JPS60173828A - Forming method of multilayer film - Google Patents
Forming method of multilayer filmInfo
- Publication number
- JPS60173828A JPS60173828A JP2458784A JP2458784A JPS60173828A JP S60173828 A JPS60173828 A JP S60173828A JP 2458784 A JP2458784 A JP 2458784A JP 2458784 A JP2458784 A JP 2458784A JP S60173828 A JPS60173828 A JP S60173828A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- silicon oxide
- multilayer film
- film
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 37
- 239000011261 inert gas Substances 0.000 claims abstract description 23
- 239000001257 hydrogen Substances 0.000 claims abstract description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910052786 argon Inorganic materials 0.000 claims abstract description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 150000002500 ions Chemical class 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 125000004429 atom Chemical group 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 2
- 241000256602 Isoptera Species 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 238000007493 shaping process Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- -1 norgon Chemical compound 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明の分野
本発明は、基板上に、シリコンでなる第１の膜と、酸化
シリコンでなる第２のｌＩ’Ａとが順次交互に積層され
−Ｃいる構成の多層膜を形成Ｊる方法に関し、特にこの
ような構成の多層Ｉ＋！、！を超格子構造どして有して
いる超格子構造半導体装置を製造りる場合に適用して好
適なものである。Detailed Description of the Invention Field of the Invention The present invention relates to a structure in which a first film made of silicon and a second film made of silicon oxide are sequentially and alternately laminated on a substrate. Regarding the method of forming a multilayer film, especially the multilayer I+! ,! This is suitable for application when manufacturing a superlattice structure semiconductor device having a superlattice structure.
本発明の青用
従来、基板上に、シリコンでなる第１の膜と、酸化シリ
」ンでなる第２の膜とが順次交互に積層され（−いる（
１“４成の多層膜を超格子構造として有し−Ｃいる超格
子構造半導体装置が提案されている。For the blue color of the present invention, conventionally, a first film made of silicon and a second film made of silicon oxide are sequentially and alternately laminated on a substrate.
A semiconductor device with a -C superlattice structure has been proposed, which has a multilayer film of 1"4 as a superlattice structure.
、した、このような超格子（？４造半導体装置の超格子
（１４造どしての多層膜を形成する方法とじて、従来、
次に述べる方法が提案されている。Conventionally, as a method for forming a multilayer film using such a superlattice (?4-structured superlattice (14-structured semiconductor device)),
The following method has been proposed.
リイに４つら、導電性ヂ１７ンバ内に、例えばその上方
位置にＪ３いて第１及び第２の電極を配し、下方位置に
Ｊ３いて第３の電極を配している構成を有り−るスパッ
タリング装置を用い、そして、その導電性チャンバ内に
おいて、第１の電極上にシリコンでなる第１のターグツ
１〜を配し、また、第２の電極上に酸化シリコンでなる
第２のターグツ１−を配し、ざらに、第３の電極上に基
板とを配した状態で、且つ導電性チャンバ内にアルゴン
でなる不活性ガスを導入した状態Ｃ・、第１のターグツ
１−を配している第１の電４４ｉと基板を配している第
２の電極とに、導電性チトンバを基準と覆る高周波電源
または直流電源を印加させて、導電性チャンバ内Ｃ゛不
話性カスを放電させ、その放電によって得られる不活性
ガスのイオンによって、第１のターグツｌ−１）ｔ Ｉ
ら、ぞれを構成している原子（シリコン）をスパッタリ
ング（放電）さゼて、基板上にシリコンでなる第１の肱
を堆積形成ザることと、第２のターゲットを配している
第１の電極と基板を配し−（いる第２の電極とに、導電
性チャンバを基準とする高周波電源または直流電源を印
加させて、導電性チャンバ内で不活性カスを放電さけ、
その放電によって得られる不活性カスのイオンによって
、第２のターゲットから、それを構成している原子（シ
リコン及び酸素）をスパッタリング（放電）さけて、基
板上に酸化シリコンでなる第２の膜を堆積形成すること
とを順次交互に繰返し０行い、基板上に目的する半導体
装置を形成Ｊる。There is a configuration in which the first and second electrodes are arranged in the conductive member 17, for example, the first and second electrodes are arranged in the upper position, and the third electrode is arranged in the lower position. Using a sputtering device, in the conductive chamber, a first target 1 made of silicon is disposed on a first electrode, and a second target 1 made of silicon oxide is disposed on a second electrode. - is arranged, and the substrate is roughly arranged on the third electrode, and an inert gas consisting of argon is introduced into the conductive chamber.C., the first target 1- is arranged. A high frequency power source or a direct current power source covering the conductive titanium as a reference is applied to the first electrode 44i on which the substrate is placed and the second electrode on which the substrate is placed, thereby discharging the non-talking scum in the conductive chamber. and the ions of the inert gas obtained by the discharge cause the first target l-1) t I
