JPS60147143A - Ic package with cooling structure and manufacture thereof - Google Patents
Ic package with cooling structure and manufacture thereofInfo
- Publication number
- JPS60147143A JPS60147143A JP396784A JP396784A JPS60147143A JP S60147143 A JPS60147143 A JP S60147143A JP 396784 A JP396784 A JP 396784A JP 396784 A JP396784 A JP 396784A JP S60147143 A JPS60147143 A JP S60147143A
- Authority
- JP
- Japan
- Prior art keywords
- package
- cooling
- inlet
- sheet
- cooling water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 16
- 239000000498 cooling water Substances 0.000 claims abstract description 16
- 239000002826 coolant Substances 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 7
- 229920005989 resin Polymers 0.000 claims abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000005304 joining Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 11
- 229910000833 kovar Inorganic materials 0.000 abstract description 8
- 238000007639 printing Methods 0.000 abstract description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 238000005476 soldering Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910052573 porcelain Inorganic materials 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910001229 Pot metal Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は1.Cセラミックパッケージ又は多層セラミッ
ク配線基板の内部に冷却構造を一体に設けて作成した冷
却構造を備えた1、Cパッケージとその製造法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention consists of 1. The present invention relates to a 1.C package including a cooling structure created by integrally providing a cooling structure inside a C ceramic package or a multilayer ceramic wiring board, and a method for manufacturing the same.
従来の1.Cセラミックパッケージ(以下「ぼ、Cパッ
ケージ」に略記す)又は多層セラミック配線基板(以下
「多層配線基板」に略記す。)は装着した1、C索子や
配線部等の発熱量を、その材質である1、Cパッケージ
又は多層配線基板の熱伝導によって外部え放熱するよう
になっていた。Conventional 1. A C ceramic package (hereinafter abbreviated as ``C package'') or a multilayer ceramic wiring board (hereinafter abbreviated as ``multilayer wiring board'') is designed to measure the amount of heat generated by the installed C strands, wiring parts, etc. Heat is dissipated to the outside through thermal conduction of the material 1.C package or multilayer wiring board.
しかしこれら材料例えばへ1203セラミックスの熱伝
導率は256C中にて0.040 Ca1/see −
にH・”Qと劣るため、集積密度が向上し発熱量が増大
したものにおいては外部えの熱放散が不充分であつ−た
。However, the thermal conductivity of these materials, such as He1203 ceramics, is 0.040 Ca1/see − at 256C.
As a result, heat dissipation from the outside was insufficient even in devices with improved integration density and increased heat generation.
そのために第1図の1.Cパッケージ断面図に示す如<
、1.C素子2を塔戴し、キャップ3で密閉し、側面に
リード4を取り付けた七ラミック1の底面に熱伝導率が
25℃にてQ、92Cal /5ec−伝・℃と優れた
銅板5の放熱部を装着したものが有った。また第2図の
LCパッケージ断面図に示す如く、セラミック11に熱
伝導率が25℃にて0.39 Cal /sec @
cm ・℃と優れたベリリア磁器12の放熱部上に1.
C索子13を塔戴し、キャラ7’14で密閉し、セラミ
ック11の側面にリード15を取付けたものか有った。For this purpose, see 1 in Figure 1. As shown in the cross-sectional view of the C package.
, 1. A copper plate 5 with an excellent thermal conductivity of Q, 92Cal/5ec-den・℃ at 25°C is placed on the bottom of a 7-ramic 1 on which a C element 2 is mounted, sealed with a cap 3, and a lead 4 is attached to the side. Some were equipped with heat dissipation parts. Furthermore, as shown in the cross-sectional view of the LC package in Figure 2, the thermal conductivity of the ceramic 11 is 0.39 Cal/sec at 25°C.
1. cm · °C on the heat dissipation part of excellent beryllia porcelain 12.
There was one in which a C cord 13 was mounted on a tower, sealed with a cara 7'14, and a lead 15 was attached to the side of the ceramic 11.
