JPS60126874A - Optical coupling semiconductor device - Google Patents
Optical coupling semiconductor deviceInfo
- Publication number
- JPS60126874A JPS60126874A JP58233588A JP23358883A JPS60126874A JP S60126874 A JPS60126874 A JP S60126874A JP 58233588 A JP58233588 A JP 58233588A JP 23358883 A JP23358883 A JP 23358883A JP S60126874 A JPS60126874 A JP S60126874A
- Authority
- JP
- Japan
- Prior art keywords
- light
- electrode
- emitting element
- resin
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野]
この発明は発光素子と受光素子の受光面が対向され、前
記発光菓子の光信号によって受光素子を駆動することの
できる光結合半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to an optically coupled semiconductor device in which the light receiving surfaces of a light emitting element and a light receiving element face each other, and the light receiving element can be driven by an optical signal from the light emitting confectionery.
最近、新しい固体素子として半導体発光素子と受光素子
が光学的に且つ一体的に結合した光結合半導体装置(以
下フォトカプラと呼ぶ)が注目されており、固体リレー
や伝送線のアイソレーションなどに広く使用されている
。Recently, optically coupled semiconductor devices (hereinafter referred to as photocouplers), in which a semiconductor light-emitting element and a light-receiving element are optically and integrally coupled, have been attracting attention as a new solid-state device, and are widely used for solid-state relays, transmission line isolation, etc. It is used.
特にフォトカプラを同一基板上に複数個並設したフォト
カプラアレイやフォトカプラと集積回路とを組み合わせ
た回路装置など(二輪理回路又は通話回路に極めて有効
に使用されている。In particular, photocoupler arrays in which a plurality of photocouplers are arranged side by side on the same substrate, and circuit devices that combine photocouplers and integrated circuits (very effectively used in two-wheel circuits or communication circuits) are used.
このフォトカプラを製造するに当って次の問題点を解決
する事が重要となる。In manufacturing this photocoupler, it is important to solve the following problems.
(1)発光素子と受光素子間の距離を200μm以。(1) The distance between the light emitting element and the light receiving element is 200 μm or more.
上離して両者間の絶縁耐圧を大きくすること。Separate the top and bottom to increase the dielectric strength between the two.
(2)複数の受光感度領域において一方の光信号が他方
の受光感度領域C影響を与えて誤動作をさせないこと。(2) In a plurality of light-receiving sensitivity regions, one optical signal should not affect the other light-receiving sensitivity region C and cause malfunction.
(31発光素子と受光素子間の光伝達効率が為いこと。(31. The light transmission efficiency between the light emitting element and the light receiving element is low.
従来この種のフォトカプラは、例えば発光菓子と受光素
子とをそれぞれの発光面及び受光面が存在する面を相対
向して配置し、両面間に透光性の樹脂或いはガラスを介
在させた構造となっている。Conventionally, this type of photocoupler has a structure in which, for example, a light-emitting confectionery and a light-receiving element are arranged with their light-emitting and light-receiving surfaces facing each other, with a translucent resin or glass interposed between both surfaces. It becomes.
この構造のフォトカプラは発光素子からの光が受光素子
の光感度領域だけでなく、それ以外の領域にも照射され
る為、他の受光素子の光感度領域にも影響を与えるため
の誤動作の原因となる。したかってフォトカプラやフォ
トカブラ付集檀回路を製作するに当って集積密度を高く
する1つの整置となっていた。さらに発光素子の照射光
量の半分以上が外部へ洩れるため、光結合効率が低いと
いう欠点があった。したがってこれらの欠点がフォトカ
プラの量産歩留りを低下させる最大の原因になっていた
。In a photocoupler with this structure, the light from the light emitting element is irradiated not only to the photosensitivity area of the photodetector, but also to other areas, so there is a risk of malfunction that may affect the photosensitivity areas of other photodetectors. Cause. Therefore, this arrangement was used to increase the integration density when producing photocouplers and integrated circuits with photocouplers. Furthermore, since more than half of the amount of light irradiated by the light emitting element leaks to the outside, there is a drawback that the optical coupling efficiency is low. Therefore, these drawbacks have been the biggest cause of lowering the mass production yield of photocouplers.
