JPS60164937A - information recording medium - Google Patents
information recording mediumInfo
- Publication number
- JPS60164937A JPS60164937A JP59019909A JP1990984A JPS60164937A JP S60164937 A JPS60164937 A JP S60164937A JP 59019909 A JP59019909 A JP 59019909A JP 1990984 A JP1990984 A JP 1990984A JP S60164937 A JPS60164937 A JP S60164937A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- reflectance
- information recording
- film
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 69
- 239000010408 film Substances 0.000 description 30
- 230000031700 light absorption Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011669 selenium Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- -1 TeSe2 Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は光学式の反射型あるいは透過型ビデオディマス
ク、デジタルオーティオディノク等に係り、特に、任意
の情報をディス、りに書き込むのに好適1j情報記録媒
体に関する〇
〔発明の背景〕
レーザ光の照射により情報のIき込ろ5、および読み出
l−か月能な情報記録媒体と17て、情報記録を光学的
特性、例えば反射率、透過率、屈折率等の変化として記
録する方法が提案されている。その中でも、レーザ光に
対して光吸収性が良く光を熱に変換する効果を有する光
吸収層と加熱により光学的特性が変化する相変化層の2
層膜により記録膜を構成した情報記録媒体は感度がぁ、
く高密度記録が可能である。このような記録膜とし2て
は、例えば、相変化層としてセレンSe 、あるいはS
e化合物等が用いられ、また、光吸収層としてビスマス
Bi、テルルTe、するいはこれらの化合物等が用いら
れ、その厚さはそれぞれ50〜1500Aである。この
記録膜を有する情報記録媒体を実用に供する際には、−
ヒ述した薄い記録膜の保護が必須である。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to an optical reflection type or transmission type video mask, digital audio mask, etc., and is particularly suitable for writing arbitrary information on a disk. 1j Regarding Information Recording Media [Background of the Invention] An information recording medium capable of loading and reading information 17 by irradiation with a laser beam is used to record information with optical properties, such as reflectance. , a method of recording changes in transmittance, refractive index, etc. has been proposed. Among these, there are two types: the light absorption layer, which has good light absorption properties for laser light and has the effect of converting light into heat, and the phase change layer, whose optical properties change when heated.
Information recording media whose recording film is composed of layers have a high sensitivity.
High-density recording is possible. Such a recording film 2 may include, for example, selenium Se or S as a phase change layer.
Bismuth Bi, tellurium Te, or a compound thereof is used as the light absorption layer, and the thickness thereof is 50 to 1500 Å. When putting an information recording medium having this recording film into practical use, -
It is essential to protect the thin recording film as described above.
従来、第1図に示すごとく、ガラスまたはアクリル樹脂
等の透明基板3上に相変化層1を形成し、その上に光吸
収層2、更KSiOz 、 Al2O3あるいは樹脂等
の保論層4を形成して、基板側よりレーザ光を照射して
情報記録を行うことにより情報記録膜の安定性・信頼性
を高めている。Conventionally, as shown in FIG. 1, a phase change layer 1 is formed on a transparent substrate 3 made of glass or acrylic resin, and a light absorption layer 2 and a layer 4 made of KSiOz, Al2O3, resin, etc. are formed thereon. The stability and reliability of the information recording film is improved by recording information by irradiating laser light from the substrate side.
しかし、保護層4を形成することにより、記録感度が半
分以下に低下し、情報の省き必みには保護層なし7の場
合の2倍以上のレーザパワーが必要となっている。通常
レーザ光源として用いられている半導体レーザの出力に
は限界があり、配録感度の低下により情報のlき込みが
不り]能と1.「る。以上のごとく、従来技術では、記
録感度を大幅に低下させることなく有効な保護層を形成
することが出来ないとし・う欠点があった。However, by forming the protective layer 4, the recording sensitivity is reduced to less than half, and in order to omit information, more than twice the laser power is required as in the case without the protective layer 7. The output of a semiconductor laser, which is normally used as a laser light source, has a limit, and the recording sensitivity decreases, making it impossible to record information.1. As described above, the conventional technology has the disadvantage that it is not possible to form an effective protective layer without significantly reducing recording sensitivity.
