JPS5929427A - Production device system of semiconductor device - Google Patents

Abstract

PURPOSE:To automate sections as connectors among processes, and to change one part of the production line of the semiconductor device into a continuous production line by introducing an inspection device with an automatic inspection mechanism and giving instructions as treatment compensating a displacement section from a rated value. CONSTITUTION:A resist film 52 is applied onto a polycrystalline silicon film 51 formed through a process PN-1, thermally shrunk slightly for approximately 10min at approximately 50 deg.C, positioned and exposed, and developed by using a developer of the resist film 52, and external appearance is inspected and the whole is thermally shrunk for 1hr at approximately 200 deg.C when there is no abnormality. The polycrystalline silicon film 51 is etched in plasma by using a gas of a CF4 group, and the resist film 52 as a mask for etching is exfoliated and the film is advanced to an inspection system CN. When the processing width L of the polycrystalline silicon 51 is displaced at that time, the result is transmitted over a process PN+1 by the inspection system CN, heat is diffused in the lateral direction through a process as heat treatment by a nitrogen air- current after ion implantation, and a heat treatment furnace system is adjusted automatically so that effective channel length Leff is made the same as polycrystalline silicon gate electrode width L is used as a central value.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a production equipment system for semiconductor devices, and a production equipment system for automatically and integratedly producing semiconductor devices in a city.

Semiconductor devices are generally made from semiconductor single crystal wafer, and are manufactured using epitaxial growth, i, 2, resist coating, top light, SL, etching.
, impurity doping (thermal expansion or iranian injection) gas II
It is manufactured by repeating a series of processes such as J2'I length (polycrystalline silicon, ♀2 chemical film, hardened silicon film, etc.), I-engineering material, etc. Each of these processes is interconnected, and the best results are determined within the overall flow.

Conventionally, in this process, fl+lI (Fil has become increasingly automated, and /?:1TiNdayj'' V
The quality control technology using 7 products has already become sophisticated. However, the connecting parts between the processes and the process I) still need to be done manually, or by mere pots.
;L';=4'Only υ wafers are received and received by Office I・■-5]. If we try to compensate for the influence of fluctuations in the pre-processing time and post-processing, we will have to rely on manual control within each individual process, and the "human" source of dust will be exposed. 9; It is difficult to remove it from inside the fin.

An object of the present invention is to provide a technology for manufacturing semiconductor devices by automating the connecting parts between processes and making at least a portion of the semiconductor device manufacturing line an integrated production line.

The present invention provides an inspection apparatus C having an automatic inspection mechanism between a manufacturing apparatus MN of a certain process PN and a manufacturing apparatus MN+1 of the next process PN+1 in a production apparatus board system for semiconductor devices.
N is introduced, the median value of the inspection item and the upper and lower limits of the allowable range are set in advance on the inspection device CN, and if the inspection result is the median value, 10% of the product is transferred to the next process PN+1 manufacturing device MN+1. However, if the inspection result is out of specification, it will be considered a defective product and will not be sent to the manufacturing equipment MN-1-1 of the next factory PN+t.
In addition, even if it is within the specification, if it deviates from the neutral value to the positive side, the deviation will be compensated for the manufacturing equipment M N+ 1 of the next process PN+1 or the manufacturing equipment M N+M of the subsequent process PN+M. If it deviates to the negative side from the median value, the fM frame building device pi+1 of the next process Ph++x or the manufacturing device MN+M of the subsequent process PN+M will be compensated in the opposite direction to the above compensation. The next process PN+
This is a production equipment system for semiconductor devices, characterized in that the production line is configured so as to be able to pass through the manufacturing equipment F (; MN + 1) of 7゛ζ.

Further, the present invention provides an inspection apparatus having an automatic inspection floor function between a manufacturing apparatus MN of a certain process PN and a manufacturing apparatus M, N + t of the next process PN+x in a semiconductor device production equipment system. CN is introduced, and the central 1 city of the inspection item and the permissible upper and lower limit values are set in advance on the inspection device CN, and f! #If the test result is the median value, the product will proceed to the next process, but if the test result is out of specification, it will be considered a defective product and will be moved to the next process PN+t y1'! It will not proceed to manufacturing equipment MN+1, and even if it is within the specifications, if it deviates from the median by a positive 1 or 11, it will not proceed to manufacturing equipment MN+ for the next process PN41.
1 step down process PN 4M manufacturing equipment MN+
An instruction is given to u to compensate for the deviation (Jl') from t7, and an instruction is given to the manufacturing equipment MN of process PN to make the Φ value closer to the median value. If it deviates to the negative side, the manufacturing device MN + 1 of the next process PN− day or the manufacturing device MN + λ of the subsequent process PN + M (in order to compensate for the deviation in the opposite direction to the above) At the same time, an instruction is issued to the manufacturing equipment MN of the process PN to change the conditions to bring it closer to the median value, and the product is sent to the manufacturing equipment MN + 1 of the next process PN+1. This is a production equipment system for semiconductor devices, characterized in that a production line is configured.

