JPS60150654A - Case for semiconductor device - Google Patents
Case for semiconductor deviceInfo
- Publication number
- JPS60150654A JPS60150654A JP572884A JP572884A JPS60150654A JP S60150654 A JPS60150654 A JP S60150654A JP 572884 A JP572884 A JP 572884A JP 572884 A JP572884 A JP 572884A JP S60150654 A JPS60150654 A JP S60150654A
- Authority
- JP
- Japan
- Prior art keywords
- case
- casting resin
- resin layer
- inner circumferential
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000011347 resin Substances 0.000 claims abstract description 38
- 229920005989 resin Polymers 0.000 claims abstract description 38
- 238000010186 staining Methods 0.000 claims 1
- 238000005266 casting Methods 0.000 abstract description 21
- 238000004382 potting Methods 0.000 abstract description 3
- 230000008602 contraction Effects 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の技術分野〕
この発明は半導体装置用ケースに関し、特に、ポツフイ
ング樹脂の漏洩等の事故を生しる恐れのない、改良され
た崖尋fA装置用す スに開りるムのである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a case for a semiconductor device, and in particular to an improved case for use in a cliff fA device that is free from the risk of accidents such as leakage of potting resin. It is open.
[発明の技術的青用]
従来の半導体装置は、第1図の如きケース1内に手心体
チッゾを収納し、該半導1ホヂツプの、J−にボッティ
ングレジンを充填した後、その上に充填しl〔キャステ
ィングレジンを硬化さけて封止することにより製造され
でいる。[Technical use of the invention] In the conventional semiconductor device, a hand-centered body Chizo is housed in a case 1 as shown in FIG. It is manufactured by filling the resin into a mold and sealing it without curing the casting resin.
[費用技術の問題貞]
前記の如き従来の半導体装置においては、ケース1の内
周面が平滑面であるため、キャスティングレジン層どケ
ース1の内周面どの密着力が小さいという欠点があった
。 すなわち、常温では第2図にポリ−ようにケース1
の内周面1aとキャスティングレジン層2とはitして
いるが、半導体装置を一り0℃〜+ 125℃の18度
に繰返し放置する高温及び低温放置試験や熱ザイクル試
験を施すと、キャスティングレジン層2の熱膨服係数と
ケース1の熱膨張係j+にの差によってキャスティング
レジン層2どケース1の内周面1aどの相互接着面に隙
間が生じ、(の結束、ボッティングレジン3がキ1+ス
ティングレジン層2の外へ漏出する、という事故を生じ
やすかった。 このため、従来の半導体装置は熱リイク
ルを受ける使用状態での信頼性が低かった。[Cost and technology issues] In the conventional semiconductor device as described above, since the inner circumferential surface of the case 1 is a smooth surface, there is a drawback that the adhesion of the casting resin layer to the inner circumferential surface of the case 1 is small. . In other words, at room temperature, case 1 is as shown in Figure 2.
Although the inner circumferential surface 1a and the casting resin layer 2 of Due to the difference between the coefficient of thermal expansion of the resin layer 2 and the coefficient of thermal expansion j+ of the case 1, a gap is created between the adhesive surfaces of the casting resin layer 2 and the inner peripheral surface 1a of the case 1. Accidents such as leakage out of the resin layer 2 were likely to occur.For this reason, conventional semiconductor devices had low reliability under conditions of use where they were subject to thermal recycling.
[発明の目的]
この発明の目的は前記欠点のない半導体装置用ケースを
提供することである。[Object of the Invention] An object of the present invention is to provide a case for a semiconductor device that does not have the above-mentioned drawbacks.
[発明の概′g5]
この発明は、キトスティングレジン層とケース内周面と
の相互結合力を増加さけるために、ウスの内周面に満も
しくは突起等から成るキトステインク(H脂係含部を形
成したことを’Ti徴とりく)。[Summary of the Invention'g5] This invention provides chitostain ink (H-grease-containing portion) which is formed on the inner circumferential surface of the housing, in order to avoid increasing the mutual bonding force between the chitosting resin layer and the inner circumferential surface of the case. The formation of a 'Ti mark).
