JPS60137016A - Film forming device - Google Patents
Film forming deviceInfo
- Publication number
- JPS60137016A JPS60137016A JP24906183A JP24906183A JPS60137016A JP S60137016 A JPS60137016 A JP S60137016A JP 24906183 A JP24906183 A JP 24906183A JP 24906183 A JP24906183 A JP 24906183A JP S60137016 A JPS60137016 A JP S60137016A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- plate
- film
- shaped body
- pressure gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002093 peripheral effect Effects 0.000 claims abstract description 8
- 239000003795 chemical substances by application Substances 0.000 abstract description 20
- 238000002347 injection Methods 0.000 abstract description 10
- 239000007924 injection Substances 0.000 abstract description 10
- 239000007789 gas Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004581 coalescence Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は半導体ウェーハなどの薄板体の主面上にレジ
スト膜などの有機膜全成膜する成膜装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a film forming apparatus for entirely forming an organic film such as a resist film on the main surface of a thin plate body such as a semiconductor wafer.
以下、半導体ウェーハの主面上にレジスト膜を成膜する
成膜装置を例にとり説り」する。In the following, explanation will be given by taking as an example a film forming apparatus that forms a resist film on the main surface of a semiconductor wafer.
第１図は従来の成膜装置の一例の主要構成要素含水す正
面図である。FIG. 1 is a front view of a water-containing main component of an example of a conventional film forming apparatus.
図において、＋Ｉ］は上面上にこの上面の形状エリ大き
い形状の半導体ウェーハ（以下「ウェーッ１」と略称す
る）−が載置され真空吸着される板状体（１ａ）とこの
板状体（１ａ）の下面の中心部に先端が固着され板状体
（ｌａ） ’ＴｈＴｈ図示矢印白方向速回転させる回転
軸（１ｂ）とこの回転軸（１ｂ）の軸線に沿い一方の端
部が板状体（１ａ）の上面に開口し他方の端部が真空装
置（図示せず）に連通ずるように設けられ板状体（１ａ
）の上面上に載置され几ウェー）Ｓ％を真空吸看する真
空孔（１Ｃ）とを有するスピンナー、（２）はスピンナ
ー（１１の真空孔（ｌｃ）の上方の位置に設けられ板状
体（ｌａ）の上面上に真空吸着されたウェーハ…の主面
上に所要量の成膜用レジスト剤３１１ ｋ滴下するレジ
スト剤滴下管である。In the figure, +I] indicates a plate-shaped body (1a) on which a semiconductor wafer (hereinafter referred to as "wafer 1") with a large shape is placed and vacuum-suctioned, and this plate-shaped body ( A plate-shaped body (la) whose tip is fixed to the center of the lower surface of 1a) is rotated at a speed in the direction of the arrow shown in the figure (1b), and one end is plate-shaped along the axis of this rotation shaft (1b). The plate-shaped body (1a) is provided with an opening on the upper surface of the body (1a) and the other end communicates with a vacuum device (not shown).
) is placed on the upper surface of the spinner and has a vacuum hole (1C) for sucking and absorbing S% under vacuum; (2) is a plate-shaped spinner installed above the vacuum hole (lc) of This is a resist agent dropping tube for dropping a required amount of film forming resist agent 311k onto the main surface of the wafer vacuum-adsorbed onto the upper surface of the body (la).
次に、この従来例の装置の作用について説明する。Next, the operation of this conventional device will be explained.
まず、前工程から搬送されたウェーッ・…をその主面の
中心°部が真空孔（１Ｃ）上に位置する工うにして板状
体（１ａ）の上面上に載置して真空吸着する。First, the wafer conveyed from the previous process is placed on the upper surface of the plate-shaped body (1a) so that the center of its main surface is located above the vacuum hole (1C), and vacuum adsorbed. .
