JPS60170626A - Electrically conductive paste composition for electronic part - Google Patents

Abstract

PURPOSE:The titled composition, obtained by incorporating a polyimide based resin precursor prepared by reacting a specific organic diamine with an organic tetracarboxylic acid dianhydride, etc., an organic solvent and an electrically conductive filler. CONSTITUTION:An electrically conductive paste composition obtained by kneading (A) a polyimide based resin precursor prepared by reacting (i) an organic diamine consisting of 80-100mol% aromatic tetranuclear diamine of formula I (R1 and R2 are H, 1-4C alkyl or CF3; R3-R6 are H, halogen or 1-4C alkyl) and (ii) 0-20mol% diaminosiloxane of formula II (R7 and R8 are bivalent organic group; R9-R12 are monovalent organic group; n is an integer >=1) with (ii) an organic tetracarboxylic acid dianhydride or a derivative thereof, e.g. biphenyltetracarboxylic acid dianhydride, with (B) an organic solvent and (D) an electrically conductive filler, e.g. silver powder.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a conductive paste composition for electronic components used as a conductive adhesive, an electrode material, etc.

Recently, in the assembly of semiconductor devices, adhesives for bonding and fixing semiconductor elements to conductive layers formed on ceramic substrates or aluminum substrates, or substrates made of stems, lead frames, etc. Polyimide silver pastes using polyimide resin as a binder have come into use. This polyimide-based silver paste is more heat resistant than the epoxy resin silver paste that uses epoxy resin as a binder, which has traditionally been used as this type of adhesive.

An adhesive layer made of cured silver paste with excellent moisture resistance can be formed.

However, when this polyimide-based silver paste is used, unless the thickness of the adhesive layer is 5 to 20μ or less, sufficient adhesive force necessary for the above-mentioned adhesive fixation cannot be obtained. The drawback was that it was difficult to form a film. This is because in a cured silver paste product formed from a polyimide silver paste, a part of the polyimide resin turns into particles in the thick film part where the thickness exceeds the above range and takes on a powdered state, and is not used as a binder. This is because it does not fulfill its function. That is, since the strength of the thick film portion of the cured silver paste product was reduced, the cohesive force of the adhesive layer was reduced.

The inventors believe that if the thick film forming properties of the polyimide silver paste as described above can be improved, it will not only be possible to thicken the adhesive layer formed using this silver paste, but also increase the thickness of the adhesive layer formed using this silver paste. We thought that it would be possible to expand its use as a conductive resin by taking advantage of its excellent heat resistance and moisture resistance. Therefore, as a result of intensive studies aimed at providing a polyimide-based conductive paste with improved thick film formation properties, the present invention was completed.

That is, the present invention provides a paste-like material obtained by kneading a conductive photonic agent such as silver powder with an organic solvent into a polyimide resin precursor, wherein the polyimide resin precursor has the following formula (1). ;(However, in the formula, R,, R2 is hydrogen,
Alkyl group having 1 to 4 carbon atoms or CF3 group, R3,R
4, R5, R6 are hydrogen, halogen atom, or carbon number 1-
4 shows the alkyl group. ) 80 to 100 mol% of the aromatic tetranuclear diamine represented by the following formula (2); Middle R,, R8 is a divalent organic group, R9+ R10+RIf
+ R12 represents a monovalent organic group, and n represents an integer of 1 or more.

A conductive paste composition for electronic components, characterized in that it is obtained by reacting an organic diamine consisting of 0 to 20 mol% of diaminosiloxane represented by ) with an organic tetracarboxylic dianhydride or a derivative thereof. This is related to.

In addition, R1 and R2, R3, R4, R5 and R6, R7 and R8 in the above formula (1) and formula (2)
, R9r R10HR1+ and R12 may be the same or different from each other.

The electrically conductive paste composition for electronic components of the present invention is a polyimide electrically conductive paste with improved thick film forming properties.