以上のこれらのものは、いすわも例えばA1.p3セラ
ミックに、熱伝導性に優ねた釜属材料の銅板やモリブデ
ン板又はコバール板やそしてセラミック材料のべIJ
IJア磁器等を接合して使用されていた。These above-mentioned items are also available from Isuwa, for example, A1. In addition to P3 ceramic, copper plate, molybdenum plate, or Kovar plate, which is a pot metal material with excellent thermal conductivity, and IJ, which is a ceramic material.
It was used by joining IJA porcelain, etc.
しかしこわらの方法では下記の様な欠点が有った。第1
図の断面図に示す熱伝導性に優れた金属板の接合は、セ
ラミックとの熱膨張率が違うために接合が難かしく、ま
た近似した熱膨張率の金属材料を使用しても、その接合
方法はセラミックのメタライズ加工とその上面へのNi
メッキ、半田や銀ロー材での接合となり、ロー材自身の
熱放散の妨げや才だ接合時のロー材間の空洞が生じやす
い関係上、この空洞が熱伝導の妨げとなった。However, Kowara's method had the following drawbacks. 1st
It is difficult to join metal plates with excellent thermal conductivity, as shown in the cross-sectional view in the figure, because the coefficient of thermal expansion is different from that of ceramic, and even if metal materials with similar coefficients of thermal expansion are used, The method is to metallize the ceramic and apply Ni to the top surface.
Joining was done using plating, solder, or silver brazing material, which hindered the heat dissipation of the brazing material itself, and also caused cavities between the brazing materials during round joints, which hindered heat conduction.
また第2図の断面図に示す方法では、べIJ IJヤ磁
器は人体への毒性が有るためにおのずから使用が限定さ
れるし、また金飄板を使用したとしても、その上への1
.C素子の接合及びセラミックとの接合で上記した問題
点か残った。In addition, in the method shown in the cross-sectional view of Figure 2, the use of ceramic porcelain is naturally limited because it is toxic to the human body, and even if a metal plate is used, the use of porcelain is naturally limited.
.. The above-mentioned problems remained in the bonding of the C element and the bonding with the ceramic.
これら問題点の外に接合に要する加工費が嵩み、かつ組
立て構造体が大型となり慨器装置使用時の弊害となった
。In addition to these problems, the processing cost required for joining increases, and the assembled structure becomes large, which is a problem when using the stent device.
本発明は以上の欠点を解決するためになされたものであ
り、その要旨は1.Cセラミックパッケージの内部に、
冷却水又は冷却媒体を流刑して循環する通路を一体に設
けて、その外表面に導入管と排出管を備えてなることを
特徴とする 7冷却構造を備えたI−Cパッケージを提
供するものである。The present invention has been made to solve the above-mentioned drawbacks, and its gist is 1. Inside the C ceramic package,
7. To provide an I-C package with a cooling structure, characterized in that a passage for circulating cooling water or a cooling medium is integrally provided, and an inlet pipe and an outlet pipe are provided on the outer surface of the passage. It is.
またこの冷却構造を備えた1、Cパッケージの製造法に
ついて提供するもので、その要旨はグリーンシートにW
又はW −Mo系よりなるペーストにて配線回路を印刷
した数枚を積層し、またその下に配線回路を形成しない
積層時の下から2層目シートか又は配線回路に接触しな
い部位に、冷却水又は冷却媒体が流通して循環する通路
をパンチング加工にて形成し、また最下層シートか或い
は積層時の側面部となる位置に冷却水又は冷却媒体の導
入口と排出口となる孔又は通路を設けて、これらを積層
接着し、樹脂抜き后還元雰囲気中にて焼結して、尋人口
と排出口となる孔に金属管を接合してなることを特徴と
するものである。It also provides the manufacturing method of 1.C package equipped with this cooling structure, the gist of which is written on the green sheet.
Alternatively, several sheets printed with wiring circuits using W-Mo paste are laminated, and cooling is applied to the second layer sheet from the bottom when laminating without wiring circuits formed thereunder, or to areas that do not come into contact with the wiring circuits. A passage through which water or a cooling medium circulates is formed by punching, and holes or passages that serve as an inlet and an outlet for the cooling water or cooling medium are formed in the bottom sheet or at the side surface when stacked. These are laminated and bonded, and after the resin is removed, they are sintered in a reducing atmosphere, and a metal tube is bonded to the vent and the hole that will serve as the discharge port.
