JPS5951601A - microwave integrated circuit - Google Patents
microwave integrated circuitInfo
- Publication number
- JPS5951601A JPS5951601A JP13757182A JP13757182A JPS5951601A JP S5951601 A JPS5951601 A JP S5951601A JP 13757182 A JP13757182 A JP 13757182A JP 13757182 A JP13757182 A JP 13757182A JP S5951601 A JPS5951601 A JP S5951601A
- Authority
- JP
- Japan
- Prior art keywords
- bias circuit
- circuit
- bias
- circulator
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000000694 effects Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 101100008047 Caenorhabditis elegans cut-3 gene Proteins 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001615 p wave Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Waveguide Connection Structure (AREA)
- Microwave Amplifiers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明は発振又は増ｌＪ用半導体素子と種々の回路全集
積したマイクロ波０積回路よシなる発振器又は増巾器に
係りバイアス回路の該半導体素子への影咎ヲなくするマ
イクロ波集積回路に関する。Detailed Description of the Invention (a) Technical Field of the Invention The present invention relates to an oscillator or amplifier such as a microwave zero-product circuit in which a semiconductor element for oscillation or amplification and various circuits are fully integrated. This invention relates to a microwave integrated circuit that eliminates the influence on semiconductor devices.
（ｂｌ 従来技術と問題点
第１図は従来例の発振器の平面図、第２図は従来例のｊ
口中器の平面図、第３図は第１図の直流カント部の外側
を終端し、ガンΦインパットダイオード２の代わシに同
軸線路を用いガン・インバットダイオード２の位置よシ
見たインピーダンスの特性図で、実線はバイアス回路５
が無い場合、点線はバイアス回路５がある場合金示す。(bl Conventional technology and problems Figure 1 is a plan view of a conventional oscillator, and Figure 2 is a diagram of a conventional oscillator.
A plan view of the mouth organ, Figure 3 shows the impedance as seen from the position of the gun-input diode 2, using a coaxial line in place of the gun Φ impact diode 2, terminating the outside of the DC cant part in Figure 1. In the characteristic diagram, the solid line is bias circuit 5
If there is no bias circuit 5, the dotted line indicates if there is a bias circuit 5.
図中１は共振器、２はガン・インバットダイオード、３
，１７．１８は直流カット用結合線路、４はインピーダ
ンス変成器、５．１１．１２はバイアス回路、６．１’
３．１４はサーキュレータ、７．１５゜１６はダミーロ
ード、８は電界効果トランジスタ。In the figure, 1 is a resonator, 2 is a gun inbat diode, and 3
, 17.18 is a coupled line for DC cut, 4 is an impedance transformer, 5.11.12 is a bias circuit, 6.1'
3.14 is a circulator, 7.15°16 is a dummy load, and 8 is a field effect transistor.
９は入力整合回路、１０は出力整合回路を示す。9 indicates an input matching circuit, and 10 indicates an output matching circuit.
マイクロ波からミリ波に及ぶ範囲でマイクロ波集積回路
を利用した発振器及び増巾器が作られており、一般的に
はマイクロ波帯ではバイポーラトランジスタ、電界効果
トランジスタ（以下ＦＥＴと称す）か使用纒れＸ ＠（
８〜１２．４ Ｇ Ｈｚ ）あたシからはガン・インバ
ットダイオードが使用されている。Oscillators and amplifiers using microwave integrated circuits are manufactured in the range from microwave to millimeter waves, and generally, in the microwave band, bipolar transistors, field effect transistors (hereinafter referred to as FETs), or ReX @(
8-12.4 GHz) Atashi uses Gun-in-bat diodes.