That is, in the silver paste cured product layer formed from the conventional polyimide-based silver paste, the strength decreased when the thickness exceeded about 20 μm, but the conductive paste cured product formed from the conductive paste composition of the present invention The layer usually has sufficient strength up to a thickness of about 1 to 5 mm.

Thus, according to the conductive paste composition of the present invention, it is possible to form a thick layer of cured conductive paste that has excellent strength (adhesion) as well as its original conductive function, heat resistance, and moisture resistance. This paste composition can
As a conductive resin, it can be used not only as an adhesive for die bonding, but also as an electrode material or an electrode material/adhesive, and its uses have been expanded for electronic parts.

The organic diamine used in the synthesis of the polyimide resin precursor in this invention includes aromatic tetranuclear diamine represented by the above formula (1) and diaminosiloxane represented by the above formula (2) in a specific ratio. is used.

Specific examples of the aromatic tetranuclear diamine include 2.2-
Bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[3-methyl-4(4-aminophenoxy)phenyl]propane, 2,2-bis[3-chloro-4-(4- aminophenoxy)phenyl]propane,
1,1-bis[4-(4-aminophenoxy)phenyl]ethane, 1,1-bis[3-methyl-4-(4-aminophenoxy)phenylcomethane, 1,1-bis[3-
Chloro-4-(4-aminophenoxy)phenyl]ethane, 1,1-bis[3,5-dimethyl-4-(4-aminophenoxy)phenyl]ethane, bis[4-(4-aminophenoxy)phenyl]ethane Methane, bis[3-methyl-4-(4-aminophenoxy)phenylcomethane, bis[3-chloro-4-(4-aminophenoxy)phenyl]ethane, bis[3,5-dimethyl-4-(4 -aminophenoxy) phenylcomethane and the like.

In this invention, one or more of these aromatic tetranuclear diamines are contained in an amount of 80% of the total amount of organic diamines.
It is used in a proportion of ~100 mol%.

If this usage ratio is less than 80 mol%, it is not suitable because the thick film forming properties of the conductive paste composition will deteriorate.

In addition, the above aromatic tetranuclear diamine accounts for 10 mol% of the
up to, particularly preferably up to 5 mol %, of other silicon-free diamines can be substituted. If this amount is too large, the thick film forming properties of the paste composition will deteriorate, which is not preferable.

Examples of silicon-free diamines having the above properties include meta-phenylene diamine, para-phenylene diamine, aromatic mononuclear diamine, 4,4'-diaminodiphenylmethane, 4,4
-diaminodiphenyl ether, 2,2'-bis(4-
aminophenyl) p0/similar, 3°3-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfide, benzidine, benzidine-3,3'-disulfonic acid,
Aromatic dinuclear diamines such as benzidine-3-monosulfonic acid, benzidine-3-monosulfonic acid, 3,3'-dimethoxypenzidine, 4,4"-diamino-p-terphenyl, ■-4- Bis(m-aminophenoxy)benzene, 1,4-bis<p-aminophenoxy)benzene, 1,4-bis(m-aminophenylsulfonyl)benzene, 1,4-bis(p-aminophenylsulfonyl)benzene, ■ Aromatic trinuclear diamines such as 4-bis(m-aminophenylthioether)benzene, 1,4-bis(p-aminophenylthioether)benzene, 4
・4'-diaminodiphenyl ether-3-carbonamide, 3,4-diaminodiphenyl ether-4-carbonamide, 3,4'-diaminodiphenyl ether-
Examples include aromatic diamine compounds such as diaminocarbonamide compounds such as 3'-carbonamide and 3,3'-diaminodiphenyl ether-4-carbonamide, aliphatic diamines, and alicyclic diamines.

Specific examples of the diaminosiloxane include the following compounds, and one or more of these may be used in the present invention.