この発明は上述した従来技術の欠点を改良したもので信
頼性が高くかっ歩留りょ<量産することのできる光結合
半導体装置を提供することを目的とする。It is an object of the present invention to provide an optically coupled semiconductor device which improves the above-mentioned drawbacks of the prior art and is highly reliable and can be mass-produced with low yield.
この目的を達成するため、本発明の特徴とするところは
、発光素子と受光素子の間に透明絶縁基板を備え、この
絶縁板の上に発光菓子な取り囲むリング状の電極を形成
し、発光菓子な覆うsl二特性の異なる2N類の樹脂を
それぞれリング状電極まで延長した構造とすることであ
る。In order to achieve this object, the present invention is characterized by providing a transparent insulating substrate between a light emitting element and a light receiving element, forming a ring-shaped electrode surrounding the luminescent confectionery on this insulating plate, and forming a ring-shaped electrode surrounding the luminescent confectionery. 2N type resins with different sl and sl characteristics are each extended to a ring-shaped electrode.
以下実施例について本発明を詳°述する。 The present invention will be described in detail with reference to Examples below.
第1図〜第3図は、本発明の一実施例による2つの光感
度領域をもったフォトカプラの製造工程を示す。この種
の受光素子、透光性絶縁板、発光素子から構成さnる基
本的な構造5:おいて、第1図は透光性絶縁板について
示し、た。透光性絶縁板(1)はたとえば厚さ250μ
mのガラス板を使用し、一方の面ζ二AJ又はCr−A
u等の金属を蒸着によって形成し、発光菓子を電気的ζ
二結ぶための一& i3+及び(4)をJ?BP技術(
=よって形成する。電極(3)は発光素7の寸法より大
きく約100μmの幅をもったリング状とし、その中心
部に向って発光菓子の一方の電極用として枝状に延長す
る。又この第1の電極(3)はとなりの発光素子用の第
1の電極とも結ばれ、電極取り出しのための共通のボン
デングバットを形成している。第2の電極(4)及び(
4つは第1の電極(3)を100μm以上離れて取り囲
むようにそれぞれ配置され、電極取り出しのためのそれ
ぞれのボンデングバットを形成している。透光性絶縁板
(1)の他の領域には、受光素子の電極を外部端子へ接
続するための開口部(2)を超音波加工かエツチングに
よって形成し、・絶縁基板(1)の大きさは、受光素子
と同じサイズの形状で精度良くブレードカッターによっ
て切断する。1 to 3 show the manufacturing process of a photocoupler having two photosensitivity regions according to an embodiment of the present invention. Basic structure 5 consisting of this type of light-receiving element, a light-transmitting insulating plate, and a light-emitting element: FIG. 1 shows a light-transmitting insulating plate. For example, the transparent insulating plate (1) has a thickness of 250 μm.
m glass plate, one side ζ2AJ or Cr-A
U is formed by vapor deposition, and luminescent confectionery is electrically
1 & i3+ and (4) to connect 2 J? BP technology (
=Thus, it is formed. The electrode (3) has a ring shape with a width of about 100 μm, which is larger than the size of the light emitting element 7, and extends in a branch shape toward the center as one electrode of the light emitting confectionery. This first electrode (3) is also connected to a first electrode for an adjacent light emitting element, forming a common bonding butt for taking out the electrode. Second electrode (4) and (
The four electrodes are arranged so as to surround the first electrode (3) at a distance of 100 μm or more, and form respective bonding butts for taking out the electrodes. In other areas of the translucent insulating plate (1), an opening (2) for connecting the electrode of the light receiving element to an external terminal is formed by ultrasonic machining or etching. The shape is precisely cut with a blade cutter to the same size as the photodetector.