次に、レジスト剤１１１！ｉ下−＃（２）から所要緻の
成膜用レジスト剤１５１１ ’にウェーハ■の主面の中
心部上に滴下したのちに、スピンナーｆｉｌの回転軸（
１ｂ）を図示矢印Ｒ方向に回転させてウェーッ１…を回
転させると、ウェーハ（７）の回転による遠心力に裏っ
て、成膜用レジスト剤＋５１１がウェーッ１−の主面の
中心部から周縁へ向って広がり周縁からレジスト剤（５
１１の不要部分が外部へ飛散してウェーッ５ｔｉＪの主
面上に一点鎖線で図示する所望膜厚のレジスト膜（５−
）が成膜される。Next, resist agent 111! After dropping the film forming resist agent 1511' of the required density from i bottom-# (2) onto the center of the main surface of the wafer ■,
When wafer 1... is rotated by rotating wafer 1b) in the direction of arrow R in the figure, the film-forming resist agent +511 is removed from the center of the main surface of wafer 1- by the centrifugal force caused by the rotation of wafer (7). The resist agent (5
Unnecessary portions of wafer 11 are scattered to the outside, resulting in a resist film (5-
) is deposited.
ところが、この従来例の装置では、レジスト膜（５１ａ
）の成膜時に成膜用レジスト剤１５１１のウェーッＳ−
の周縁から外部へ飛散する不要部分の一部がウェーハ輪
の裏面側へ回り込んでウェー／５１５Ｑの裏面の周縁部
に被着する。この工うに、ウェーッＳａ１の裏面の周縁
部にレジスト剤６υが破着すると、後工程例えばベーキ
ング処理工程、結党処理工程などにおける収り扱いに支
障が生ずるという欠点があったＯ
〔発明の概要〕
−この発明は、かかる欠点を除去する目的でなされ几も
ので、スピンナーの板状体の上面上に真空吸着されこの
板状体の上面の形状エリ大きい形状の薄板体の主面上に
有機膜を成膜する際に、薄板体の裏面の全周縁部へ板状
体の側面から気体全噴射させるようにすることにＬつて
、成膜用有機剤の薄板体の裏面の周縁部への回り込みを
防止した成膜装置を提供するものである。However, in this conventional device, the resist film (51a
) When forming the film, the resist agent for film formation 1511 is
A part of the unnecessary portion scattered to the outside from the periphery of the wafer loops around to the back side of the wafer ring and adheres to the periphery of the back side of the wafer/515Q. This method has the disadvantage that if the resist agent 6υ is damaged on the peripheral edge of the back surface of the wafer Sa1, it will cause problems in handling in subsequent processes such as baking process, coalescence process, etc. [Summary of the Invention] - This invention has been elaborately made for the purpose of eliminating such drawbacks, and an organic film is vacuum-adsorbed onto the upper surface of a plate-like body of a spinner, and an organic film is deposited on the main surface of a thin plate body having a large shape on the upper surface of this plate-like body. When forming a film, by injecting all the gas from the side of the plate to the entire periphery of the back surface of the thin plate, the organic agent for film formation wraps around the periphery of the back of the thin plate. The purpose of the present invention is to provide a film forming apparatus that prevents this.
第２図はこの発明の一実施例の成膜装置の主要構成要素
を示す切断端面図である。FIG. 2 is a cut end view showing the main components of a film forming apparatus according to an embodiment of the present invention.
図において、第１図に示し之従来例の符号と同一符号は
同等部分を示す。（３）は板状体（１ａ）の内部に真空
孔（：ｔｃ）を収り囲んで設けられ乾燥しｆｃｌｔＩｌ
圧の空気、窒素などの気体が送給されてくる高圧気体室
、（４ａ）および（４ｂ）は一方の端部が板状体（ｌａ
）の側面の上部に開口し他方の端部が高圧気体室（３）
内に開口するＬうに設けられ高圧気体室（３）内の高圧
気体を、板状体（１ａ）の上面上に真空吸着されこの、
Ａｇｍ例での薄板体であるウェーッＳ卿の裏面の周縁部
へ噴射させる気体噴射孔である。なお、板状体（１ａ）
の上面上Ｖｃ真空吸右されたウェーッＳ＠Ｊの裏面の全
周縁部へ一様に高圧気体を噴射させる工う顛気体噴射孔
（４ａ）、 （４に＋）と同様の気体噴射孔が多数設け
られている。（５ａ）および（５ｂ）は一方の端部が高
圧気体室（３）内に開口し他方の端部が回転軸（４ｂ）
の側面に開口するように設けられ高圧気体室（３）内へ
高圧気体を送給する高圧気体送給孔、１６１は回転軸（
４ｂ） ’ｆｃ収り囲み回転軸（１ｂ）側が開口するコ
の字状の断面形状を有し尚圧気体送給孔（５ａ）、 （
５ｂ）の開口を覆う工うに設けられた送給孔連結環であ
る。In the figure, the same reference numerals as those in the conventional example shown in FIG. 1 indicate equivalent parts. (3) is provided inside the plate-shaped body (1a) to enclose the vacuum hole (:tc) and is dried.