CH3CH3 CH3CH3 C6H5C6H5 CH3CH3 CH3CH3CH3 When the conductive paste composition obtained by using these diaminosiloxanes is used as an adhesive for bonding, the diaminosiloxanes will bond the semiconductor element and the conductive paste cured product. Since the adhesion of the interface is improved, the reliability of the semiconductor device can be further improved. However, the amount of this diaminosiloxane used is 20 mol% or less, preferably 1 to 4 mol%, in the organic diamine. If the proportion of diaminosiloxane used exceeds 20 mol %, it is unsuitable because it causes a decrease in moisture resistance when used in electronic parts or a decrease in heat resistance and strength of the polyimide resin.

Examples of the organic tetracarboxylic dianhydride or its derivative used in the synthesis of the polyimide resin precursor in this invention include pyromellitic dianhydride, 3, 3, 4,
4'-benzophenonetetracarphonic dianhydride, 3.
3', 4, 4'-biphenyltetracarboxylic dianhydride, 2, 3, 3', 4-biphenyltetracarboxylic dianhydride, 2, 3, 6, 7-naphthalene tetracarboxylic dianhydride, 1・2,5,6-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,2'-bis(3,4-dicarboxyphenyl)propanihydride, Bis(3,4-dicarboxyphenyl)sulfone dianhydride, 3,4,9,10-diarylenetetracarboxylic dianhydride, bis(3,4-dicarboxyphenyl)ether dianhydride, 2,2'-bis (
dicarboxyphenyl)propanihydride, 1,1'-
Bis(2,3-dicarboxyphenyl)ethane dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 2,3,6,7-anthracenetetracarboxylic dianhydride, 1,2 - One or more of organic tetracarboxylic dianhydrides such as 7,8-phenanthrenetetracarboxylic dianhydride and derivatives thereof such as halides or lower dialkyl esters are used.

Among these, when 3,3,4,4'-biphenyltetracarboxylic dianhydride is used, the thick film forming property of the conductive paste composition of the present invention is the best.

To synthesize a polyimide resin precursor by reacting the above-mentioned organic tetracarboxylic dianhydride or its derivative with an organic diamine component, it may be carried out according to a conventionally known method, and generally in the presence of an organic solvent. In consideration of polymerization heat generation in a nitrogen gas stream, the temperature is usually 60°C or less, particularly preferably 30°C.
It is preferable to carry out the reaction at a temperature below ℃.

The blending ratio of the organic tetracarboxylic dianhydride or its derivative and the organic diamine used in this synthesis is usually equimolar, but one may be slightly increased if necessary.

Examples of organic solvents used in this synthesis include N-methyl-2-pyrrolidone, N-N-dimethylacetamide, N-N-dimethylformamide, N-N-dimethylsulfoxide, and hexamethylphosphoramide. A highly polar basic solvent is used. All of these types of solvents are highly hygroscopic, and absorbed water causes a decrease in molecular weight during polymerization and storage stability. Therefore, before use, they must be sufficiently dehydrated with a dehydrating agent and, if necessary, distilled. Good to use. Further, general-purpose solvents such as toluene, xylene, benzonitrile, benzene, phenol, and butyl cellosolve can also be used in combination with these solvents. However, the amount used is preferably within a range that does not reduce the solubility of the precursor of the polyimide resin to be produced.

The degree of polymerization of the polyimide resin precursor obtained by the above reaction is preferably such that the viscosity of the conductive paste composition can be adjusted to a range suitable for actual use. Therefore, if the degree of polymerization of the precursor obtained by the above reaction is too high, it is preferable to further heat the reaction solution at 40 to 80° C. and age it to lower the degree of polymerization. The preferred degree of polymerization is expressed by the following formula: % using N-methyl-2-pyrrolidone as a solvent and measuring temperature at 30±0.01°C (constant temperature bath).
(Formula %) t: Fall time to of the polymer solution measured with an Ubbelohde viscometer; Fall time of the solvent measured in the same manner as above.

C: The intrinsic viscosity [η] expressed by the precursor concentration (0.5% by weight) of the polyimide resin is usually about 0.3 to 3.0.