第2図は第1図A −A’部分を拡大した断面図である
。同図において、透光性絶縁板(1)上に形成した第1
の電極(3)のリング状電極の中心部へ延ばした枝状電
極部へ半導体発光素子(5)(12を下LfiDと呼ぶ
)を銀ペースト等を使って固着し、LBDの゛もう一方
の電極を第2の電極(4)の一部ヘボンディング線(6
)によって接続する。FIG. 2 is an enlarged sectional view of the section A-A' in FIG. 1. In the same figure, a first
A semiconductor light emitting device (5) (12 is referred to as the lower LfiD) is fixed to the branch-like electrode part extending toward the center of the ring-like electrode of the electrode (3) using silver paste, etc. Connect the electrode to a part of the second electrode (4) to the bonding wire (6).
) to connect.
この様に透光性絶縁板上に組み立てたLED(51の上
に透光性樹脂(7)を覆う。透光性樹脂(7)は比較欝
粘度が低いため横方向に流れ、第1の電極(3)に形成
したリング状電極部まできて表面張力により流れが止ま
る。この透光性樹脂の量を適量に選ぶことによって同図
に示した様なレンズ状の形状を作ることができる。この
様に形成した屈折率n!をもった透光性樹脂をたとえば
120℃〜150℃で一度キュアーを行ない、この上に
LEDの光を全反射する様な上記透光性樹脂より屈折率
の低いn、をもった第2の樹脂(8)を覆い同じように
固化させる。A transparent resin (7) is covered over the LED (51) assembled on a transparent insulating board in this way.The transparent resin (7) has a relatively low viscosity, so it flows laterally, and the first When it reaches the ring-shaped electrode formed on the electrode (3), the flow stops due to surface tension. By selecting the appropriate amount of this translucent resin, a lens-like shape as shown in the figure can be created. The thus formed translucent resin having a refractive index n! is cured once at, for example, 120°C to 150°C, and then the refractive index of the above-mentioned translucent resin that totally reflects the light from the LED is cured. A second resin (8) with a lower n is covered and similarly solidified.
文箱2の樹脂はLEDの波長に対して不透明な樹脂を使
ってもかまわない。The resin for the text box 2 may be a resin that is opaque to the wavelength of the LED.
第3図は上記透明絶縁板と受光素子を対向させ実装ステ
ム上へ固定させまたものである。FIG. 3 shows the transparent insulating plate and the light receiving element facing each other and fixed onto the mounting stem.
シリコン基板の表面の一部分に拡散法などにより形成さ
れたPN接合を含む受光領域α1)をそなえた受光素子
(10)を用意する。この受光領域は当然ながら前記透
光性絶縁板の発光菓子と対向された位置に配置されてい
る。A light receiving element (10) having a light receiving region α1) including a PN junction formed by a diffusion method or the like on a portion of the surface of a silicon substrate is prepared. Naturally, this light-receiving area is arranged at a position facing the light-emitting confectionery of the translucent insulating plate.
受光素子(1(IIを、金鵬又はセラミックス上にメタ
ライズされたステム上に半田等を使って固着する。The light-receiving element (1 (II) is fixed onto the stem metallized on metal or ceramics using solder or the like.
この上≦二受光菓子と同じ外形をもった透光性絶縁板(
1)を積層し、この外周部を精度良く固定する治具(1
21をはめ込むと同時に、接着性があり、かつ150℃
前後で安定なたとえはシリコン樹脂等(二よつそ透光性
絶縁板を固定する。Above ≦2 A translucent insulating plate with the same external shape as the light-receiving sweets (
A jig (1) for stacking 1) and fixing the outer periphery with precision.
At the same time as fitting 21, it is adhesive and 150℃
An example of something that is stable before and after is silicone resin (two translucent insulating plates are fixed).
同図中(2)は絶縁板゛(1)に設けた開口部で、この
下には受光素子の電極取り出し用のボンディングパット
が複数m並んでおりここから外部電極取り出し端子ヘポ
ンデイング線α東によって電気的(二接続する。又同じ
ように発光素子側は、絶縁板(1)のよ(二設けたLE
Dのボンディングパットから外部電極取り出し端子ヘボ
ンデイング線(14)によって電気的(二接続する。In the same figure, (2) is an opening provided in the insulating plate (1), and below this, bonding pads for taking out the electrodes of the light-receiving element are lined up several meters long. Electrically (two connections are made. Similarly, the light emitting element side is connected to the insulating plate (1) (two LE
Electrical connection is made from the bonding pad D to the external electrode lead terminal using a bonding wire (14).