According to the present invention, the manufacturing apparatus MN of the process PN and the next process PN+
It is possible to connect the manufacturing equipment WM N + 1 to the manufacturing equipment WM N + 1 and to automate the manufacturing of semiconductor devices.

Furthermore, the present invention eliminates the need for humans, who are the source of development, to be present on the production line, making it possible to maintain a high level of cleanliness on the production line. Furthermore, due to the above two effects, there is also the accompanying effect that semiconductor devices can be produced with uniform quality. Furthermore, due to the above effects, the operating rate of the manufacturing equipment can be increased and productivity can be improved.

Next, embodiments of the present invention will be described with reference to the drawings.

First, a conventional method will be explained for comparison. FIGS. 1 and 2 show the conventional technology. Figure 1 shows a method of analyzing data and changing the process after the final dest, and changing the process to increase the rate of non-defective products requires shaking up the finished product. Furthermore, in the method shown in Figure 2, as shown in Figure 1, process changes are made based on not only information on the finished product but also information on intermediate processes, but in both cases the system changes the conditions of the previous process after inspection. Unfortunately, the inspection data has not been sent to the next process. Therefore, once a product deviates from the median value, it will continue to carry that ``deviation'' until the end without being compensated for.

On the other hand, FIG. 3 is a diagram for explaining the system of one embodiment of the present invention. In other words, we will introduce a system with an inspection function between process PN4-1 and check whether the force dimensions or physical measurement values of products that have passed through process PN deviate positively or negatively from the standard median value. For example, if there is a positive deviation, then it is verified whether it is within the standard. If it is out of specification, it will have to be reworked or discarded, but if it is within specification, information will be given to the next process PN+1 that the item has deviated to the positive side in the previous process PN, and the work HL )
By changing the conditions of N + s, the deviation to the positive side is calculated as process P.
Compensate with N-+-1. The same applies if there is a deviation on the negative side, and a mechanism is provided to issue an instruction to change the conditions of step 8PN+x so that the deviation on the negative side is compensated for in step PN41 in the opposite direction.

FIG. 4 is a diagram illustrating the method of the second embodiment of the present invention. That is, it is first verified whether or not the processed dimensions or physical measurement values of the product that has gone through the process 8PN deviate positively or negatively from the medium heat value of the preset standard. If so, then determine whether the deviation is within or outside the specifications.

If the value is outside the standard, the work must be rebuilt or disposed of. Also, if it is within the specifications, information is given to the next process HPN+1 that the product deviates to the positive side in the previous process PN, and the conditions of the next process PN+1 are changed to calculate the deviation to the positive side by process PN+1. to compensate for this. In addition, information that deviates to the positive side regardless of whether it is within or outside the standard is transmitted to the previous process PN, and the process PN itself changes its conditions and corrects it. Similarly, when the deviation is on the negative side, a system is configured to instruct the process 2nd +1 to make a correction 1°t in the positive direction, and also instruct the process 8PN to correct it in the positive direction.

By incorporating the methods shown in FIGS. 3 and 4 into production equipment and establishing a technology for manufacturing as an integrated production system, the quality of the product and the manufacturing line itself will become stable.

