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JPS60170254A - Original reading device - Google Patents

Original reading device

Info

Publication number
JPS60170254A
JPS60170254A JP59024965A JP2496584A JPS60170254A JP S60170254 A JPS60170254 A JP S60170254A JP 59024965 A JP59024965 A JP 59024965A JP 2496584 A JP2496584 A JP 2496584A JP S60170254 A JPS60170254 A JP S60170254A
Authority
JP
Japan
Prior art keywords
reading device
receiving element
present
document reading
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59024965A
Other languages
Japanese (ja)
Inventor
Takashi Ozawa
隆 小澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP59024965A priority Critical patent/JPS60170254A/en
Publication of JPS60170254A publication Critical patent/JPS60170254A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Facsimile Heads (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は原稿読取装置に関する。更に詳しくは、原稿読
取装置の大幅な小型化を可能にした密着型イメージセン
サの故障の発生をなくすことによシ信頼性を高めた改良
された原稿読取装置に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a document reading device. More specifically, the present invention relates to an improved document reading device that has improved reliability by eliminating the occurrence of failures in the contact type image sensor, which has made it possible to significantly reduce the size of the document reading device.

従来技術 密着型イメージセンサは素子の大きさが原稿と同一サイ
ズであるため、原稿に密着させるかもしくはオプチカル
ファイバアレイ又はレンズアレイ等の光学系を用いた一
対一結像によシ原稿像を読取るのに使用されている。密
着型イメージセンサを用いた原稿読取装置は短い結像光
路長が得られるため、従来のMO8型或いはCCDイメ
ージセンサに比べて大幅な小型化を達成できる点に特長
がある。
Conventional technology Contact image sensors have elements that are the same size as the original, so they read the original image by placing the element in close contact with the original or by one-to-one imaging using an optical system such as an optical fiber array or lens array. It is used for. Since a document reading device using a contact type image sensor can obtain a short imaging optical path length, it has an advantage in that it can be significantly miniaturized compared to a conventional MO8 type or CCD image sensor.

第」図(a)に従来の密着型イメージセンサの等価回路
図、同図(b)に該イメージセンサの平面構成図並びに
同図(C)に垂直断面図を夫々示す。
FIG. 1A shows an equivalent circuit diagram of a conventional contact type image sensor, FIG.

密着型イメージセンサ(以下、本明細書では単にセンサ
と呼ぶ。)を使用した原稿読取装置では、受光素子に入
射する光量を光電変換し、得られる電流を出力端子にて
検出することにより光情報が読出されるようになってい
て、第1図(a)ItC図示する如く、受光素子(5)
はフォトダイオ−PPDとコンデンサCDによって形成
され、原稿の解像に必要な密度、例えば8本/龍を一列
配置して設けられる。
A document reading device using a contact image sensor (hereinafter simply referred to as a sensor in this specification) converts the amount of light incident on a light receiving element into an electric current, and detects the resulting current at an output terminal to obtain optical information. As shown in FIG. 1(a), the light receiving element (5)
is formed by a photodiode PPD and a capacitor CD, and is provided with a density necessary for resolving the document, for example, 8/dragon arranged in a row.

また、第1図(b)及び(C)に於いて、上記受光素子
(5)はSe −As −Te或いはa−8i:H等の
非晶質、又はCdS 、 CdSe等の多結晶性光導電
性半導体薄膜(3)の上下をAt、Au、Cr等の導電
性薄膜からなる下層電極(2)と、SnO2+ ITO
等の透明導電性薄膜からなる連続した上層電極(4)で
サンドイッチ状に狭んで単一基板(1)上に形成される
In addition, in FIGS. 1(b) and (C), the light receiving element (5) is made of an amorphous material such as Se-As-Te or a-8i:H, or a polycrystalline material such as CdS or CdSe. Above and below the conductive semiconductor thin film (3) are lower electrodes (2) made of conductive thin films of At, Au, Cr, etc., and SnO2+ ITO.
It is formed on a single substrate (1) in a sandwich-like manner with a continuous upper layer electrode (4) consisting of a transparent conductive thin film such as.