The precursor of this polyimide resin has the following formula (3); (wherein R1, R,, R3, R,, R5 and R6 are as described above, Ar is a tetravalent organic group, Hydrogen, a halogen atom, or a lower alkyl group, which may be the same or different. It may be substituted with the corresponding repeating unit composed of diamine (9 and the following formula (4); (wherein Ar, Xl and X2 are the same as in formula (3), R7+ R8+ R9+ RIOr R11HR
'12 and n are as described above. ) It contains 0 to 20 mol% of repeating units represented by:

In addition, when a mixture of a polymer having a repeating unit represented by the above formula (3) and a polymer having a repeating unit represented by the above formula (4) is used as a precursor of a polyimide resin, the above Since it is difficult to form a completely uniform mixture, the properties of the resulting conductive paste composition vary and good results cannot be obtained.

The conductive paste composition for electronic components of the present invention is obtained by kneading the aforementioned polyimide resin precursor with an organic solvent and a conductive filler to form a paste.

As this organic solvent, those mentioned above as the organic solvent used during the synthesis of the precursor can be used.

Therefore, the organic solvent used when synthesizing the above precursor can be used as is, and may be further diluted after synthesis if necessary. On the other hand, the precursor may be separated from the reaction solution after synthesis of the precursor by reprecipitation in water, dried, and redissolved. The amount of this organic solvent is usually about 10 to 90% by weight, preferably about 15 to 70% by weight based on the total amount of the precursor and the organic solvent. .

The conductive filler used in this invention includes:
Au, Ag, Pd, Pt, Mn, Cu
, N i , AI! , Sn.

Metal powder such as Fe, Co, Cr or alloy powder thereof,
Or RuO2, CrO2, Zn015J102 +
Fe2O3+In2O3+PdO, Tl2O3, Ir0
3. PhO,5b203. One or more of oxide powders such as Bi2O3 and CdO are used. Carbon, graphite, and carbon black can also be used in combination. However, preferred is Ag powder or a mixed powder of Ag and Pd. These conductive fillers have various shapes depending on the manufacturing method, and examples include dendritic materials, scaly powders, spherical powders, porous materials, and acicular powders. Preferably dendritic,
It is better to use scaly powder. The particle size of these conductive fillers is generally 100 mesh free pass, preferably 325 mesh free pass.

The amount used is usually 60 to 95% by weight based on the solid content of the entire composition,
It is preferably 70 to 90% by weight.

A good method for kneading the conductive filler into the solution of the polyimide resin precursor is to use a dispersing machine such as a three-roll mill or a ball mill.
Moreover, it is preferable to use three rolls with good collection efficiency to disperse the two crosstalks. For this crosstalk, various optional components such as silane coupling agents and polysiloxane are added as necessary to improve the adhesion between the cured paste and adherends such as semiconductor elements and external supports. There is no problem. Furthermore, in order to improve the thixotropy of the conductive paste composition, additives typified by surfactants may be used as necessary.

When such a conductive paste composition is applied to an adherend, dried to remove the organic solvent, and then heated to a high temperature, the precursor of the polyimide resin undergoes an intramolecular ring-closing reaction (
A conductive layer is formed from a cured paste in which a conductive filler and optional components are dispersed and bonded in the cured product (polyimide resin). The strength of this conductive layer does not decrease as long as its thickness is usually about 5 urns or less. For example, when the conductive layer is provided as an adhesive layer for bonding a semiconductor element and a lead frame, the thickness of this layer is within the above range, the adhesive strength measured by a push-pull gauge is usually 200 to 30
0KFI/, ffl, and exhibits sufficient adhesive strength as a die bonding adhesive.

