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JPS5946432B2 - bimorph piezoelectric element - Google Patents

bimorph piezoelectric element

Info

Publication number
JPS5946432B2
JPS5946432B2 JP55046733A JP4673380A JPS5946432B2 JP S5946432 B2 JPS5946432 B2 JP S5946432B2 JP 55046733 A JP55046733 A JP 55046733A JP 4673380 A JP4673380 A JP 4673380A JP S5946432 B2 JPS5946432 B2 JP S5946432B2
Authority
JP
Japan
Prior art keywords
piezoelectric element
bimorph piezoelectric
bimorph
elements
piezoelectric ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55046733A
Other languages
Japanese (ja)
Other versions
JPS56144585A (en
Inventor
千秋 田沼
勝徳 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55046733A priority Critical patent/JPS5946432B2/en
Publication of JPS56144585A publication Critical patent/JPS56144585A/en
Publication of JPS5946432B2 publication Critical patent/JPS5946432B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/20Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041Beam type
    • H10N30/2042Cantilevers, i.e. having one fixed end

Landscapes

  • Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)

Description

【発明の詳細な説明】 本発明はバイモルフ圧電素子に関する。[Detailed description of the invention] The present invention relates to bimorph piezoelectric elements.

一般にバイモルフ圧電素子は一対の圧電セラミック素子
を積層結合しそれらの素子に偏向電圧を加えて長手方向
にそれらの素子を曲げるものである事が知られている。
It is generally known that a bimorph piezoelectric element is a device in which a pair of piezoelectric ceramic elements are laminated together and a deflection voltage is applied to the elements to bend the elements in the longitudinal direction.

このバイモルフ圧電素子を構成する個々の圧電セラミッ
ク素子は高誘電率の多結晶材料からなり、この材料は印
加電圧の極性により分極され圧電特性を示す。分極した
材料は゛分極方向’’を有していると言われ、それに電
圧が与えられると特異な機械的特性を示す。たとえは薄
くて長い圧電セラミック素子を基板(たとえば金属板)
に積層結合し、圧電セラミック素子に分極方向と同一方
向の電圧を印加すると薄くて長い圧電セラミック素子は
長手方向に対して縮むことになる。し力化この時基板は
何ら変化しないので結局積層結合された圧電セラミック
素子は基板と共に曲がりを生ずることになる。この曲が
り効果を増大する公知の方法は2枚の圧電セラミック素
子を積層結合し、かつ各圧電セラミック素子へ電圧を与
えこの電圧が一つの素子の分極方向となり他の素子の分
極方向と逆になるようにすることである。積層結合され
た一対の素子は単一の素子よりも大きく曲げさせるプッ
シュプル効果が達成される。さらに印加電圧を反転する
ことにより素子の曲がりを反転させることができる。大
きな両方向の偏向を必要とするバイモルフ圧電素子の応
用として例えばビデオテープレコーダ(VTR)等が挙
げられる。
Each piezoelectric ceramic element constituting this bimorph piezoelectric element is made of a polycrystalline material with a high dielectric constant, and this material exhibits piezoelectric properties when polarized by the polarity of an applied voltage. A polarized material is said to have a ``direction of polarization,'' and exhibits unique mechanical properties when a voltage is applied to it. For example, a thin and long piezoelectric ceramic element is connected to a substrate (for example, a metal plate).
When a voltage is applied to the piezoelectric ceramic element in the same direction as the polarization direction, the thin and long piezoelectric ceramic element will shrink in the longitudinal direction. At this time, the substrate does not change at all, so the stacked piezoelectric ceramic elements end up bending together with the substrate. A known method for increasing this bending effect is to stack and bond two piezoelectric ceramic elements and apply a voltage to each piezoelectric ceramic element, which causes the polarization direction of one element to be opposite to the polarization direction of the other element. It is to do so. A push-pull effect is achieved in which a pair of laminated elements bends more than a single element. Furthermore, by reversing the applied voltage, the bending of the element can be reversed. Applications of bimorph piezoelectric elements that require large deflections in both directions include, for example, video tape recorders (VTRs).