以下1本発明につき要点を述べる。The main points of one invention will be described below.
第4図はグリーンシートを一定寸法に截断したものに加
工を施した斜「A図であり、A図は1.C素子を挿入す
る貫通窓32の周辺にW又はW −M。Figure 4 is an oblique view A of a green sheet cut to a certain size and processed, and the figure A shows W or W-M around the through window 32 into which the 1.C element is inserted.
系よりなるペーストにて図示しないキャップを接合する
印刷面33を形成したものである。B図は1.C素子を
挿入する貫通窓35から二辺に印刷配線36を形成した
もの、0図は1.C索子を戴置する印刷面38を形成し
たもので1以上は従来の1.Cパッケージの製造法と同
一のものである。D図は截断したグリーンシート39に
冷却水又は冷却媒体が流通する通路40を設けたもの−
8図は截断したグリーンシート41に冷却水又は冷却媒
体の導入口と排出口となる孔42.428を設けて図示
しないF面の孔周辺に印刷面を形成したものである。以
上を槓j1接着して側面印刷を施し樹脂抜き后、還元雰
囲気の1500〜1550’(jこで焼結し、外表面の
メタライズ面にN1メッキを施し、側面にコバールのリ
ード線と導入孔及び排出孔にコバール管かAiII管を
銀ロー相か半田にて接合したものである。A printing surface 33 to which a cap (not shown) is bonded is formed using a paste made of a resin. Figure B is 1. The printed wiring 36 is formed on two sides from the through window 35 into which the C element is inserted, and Figure 0 is 1. A printed surface 38 is formed on which the C cord is placed, and 1 or more are the conventional 1. This is the same manufacturing method as the C package. Figure D shows a cut green sheet 39 with passages 40 through which cooling water or a cooling medium flows.
FIG. 8 shows a cut green sheet 41 with holes 42 and 428 that serve as an inlet and an outlet for cooling water or a cooling medium, and a printed surface is formed around the holes on side F (not shown). After gluing the above and printing on the side surface, remove the resin, sinter it in a reducing atmosphere at 1500 to 1550' (j), apply N1 plating to the outer metallized surface, and add Kovar lead wires and introduction holes on the side surface. And a Kovar tube or an AiII tube is connected to the discharge hole with silver low phase or solder.
この完成一部斜視図を第3図に示し1図中43と43a
がそれぞれ導入管と排出管である。第6図は別の実施例
工程斜視図であり、第5図はその完成一部斜視図で側面
部に冷却水又は冷却媒体の導入管と排出管を設置したも
のである。A perspective view of this completed part is shown in Figure 3, and 43 and 43a in Figure 1.
are the inlet pipe and the outlet pipe, respectively. FIG. 6 is a perspective view of the process of another embodiment, and FIG. 5 is a partially completed perspective view of the same, in which an inlet pipe and an outlet pipe for cooling water or a cooling medium are installed on the side surface.
以上では1.Cパッケージの実施例について述べたか、
これは多層配線基板にも適用出来るものである。The above is 1. Did I mention an example of a C package?
This can also be applied to multilayer wiring boards.
以上にて作成した1、Cパッケージ又は5多層配線基板
に1.C素子やその他部品を装着して使用する場合、導
入管より入った冷却水又(′!メタノール等の冷却媒体
は排出管より外部へ出て冷却され、再び導入管へと循環
されて1.C)々゛ンケージは多層配線基板を冷却する
ものである。1. To the 1.C package or 5 multilayer wiring board created above. When using the C element and other parts installed, cooling water or a cooling medium such as methanol that enters from the inlet pipe exits from the discharge pipe to be cooled and is circulated back to the inlet pipe.1. C) The main cage cools the multilayer wiring board.
本発明は以上述べた如<、1.C/々°ソケージや多層
配線基板の内部に一体に冷却構造を設置するものであり
、製作加工費は従来の冷却構造をもつ1.Cパッケージ
や多層配線基板より(′!る力)に安価に製作出来、か
つ外形寸法も冷却構造をもたない従来品と変らない大き
さのものであった。The present invention is as described above.1. A cooling structure is installed integrally inside the cage or multilayer wiring board, and the manufacturing cost is lower than that of the conventional cooling structure. It was cheaper to manufacture than a C package or a multilayer wiring board, and its external dimensions were the same as those of conventional products without a cooling structure.