)□□□−I− また、上記センサには、シフ)・レジスタ(8)を動作
させるためのクロックスタートパルスの入力端子(9a
)、(9b)、シフトレジスタ(8)及びMOSトラン
ジスタ(7)によシ構成される駆動回路(6)の電源端
子(9c)、(9d)、光情報が読出される信号出力端
子(9e)及び上記受光素子(5)にバイアス電圧を印
加するためのバイアス端子(9f)が夫々設けられてい
る。
)□□□-I- The above sensor also has a clock start pulse input terminal (9a) for operating the shift register (8).
), (9b), power supply terminals (9c), (9d) of the drive circuit (6) constituted by a shift register (8) and a MOS transistor (7), and a signal output terminal (9e) from which optical information is read. ) and a bias terminal (9f) for applying a bias voltage to the light receiving element (5).

また、上記センサを駆動する回路ユニット00)は、電
源Qll 、 (12)、ノξルス発生器(13)及び
増幅器圓を夫々内蔵しており、該センサのテストを実施
する場合、上記センサの各端子(9a−f)は上記回路
ユニッ)(10)に接続される。一方、テストを行なわ
々い保存時に於いて、上記センサは回路ユニット00)
と切り離されるため、各端子(9a=f)が電気的に不
安定状態となって静電気等により電位が大きく変動する
。例えば、運搬等のために手で保持したり、収納ケース
等に出し入れしたりする際、静電気等による高電圧が印
加されるおそれが大きい。上記駆動回路(6)の部分は
MOS ICにより作られておシ、端子(9a=e)は
ICの基板間でダイオード的に保護されており、上記高
電圧の印加による素子の破壊を防いでいる。しかし、受
光素子(5)部は通常の薄膜により形成されているため
、上記高電圧の印加によって該素子(5)が破壊される
と云う致命的な欠陥を有しており、大きな問題となって
いた。
Further, the circuit unit 00) that drives the sensor has a built-in power supply Qll, (12), a noise generator (13), and an amplifier circle, respectively, and when testing the sensor, Each terminal (9a-f) is connected to the circuit unit (10). On the other hand, during storage without testing, the above sensor is in circuit unit 00).
Therefore, each terminal (9a=f) becomes electrically unstable, and the potential fluctuates greatly due to static electricity or the like. For example, when holding the device by hand for transportation, etc., or putting it in and out of a storage case, etc., there is a high risk that high voltage due to static electricity or the like will be applied. The drive circuit (6) part is made of MOS IC, and the terminals (9a=e) are protected by diodes between the IC substrates to prevent the elements from being destroyed by the application of the high voltage. There is. However, since the light-receiving element (5) is formed of an ordinary thin film, it has a fatal flaw in that the element (5) is destroyed by the application of the above-mentioned high voltage, which poses a major problem. was.

発明の目的 本発明の目的は、上記した従来技術に於ける欠点を解消
し、故障の発生をなくした改良された原稿読取装置を提
供することにある。
OBJECTS OF THE INVENTION An object of the present invention is to provide an improved document reading device that eliminates the drawbacks of the above-mentioned prior art and eliminates the occurrence of failures.

発明の構成 すなわち、本発明の上記目的(d、基板上に複数の下層
電極を設け、この上に逐次光導電体及び透明導電性上層
電極を設けてなる原稿読取装置に於いて、上記下層電極
と上層電極を抵抗またはダイオードにより連結して該両
電極に高電圧が印加されるのを防止するようにしたこと
を特徴とする原稿読取装置によシ達成される。更に詳し
くは、受光素子に印加される電圧を制限もしくは逃がす
ための抵抗またはダイオードを設けることによシ上記目
的を達成したものである。
Structure of the Invention That is, the above-mentioned object of the present invention (d) In a document reading device comprising a plurality of lower layer electrodes provided on a substrate, and a photoconductor and a transparent conductive upper layer electrode sequentially provided thereon, the lower layer electrodes This is achieved by a document reading device characterized in that the upper layer electrode and the upper layer electrode are connected by a resistor or a diode to prevent high voltage from being applied to both electrodes. The above object is achieved by providing a resistor or diode to limit or release the applied voltage.