本発明の目的は、上述した従来技術の欠点を改善し、記
録感度が高く安定性の良い情報記録媒体を提供すること
にある。An object of the present invention is to improve the above-mentioned drawbacks of the prior art and to provide an information recording medium with high recording sensitivity and good stability.
本発明は、従来の情報記録膜では光吸収層からの熱利用
が相変化層に接した側だけであり、保護膜に接した反対
側から逃ける熱を有効に利用していないことに着目し、
基板上に第1の相変化層、光吸収層、および第2の相変
化層を順次形成し、その上に保護層を形成することによ
り、光吸収層からの熱利用率を倍増し、記録感度を向上
させたことを特徴とする。The present invention focuses on the fact that in conventional information recording films, heat from the light absorption layer is used only on the side in contact with the phase change layer, and the heat escaping from the opposite side in contact with the protective film is not effectively utilized. death,
By sequentially forming a first phase change layer, a light absorption layer, and a second phase change layer on a substrate, and forming a protective layer thereon, the heat utilization rate from the light absorption layer is doubled, and recording It is characterized by improved sensitivity.
以下、本発明の一実施例を図面を用いて詳細に説明する
。Hereinafter, one embodiment of the present invention will be described in detail using the drawings.
本発明における記録膜の構成を第2図に示す。FIG. 2 shows the structure of the recording film in the present invention.
光透過性のガラス基板あるいはアクリル樹脂等の樹脂基
板3上に、書き込み光、例えば波長830nmの半導体
レーザ光に対してその光吸収率が小さく、主として熱に
よってその反射率、透過率、屈折率等の光学的特性が1
0%以上変化する第1の相変層1を設け、この上に上記
レーザ光に対する光吸収率が大きく、その吸収によって
その光を熱に変換する効果を有する光吸収層2を設け、
更にその上に、第1と同様の第2の相変化層5を設け、
3層構造の記録膜とする。A light-transmitting glass substrate or a resin substrate 3 made of acrylic resin or the like has a low light absorption rate for writing light, for example, semiconductor laser light with a wavelength of 830 nm, and its reflectance, transmittance, refractive index, etc. are mainly affected by heat. The optical properties of
A first phase change layer 1 having a change of 0% or more is provided, and a light absorption layer 2 is provided thereon, which has a high light absorption rate for the laser light and has the effect of converting the light into heat by absorption,
Furthermore, a second phase change layer 5 similar to the first is provided thereon,
The recording film has a three-layer structure.
この記録膜を5i02 、 Al2O3あるいは樹脂等
の保護層4によって保護している。第1および第2の相
変化層としては、1加熱によって上述した光学的特性が
変化する材料、例えばSe、あるいはSb2Se3.
TeSe2 、 TnSe 、 CdSe等のBe化合
物やSe合金を使用し、光吸収層としては、第1および
第2の相変化層の光学的特性を変化させ得る温度(例え
ば2000C)において溶融ないしは軟化などの望まし
くない物理化、化学変化が生じることのないBi、Te
あるいはこれらの合金等を用いる0
この様な情報記録媒体に対してその情報を書き込むには
、透明基板3側より、出力約10mWの半導体レーザ(
波長830nm)光をその記録パターンに応じて相刻的
に走査する。このときレーザ光はほとんど第1の相変化
層を透過して光吸収層2に到達するが、ここにおける吸
収率が犬であるために光が吸収されて熱に変換され、レ
ーザ光の照射部において光吸収層が2006C程度に上
昇し、この部分に接した第1および第2の相変化層を局
部的に加熱する。加熱された第1および第2の相変化炭
層は、その光学的特性例えばその反射率が変化するので
レーザ光が照射された部分とされない部分で反射率の差
が生じ、光学的情報記録がなされる。これを読み出すに
は、書き込み同様、半導体レーザによって行う。この場
合の読み出しパワーは誉き込み時のパワーに比べ十分小
さいパワー例えば1mWによって行うものであり、この
低いパワーによる読み出しによれば、再書き込みがなさ
れることがない。This recording film is protected by a protective layer 4 made of 5i02, Al2O3, resin, or the like. The first and second phase change layers are made of a material whose optical properties change upon heating, such as Se or Sb2Se3.
