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JPS5933538B2 - Compound having a layered structure of hexagonal crystal threads represented by TmAlMnO↓4 and method for producing the same - Google Patents

Compound having a layered structure of hexagonal crystal threads represented by TmAlMnO↓4 and method for producing the same

Info

Publication number
JPS5933538B2
JPS5933538B2 JP11832981A JP11832981A JPS5933538B2 JP S5933538 B2 JPS5933538 B2 JP S5933538B2 JP 11832981 A JP11832981 A JP 11832981A JP 11832981 A JP11832981 A JP 11832981A JP S5933538 B2 JPS5933538 B2 JP S5933538B2
Authority
JP
Japan
Prior art keywords
compound
layered structure
tmalmno
producing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11832981A
Other languages
Japanese (ja)
Other versions
JPS5820724A (en
Inventor
昇 君塚
英治 高山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Original Assignee
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO filed Critical KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority to JP11832981A priority Critical patent/JPS5933538B2/en
Publication of JPS5820724A publication Critical patent/JPS5820724A/en
Publication of JPS5933538B2 publication Critical patent/JPS5933538B2/en
Expired legal-status Critical Current

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  • Inorganic Compounds Of Heavy Metals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【発明の詳細な説明】 本発明は新規化合物であるTmAlMnO4で示される
六方晶系の層状構造を有する化合物およびその製造法に
関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel compound TmAlMnO4 having a hexagonal layered structure and a method for producing the same.

従来、YFe2O4で示される六方晶系の層状構造を有
する化合物は知られる。
Conventionally, compounds having a hexagonal layered structure represented by YFe2O4 are known.

この化合物はY3+Fe2+Fe3+O「で示されるよ
うに、鉄の2価イオンと3価イオンは5配位の酸素イオ
ンに囲まれ、Yは6配位の酸素イオンをその周りに持つ
ている化合物であり、磁性を持つている。本発明は前記
Y3+Fe2+Fe3+OH−の化合物のY3+の代り
にTm3+、Fe2+の代りにMn2+を(Fe3+の
代りにAl3+を)置きかえた新規な化合物およびその
製造法を提供するにある。本発明のTmAlMnO4で
示される化合物は、この化合物中、ツリウムはTm3+
イオン、マンガンはMn2+、アルミニウムは3価イオ
ンとして存在5 しており、Tm3+Al3+Mn2+
01−として表わすことができる。この結晶は第1図に
示すような六方晶層状構造を持つている。最大の丸は酸
素、中丸はツリウム、最小の黒丸はアルミニウムとMn
を示す。
This compound is a compound in which divalent and trivalent iron ions are surrounded by five-coordinated oxygen ions, and Y has six-coordinated oxygen ions around it, as shown by Y3+Fe2+Fe3+O. The present invention provides a novel compound in which Y3+ is replaced by Tm3+, Fe2+ is replaced by Mn2+ (Fe3+ is replaced by Al3+), and a method for producing the same is provided. In the compound represented by TmAlMnO4 of the present invention, thulium is Tm3+
ions, manganese exists as Mn2+, aluminum exists as trivalent ions5, and Tm3+Al3+Mn2+
01-. This crystal has a hexagonal layered structure as shown in FIG. The largest circle is oxygen, the middle circle is thulium, and the smallest black circle is aluminum and Mn.
shows.

アルミニウムとマ10ンガンはランダムに入つている。
マンガンの2価イオンとアルミニウムの3価イオンは5
配位の酸素イオンによつて囲まれ、結晶学的には同一の
位置を占めている。またツリウムは6配位の酸素をその
周りに持つている。陰イオンである酸素は緻15密構造
をとつている。この結晶の面指数(hkl)、面間隔(
dλ)(doは実測、dcは計算値を示す)、X線に対
する相対反射強度(I%)は第1表の通りである。
Aluminum and magenta guns are included randomly.
The divalent ion of manganese and the trivalent ion of aluminum are 5
It is surrounded by coordinating oxygen ions and occupies the same crystallographic position. Thulium also has six-coordinated oxygen atoms around it. Oxygen, which is an anion, has a dense 15-pack structure. The plane index (hkl) of this crystal, the plane spacing (
dλ) (do is an actual measurement, dc is a calculated value), and the relative reflection intensity (I%) for X-rays is as shown in Table 1.