第１図の発振器はガン・インバットダイオード２を使用
したもので、先端開放線路を利用した共振器１ （一般
には２ｎ＋１／４波長線路、但しｎ＝０、１．２．３−
）でほぼ決足される周波数の波を高周波出力としてイン
ピーダンス変成器４．直流カット用結合想路３．ザーキ
ュレータ６全介して出力を取り出している。この場合ガ
ン・インバットダイオード２のバイアス回路５はガン・
インパットダイオード２０周辺、例えば第１図の場合は
共振器１の所に持っている。この為第３図に示すインビ
ータ特性の如くバイアス回路５の有無により特性が異な
る。特に点線のループ状の所ではバイアス電圧を変化し
た場合発振周波畝のジャンプが発生するのでこの影響を
考ガせねばならず、又バイアス回路５による影響ヲ極力
少なくするために帯域阻止Ｐ波器の次ｉｔ多くせねばな
らない欠点がある。第１図の場合はチ衷−り、コンデン
サ。The oscillator shown in Fig. 1 uses a Gunn-invat diode 2, and a resonator 1 using an open-ended line (generally a 2n+1/4 wavelength line, however, n=0, 1.2.3-
) is used as a high-frequency output by an impedance transformer 4. Connecting path for DC cut 3. Output is taken out through all of the circulators 6. In this case, the bias circuit 5 of the gun inbutt diode 2 is
The impact diode 20 is placed around the resonator 1, for example in the case of FIG. Therefore, the characteristics of the inbeater as shown in FIG. 3 differ depending on whether or not the bias circuit 5 is provided. In particular, in the loop shown by the dotted line, if the bias voltage is changed, a jump in the oscillation frequency ridge will occur, so this effect must be taken into consideration, and in order to minimize the influence of the bias circuit 5, a band-stopping P-wave filter is used. There is a drawback that you have to do more than that. In the case of Figure 1, it is a capacitor.
チ日−りと３段なっている。There are three tiers.
第２図はＦＥＴ１使用した増巾器の例で入力よシの信号
はサーキュレータ１３．直流カット用結合線路１７．入
力整合回路９全介しＦＥＴ８に人力し、増巾されて、出
力整合回路ｌＯ１直流カット用結合線路１８．サーキュ
レータ１４’ｔ−介して出力信号を取り出している。こ
の場合ＦＥＴ８のゲート端子及びドレイン端子に電源を
供給するバイアス回ｂｉｉ、１２はＦＥＴ８のノー辺に
設けている。従って入力及び出力輩付器９．１０を設計
する場合、バイアス回路１１．１２の影響を考慮する必
要がちない欠点がおる。第２図の場合チョーク、コンデ
ンサ、チＢ−りど３段になっている。Figure 2 is an example of an amplifier using FET1, and the input signal is passed through circulator 13. Coupled line for DC cut 17. The input matching circuit 9 is connected to the FET 8 through the entire input matching circuit 9, and is amplified, and the output matching circuit 1O1 is connected to the DC cut coupling line 18. The output signal is taken out through the circulator 14't. In this case, the bias circuit bii, 12 for supplying power to the gate terminal and drain terminal of the FET 8 is provided on the no side of the FET 8. Therefore, when designing the input and output booster 9.10, there is a drawback that it is not necessary to consider the influence of the bias circuit 11.12. In the case of Figure 2, there are three stages: choke, capacitor, and circuit board.
（ｃ） 発明の目的
本発明の目的は上記の欠点をなくシ、バイアス回路が半
導体素子への影響を及ぼさずかつバイアス回路の帯域阻
止ｐ波器の次数を小さく出来るマイクロ波集積回路の提
供におる。(c) Object of the Invention An object of the present invention is to eliminate the above-mentioned drawbacks, and to provide a microwave integrated circuit in which the bias circuit does not affect the semiconductor elements and the order of the band-stop p-wave filter of the bias circuit can be reduced. is.
（ｄｌ 発明の構成
本発明は上記の目的を達成するために、半導体素子にバ
イアスを加えるバイアス回路をサーキュレータの該半導
体素子からの入出力部と接続されない端子部に設けたこ
とを特徴とする。(dl) Structure of the Invention In order to achieve the above object, the present invention is characterized in that a bias circuit that applies a bias to a semiconductor element is provided at a terminal portion of the circulator that is not connected to an input/output portion from the semiconductor element.
