JPS599041B2 - thin film mirror - Google Patents
thin film mirrorInfo
- Publication number
- JPS599041B2 JPS599041B2 JP11995976A JP11995976A JPS599041B2 JP S599041 B2 JPS599041 B2 JP S599041B2 JP 11995976 A JP11995976 A JP 11995976A JP 11995976 A JP11995976 A JP 11995976A JP S599041 B2 JPS599041 B2 JP S599041B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- optical waveguide
- film mirror
- optical
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 title claims description 17
- 230000003287 optical effect Effects 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 6
- 238000005452 bending Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Optical Integrated Circuits (AREA)
- Optical Elements Other Than Lenses (AREA)
Description
【発明の詳細な説明】 本発明は薄膜ミラーに関する。[Detailed description of the invention] The present invention relates to thin film mirrors.
光ＩＣの基本的な構成要素として重要なものは、平面的
な基板上で光を任意に導波する導波路である。An important basic component of an optical IC is a waveguide that guides light arbitrarily on a flat substrate.
このような導波路のうち、ＬｉＮｂ０３単結晶等表面か
ら金属を拡散させた金属拡散形光導波路は、伝搬損が小
さいことで知られている。Among such waveguides, a metal-diffused optical waveguide in which metal is diffused from the surface of a single crystal such as LiNb03 is known to have small propagation loss.
しかしながら、モノリシック化された光ＩＣは同一基板
上に種々の光学素子を組込み、これらを光学的に接続さ
せることから、各導波路内を伝搬する光量を所定値に設
定する必要が生じてくる。However, since a monolithic optical IC incorporates various optical elements on the same substrate and optically connects them, it becomes necessary to set the amount of light propagating in each waveguide to a predetermined value.
それ故、本発明の目的は、光ＩＣ基板面の導波路部に所
定の光量を伝搬させる薄膜ミラーを提供するものである
。このような目的を達成するために本発明はＬｉＮｂ０
３あるいはＬｉＴａＯ３等の強誘電体結晶にＴｉあるい
はＮｂ等の金属を拡散して形成される光導波路が光進行
方向に対して所定の角度で屈曲され、この屈曲された部
分に金属濃度の異なる分岐路が設けられたもので、以下
実施例に基づいて本発明を説明する。Therefore, an object of the present invention is to provide a thin film mirror that propagates a predetermined amount of light to a waveguide section on the surface of an optical IC substrate. In order to achieve this purpose, the present invention provides LiNb0
An optical waveguide formed by diffusing a metal such as Ti or Nb into a ferroelectric crystal such as 3 or LiTaO3 is bent at a predetermined angle with respect to the direction of light propagation, and branches with different metal concentrations are formed in the bent portion. The present invention will be described below based on examples.
第１図は本発明に係る薄膜ミラーの要部斜視構成図であ
る。FIG. 1 is a perspective view of a main part of a thin film mirror according to the present invention.
同図においてＬｉＮｂ０３あるいはＬｉＴａ０３等の強
誘電体結晶１の上面にＴｉあるいはＮｂ等の金属を選択
拡散することによつて形成される光導波路２が設けられ
、この光導波路２は、光が入射される方向に対して角度
αの屈曲部を有する光導波路３と、前記屈曲部に接続し
て設けられかつ前記光導波路３と異なる金属濃度を有す
る光導波路４とから構成されている。このように構成す
ることによつて屈折率がそれぞれ異なる光導波路３およ
び４の境界部に薄膜ミラー５が形成される。In the figure, an optical waveguide 2 formed by selectively diffusing a metal such as Ti or Nb is provided on the upper surface of a ferroelectric crystal 1 such as LiNb03 or LiTa03, and this optical waveguide 2 is provided with an optical waveguide 2 that is formed by selectively diffusing a metal such as Ti or Nb. The optical waveguide 3 includes an optical waveguide 3 having a bent portion at an angle α with respect to the direction of the optical waveguide 3, and an optical waveguide 4 connected to the bent portion and having a metal concentration different from that of the optical waveguide 3. With this configuration, the thin film mirror 5 is formed at the boundary between the optical waveguides 3 and 4 having different refractive indexes.
すなわち、光導波路３から入射される光は、その一部が
前記薄膜ミラー５で反射されそのまま光導波路３内を通
過し、また、他の一部は前記薄膜ミラー５を透過して光
導波路４内を通過する。したがつて、各光導波路３およ
び４の金属不純物濃度と、光導波路３の屈曲角αを任意
に設定することにより、また、このような薄膜ミラーを
所定の光導波路に複数個設けることによつて、各導波路
部に所定の光量を伝搬させることができる。例えば、Ｌ
ｉＮｂ０３の強誘電体結晶面にＴｉを蒸着して光導波路
３および４形成領域にそれぞれ膜厚４７０Ａ、１７０λ
のＴｉ膜を形成し、温度約９７０℃の熱処理を約７時間
行なつて拡散をした後に形成される光導波路３および４
に対して、光導波路３の屈曲角αの変化に伴い薄膜ミラ
ー５の反射率は第２図で示したグラフのようになる。That is, a part of the light incident from the optical waveguide 3 is reflected by the thin film mirror 5 and passes through the optical waveguide 3 as it is, and the other part is transmitted through the thin film mirror 5 and passes through the optical waveguide 4. pass through the inside. Therefore, by arbitrarily setting the metal impurity concentration of each optical waveguide 3 and 4 and the bending angle α of the optical waveguide 3, and by providing a plurality of such thin film mirrors in a given optical waveguide. Thus, a predetermined amount of light can be propagated through each waveguide section. For example, L
Ti was vapor-deposited on the ferroelectric crystal plane of iNb03 to form film thicknesses of 470A and 170λ in the optical waveguides 3 and 4 formation regions, respectively.
