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JPS60121805A - Single ended push-pull amplifier circuit - Google Patents

Single ended push-pull amplifier circuit

Info

Publication number
JPS60121805A
JPS60121805A JP22905483A JP22905483A JPS60121805A JP S60121805 A JPS60121805 A JP S60121805A JP 22905483 A JP22905483 A JP 22905483A JP 22905483 A JP22905483 A JP 22905483A JP S60121805 A JPS60121805 A JP S60121805A
Authority
JP
Japan
Prior art keywords
amplifier circuit
collector
resistance
trq1
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22905483A
Other languages
Japanese (ja)
Other versions
JPH0434844B2 (en
Inventor
Isao Nakazawa
中沢 勇夫
Hideki Kiyono
清野 秀木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22905483A priority Critical patent/JPS60121805A/en
Publication of JPS60121805A publication Critical patent/JPS60121805A/en
Publication of JPH0434844B2 publication Critical patent/JPH0434844B2/ja
Granted legal-status Critical Current

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Abstract

PURPOSE:To prevent frequency characteristics to a low frequency input signal from deteriorating as to a single ended push-pull amplifier circuit by using a resistor only for both the formation of an in-phase current corresponding to an input signal and the setting of a DC bias voltage. CONSTITUTION:The single ended push-pull SEPP amplifier circuit has a resistance R1 connected between the collector of a transistor TRQ1 and a +V power source and a resistance R5 between the collector and base of the TRQ1 to constitute a parallel feedback amplifier circuit A1, and a resistance R2 is connected between the emitter of a TRQ2 and a -V power source to constitute a common emitter type amplifying circuit A2. An input terminal I2 is connected to the base of the TRQ2, and an output terminal O2 is connected to the collector of the TRQ1; and a resistance R6 is connected between outputs of circuits A1 and A2, and a resistance R7 is connected between the base of the TRQ1 and the collector of the TRQ2. The resistances R1, and R6-R7 are selected to put the emitter current i1 of the TRQ1 and the collector current i2 of the TRQ2 in phase and equalize their levels, and also to satisfy the bias condition of the SEPP amplifier circuit, thereby obtaining the amplifier circuit with excellent frequency characteristics.

Description

【発明の詳細な説明】 発明の技術分野 本発明はトランスレス増幅回路に係9、特にビデオ信号
伝送に適した広帯域のシングルエンブト。
DETAILED DESCRIPTION OF THE INVENTION TECHNICAL FIELD OF THE INVENTION The present invention relates to a transformerless amplifier circuit, particularly a wideband single amplifier circuit suitable for video signal transmission.

プッシュプル(SEPP)増幅回路に関する。This invention relates to a push-pull (SEPP) amplifier circuit.

技術の背景 ビデオ信号伝送等に用いられるSEPP増幅回路として
は、IC化に適した小型のもので1、かつ広帯域にわた
り周波数特性の良好なものが要求されている。
Background of the Technology SEPP amplifier circuits used for video signal transmission and the like are required to be small enough to be integrated into an IC, and to have good frequency characteristics over a wide band.

従来技術と問題点 従来のSEPP増幅回路の1例を第1図に示す。Conventional technology and problems An example of a conventional SEPP amplifier circuit is shown in FIG.

