JPS60150632A - Removing device of item to be processed - Google Patents

Abstract

PURPOSE:To assure the removal of the titled item fixed by static chuck by a method wherein the charge stored in a dielectric film is discharged by means of jetting gas from a hole to the fixed surface of an item to be processed so that the hole penetrating through dielectric film adhered on the electrode of the static chuck may be blocked. CONSTITUTION:A hole part 10 connected to a gas supply tube 11 and a gas exhaust tube 12 is connected to the inside of a vacuum vessel 1 penetrating through a dielectric film 4. An item A to be processed is attracted to the backside of the dielectric film 4. At this time, the hole part 10 is blocked with the item A to be processed simultaneously opening an electromagnetic valve 13b to vacuum-exhaust from a gas exhaust tube 12 while preventing the discharge from the backside of the item A to be processed from happening. Then, after completion of etching the item A to be processed, the electromagnetic valve 13b is closed opening the electromagnetic valve 13a for specified time to jet gas such as N2 etc. from the gas supply tube 11 directly to the backside of the item A to be processed. Through these procedures, the item A to be processed may be removed easily from the dielectric film 4 since the charge stored in the dielectric film 4 along the backside of the item A to be processed may be discharged into the gas.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a device for removing a workpiece, and more particularly to a device for removing a workpiece fixed by an electrostatic chuck.

[Technical background of the invention]

In recent years, as the semiconductor manufacturing process has become increasingly dry and automated, electrostatic fixing means have been used instead of mechanical means to fix the workpiece to the electrode in order to prevent contamination of the workpiece. be.

Figure 1 shows a conventional RIE (reactive ion etching) device using an electrostatic chuck. An electrode 2 is attached to the top of a vacuum chamber 1 via a Teflon insulating plate 3'f. On the lower surface of the electrode 2, an antistatic film 4 made of Kapton (polyimide) or the like is adhered. Furthermore, the inside of the electrode 2 is water-cooled! A conduit 5 which also serves as an eve is inserted through the conduit w5, and a high frequency power source 6 is connected to this conduit w5 via a matching circuit 7, and a DC power source 8 is connected via a choke coil 9 that cuts high frequencies. . Further, the dielectric film 4 is provided at the center of the electrode 2.
A hole lO is drilled to reach the upper surface of the hole lO.
A gas supply pipe 11 and a gas exhaust pipe 12 are connected to O via electromagnetic valves 13a and 13b, respectively.

A force inlet 14 and an exhaust 015 are provided on the lower surface of the vacuum container l, and a shaft 17 of an air cylinder I6 disposed below the vacuum container 1 penetrates through the center of the lower surface of the vacuum container 1. This shirt) 17
A support stand 18 is provided at the upper end.

In the case of the above device, the internal air of the vacuum number l is discharged from the exhaust port 15 into a vacuum. Then, a gas such as Ar is sent from the gas inlet u14 to create a full gas atmosphere inside the vacuum container 1. The object to be processed on the support stand 18/
The dielectric film 4 is lifted by the air cylinder 16.
Fix the KflN electric chuck on the bottom surface of the holder. This electric chuck is operated by turning on the DC power supply 8.

By setting the 1 flat frequency power source to 61% in this part, etching is performed on the lower surface side of the object to be treated, and the conduit 5
The electrode 2 and the object A are cooled by the cooling water flowing inside the electrode 7'c. High frequency power supply 6 after etching
, and the DC power supply 8 is turned off, the support base 18 at ground potential is raised by the air cylinder 16 and brought into contact with the workpiece A, and the workpiece AK & the accumulated charges are transferred to the support base 182. Let it pass through.

After that, open the solenoid valve 13a and supply gas (0.3 to 0.5 kg/Crl1) from the gas supply pipe 11 to the northern part at 10KN.
2) The object A to be processed is separated by sending the dielectric film 4 slightly by one shadow. The workpiece A is placed on the holding table 18 and lowered by the air cylinder b.At the same time, the solenoid valve 13a is closed and the solenoid valve +3b is opened to exhaust gas from the gas exhaust pipe 12. The saved $4 dielectric film 4 is returned to its original state.

[Problems with background technology]

In the above apparatus, when the etching time is long <lx or when a large number of objects to be processed are continuously etched by automatic operation, electric charge accumulates on the surface of the dielectric film 40. This has the disadvantage that the object to be treated A cannot be removed depending on the bulge.

Therefore, the pressure of gas such as N2 is increased (0.9 kf/c
In2 or higher) A method of expanding the dielectric film 4 may be considered, but with such a method, the adhesion between the electrode 2 and the dielectric material m4 peels off, and the dielectric material ji! 4 bulges out, and there is a problem that the object to be processed A is hit against the support table 18 and damaged.