The atoms (silicon) constituting each are sputtered (discharged) to deposit a first layer of silicon on the substrate, and a second layer containing a second target is deposited on the substrate. A high frequency power source or a direct current power source with reference to the conductive chamber is applied to the second electrode, in which the first electrode and the substrate are disposed, and the inert scum is discharged in the conductive chamber,
The ions of the inert gas obtained by the discharge avoid sputtering (discharge) the constituent atoms (silicon and oxygen) from the second target and form a second film of silicon oxide on the substrate. The deposition and formation are sequentially and alternately repeated to form a desired semiconductor device on the substrate.
このような多層ＩＩ９の形成法によれば、スパッタリン
ク装置の１つの導電性ヂＡ・ンバ内で、ぞれを聞りるこ
となしに、シリコンでなる第１の膜と、酸化シリコンで
゛なる第２の股とを、順次交互に、連続的に、堆積形成
ηることができるので、層数の多い多層膜を容易に形成
Ｊることがてさる、という特徴を有りる。According to such a method of forming the multilayer II9, the first film made of silicon and the first film made of silicon oxide are formed in one conductive member of the sputter link device without hearing each other. Since the second crotch can be deposited and formed sequentially and alternately, a multilayer film with a large number of layers can be easily formed.
しかしながら、上述した不活性ガスとしてアルゴンを用
いる従来の多層膜の形成法の場合、多層膜を、その相隣
るシリ、コンでなる第１の膜と、酸化シリコンでなる第
２の膜との間の境界がより高い鮮明度を有し、且つシリ
コンでなる第１の膜及び酸化シリコンでなる第２の膜の
厚さがより高い均一性を有するものに形成されるのに一
定の限１哀を有していた。However, in the case of the conventional multilayer film formation method using argon as the inert gas mentioned above, the multilayer film is formed by forming a multilayer film between the adjacent first film made of silicon and silicon and the second film made of silicon oxide. Within a certain limit 1, the boundaries between the first film of silicon oxide and the second film of silicon oxide are formed to have a higher definition and a higher uniformity in thickness. He had sadness.
ちなみに、上述した不活性ガスとしてアルゴンを用いる
従来の多層膜の形成法によって、シー−−リコンでなる
第１の膜と、酸化シリコンでなる第２の膜とが、それら
の厚さの和を約９１１１１とりる厚さに、順次交互に、
それぞれ４０枚づつ積層されている構成の多層膜を形成
し、その多層膜につい−Ｃ１その相隣るシリコンでなる
第１の膜と、酸化シリコンでなる第２の膜との間の境界
の鮮明度を調べる！こめに、低角度Ｘ線回折特性を測定
したところ、その特性が、横軸を回折角２θ（度）どじ
、枢軸に強度（Ｘ１０’ＣＰＳ）としている第１図に示
Ｊにうに、相隣るシリコンでなる第′１の膜と、酸化シ
リ」ンでなる第２の膜との間の境界の鮮明度をシリコン
でなる第′１の膜及び酸化シリコ１ンー（・なる第２の
膜の厚さとどもに示１回析スペク１ヘルを、実質的に、
観察し得４１いｂのとして得られた。By the way, by the conventional multilayer film formation method using argon as the inert gas mentioned above, the first film made of silicon silicon and the second film made of silicon oxide have a thickness equal to the sum of their thicknesses. To a thickness of about 91111, alternately,
A multilayer film with 40 layers each is formed, and for the multilayer film - C1 the sharpness of the boundary between the adjacent first film made of silicon and the second film made of silicon oxide. Check the degree! When we measured the low-angle X-ray diffraction characteristics, we found that the characteristics were similar to those shown in Fig. The sharpness of the boundary between the first film made of silicon and the second film made of silicon oxide is With the thickness of 1 diffraction spec 1 Her, substantially,
Obtained as 41b.