A Be compound or Se alloy such as TeSe2, TnSe, or CdSe is used as the light absorption layer, and the layer is made of a material that melts or softens at a temperature (for example, 2000 C) that can change the optical properties of the first and second phase change layers. Bi, Te without causing undesirable physicalization or chemical changes
Alternatively, in order to write information on such an information recording medium using an alloy of these, a semiconductor laser (with an output of approximately 10 mW) is used from the transparent substrate 3 side.
A light beam (wavelength: 830 nm) is scanned in stages according to the recording pattern. At this time, most of the laser light passes through the first phase change layer and reaches the light absorption layer 2, but since the absorption rate here is small, the light is absorbed and converted into heat, and the laser light irradiation area The temperature of the light absorption layer rises to about 2006C, and the first and second phase change layers in contact with this portion are locally heated. The heated first and second phase-change coal layers change their optical properties, such as their reflectance, so that a difference in reflectance occurs between the parts irradiated with the laser beam and the parts not irradiated with the laser beam, making it impossible to record optical information. Ru. To read this, like writing, a semiconductor laser is used. In this case, the reading power is sufficiently lower than the power at the time of writing, for example, 1 mW, and reading with this low power prevents rewriting.
本発明においては、上述した第1および第2の相変化層
、吸収層の膜厚は角をである。即ち、薄膜の干渉効果を
用いて第1および第2の相愛化層における光学的特性変
化を効率よく読み出すには各層の膜厚を過半な値にして
おく必要がある。相変化層にSb2Se3を、光吸収層
にBjを用いた場合の各1−の厚さと情報書き込み前の
反射率10および書き込み後の反射率20を第3〜第5
図に示す。第3図は、Bi層を20OA、第2のSb2
Se3層を40OA 、および保護層として厚さ30μ
mの樹脂層を設けた時の第1のSb2Se3層の厚さに
対する反射率の変化を示すものである。第1のSb2S
e3層の膜厚により反射率が変化しているのは膜の干渉
効果によるものであり、膜厚500A近傍では書き込み
前の反射率が5%で、■き込み後には30%に増大して
おり、この膜厚を選定すれば極めて良好な記録情報の読
み出しが可能となる。In the present invention, the thicknesses of the first and second phase change layers and absorption layer described above are at the same angle. That is, in order to efficiently read out changes in optical properties in the first and second mutualizing layers using the thin film interference effect, it is necessary to set the film thickness of each layer to a majority value. When Sb2Se3 is used for the phase change layer and Bj is used for the light absorption layer, the thickness of each 1- and the reflectance 10 before information writing and the reflectance 20 after writing are 3rd to 5th.
As shown in the figure. In Figure 3, the Bi layer is 20OA and the second Sb2
The Se3 layer is 40OA and the thickness is 30μ as a protective layer.
12 shows the change in reflectance with respect to the thickness of the first Sb2Se3 layer when m resin layers are provided. First Sb2S
The reflectance changes depending on the film thickness of the e3 layer is due to the interference effect of the film, and when the film thickness is around 500A, the reflectance before writing is 5% and increases to 30% after writing. Therefore, if this film thickness is selected, extremely good readout of recorded information becomes possible.
また、第1および第2のSb2Se3層の厚さをそれぞ
れ500λ、400Aにした時のBi層の厚さ変化に対
する反射率の変化を第4図に示す。Bi層の厚さが40
0A以上になると光吸収が大きいため、Bi層は膜とし
ての干渉効果をもたず、反射率に対する膜厚依存性をも
たな(なる。本発明では、。Further, FIG. 4 shows the change in reflectance with respect to the change in the thickness of the Bi layer when the thicknesses of the first and second Sb2Se3 layers were set to 500λ and 400A, respectively. Bi layer thickness is 40
When the temperature exceeds 0 A, light absorption is large, so the Bi layer does not have any interference effect as a film, and the reflectance does not depend on the film thickness (in the present invention).
第2のSb2Se3層からの干渉効果をも利用するだに
選んでいる。更に、第1のSb2Se3層およびBi層
の厚されそれぞれ500 A 、 200 Aにした時
の第2のSb2.Se3層の厚さ変化に対する反射率の
変化を第5図に示す。第2のSb2Se3層の厚さが1
00〜5ooXのとき書き込み後の反射率20が書き込
み前の反射率10に対して2倍以上となり、良好な情報
書き込み、読み出しができる。以上のごとく、透明基板
上に、第1のSb2Se3層400〜700A 、 B
i層100〜400A1および第2のSb2Se3層1
00〜800Aの3層記録膜を形成し、これを樹脂層に
より保護した情報記録媒体は、良好な反射率変化を得ら
れ、レーザ光による誉き込みに適することがわかる。It was chosen to also take advantage of the interference effect from the second Sb2Se3 layer. Furthermore, the thickness of the second Sb2. FIG. 5 shows the change in reflectance with respect to the change in the thickness of the Se3 layer. The thickness of the second Sb2Se3 layer is 1
When the value is 00 to 5ooX, the reflectance 20 after writing is more than twice the reflectance 10 before writing, and good information can be written and read. As described above, the first Sb2Se3 layers 400 to 700A, B are formed on the transparent substrate.
i-layer 100-400A1 and second Sb2Se3 layer 1
It can be seen that the information recording medium in which a three-layer recording film of 00 to 800 A is formed and protected by a resin layer can obtain a good change in reflectance and is suitable for engraving with laser light.
一方、第6′図に、上記の3層記録膜40と従来の2層
記録膜30のレーザパワーに対する反射率比(iiFき
込み後/書き込み前)の関係を示す。On the other hand, FIG. 6' shows the relationship between the reflectance ratio (after iiF writing/before writing) with respect to the laser power of the above three-layer recording film 40 and the conventional two-layer recording film 30.
第6図は、上記記録媒体をディスク状に作成し、これを
1800rpmで回転させ、半径130wnの位置で一
定レベルの信号を書き込んだ時のレーザパワーに対する
反射率比であり、各層の厚さは第1のSb2Se350
0A 、 Bi 200A1および第2の5b2Se3
400Xである。第6図に示すごとく、本発明による3
層記録膜は従来の2層記録膜に比べ小さいレーザパワー
で一定の反射率比が得られ、即ち、記録感度が高いこと
がわかる。Figure 6 shows the reflectance ratio with respect to the laser power when the above recording medium was made into a disk shape, rotated at 1800 rpm, and a signal of a constant level was written at a position with a radius of 130wn, and the thickness of each layer was First Sb2Se350
0A, Bi200A1 and second 5b2Se3
It is 400X. As shown in FIG. 6, 3 according to the present invention
It can be seen that the layered recording film can obtain a constant reflectance ratio with a smaller laser power than the conventional two-layered recording film, that is, has a high recording sensitivity.
以上に述べた様に、本発明による3層記録膜は保護膜を
形成しても書き込み時の記録感度が高く、大きな反射率
比が得られるので、光学式のビデオディスクあるいはデ
ジタルオーディオディスク等の性能向上および信頼性の
向上に多大の効果を有する〇
以上の実施例では、反射型情報記録媒体について説明し
たが、本発明の構成は透過型としてもそのまま用いるこ
とが出来ることは容易に理解できよう。As mentioned above, the three-layer recording film according to the present invention has high recording sensitivity during writing even with the formation of a protective film, and a large reflectance ratio can be obtained, so it can be used for optical video discs, digital audio discs, etc. Great effect on improving performance and reliability In the above embodiments, a reflective information recording medium was explained, but it is easy to understand that the structure of the present invention can also be used as is as a transmissive type. Good morning.
また、本発明の効果として、上述の記録感度の向上の外
に、第7図のごとく反射型両面貼合わせディスクにおい
て、裏面反射によるノイズ低減にも多大の効果を有する
。即ち、第1図に示す従来の2層記録膜、例えば相変化
層としてSb2Se3、光吸収層としてBiを用いた場
合、Bi層の厚さを4ooA程度にしても記録膜の透過
率が10%以−ヒであり、しかもBi層の表面反射率が
高い(50〜60%)ため、レーザ光を照射して情報を
読み出す隙に、読み出し光の〜部が反射側ディスクのB
i層に反射されて戻ることによりノイズとなってディス
クの性能を劣化させていた。しかし、本発明による3層
記録膜では、光吸収層を中心としてほぼ光学的に対象で
あり、第3図から類推できる様に、第2のSb2Se3
側の反射率を10%以下にすることは容易である。従っ
て、反対側ディスクからの戻り光を大幅に低減すること
が可能となり、ノイズ低減に多大な効果を有する。Moreover, as an effect of the present invention, in addition to the above-mentioned improvement in recording sensitivity, in a reflective type double-sided laminated disk as shown in FIG. 7, it has a great effect in reducing noise due to backside reflection. That is, when the conventional two-layer recording film shown in FIG. 1 is used, for example, Sb2Se3 as the phase change layer and Bi as the light absorption layer, the transmittance of the recording film is 10% even if the thickness of the Bi layer is about 4ooA. Moreover, since the surface reflectance of the Bi layer is high (50 to 60%), during the time when the information is read by irradiating the laser beam, ~ portion of the read light is reflected by the B of the reflective side disk.
When reflected back from the i-layer, it becomes noise and deteriorates the performance of the disk. However, in the three-layer recording film according to the present invention, the optical absorption layer is almost optically symmetrical, and as can be inferred from FIG. 3, the second Sb2Se3
It is easy to reduce the reflectance of the side to 10% or less. Therefore, it is possible to significantly reduce the return light from the opposite disk, which has a great effect on noise reduction.
上記実施例では、保S層とディスク接着層兼用し7たが
、それぞれ独立の保護層と接着層を用いても、それぞれ
透明な場合には本発明が適用できることは明らかであろ
う。In the above embodiment, the S protection layer and the disk adhesive layer were used as both, but it is clear that the present invention can be applied even if an independent protective layer and adhesive layer are used, if each is transparent.
本発明によれば、保膿膜を形成した情報記録媒体の感度
を大幅に向上できるので、情報記録媒体の性能向上およ
び信頼性向上に多大の効果がある。According to the present invention, the sensitivity of an information recording medium on which a purulent membrane has been formed can be greatly improved, and therefore there is a great effect on improving the performance and reliability of the information recording medium.
第1図は従来の情報記録媒体の断面を示す模式図、第2
図は本発明による情報記録媒体の断面を示す模式図、第
3図は第1のS b 2 S e 3層の膜厚と反射率
の関係を示す図、第4図はBi層の膜厚と反射率の関係
を示す図、第5図は第2のSb2Se3層の膜厚と反射
率の関係を示す図、第6図はレーザパワーと反射率比の
関係を示す図、第7図は本発明による両面貼合わせディ
スクの断面を示す模式図である。
1・第1の相変化層 2・・・光吸収層3・・透明基板
4・・・保護層
5 ・第2の相変化1曲
纂1 図
第2図
第3図
牙1め5b2St弘層の別1引(A)
第十図
βノ/′1月臭、4(A)
第5図
第2図
L−ザ゛/ぐワー (mvrンFigure 1 is a schematic diagram showing a cross section of a conventional information recording medium;
The figure is a schematic diagram showing a cross section of an information recording medium according to the present invention, Figure 3 is a diagram showing the relationship between the film thickness and reflectance of the first S b 2 Se three layer, and Figure 4 is a diagram showing the film thickness of the Bi layer. Figure 5 is a diagram showing the relationship between the film thickness of the second Sb2Se3 layer and reflectance, Figure 6 is a diagram showing the relationship between laser power and reflectance ratio, and Figure 7 is a diagram showing the relationship between reflectance and reflectance ratio. FIG. 1 is a schematic diagram showing a cross section of a double-sided laminated disk according to the present invention. 1. First phase change layer 2... Light absorption layer 3... Transparent substrate 4... Protective layer 5 - Second phase change 1 composition 1 Figure 2 Figure 3 Figure 1 5 b 2 St Hiro layer Separate reference 1 (A) Figure 10 β/'January odor, 4 (A) Figure 5 Figure 2 L-zagwar (mvr)