[Purpose of the invention]

The present invention has been made in view of the above-mentioned points, and an object of the present invention is to provide a workpiece removal device that can reliably release a workpiece fixed by an electrostatic chuck.

[Summary of the invention]

In order to achieve the above object, the workpiece detachment device of the present invention includes a 'pt electrode of an electrostatic chuck that electrically fixes the workpiece, and a dielectric electrode attached to the side surface of the electrostatic chuck that fixes the workpiece. A hole penetrating the body membrane is provided at a fixed position of the object to be processed, and a gas supply pipe and a gas exhaust pipe are all connected to the hole, and a hole is provided on the back side of the object fixed to the electrostatic chuck. ,
By blowing gas sent from the gas supply pipe through the hole, the charges accumulated in the dielectric film are discharged and the object to be processed is separated, thereby causing the dielectric film to bulge. The object to be processed is removed without any problems.

[Example of communication]

Hereinafter, embodiments of the present invention will be described with reference to the second example, and the first example will be described with reference to the second example.
Components that are the same as those in the figures are given the same reference numerals and their explanations will be omitted.

In this embodiment, the hole 10 to which the gas supply pipe 11 and the gas exhaust pipe 12 are connected is configured to penetrate the dielectric film 4 and open into the inside of the vacuum vessel 1. A lip bar tank 19 for controlling the gas flow rate is provided in the middle of the connecting pipe to the section 10.

In the case of this embodiment, by turning on the DC power supply 8, the object to be processed A is attracted to the lower surface of the dielectric film 4, and at this time, the hole lO is blocked by the object to be processed AK, and the solenoid valve t3b The gas exhaust pipe 12 is opened to evacuate the gas through the gas exhaust pipe 12 to prevent discharge from occurring on the back surface of the object to be processed.

After the etching of the object to be processed A is completed, each power source 6.8'f is turned off and the support table 18 is raised by the operation of the air cylinder 16, and after the support table 18 is raised,
The solenoid valve 13b is closed and the other solenoid valve 13a is opened for a certain period of time, so that gas such as N2 is directly blown onto the back surface of the object A from the gas supply pipe 11.

As a result, the charges accumulated in the dielectric film 4 on the back surface of the object A are discharged into the gas, so that the object A is easily separated from the dielectric film 4 and placed on the support table 18. be done.

Note that in this embodiment, the workpiece removal device tRI
Although we have only explained the case where it is applied to Snow E equipment,
The present invention can be applied to any device that uses an electrostatic chuck in a vacuum container, such as a tuttering device, a plasma CVD device, an ion implantation device, and an electron beam lithography device.

〔Effect of the invention〕

As described above, the device for separating the object to be processed according to the present invention has the following features:
A gas supply pipe and a gas exhaust pipe are connected to the electrode of the electrostatic chuck and a hole penetrating the dielectric film attached to the electrode, and the electrostatic chuck is fixed to the electrostatic chuck so as to close the hole. The structure is such that gas is blown from the hole by the gas supply pipe onto the fixed surface of the workpiece, and the electric charges accumulated in the dielectric film are discharged into the gas. Even when accumulated, the objects to be treated can be easily and reliably removed. In addition, since the dielectric film does not bulge out, the object to be processed will not be damaged.Furthermore, various dielectric films can be used in addition to organic dielectric films, improving the cooling effect of the object to be processed. Also, it is possible to improve the life of the dielectric film.

[Brief explanation of drawings]

FIG. 1 is a front sectional view showing an example in which a conventional detachment device is applied to an RIE apparatus, and FIG. 2 is a front sectional view showing an embodiment of the present invention. 1... Vacuum container, 2... Electrode, 3... Insulating plate, 4
...Dielectric film, 5... Conduit, 6... High frequency power supply,
7...Matching circuit, 8...DC power supply, 9...
Choke coil, 10... Hole, 11... Gas supply pipe, 12... Gas exhaust pipe, 13... Solenoid valve, 14...
...Gas introduction pipe, 15...Exhaust pipe, 16...Air cylinder, 17...Shaft, 18...Support stand, 19
...Redevatank 0 Applicant's agent Kiyoshi Inomata

Claims (1)

[Claims] an electrode of an electrostatic chuck electrostatically fixed to the workpiece 1;
A hole penetrating the dielectric film attached to the side surface of the electrode fixing the object to be treated is provided at a position where the object to be treated is fixed, and a gas supply pipe and a gas exhaust pipe are connected to the hole. ,
By blowing gas sent from the gas supply pipe through the hole onto the fixed surface of the workpiece fixed on the electrostatic chuck, the charge accumulated in the dielectric film is discharged, and the workpiece is detached. A device for removing a workpiece, characterized in that: