to the original pattern resolution of the resist. In addition, it has been found that a resist pattern with extremely high dimensional accuracy can be formed by performing the resist decooling of Tb→Tm→TC uniformly over the entire substrate surface.

In addition, as a result of further intensive research, the present inventors have found that a high-precision resist pattern similar to that described above can also be obtained by performing a controlled resist baking and cooling process after exposure and before development. I found out that it can be done. That is, after pattern exposure and before development processing, the glass transition temperature T
After baking the resist film (hereinafter referred to as pre-development baking) at a temperature Tb equal to or higher than o, the temperature of the resist film is first lowered to Tb.
to an arbitrary intermediate cooling temperature Tm, and then Tl11
If it is rapidly cooled from to the final cooling humidity TC (Tll≧
Tm > Tc ), it was found that the sensitivity of the resist could be controlled to any value with good reproducibility, and a resist pattern with high dimensional accuracy could be formed.

[Objective of the Invention] The object of the present invention is to arbitrarily control the sensitivity of the resist to electromagnetic waves or particle beam irradiation without deteriorating the resolution, and to create a highly accurate resist pattern. An object of the present invention is to provide a resist pattern forming method that can be formed and a resist processing apparatus for realizing the method.

[Summary of the Invention] The gist of the present invention is that after exposure and before development, the resist film is baked at a temperature KTb higher than the glass transition temperature Ti1, and then uniformly cooled to a predetermined intermediate cooling temperature Tm, and then The objective is to rapidly and uniformly cool the intermediate cooling temperature Tl11 to the final cooling temperature TC.

That is, the present invention applies and forms a resist film on a substrate to be processed, prebakes it, and then selectively irradiates the resist film with an mR1 wave of a predetermined wavelength or a particle beam of a predetermined energy to expose the resist film, In a method of forming a resist pattern by performing a development process, after the exposure and before the development process, the resist itself is baked at a predetermined temperature 1-b higher than the glass transition temperature Tg of the resist (hereinafter referred to as a pre-development base). The resist film is then cooled uniformly from the temperature Tb to an arbitrary intermediate temperature TI, and then rapidly and uniformly cooled from the intermediate temperature TI to the final cooling temperature To. be.

The outline of the resist pattern forming method according to the present invention is explained in the fourth section.
As shown in the figure. First, a resist film is coated and formed on a substrate to be processed. Next, the resist is prebaked and cooled normally. Next, the resist film is exposed to light in a predetermined pattern. However, the resist film is baked (pre-development bake) at a predetermined temperature Tb that is higher than the glass transition temperature To of the resist. After pre-development baking, the temperature of the resist sensitivity (that is, the temperature of the substrate to be processed with the resist film) is changed from the baking temperature Tb to an arbitrary intermediate cooling temperature Tn+ (Tb≧T+a
). Next, a second cooling is performed to rapidly and uniformly lower the intermediate cooling temperature Tl11 to the final cooling temperature Tc. In this case, by arbitrarily selecting the temperature difference Tm - Tc during the second cooling, the final cooling temperature is The resist sensitivity obtained can be controlled to any value. Furthermore, in order to maintain a uniform concentration distribution over the entire substrate with a resist film, the baking and cooling treatments are performed at the same location without moving the substrate. However, a predetermined resist pattern is formed by developing and rinsing the resist having undergone the pre-development baking and cooling process.

The present invention also provides a resist IQ coated on a substrate to be processed.
A resist processing apparatus that bakes and then cools the substrate includes a substrate support that supports the substrate, and is also provided above the support, and irradiates the substrate supported by the support with infrared rays or blows hot air onto the substrate. a beta mechanism for baking the resist film at a temperature equal to or higher than the glass transition temperature Tg of the resist; and a beta mechanism for baking the resist film at a temperature equal to or higher than the glass transition temperature Tg of the resist; A cooling mechanism is provided to uniformly and continuously perform baking and cooling of the resist film while controlling the temperature without moving the resist film coated substrate.