This will be explained more specifically using an example. FIG. 5 is a part of the manufacturing process of an integrated circuit using an MO8 type field effect transistor, and shows the etching process of polycrystalline silicon that will become the gate electrode and the next process of forming the source and drain. That is, this is the part that passes through the polycrystalline silicon film growth step PN-1, passes through the polycrystalline silicon processing step PN, and then reaches the source/drain formation step 1'rq+t. Review in detail,
In the fifth step, as shown in J13, a resist film 52 is applied on the polycrystalline silicon n-51 made in step PN-1, and after being lightly baked at about 50°C for 10 minutes, alignment exposure is performed.
) Y:, and then developed using a developer for the resist film 52, and inspected the appearance.
Bake at ℃ for 1 hour. Next, polycrystalline silicon UN51 was plasma etched using CFJ-based gas, and
Thereafter, the itaresist film 52 serves as an etching mask.
It is scraped off and sent to the inspection system CN. Here, it is assumed that FIG. 6 shows an example of the inspection data of the width of the polycrystalline silicon gate electrode after etching, and that the value of wafer N has just been measured. A commercially available length measuring machine using a laser beam may be used for dimension measurement, and the wafer may be transported up to that point using an air belt method or a robot vehicle. Now, like wafer N, the seventh
The median value of L in Figure (a) is 2μIn, which is within the standard (2μ±
0.2μ), but the processing of polycrystalline silicon 71 l1
(Assume that lL is 2.1μ on the positive side as shown in Figure 7 [phase]. Since this wafer is within the standard, the source 53 and drain 54 of the same size as t are formed in Figure 5. No As Proceed to the process iPs+x where ion implantation is performed.However, at this time, the results from the inspection system CN are
+1, the nitrogen flow after ion implantation is 10
The heat treatment time is 35 minutes in the process of heat treatment at 00℃ for 30 minutes.
By performing thermal diffusion in the lateral direction of 0.1μ per minute, the effective channel length Leff is determined by the width of the polycrystalline silicon gate electrode being the median value, as shown in FIG. The heat treatment furnace system is automatically adjusted so that it is the same as in the case where the heat treatment furnace is used.As a result, fluctuations in the system for process PN have been compensated for by the system for process 8PN+x.

The above example corresponds to the flow shown in Figure 3, but the information from the inspection system CN is transmitted to process PN-1 at the same time and the etching equipment system is changed to make the ninth etching time a little longer. Good 1. If +A is adjusted and the etching calculation in the lateral direction is controlled so that L is equal to 2.0μ, this corresponds to the embodiment shown in FIG.

FIG. 8 is a book further schematically showing the above example.

That is, the flow of the wafers 80 is depicted as a cross-sectional view of a belt conveyor, and a control device is connected to the belt conveyor. This will be explained in conjunction with FIG. 5. In FIG. 8, a wafer 80 is sent from a machine to a polycrystalline silicon growth station 81 by a belt conveyor 81'. The computer MN-1 controls this polycrystalline silicon growth apparatus 81.
, and this=+y view p MN-1, which is connected to the parent computer RN-i. If necessary, this parent computer N-1 is further connected to a higher-level computer CPU. When polycrystalline silicon is grown, Ueno-80 is sent to the film quality inspection device CN-1, where the film thickness and
The layer resistance, grain size, etc. are checked and the values are sent to the parent computer RN-t, RN. It is processed whether the value deviates from the median value to the positive side or negative side, and whether the value of the deviation is within the standard, and countermeasures are given to the necessary control devices from the parent computer N-t and ILN. Ru. If it is within the specifications, the coating material 80 is sent to a resist coating device 82, and a resist solution is applied, for example, by rotation. Thereafter, the wafer is sent to a drying oven 83 at about 100.degree. C. and lightly baked for a certain period of time as a pretreatment.The wafer is then aligned with the mask pattern in an exposure device 84 and exposed to ultraviolet light.

Subsequently, the wafer 80 is developed in the developing equipment 85, and its appearance is checked in the visual inspection equipment CN'.
The resist is hardened in a firing furnace 86 at an ambient temperature of .degree.

After that, the wafer 80 is placed in the dry etcher 87,
After dry etching the polycrystalline silicon, it is sent to a plasma asher 88 to remove the resist film, and then transferred to the inspection equipment I.
Get checked by CN. During this time, the resist coating device 82
All of the devices from the plasma asher 88 to the plasma asher 88 are controlled by the computer MNI to the conbeater MNr.
These computers MNI to MN7 are parent computers 几N
If necessary, it is further connected to a higher-level computer CPN. The inspection device CN checks the dimensions, shape, etc. of the etched pattern of polycrystalline silicon, and information such as whether the values are within the specifications and whether the deviated values are positive or negative is sent to the parent and computers iLN and I(N+), respectively. 1. - The system sends the information to the upper computer CI'U and asks for the t'L instruction.After the above-mentioned appropriate instructions are given, the wafer within the specification is sent to the next ion implanter E+9, where it is 8-injected.
Based on the liver ion 111 jjl'lj! lj!
(It will be injected when the sale is made.