つまりVTRにおいてビデオテープ上の情報はテープの
トラックに含まれそのトラックに含まれた情報の最も良
好な再生に対してはビデオヘッドは読み出されているト
ラック上で中心に位置決めされなければならない。この
VTRのトラックに関してビデオヘッドの位置を感知し
かつビデオヘッドをトラックと整合させるための電子的
手法は公知である。このような手法を用いたVTRにお
いてビデオヘッドはバイモルフ圧電素子の一端に装置さ
れている。偏向電圧はビデオヘッドを読み出されている
トラックに関して適切に位置決めをするようにバイモル
フ圧電素子が設けられる。ビデオヘッドがトラック上の
中心に位置決めされるためには、偏向電圧は時間ととも
に変化する電圧が与えられる。偏向電圧としては広帯域
にわたる周波数の交流信号である正弦波、三角波、矩形
波、鋸歯状波などが用いられバイモルフ圧電素子はこの
ような偏向電圧に応答すると同時に偏向電圧とは異なる
偏向を生じ不要振動を発生する。
That is, in a VTR, the information on the videotape is contained in tracks of the tape, and for best reproduction of the information contained in that track, the video head must be centered over the track being read. Electronic techniques for sensing the position of the video head with respect to the tracks of this VTR and aligning the video head with the tracks are known. In a VTR using such a technique, a video head is installed at one end of a bimorph piezoelectric element. A bimorph piezoelectric element is provided so that the deflection voltage properly positions the video head with respect to the track being read. In order to center the video head on the track, a deflection voltage that changes over time is applied. As the deflection voltage, AC signals with a wide range of frequencies such as sine waves, triangular waves, square waves, sawtooth waves, etc. are used, and the bimorph piezoelectric element responds to such deflection voltages and at the same time produces a deflection different from the deflection voltage, resulting in unnecessary vibrations. occurs.

たとえば長さが17mm)幅が8uで厚みがO、3nの
圧電セラミック素子を2枚はり合せたバイモルフ圧電素
子ではこの不要振動の周波数は約1KHzでありこのよ
うな不要振動は可能な限り除去又は減衰させる事が好ま
しい。前述のバイモルフ圧電素子の不要振動の除去ある
いは減衰の手法としでバイモルフ圧電素子をデツド・ラ
バ一・バツドで挟持する事により不要振動を制限する事
が試みられている。しかし、このようにデツド・ラバ一
・バツドで挾持した場合はバイモルフ圧電素子が偏向で
きる範囲を限定し、バイモルフ圧電素子による動的偏向
範囲を制限するという欠点を有していた。つまり偏向電
圧に対応したバイモルフ圧電素子自身の振動を除去、減
衰させ、偏向の範囲を限定する事により忠実な応答を困
難なものとしていた。本発明は上記した点に鑑みてなさ
れたものであり、バイモルフ圧電素子の偏向できる範囲
を限定することなく、かつ不要振動を除去もしくは減衰
することができるバイモルフ圧電素子を提供することを
目的とする。
For example, in a bimorph piezoelectric element made by gluing together two piezoelectric ceramic elements with a width of 8u and a thickness of 0.3n (length: 17 mm), the frequency of this unnecessary vibration is approximately 1 KHz, and such unnecessary vibration should be removed or removed as much as possible. It is preferable to attenuate it. As a method for removing or damping the unnecessary vibrations of the bimorph piezoelectric element mentioned above, an attempt has been made to limit the unnecessary vibrations by holding the bimorph piezoelectric element between dead rubbers and butts. However, such clamping with dead rubber butts has the drawback of limiting the range in which the bimorph piezoelectric element can be deflected, thereby limiting the dynamic deflection range of the bimorph piezoelectric element. In other words, the vibration of the bimorph piezoelectric element itself corresponding to the deflection voltage is removed and attenuated, and the range of deflection is limited, making it difficult to provide a faithful response. The present invention has been made in view of the above points, and an object of the present invention is to provide a bimorph piezoelectric element that can eliminate or attenuate unnecessary vibrations without limiting the deflectable range of the bimorph piezoelectric element. .

