JPS60136156U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS60136156U JPS60136156U JP2402684U JP2402684U JPS60136156U JP S60136156 U JPS60136156 U JP S60136156U JP 2402684 U JP2402684 U JP 2402684U JP 2402684 U JP2402684 U JP 2402684U JP S60136156 U JPS60136156 U JP S60136156U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor equipment
- abstract
- inductance element
- semiconductor substrate
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来の半導体装置における半導体基板の部分平
面図、第2図は第1図のA−A線に沿う、断面図、第3
図は本考案の一実施例を示す部分平面図、第4図は第3
図のB−B線に沿う断面図、第5図は第3図の要部の概
略斜視図、第6図乃至第10図は第3図におけるインダ
クタンス素子の製造工程例を示すもので、第q図乃至第
10図の各aは部分平面図、第6図乃至第10図の各す
は第6図乃至第10図の各aのC−C線、D−D線、E
−E線、F−F線、G−G線に沿う断面図であり、第1
1図及び第12図は本考案の他の二実施例を示す各々要
部の概略斜視図である。
6・・・半導体基板、8・・・インダクタンス素子、9
〜12・・・絶縁層、K、、 K1’、 K工″・・・
渦巻状金属・層、K3. K3’、 K3″・・・渦巻
状金属層。
第」
(’a) −FIG. 1 is a partial plan view of a semiconductor substrate in a conventional semiconductor device, FIG. 2 is a cross-sectional view taken along line A-A in FIG. 1, and FIG.
The figure is a partial plan view showing one embodiment of the present invention, and FIG.
5 is a schematic perspective view of the main part of FIG. 3, and FIGS. 6 to 10 show an example of the manufacturing process of the inductance element in FIG. 3. Each a in FIG. q to FIG. 10 is a partial plan view, and each a in FIG. 6 to FIG.
- It is a sectional view along the E line, the F-F line, and the G-G line, and the first
1 and 12 are schematic perspective views of essential parts of two other embodiments of the present invention. 6... Semiconductor substrate, 8... Inductance element, 9
~12... Insulating layer, K, K1', K work''...
Spiral metal layer, K3. K3', K3''... spiral metal layer.''('a) −
Claims (1)
金属層を順次直列接続して形成してなるインダクタンス
素子を有することを特徴とする半導体装置。1. A semiconductor device comprising an inductance element formed by sequentially connecting spiral metal layers in series in a plurality of stages with an insulating layer interposed between each stage on a semiconductor substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2402684U JPS60136156U (en) | 1984-02-21 | 1984-02-21 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2402684U JPS60136156U (en) | 1984-02-21 | 1984-02-21 | semiconductor equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60136156U true JPS60136156U (en) | 1985-09-10 |
Family
ID=30517797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2402684U Pending JPS60136156U (en) | 1984-02-21 | 1984-02-21 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60136156U (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02302037A (en) * | 1989-05-16 | 1990-12-14 | Mitsubishi Electric Corp | Formation of pattern |
EP1211799A1 (en) * | 1999-05-18 | 2002-06-05 | Niigata Seimitsu Co., Ltd. | Lc oscillator |
WO2004025730A1 (en) * | 2002-08-09 | 2004-03-25 | Renesas Technology Corp. | Semiconductor device and memory card using same |
JP2006245273A (en) * | 2005-03-03 | 2006-09-14 | Nippon Telegr & Teleph Corp <Ntt> | Inductor |
WO2008016089A1 (en) | 2006-08-01 | 2008-02-07 | Nec Corporation | Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon |
JP2013520031A (en) * | 2010-03-10 | 2013-05-30 | アルテラ コーポレイション | Integrated circuit having inductors connected in series |
JP2013528295A (en) * | 2010-06-08 | 2013-07-08 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Transmission lines for integrated photonic applications |
JP2018137479A (en) * | 2018-05-02 | 2018-08-30 | ローム株式会社 | Voltage generation device |
-
1984
- 1984-02-21 JP JP2402684U patent/JPS60136156U/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02302037A (en) * | 1989-05-16 | 1990-12-14 | Mitsubishi Electric Corp | Formation of pattern |
EP1211799A1 (en) * | 1999-05-18 | 2002-06-05 | Niigata Seimitsu Co., Ltd. | Lc oscillator |
EP1211799A4 (en) * | 1999-05-18 | 2002-09-11 | Niigata Seimitsu Co Ltd | OSCILLATOR LC |
WO2004025730A1 (en) * | 2002-08-09 | 2004-03-25 | Renesas Technology Corp. | Semiconductor device and memory card using same |
JP2006245273A (en) * | 2005-03-03 | 2006-09-14 | Nippon Telegr & Teleph Corp <Ntt> | Inductor |
WO2008016089A1 (en) | 2006-08-01 | 2008-02-07 | Nec Corporation | Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon |
US9923045B2 (en) | 2006-08-01 | 2018-03-20 | Renesas Electronics Corporation | Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon |
US10192951B2 (en) | 2006-08-01 | 2019-01-29 | Renesas Electronics Corporation | Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon |
JP2013520031A (en) * | 2010-03-10 | 2013-05-30 | アルテラ コーポレイション | Integrated circuit having inductors connected in series |
JP2013528295A (en) * | 2010-06-08 | 2013-07-08 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Transmission lines for integrated photonic applications |
JP2018137479A (en) * | 2018-05-02 | 2018-08-30 | ローム株式会社 | Voltage generation device |
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