この様に外形寸法が大型にならないためGこ。In this way, the external dimensions are not large, so G.
機器への装着が容易であり、かつ装着面積−制約を受け
ることがなく、総ての機器をと使用出来るものである。It is easy to attach to equipment, and can be used with all equipment without being subject to restrictions on mounting area.
また本発明の冷却構造体では、従来の冷却装置をもった
1、Cパッケージや多層配線基板のものより約10〜1
5倍の冷却効果が認められ。In addition, the cooling structure of the present invention has a cooling structure of about 10 to 1
5 times the cooling effect was observed.
かつ従来品の冷却金属との接合箇所の耐久損傷に比べ1
本発明品は優れた面4久注を示し、その効果は太きかっ
た。And compared to the durability damage of the joint with the cooling metal of the conventional product, 1
The product of the present invention showed excellent surface 4-kyuu, and the effect was strong.
以下、実施例につき説明するが1本発明の請求範囲内に
おいてこれに限定されない。Examples will be described below, but the present invention is not limited thereto within the scope of the claims.
実施例I
A1p392%とCaO、MgO、Si02(D合量8
粥計100%の混合粉末にエチルセルローズ、ジブチル
フタレート、トリクレン、分散剤等を加え撹拌混合した
泥漿をドクターブレード工法にて0.7tm厚さのグリ
ーンシートを製作した。Example I A1p 392% and CaO, MgO, Si02 (total D amount 8
Ethyl cellulose, dibutyl phthalate, trichlene, a dispersant, etc. were added to a mixed powder of 100% gruel and stirred to form a slurry, and a green sheet with a thickness of 0.7 tm was produced using the doctor blade method.
このシートを30X20m寸法に裁断して5枚を作り、
第4図の斜視図に示す形状に加工した。A図はシー)3
1に1.C索子を挿入する貫通窓32を18X10層寸
法にパンチング加工 ?し、その周りに1.2 rrt
irr i]にてW粉末を調製したペーストにてスクリ
ーン印刷33して形成した。Cut this sheet into 30x20m dimensions to make 5 pieces.
It was processed into the shape shown in the perspective view of FIG. Figure A is C)3
1 to 1. Punching the through window 32 into which the C cord is inserted into a size of 18 x 10 layers? and around it 1.2 rrt
It was formed by screen printing 33 using a paste prepared from W powder in [irr i].
これは焼結層にキャップの接合面となる。B図it り
++−ンシート34に1.C素子を挿入する貫通窓35
を12X6mm寸法に孔明けし、この窓35から二辺の
外部へ向って上記と同じペーストにて印刷配線36を形
成したものである。0図はシート37に1.C素子を戴
置接合する印刷面38を上記と同じペーストにて形成し
たもので1以上A、B、Cは従来の1.Cパッケージの
製造法と同一のものである。D図はシート39に冷却水
又は冷却媒体が流通する通路40を2脳中寸法でコの字
連続形状にてパンチング形成した。E図はシート41に
冷却水又は冷却媒体の導入口と排出口となる2馴φ孔4
2.42aを2ヶ設けて1図示していない下面の孔42
゜428周りに1.2 ran巾にて上記と同−Wペー
ストにて印刷形成した。This becomes the bonding surface of the cap to the sintered layer. Figure B: 1. Penetration window 35 into which the C element is inserted
A hole with dimensions of 12 x 6 mm was made, and printed wiring 36 was formed using the same paste as above from the window 35 toward the outside on two sides. Figure 0 shows 1. on sheet 37. The printed surface 38 on which the C element is placed and bonded is formed with the same paste as above, and A, B, and C are the same as the conventional 1. This is the same manufacturing method as the C package. In Figure D, a passage 40 through which cooling water or a cooling medium flows is formed by punching in the sheet 39 in a U-shaped continuous shape with a medium size. Figure E shows 2 holes 4 with 2 holes in the seat 41 that serve as an inlet and an outlet for cooling water or a cooling medium.
