JPS5952490A - Magnetic bubble memory element - Google Patents
Magnetic bubble memory elementInfo
- Publication number
- JPS5952490A JPS5952490A JP57162142A JP16214282A JPS5952490A JP S5952490 A JPS5952490 A JP S5952490A JP 57162142 A JP57162142 A JP 57162142A JP 16214282 A JP16214282 A JP 16214282A JP S5952490 A JPS5952490 A JP S5952490A
- Authority
- JP
- Japan
- Prior art keywords
- bubble
- detector
- expander
- pattern
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Abstract
Description
【発明の詳細な説明】
(1)発明の技術分野
本発明は電子計算装置又はその端末機等の記憶装置とし
て用いられる磁気バブルメモリ素子に関するものである
。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a magnetic bubble memory element used as a storage device in an electronic computing device or a terminal thereof.
(2)技術の背景
一般に磁性薄膜は面内方向に磁区の磁化容易軸をもって
いるが、ある種の材料、例えばオルソフェライトや磁性
ガーネット等の単結晶はC軸方向にのみ磁化容易軸を有
する一軸異方性をもっている。このような材料の単結晶
薄膜に垂直な適当な強度のバイアス磁界を加えると、膜
面に垂直な小さな円筒磁区(これをパルプと云う)がで
きる。(2) Background of the technology Generally, magnetic thin films have an easy axis of magnetization of magnetic domains in the in-plane direction, but some materials, such as single crystals such as orthoferrite and magnetic garnet, have an easy axis of magnetization only in the C-axis direction. It has anisotropy. When a bias magnetic field of appropriate strength perpendicular to a single crystal thin film of such a material is applied, small cylindrical magnetic domains (called pulp) are formed perpendicular to the film surface.
このバブルは外部磁界を適当に変化させることにより移
動させるととができる。磁気バブルメモリは前記単結晶
のM膜上にパーマロイによる多数の薄膜微細ぶターンを
形成してパズルの伝播路となし、この伝搬路の微細パタ
ーンにおけるバブルの有無を情報の′1″、″′0”
に対応させてメモリとして使用するものである。This bubble can be moved by appropriately changing the external magnetic field. In the magnetic bubble memory, a large number of thin film fine turns made of permalloy are formed on the single-crystal M film to serve as a puzzle propagation path. 0"
It is used as memory in correspondence with
(3)従来技術と問題点
従来、このような磁気バブルメモリに関し、その磁気バ
ブルの検出に関しては、第1図に示す如くバブル伸襄器
1と検出器2とが設けられ、転送路iよシ送られるバブ
ル4は伸長器1で大きく引伸ばされ検出器2へ転送され
る方式がとられている。そのため伸長器1には同じパタ
ーンを数段重ねてさらに転送方向に数〜数十ビットにわ
たってくり返し配列する設計がなされている。伸長器の
うち検出器直前の数ビット分のパターンは検出器近傍の
磁場分布に影響し、検出信号およびその効率に関与する
。しかしながら従来の伸長器はバブルを伸長させること
に重点をおいだ設計となっており検出器への磁場による
影響についてはそれを抑制する方向で検討されておりそ
の効果を積極的に利用したものではなかった。(3) Prior Art and Problems Conventionally, regarding the detection of magnetic bubbles in such a magnetic bubble memory, a bubble stretcher 1 and a detector 2 are provided as shown in FIG. The transmitted bubble 4 is greatly expanded by an expander 1 and then transferred to a detector 2. Therefore, the decompressor 1 is designed to repeatedly arrange the same pattern in several stages over several to several tens of bits in the transfer direction. The pattern of several bits of the expander immediately before the detector affects the magnetic field distribution near the detector, and is involved in the detection signal and its efficiency. However, conventional extenders are designed with emphasis on extending the bubble, and studies have been conducted to suppress the influence of the magnetic field on the detector, and the effect has not been actively utilized. There wasn't.
(4)発明の目的
本発明は上記従来の問題点に鑑み、検111器近傍での
磁場分布を積極的に変化さゼ、バブルの検出信号を増大
させたバブル伸長器を崩する磁気バブルメモリ素子を提
供することを目的とするものである。(4) Purpose of the Invention In view of the above conventional problems, the present invention provides a magnetic bubble memory that actively changes the magnetic field distribution near the detector 111 and destroys the bubble expander that increases the bubble detection signal. The purpose is to provide an element.