そして空間群はR、mで、その晶癖は板状晶で、20格
子定数は次の通りである。a0=3.4590±0.0
004(A)c0=24.912±O、004(λ)2
5第1表TmAlMn04 この化合物は触媒材料ならびに半導体材料として有用な
ものである。
The space group is R, m, the crystal habit is plate-like, and the 20 lattice constant is as follows. a0=3.4590±0.0
004(A)c0=24.912±O, 004(λ)2
5 Table 1 TmAlMn04 This compound is useful as a catalyst material as well as a semiconductor material.

この化合物は次の方法によつて製造し得られる。This compound can be produced by the following method.

ツリウム酸化物(Tm2O3)、マンガン酸化物(Mn
O)および酸化アルミニウム(Al2O3)を、モル比
で約1対2対1の割合で混合し、該混合物を非酸化性雰
囲気下で1300℃以上の温度で加熱することによつて
製造することができる。本発明に用いるツリウム酸化物
は市販のものをそのまま使用してもよいが、酸化物相互
の反応を速やかに進行させるためには、粒径が小さい程
よく、特に10μm以下であることが好ましい。また半
導体材料として用いる場合は不純物の混入をきらうので
、原料は純度が高く、また、約1000℃で数時間空気
中で仮焼したものが望ましい。酸化マンガンは通常の試
薬特級程度のものでよい。
Thulium oxide (Tm2O3), manganese oxide (Mn
O) and aluminum oxide (Al2O3) in a molar ratio of about 1:2:1, and heating the mixture at a temperature of 1300 ° C. or higher in a non-oxidizing atmosphere. can. As for the thulium oxide used in the present invention, commercially available products may be used as they are, but in order to speed up the reaction between the oxides, the smaller the particle size, the better, particularly preferably 10 μm or less. When used as a semiconductor material, since contamination with impurities is to be avoided, the raw material should preferably be of high purity and should have been calcined in air at about 1000° C. for several hours. Manganese oxide of ordinary reagent grade level may be used.

粒径は前記ツリウム酸化物と同様な理由で10μm以下
であることが好ましい。また、1000℃で1日間炭酸
ガスと水素の混合ガス(混合比容量で1対1)中で仮焼
し、O℃に急冷させたものが反応が早くなるので好まし
い。酸化アルミニウムは試薬特級程度のものでよい。そ
の粒径は前記と同様に10μm以下であることが好まし
い。また1000℃で1日間空気中で仮焼したものが好
ましい。これらの原料をそのまま、あるいはアルコール
類、アセトン等を入れ十分混合する。これらの混合割合
はTm2O3、MnO,.Al2O3をモル比で1対2
対1の割合である。
The particle size is preferably 10 μm or less for the same reason as the thulium oxide. Further, it is preferable to calcinate in a mixed gas of carbon dioxide and hydrogen (mixture ratio: 1:1 by volume) at 1000° C. for one day, and then rapidly cool to 0° C., because the reaction speeds up. The aluminum oxide may be of special reagent grade. As mentioned above, the particle size is preferably 10 μm or less. Moreover, it is preferable to calcined it in air at 1000° C. for one day. These raw materials are thoroughly mixed as they are or with alcohol, acetone, etc. added. These mixing ratios are Tm2O3, MnO, . Al2O3 molar ratio 1:2
The ratio is 1:1.

この割合をはずれると目的とする層状化合物を得ること
ができない。これらの混合物を白金の容器に封入して非
酸化性雰囲気下で加熱する。
If this ratio is exceeded, the desired layered compound cannot be obtained. These mixtures are sealed in a platinum container and heated under a non-oxidizing atmosphere.

それはマンガンが2価の状態であるので、酸化性雰囲気
(例えば大気中)下ではマンガンが酸化されて3価にな
つてしまうので、非酸化性雰囲気下であることが必要で
ある。加熱温度は1300℃以下であればよ(・o加熱
の際の昇温速度は制約はない。反応終了後はO℃に急冷
するかあるいは大気中に急激に引出せばよい。
Since manganese is in a divalent state, in an oxidizing atmosphere (for example, in the atmosphere), manganese will be oxidized and become trivalent, so it is necessary to be in a non-oxidizing atmosphere. The heating temperature should be 1300°C or less (・o There are no restrictions on the rate of temperature increase during heating. After the reaction is completed, it may be rapidly cooled to 0°C or rapidly drawn out into the atmosphere.

