JPS593557U - Monolithic microwave integrated circuit - Google Patents
Monolithic microwave integrated circuitInfo
- Publication number
- JPS593557U JPS593557U JP9896982U JP9896982U JPS593557U JP S593557 U JPS593557 U JP S593557U JP 9896982 U JP9896982 U JP 9896982U JP 9896982 U JP9896982 U JP 9896982U JP S593557 U JPS593557 U JP S593557U
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- microwave integrated
- monolithic microwave
- metal film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Waveguides (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来のマイクロ波集積回路を使ったマイクロ波
トランジスタ増幅器の斜視図、第2図はこの考案による
モノリシックマイクロ波集積回路で構成したマイクロ波
トランジスタ増幅器の斜視図である。
図中、1はトランジスタ、2は誘電体基板、3は接地導
体、4はストリップ導体、5は島状の金属膜、6は金属
細線、7は金属リボン、10は基板、11はトランジス
タ部分、12はエアブリッジである。なお、図中、同一
あるいは相当部分には同一符号を付して示しである。FIG. 1 is a perspective view of a microwave transistor amplifier using a conventional microwave integrated circuit, and FIG. 2 is a perspective view of a microwave transistor amplifier constructed using a monolithic microwave integrated circuit according to this invention. In the figure, 1 is a transistor, 2 is a dielectric substrate, 3 is a ground conductor, 4 is a strip conductor, 5 is an island-shaped metal film, 6 is a thin metal wire, 7 is a metal ribbon, 10 is a substrate, 11 is a transistor part, 12 is an air bridge. In the drawings, the same or corresponding parts are designated by the same reference numerals.
Claims (1)
リシックマイクロ波集積回路において、2スタブチユー
ナの一部又はすべてを基板上に島状に設けた金属膜と上
記金属膜を接続するための基板上に空間を介して設けた
金属膜とで構成したことを特徴とするモノリシックマイ
クロ波集積回路。In a monolithic microwave integrated circuit having a stub tuner made of a microstrip, part or all of the two stub tuners are provided on a metal film formed in an island shape on a substrate and a space is provided on the substrate for connecting the metal film. A monolithic microwave integrated circuit characterized by being constructed of a metal film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9896982U JPS593557U (en) | 1982-06-30 | 1982-06-30 | Monolithic microwave integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9896982U JPS593557U (en) | 1982-06-30 | 1982-06-30 | Monolithic microwave integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS593557U true JPS593557U (en) | 1984-01-11 |
JPS6348961Y2 JPS6348961Y2 (en) | 1988-12-16 |
Family
ID=30234737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9896982U Granted JPS593557U (en) | 1982-06-30 | 1982-06-30 | Monolithic microwave integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS593557U (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61150244A (en) * | 1984-12-24 | 1986-07-08 | Nec Corp | Microwave monolithic ic |
EP0320013A2 (en) | 1987-12-09 | 1989-06-14 | Nippon Chemi-Con Corporation | Chip type capacitor and manufacturing thereof |
JPH01289239A (en) * | 1988-05-17 | 1989-11-21 | Nippon Chemicon Corp | Linked body of chip-type capacitors |
JPH01289238A (en) * | 1988-05-17 | 1989-11-21 | Nippon Chemicon Corp | Manufacture of chip-type capacitor |
JP2014003077A (en) * | 2012-06-15 | 2014-01-09 | Toshiba Corp | Package for high-frequency semiconductor |
JP2014107398A (en) * | 2012-11-27 | 2014-06-09 | Mitsubishi Electric Corp | High-frequency device |
-
1982
- 1982-06-30 JP JP9896982U patent/JPS593557U/en active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61150244A (en) * | 1984-12-24 | 1986-07-08 | Nec Corp | Microwave monolithic ic |
EP0320013A2 (en) | 1987-12-09 | 1989-06-14 | Nippon Chemi-Con Corporation | Chip type capacitor and manufacturing thereof |
JPH01289239A (en) * | 1988-05-17 | 1989-11-21 | Nippon Chemicon Corp | Linked body of chip-type capacitors |
JPH01289238A (en) * | 1988-05-17 | 1989-11-21 | Nippon Chemicon Corp | Manufacture of chip-type capacitor |
JP2014003077A (en) * | 2012-06-15 | 2014-01-09 | Toshiba Corp | Package for high-frequency semiconductor |
JP2014107398A (en) * | 2012-11-27 | 2014-06-09 | Mitsubishi Electric Corp | High-frequency device |
US9484321B2 (en) | 2012-11-27 | 2016-11-01 | Mitsubishi Electric Corporation | High frequency device |
Also Published As
Publication number | Publication date |
---|---|
JPS6348961Y2 (en) | 1988-12-16 |
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