(5)発明の構成
そしてこの目的は本発明によれば、磁気バブル用結晶膜
の上に、磁気バブル発生器、バブル伝播路、バブル伸長
器及び該バブル伸長器により伸長されたバブルを検出す
るバブル検出器等を具備しだ磁気バブルメモリ素子にお
いて、前記バブル伸長器は、バブルの進行方向にくり返
し複数段形成されたパターンのうち、検出器直前の少な
くとも1段は他のパターンよりも形状の犬lよるパター
ンを用いたことを將徴とする磁気バブルメモリ素子を提
供することによって達成される。(5) Structure and object of the invention According to the present invention, a magnetic bubble generator, a bubble propagation path, a bubble stretcher, and a bubble stretched by the bubble stretcher are detected on a crystal film for magnetic bubbles. In a magnetic bubble memory device equipped with a bubble detector or the like, the bubble expander is arranged such that at least one stage immediately before the detector has a shape that is smaller than that of the other patterns among the patterns repeatedly formed in multiple stages in the bubble traveling direction. This is achieved by providing a magnetic bubble memory element characterized by the use of a unique pattern.
(6)発明の実施例 以下本発明実施例を図面い−より言イ述する。(6) Examples of the invention Embodiments of the present invention will be described below with reference to the drawings.
第2図は本発明による磁気バブルメモリ素子の伸長器及
び検出器部分を示す図である。同図において、5はバブ
ル検出器、6はバブル伸長器、7はバブル伝播路、8
illバブルをそれぞれ示している。FIG. 2 is a diagram showing the expander and detector portions of the magnetic bubble memory device according to the present invention. In the figure, 5 is a bubble detector, 6 is a bubble expander, 7 is a bubble propagation path, and 8 is a bubble detector.
Each ill bubble is shown.
本実施例におけるバブル伸長器は図に示す如くバブル検
出器5のヒ1.前の1ビツト9は該バブル伸長器の他の
部分のパターンが単純な山形のパターンであるのに対し
、変形山形パターンを2つ重ね且つピッチも大きい形状
のパターン10を用いている。The bubble expander in this embodiment is a bubble detector 5 as shown in the figure. The previous 1-bit 9 uses a pattern 10 in which two modified chevron patterns are overlapped and the pitch is large, whereas the pattern in other parts of the bubble expander is a simple chevron pattern.
このように形成された本実施例は、バブル検出器が磁気
抵抗効果を利用する場合に周囲の磁場に影響される現象
を積極的に利用するものであり、検出器直前の伸長器の
1〜数ビツトを検出器に対して最適化するようにしたも
のでバブルの検出信号は従来に比して増大される。なお
検出器に入る直前のバブルの状態は伸長器を通過して来
ているため、充分に伸長されており検出器直前の数ビッ
トのパターンにはあまり大きく影竹されることはない。This embodiment formed in this way actively utilizes the phenomenon that is influenced by the surrounding magnetic field when the bubble detector uses the magnetoresistive effect. By optimizing several bits for the detector, the bubble detection signal is increased compared to the conventional method. Note that the state of the bubble just before entering the detector has been sufficiently expanded since it has passed through the decompressor, and is not affected too much by the pattern of several bits just before the detector.
したがって本実施例はバブルの伸長を阻害することなく
検出信号を増大することができる。Therefore, in this embodiment, the detection signal can be increased without inhibiting bubble expansion.
第3図は本発明による磁気バブルメモリ素子のバブル検
出特性を従来例と比較して示した特性図である。FIG. 3 is a characteristic diagram showing the bubble detection characteristics of the magnetic bubble memory element according to the present invention in comparison with a conventional example.
同図において横軸には駆動磁界HD を、縦軸には検出
効率(V Vo)/Vo (但しV。d、バフルがない
時の出力釉、圧、■はバブルがいる時の出力箱5圧)を
と9、曲線Aにより検出器直前のパターンに図中に示す
15μmのパターン11を用いた本発明の場合を示し、
曲線Bにより図中に示す10.5μmのパターンJ2を
用いた従来例の場合を示した。なおこの場合、検出器直
前のパターン以外の伸長器パターンおよび検出器は、A
、Bともに同一のものを使用している。In the figure, the horizontal axis represents the driving magnetic field HD, and the vertical axis represents the detection efficiency (V Vo)/Vo (however, V.d, the output glaze and pressure when there is no baffle, and ■ the output box 5 when there is a bubble). 9. Curve A shows the case of the present invention in which the pattern 11 of 15 μm shown in the figure is used as the pattern immediately before the detector.
Curve B shows the case of the conventional example using the 10.5 μm pattern J2 shown in the figure. In this case, the extender pattern and the detector other than the pattern immediately before the detector are A.
, B use the same one.
図よυ本発明は従来例に比し例°わていることがわかる
。It can be seen from the figure that the present invention is superior to the conventional example.