本発明の開示
にって、本発明は、基板上に、シリ」ンでなる第１の膜
と、酸化シリコンでなる第２の膜とが順次交互に積層さ
れている構成の多層膜を、その相隣るシリコンでなる第
１の膜と、酸化シリコンでなる第２の膜との間の境界が
、上述した不活１イ１ガスどしてアルゴンを用いる従来
の多層膜の形成法の場合に比しより高い鮮明度を有し、
１１つシリコンでなる第１の膜及び酸化シリコンＣ・ム
る第２の膜の厚さが、上述した従来の多層１１分の形成
法の場合に比しより高い均−外布するｂのとして、容易
に、形成づることができる、新規な多層膜の形成法を提
案せんとするものひある。According to the disclosure of the present invention, the present invention provides a multilayer film having a structure in which a first film made of silicon and a second film made of silicon oxide are sequentially and alternately laminated on a substrate. The boundary between the adjacent first film made of silicon and the second film made of silicon oxide is formed using the conventional multilayer film formation method using argon as the inert 1-1 gas described above. It has higher clarity than in the case of
As the thickness of the first film made of 11 silicon and the second film made of silicon oxide is higher and more uniform than in the case of the above-mentioned conventional multi-layer 11-minute formation method. We are trying to propose a new method for forming a multilayer film that can be easily formed.
本発明にＪ、る多層膜の形成法によれば、上述した従来
の多層膜形成法の場合と同様に、シリコンでなる第１の
ターゲットと、酸化シリコンでなる第２のターグツ１〜
とから、不活性ガスのイオンを用いて、第１のターグツ
ｉ〜を構成しているＩＩ；ミＪ″（シリコン）と、第２
のターゲットを構成しＣいる原子（シリコン及び酸素）
どを順次交Ｈにスパッタリングさせることによって、基
板１−に、シリコンでなる第１の膜と、酸化シリコンで
なる第２の膜とを順次交互に１ａ積形成さＵ゛（、目的
とする多層膜を形成する。According to the method for forming a multilayer film according to the present invention, as in the case of the conventional multilayer film formation method described above, a first target made of silicon and a second target 1 to 1 made of silicon oxide are used.
From this, using inert gas ions, II;
C atoms (silicon and oxygen) that constitute the target of
By sequentially alternating sputtering, a first film made of silicon and a second film made of silicon oxide are sequentially and alternately deposited on the substrate 1-. Forms a film.
しかしながら、本発明による多層膜の形成法に、ｌＩ３
い−（１よ、上）ホし／Ｊようにシリ」ンでなる第１の
ターグツ１〜と、酸化シリコンでなる第２のターグツ１
〜とｌｐ ｒら、不活性ガスのイＡ−ンを用いＣ１第゛
１のターゲットを構成している原ｆ−と、第２のターグ
ツ１−を構成している原子とを順次交ノｊにスパッタリ
ングさｌる場合に用いる、不活性ガスとしく、上）ホし
た従来の多層膜形成法に用いているノノルゴンに代え、
アルゴンと水素とを含み、水素が１０〜９５−Ｅル％Ｃ
ある１Ｍ合ガスを用いる。However, in the method for forming a multilayer film according to the present invention, lI3
I-(1, top) As shown, the first tags 1~ made of silicon and the second tags 1 made of silicon oxide.
... and lp r et al. used an inert gas ion to sequentially intersect the original f- constituting the first target of C1 and the atoms constituting the second target 1-. In place of nonorgone, which is used in the conventional multilayer film formation method mentioned above, as an inert gas used when sputtering
Contains argon and hydrogen, hydrogen is 10 to 95-El%C
A certain 1M combined gas is used.