The high-pressure gas chambers (4a) and (4b) to which pressurized air, nitrogen, and other gases are supplied have one end connected to a plate-shaped body (la
) and the other end is a high-pressure gas chamber (3).
The high-pressure gas in the high-pressure gas chamber (3) provided in the L channel opening inward is vacuum-adsorbed onto the upper surface of the plate-shaped body (1a).
This is a gas injection hole that injects gas to the peripheral edge of the back surface of the thin plate body in the Agm example. In addition, the plate-shaped body (1a)
A gas injection hole similar to the gas injection hole (4a) (+ in 4) is used to uniformly inject high-pressure gas to the entire periphery of the back surface of the Web S@J which is vacuum-absorbed by Vc on the top surface. There are many. (5a) and (5b) have one end opening into the high pressure gas chamber (3) and the other end opening into the rotating shaft (4b).
A high-pressure gas supply hole 161 is provided to open on the side surface of the high-pressure gas chamber (3) and supplies high-pressure gas into the high-pressure gas chamber (3).
4b) A pressurized gas supply hole (5a) having a U-shaped cross-sectional shape with an opening on the side of the fc enclosing rotating shaft (1b);
5b) is a feed hole connecting ring provided in a hole that covers the opening.
なお、送給孔連結環（６）の開口端面は比較的柔軟な０
リング（図示せず）などを介して回転軸（ｌｂ）の側面
に接して回転軸（１ｂ）の回転に支障のないように構成
されている。（７）は一方の端部が送給孔連結環１６１
の側壁を直通して送給孔連結環１６＋内に開口し他方の
端部が面圧気体源（図示せず）に連結され之鵡圧気体送
給管である。Note that the opening end surface of the feed hole connecting ring (6) is relatively flexible.
It is configured to be in contact with the side surface of the rotating shaft (lb) via a ring (not shown) or the like so that rotation of the rotating shaft (1b) is not hindered. (7) has one end connected to the feed hole connecting ring 161.
This is a pressure gas feed pipe that passes directly through the side wall of the feed hole and opens into the feed hole connecting ring 16+, and the other end is connected to a surface pressure gas source (not shown).
次に、この実施例の装置の作用について説明するＯ
まず、前工程から搬送され几ウェーハ（７）をその主面
の中心部が真空孔（１Ｃ）上に位置するようにして板状
体（１ａ）の上面上に載置して真空吸着する。Next, the operation of the apparatus of this embodiment will be explained. 1a) and vacuum suction.