また本発明はバイモルフ圧電素子の駆動回路に特殊な回
路を必要とせず安価で応答性の良いバイモルフ圧電素子
を提供することにある。第1図は本発明によるバイモル
フ圧電素子の構造を示す概略図である。
Another object of the present invention is to provide a bimorph piezoelectric element that is inexpensive and has good responsiveness without requiring a special circuit for the drive circuit of the bimorph piezoelectric element. FIG. 1 is a schematic diagram showing the structure of a bimorph piezoelectric element according to the present invention.

第1図で、圧電セラミツク素子110,120は、たと
えばPZT系あるいは三成分系材料の圧電セラミツク素
子である、電極21,22,23,24は通常の製造工
程により得られた電極である、中間層の弾性体層4はバ
イモルフ圧電素子の不要振動を除去あるいは減衰するた
めのものである。接着剤層3はこれらの素子を結合する
ためのものである。第2図は鋸歯状波の偏向電圧を与え
たときの第1図に示す構造の本発明に係るバイモルフ圧
電素子の応答特性を示す。なお第2図で波形Aは偏向電
圧、波形Bはバイモルフ圧電素子の応答を示す。本発明
は複数の圧電セラミツク素子を積層結合してなるバイモ
ルフ圧電素子において、前記圧電セラミツク素子間に不
要振動を制御する弾性体層を設けたバイモルフ圧電素子
であり、特に弾性体層としてヤング率1×10−4〜5
刈010(N/mうの物質を用いる事により優れた特性
のものが得られるというものである。
In FIG. 1, piezoelectric ceramic elements 110 and 120 are piezoelectric ceramic elements made of, for example, PZT-based or ternary material. Electrodes 21, 22, 23, and 24 are electrodes obtained through normal manufacturing processes. The elastic layer 4 is for removing or damping unnecessary vibrations of the bimorph piezoelectric element. Adhesive layer 3 is for bonding these elements together. FIG. 2 shows the response characteristics of the bimorph piezoelectric element according to the present invention having the structure shown in FIG. 1 when a sawtooth wave deflection voltage is applied. In FIG. 2, waveform A represents the deflection voltage, and waveform B represents the response of the bimorph piezoelectric element. The present invention relates to a bimorph piezoelectric element formed by laminating and bonding a plurality of piezoelectric ceramic elements, in which an elastic layer is provided between the piezoelectric ceramic elements to control unnecessary vibrations, and in particular, the elastic layer has a Young's modulus of 1. ×10-4~5
It is said that excellent properties can be obtained by using a material with a yield of 0.10 N/m.

なお本発明に用いられる弾性体の材料は圧電セラミツク
素子の材料、形状等により適宜選択されるが、実用上薄
い鉛シート、半田シート、弾性ゴム等のヤング率が1刈
『4〜5刈010(N/mつの物質を用いる事が好まし
い。
The material of the elastic body used in the present invention is appropriately selected depending on the material, shape, etc. of the piezoelectric ceramic element, but in practice, the Young's modulus of thin lead sheets, solder sheets, elastic rubber, etc. (It is preferable to use N/m substances.

以下本発明を実施例により詳細に説明する。The present invention will be explained in detail below using examples.