（ｅｌ 発明の実施例 以下本発明の実施例につき図に従って説明する。(el Embodiments of the invention Embodiments of the present invention will be described below with reference to the drawings.
第４図は本発明の実施例の発Ｓ器の平面図、第５図は本
発明の実施例の増巾器の平面図である。FIG. 4 is a plan view of an oscillator according to an embodiment of the present invention, and FIG. 5 is a plan view of an amplifier according to an embodiment of the present invention.
図中第１図、第２図と同一機能のものは同一記号で示す
。１′は共振器、５’、５“、 ｌｌ’、 １１“、１
２’。Components having the same functions as those in FIGS. 1 and 2 are indicated by the same symbols. 1' is a resonator, 5', 5", ll', 11", 1
2'.
１２“はバイアス回路、 ６’、 １３’、 １４’
はサーキュレータを示す。12" is a bias circuit, 6', 13', 14'
indicates a circulator.
サーキュレータは外部回路とのアイル−ショノをとるた
めのものでちり、第４図の場合ではサーキーレータ６′
の出力側にバイアス回路５′搭設けても又はダミーロー
ド７ｆｌ！ｌにバイアス回路５′金設置プでもノノン・
インバットダイオード２への影響はない点に着目し、サ
ーキュレータ６′の出力側と直流力、ト用結合線路３と
の間にバイアス回路５″を設置プるか、サーキーレータ
６′のダミーロード７１１！１にバイアス回路５”を設
けＩＬばガン−インバットダイオード２への影響はなく
なるので、バイアス回路のことは考慮せずに発振器の設
計は出来るし、又バイアス回路の帯域阻止ｒ波器の段数
を減することがｂｊ来る０湧４図の場合はチョーク１段
となりている。The circulator is used to connect the external circuit, and in the case of Fig. 4, the circulator is 6'.
Even if a bias circuit 5' is installed on the output side of the dummy load 7fl! Even if the bias circuit 5' gold is installed on l.
Focusing on the fact that there is no effect on the invat diode 2, either install a bias circuit 5'' between the output side of the circulator 6' and the coupling line 3 for DC power or If a bias circuit 5" is provided in the bias circuit 5", the influence on the gun-imbat diode 2 will be eliminated, so the oscillator can be designed without considering the bias circuit. In the case of 4th figure, where the number of steps can be reduced, the choke is 1 step.
第５図の揚台は、発振器の場合と同一理由によ、９、Ｆ
Ｅ・Ｔ８のゲートのバイアス回路は入力１５号の直流カ
ット用結合線路１７とサーキュレータ１３′如く設け、
ＦＥＴ８のドレインのバイアス回路は出力信号側の直流
カン） 珀合稚路１８とサーキュレータ１４′の出力側
の間にバイアス回路１２″の如く設けるか、又はサーキ
ュレータ１４′のダミーロード１６側にバイアス回路１
２’の如く設ければＦＥＴ８への影響はなくなるし、又
帯域阻止ν波器の次数を減することが出来る。第５図の
場合はチョーク１段となっている。For the same reason as the oscillator, the platform in Figure 5 is 9, F
The bias circuit for the gate of E/T8 is provided like the DC cut coupling line 17 of input No. 15 and the circulator 13'.
The bias circuit for the drain of FET 8 is provided as a bias circuit 12'' between the output side of the output signal side (DC circuit on the output signal side), or the bias circuit is provided on the dummy load 16 side of the circulator 14'. 1
If it is provided like 2', there will be no influence on the FET 8, and the order of the band-elimination ν wave filter can be reduced. In the case of Fig. 5, there is one stage of choke.