上記実施例において2つのPN接合をもった受光素子と
発光菓子を組み合わせたフォトカプラについて説明を行
ったが、ホトダイオード、ホトトランジスタ、サイリス
タ、MOS、GTO等とこれらを組み合わせた複合形の
光結合半導体装置であっても本技術の輪中であることは
当然であふ。In the above embodiment, a photocoupler that combines a light-receiving element with two PN junctions and a light-emitting confectionery was explained, but a photocoupler that combines photodiodes, phototransistors, thyristors, MOSs, GTOs, etc. It goes without saying that even devices are part of this technology.
又、本発明実施例では第1電極に形成した発光菓子を取
り囲むように形成したリング状の電極は、受光素子の受
光感度領域の仕意の形状に対応して形成することが可能
であり、したがってLIDを覆う透光性樹脂の形状もそ
れと同じように仕意仁作ることができる。Furthermore, in the embodiment of the present invention, the ring-shaped electrode formed to surround the luminescent confectionery formed on the first electrode can be formed in accordance with the intended shape of the light-receiving sensitivity region of the light-receiving element. Therefore, the shape of the translucent resin covering the LID can be made in the same way.
本発明によれば次のような優れた効果が得られる。 According to the present invention, the following excellent effects can be obtained.
(1)発光素子の光を有効に受光感度領域へ導びくこと
ができ光学的に十分密に結合されるため光伝達効率が商
い。(1) The light from the light-emitting element can be effectively guided to the light-receiving sensitivity region, and the light transmission efficiency is improved because the light is optically coupled sufficiently tightly.
(2)発光素子と受光素子の位置合わせ精度を高めるこ
とができ量産性が良い。(2) The accuracy of alignment between the light emitting element and the light receiving element can be improved, and mass productivity is good.
(3)隣接する発光素子の影響な少くすることができ、
誤動作の発注が肪止さnる。(3) The influence of adjacent light emitting elements can be reduced,
Orders due to malfunctions will be delayed.
第1図は本発明の一実施例の透光性絶縁板の平面図、第
2図は第1図A−A’部の断面図、第3図は本発明の一
実施例によるフォトカブラを実装した時の断面図である
。
1 透光性絶縁基板、 2 透光性絶縁基板(二設けた
開口部、 3 第1の電極、
4 第2の電極、 5 LED
6 ボンデング線、7 第1の透光性樹脂、8 第2の
樹脂膜、 9 ステム、
10 受光素子、
11 受光素子の受光感度領域、
12 固定用治具、 13.14 ボンデング線、代理
人 弁理士 則 近 憲 佑
(ばか1名)Fig. 1 is a plan view of a translucent insulating plate according to an embodiment of the present invention, Fig. 2 is a sectional view taken along the line A-A' in Fig. 1, and Fig. 3 is a photocoupler according to an embodiment of the present invention. It is a sectional view when it is mounted. 1 Transparent insulating substrate, 2 Transparent insulating substrate (two openings, 3 first electrode, 4 second electrode, 5 LED, 6 bonding wire, 7 first transparent resin, 8 second resin film, 9 stem, 10 light-receiving element, 11 light-receiving sensitivity area of light-receiving element, 12 fixing jig, 13.14 bonding wire, agent patent attorney Kensuke Chika (1 idiot)
Claims (1)
と、半導体受光素子の上4:積層された透光性絶縁基板
と、この透光性絶縁基板の上に前記半導体受光素子に対
向、して配置された半導体発光菓子とから構成された光
結合半導体装置において、前記透光性絶縁板の上に発光
素子の電極が形成され、第lの電極が半導体発光素子を
取り囲むよう5二配置され、かつその中央部ζ二おいて
電気的に接続され、半導体発光素子、のもう下方の電極
がそれらを取り囲むようC二装置された第2の電極へ金
属線で接続され、上記第1の電極の内側まで透明なml
の樹脂が半導体発光素子を覆うように形成され、さらに
第2の電極まで第2の樹脂でその上を覆ったことを特徴
とする光結合半導体装置。 −+21第1の電極が複数の半導体発光菓子の一方の電
極と共通にしたことを特徴とする特許請求の範囲第1項
記載の光結合半導体装置。 (3)透光性絶縁板の一部に半導体受光素子の電(4)
透光性絶縁板の固定な透光性絶縁板と半導体受光素子の
両者ζ二共通な大きさの治具を使って固着したことを特
徴とする特許請求の範囲第1項記載の光結合半導体装置