次に、間圧気体源（図示せず）から高圧気体送給管（７
）、送給孔連結環（６）おＬび高圧気体送給孔（５ａＬ
（５ｂ） ｔ−通して高圧気体室（３）内へ面圧気体を
送給し、この高圧気体室（３）内へ送給された高圧気体
を気体噴射孔（４ａ）、 （４ｂ）からウェーハ（７）
の裏面の全周縁部へ噴射させる。次いで、レジスト剤調
下管（２）から所装置の成膜用レジスト剤＋５１１ ’
ｔ−ウェーハ…の主面の中心部上に滴下したのちに、回
転軸（ｌｂ） ’に図示矢印Ｒ方向に回転させてウェー
ハａ１ヲ回転させると、ウェーハ…の回転による遠心力
によって、成膜用レジスト剤６υがウェーハ（７）の主
面の中心部から周縁へ向って広がり周縁からレジスト剤
ｂＩＪの不要部分が外部へ飛散してウェーハ■の主面上
に一点鎖線で量水する所望膜厚のこの、ｌ！施例での有
機膜であるレジスト膜（５１ａ）が成膜される。Next, a high pressure gas supply pipe (7
), feed hole connecting ring (6)L and high pressure gas feed hole (5aL
(5b) Supply surface pressure gas into the high pressure gas chamber (3) through the t-, and the high pressure gas supplied into the high pressure gas chamber (3) from the gas injection holes (4a) and (4b). Wafer (7)
Spray on the entire periphery of the back side. Next, the resist agent for film formation +511' of the desired device is supplied from the resist agent lowering pipe (2).
After dropping the drop onto the center of the main surface of the wafer, when the wafer a1 is rotated around the rotation axis (lb)' in the direction of the arrow R shown in the figure, the centrifugal force caused by the rotation of the wafer causes the film to be formed. The resist agent 6υ spreads from the center of the main surface of the wafer (7) toward the periphery, and unnecessary parts of the resist agent bIJ scatter from the periphery to the outside, forming a desired film on the main surface of the wafer (7) as shown by the dotted line. Thick thick l! A resist film (51a), which is an organic film in the example, is formed.
この実施例の装置では、ウェーハ■の裏面の全周縁部へ
気体噴射孔（４ａ）、 （４１））から面圧気体を噴射
させるので、成膜用レジスト剤６１１のウェーハーの周
縁から外部へ飛散する不要部分のウェーハ■の裏面側へ
の回り込みを防止することができる。従って、第１図に
示した従来例の工うに、成膜用レジスト剤１３１１の不
要部分のウェーッ・−の裏面側への回り込みによって、
後工程における収り扱いに支障が生ずるのをなくすこと
ができる。In the apparatus of this embodiment, surface pressure gas is injected from the gas injection holes (4a), (41)) to the entire periphery of the back surface of the wafer (2), so that the resist agent 611 for film formation is scattered from the periphery of the wafer to the outside. It is possible to prevent unnecessary portions of the wafer from moving around to the back side of the wafer. Therefore, in the conventional technique shown in FIG.
It is possible to eliminate any problems that may arise in handling the product in the post-process.
第３図はこの発明の他の実施例の成膜装置の主要構成要
素を示す切断端面図である。FIG. 3 is a cut end view showing the main components of a film forming apparatus according to another embodiment of the present invention.
図ＶＣおいて、第１図および第２図に示した符号と同一
符号は同等部分を示す。In FIG. VC, the same symbols as those shown in FIGS. 1 and 2 indicate equivalent parts.
この実施例では、気体噴射孔（４ａ）、 （４ｂ）は一
方の端部が板状体（ｌａ）の側面の上部に開口し他方の
端部が板状体（１ａ）の下面の回転軸（１ｂ）の固４＃
部分以外の部分に開口するように設けられ、送給孔連結
環（６１は回転軸（ｌｂ）を収り囲み板状体Ｃ１＆）の
下面に接し気体噴射孔（４ａ）、 （４ｂ）の開口？覆
うように設けられている。この実施例においても、第２
図に示し之実施例と同様の効果があることは容易に理解
されよう。In this embodiment, one end of the gas injection holes (4a) and (4b) opens at the upper side of the plate-shaped body (la), and the other end opens at the rotation axis of the lower surface of the plate-shaped body (1a). (1b) Hard 4#
The gas injection holes (4a) and (4b) are in contact with the lower surface of the feed hole connecting ring (61 is a plate-shaped body C1& that encloses the rotating shaft (lb)) ? It is designed to cover. In this embodiment as well, the second
It will be easily understood that this embodiment has the same effect as the embodiment shown in the figure.
なお、これまで、ウェーッ１−の主面上にレジスト膜（
５ｎ）を成膜する成膜装置を例にとり述べ比が、この発
明は薄板体の主面上に有機膜を成膜する成膜装置一般に
適用できる。Note that until now, a resist film (
The present invention is applicable to general film forming apparatuses that form an organic film on the main surface of a thin plate body.