[Effects of the Invention] According to the present invention, the sensitivity of a resist to electromagnetic waves or particle beam irradiation can be arbitrarily set without deteriorating its resolution. For example, even when using a low-sensitivity resist, the method of the present invention can increase the sensitivity without deteriorating the resolution, thereby shortening the irradiation time with electromagnetic waves or particle beams, and reducing the processing time for resist pattern formation. It is possible to significantly shorten the time. Furthermore, since resist baking and cooling are performed without moving the substrate to be processed, these processes can be carried out continuously and quickly. Moreover, since there is no need to move the substrate during the baking->cooling process, the baking->cooling process can proceed uniformly without causing unnecessary thermal contact from the outside, resulting in coating on the substrate. It is possible to prevent uneven cooling, that is, uneven sensitivity, from occurring in the rinse 1. Therefore, the resulting resist pattern has extremely high dimensional uniformity.

Furthermore, since the effects of the present invention can be obtained regardless of the thermal history of the resist during and before exposure, it is not a problem even if the temperature of the resist increases during exposure, and it is not necessary to particularly change the conventional pre-bake/cooling process conditions. Nor. Furthermore, since the resist sensitivity can be controlled to an arbitrary level, the range of rinsing of the exposure apparatus, that is, the types of usable resists can be expanded. In addition, even if the amount of electromagnetic waves or particle beams irradiated to the resist during exposure is not appropriate, or if the irradiation port is exposed incorrectly, by performing the pre-development beta and the above-mentioned controlled cooling, the resist will remain intact even after exposure. Sensitivity can be controlled and process modifications can be made to obtain high opening patterns.

[Example of the invention] <Example> In the present invention, poly(2,2,2-trifluoroethyl-α
A method for forming a resist pattern using a positive electron beam sensitive resist made of (chloroacrylate) will be described. First, the resist described above is applied onto a substrate to be processed by a well-known spin coating method. The coating film thickness is, for example, Q, 3~
It may be about 1 [μm], but here it was set to 0.8Eμm]. There are many substrates to be processed, such as semiconductor wafers and glass substrates, but here we use a glass substrate with a metal film.
.

Next, the pre-resist film was prebaked and allowed to cool naturally. The pre-bake temperature was 160 ['C:] and the pre-bake time was 30 minutes. Regis I- during natural cooling
No special attention was paid to the concentration distribution across the membrane. That is, intentional uniform cooling over the entire resist film coated substrate was not performed. Next, the resist film was subjected to electron beam exposure under predetermined conditions. Thereafter, the resist film was subjected to pre-development baking and controlled uniform cooling using a resist processing apparatus as described below.

The bake temperature Tb is the glass transition temperature T(
The temperature may be selected within the range of 1 to 133[°C] to 200['C], but here it was set to 180['C].The pre-development bake was performed for about 10 minutes.The resist solvent was sufficiently removed in the pre-baking process. Therefore, there is no need to make the pre-development baking time too long.In this example, it was set to 10 minutes.Next, the temperature of the resist film-coated substrate (that is, the temperature of the resist film) was set to an arbitrary intermediate cooling temperature. Tll
1 (TIll≦Tb). Further, the temperature of the substrate was rapidly and uniformly lowered from the intermediate cooling temperature TI to the final cooling temperature Tc. In this example, the intermediate cooling temperature (rapid cooling start temperature) Tm is the glass transition temperature T of the lint.
o (~133℃), 180~40 ['C]
The temperature was varied by 10 ['C] within the range of . In addition, vlM (25°C) was selected as the Jll final cooling temperature TO. FIG. 5 shows the temperature change Tb-+Tl→TC during cooling of the resist film-coated substrate when the intermediate cooling temperature, that is, the rapid cooling start temperature T+++ is, for example, 150 [° C.].
A, B, and C shown in FIG. 2 on the resist surface on the substrate to be processed.
These are the results of measuring temperature changes in three regions that are approximately the same. The characteristics corresponding to temperature changes in each region of A, B, and C are curves 51, 52, and 53, respectively, and compared to the cooling characteristics of the conventional method shown in FIG.
) It is clearly seen that uniform cooling is achieved, particularly in the T+a-+Tc cooling region, uniform and rapid cooling is achieved. Such uniformity (Tb −+Ti −+Tc)
Te rapid cooling (Tm −+Tc) is achieved by any other Ts
The same was also recognized.