得られたTmAlMnO4化合物は黒色金属光沢を有し
、粉末X線回折法によつて結晶構造を有することが分つ
た。
The obtained TmAlMnO4 compound had a black metallic luster and was found to have a crystalline structure by powder X-ray diffraction.

その構造は、既に本出願人が得たYFe2O4と同型で
あることがわかつた。出発混合試料と反応生成物の試料
重量を精密に秤量し、得られた試料の化学量論数が決定
された。実施例 純度99.9%以上のツリウム酸化物(Tm2O3)粉
末、純度99.9%以上の酸化マンガン(MnO)粉末
および純度99。
It was found that its structure was the same as that of YFe2O4 already obtained by the applicant. The sample weights of the starting mixed sample and the reaction product were precisely weighed, and the stoichiometry of the resulting sample was determined. Examples Thulium oxide (Tm2O3) powder with a purity of 99.9% or more, manganese oxide (MnO) powder with a purity of 99.9% or more, and a purity of 99.

9%以上のアルミニウム酸化物(Al2O3)粉末をモ
ル比で1対2対1の割合に秤量し、乳鉢内でアセトンを
加えて十分に混合して平均粒径数μmの微粉末混合物を
得た。
Aluminum oxide (Al2O3) powder of 9% or more was weighed at a molar ratio of 1:2:1, and acetone was added in a mortar and mixed thoroughly to obtain a fine powder mixture with an average particle size of several μm. .

該混合物を白金管(内径8mm)内に入れて溶封した。
これを1500′Cに設定された箱型のシリコニツト炉
内に入れ、約3日間加熱し、その後試料を取出し室温ま
で急速に冷却した。得られたものはTmAlMnO4の
六方晶系の層状化合物であつた。その結晶の性状は第1
表に示す通りであつた。
The mixture was placed in a platinum tube (inner diameter 8 mm) and sealed.
This was placed in a box-shaped siliconite furnace set at 1500'C and heated for about 3 days, after which the sample was removed and rapidly cooled to room temperature. What was obtained was a hexagonal layered compound of TmAlMnO4. The properties of the crystal are the first
It was as shown in the table.

【図面の簡単な説明】[Brief explanation of drawings]

図面は本発明のTmAlMnO4の結晶の図である。 The drawing is a diagram of a TmAlMnO4 crystal of the present invention.

Claims (1)

【特許請求の範囲】 1 TmAlMnO_4で示される六方晶系の層状構造
を有する化合物。 2 ツリウム酸化物(Tm_2O_3)、マンガン酸化
物(MnO)およびアルミナ(Al_2O_3)を、モ
ル比で約1対2対1の割合で混合し、この混合物を非酸
化性雰囲気下で1300℃以上の温度で加熱することを
特徴とするTmAlMnO_4で示される六方晶系の層
状構造を有する化合物の製造法。
[Claims] 1 A compound having a hexagonal layered structure represented by TmAlMnO_4. 2 Thulium oxide (Tm_2O_3), manganese oxide (MnO) and alumina (Al_2O_3) are mixed at a molar ratio of approximately 1:2:1, and this mixture is heated at a temperature of 1300°C or higher in a non-oxidizing atmosphere. 1. A method for producing a compound having a hexagonal layered structure represented by TmAlMnO_4, the method comprising heating at .
JP11832981A 1981-07-28 1981-07-28 Compound having a layered structure of hexagonal crystal threads represented by TmAlMnO↓4 and method for producing the same Expired JPS5933538B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11832981A JPS5933538B2 (en) 1981-07-28 1981-07-28 Compound having a layered structure of hexagonal crystal threads represented by TmAlMnO↓4 and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11832981A JPS5933538B2 (en) 1981-07-28 1981-07-28 Compound having a layered structure of hexagonal crystal threads represented by TmAlMnO↓4 and method for producing the same

Publications (2)

Publication Number Publication Date
JPS5820724A JPS5820724A (en) 1983-02-07
JPS5933538B2 true JPS5933538B2 (en) 1984-08-16

Family

ID=14733967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11832981A Expired JPS5933538B2 (en) 1981-07-28 1981-07-28 Compound having a layered structure of hexagonal crystal threads represented by TmAlMnO↓4 and method for producing the same

Country Status (1)

Country Link
JP (1) JPS5933538B2 (en)

Also Published As

Publication number Publication date
JPS5820724A (en) 1983-02-07

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