以上、説明したように、この発明の成膜装置では、スピ
ンナーの板状体の上面上に真空吸着されこの板状体の上
面の形状より大きい形状の薄板体の主面上に有機膜を成
膜１−る際に、薄板体の裏面の全周縁部へ板状体の側面
から気体を噴射させるようにしたので、成膜用有機剤の
薄板体の裏面の周縁部への回り込み？防止することがで
き、この成膜用有機剤の薄板体の裏面の周縁部への回り
込みに工って後工程における収り扱いに支障が生するの
をなくすことができる。As explained above, in the film forming apparatus of the present invention, an organic film is vacuum-adsorbed onto the top surface of a plate-like body of a spinner and formed on the main surface of a thin plate body whose shape is larger than the top surface of this plate-like body. When forming the film, the gas was injected from the side of the plate to the entire periphery of the back of the thin plate, so the organic agent for film formation did not get around to the periphery of the back of the thin plate. It is possible to prevent the film-forming organic agent from flowing around to the peripheral edge of the back surface of the thin plate body, thereby eliminating problems in handling in subsequent steps.
第１図は従来の成膜装置の一例の主要構成要素を示す正
面図、第２図はこの発明の一実施例の成膜装置の主要構
成要素を示す切断端面図、第３図はこの発明の他の実施
例の成膜装置の主要構成要素をボす切断端面図である。
図において、ｉｌｌはスピンナー、（ｌａ）は板状体、
（１ｂ）は回転軸、（１Ｃ）は真空孔、（３）は高圧気
体室、（４ａ）および（４ｂ）は気体噴射孔、（５ａ）
および（５ｂ）は高圧気体送給孔、（６）は送給孔連結
環、（７）は高圧気体送給管、…はウェーッ・（薄板体
）、（５１ａ）はレジスト膜（有機膜）である。
なお、図中同一符号はそれぞれ同一または相当部分音ホ
す。
代理人 大岩増雄
第１図
第２図
第３図FIG. 1 is a front view showing the main components of an example of a conventional film forming apparatus, FIG. 2 is a cut end view showing the main components of a film forming apparatus according to an embodiment of the present invention, and FIG. 3 is a front view showing the main components of a film forming apparatus according to an embodiment of the present invention. FIG. 3 is a cut end view showing main components of a film forming apparatus according to another embodiment of the present invention. In the figure, ill is a spinner, (la) is a plate-like body,
(1b) is the rotating shaft, (1C) is the vacuum hole, (3) is the high pressure gas chamber, (4a) and (4b) are the gas injection holes, (5a)
and (5b) is a high-pressure gas supply hole, (6) is a supply hole connection ring, (7) is a high-pressure gas supply pipe, ... is a thin plate (thin plate), and (51a) is a resist film (organic film). It is. Note that the same reference numerals in the figures represent the same or equivalent partial sounds. Agent Masuo Oiwa Figure 1 Figure 2 Figure 3
Claims (1)
体が載置され真空吸看される板状体と、この板状体の下
面の中心部に先端が固着され上記板状体を回転させる回
転軸と、この回転軸の軸線に沿い一方の端部が上記板状
体の上面に開口し他方の端部が真空装置に連通ずるよう
に設けられ上記板状体の上面１に上記薄板体を真空吸着
する真空孔とを有するスピンナーを備え、上記薄板体の
主、面上に有機膜を成膜するものにおいて、上記板状体
の上面上に真空吸看された上記薄板体の裏面の全周縁部
へｔ配板状体の側面から気体を噴射させる工ヴにしたこ
とを特徴とする成膜装置。+11 A plate-shaped body having a shape larger than the shape of the upper surface is placed on the upper surface and subjected to vacuum suction, and a rotation that rotates the plate-shaped body whose tip is fixed to the center of the lower surface of this plate-shaped body. A shaft is provided along the axis of the rotating shaft so that one end thereof is open to the upper surface of the plate-shaped body and the other end is communicated with a vacuum device, and the thin plate body is placed on the upper surface 1 of the plate-shaped body. In a spinner having a vacuum hole for vacuum suction and forming an organic film on the main surface of the thin plate body, the entire back surface of the thin plate body that is vacuum sucked onto the top surface of the plate body. A film forming apparatus characterized in that a gas is injected from a side surface of a plate-shaped body to a peripheral portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24906183A JPS60137016A (en) | 1983-12-26 | 1983-12-26 | Film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24906183A JPS60137016A (en) | 1983-12-26 | 1983-12-26 | Film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60137016A true JPS60137016A (en) | 1985-07-20 |