なお上記実施例においては、圧電セラミツク素子として
は長さが17mm及び14m7!t1幅8韮、厚み0.
31nmでヤング率が8×1010(N/M2)のセラ
ミツクスを用い、又弾性体層としては長さ17mn、幅
8鰭、厚み0.1韮でヤング率が約7×108(N/M
2)のポリエチレンフイルムシートを用いた。また偏向
電圧は周波数30Hzのものを用いた。次に比較例とし
て第1図において弾性体層4を除き他は同一条件とした
第3図に示す如き構造のバイモルフ圧電素子について偏
向電圧とバイモルフ圧電素子の応答との関係を第4図に
示した。なお波形Aは偏向電圧を、波形Bはバイモルフ
圧電素子の応答をそれぞれ示す。この結果から明らかな
如く、本発明を用いる事により不要振動はほとんど除去
され、理想的なバイモルフ圧電素子が得られる。なお上
記実施例ではポリエチレンフイルムシートを弾性体層と
して用いたが、挿入する材料はその大きさ、厚み等を変
えることにより効果が異なるので、最も特性が改善され
る形状を選ぶ必要がある、また弾性体層に部分的な空げ
きを作る、ことあるいはハニカム構造の弾性体層を挿入
することも可能である、以上のような弾性体層を挿入し
たバイモルフ圧電素子はこの素子の偏向できる範囲を制
限することなくかつ不要振動を除去もしくは減衰するこ
とを可能にする、このような手法においてはバイモルフ
圧電素子の駆動回路に特殊な回路を付加することなく安
価に応答性の良いバイモルフ圧電素子を提供することを
可能にした。
In the above embodiment, the length of the piezoelectric ceramic element is 17 mm and 14 m7! T1 width 8mm, thickness 0.
Ceramics with a thickness of 31 nm and a Young's modulus of 8 x 1010 (N/M2) are used, and the elastic layer has a length of 17 mm, a width of 8 fins, a thickness of 0.1 mm, and a Young's modulus of about 7 x 108 (N/M2).
The polyethylene film sheet of 2) was used. Further, the deflection voltage used had a frequency of 30 Hz. Next, as a comparative example, FIG. 4 shows the relationship between the deflection voltage and the response of the bimorph piezoelectric element for a bimorph piezoelectric element having the structure shown in FIG. 3 under the same conditions except for the elastic layer 4 in FIG. Ta. Note that waveform A shows the deflection voltage, and waveform B shows the response of the bimorph piezoelectric element. As is clear from this result, by using the present invention, unnecessary vibrations are almost eliminated and an ideal bimorph piezoelectric element can be obtained. In the above example, a polyethylene film sheet was used as the elastic layer, but the effect varies depending on the size, thickness, etc. of the inserted material, so it is necessary to select the shape that will improve the properties the most. It is also possible to create a partial gap in the elastic layer or insert a honeycomb structured elastic layer.A bimorph piezoelectric element with an elastic layer inserted as described above has a deflectable range of the element. This method makes it possible to remove or attenuate unnecessary vibrations without any restrictions, and provides a bimorph piezoelectric element with good responsiveness at low cost without adding a special circuit to the drive circuit of the bimorph piezoelectric element. made it possible to do so.

なおバイモルフ圧電素子の構造はVTR用のものを用い
て説明したため片持支持方式を考えたが本発明の効果は
片持支持のバイモルフ素子に限るものではない。またバ
イモルフ圧電素子の応用例としてはVTRのみではなく
、たとえばビデオデイスクなど光学系を応用した装置の
偏向素子として使用が可能でありバイモルフ素子の応答
性の改善はこれらの装置への組込みを容易にする。また
本発明は複数の圧電セラミツク素子を積層結合したプツ
シユプル型のものに限らず、金属基板上に圧電セラミツ
ク素子を積層結合したバイモルフ圧電素子に用いても同
様の効果を得られる事は言うまでもない。図面の簡1単
な説明 第1図は本発明に係るバイモルフ圧電素子の構造例を示
す概略図、第2図は本発明に係るバイモルフ圧電素子の
偏向電圧に対する応答を示す図、第3図は従来のバイモ
ルフ圧電素子の構造例を示す概略図、第4図は従来のバ
イモルフ圧電素子の偏向電圧に対する応答を示す図。
The structure of the bimorph piezoelectric element has been explained using a structure for a VTR, so a cantilever support method was considered, but the effects of the present invention are not limited to cantilever support bimorph elements. In addition, bimorph piezoelectric elements can be used not only in VTRs, but also as deflection elements in devices that apply optical systems, such as video discs, and the improved response of bimorph devices makes it easy to incorporate them into these devices. do. It goes without saying that the present invention is not limited to a push-pull type device in which a plurality of piezoelectric ceramic elements are stacked and bonded, but can also be used in a bimorph piezoelectric device in which piezoelectric ceramic elements are stacked and bonded on a metal substrate to obtain the same effect. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram showing an example of the structure of the bimorph piezoelectric element according to the present invention, FIG. 2 is a diagram showing the response of the bimorph piezoelectric element according to the present invention to deflection voltage, and FIG. FIG. 4 is a schematic diagram showing an example of the structure of a conventional bimorph piezoelectric element, and FIG. 4 is a diagram showing the response of the conventional bimorph piezoelectric element to a deflection voltage.