第1図において、従来のSEPP増幅回路は、エミッタ
接地トランジスタQ1とエミッタ接地トランジスタQ2
を備えており、入力端子■1からトランジスタQ1のペ
ースに印加された入力信号に応じてトランジスタQ1の
コレクタから出力端子01に電流11が流れ、トランジ
スタQ2のコレクタから出力端子01に11が流れ、こ
の場合電流11と電流12とは同相となるように、トラ
ンジスタQ、のコレクタとトランジスタQ2のベースと
の間がコンデンサCによシ容量結合されている。こうし
て、出力端子01にはi、+12=2i□ の電流が入
力信号に応じて得られる。抵抗R,、R2はi、、i2
の値が等しくなるように選ばれている。一方、トランジ
スタQ2の直流バイアス電圧は抵抗R3,R4によって
入力信号系とは 。
In FIG. 1, the conventional SEPP amplifier circuit includes a common emitter transistor Q1 and a common emitter transistor Q2.
A current 11 flows from the collector of the transistor Q1 to the output terminal 01 according to an input signal applied from the input terminal 1 to the pace of the transistor Q1, and a current 11 flows from the collector of the transistor Q2 to the output terminal 01. In this case, the collector of the transistor Q and the base of the transistor Q2 are capacitively coupled by a capacitor C so that the currents 11 and 12 are in phase. In this way, a current of i,+12=2i□ is obtained at the output terminal 01 according to the input signal. The resistance R,, R2 is i,, i2
are chosen so that the values of are equal. On the other hand, the DC bias voltage of transistor Q2 is connected to the input signal system by resistors R3 and R4.

独立に設定されている。set independently.

上記従来回路においては、コンデンサCのflitリア
クタンスはビデオ信号前の低周波領域で太きぐなるので
、トランジスタQ2のベース電流が減少し、その結果、
トランジスタQ2のコレクタ電流12が減少するので、
電(Af、iHと1゜の間にアンバランスが生じ出力端
子01に得られる出力信号が歪み、また低域周波数特性
が劣化するという問題がある。
In the above conventional circuit, the flit reactance of the capacitor C increases in the low frequency region before the video signal, so the base current of the transistor Q2 decreases, and as a result,
Since the collector current 12 of transistor Q2 decreases,
There is a problem that an imbalance occurs between the electric current (Af, iH and 1°), the output signal obtained at the output terminal 01 is distorted, and the low frequency characteristics are deteriorated.

コンデーンサCの客間を大きくすれば」1記の問題は解
消するが各類の大きなコンデンサは寸法が大きくなる欠
点を有する。
If the size of the capacitor C is increased, the problem described in 1 above can be solved, but each type of large capacitor has the disadvantage of being large in size.

発明の目的 本発明の目的は上述の従来技術における問題に鑑み、入
力信号に応じた逆相電流の形成と直流バイアス′電圧の
設定を共に抵抗器のみで実現するとに適した小型の5E
PP増幅回路を提供することにある。
OBJECTS OF THE INVENTION In view of the above-mentioned problems in the prior art, an object of the present invention is to provide a small 5E suitable for forming a negative sequence current according to an input signal and setting a DC bias voltage using only a resistor.
An object of the present invention is to provide a PP amplification circuit.

発明の構成 上記の目的は、増幅回路の出力と並列並列帰還増幅回路
の出力とを抵抗を介して接続し、増幅回路の出力電流の
位相と同相で且つ大きさの等しい電流を並列並列帰還増
幅回路の出力に発生せしめるようにした5EPP増幅回
路により達成される。
Structure of the Invention The above object is to connect the output of an amplifier circuit and the output of a parallel parallel feedback amplifier circuit through a resistor, and to generate a current that is in phase and of the same magnitude as the output current of the amplifier circuit in parallel parallel feedback amplification. This is achieved by a 5EPP amplification circuit which is generated at the output of the circuit.

発明の実施例 以下本発明の実施例を第2図および第3図によって目兄
明する。
Embodiments of the Invention Examples of the present invention will be explained below with reference to FIGS. 2 and 3.