Note that the cooling time from Tm to Tc of the substrate to be processed was 10 seconds or less in all cases of this example. The above baking and cooling process (TI) -180°C - +7m when the value of the intermediate cooling temperature, that is, the rapid cooling start temperature TI, is varied.
The sensitivity to electron beams (the amount of electron beam irradiation when the remaining thickness of the resist film becomes zero under the specified development conditions) of each resist sample after undergoing a test (+ - + Tc - 25°C) was investigated, and the results are shown in Figure 6. The characteristics shown in (a) were obtained. Figure 6 (
The characteristics of a> are obtained by irradiating the resist film with an electron beam of 20 [keV], then performing the above-mentioned pre-development baking and cooling processes, and then applying methyl isobutyl ketone (MIB) at room temperature.
K): It was obtained by developing with isopropyl alcohol (IPA) = 7:3 developer for 10 minutes, and then rinsing with IPA solution for 30 seconds. Figure 6 (
As seen in a), in the resist cooling process from Tb−+l”n+→Tc, the intermediate cooling temperature, that is, the rapid cooling start temperature T
I is the glass transition temperature Tg of the resist (~133°C)
There can be a wide range of changes in resist sensitivity in the temperature range that is approximately equal to . In the Tb≧TI >To region, high resist sensitivity is 19, and as TI approaches Tb, the sensitivity increases, and the maximum resist sensitivity is ~1.2X10. [
C/cj] is obtained. T(+ >TI >Tc(-2
5° C.), as the rapid cooling start m1Tll decreases, the rinse I/sensitivity decreases and approaches the sensitivity of conventional natural cooling ~8X10'' IC,/cd].

On the other hand, a substrate with a resist film (a 6-inch glass substrate with a metal film) coated with the above resist to a thickness of ~0.8Eμl
After pre-baking and natural cooling in the same manner as above, apply 20 minutes to the entire surface of the resist film coated substrate except for the peripheral area.
[keV] Selective pattern exposure is performed using an electron beam lithography device at a dose corresponding to each of the above sensitivities, and pre-development bake (Tb = 180° C.) and Tll→Ti −) corresponding to each of the above sensitivities are performed. TO (Tc-25°C) was cooled, then MIBK/IPA (-773°C) at room temperature.
) Development and IPA rinsing were performed to form a resist pattern. These resin patterns were clean and all had good pattern resolution. Furthermore, as a result of measuring and evaluating the dimensional accuracy of cyst patterns in the range of line widths from 0.5 to 2.0 [μFFL], the resist patterns in all cases were all highly accurate, with a dimensional variation error of 3σ within the substrate surface. The value of 0.1 [μTrL] was sufficiently satisfied.

<Example 2> In this example, polymethyl methacrylate was used as a resist. The basic steps are substantially the same as in Example 1. Pre-bake after rinsing application is 3 at 160['C]
After prebaking, the resist film coated substrate was cooled by natural cooling. Electron beam exposure has an accelerating voltage of 20
[keV]. After exposure, the resist film was subjected to a pre-development bake and a cooling process of the present invention. The baking temperature Tb at the time of baking before development is 170 ["C] which exceeds the glass transition temperature II T U ~ 110 C] of this resist.
It was set to The baking time was 10 minutes. After the pre-development baking, the final cooled fJI concentration Tc=25['c] is passed through various intermediate cooling temperatures Tm from the bake temperature '1=170['c].
℃] was rinsed and cooled.

The intermediate cooling temperature, that is, the rapid cooling start temperature Tll1 is 170~
The temperature was changed in steps of 10 [°C] within a range of 40 [°C].