なお、混合ガスを１１４成しでいる水素か、１０〜９５
七ル％であるのは、水素が１０七ル％未満では、多層膜
を、その相隣るシリコンでなる第１の膜と、酸化シリコ
ンでなる第２０）膜との間の境界が、不活性ガスとしく
アルゴンを用いている上述した従来の多層膜形成法にに
っで形成される多層膜における同様の境界と同作）印の
鮮明度しか得られず、且つシリコンでなる第１のＩＩＵ
及び酸化シリコンでなる第２の膜の厚さが、不活性ガス
としてアルゴンを用いている上述した従来の多層膜形成
法によって形成される多層膜にａ月ノる同様の厚さと同
程度の均一性しか得られり゛、また、水素が９５モル％
を越えれば、シリ−１ンｅなる第１の膜及び酸化シリコ
ンでなる第２の膜を形成する速度が極めて遅くなり、従
つ（、多層＋１ｒＡを形成するのに長い時間を要し、実
用的Ｃなくなるからである。In addition, whether the mixed gas is hydrogen containing 114 or 10 to 95
The reason for this is that when the hydrogen content is less than 10%, the boundary between the adjacent first film made of silicon and the 20th film made of silicon oxide is not formed. In the conventional multilayer film formation method described above using argon as the active gas, only the sharpness of the similar boundary in the multilayer film formed with Ni (same work) could be obtained, and the first method made of silicon IIU
and the thickness of the second film made of silicon oxide is as uniform as that of a multilayer film formed by the above-described conventional multilayer film formation method using argon as an inert gas. Only 95 mol% of hydrogen can be obtained.
If this value is exceeded, the speed of forming the first film made of silicon oxide and the second film made of silicon oxide becomes extremely slow, and therefore it takes a long time to form a multilayer +1rA, making it impractical for practical use. This is because the target C disappears.
上述した不発明ににる多層１Ｑの形成法によれば、小話
性ガスとして、アルゴンと水素とを含み、水素が１０〜
９５モル％である混合ガスを用い（いるので、多層膜を
、その相隣るシリコン【゛なる第１の肱と、酸化シリコ
ンでなる第２の１１’、！どの間の境界が、不活性カス
としてアルゴンを用いＣいる上述した従来の多層膜の形
成法の場合に比しより高い鮮明度を有し、旧つシリコン
で／、１：る第１の膜及び酸化シリコンでなる第２の膜
の厚さが、不活性カスとしてアルゴンを用い（いる上述
した従来の多層膜の形成の場合に比しＪζり高い均一性
を有するものとして、容易に、形成Ｊることができる。According to the method of forming the multilayer 1Q according to the above-mentioned invention, the gas contains argon and hydrogen, and the hydrogen is
Using a gas mixture with a concentration of 95 mol %, the multilayer film can be formed by forming a multilayer film with a first layer of silicon oxide and a second layer of silicon oxide. It has a higher definition than the conventional multilayer film formation method described above using argon as the scum. The thickness of the film can be easily formed with higher uniformity than in the case of forming the conventional multilayer film described above using argon as an inert gas.
従っＣ１本発明による多１１゛４膜の形成法は、多層膜
を超格子構造として有している超格子構造半導体装置を
製造り−る場合に適用して、極め−Ｃ好適である。Therefore, the method of forming a multilayer film according to the present invention is extremely suitable for application to the production of a superlattice structure semiconductor device having a multilayer film as a superlattice structure.
本発明の好適なり５例
次に、本発明による多層＋１１Ａ形成法の好適な実施例
を述べよう。Five Preferred Examples of the Present Invention Next, preferred embodiments of the multilayer +11A forming method according to the present invention will be described.