第2図は本発明の一実施例による5EPP増幅回路を示
す回路図である。第2図において、トランジスタQ、1
. Q、のコレクタと正電源端子+■との間に接続され
た抵抗R1、およびQlのコレクターベース間に接続さ
れた抵抗R5で並列並列帰還増幅回路A1が構成されて
おυ、トランジスタロ2ト、Q2ノエミッタと負電源端
子間に接続された抵抗R2とでエミッタ接地形増幅回路
A2が構成されている。並列並列帰還増幅回路・A□の
出力、すなわちトランジスタQ1のエミッタと、エミッ
タ接地形増幅回路A2の出力、すなわちトランジスタQ
2のコレクタとの間に抵抗R6が接続されており、トラ
ンジスタQ、のベースとトランジスタQ2のコレクタの
間に抵抗R7が接続されている。入力信号はトランジス
タQ2のベースに接続された入力端子■2に印加され、
出力はトランジスタQ1のエミッタに接続された出力端
子02に得られる。
FIG. 2 is a circuit diagram showing a 5EPP amplifier circuit according to an embodiment of the present invention. In FIG. 2, transistor Q, 1
.. A parallel parallel feedback amplifier circuit A1 is constituted by a resistor R1 connected between the collector of Q and the positive power supply terminal +■, and a resistor R5 connected between the collector base of Ql. , Q2 and a resistor R2 connected between the emitter and the negative power supply terminal constitute a grounded emitter amplifier circuit A2. The output of parallel parallel feedback amplifier circuit A□, that is, the emitter of transistor Q1, and the output of emitter grounded amplifier circuit A2, that is, transistor Q
A resistor R6 is connected between the collector of the transistor Q2, and a resistor R7 is connected between the base of the transistor Q and the collector of the transistor Q2. The input signal is applied to the input terminal ■2 connected to the base of the transistor Q2,
The output is available at output terminal 02 connected to the emitter of transistor Q1.

無信号時のトランジスタQ、 、 Q2のコレクタ電(
&を■。とすると入力端子I2に印加された入力信号に
応じてトランジスタQ、のコレクターエミッタ間には電
流■c+il + トランジスタQ2のコレクターエミ
ッタ間には電流工。−12が流れ、この場合、11と1
2とは同相で大きさが等しくなるように、寸だ、5EP
P増幅回路としてのバイアス条件を満足するように、各
抵抗の値は定められる。この抵抗値設定方法を以下に説
明する。
The collector voltage of transistors Q, , Q2 when there is no signal (
&■. Then, depending on the input signal applied to the input terminal I2, a current is generated between the collector and emitter of the transistor Q, and a current is generated between the collector and the emitter of the transistor Q2. -12 flows, in this case 11 and 1
2 is in phase and equal in size, 5EP
The value of each resistor is determined so as to satisfy the bias conditions as a P amplifier circuit. This resistance value setting method will be explained below.

第3図は第2図の回路の等価回路図である。第3図にお
いて、i2t¥Jの入力端子■2およびエミッタ接地形
増幅回路A2は41号源Sで表わされている。
FIG. 3 is an equivalent circuit diagram of the circuit of FIG. 2. In FIG. 3, the input terminal 2 of i2t\J and the emitter grounded amplifier circuit A2 are represented by source No. 41 S.

まず、信号入力時の電流i、と12の同相かつ大きさが
等しいという条件から次の式が得られる。
First, the following equation can be obtained from the condition that the current i at the time of signal input and 12 are in phase and have the same magnitude.

抵抗R6に電流12が流れると、抵抗R7を流れる電流
1(R7)は、トランジスタQ1のベース側のインピー
ダンスを無視すると 尻7 となる。この電流i(R,)によシ、トランジスタQ1
のコレクターエミッタ間に発生するエミッタを基準とす
る電圧Vは、 v=−i (R,) @ R。
When a current 12 flows through the resistor R6, the current 1 (R7) flowing through the resistor R7 becomes 7 if the impedance on the base side of the transistor Q1 is ignored. Due to this current i(R,), transistor Q1
The emitter-based voltage V generated between the collector and emitter of is v=-i (R,) @R.

均 である。また、トランジスタQ1のコレクタ電流11は i、 = −−i (R,) ・・・・・・(3)1 である。average It is. Also, the collector current 11 of the transistor Q1 is i, = −-i (R,) (3) 1 It is.

5EPP増幅回路となるだめの条件は 11=12 ・・・・・・(4) である。式(1)〜(4)よシ がイqられる。The conditions for becoming a 5EPP amplifier circuit are 11=12 (4) It is. Formulas (1) to (4) is ejaculated.

次にバイアス条件を再び第2図の回路図に基づいてめる
。入力信号が無信号時に抵抗Iチを流れる電流を工。、
抵抗R2を流れる電流をI(R,)、トランジスタQ1
のエミッタ電圧をV。、トランジスタQ1のベース・エ
ミッ〉閾電圧をVBl。、正亀源端子十Vの電圧をEと
すると、 V8=E−R,IC−R6I(R,) −VBE −・
−・(7)VBo=I(R,)R7−R6(Io−I(
R,)) −曲−(s)となる。式(8)よシ 式(9)を式(1)に代入して 従って、 1例として、E=9V、Vo=OV、Ic二40mA。
Next, bias conditions are determined again based on the circuit diagram in FIG. Calculate the current flowing through resistor I when there is no input signal. ,
The current flowing through the resistor R2 is I(R,), and the transistor Q1
The emitter voltage of V. , the base-emitter threshold voltage of transistor Q1 is VBl. , if the voltage at the positive source terminal 10V is E, then V8=ER, IC-R6I(R,) −VBE −・
-・(7)VBo=I(R,)R7-R6(Io-I(
R,)) -song-(s). Substituting equation (8) and equation (9) into equation (1), we get: As an example, E=9V, Vo=OV, Ic240mA.

R6=50Ω、 I (R,)=I。/10 、V、、
=0.7Vの場合式(9)より =625Ω ・・・・・・(12) 式(5)よシ = 13.51尤1 ・ど・・・・(13)式(7)お
よび(13)より = 88.30Ω ・・・・・・(14)よって R,
=1.192にΩ ・・・・・・(15)となる。
R6=50Ω, I (R,)=I. /10,V,,
= 0.7V From formula (9) = 625Ω ...... (12) According to formula (5) = 13.51 likelihood 1 Do... (13) Formula (7) and (13 ) = 88.30Ω ・・・・・・(14) Therefore, R,
= 1.192 and Ω (15).

第4図は第2図の実施例を帰還増幅器に通用した本発明
の実施例を示す回路図である。第4図において、出力0
□に得られる信号は抵抗R8を介して増幅請人の非反転
入力端子に帰還されておシ、反転入力端子には抵抗R0
を大して入力端子■3からの入力信号が与えられる。S
 E P l)と増幅器Aによる帰還増幅作用自体は周
知であり説明を省略する。
FIG. 4 is a circuit diagram showing an embodiment of the present invention in which the embodiment of FIG. 2 is applied to a feedback amplifier. In Figure 4, the output 0
The signal obtained at
is increased and an input signal from input terminal 3 is given. S
The feedback amplification effect by E P l) and the amplifier A is well known and will not be described here.