The cooling time from each Tm to Tc (=25°C) was ~10 seconds or less in this example as well. After the various cooling processes described above, the resist film was developed with MIBK for 13 minutes at room temperature, and rinsed with IPA for 30 seconds.
The sensitivity characteristics of each were investigated.

FIG. 6(b) shows the change in resist sensitivity with respect to the intermediate cooling temperature, that is, the rapid cooling start temperature Tl1l. Also in this embodiment, the rapid cooling start temperature T'n+
is the glass transition temperature of the resist Tl1l-110['C]
A wide range of sensitivity changes appears in the region approximately equal to .

Tb≧Tl1l >Tgf! In the h region, the higher Tll1 is, the higher the resist sensitivity is ~2×10-'[C/cd
] Reach the sensitivity of things. Tg>Tm>Tc (-25℃
) region, the lower the Tm, the lower the resist sensitivity becomes.
Sensitivity in the case of conventional natural cooling ~ lX10-6 [C/m
approach l.

On the other hand, a resist coated with the above-mentioned resist to a thickness of ~0.8 [μm] ~ a substrate with a film (a 6-inch glass substrate with a metal film) was prepared, and prebaked, naturally cooled, and exposed ( The resist pattern is formed by performing treatments such as (electron beam irradiation amount corresponds to each electron beam sensitivity above), pre-development bake, Tb→Tm-ITC cooling process (cooling process corresponding to each sensitivity above), development, and rinsing. As a result, the resolution of the resist pattern was good over all the substrates.Also, in this example, the line width was 0.
．． As a result of measuring and evaluating the dimensional accuracy of resist patterns in the range of 5 to 2.0 [μm゛], the resist patterns in all cases were highly accurate, and all dimensional fluctuation errors within the substrate plane were 3σ.
<0.1 [μm].

The main purpose of the present invention is to bake the resist film on the substrate to be processed after exposure and quickly and uniformly cool it before development, thereby increasing the speed of resist processing and increasing the precision of the resist pattern. In particular, the pre-development bake temperature T
b to the final cooling temperature TO (in the process of cooling the rinst bastard after baking to the final cooling temperature TO, an arbitrary intermediate cooling temperature T+++ (Tb≧Tl
1l > Tc), and set Tsuru as the rapid cooling fJl starting temperature and rinse i! Is the attached board R11? '9iI! The purpose is to arbitrarily increase the sensitivity of the resist by rapidly cooling it to the I temperature Tc. Therefore, if the method of the present invention is used, for example, various resist irradiation (exposure)
The sensitivity of the resist can be set arbitrarily and uniformly to suit the performance of the apparatus.

In the above example, an example of rinsing pattern formation regarding two types of resists was described. Methyl cellosolve acetate is usually used as the solvent), development and rinsing methods, baking temperature TI), etc. are also limited to the examples described above.

However, it has been confirmed that the effects of the present invention can be achieved using various known materials, resist solvents, development and rinsing methods, and baking temperatures Tb.

Furthermore, as described in the above examples, according to the research results of the present inventors, the bake temperature Tb and intermediate cooling temperature (rapid cooling start temperature r!I) Tm of the resist are equal to or higher than the resist glass transition temperature Tl1. It has been confirmed that in some cases, a significant improvement in resist sensitivity can be achieved by rapidly cooling the resist to a final cooling fJ+temperature Tc lower than To (Tb271027g>Tc). Furthermore, in a region where the temperature 1[TO of the refrigerant is below I+,
It has also been confirmed that the lower the resistance, the more the resist sensitivity after resist rapid cooling increases. Therefore, Tb≧T
If the intercooling temperature, that is, the rapid cooling start temperature Tl11, and the temperature To of the liquid coolant for resist cooling are selected to arbitrary values within the range that satisfies the relationship m≧T (1>Tc), the range of high sensitivity of the rinsing can be adjusted. It can be further expanded.TRI-)T
If the time required for rapid cooling of O is within ~10 seconds as in this example, the effects of the present invention can be substantially achieved; however,
Furthermore, the shorter the length, the more the effect of rapid cooling can be fully brought out.

