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JPS60136156U - semiconductor equipment - Google Patents

semiconductor equipment

Info

Publication number
JPS60136156U
JPS60136156U JP2402684U JP2402684U JPS60136156U JP S60136156 U JPS60136156 U JP S60136156U JP 2402684 U JP2402684 U JP 2402684U JP 2402684 U JP2402684 U JP 2402684U JP S60136156 U JPS60136156 U JP S60136156U
Authority
JP
Japan
Prior art keywords
semiconductor equipment
abstract
inductance element
semiconductor substrate
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2402684U
Other languages
Japanese (ja)
Inventor
康夫 大田
Original Assignee
関西日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 関西日本電気株式会社 filed Critical 関西日本電気株式会社
Priority to JP2402684U priority Critical patent/JPS60136156U/en
Publication of JPS60136156U publication Critical patent/JPS60136156U/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の半導体装置における半導体基板の部分平
面図、第2図は第1図のA−A線に沿う、断面図、第3
図は本考案の一実施例を示す部分平面図、第4図は第3
図のB−B線に沿う断面図、第5図は第3図の要部の概
略斜視図、第6図乃至第10図は第3図におけるインダ
クタンス素子の製造工程例を示すもので、第q図乃至第
10図の各aは部分平面図、第6図乃至第10図の各す
は第6図乃至第10図の各aのC−C線、D−D線、E
−E線、F−F線、G−G線に沿う断面図であり、第1
1図及び第12図は本考案の他の二実施例を示す各々要
部の概略斜視図である。 6・・・半導体基板、8・・・インダクタンス素子、9
〜12・・・絶縁層、K、、 K1’、 K工″・・・
渦巻状金属・層、K3. K3’、 K3″・・・渦巻
状金属層。 第」 (’a)   −
FIG. 1 is a partial plan view of a semiconductor substrate in a conventional semiconductor device, FIG. 2 is a cross-sectional view taken along line A-A in FIG. 1, and FIG.
The figure is a partial plan view showing one embodiment of the present invention, and FIG.
5 is a schematic perspective view of the main part of FIG. 3, and FIGS. 6 to 10 show an example of the manufacturing process of the inductance element in FIG. 3. Each a in FIG. q to FIG. 10 is a partial plan view, and each a in FIG. 6 to FIG.
- It is a sectional view along the E line, the F-F line, and the G-G line, and the first
1 and 12 are schematic perspective views of essential parts of two other embodiments of the present invention. 6... Semiconductor substrate, 8... Inductance element, 9
~12... Insulating layer, K, K1', K work''...
Spiral metal layer, K3. K3', K3''... spiral metal layer.''('a) −

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体基板上に複数段に各段毎に絶縁層を介して渦巻状
金属層を順次直列接続して形成してなるインダクタンス
素子を有することを特徴とする半導体装置。
1. A semiconductor device comprising an inductance element formed by sequentially connecting spiral metal layers in series in a plurality of stages with an insulating layer interposed between each stage on a semiconductor substrate.
JP2402684U 1984-02-21 1984-02-21 semiconductor equipment Pending JPS60136156U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2402684U JPS60136156U (en) 1984-02-21 1984-02-21 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2402684U JPS60136156U (en) 1984-02-21 1984-02-21 semiconductor equipment

Publications (1)

Publication Number Publication Date
JPS60136156U true JPS60136156U (en) 1985-09-10

Family

ID=30517797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2402684U Pending JPS60136156U (en) 1984-02-21 1984-02-21 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS60136156U (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02302037A (en) * 1989-05-16 1990-12-14 Mitsubishi Electric Corp Formation of pattern
EP1211799A1 (en) * 1999-05-18 2002-06-05 Niigata Seimitsu Co., Ltd. Lc oscillator
WO2004025730A1 (en) * 2002-08-09 2004-03-25 Renesas Technology Corp. Semiconductor device and memory card using same
JP2006245273A (en) * 2005-03-03 2006-09-14 Nippon Telegr & Teleph Corp <Ntt> Inductor
WO2008016089A1 (en) 2006-08-01 2008-02-07 Nec Corporation Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon
JP2013520031A (en) * 2010-03-10 2013-05-30 アルテラ コーポレイション Integrated circuit having inductors connected in series
JP2013528295A (en) * 2010-06-08 2013-07-08 インターナショナル・ビジネス・マシーンズ・コーポレーション Transmission lines for integrated photonic applications
JP2018137479A (en) * 2018-05-02 2018-08-30 ローム株式会社 Voltage generation device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02302037A (en) * 1989-05-16 1990-12-14 Mitsubishi Electric Corp Formation of pattern
EP1211799A1 (en) * 1999-05-18 2002-06-05 Niigata Seimitsu Co., Ltd. Lc oscillator
EP1211799A4 (en) * 1999-05-18 2002-09-11 Niigata Seimitsu Co Ltd OSCILLATOR LC
WO2004025730A1 (en) * 2002-08-09 2004-03-25 Renesas Technology Corp. Semiconductor device and memory card using same
JP2006245273A (en) * 2005-03-03 2006-09-14 Nippon Telegr & Teleph Corp <Ntt> Inductor
WO2008016089A1 (en) 2006-08-01 2008-02-07 Nec Corporation Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon
US9923045B2 (en) 2006-08-01 2018-03-20 Renesas Electronics Corporation Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon
US10192951B2 (en) 2006-08-01 2019-01-29 Renesas Electronics Corporation Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon
JP2013520031A (en) * 2010-03-10 2013-05-30 アルテラ コーポレイション Integrated circuit having inductors connected in series
JP2013528295A (en) * 2010-06-08 2013-07-08 インターナショナル・ビジネス・マシーンズ・コーポレーション Transmission lines for integrated photonic applications
JP2018137479A (en) * 2018-05-02 2018-08-30 ローム株式会社 Voltage generation device

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