Above is the connection between the etching process and the II doping process. As a result, the production line will have a self-normalizing ability, and the quality of the finished product will be extremely uniform.Furthermore, as an embodiment of the present invention,
Then, the fluctuation in process PN is captured only in the next process PN+1 (
:l't, but the present invention is applicable not only to such a case, but also to the next process P.
N+1 or, if necessary, compensation by subsequent work [7].Furthermore, in the embodiment of the present invention, the results of the final inspection as indicated by "6" in FIGS. Although the route for requesting condition changes is omitted, it goes without saying that the function may be added if necessary.

[Brief explanation of the drawing]

Figures 1 and 2 are diagrams showing the manufacturing process of a typical conventional live conductor device for comparison with the present invention. FIGS. 5A and 5B are process diagrams illustrating the embodiments of the present invention in more detail, and corresponding cross-sectional views of semiconductor wafers, FIGS. 6 and 7, respectively. Figure 5 is a diagram of Shinagari and a wafer cross-sectional view of a part of the process to explain Figure 5 in more detail. It is a complete drawing. In the figure, 51.71...polycrystalline silicon, 52...regis) IIφ, 53...
Source, 54...Drain, 80...
Wafer, 81... Polycrystalline silicon 7 formation & equipment, 8
1'...Belt conveyor, 82...Resist coating device, 83...Drying oven, 84...
...Exposure device, 85...Development device 0.86.
・・・・・・Firing furnace, 87・・・Dry etcher, 88・・・Plasma asher-189・・・
...History of ion implantation equipment. Kokoko haiku yo Takuran Kenkyu (A) / Q) +234
54178, - , - N 1-Ha (in order of production) 7G pieces

Claims (2)

[Claims] (1) In a semiconductor device production equipment system, an inspection manufacturing CN with an automatic inspection function is introduced between the manufacturing equipment MN of a certain manufacturing process PN and the manufacturing equipment MN+s used in the next manufacturing process PN+1, and Set the median value and tolerance range of inspection items in the inspection manufacturing CN in advance, and if the inspection result is the median value, proceed to the manufacturing device MN+1 of the manufacturing process PN+1, and if the inspection result is positive (tll) from the median value. If it deviates from
If it is out of specification, it is considered a defective product and is not allowed to proceed to the next process 1'N+x manufacturing equipment MN+1, and if it is within the specifications, it is sent to the next process PN+1 manufacturing equipment @ MN + t or the subsequent process Pu+h<. The manufacturing equipment MN+M is instructed to perform processing to compensate for the deviation to the positive side, and if the inspection result deviates from the median value to the negative side, if it is out of specification, it is considered a defective product and sent to the next process P N + 1 manufacturing equipment 1yjN+
Do not proceed to step 1. If it is within the specifications, proceed to the next process PN+
1 manufacturing equipment MN+1 or subsequent process Ps+
A ball configured to instruct the manufacturing equipment MN and tM of u to take measures to compensate for the deviation to the negative side, and advance the product to the manufacturing equipment 7z2MN+t of the next process PN+1. Sisteno is a semiconductor device production system that has a patented feature of automatic integrated production of semiconductor devices. (2) In a production equipment system for semiconductor devices, there is
4 ('Introducing an inspection device CN with an automatic inspection function between the manufacturing device MN of the J manufacturing process PN and the manufacturing device MN + 1 of the next manufacturing process PrJ←1, and installing the inspection device C
rJ11 Set the median value and tolerance range 9B of the inspection items in advance, and if the inspection result is the median value, the process PN+ is the same as the product.
Proceed to manufacturing equipment MN+t for s, and inspect: If the result deviates from the median value to the positive side, if the value is outside the standard, it is determined to be a defective product and sent to manufacturing equipment τ for the next process PN+1. Do not proceed to MN+1, and if it is within the specifications, proceed to the next process P
Instruct the manufacturing device MN+1 of N+1 or the manufacturing device MN+M of the process PN+M of the process PN+yp to compensate for the deviation on the positive side) and the manufacturing device threshold I N of the process PN.
If the test result is negative (ill) from the median value, the value is negative, and if it is out of range, the product is considered defective and sent to the next process. PrJ+1 manufacturing equipment M, do not proceed to MN+1, and Q
The value is the standard (if it is within 3, the manufacturing equipment MN for the next process PN + 1)
+s or the subsequent process P N + h+ manufacturing equipment MN+M is instructed to compensate for the negative side deviation, and the manufacturing equipment MN+M of process PN +s or subsequent process is instructed to compensate for the deviation on the negative side.・For 4N, an instruction is issued to change to a + note that approaches the median value, and the product is configured to proceed to the next process, the manufacturing equipment Δ4N+1 for PN+1. A production equipment system for automatically integrated production of semiconductor devices.