発明の詳細 な説明したように、本発明によれば、5EPP増幅回路
にお小で、入ブ月1号に応じた同相電流の形成とIIf
流バイアス電圧の設定を共に低抗器のみで実現したので
、結合用コンデンサが不要となり、従って低周波入力信
号に対しても周波数特性が劣化せず、しかもIC化に適
した構成が得られるという効果が得られる。
As described in detail, according to the present invention, the 5EPP amplifier circuit has a small in-phase current formation and IIf
Since the current bias voltage setting is achieved using only a low resistor, there is no need for a coupling capacitor, and therefore the frequency characteristics do not deteriorate even with low frequency input signals, and a configuration suitable for IC implementation can be obtained. Effects can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のS E L)P増幅回路の1例を示す回
路図、第2図は本発明の一実施例によるSJうPP増増
幅回路ケチ回路図、第3図は第2図の寺何回路図、第4
図は第2図の回路の応用例を示す本発明の他の実施例の
回路図である。 A1・・・並列並列帰還増幅回路 A2・・・増幅回路 R6・・・抵抗 特許出願人 富士通株式会社 特許出願代理人 弁理士 青 木 朗 弁理士 西舘和之 弁理士 内 1)幸 男 弁理士 山 口 昭 之 第1図 第2図 第3図 第4図
FIG. 1 is a circuit diagram showing an example of a conventional SEL)P amplifier circuit, FIG. 2 is a circuit diagram of an SJPP amplifier circuit according to an embodiment of the present invention, and FIG. Temple circuit diagram, 4th
This figure is a circuit diagram of another embodiment of the present invention showing an example of application of the circuit of FIG. 2. A1...Parallel parallel feedback amplifier circuit A2...Amplifier circuit R6...Resistance Patent applicant Fujitsu Limited Patent application agent Patent attorney Akira Aoki Patent attorney Kazuyuki Nishidate Patent attorney 1) Yukio Patent attorney Mt. Akira Kuchi Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】 1、増幅回路の出力と並列並列帰還増幅回路の出力を抵
抗を介して接続し、該増幅回路の出力電流の位相と同相
で且つ大きさの等しい電流を該並列並列帰還増幅回路の
出力に発生せしめるようにしたシングルエンデドプッシ
ュプル増幅回路。 2、該増幅回路はエミッタ接地形増幅回路である特許請
求の範囲第1項記載のシングルエンデドプッシュプル増
幅回路。 3、該シングルエンデドプッシュプル増幅回路の前段に
増幅回路を接続し、該シングルエンデドプッシュプル増
幅回路の出力から前記増幅回路に負帰還をかけた特許請
求の範囲第1項記載のシングルエンデドプッシュプル増
幅回路。
[Claims] 1. The output of the amplifier circuit and the output of the parallel parallel feedback amplifier circuit are connected through a resistor, and a current that is in phase and equal in magnitude to the output current of the amplifier circuit is connected to the parallel parallel feedback circuit. A single-ended push-pull amplifier circuit in which the output of the amplifier circuit is generated. 2. The single-ended push-pull amplifier circuit according to claim 1, wherein the amplifier circuit is a grounded emitter type amplifier circuit. 3. The single-ended push-pull amplifier according to claim 1, wherein an amplifier circuit is connected before the single-ended push-pull amplifier circuit, and negative feedback is applied to the amplifier circuit from the output of the single-ended push-pull amplifier circuit. Push-pull amplifier circuit.
JP22905483A 1983-12-06 1983-12-06 Single ended push-pull amplifier circuit Granted JPS60121805A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22905483A JPS60121805A (en) 1983-12-06 1983-12-06 Single ended push-pull amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22905483A JPS60121805A (en) 1983-12-06 1983-12-06 Single ended push-pull amplifier circuit

Publications (2)

Publication Number Publication Date
JPS60121805A true JPS60121805A (en) 1985-06-29
JPH0434844B2 JPH0434844B2 (en) 1992-06-09

Family

ID=16886020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22905483A Granted JPS60121805A (en) 1983-12-06 1983-12-06 Single ended push-pull amplifier circuit

Country Status (1)

Country Link
JP (1) JPS60121805A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072341A (en) * 1997-05-08 2000-06-06 Sony Corporation Driver circuit with pull down npn transistor and gain reduction
WO2020191606A1 (en) * 2019-03-26 2020-10-01 华为技术有限公司 Push-pull drive circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4876457A (en) * 1972-01-13 1973-10-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4876457A (en) * 1972-01-13 1973-10-15

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072341A (en) * 1997-05-08 2000-06-06 Sony Corporation Driver circuit with pull down npn transistor and gain reduction
WO2020191606A1 (en) * 2019-03-26 2020-10-01 华为技术有限公司 Push-pull drive circuit
CN113396536A (en) * 2019-03-26 2021-09-14 华为技术有限公司 Push-pull type driving circuit

Also Published As

Publication number Publication date
JPH0434844B2 (en) 1992-06-09

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