2. Two holes 42a are provided on the bottom surface (not shown).
The same W paste as above was printed around 428° with a width of 1.2 ran.
以上加工した5枚をE図に示したシートを最下層として
図示順通りに積層圧着した。この際接着剤を各シート間
に塗布し、温度60°C圧力80−の加熱圧力機を使用
した。The five sheets processed above were laminated and pressure bonded in the order shown, with the sheet shown in Figure E as the bottom layer. At this time, an adhesive was applied between each sheet, and a heating pressure machine at a temperature of 60 DEG C. and a pressure of 80 DEG C. was used.
以上の各加工は単体について説明したが、実際の加工は
50〜100個取りの方法で行はれ。Each of the above-mentioned processes has been explained for a single unit, but the actual process is performed by machining 50 to 100 pieces.
積層圧着后単体に分断される。After lamination and crimping, it is separated into individual pieces.
上記積層圧着された両側面にリード線接合用の印刷パッ
ド部をWのペーストにて形成し、270℃中にて樹脂抜
き后、水素と窒素の混合雰囲気の1520”Cにて焼結
した。焼結体のメタライズ面にNiメッキ3μmを施し
、銀ロー薄板をのせ。Printed pads for connecting lead wires were formed using W paste on both sides of the laminated and press-bonded structure, and after removing the resin at 270°C, sintering was performed at 1520''C in a mixed atmosphere of hydrogen and nitrogen. The metallized surface of the sintered body is plated with 3 μm of Ni, and a thin silver plate is placed on top.
その上にコバールリード板と導入、排出コバール管3.
2φ×2.0φ論をセットして700での水素と窒素の
混合雰囲気中にて接合した。On top of that is a Kovar lead plate and an introduction and discharge Kovar pipe 3.
The 2φ×2.0φ theory was set and bonding was carried out in a mixed atmosphere of hydrogen and nitrogen at 700℃.
この完成品の斜視図を第3図に示し、43゜432が導
入管、排出管であり、44がリード線である。この中央
凹部のN1メッキ上にAnメッキ1.5μmを施して、
1.C索子を接合し、この素子と配線部との結線をボン
ディング接合し。A perspective view of this completed product is shown in FIG. 3, where 43° 432 is an inlet pipe, an outlet pipe, and 44 is a lead wire. Apply 1.5 μm of An plating on the N1 plating in this central recess,
1. The C element is joined, and the connection between this element and the wiring part is bonded.
その上面にガラスキャップを接合して密閉した。A glass cap was bonded to the top surface to seal it.
こねにDC5Vを連結し実機テストを行い。Connect DC5V to Kone and perform an actual machine test.
導入管より強制的に10°Cの冷却水を送入した。Cooling water at 10°C was forcibly introduced from the inlet pipe.
5時間経過后もパッケージ側壁温度は18℃より上昇し
なかった。冷却装置を取付けない従来の1.Cパッケー
ジは30分経過后58°Cに上昇した。本テストももつ
と温度上昇の太きいLCパッケージを使用すると、その
冷却効果は明確にされるものである。Even after 5 hours had passed, the package side wall temperature did not rise above 18°C. Conventional 1. without installing a cooling device. The C package rose to 58°C after 30 minutes. In this test, when an LC package with a large temperature rise is used, its cooling effect becomes clear.
実施例2 実施例1にて製作した同一素地と方法にて。Example 2 Using the same base material and method as in Example 1.
0.7を−と1.4twn厚さのグリーンシートを得た
。こねを実施例1と同一寸法にて截断して0.7を馴シ
ートを4枚と1.4mmt シートを1枚作り。A green sheet with a thickness of 0.7 and 1.4 twn was obtained. Cut the dough to the same dimensions as in Example 1 to make four 0.7 mm sheets and one 1.4 mm sheet.
第6図の斜視図に示す八、B、、0図の加工を実施例1
と同様にして製作した。D図は1.4tmシート57に
冷却水又は冷却媒体が流通する通路58を2#I巾寸法
で6字型の向き合った形状に打抜きした。この際導入口
58aと排出口58bがシート−辺に設けられた。E図
は加工を施さない0.7tmJnシート60である。Example 1 The machining of Figures 8, B, and 0 shown in the perspective view of Figure 6 was carried out in Example 1.
It was produced in the same way. In Figure D, passages 58 through which cooling water or a cooling medium flows are punched out into a 1.4 tm sheet 57 in the shape of a 6-shape facing each other with a width of 2#I. At this time, an inlet 58a and an outlet 58b were provided on the side of the sheet. Figure E shows a 0.7tmJn sheet 60 that has not been processed.
次にE図のシートを最下層とし、その上にD図を示す外
枠部と内枠部59を接着剤で張り合せ、その上に順次に
0図に示すシート、B図に示すシー)−A図に示すシー
トを張り合せて実施例1と同一方法にて積層接着した。Next, the sheet shown in Fig. E is used as the bottom layer, and the outer frame portion and inner frame portion 59 shown in Fig. D are pasted together with adhesive on top of it, and then the sheet shown in Fig. 0 and the sheet shown in Fig. B are placed on top of it in order. - The sheets shown in Figure A were pasted together and laminated and bonded in the same manner as in Example 1.
上記積層接着された両側面にリード線接合用の印刷面を
W粉末よりなるペーストにて形成し。Printed surfaces for connecting lead wires were formed on both sides of the laminated and bonded layers using a paste made of W powder.
また側面の2ヶ孔部周りに1.2 Tn1n巾寸法に同
一ペーストにて印刷形成して、270℃中にて樹脂抜き
后、水素と窒素との混合雰囲−り中の152に’にて焼
結した。焼結体のメタライズ面にNlメッキ3μmを施
し、銀ロー薄板をのせその上にコバールリード板と導入
、排出コバール管3.2φ×2,0φ咽をセットして7
00″′Cの水素と窒素の混合雰・囲気中にて接合した
。この完成品の斜視図を第5図に示し1図中61,61
aが尋人管と排出管であり、62はリード線である。In addition, the same paste was printed around the two holes on the side surface to a width of 1.2 Tn1n, and after removing the resin at 270°C, it was heated to 152°C in a mixed atmosphere of hydrogen and nitrogen. and sintered. The metallized surface of the sintered body was plated with Nl to a thickness of 3 μm, a thin silver solder plate was placed on top of that, a Kovar lead plate was introduced, and a discharge Kovar pipe of 3.2φ x 2.0φ was set.
Bonding was carried out in a mixed atmosphere of hydrogen and nitrogen at 00'''C. A perspective view of this finished product is shown in Figure 5, and 61 and 61 in Figure 1.
62 is a lead wire.
以降実施例1と同様にして1.C素子、結線。Thereafter, 1. C element, wiring.
キャップを取付は実機テストを行ったところ実施例1と
同じ冷却効果が発揮された。When the cap was attached and tested on an actual machine, the same cooling effect as in Example 1 was exhibited.
本発明の冷却構造を備えた1、Cパッケージや ?多層
配線基板は、集積密度か向上し発熱量の多いもの程、そ
の冷却効果と耐久性を発揮するものである。1.C package equipped with the cooling structure of the present invention? The higher the integration density and the higher the amount of heat generated by a multilayer wiring board, the better its cooling effect and durability will be.
以上の実施例では1.Cパッケージのデコアルインライ
ンタイプについて述べたが、ラミネート積層法であれば
フラット、プラグイン、チップキャリアのいずれにも適
用比来るものである。In the above embodiment, 1. Although the decoal inline type of C package has been described, the lamination method can be applied to flat, plug-in, and chip carriers.
第1図及び第2図の断面図は、従来の冷却構造を備゛え
た1、Cパッケージ、第3図は本発明の一実施例の完成
斜視図、第4図はその製作工程斜視図、第5図は別の実
施例の完成斜視図、第6図はその製作工程斜視図である
。
31.34.37,39,41,51,57゜60・・
・・・・截断したグリーンシー)、32,35,52゜
54・・・・・・打抜き窓部+ s3,36,38.5
3,55゜56・・・・・・印刷面、40.58・・曲
冷却水通路となる打抜!欠除H,42,4za、58a
、58b、、。
・・・導入口と排出0.43,43a、61,61a−
・・・・・導入及び排出金属管、 44.62・・曲リ
ード線第3図 第4図
第5図 第6図1 and 2 are cross-sectional views of a 1 and C package equipped with a conventional cooling structure, FIG. 3 is a completed perspective view of an embodiment of the present invention, and FIG. 4 is a perspective view of its manufacturing process. FIG. 5 is a completed perspective view of another embodiment, and FIG. 6 is a perspective view of its manufacturing process. 31.34.37,39,41,51,57゜60...