ケースの内周面に溝もしくは突起を形成してJ3くこと
により、キャスティングレシン層と9−λ1の周檗部と
の間には一種の世械的継丁か形成されるためキャスティ
ングレシン層とツノース周壁部との相互結合力は従来装
置におりるJ、りも人+iに高められる上、熱→ノイク
ルによって収縮及び膨張が繰返されても相互に離間す゛
ることはない。 その結果、この発明の半i:Q 14
. 装置用ケースによれば、従来の半導(A装置よりも
熱サイクルに対JるiW if+性が大巾に向上した半
導体装置が得られ、且つ、半導体装置の歩留りム向上づ
る。By forming grooves or protrusions on the inner peripheral surface of the case, a kind of mechanical joint is formed between the casting resin layer and the 9-λ1 peripheral part, so that the casting resin layer and the tunose peripheral wall are formed. The mutual bonding force with the parts is increased compared to that of the conventional device, and even if contraction and expansion are repeated due to heat → noise, they will not separate from each other. As a result, this invention's half i:Q 14
.. According to the device case, it is possible to obtain a semiconductor device which has significantly improved resistance to thermal cycles than the conventional semiconductor device (device A), and also to improve the yield rate of the semiconductor device.
[発明の実施例]
第3図にこの発明の一実施例を示ず。 この実施例に示
された本発明の半導体装置用ケース4はキトスティング
レジン層に接するケース内周壁面4aに周方向に延在づ
る突起4b (もしくは突条)を右している。 この突
起41)は該ケース4内にキトスティングレジン層
ングレジン中に埋没Jるため、キトスティングレジン層
に該突起が把持され、その結果、キャスティングレジン
層がケース内周壁面4aに一種の機械的永久継手にJ、
って結合された状態になる。 従って周囲温度の@激な
変動によってキャスティングレジン層とケースとが膨張
及び収縮を繰返しても、キトスティングレジン層とケー
ス内周壁面との結合がはずれることはなく、ボッティン
グレジン漏出等の事故は生じない。[Embodiment of the Invention] An embodiment of the invention is not shown in FIG. The case 4 for a semiconductor device of the present invention shown in this embodiment has a protrusion 4b (or protrusion) extending in the circumferential direction on the inner peripheral wall surface 4a of the case in contact with the chitosting resin layer. Since this protrusion 41) is buried in the resin of the Chitosting resin layer in the case 4, the protrusion is held by the Chitosting resin layer, and as a result, the casting resin layer is attached to the inner peripheral wall surface 4a of the case in a kind of mechanical manner. J to permanent joint,
This results in a combined state. Therefore, even if the casting resin layer and the case repeatedly expand and contract due to drastic fluctuations in ambient temperature, the bond between the casting resin layer and the inner peripheral wall of the case will not come off, preventing accidents such as casting resin leakage. Does not occur.
第4図(a )乃至第4図(d )は突起4bの断面形
状に関する変形実施例を示したものであり、本発明の実
施に於ては突起を第4図のいずれの形に形成してもよい
。FIGS. 4(a) to 4(d) show modified embodiments regarding the cross-sectional shape of the protrusion 4b, and in carrying out the present invention, the protrusion may be formed in any of the shapes shown in FIG. It's okay.
突起の代りに第5図(a )乃至第5図(d )の如く
、溝4Cをケース内周壁面4aに設けておいてもよい。Instead of the protrusions, grooves 4C may be provided in the inner circumferential wall surface 4a of the case, as shown in FIGS. 5(a) to 5(d).
キVスティングレジン層をケース内周壁面4aに結合
させるためのキャスティング樹脂係合部として第5図の
如き溝4Cをケース内周壁面に設けた場合も突起4bを
設け/、:場合とI+71しく、キャスティングレジン
層とケース内周壁面どの間には強固な機械的継手が形成
され、従つC突起4bを設けた場合と同じ効果が得られ
る。Even when a groove 4C as shown in FIG. 5 is provided on the inner circumferential wall of the case as a casting resin engagement portion for bonding the resin layer to the inner circumferential wall of the case 4a, the protrusion 4b is provided. A strong mechanical joint is formed between the casting resin layer and the inner circumferential wall of the case, and the same effect as when the C protrusion 4b is provided can be obtained.