Furthermore, as for the resist irradiation (exposure) method, the effects of the present invention can be obtained by using, in addition to the above-described electron beam, electromagnetic waves in a predetermined wavelength range such as light beams, X-rays, and ion beams, or particle beams with a predetermined energy.

<Embodiment 3> Next, an example of an apparatus suitable for carrying out the method of the present invention will be described with reference to FIG. 7. The apparatus shown in FIG. 7 converts the resist film (or the substrate coated with the resist film) to the glass transition temperature r! L1J is a fully automatic processing device for uniformly cooling or rapidly cooling a resist film after baking at a temperature above L1J while controlling the temperature of the resist film. First, an exposed resist film-coated substrate 71a is stored in a cassette 72a in advance, and is sequentially transported to a predetermined position by a belt conveyor 73a according to a predetermined transport sequence. Next, the resist I-film coated substrate 71a is transferred to a vacuum chuck conveyor 74a having a rotation and vertical movement mechanism.
is transferred onto the substrate support 76 of the bake/cooler 75. Here, the substrate to be processed with the resist film 71b is subjected to a predetermined baking and cooling process, and the key point of the resist processing apparatus for bringing out the effects of the present invention is the structure of this baking/cooling device 75. That is, the resist processing apparatus of the present invention includes at least the substrate 7 to be processed with a resist film.
It must have the ability to continuously perform the process of flattening and cooling at the same location without moving the 1b, uniformly controlling it and without unnecessary thermal contact from other parts.

FIG. 8 shows an example of a bake/cooler equipped with the above function, and its structure is as follows. That is, in this example, with the resist film-coated substrate 81 placed on the support 82, the planar heating/cooling fJ]vA83 is applied to the substrate 8.
They are arranged at predetermined intervals so as to face parallel to the resist coated surface of No. 1. The planar heating/cooling +1183 has a structure in which a heating source (bake mechanism) 84 and a cooling source (cooling mechanism) 85 are arranged alternately. A specific example of the planar heating/cooling source 83 viewed from the resist coated surface is shown in FIGS. 9 and 10. The example shown in FIG. 9 is a tube made of a cleaning material such as quartz, in which a large number of small holes 91 are uniformly provided at predetermined intervals.
A plurality of small hole groups are arranged in a plane so that all of them face the resist surface.

In this case, the pipes 92 for spouting clean heating gas (hot air) and the pipes 93 for spouting clean cooling gas (cold air) are arranged alternately, so that it can be arranged as desired. can be manipulated to produce the effect of The example shown in FIG. 10 is similar to the example shown in FIG. 9, and includes a tube 101 made of a cleaning material, such as quartz, in which a large number of small holes are uniformly provided at predetermined intervals, and a tube made of, for example, quartz, containing a heater. 102 are arranged alternately in a plane. In this case, the latter is used as a heating source, and the former is used as a cooling source in the same manner as in the example shown in FIG. Another example of a baking/cooling device having the above function is shown in FIG. In this example, with the substrate 111 to be processed with a resist film placed on the support 112, a heating/cooling m113 consisting of a group of tubes whose open ends are arranged in a substantially planar manner is connected to the resist-coated surface of the substrate 111. They are arranged at predetermined intervals so as to face each other in parallel.

In this case, the heating/cooling unit 113 has a structure in which heating source tubes 114 and cooling source tubes 115 are alternately arranged.

FIG. 12 shows a specific example of the planar heating/cooling device 113 viewed from the resist coated surface. In the example shown in FIG. 12, heating source openings (hot air outlets) 121 and cooling source openings (cold air outlets) 122 are arranged alternately in a matrix. In the examples shown in FIGS. 11 and 12, heating gas is introduced into the heating source tube, cooling gas is introduced into the cooling source tube, and the heating gas, By blowing out the cooling gas, a predetermined baking and cooling process can be performed. Further, regarding the beta process, a method may be adopted in which infrared rays are introduced into the heat source tube and the infrared rays are directed from the opening to the resist surface.

