JPS60106357U - light emitting semiconductor device - Google Patents
light emitting semiconductor deviceInfo
- Publication number
- JPS60106357U JPS60106357U JP19798383U JP19798383U JPS60106357U JP S60106357 U JPS60106357 U JP S60106357U JP 19798383 U JP19798383 U JP 19798383U JP 19798383 U JP19798383 U JP 19798383U JP S60106357 U JPS60106357 U JP S60106357U
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- semiconductor device
- emitting semiconductor
- junction
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Thyristors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図ａ、 ｂはそれぞれ従来の発光半導体素子の構成
及び等価回路を示す図、第２図は本考案の発光半導体素
子の一実施例を示す図、第３図は第２図の等価回路を示
す図である。
１・・・ｎ形半導体、２・・・ｎ形半導体、３・・・ア
ノード、４・・・カソード、５・・・ゲート、６・・・
ｐｎ接合。Figures 1a and b are diagrams showing the configuration and equivalent circuit of a conventional light-emitting semiconductor device, respectively. Figure 2 is a diagram showing an embodiment of the light-emitting semiconductor element of the present invention. Figure 3 is the equivalent circuit of Figure 2. FIG. DESCRIPTION OF SYMBOLS 1...n-type semiconductor, 2...n-type semiconductor, 3...anode, 4...cathode, 5...gate, 6...
pn junction.
Claims (1)
部として、そのｎ形半導体にアノード電極を設け、第２
のｐｎ接合のｎ形半導体にカソード電極を設けるととも
にｎ形半導体にゲート電極を設け、前記ゲート電極にパ
ルス状電圧を加えて発光状態を持続するようにしたこと
を特徴とする発光半導体素子。It has a four-layer pnpn junction structure, with the first pn junction serving as the light emitting part, an anode electrode provided on the n-type semiconductor, and the second pn junction serving as the light emitting part.
A light emitting semiconductor device, characterized in that a cathode electrode is provided on an n-type semiconductor of a pn junction, a gate electrode is provided on the n-type semiconductor, and a pulsed voltage is applied to the gate electrode to maintain a light emitting state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19798383U JPS60106357U (en) | 1983-12-22 | 1983-12-22 | light emitting semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19798383U JPS60106357U (en) | 1983-12-22 | 1983-12-22 | light emitting semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60106357U true JPS60106357U (en) | 1985-07-19 |
Family
ID=31158250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19798383U Pending JPS60106357U (en) | 1983-12-22 | 1983-12-22 | light emitting semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60106357U (en) |
-
1983
- 1983-12-22 JP JP19798383U patent/JPS60106357U/en active Pending
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