なお、以−[の実施例は最も好ましいキt・ス1イング
樹脂係合部の形成例を示したりのであるが、このほかに
も、たとえばケース内周壁面に多数の小突起を設けるか
或いはケース内周壁面に4欣の小凹部を設け(すなわら
、ケース内周壁面を粗面にりる)で、これをキャスティ
ング樹脂保合部としてもよい。In addition, although the following embodiments show examples of forming the most preferable kit/swing resin engaging portion, other methods may also be used, such as providing a large number of small protrusions on the inner circumferential wall of the case, or Four small recesses may be provided on the inner circumferential wall of the case (in other words, the inner circumferential wall of the case may be made into a rough surface), and these may be used as casting resin retaining portions.
第4図の如き突起4bを設けlこ半導体装置用ケース4
及び第5図の如き溝4Cを設けた半導体装置用ケース4
をそれぞれ試作し、これらの′l−スを用いて製作した
半導イlモ装置に対して、(a)低温及び高温敢=試=
、(b)熱衝7試験、(C)温度サイクル試験を実施し
たところ、いずれの試験でもボッティングレジン回出等
の事故は全く生じなかった。A semiconductor device case 4 is provided with a protrusion 4b as shown in FIG.
and a semiconductor device case 4 provided with a groove 4C as shown in FIG.
(a) Low-temperature and high-temperature resistance = trial =
, (b) thermal shock 7 test, and (C) temperature cycle test, no accidents such as botting resin coming out occurred in any of the tests.
[発明の効果)
以上に説明したところから明らかなように、この発明に
よれば、熱サイクルが加わった場合にもボッディングレ
ジン漏出等の事故を生じない半導体装置用ケースが提供
され、その結果、半導体装置の製造歩留りと(f頼性を
向上させることができる。[Effects of the Invention] As is clear from the above explanation, according to the present invention, a case for a semiconductor device that does not cause accidents such as leakage of bodding resin even when subjected to thermal cycles is provided, and as a result, , the manufacturing yield and reliability of semiconductor devices can be improved.
第1図は従来の半導体装置用ブ スの斜視図、第2図は
第1図の半導体装置用ケースを用いて製造した半導体装
置の一部分のみの断面図、第3図は本発明の゛ll+4
体装置用ケースの一実施例の斜視図、第4図は第3図の
変形実施例を示す一部断面図、第5図は本発明の半導体
装置用ケースの変形実施例の断面図である。
1・・・半導体装置用ケース、 2・・・キャスティン
グレジン層、 3・・・ボッティングレジン、 4・・
・半導体装置用ケース、 4a・・・内周壁面、 4b
・・・突起、4c・・・)笥。
第1図
第2図
n
第3図
4図
5図FIG. 1 is a perspective view of a conventional bus for semiconductor devices, FIG. 2 is a cross-sectional view of only a portion of a semiconductor device manufactured using the semiconductor device case shown in FIG. 1, and FIG.
4 is a partial sectional view showing a modified embodiment of the semiconductor device case of the present invention; FIG. 5 is a sectional view of a modified embodiment of the semiconductor device case of the present invention. . DESCRIPTION OF SYMBOLS 1... Semiconductor device case, 2... Casting resin layer, 3... Botting resin, 4...
・Semiconductor device case, 4a...inner peripheral wall surface, 4b
... protrusion, 4c...) bamboo. Figure 1 Figure 2 n Figure 3 Figure 4 Figure 5
Claims (1)
樹脂保合部が形成され(いることを特徴とする半導体装
置用ケース。1. A case for a semiconductor device, characterized in that a main 11-staining resin retaining portion consisting of a groove or a protrusion is formed on the inner circumferential surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP572884A JPS60150654A (en) | 1984-01-18 | 1984-01-18 | Case for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP572884A JPS60150654A (en) | 1984-01-18 | 1984-01-18 | Case for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60150654A true JPS60150654A (en) | 1985-08-08 |
Family
ID=11619179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP572884A Pending JPS60150654A (en) | 1984-01-18 | 1984-01-18 | Case for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60150654A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015156466A (en) * | 2014-01-17 | 2015-08-27 | ローム株式会社 | Power module and manufacturing method thereof |
-
1984
- 1984-01-18 JP JP572884A patent/JPS60150654A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015156466A (en) * | 2014-01-17 | 2015-08-27 | ローム株式会社 | Power module and manufacturing method thereof |
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