Family
ID=17187423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24906183A Pending JPS60137016A (en) | 1983-12-26 | 1983-12-26 | Film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60137016A (en) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4996942A (en) * | 1987-03-31 | 1991-03-05 | Epsilon Technology, Inc. | Rotatable substrate supporting susceptor with temperature sensors |
| US5117769A (en) * | 1987-03-31 | 1992-06-02 | Epsilon Technology, Inc. | Drive shaft apparatus for a susceptor |
| US5356476A (en) * | 1992-06-15 | 1994-10-18 | Materials Research Corporation | Semiconductor wafer processing method and apparatus with heat and gas flow control |
| US5370739A (en) * | 1992-06-15 | 1994-12-06 | Materials Research Corporation | Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD |
| US5647911A (en) * | 1993-12-14 | 1997-07-15 | Sony Corporation | Gas diffuser plate assembly and RF electrode |
| US5902407A (en) * | 1987-03-31 | 1999-05-11 | Deboer; Wiebe B. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
| US6264752B1 (en) * | 1998-03-13 | 2001-07-24 | Gary L. Curtis | Reactor for processing a microelectronic workpiece |
| US6318385B1 (en) | 1998-03-13 | 2001-11-20 | Semitool, Inc. | Micro-environment chamber and system for rinsing and drying a semiconductor workpiece |
| US6350319B1 (en) * | 1998-03-13 | 2002-02-26 | Semitool, Inc. | Micro-environment reactor for processing a workpiece |
| US6413436B1 (en) | 1999-01-27 | 2002-07-02 | Semitool, Inc. | Selective treatment of the surface of a microelectronic workpiece |
| US6423642B1 (en) | 1998-03-13 | 2002-07-23 | Semitool, Inc. | Reactor for processing a semiconductor wafer |
| US6492284B2 (en) | 1999-01-22 | 2002-12-10 | Semitool, Inc. | Reactor for processing a workpiece using sonic energy |
| US6511914B2 (en) | 1999-01-22 | 2003-01-28 | Semitool, Inc. | Reactor for processing a workpiece using sonic energy |
| US6543156B2 (en) | 2000-01-12 | 2003-04-08 | Semitool, Inc. | Method and apparatus for high-pressure wafer processing and drying |
| US6548411B2 (en) | 1999-01-22 | 2003-04-15 | Semitool, Inc. | Apparatus and methods for processing a workpiece |
| US6632292B1 (en) | 1998-03-13 | 2003-10-14 | Semitool, Inc. | Selective treatment of microelectronic workpiece surfaces |
| US6680253B2 (en) | 1999-01-22 | 2004-01-20 | Semitool, Inc. | Apparatus for processing a workpiece |
| JP2007048814A (en) * | 2005-08-08 | 2007-02-22 | Mitsubishi Electric Corp | Substrate holding device, semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
| US7217325B2 (en) | 1999-01-22 | 2007-05-15 | Semitool, Inc. | System for processing a workpiece |
| US7438788B2 (en) | 1999-04-13 | 2008-10-21 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
-
1983
- 1983-12-26 JP JP24906183A patent/JPS60137016A/en active Pending
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4996942A (en) * | 1987-03-31 | 1991-03-05 | Epsilon Technology, Inc. | Rotatable substrate supporting susceptor with temperature sensors |
| US5117769A (en) * | 1987-03-31 | 1992-06-02 | Epsilon Technology, Inc. | Drive shaft apparatus for a susceptor |