As described above, the isoelectric paste composition of the present invention can form a cured paste layer that has excellent strength (adhesion) as well as its original conductive function, heat resistance, and moisture resistance, and is therefore suitable for use in electronic components. It is extremely useful for various applications requiring these properties. That is, this conductive paste composition can be used for hybrid ICs and monolithic ICs.
It can be used as an adhesive for die bonding, or as an electrode material in the field of chip components such as chip capacitors and chip resistors, where conventionally only inorganic silver pastes such as low-melting point glass frit silver paste could be used, or as conductive materials for fixing crystal resonators. Widely used as adhesive and electrode material, liquid crystal display cell electrode material, etc.

1 to 5 show examples of these uses. 1st
Figure (B) is a plan view of the hybrid IC.
is a sectional view taken along the line I-I. In both figures, 1 is a metal envelope and 2a, 2b, 2c, 2d, 2e are beam-doped pins. 3 is a substrate made of aluminum, alumina, glass epoxy, etc. On this substrate 3, conductive layers 4a,
4b, 4c, 4d, 4e, 4f, 4g.

41 is provided in 4h, 4i, 4j, and 4. These conductor layers are made by coating a paste-like material on a substrate with a conductive filler such as silver, gold, silver-palladium, etc. and a binder of organic polymer and low-melting glass, and after removing the solvent, the temperature is about 700 to 1200°C. It is prepared by firing it.

A semiconductor element 5 is firmly adhesively fixed on the conductor layer 4c by a paste cured layer 6 formed using the conductive paste composition of the present invention.

This adhesion was achieved by providing a predetermined amount of the conductive paste composition on the conductor layer 4c, placing the semiconductor element 5 thereon, and heating and curing (imidizing) the composition. 7a, 7b- are other conductor layers 4b, 4d
a bonding wire for electrically connecting with the
8b and 8c are chip components such as resistors, capacitors, and diodes.

9 is a heat sink on which the substrate 1 is placed, and on this heat sink 9,
A conductor layer 1o electrically connected to the conductor layer 4a by a wire 11 is provided for grounding. 11 is a sealing resin made of epoxy resin etc. 12 is a lead pin 2a
This is a resin sealing portion made of epoxy resin or the like for sealing the externally extending portion of ~2c.

FIG. 2 (5) is a plan view of the monolithic IC with the sealing resin layer omitted, and FIG. In both figures, 13 is a lead frame, and a semiconductor element 14 is firmly adhesively fixed onto this lead frame 13 by a paste cured layer 15 formed using the conductive paste composition of the present invention. This bonding is performed in the same manner as the bonding between the conductor layer and the semiconductor element in the hybrid IC described above. The electrode connected to the electrode 18 is a sealing resin layer made of epoxy resin or the like that integrally seals the above-mentioned parts by transfer molding or the like.

FIG. 3 is a cross-sectional view of a chip capacitor.

In the figure, 19 is a ceramic dielectric material mainly composed of BaTiO3, TiO3, etc., and 20 is inorganic silver and gold formed by sintering from a conductive paste composition containing an organic polymer and a low-melting glass as a binder.

This is an internal electrode made of a cured paste such as silver-palladium. Reference numerals 21a and 21b are external electrodes formed by curing the conductive paste composition of the present invention, which are provided so as to connect these internal electrodes in parallel.

This chip capacitor is made by printing a conductive paste composition such as the above-mentioned inorganic trowel, gold, silver-palladium, etc. on a thin film sheet made of a ceramic material whose main components are BaTiO3, TiO2, etc. It can be obtained by stacking several to several tens of layers and sintering at about 700 to 1200°C, and then providing an external electrode made of the paste composition of the present invention that has been cured. Note that the external electrode may be provided with a plating layer of Ni or the like in order to prevent silver as a conductive filler from eluting into the solder during soldering of the chip capacitor.

FIG. 4 is a cross-sectional view of the chip resistor. Alumina substrate 2
A resistive element 23 made of a thick film of ruthenium oxide, carbon, or the like is provided on the resistive element 2 . 24 is a paste cured product formed by heat curing (imidization) of the conductive paste composition of the present invention, and in order to improve soldering properties, a solder plating layer 26 mainly made of tin and nickel are used. Together with the layer 24', it constitutes an external electrode 25. This nickel layer 24' is provided to prevent silver as a conductive filler from being eluted from the cured paste 24 when the external electrode 25 is soldered. 27 is a protective film made of glass.