すなわら、導電性チャンバ内に、例えばその−ドプラ位
置において第１及び第２の電極を配し、下方位胃におい
て第３の電極を第１及び第２の電極と平行に配している
構成を有づる平板型高周波マグネ１〜ロンスパツタリン
グ装置〜を用い、そし−Ｃ１その導電性チャンバ内にお
いて、第１の電極上にシリコンでなる第１の一ターゲツ
１〜を配し、また、第２の電極上に酸化シリ」ンとして
の石英ガラスでなる第２のターグツ１−を配し、さらに
、第３の電極上に基板とを配した状態で、ＩＪつ導電性
チャンバ内にアルゴンと水素とからなり、水素が８０モ
ル％である混合ガスを不活４（１４１’フ左進λ」、１
ごツＲ（ｊμで一餡１のターグツ１〜を配している第１
の電極と基板を配している第２の電極とに、導電性チャ
ンバを基準とする高周波電源を印加さばて、導電性チャ
ンバ内で不活性ガス（アルゴンガス及び水素）４放電さ
せ、その放電によって得られる不活性ガス（アルゴン及
び水素）のイオンによって、第１のターグツ１へから、
それを構成している原子（シリコン）をスパッタリング
（放電）させて、基板上にシリコンＣ４ｒる第１の膜を
３．６ｎｍの厚さにｊ「積形成゛りることと、第２のタ
ーグツｉ〜を配している第１の電（〜と基板を配してい
る第２の電極とに、導電性ヂ（・ンバを基準とする高周
波電源を印加さｌ！（、導電性チャンバ内で不活性カス
（アルゴン及び水素）を放電させ、その放電にＪ、つ−
（４ｒ／られる不活性ガス（アルゴン及び水素）のイオ
ンににつて、第２のターグツ１−から、それを４１−１
成しＣいる原子（シリコン及び酸素）をスパッタリング
（放電）さけて、基板上に酸化シリコン（／ｃＫる第２
の膜を１．３１１１１１の厚さに堆積形成Ｊることとを
順次交互に４０回繰返して行い、基板上に、３，６ｎｍ
の厚さを右づるシリコンでなる第１の膜と、１ 、８
ｕ＋の厚さを右りる酸化シリコンでなる第２の膜とが、
順次交Ｈに、４０枚づつ積層されている１」的りる半導
体装置を形成した。that is, a first and a second electrode are disposed within the conductive chamber, e.g., in the -Doppler position, and a third electrode is disposed parallel to the first and second electrodes in the inferior stomach. Using a flat plate-type high-frequency magnet 1 having the configuration of -Lon sputtering device, a first target 1 made of silicon is placed on the first electrode in the conductive chamber of -C1, and, With a second electrode made of quartz glass as silicon oxide placed on the second electrode, and a substrate placed on the third electrode, argon gas is placed in an IJ conductive chamber. and hydrogen, and the hydrogen is 80 mol%.
Gotsu R
A high frequency power source with reference to the conductive chamber is applied to the electrode and the second electrode on which the substrate is disposed, and an inert gas (argon gas and hydrogen) is discharged in the conductive chamber. from the first target 1 by ions of inert gas (argon and hydrogen) obtained by
By sputtering (discharging) the atoms (silicon) constituting it, a first film of silicon C4r is deposited on the substrate to a thickness of 3.6 nm, and a second film is deposited on the substrate. A high frequency power source with reference to the conductive chamber is applied to the first electrode (~ on which the i~ is disposed) and the second electrode on which the substrate is disposed. The inert gas (argon and hydrogen) is discharged at J,
(4r/For the ions of inert gas (argon and hydrogen), it is transferred from the second target 1- to 41-1
A second layer of silicon oxide (/cK) is deposited on the substrate, avoiding sputtering (discharge) of the atoms (silicon and oxygen) forming the structure.
A film of 3.6 nm thick was deposited on the substrate by repeating this process alternately 40 times.
a first film made of silicon having a thickness of 1 and 8;
A second film made of silicon oxide whose thickness depends on u+ is
A 1" semiconductor device was formed by sequentially stacking 40 semiconductor devices in an alternating pattern.