Optical waveguides 3 and 4 are formed after forming a Ti film and performing a heat treatment at a temperature of about 970° C. for about 7 hours to diffuse the Ti film.
On the other hand, as the bending angle α of the optical waveguide 3 changes, the reflectance of the thin film mirror 5 changes as shown in the graph shown in FIG.
ここで使用した光は波長０．８７μｍのダイオードレー
ザで、反射率とは反射光強度１Ｒ、透過光強度１Ｔとし
たときにＩＲ／ＩＲ＋ＩＴであられされる値である。本
実施例では、反射率を変化させるのに各光導波路３，４
の金属濃度あるいは光導波路３の屈曲角度αによつて決
定しているものであるが、電気光学効果、つまり薄膜ミ
ラー５部に電界を発生させることによつて変化させるこ
ともできる。The light used here is a diode laser with a wavelength of 0.87 μm, and the reflectance is the value calculated by IR/IR+IT when the reflected light intensity is 1R and the transmitted light intensity is 1T. In this embodiment, each optical waveguide 3, 4 is used to change the reflectance.
This is determined by the metal concentration of the optical waveguide 3 or the bending angle α of the optical waveguide 3, but it can also be changed by the electro-optic effect, that is, by generating an electric field in the thin film mirror 5.
すなわち、第３図に示すように薄膜ミラー５上に線状か
らなるＡｌ電極６，７を蒸着等により２個平行に設け、
このＡｌ電極６，Ｌ間に適当な電位差を加えるようにし
てもよい。以上、述べたように本発明に係る薄膜ミラー
によれば、光１Ｃの光導波路部の所望個所に形成でき、
これにより所定の光量を光導波路内に伝搬させることが
できる。That is, as shown in FIG. 3, two linear Al electrodes 6 and 7 are provided in parallel on the thin film mirror 5 by vapor deposition or the like.
An appropriate potential difference may be applied between the Al electrodes 6 and L. As described above, according to the thin film mirror according to the present invention, it can be formed at a desired location of the optical waveguide portion of the light 1C,
Thereby, a predetermined amount of light can be propagated into the optical waveguide.
第１図は本発明に係る薄膜ミラーの一実施例を示す要部
斜視構成図、第２図は本発明に係る薄膜ミラーの角度変
化に対する反射率を示すグラフ、第３図は本発明に係る
薄膜ミラーの他の実施例を示す要部斜視構成図である。
１・・・・・・強誘電体結晶、２，３，４・・・・・・
光導波路、５・・・・・・薄膜ミラー、６，７・・・・
・・Ａｌ電極。FIG. 1 is a perspective configuration diagram of essential parts showing an embodiment of the thin film mirror according to the present invention, FIG. 2 is a graph showing the reflectance of the thin film mirror according to the present invention with respect to angular changes, and FIG. FIG. 7 is a perspective configuration diagram of main parts showing another example of a thin film mirror. 1... Ferroelectric crystal, 2, 3, 4...
Optical waveguide, 5... Thin film mirror, 6, 7...
...Al electrode.
Claims (1)
体結晶にＴｉあるいはＮｂ等の金属を拡散して形成され
る光導波路が光進行方向に対して所定の角度で屈曲され
、この屈曲された部分に金属濃度の異なる分岐路が設け
られたことを特徴とする薄膜ミラー。1 An optical waveguide formed by diffusing a metal such as Ti or Nb into a ferroelectric crystal such as LiNbO_3 or LiTaO_3 is bent at a predetermined angle with respect to the direction of light propagation, and the bent portion has a different metal concentration. A thin film mirror characterized by being provided with a branch path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11995976A JPS599041B2 (en) | 1976-10-05 | 1976-10-05 | thin film mirror |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11995976A JPS599041B2 (en) | 1976-10-05 | 1976-10-05 | thin film mirror |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5345254A JPS5345254A (en) | 1978-04-22 |
| JPS599041B2 true JPS599041B2 (en) | 1984-02-29 |
Family
ID=14774429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11995976A Expired JPS599041B2 (en) | 1976-10-05 | 1976-10-05 | thin film mirror |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS599041B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59216107A (en) * | 1983-05-25 | 1984-12-06 | Fujitsu Ltd | Optical branch circuit |
| FI77131C (en) * | 1987-01-22 | 1989-01-10 | Outokumpu Oy | Device for providing bi-directional communication in underground spaces |
| JPH03209204A (en) * | 1990-01-12 | 1991-09-12 | Alps Electric Co Ltd | Optical waveguide type optical element and optical pickup using the same |
-
1976
- 1976-10-05 JP JP11995976A patent/JPS599041B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5345254A (en) | 1978-04-22 |
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