Now, in order to produce the effects of the present invention, a beta cooler such as the examples shown in FIGS. 8 to 12 described above is used as the bake cooler 77 in FIG. 7.

Settings such as beta temperature Tl) (Tb≧To), intermediate cooling temperature (rapid cooling start temperature) Ta, @final cooling temperature TO, etc.
Control of the first cooling process of b→Tn+, the second cooling process of -rm→TC, etc. is performed by controlling the temperature of the heating gas and cooling gas,
Gas flow rate from the nozzle, infrared Pi! 11. The processing may be carried out according to a pre-programmed sequence using parameters such as the temperature of the heater and the distance between the planar bake/cooler and the substrate to be processed. Furthermore, in the present invention, it is important to uniformly cool the resist after baking on the substrate to be processed, so unnecessary thermal contact that would disturb this must be avoided as much as possible. For this purpose, the substrate to be processed 7
It is preferable to use a material with low thermal conductivity, such as Teflon (trade name of DuPont), as the support 76 of 1b, and furthermore, it is better to make the contact between the substrate and the support as point-contact as possible. desirable. The substrate to be processed 7To, which has been subjected to the predetermined baking and cooling process in this way, is then transferred to a vacuum chuck carrier 74b having a rotation and vertical movement mechanism.
is moved to a predetermined position on the belt conveyor 73b. Then, a substrate 71 to be processed with a baking/cooling flow resist film
c is a belt conveyor 731 under a predetermined sequence.
) are sequentially stored in the cassette 72b, and the process of this apparatus is completed.

Please note that this device uses a single-wafer processing method, so
Depending on the situation, the processing time in the baking and cooling portions may become longer, making it impossible to achieve a high throughput. In such a case, the equipment can be improved by arranging a plurality of beta coolers, for example, in a circle or in parallel, setting an appropriate delay time, and performing the baking and cooling process in a circle or in parallel. It is possible to increase the overall throughput. Furthermore, it is also possible to increase the size of the container/cooler within a predetermined allowable range and adopt a batch processing method. The planar bake/cooler is designed to enhance the uniformity of baking/cooling on the resist surface.
Normally, it is desirable to make the beta/cooling surface area wider than the linst surface area facing parallel to each other. Further, in order to obtain a predetermined effect including the above-mentioned uniformity, the arrangement of the heating PjA of the planar bake/cooler and the cooling source may be changed depending on the situation. The planar baking/cooling device in the rinsing I/processing H position is configured to face the resist surface (surface) on the substrate to be processed.
A planar baking/cooling device may be further added in such a manner that it faces the surface of the substrate to be processed (11th surface) opposite to the resistive surface in parallel at a predetermined interval.

To add the major features of the above equipment, the bake/cold IJ1
Processing is now possible with a miniaturized single-SAM instead of the traditional large oven and large cooling area. Since the transport and movement of one processed substrate is carried out automatically and in a narrow space, the adhesion of dust to the resist-coated substrate is greatly reduced and the product yield is improved.

Incidentally, such a resist processing apparatus can be incorporated into any exposure apparatus.

[Brief explanation of drawings]