不活性ガスとしＣ、ノｌルゴンと水素とからなり、水素
が８０１Ｘ−ル％である混合ガスを用いた本実施例にに
って形成された多層膜についで、その相隣るシリコンで
なる第１の膜と、酸化シリコンＣ′４「る第２の膜との
間の境界の鮮明度を調べるために、低角度Ｘ線回折特性
を測定したどころ、その特性が、第１図に対応している
第２図に示づように、相隣るシリコンでなる第１の膜と
、酸化シリコンでなる第２の膜との間の境界の鮮明度を
シリコンでなる第１の膜及び酸化シリコンで４する第２
の膜の厚さととしに示り回折スペクトルを、シリコンで
なる第１の股と、酸化シリ−１ンＣ゛なる第２の膜との
１９さの和５）。Next to the multilayer film formed according to this example using a mixed gas consisting of carbon, norgon, and hydrogen as an inert gas, in which hydrogen is 801xle%, the next layer is made of silicon. In order to investigate the sharpness of the boundary between the first film and the second film made of silicon oxide, low-angle X-ray diffraction characteristics were measured, and the characteristics corresponded to those shown in Figure 1. As shown in Figure 2, the sharpness of the boundary between the adjacent first film made of silicon and the second film made of silicon oxide is 2nd to 4 with silicone
The thickness of the film and the diffraction spectrum shown below are the sum of 19 and the thickness of the first film made of silicon and the second film made of silicon oxide 5).
４１１ｍに対応する１次、２次及び３次の回折ピークＩ
）１、Ｐ２及びＰ３を以て、顕署に観察し１；ｌるらの
どして得られた。1st, 2nd and 3rd order diffraction peaks I corresponding to 411m
) 1, P2 and P3 were observed in the laboratory and 1;1 was obtained.
この第２図に示す低角度Ｘ線回折特性と、第１図に承り
低角度Ｘ線回折特性とを対比するところから６明らかな
ように、不活性ガスとして、アルゴンと水素とからなり
、水素が８０モル％ひある程合ガスを用いた本実施例に
よれば、多層膜を、ぞの相隣るシリコンでなる第１の膜
と、酸化シリコンひなる第２の膜との間の境界が不活性
ガスとしてアルゴンを用いる従来の多層膜形成法の用台
に比し高い鮮明度を右し、且つシリコンでなる第１の膜
と、酸化シリコンでなる第２の膜の厚さが、不活性ガス
としてアルゴンを用いる従来の多層膜形成法の場合に比
しより均一１１１をイｊＪるものとして得られた。As is clear from comparing the low-angle X-ray diffraction characteristics shown in Figure 2 with the low-angle X-ray diffraction characteristics shown in Figure 1, the inert gas is composed of argon and hydrogen. According to this example, a multilayer film is formed by forming a boundary between a first film made of silicon and a second film made of silicon oxide, which are adjacent to each other. provides higher definition than the conventional multilayer film formation method using argon as an inert gas, and the thickness of the first film made of silicon and the second film made of silicon oxide is A more uniform layer of 111 was obtained than in the case of a conventional multilayer film formation method using argon as an inert gas.
第′１図は、従来の多層膜形成法の説明に供す−る、そ
の多層膜形成法によって形成された多層膜につい（、そ
のシリコンでなる第１の膜と、酸化シリコンでなる第２
の膜との間の境界の鮮明１．σど、シリコンでなる第１
の膜及び酸化シリコンでなる第２の膜の厚さの均一性と
を調べるために測定した低角度Ｘ線回折特性を示Ｊ図で
ある。
第２図は、本発明による多層１模形成法の説明に供りる
、その多層膜形成法の実施例によつＣ形成された多層膜
について、そのシリコンでなる第１の膜と、酸化シリコ
ンでなる第２の膜との間の境界の鮮明度と、シリコンで
なる第１の膜及び酸化シリコンでなる第２の膜の厚さの
均一性とを調べるために測定した低角ｊａＸ線回折特性
を示１図で゛ある。
１）１．１〕２．１”３・・・・・・・・・回折ピーク
出願人 １」本電信電話公社
第１図
回訂角２８（友）
第２図
回哲角２θａυFIG.