実施例 以下、本発明の実施の一例を図面によ如詳細に説明する
EXAMPLE Hereinafter, an example of the implementation of the present invention will be explained in detail with reference to the drawings.

第2図(a)及び(b)に本発明による密着型イメージ
センサの等何回路及び構成を夫々示す。
FIGS. 2(a) and 2(b) show circuits and configurations of a contact type image sensor according to the present invention, respectively.

本発明は先の第1図により説明した従来技術に」す 配線(17a)及び(17b)によシ駆動回路(6)の
端子(9d)と、受光素子(4)から引き出された端子
(9f)間に接続されている。また、ガラス或いはセラ
ミック等の牟−基板(11上に蒸着、フォトエッチング
グロセス等の方法によシ形成されるフォトダイオードP
D及びコンデンサCDからなる上記受光素子(5)と、
該受光素子(5)とは個別の素子として形成され上記基
板(1)上に取付けられたMOSトランジスタ(力及び
シフトレジスタ(8)を含む駆動回路(6)がワイヤジ
ンディング0υ等の接続手段によシ接続されている。
The present invention uses the wiring (17a) and (17b) to connect the terminal (9d) of the driving circuit (6) and the terminal ( 9f). In addition, a photodiode P is formed on a flat substrate (11) such as glass or ceramic by a method such as vapor deposition or photo-etching process.
the light receiving element (5) consisting of a capacitor CD and a capacitor CD;
The light-receiving element (5) is formed as an individual element and is connected to a drive circuit (6) including a MOS transistor (power and shift register (8)) mounted on the substrate (1) through connection means such as wire binding 0υ. connected to.

以上の如く設けたセンサは、上記受光素子(5)に入射
する光量に応じてコンデンサCDに協えられる電荷をフ
ォトダイオ−)1’PDによシ放電し、かつシフトレジ
スタ(8)によ#)順次オンするMOS)ランリスタ(
7)によシ上記コンデンサCDを再充電し、その際に流
れる電流を出力端子(9e)にて検出して光情報が読み
出される。特に、本実施例で記載する様に上記センサの
接地側端子(9a)、lf)ノ間に分流抵抗(15)を
挿入することにより、上記受光素子(5)の下層電極(
2)及び上層電極(4)は上記駆動回路(6)及び分流
抵抗a9を介して電気的に連結されることとな9、従っ
て端子(9a=f)に外部回路を接続しない状態に於い
て、上記両t 杉(2)及び(4)は同電位であシ、上
記受光素子(5)に高電圧が印加されることかない。
The sensor provided as described above discharges the charge collected in the capacitor CD by the photodiode (1'PD) according to the amount of light incident on the light receiving element (5), and also by the shift register (8). #) MOS that turns on sequentially) Run lister (
7) The capacitor CD is then recharged, and the current flowing at this time is detected at the output terminal (9e) and optical information is read out. In particular, as described in this embodiment, by inserting a shunt resistor (15) between the ground side terminals (9a) and lf) of the sensor, the lower electrode (
2) and the upper layer electrode (4) are electrically connected via the drive circuit (6) and the shunt resistor a9. Therefore, in a state where no external circuit is connected to the terminal (9a=f), , both of the cedars (2) and (4) are at the same potential, so no high voltage is applied to the light receiving element (5).

なお、上記分流抵抗aつは厚膜抵抗或いはチップ状抵抗
により形成することが出来る。
Note that the shunt resistor a can be formed by a thick film resistor or a chip resistor.

第3図は本発明の変形例を図示するもので、先の第2図
で説明した実施例の分流抵抗住扮に代ってダイオード(
16)が挿入されている。この様にダイオード(16)
を挿入しても本発明1ばれは同様な特性が得られる。
FIG. 3 shows a modification of the present invention, in which a diode (
16) has been inserted. Diode (16) like this
The same characteristics as in the first aspect of the present invention can be obtained even by inserting the above.