| US5902407A (en) * | 1987-03-31 | 1999-05-11 | Deboer; Wiebe B. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
| US5356476A (en) * | 1992-06-15 | 1994-10-18 | Materials Research Corporation | Semiconductor wafer processing method and apparatus with heat and gas flow control |
| US5370739A (en) * | 1992-06-15 | 1994-12-06 | Materials Research Corporation | Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD |
| US5647911A (en) * | 1993-12-14 | 1997-07-15 | Sony Corporation | Gas diffuser plate assembly and RF electrode |
| US5908508A (en) * | 1993-12-14 | 1999-06-01 | Tokyo Electron Limited | Gas diffuser plate assembly and RF electrode |
| US6660098B2 (en) | 1998-03-13 | 2003-12-09 | Semitool, Inc. | System for processing a workpiece |
| US6997988B2 (en) | 1998-03-13 | 2006-02-14 | Semitool, Inc. | System for processing a workpiece |
| US6350319B1 (en) * | 1998-03-13 | 2002-02-26 | Semitool, Inc. | Micro-environment reactor for processing a workpiece |
| US7399713B2 (en) | 1998-03-13 | 2008-07-15 | Semitool, Inc. | Selective treatment of microelectric workpiece surfaces |
| US6423642B1 (en) | 1998-03-13 | 2002-07-23 | Semitool, Inc. | Reactor for processing a semiconductor wafer |
| US6446643B2 (en) | 1998-03-13 | 2002-09-10 | Semitool, Inc. | Micro-environment chamber and system for rinsing and drying a semiconductor workpiece |
| US6447633B1 (en) | 1998-03-13 | 2002-09-10 | Semitdol, Inc. | Reactor for processing a semiconductor wafer |
| US6264752B1 (en) * | 1998-03-13 | 2001-07-24 | Gary L. Curtis | Reactor for processing a microelectronic workpiece |
| US6494956B2 (en) | 1998-03-13 | 2002-12-17 | Semitool, Inc. | System for processing a workpiece |
| US6695914B2 (en) | 1998-03-13 | 2004-02-24 | Semitool, Inc. | System for processing a workpiece |
| US6666922B2 (en) | 1998-03-13 | 2003-12-23 | Semitool, Inc. | System for processing a workpiece |
| US6318385B1 (en) | 1998-03-13 | 2001-11-20 | Semitool, Inc. | Micro-environment chamber and system for rinsing and drying a semiconductor workpiece |
| US6558470B2 (en) | 1998-03-13 | 2003-05-06 | Semitool, Inc. | Reactor for processing a microelectronic workpiece |
| US6632292B1 (en) | 1998-03-13 | 2003-10-14 | Semitool, Inc. | Selective treatment of microelectronic workpiece surfaces |
| US6548411B2 (en) | 1999-01-22 | 2003-04-15 | Semitool, Inc. | Apparatus and methods for processing a workpiece |
| US6680253B2 (en) | 1999-01-22 | 2004-01-20 | Semitool, Inc. | Apparatus for processing a workpiece |
| US6511914B2 (en) | 1999-01-22 | 2003-01-28 | Semitool, Inc. | Reactor for processing a workpiece using sonic energy |
| US6492284B2 (en) | 1999-01-22 | 2002-12-10 | Semitool, Inc. | Reactor for processing a workpiece using sonic energy |
| US7217325B2 (en) | 1999-01-22 | 2007-05-15 | Semitool, Inc. | System for processing a workpiece |
| US6413436B1 (en) | 1999-01-27 | 2002-07-02 | Semitool, Inc. | Selective treatment of the surface of a microelectronic workpiece |
| US7438788B2 (en) | 1999-04-13 | 2008-10-21 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
| US6543156B2 (en) | 2000-01-12 | 2003-04-08 | Semitool, Inc. | Method and apparatus for high-pressure wafer processing and drying |
| JP2007048814A (en) * | 2005-08-08 | 2007-02-22 | Mitsubishi Electric Corp | Substrate holding device, semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
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