Claims (1)
録媒体If(”: :l♂いて、情報記録膜が第1゜第
2および第3層からlIす、第1.¥よび第2の層は加
熱に、しり光学的特性が変化する材料がもなり、上記第
2の層は盲き込み光に対し2て光吸収性を有する拐料よ
りなることを%徴とする情報記録媒体。An information recording medium If (": :l♂") is formed by forming an information recording film and its security film on a substrate, and the information recording film is separated from the first layer, the second layer, the third layer, the first layer and the third layer. The second layer is made of a material whose optical properties change when heated, and the second layer is made of a material that has optical absorption properties for blind light. recoding media.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59019909A JPS60164937A (en) | 1984-02-08 | 1984-02-08 | information recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59019909A JPS60164937A (en) | 1984-02-08 | 1984-02-08 | information recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60164937A true JPS60164937A (en) | 1985-08-28 |
JPH0477968B2 JPH0477968B2 (en) | 1992-12-09 |
Family
ID=12012338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59019909A Granted JPS60164937A (en) | 1984-02-08 | 1984-02-08 | information recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60164937A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61137784A (en) * | 1984-11-21 | 1986-06-25 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | Phase change material |
JPH03178480A (en) * | 1985-12-25 | 1991-08-02 | Asahi Chem Ind Co Ltd | Material for information recording |
WO1999030908A1 (en) * | 1997-12-17 | 1999-06-24 | Asahi Kasei Kogyo Kabushiki Kaisha | Write once optical information recording medium |
EP1202285A3 (en) * | 2000-10-27 | 2004-01-02 | Matsushita Electric Industrial Co., Ltd. | Memory, writing apparatus, reading apparatus, writing method, and reading method |
US6998289B2 (en) | 2001-08-31 | 2006-02-14 | Intel Corporation | Multiple layer phase-change memory |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5837853A (en) * | 1981-08-01 | 1983-03-05 | Ricoh Co Ltd | Optical information recording medium |
-
1984
- 1984-02-08 JP JP59019909A patent/JPS60164937A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5837853A (en) * | 1981-08-01 | 1983-03-05 | Ricoh Co Ltd | Optical information recording medium |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61137784A (en) * | 1984-11-21 | 1986-06-25 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | Phase change material |
JPH03178480A (en) * | 1985-12-25 | 1991-08-02 | Asahi Chem Ind Co Ltd | Material for information recording |
WO1999030908A1 (en) * | 1997-12-17 | 1999-06-24 | Asahi Kasei Kogyo Kabushiki Kaisha | Write once optical information recording medium |
EP1202285A3 (en) * | 2000-10-27 | 2004-01-02 | Matsushita Electric Industrial Co., Ltd. | Memory, writing apparatus, reading apparatus, writing method, and reading method |
US6809401B2 (en) | 2000-10-27 | 2004-10-26 | Matsushita Electric Industrial Co., Ltd. | Memory, writing apparatus, reading apparatus, writing method, and reading method |
US6998289B2 (en) | 2001-08-31 | 2006-02-14 | Intel Corporation | Multiple layer phase-change memory |
DE10297115B4 (en) * | 2001-08-31 | 2009-04-09 | Intel Corporation, Santa Clara | Multi-layered phase change memory, in particular memory cell and method for the production |
Also Published As
Publication number | Publication date |
---|---|
JPH0477968B2 (en) | 1992-12-09 |
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