FIG. 5(A) is a cutaway side view of the crystal oscillator. Silver-gold thin films 29a and 29b are provided on both sides of the crystal plate 28. FIG. 2B is a plan view of the crystal plate 28 provided with the thin films 29a and 29b. 29'a.

29'b is a paste cured product formed by heat curing (imidization) of the conductive paste composition of the present invention,
Crystal plate 28 and lead frame 31a.

31b, and also has the function of adhering the silver
Electrode 30a along with gold thin films 29a and 29b.

30b. 32 is a metal case.

This invention will be explained below by way of examples. Note that the organic tetracarboxylic dianhydride, organic diamine, and organic solvent used below are purified by recrystallization, distillation, etc., and are purified by, for example, Na + ion or CI! - Purified to an ion content of 5 ppm or less.

Example 1 Using a flask equipped with a stirrer, a condenser, a thermometer, and a nitrogen purging device, 0.1 mol of 2,2-bis[4-(4-aminophenoxy)phenyl]propane and 3,3'.
4,4'-biphenyltetracarboxylic dianhydride 0.1
The mixture was stirred in N-methyl-2-pyrrolidone purified by vacuum distillation while maintaining the temperature at or below 30° C. (particularly at or near room temperature). As a result, the polymerization reaction proceeded rapidly and the viscosity of the reaction system increased, yielding a brown transparent viscous polyimide precursor solution with a non-volatile solid content of 20.0% by weight and a solution viscosity of 130,000 poise. .

The obtained polyimide precursor solution was kept at 50°C, heated and aged, and the solution viscosity was lowered to 420 poise. This solution was filtered through a 3-door filter, and 97.62 kg of 325 mesh free pass scaly silver powder was added to 100 y of the filtered solution (solid content: 20 y), and the mixture was kneaded with a 3-roll roll and dispersed in the polyimide precursor solution. Then, a conductive silver paste composition for electronic components of the present invention was obtained. The viscosity of the composition was 670 poise.

The above composition was dropped onto a conductor layer made of a cured glass frit silver-palladium conductive paste formed on a ceramic substrate so that the thickness of the cured silver paste layer was 40 mm, and then this composition was added. After placing a semiconductor element thereon, the composition was heated at 120'C for 1 hour and then at 200°C for 1 hour to cure the composition to prepare a test piece.

The adhesive strength of the cured silver paste layer of this test piece was measured using a push-pull gauge and found to be 330 kg/6 at 25°C.
It was d. Further, when the adhesive strength was similarly measured on a hot plate heated to 350°C, it was 80 kg/c++f. Further, when the weight loss start temperature of the above-mentioned test piece was measured using a thermobalance, it was 420°C, indicating that it had sufficient heat resistance to withstand the temperature during wire bonding.

In addition, a thermal cycle test [
One cycle is to leave it at -60℃ for 30 minutes, then immediately leave it at 150℃ for 30 minutes, and after repeating this a specified number of times, conductivity failure (when the conductivity becomes 50% or less of the initial conductivity). When I checked the number of items, I found that 10
There was no conduction failure after 0 cycles or after 500 cycles.

Examples 2 to 6 and Comparative Examples 1 to 5 Polymerization reactions were carried out in the same manner as in Example 1 using the formulations shown in Tables 1 and 2 below, and the viscosity and non-volatile solid content shown in the tables were obtained. A solution of polyimide precursor was obtained. The viscosity of this polyimide precursor solution was lowered to a predetermined viscosity by heating and aging in the same manner as in Example 1 (however, Example 6 was heated at 60° C.). This solution was filtered through a three-tone filter, and a predetermined amount of 325 mesh free pass scaly silver powder was added to the filtered solution 1001i1' (solid content shown in the same table). The mixture was kneaded with this roll and dispersed in a polyimide precursor solution to obtain a conductive copper paste composition for electronic components.

