JPS594367B2 - Method for producing seleno nickel ferrite (NiFe↓2Se↓4) by applying high pressure and high temperature - Google Patents
Method for producing seleno nickel ferrite (NiFe↓2Se↓4) by applying high pressure and high temperatureInfo
- Publication number
- JPS594367B2 JPS594367B2 JP54094821A JP9482179A JPS594367B2 JP S594367 B2 JPS594367 B2 JP S594367B2 JP 54094821 A JP54094821 A JP 54094821A JP 9482179 A JP9482179 A JP 9482179A JP S594367 B2 JPS594367 B2 JP S594367B2
- Authority
- JP
- Japan
- Prior art keywords
- seleno
- nickel ferrite
- producing
- nife
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】 本発明はセレノ・ニッケル・フェライト （ＮｉＦｅ２Ｓｅ４）の製造方法に関するものである。[Detailed description of the invention] The present invention is based on seleno nickel ferrite. (NiFe2Se4).
セレノ・ニッケル・フェライトは新規物質で、半導体変
換素子としての用途が考えられる。従来半導体変換素子
としては、光電素子、磁電素子、圧電素子、熱電素子、
感応素子、放射線素子が現実に利用されており、この新
規物質は、光導電セル、光増幅器、半導体レーザ、超音
波変換器、超音波増幅器、赤外線検出器、熱電発電、電
子冷却素子などに利用されているカルコゲン化合物（Ｃ
ｄＳ、ＣｄＳｅ、、Ｂｉ２Ｔｅ３など）と同様に利用す
ることができる。本発明はＮｉＦｅ２Ｓｅ４組成物のＰ
Ｔ状態図について、鋭意研究を重ねた結果、高圧高温を
同時に印加すれば、結晶構造変化をおこし、新物質のえ
られることを見出し本発明を完成するに至つた。Seleno-nickel ferrite is a new material that can be used as a semiconductor conversion element. Conventional semiconductor conversion elements include photoelectric elements, magnetoelectric elements, piezoelectric elements, thermoelectric elements,
Sensing elements and radiation elements are actually used, and this new material can be used in photoconductive cells, optical amplifiers, semiconductor lasers, ultrasonic transducers, ultrasonic amplifiers, infrared detectors, thermoelectric power generation, electronic cooling elements, etc. The chalcogen compound (C
dS, CdSe, Bi2Te3, etc.). The present invention provides P of NiFe2Se4 composition.
As a result of intensive research on the T phase diagram, they discovered that if high pressure and high temperature are simultaneously applied, a crystal structure change occurs and a new substance can be obtained, leading to the completion of the present invention.
５ 本発明はニッケル、鉄、セレンのモル比が１２：４
である混合物に３．５〜６．５ＧＰａの圧力と８００〜
１０００℃の温度を同時に印加保持することを特徴とす
るセレノ・ニッケル・フェライト（ＮｉＦｅ２Ｓｅ４）
の製造方法である。5 In the present invention, the molar ratio of nickel, iron, and selenium is 12:4.
A pressure of 3.5 to 6.5 GPa and a pressure of 800 to
Seleno nickel ferrite (NiFe2Se4) characterized by the ability to simultaneously apply and maintain a temperature of 1000°C
This is a manufacturing method.
１０ニッケル、鉄、セレンの１：２：４モル比混合物に
３．５ＧＰａ以上の圧力、８００℃以上の温度を同時に
印加することにより新規化合物セレノ・ニッケル・フェ
ライト（ＮｉＦｅ２Ｓｅ４）をうることができる。A new compound, seleno-nickel ferrite (NiFe2Se4), can be obtained by simultaneously applying a pressure of 3.5 GPa or more and a temperature of 800° C. or more to a 1:2:4 molar ratio mixture of nickel, iron, and selenium.
結晶構造変化は圧力、温度により左右さ１５れ一定しな
いが、通常１０〜６０分で十分である。結晶構造変化を
おこさせた後、常温まで急冷し、ついで常圧まで減圧し
て新規化合物セレノ・ニッケル・フェライト（ＮｉＦｅ
２Ｓｅ４）をうることができた。■０ 表１に新規化合
物セレノ・ニッケル・フェライト（ＮｉＦｅ２Ｓｅ４沖
Ｘ線回折線を示す。Although the crystal structure change depends on pressure and temperature and is not constant, 10 to 60 minutes is usually sufficient. After causing a crystal structure change, the new compound seleno-nickel ferrite (NiFe) is rapidly cooled to room temperature and then reduced to normal pressure.
2Se4) was obtained. ■0 Table 1 shows the X-ray diffraction lines of the new compound seleno-nickel ferrite (NiFe2Se4).
表 ＩＸ線回折線マ５
フ【−
本発明に従うとニツケル、鉄、セレンの１：２：４モル
比混合物から新規化合物セレノ・ニツケル・フエライト
を非常に９８％高でうることができる。Table IX-ray diffraction line map 5 [- According to the present invention, the new compound seleno-nickel ferrite can be obtained from a mixture of nickel, iron and selenium in a molar ratio of 1:2:4 at a very high 98%.
次に実施例によつて本発明をさらに詳細に説明する。実
施例 １
ニツケル、鉄、セレンの１：２：４モル比混合物を予備
成形し、黒鉛管にそう入しこれを圧力媒体としてのバイ
ロフイライト中に装填する。Next, the present invention will be explained in more detail with reference to Examples. Example 1 A mixture of nickel, iron and selenium in a molar ratio of 1:2:4 is preformed and placed in a graphite tube which is loaded into birofilite as pressure medium.
Claims (1)
物に反応と結晶構造変化をおこさせるに必要な圧力３．
５ＧＰａ以上と温度８００℃以上を同時に印加保持する
ことを特徴とするセレノ・ニッケル・フェライト（Ｎｉ
Ｆｅ＿２Ｓｅ＿４）の製造方法。1. Pressure required to cause reaction and crystal structure change in a 1:2:4 molar mixture of nickel, iron and selenium3.
Seleno nickel ferrite (Ni
Method for producing Fe_2Se_4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54094821A JPS594367B2 (en) | 1979-07-24 | 1979-07-24 | Method for producing seleno nickel ferrite (NiFe↓2Se↓4) by applying high pressure and high temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54094821A JPS594367B2 (en) | 1979-07-24 | 1979-07-24 | Method for producing seleno nickel ferrite (NiFe↓2Se↓4) by applying high pressure and high temperature |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5617909A JPS5617909A (en) | 1981-02-20 |
| JPS594367B2 true JPS594367B2 (en) | 1984-01-30 |
Family
ID=14120712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54094821A Expired JPS594367B2 (en) | 1979-07-24 | 1979-07-24 | Method for producing seleno nickel ferrite (NiFe↓2Se↓4) by applying high pressure and high temperature |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS594367B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0121902Y2 (en) * | 1983-03-05 | 1989-06-28 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| LU83768A1 (en) * | 1981-11-18 | 1983-09-01 | Wurth Paul Sa | DAIRY PELLET PROCESS AND PLANT |
| JPS61127623A (en) * | 1984-11-20 | 1986-06-14 | Osaka Cement Kk | Synthesizing method of transition metal chalcogen compound |
-
1979
- 1979-07-24 JP JP54094821A patent/JPS594367B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0121902Y2 (en) * | 1983-03-05 | 1989-06-28 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5617909A (en) | 1981-02-20 |
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