発明の効果 以上記述した通り、本発明によれは原稿読取装曾の密着
型イメージセンサの出力端子間に分流抵抗或いはダイオ
ードを挿入することにより、該センサの製造工程中もし
くは使用中に高電圧により受光素子が破壊されるという
ことが防止され、信頼性の向−ヒに多大の効果がもたら
される。また、本発明によれば単に分流抵抗或いはダイ
オードを挿入するだけで、従来の密着型イメージセンサ
の回路及びサイズを全く変更することなく受光素子の破
壊の防止をすることができる。
Effects of the Invention As described above, according to the present invention, by inserting a shunt resistor or diode between the output terminals of the contact type image sensor of a document reading device, high voltage can be applied during the manufacturing process or use of the sensor. This prevents the light-receiving element from being destroyed, which greatly improves reliability. Further, according to the present invention, by simply inserting a shunt resistor or diode, it is possible to prevent destruction of the light receiving element without changing the circuit and size of the conventional contact type image sensor.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a) 、 (b)及び(c)は従来の密着型イ
メージセンサの回路図、平面構成図及び垂直断面図、第
2図(a)及び(b)は本発明の一実施例による密着型
イメージセンサを説明する回路図及び平面構成図、第3
図は本発明の変形例を示す回路図である。 図中符号: 1・・・基板 2・・・下層電極 3・・・光導電性半導体薄膜 4・・・上層電極5・・
・受光素子 6・・・粗割回路 9a〜9f・・・出力端子 15・・・分流抵抗16・
・・ダイオード 代理人弁理士(8107)佐々木 清 隆(ほか6名)
FIGS. 1(a), (b), and (c) are a circuit diagram, a planar configuration diagram, and a vertical sectional view of a conventional contact-type image sensor, and FIGS. 2(a) and (b) are an embodiment of the present invention. Circuit diagram and plan configuration diagram illustrating a contact type image sensor by
The figure is a circuit diagram showing a modification of the present invention. Symbols in the figure: 1...Substrate 2...Lower layer electrode 3...Photoconductive semiconductor thin film 4...Upper layer electrode 5...
- Light receiving element 6... Rough dividing circuit 9a to 9f... Output terminal 15... Shunt resistor 16.
...Diode agent patent attorney (8107) Kiyotaka Sasaki (and 6 others)

Claims (1)

【特許請求の範囲】[Claims] 基板上に複数の下層電極を設け、この上に逐次光導電体
及び透明導電性上層電極を設けてなる原稿読取装置に於
いて、上記下層電極と上層電極を抵抗まだはダイオード
によシ連結して該両電極に高電圧が印加されるのを防止
するようにしたことを特徴とする原稿読取装置。
In an original reading device in which a plurality of lower layer electrodes are provided on a substrate, and a photoconductor and a transparent conductive upper layer electrode are sequentially provided thereon, the lower layer electrodes and the upper layer electrode are connected by a resistor or a diode. A document reading device characterized in that a high voltage is prevented from being applied to both electrodes.
JP59024965A 1984-02-15 1984-02-15 Original reading device Pending JPS60170254A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59024965A JPS60170254A (en) 1984-02-15 1984-02-15 Original reading device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59024965A JPS60170254A (en) 1984-02-15 1984-02-15 Original reading device

Publications (1)

Publication Number Publication Date
JPS60170254A true JPS60170254A (en) 1985-09-03

Family

ID=12152682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59024965A Pending JPS60170254A (en) 1984-02-15 1984-02-15 Original reading device

Country Status (1)

Country Link
JP (1) JPS60170254A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6229162A (en) * 1985-07-29 1987-02-07 Toshiba Corp Image sensor
JPH02161773A (en) * 1988-12-15 1990-06-21 Kanegafuchi Chem Ind Co Ltd Transmission-type image sensor and picture reader using the sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232456A (en) * 1983-06-16 1984-12-27 Hitachi Ltd thin film circuit element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232456A (en) * 1983-06-16 1984-12-27 Hitachi Ltd thin film circuit element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6229162A (en) * 1985-07-29 1987-02-07 Toshiba Corp Image sensor
JPH02161773A (en) * 1988-12-15 1990-06-21 Kanegafuchi Chem Ind Co Ltd Transmission-type image sensor and picture reader using the sensor

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