JPS5946830A - Semiconductor pressure sensor - Google Patents

Abstract

PURPOSE:To obtain a semiconductor pressure sensor having excellent characteristics of dielectric strength, by using an insulating material for a part of a supporting stand and regulating the creeping distance to a specific value. CONSTITUTION:Ceramic material such as ''Pyrex'' glass, alumina, beryllia or zircon having a similar coefficient of thermal expansion to a silicon single crystal substrate 1 is used for the material of the second supporting stand 4. Further, in order to give dielectric strength, a minimum dimension L of the creeping distance of the side face of the stand 4 is regulated to >=(V)X0.1mm.100(V) dielectric strength.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of a semiconductor pressure sensor having a withstand voltage.

In general, semiconductor single crystals such as silicon and germanium undergo distortion when pressure is applied, which is well known as the piezoelectric effect. ni{・11 +l.I
L Uruishi I? Structure 7'7: Half. It's becoming more and more common to see rivers in the streets. A semi-slope single crystal with Noriko I and germanium 7. Select a crystal plane with an f-effect, and on this crystal plane) 1. (The opposite rod E
{χ-type impurity is selected [i (I Vr. Diffused to form a C expansion selective resistive layer. This 41℃ resistor is formed on the surface, j: On the opposite side, this resistor type ■ part and λ−l [
ji1+, 8-fl≦min・il} i! River meat i1 such as +7 method and etching method! Jiil<,! It is formed so that a thick portion C remains around one L. This meat}λ
When a liquid or gas ({:te1{- force metal is applied to the strain groove 13 formed as a part to generate strain),
1) The resistance value of the diffusion layer changes due to the stress and tensile stress, and the pressure corresponding to the change becomes a positive transmission {1/! 11'J. can be extracted. This kind of lji'j burying'4i11i・kohani・buitai;
It has a remarkable quotient R ~ degree, light] I4, small μ, phosphoric acid "J' i+!Lf./, and also has characteristics such as no creep phenomenon, and is suitable as a recent pressure sensor. Semiconductor 11E sensors are becoming common.Furthermore,
By making full use of the recent highly advanced ICC brainer technique, we can produce products with uniform characteristics -p! These semiconductor pressure sensors have recently come into widespread use, as they have the great advantage of being able to be produced in large quantities and being produced at low cost.

There are various types of semi- and i1% body weight sensors, such as absolute pressure type, differential pressure type, and gauge pressure type, and the appropriate d1
Among these, the absolute pressure type is easy to use because the half-circular pressure sensor element itself has a structure with a top chamber and does not require correction due to changes in the amount of outside air. It has some great advantages.

May it be used well. Semiconductor pressure sensor dimensions lj)+N
Application fields include automatic heavy duty and medical equipment such as blood pressure monitors.

Recently, it has been expanding into industrial equipment and other areas.

FIG. 1 is a sectional view showing the most general structure of a conventional absolute turgor pressure sensor. (11 is a semiconductor pressure sensor chip, (2) is a semiconductor pressure sensor chip (1) with a thermal expansion coefficient; (11) is a silicon single crystal (11).
) is formed by enclosing the air, and the moon and room τ'0 are usually formed as the ultimate ultimate. 3) to the contacting member
After that, Au-based retrograde material and PB-based solder are used.
Melting point glass or the like is used. (4) is the thermal strain applied from the outer container on the second support stand by half j7%. Since the mocha sensor element's starting φ part VC contacts, it works to weaken it so that it does not get transmitted.
J: The coefficient of thermal expansion is the same as that of the moon, or similar to IlA (71A, 11 months).Also, as the size of the support base (2) Thermal strain from the exterior valley 4 is conveyed.
C is the pressure sensor element] 1) of the circumscribed circle of 1+:+:
(: direct or smaller than # of the circumscribed circle of support stand (2), -y
:' (1? h J: U1/K, also, the outer container is designed to be less likely to generate heat.

(7) and (91//i outside H8&4k JI'31ii
J-2y I) I/) -σ, +716-, l 4E
Stem (91 is a metal gap), the stem (7) and cap (91) are sealed using a method such as welding. Stem +71 it silicon, 111 crystal and thermal expansion. Kovar, iron-niracle (42%) alloy, iron, etc. are used as the main material for the coefficient JL.
σ: This is a human output lead terminal that is made of small urine, and the main part of the valley part ('2a) and the human output lead terminal (7b) are electrically insulated using sealing glass (7c). The second support stand (41 and 411) is sealed with an airtight seal and held in the machine 411. Brazing material with C (!'+13
5. Use the inner position (pre-prepared tl, / point 1 to connect +7 I.). There is Aυ thread brazing material between the metal plate part (Tsu a).
til 1 ha, 2nd v, 4 te (41 and) 10,000 boards? The metallization applied in advance to (7a) is then welded to a fixed depth of I8.