FIG. 1 is a flowchart schematically showing a conventional resist pattern forming process, and FIG. 2 is a schematic diagram showing an isothermal curve showing how each point on the substrate to be processed changes by degrees after resist baking in the conventional process. FIG. 3 is a characteristic diagram showing the state of the temperature change as a time versus temperature curve. FIG. 4 is a flowchart schematically showing the rinsing pattern forming process according to the present invention, and FIG. 5 is a resist pattern forming process according to the present invention]
~Characteristics diagram showing the 2gi degree change of the substrate during cooling, Figure 6 (a
) (b) is a characteristic diagram regarding the resist sensitivity obtained by the method of the present invention, FIG. 7 is a schematic configuration diagram showing an example of a resist processing apparatus suitable for carrying out the method of the present invention, and FIG.
1 to 12 are enlarged views showing the main structure of the above-mentioned apparatus. 71a ~ 71cm@processed substrate, 72a ~ 72b...
Cassette 1-173a to 73b...belt conveyor, 7
4a to 74b... Vacuum chuck carrier, 75... Bale/cooler, 76... Substrate supporter, 81... Substrate to be processed, 82... Substrate supporter, 83... heating/cooling source, 84... heating source, 85... cooling source, 91...
Small hole, 92... Heating tube, 93... Cooling tube, 101.
... Cooling pipe, 102 ... Heating pipe with built-in heater, 111
...Substrate to be processed, 112...Substrate support, 113.
...Heating/cooling source, 114...Heating source tube, 115.
...Cooling source pipe, 121...Heating source opening, 122.
...Opening for cooling source. Applicant's agent Patent attorney Takehiko Suzue Figure 6 (a) (b) Rapid shore support Y Kaito Onjin'rm (''c) - Figure 7 Figure 8 Figure 9 Figure 101°4 Figure 11 Figure 12rg4

Claims (7)

[Claims] (1) Covered by 9! l Ig; Apply a film to the resist 1 on the m plate, pre-bake it, and apply electromagnetic waves of a predetermined wavelength or a predetermined Nerky particle beam to the above-resist IQ.
In the method of forming a pattern on the resist 1 by selectively exposing the resist film to light Q4 and performing a development process, The resist film is baked at a predetermined glass transition temperature T (predetermined value T0 or higher) of 8 degrees -1-b, and then the resist film is uniformly cooled from the concentration Tb to an arbitrary intermediate temperature Tl+, and then the resist film is (intermediate) temperature T
11 A resist pattern forming method that removes mold by rapidly and uniformly cooling the temperature Tc from 11 to 11. (2) Each of the above 2FA degree-ro, T11. 'rm,
2. The resist pattern forming method according to claim 1, wherein Tc satisfies the relation 1IFl such that 11≧1−i≧■su>TC. (3) Pre-development baking and subsequent cooling of the resist film after exposure are performed at the same location without moving the resist film-coated substrate. The method for forming a resist I pattern according to item 2. (4) In a resist processing apparatus that performs cold FJI after baking a resist film coated on a substrate to be processed, there is a substrate support that supports the substrate, and a substrate that is installed on the top of the support and that is attached to the support. Illuminating infrared light onto the supported substrate 11J
Alternatively, a baking mechanism that blows hot air to bake the resist film on the substrate at a temperature equal to or higher than the glass transition temperature Tg of the resist, and a baking mechanism that is provided above the support and blows cold air onto the substrate supported by the support. 1. A resist processing apparatus comprising: a cooling mechanism for cooling a resist hood on a substrate, and continuously baking and cooling the resist film. (5) The bake 1i 1411 is composed of a linear heater, the cooling mechanism is composed of a linear cold air introduction pipe having a plurality of cold air blowing holes below, and the heater and the cold f
5. The resist processing VR@ according to claim 4, wherein the fl introduction tubes are alternately arranged in parallel in a plane facing the surface of the substrate supported by the support. (6) The baking mechanism consists of a straight hot air introduction pipe having a plurality of hot air blowing holes at the bottom, and
consists of a straight cold air introduction pipe having a plurality of cold air blowing holes at the bottom, and the above-mentioned heat IN! Claim 4, characterized in that the introduction pipes and the cold air introduction pipes are alternately arranged in parallel within a plane facing the surface of the substrate supported by the support.
The resist processing apparatus described in . (7) The baking mechanism includes a plurality of hot air outlets,
The cooling mechanism includes a plurality of cold air outlets, and the hot air outlets and the cold air outlets are arranged alternately in a matrix in a plane facing the surface of the substrate supported by the support. A resist processing apparatus according to claim 4.