(7)発明の効果
以上詳細に説明したように、本発明による磁気バブルメ
モリ素子は、そのバブル伸長器を改良することによりバ
ブルの検出信号を従来に比して増大させることを可能と
した効果大なるものである。(7) Effects of the Invention As explained in detail above, the magnetic bubble memory device according to the present invention has the effect that the bubble detection signal can be increased compared to the conventional one by improving the bubble expander. It is a big thing.
第1図は従来の磁気バブルメモリ素子のバブル検出器及
び伸長器を示しだ図、第2図は本発明による磁気バブル
メモリ素子のバブル伸長器を説明するだめの図、第3図
は本発明による磁気バブルメモリ不予のバブル検出効率
を従来のものと比較して示した特性図である。
図面において、5はバブル検出器、61−J、バブル伸
長器、7はバブル伝播路、8はバブルをそれぞれ示す。FIG. 1 is a diagram showing a conventional bubble detector and expander for a magnetic bubble memory device, FIG. 2 is a diagram for explaining a bubble expander for a magnetic bubble memory device according to the present invention, and FIG. 3 is a diagram for explaining the bubble expander for a magnetic bubble memory device according to the present invention. FIG. 3 is a characteristic diagram showing the unexpected bubble detection efficiency of the magnetic bubble memory according to the present invention in comparison with a conventional one. In the drawings, 5 is a bubble detector, 61-J is a bubble expander, 7 is a bubble propagation path, and 8 is a bubble.
Claims (1)
ブル伝播路、バブル伸長器及び該バブル伸長器によシ伸
長されたバブルを検出するバブル検出器等を具備した磁
気バブルメモリ素子において、前記バブル伸長器は、バ
ブルの進行方向にくり返し複数段形成されたパタ ンの
うち、検出器直前の少なくとも1段は他のパターンより
形状の大なるパターンを用いたことを特徴とする磁気バ
ブルメモリ素子。1. A magnetic bubble memory element equipped with a magnetic bubble generator, a bubble propagation path, a bubble expander, a bubble detector for detecting bubbles expanded by the bubble expander, etc. on a magnetic bubble crystal film, The bubble expander is a magnetic bubble memory characterized in that among patterns repeatedly formed in a plurality of stages in the bubble traveling direction, at least one stage immediately before the detector uses a pattern having a larger shape than the other patterns. element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57162142A JPS5952490A (en) | 1982-09-20 | 1982-09-20 | Magnetic bubble memory element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57162142A JPS5952490A (en) | 1982-09-20 | 1982-09-20 | Magnetic bubble memory element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5952490A true JPS5952490A (en) | 1984-03-27 |
Family
ID=15748828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57162142A Pending JPS5952490A (en) | 1982-09-20 | 1982-09-20 | Magnetic bubble memory element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5952490A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6163993A (en) * | 1984-09-05 | 1986-04-02 | Hitachi Ltd | magnetic bubble memory detector |
-
1982
- 1982-09-20 JP JP57162142A patent/JPS5952490A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6163993A (en) * | 1984-09-05 | 1986-04-02 | Hitachi Ltd | magnetic bubble memory detector |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3145372A (en) | Magnetostrictive thin film delay line | |
JP2000049029A (en) | Method of manufacturing layer structure including artificial antiferromagnetic system and magnetoresistive sensor system | |
JPS5952490A (en) | Magnetic bubble memory element | |
Sandfort et al. | Logic functions for magnetic bubble devices | |
Rosencwaig | The effect of a second magnetic layer on hard bubbles | |
CA1104252A (en) | Bubble lattice file structure | |
US3760387A (en) | Magnetic bubble domain system using multiple magnetic sheets | |
US5309388A (en) | Solid state magnetic memory device | |
US3432828A (en) | Sharp thin ferromagnetic film | |
US4281396A (en) | Magnetic strip domain memory system | |
US3151317A (en) | Magnetic stepping circuit | |
US3794988A (en) | Programmable electromagnetic logic | |
Billing et al. | Coincident Current Magnetic Film Memories Using Locked Hard‐Direction Films Having Microshape Anisotropy | |
US4112503A (en) | Stripe domain propagation using contiguous bicore disk file structure | |
US4094006A (en) | Gapless magnetic bubble propagation circuit | |
US3466635A (en) | Magnetic film storage device with nondestructive readout | |
SU875454A1 (en) | Method of recording information onto magnetic carrier with cylindrical magnetic domains | |
JPS6376181A (en) | magnetic bubble stretcher | |
Fujiwara | Domain walls in antiferromagnetically coupled multi-layered films | |
Zhang et al. | Magnetic reversal of double-layer patterned nanosquares | |
JPH01149285A (en) | magnetic thin film memory element | |
JPS5947379B2 (en) | Cylindrical domain storage element | |
JPS6048069B2 (en) | magnetic bubble element | |
JPS6240687A (en) | Magnetic bubble memory element | |
JPS6113314B2 (en) |