(8) If Au or At is connected to G411, the gland should be connected between the output metallized part and the outside + IS output lead terminal b). Electrical connection is made by wire bonding method. t
l21 kl alloy7. In the hole in the +4 cap (91 VC provided) part (9a), +li constant, 1 gas or I, toy (1l-) I - also < 1-f,
-J-,? , l kome , jr , IQ l bay 1. I
-Yes. Stem +71 and 2t Yatsuno i+11-7 type 1
19・π・1. /) The foreign language g'r device is
11-power', n°ri-moto-i'ij1?
l outside ill; 'a' )47. 1k old
, T 11 vs. -4-ru I4E if! J
1-11 (',,'l-,'-(,
'+l',i・,”,,'!,;I,
i, (,') '(i), 0) ru.

tl3n: figure t, t +゛r:+; -+ +nu1 no 1
1 sword) 71 no G'J1 Yu"), 'Mo'Usujj', B minute 2
I understand 4'< +il+! Bright, -
//l vc i” Knee 11 body 1 sword °・Nri □, child-Notsupu, 21 No. 1. Noshi (1 bow Np' ”Z CF
−1”i i, I<7;” Jl/a KU k I
Jb blood chart 12''r>d).

i″-”! J body 1 (〕force 1 (n'ri-(・:j・q゛-
/zo(]1・/,) ,7. :lI 4:”('Surprise G1
6 No. 21:, 'jl-C explained 1.7. reactor. I'll
I, , (,Ln)! /, t, ``lI41(target IC de pure (wide 11 months and 7 months II!
I'll do it. K! -1b) f, j: Hiroha'i 4K Anti-IM (i+) Tochitsubu υ') Blind 1', Zuden I'
u (]1・) '5・small<(:I;l K 1H71
Sui Eel ft me 1st generation] LL anti-e Konamo L u・'4,j
l(: 目III (wide ilt I-, -CIlg l+
i9,, = ft diffusion extraction layer. in silicon,
Crystal] I (Rebellion 111.N type silicon Jy "ii
J crystal' (ilJ ifr-Qi, H9, iik I
ff; anti-layer (la) and diffusion-drawing layer (lb) are selectively dispersed using a holon in the inner layer and the inner layer.

In a semiconductor pressure sensor that irritates such a structure, a second support base (4) and (7) are used. In this case, the manpower output month j outside t; 1 ≤ lead C・1M child (7b) and the external appearance where the main part consists of gold 1.・4); 1a) and all I! , +4 catfish (1 ("[There is a drawback that there is no fainting H property. (2), 91 because silicon small crystals are used as the FB 2.0 support base (4).
(From a sexual point of view, the resistance component of each part is 1.

V, , %, resistance) ~ (18) and 1 wide IK extraction layer (lb) is a P swelling diffusion layer, and since the shield plate (] 1 is in the shape of a T, semiconductor 1-E Kasensa Toko chip (11 It consists of 11 diodes. ?7A.

When viewed from the outside, a conventional single-channel structure exhibits a guiode characteristic, blocking only a few volts in the forward direction and several tens of volts in the reverse direction. Therefore, for example, gold;
But contact JI! ! In applications where the metal part of the main body to be measured is directly connected to the VC and is used, if a large surge occurs due to a fall or the like, there may be major drawbacks such as the force sensor element breaking. .

The present invention was made in view of the drawbacks of the conventional 1.
Essential pressure resistance (v) x 10 (IV, resistance, +r
u2 special M (1/) world, no 1ri,”, I4 <j body 1
1-Kasenzho/J quantity, do.

The structure of the present invention is 21)" and I + j! ”、'；、＋
Figure p (small σJ1. Rui ゛iko) Elbow J'i (/, 'l modo 41° II'I' l-1 same t:: , 1: i,
1. '2,! - Holding ratio > 4A material, J-sheet insulation 4; using A-1/, this characteristic) -il-ru.

Second support 4': As a material for one unit: 1. ``,'/Li I-A crystal no,-plate (11 and jkej-expansion coefficient h' is similar to lotus,
゛Enbai L/TS//Sugara 2s (Nishi product name of 2J-2゛///) and Rumijiri Berilia〆+, ,! , or Jirgo J etc. ゛'s ceramin' (A or J eyes) L effect 1)
. y,, -1 voltage also; 2 zero;
1 place IJ! + ノIBJt 市It(VI X -i5
+1(v) ” ”. For example, 1l of 150C]V
li 口"13', 11'i"4, 勺/U semiconductor 1+
+Kasey +)woL>150(J(VIX-1 stone 5
j' = 1. Rim+n,! : 4-, ]) From I1, it becomes the function of I.

As explained above, according to the present invention, an insulating material is used for a part of the support base, and the creepage distance 1111 is p)? The essential withstand voltage (v)×-] has been closed, so that the effect of being able to use the full IF capacitor with excellent ltI voltage characteristics can be obtained.

4. Simple explanation of I'llI'1 Figures 1 and 2
The figure explains the structure of the hemiculum ratio Kasen Su
It is.

'] l (14) 44 itζ is the body pressure sensor, (21) is the first (0 support stand, (41 is the second support stand, (7) is the step J, ~, (91 is the 4-Yanbu ζ″;
(Nru.

Agent Haku Kuzuno - Figure 1 Figure 2 Director General of the Japan Patent Office 1, Indication of the case: Patent Application No. 159152/1982 2, Title of the invention: Semiconductor pressure sensor 3, To the representative of the person making the amendment: Kata Yuhito 4, Agent 5, Detailed explanation of the invention column 6 of the specification subject to amendment, Contents of amendment (1) The specification is corrected as follows.

Claims (1)

[Claims] (1) A silicon diaphragm in which a pressure-sensitive member is embedded in a silicon single crystal substrate, a silicon !11 crystal substrate that supports and fixes the silicon diaphragm, and i
A support base having a similar coefficient of expansion and an outer container for fixing this support base are used, a part of the support base is made of an insulating material, and a part of the support base made of the insulating H material is 4
The creepage distance of the fill surface is the required surface 1 voltage (V) x IOO
A semiconductor pressure sensor characterized by having a pressure of V or more. (2) Insulating materials are alumina, helilya, and jirufun. The semiconductor pressure sensor according to claim 1, wherein the semiconductor pressure sensor is made of Pyrex glass (trade name of Corning Inc.).