（ｆ） 発り２〕の効果
以上詳細ｉＣＣ開明る如く本先明によれば、バイアス回
路は半纏体米子への影響がなくなるので発振器の設計又
は増巾器の場合は半導体素子の入出力の整合回路の設計
が楽にな９又バイアス回路の帯域阻止ｆ波器の次数を減
することが出来る効果がある。(f) Effects of Origin 2] In detail, according to the present invention, the bias circuit has no influence on the semi-integrated body Yonago, so in the case of the oscillator design or the amplifier, the input/output of the semiconductor element can be improved. This has the effect of making it easier to design the matching circuit and reducing the order of the band-stop f-wave filter in the nine-way bias circuit.
第１図は従来例の発振器の平面図、第２図は従来例の増
巾器の平面図、第３図は第１図のガン・インバットダイ
オードの位置より見た外部回路のインピーダンス特性図
、第４図は本発明の実施例の発振器の平面図、第５図は
本発明の実施例の増巾器の平面図である。
図中１．１′は共振器、２はガン・インバットダイオー
ド、３．１７．１８は直流カット用結合線路。
４はインピーダンス変成器、 ５．５’、 ５″、 １
１．１１’。
１１″、 １２．１２’、 １２″はバイアス回路、
６．６’、１３゜１３’、１４．１４’は・す°−キュ
レータ、７．１５．１６はダミーロード、８は電界効果
トランジスタ、９は人力整合上ｉ路、１０は出力整合回
路を示す。
矛／ｙ
Ｐｚ図
矛３図Fig. 1 is a plan view of a conventional oscillator, Fig. 2 is a plan view of a conventional amplifier, and Fig. 3 is an impedance characteristic diagram of the external circuit as seen from the position of the gun-imbat diode in Fig. 1. , FIG. 4 is a plan view of an oscillator according to an embodiment of the present invention, and FIG. 5 is a plan view of an amplifier according to an embodiment of the present invention. In the figure, 1.1' is a resonator, 2 is a gun-imbat diode, and 3.17.18 is a coupled line for DC cutting. 4 is an impedance transformer, 5.5', 5'', 1
1.11'. 11″, 12.12′, 12″ are bias circuits,
6.6', 13°13', 14.14' are the curators, 7.15.16 are the dummy loads, 8 is the field effect transistor, 9 is the i-way for manual matching, and 10 is the output matching circuit. show. spear/y Pz spear 3
Claims (1)
よりなる発振器又は増巾器において、該半導体素子にバ
イアスを加えるバイアス回路をサーキュレータの該半導
体素子の人出力部と接続されない端子部に設けたことを
％徴とするマイクロ波集積回路。In an oscillator or amplifier made of a microwave integrated circuit in which a semiconductor element and various circuits are fully integrated, a bias circuit for applying a bias to the semiconductor element is provided in a terminal part of the circulator that is not connected to the human output part of the semiconductor element. Microwave integrated circuit with % characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13757182A JPS5951601A (en) | 1982-08-07 | 1982-08-07 | microwave integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13757182A JPS5951601A (en) | 1982-08-07 | 1982-08-07 | microwave integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5951601A true JPS5951601A (en) | 1984-03-26 |
Family
ID=15201826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13757182A Pending JPS5951601A (en) | 1982-08-07 | 1982-08-07 | microwave integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5951601A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63501675A (en) * | 1985-10-03 | 1988-06-23 | ヒユ−ズ・エアクラフト・カンパニ− | Broadband high isolation radial line power splitter/combiner |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5619901B2 (en) * | 1976-06-23 | 1981-05-11 |
-
1982
- 1982-08-07 JP JP13757182A patent/JPS5951601A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5619901B2 (en) * | 1976-06-23 | 1981-05-11 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63501675A (en) * | 1985-10-03 | 1988-06-23 | ヒユ−ズ・エアクラフト・カンパニ− | Broadband high isolation radial line power splitter/combiner |
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