。[Scope of Claims] (1) A semiconductor light-receiving element having a photosensitive area on a part of its surface, and an upper part of the semiconductor light-receiving element 4: A laminated light-transmitting insulating substrate, and a top of the light-transmitting insulating substrate. and a semiconductor light-emitting confectionery disposed opposite to the semiconductor light-receiving element, an electrode of the light-emitting element is formed on the light-transmitting insulating plate, and a first electrode is formed of a semiconductor light-emitting element. Metal wires are connected to second electrodes arranged so as to surround the light emitting element and electrically connected at the central part ζ2 thereof, and the electrodes at the bottom of the semiconductor light emitting element are arranged so as to surround them. transparent ml to the inside of the first electrode.
1. An optically coupled semiconductor device, characterized in that a resin is formed to cover a semiconductor light emitting element, and further, a second resin covers the second electrode. -+21 The optically coupled semiconductor device according to claim 1, wherein the first electrode is shared with one electrode of a plurality of semiconductor light-emitting confections. (3) The semiconductor photodetector element (4) is attached to a part of the translucent insulating plate.
The optically coupled semiconductor according to claim 1, wherein both the fixed light-transmitting insulating plate and the semiconductor light-receiving element are fixed using a jig having a common size. Device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58233588A JPS60126874A (en) | 1983-12-13 | 1983-12-13 | Optical coupling semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58233588A JPS60126874A (en) | 1983-12-13 | 1983-12-13 | Optical coupling semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60126874A true JPS60126874A (en) | 1985-07-06 |
Family
ID=16957421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58233588A Pending JPS60126874A (en) | 1983-12-13 | 1983-12-13 | Optical coupling semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60126874A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01241184A (en) * | 1988-03-23 | 1989-09-26 | Iwasaki Electric Co Ltd | Reflection type photosensor |
EP0827214A1 (en) * | 1996-08-06 | 1998-03-04 | STM Sensor Technologie München GmbH | Procedure and apparatus used to manufacture lenses of micro-optical systems and light transmitter/receiver systems |
US6880981B2 (en) * | 2001-05-31 | 2005-04-19 | Sharp Kabushiki Kaisha | Optical coupling apparatus and method for manufacturing the same |
WO2006103512A1 (en) * | 2005-03-29 | 2006-10-05 | Melexis Nv | Optical data tranceiver |
-
1983
- 1983-12-13 JP JP58233588A patent/JPS60126874A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01241184A (en) * | 1988-03-23 | 1989-09-26 | Iwasaki Electric Co Ltd | Reflection type photosensor |
EP0827214A1 (en) * | 1996-08-06 | 1998-03-04 | STM Sensor Technologie München GmbH | Procedure and apparatus used to manufacture lenses of micro-optical systems and light transmitter/receiver systems |
US5945041A (en) * | 1996-08-06 | 1999-08-31 | Stm Sensor Technologie Munchen Gmbh | Method and device for producing lenses of microoptical systems and optical emitter/receiver system |
US6880981B2 (en) * | 2001-05-31 | 2005-04-19 | Sharp Kabushiki Kaisha | Optical coupling apparatus and method for manufacturing the same |
WO2006103512A1 (en) * | 2005-03-29 | 2006-10-05 | Melexis Nv | Optical data tranceiver |
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