110,120・・・・・・圧電セラミツク素子、21
,22,23,24・・・・・・電極、3・・・・・・
接着剤層、4・・・・・・弾性体層。
110, 120...Piezoelectric ceramic element, 21
, 22, 23, 24... Electrode, 3...
Adhesive layer, 4...Elastic layer.

Claims (1)

【特許請求の範囲】 1 複数の圧電セラミック素子を積層結合してなるバイ
モルフ圧電素子において、前記圧電セラミック素子間に
不要振動を制御する弾性体層を設けた事を特徴とするバ
イモルフ圧電素子。 2 特許請求の範囲第1項において弾性体層としてヤン
グ率が1×10^−^4〜5×10^1^0(N/m^
2)の物質を用いた事を特徴とするバイモルフ圧電素子
[Scope of Claims] 1. A bimorph piezoelectric element formed by laminating and bonding a plurality of piezoelectric ceramic elements, characterized in that an elastic layer for controlling unnecessary vibrations is provided between the piezoelectric ceramic elements. 2 In claim 1, the elastic layer has a Young's modulus of 1 x 10^-^4 to 5 x 10^1^0 (N/m^
A bimorph piezoelectric element characterized by using the substance of 2).
JP55046733A 1980-04-11 1980-04-11 bimorph piezoelectric element Expired JPS5946432B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55046733A JPS5946432B2 (en) 1980-04-11 1980-04-11 bimorph piezoelectric element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55046733A JPS5946432B2 (en) 1980-04-11 1980-04-11 bimorph piezoelectric element

Publications (2)

Publication Number Publication Date
JPS56144585A JPS56144585A (en) 1981-11-10
JPS5946432B2 true JPS5946432B2 (en) 1984-11-12

Family

ID=12755525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55046733A Expired JPS5946432B2 (en) 1980-04-11 1980-04-11 bimorph piezoelectric element

Country Status (1)

Country Link
JP (1) JPS5946432B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61179631U (en) * 1985-04-27 1986-11-10
JPS6352232U (en) * 1986-09-25 1988-04-08

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919384A (en) * 1982-07-23 1984-01-31 Omron Tateisi Electronics Co Piezoelectric bimorph
JPS60137462U (en) * 1984-02-23 1985-09-11 ティーディーケイ株式会社 actuator element
JPH0658978B2 (en) * 1984-05-21 1994-08-03 株式会社村田製作所 Piezoelectric displacement element
JP3198355B2 (en) * 1991-05-28 2001-08-13 キヤノン株式会社 Small displacement element, scanning tunnel microscope using the same, and information processing apparatus
JPWO2016132581A1 (en) * 2015-02-18 2017-08-24 株式会社村田製作所 Piezoelectric element and piezoelectric sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61179631U (en) * 1985-04-27 1986-11-10
JPS6352232U (en) * 1986-09-25 1988-04-08

Also Published As

Publication number Publication date
JPS56144585A (en) 1981-11-10

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