Example 7 In a reaction vessel similar to Example 1, 2,2-bis[4-(4
-aminophenoxy)phenyl]furopane 0.1 mol and 3,3',4,4'-biphenyltetracarboxylic acid dimethyl ester 0. -1 mole was added thereto, and the mixture was stirred and reacted in N-methyl-2-pyrrolidone purified by vacuum distillation while maintaining the temperature at 30° C. or lower. After 8 hours of reaction, a brown-red transparent polyimide precursor solution having a non-volatile solid content of 50.0% by weight and a solution viscosity of 5.1 poise was obtained. Add this solution to 311M
The scaly silver powder 243y of 325 mesh free pass was added to the filtered solution 1001; l- (solid content 50y), and dispersed in the polyimide precursor solution using three rolls, and the electron A conductive silver paste composition for parts was obtained. The viscosity of this composition was 72 voids.

Examples 2 to 7 and Comparative Example 1 obtained as above
Test pieces were prepared in the same manner as in Example 1 using each of the silver paste compositions for electronic components of -5.

However, the heating conditions in Example 6 were 120°C for 1 hour, then 200°C for 0.5 hours, and further 300°C for 05 hours. The thickness of the cured silver paste layer was 40 mm, the same as in Example 1.
It is pn. These test pieces were subjected to adhesive strength measurements (25° C. and 350° C.) and thermal cycle tests in the same manner as in Example 1.

Combining these results with the results of Example 1, the following third
Shown in the table.

Table 3 As is clear from the above results, the conductive silver paste composition of the present invention is a thick film conductive adhesive that has superior adhesive strength compared to conventional polyimide-based conductive silver paste compositions. It can be seen that layers can be formed.

[Brief explanation of drawings]

1 to 5 show examples of the use of the conductive silver paste composition of the present invention, and FIG. 1(A) is a plan view of an hybrid IC, and FIG. 1(B) is a plan view of Figure 1 (N's -
I-line sectional view, Figure 2 (N is a plan view of the monolithic IC with the sealing resin layer omitted, Figure 2 (B) is the above Figure 2 (A)
Figure 3 is a cross-sectional view of a chip capacitor, Figure 4 is a cross-sectional view of a chip resistor, Figure 5 (A) is a cutaway side view of a crystal resonator, and Figure 5 (B) is a cross-sectional view of a chip capacitor. ) is shown in Figure 5 above (
It is a top view of the crystal resonator part of A). Patent Applicant: Nitto Electric Industry Co., Ltd. Agent: Patent Attorney Kunio Watarumoto Figure 1 (A)

Claims (1)

[Scope of Claims] (A paste-like product obtained by kneading a conductive photonic agent with an organic solvent into a polyimide resin precursor, wherein the polyimide resin precursor has the following formula (1) (However, in the formula, R□+R2 is hydrogen, an alkyl group having 1 to 4 carbon atoms or CF, a group, Ra, R4, R5, Rs
represents hydrogen, a halogen atom, or an alkyl group having 1 to 4 carbon atoms. ) 80 to 100 mol% of aromatic tetranuclear diamine (
Up to 10 mol% of this may be substituted with other silicon-free diamines) and the following formula (2) (wherein R, R8 are divalent organic groups, R91R10゜R11+
R12 represents a monovalent organic group, and n represents an integer of 1 or more. A conductive paste composition for electronic parts, characterized in that it is obtained by reacting an organic diamine consisting of 0 to 20 mol% of diaminosiloxane represented by ) with an organic tetracarboxylic dianhydride or a derivative thereof. thing. (2) The conductive paste composition for electronic components according to claim (1), wherein the organic tetracarboxylic dianhydride or its derivative is biphenyltetracarboxylic dianhydride or its derivative.