...cut green sea), 32, 35, 52゜54 ... punched window + s3, 36, 38.5
3,55゜56...printed surface, 40.58...punching that becomes the curved cooling water passage! Deletion H, 42, 4za, 58a
, 58b, . ...Inlet and outlet 0.43, 43a, 61, 61a-
...Introduction and discharge metal pipe, 44.62...Curved lead wire Fig. 3 Fig. 4 Fig. 5 Fig. 6
Claims (1)
冷却媒体を流通して循環する通路を一体に設けて、その
外表面に導入管と排出管を備えてなることを特徴とする
冷却構造を備えた1、Cパッケージ。 2、グリーンシートにW又はW−Mo係よりなるペース
トにて配線回路を印刷した数枚を積層接着して焼結し一
体化した1、Cセラミックパッケージの製造法において
、上記印刷回路を形成した数枚のグリーンシートとグリ
ーンシートに配線回路を形成しない積層時の下から2層
目シートか又は配線回路に接触しない部位に、冷却水又
は冷却媒体が流通して循環する通路をパンチング加工に
て形成し、また最下層シートか或いは積層時の側面部と
なる位置に冷却水又は冷却媒体の導入口と排出口となる
孔又は通路を設けて。 これら加工シートを積層接着し、樹脂抜き后還元雰囲気
中にて焼結して、導入口と排出口となる孔に金属管を接
合してなることを特徴とする冷却構造を備えた1、Cパ
ッケージの製造法。[Claims] 1.1. 1. A cooling structure characterized in that a passage for circulating cooling water or a cooling medium is integrally provided inside the ceramic package, and an inlet pipe and an outlet pipe are provided on the outer surface of the passage. C package. 2. A wiring circuit was printed on a green sheet using a paste made of W or W-Mo, and the printed circuit was laminated and bonded and sintered to form a single body. 1. In the manufacturing method of a C ceramic package, the above printed circuit was formed. When several green sheets and green sheets are laminated without wiring circuits, holes are punched into the second layer sheet from the bottom or in areas that do not contact wiring circuits, through which cooling water or a cooling medium flows and circulates. In addition, holes or passages that serve as the inlet and outlet for cooling water or a cooling medium are provided in the lowermost sheet or at the side surface when laminated. 1.C equipped with a cooling structure characterized by laminating and bonding these processed sheets, sintering them in a reducing atmosphere after removing the resin, and joining metal pipes to the holes that serve as the inlet and outlet. How the package is manufactured.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP396784A JPS60147143A (en) | 1984-01-11 | 1984-01-11 | Ic package with cooling structure and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP396784A JPS60147143A (en) | 1984-01-11 | 1984-01-11 | Ic package with cooling structure and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60147143A true JPS60147143A (en) | 1985-08-03 |
Family
ID=11571845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP396784A Pending JPS60147143A (en) | 1984-01-11 | 1984-01-11 | Ic package with cooling structure and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60147143A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5575872A (en) * | 1993-09-20 | 1996-11-19 | Fujitsu Limited | Method for forming a ceramic circuit substrate |
EP2565920A4 (en) * | 2010-04-28 | 2016-12-21 | Toyota Jidoshokki Kk | HEAT DISSIPATING DEVICE AND SEMICONDUCTOR DEVICE |
-
1984
- 1984-01-11 JP JP396784A patent/JPS60147143A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5575872A (en) * | 1993-09-20 | 1996-11-19 | Fujitsu Limited | Method for forming a ceramic circuit substrate |
EP2565920A4 (en) * | 2010-04-28 | 2016-12-21 | Toyota Jidoshokki Kk | HEAT DISSIPATING DEVICE AND SEMICONDUCTOR DEVICE |
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