Sharpness of the boundary between the membrane 1. σ, the first made of silicon
FIG. 4 is a J diagram showing low-angle X-ray diffraction characteristics measured to examine the uniformity of the thickness of the film and the second film made of silicon oxide. FIG. 2 shows a first film made of silicon and a multilayer film formed by C according to an embodiment of the multilayer film forming method according to the present invention. Low-angle JA Figure 1 shows the diffraction characteristics. 1) 1.1] 2.1" 3... Diffraction peak applicant 1" Telegraph and Telephone Corporation Figure 1 Revision angle 28 (Friend) Figure 2 Revision angle 2θaυ
Claims (1)
なる第２のターグツｌ−とから、不活性ガスのイΔンを
用いて、」二記第１のターグツ１〜を構成している原子
と、上記第２のターゲットを４ｆ４成している原子とを
順次交互にスパッタリングさせることによって、基板上
に、シリコンでなる第１の膜と、酸化シリコンでなる第
２の膜とを順次交互に堆積形成さぼる多層膜形成法にお
いて、 上記不活性ガスどして、アルゴンと水素とを含み、水素
が１０〜９５モル％である混合カスを用いることを特徴
と覆る多層膜形成法。[Claims] From the first terminus 1~ made of silicon and the second termite 1~ made of silicon oxide, using an inert gas ion, the first termite 1~ By sequentially and alternately sputtering the atoms constituting the 4F4 and the atoms constituting the second target, a first film made of silicon and a second film made of silicon oxide are formed on the substrate. A multilayer film forming method in which films are sequentially and alternately deposited, wherein the inert gas is a mixture of argon and hydrogen, and the hydrogen content is 10 to 95 mol %. Formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2458784A JPS60173828A (en) | 1984-02-13 | 1984-02-13 | Forming method of multilayer film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2458784A JPS60173828A (en) | 1984-02-13 | 1984-02-13 | Forming method of multilayer film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60173828A true JPS60173828A (en) | 1985-09-07 |
Family
ID=12142287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2458784A Pending JPS60173828A (en) | 1984-02-13 | 1984-02-13 | Forming method of multilayer film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60173828A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6448577B1 (en) | 1990-10-15 | 2002-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with grain boundaries |
-
1984
- 1984-02-13 JP JP2458784A patent/JPS60173828A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6448577B1 (en) | 1990-10-15 | 2002-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with grain boundaries |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH03234025A (en) | Method of forming insulating thin film | |
| TWI225268B (en) | Plasma display panel | |
| CN105336870B (en) | Flexible base board and its manufacture method | |
| US3579063A (en) | Thin film capacitor | |
| JPH09246017A (en) | Laminated chip varistor and manufacture thereof | |
| JPS60173828A (en) | Forming method of multilayer film | |
| Dey et al. | Antisite-disorder engineering in La-based oxide heterostructures via oxygen vacancy control | |
| JPH05127014A (en) | Black mask for color filter | |
| US4107568A (en) | Face plate for color pick-up tube | |
| TWI239937B (en) | Glass plate provided with electrodes made of a conducting material | |
| JP2006120356A (en) | Plasma display panel and its manufacturing method | |
| JPH07235381A (en) | Thin film EL device | |
| JPS63241846A (en) | Heat-proof black electrode | |
| EP0109589A1 (en) | Electroluminescent thin film display device | |
| KR960706684A (en) | Stacked-type component and method for the manufacture of same | |
| JP2000106304A (en) | Laminated chip thermistor and its manufacture | |
| JPH07272858A (en) | Electroluminescent element and its manufacture | |
| JPH0995769A (en) | Dielectric thin film and thin film magnetic device | |
| JP2703809B2 (en) | Method for manufacturing thin film EL element | |
| JPS60131965A (en) | Target device for sputtering | |
| JPS6269489A (en) | Manufacturing thin film el element | |
| JPH04212238A (en) | Thin film phosphor and manufacture thereof | |
| JPS6142895A (en) | Thin film el panel | |
| JPH04284665A (en) | Semiconductor device and its manufacturing method | |
| JPH05152075A (en) | Thin film el element and manufacture thereof |