JPS59228770A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS59228770A JPS59228770A JP58103797A JP10379783A JPS59228770A JP S59228770 A JPS59228770 A JP S59228770A JP 58103797 A JP58103797 A JP 58103797A JP 10379783 A JP10379783 A JP 10379783A JP S59228770 A JPS59228770 A JP S59228770A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- semiconductor device
- mesfet
- compound semiconductor
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000010354 integration Effects 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/801—FETs having heterojunction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/602—Heterojunction gate electrodes for FETs
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は化合物半導体による装置構造に係シ、とシわけ
電極構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a device structure using a compound semiconductor, and more particularly to a partitioned electrode structure.
従来、化合物半導体装置におけるＭＥＳ ＦＥＴ、Ｍ
工Ｓ ＦＥＴおよびＪ ＦＥＴのゲート電極は、金
、ＡＣ等の金属が用いられるのが通例であった。Conventionally, MES FET, M
It has been customary to use metals such as gold and AC for the gate electrodes of S FETs and J FETs.
しかし、上記従来技術による化合物半導体装置では、ゲ
ート電極巾や電極間隔が微小化できず、高速化や高集積
化必ずしも適していないとじう欠点があった。However, the compound semiconductor device according to the above-mentioned conventional technology has the drawback that the gate electrode width and the electrode spacing cannot be miniaturized, and the device is not necessarily suitable for high speed and high integration.
本発明は、かかる従来技術の欠点をなくシ、微小な電極
巾や電極間隔を可能とし、高速化及び高集積化に向いた
化合物半導体装置の電極構造を提供することを目的とす
る。SUMMARY OF THE INVENTION It is an object of the present invention to provide an electrode structure for a compound semiconductor device that eliminates the drawbacks of the prior art, enables minute electrode widths and electrode spacing, and is suitable for higher speed and higher integration.
上記目的を達成するための本発明の基本的な構成は、半
導体装置において、化合物半導体表面に形成されるＭＥ
Ｓ ＦＥＴ、Ｍ工Ｓ ＦＥＴあるいはＪ−ＦＥＴの
少なくともゲート電極がシリコンで形成されることを特
徴とすること、及び前記シリコン・ゲート電極の少なく
とも側面を含む表面が酸化膜で被覆されて成る事を特徴
とする。The basic structure of the present invention for achieving the above object is that in a semiconductor device, ME formed on the surface of a compound semiconductor
At least the gate electrode of the S FET, M S FET, or J-FET is formed of silicon, and the surface including at least the side surfaces of the silicon gate electrode is coated with an oxide film. Features.
以下、笑施例により本発明を詳述する。Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示すＭＥＳ ＦＥＴの要
部の断面図である。ｓ７基板１の表面に形成されたフィ
ールド酸化膜２に囲まれた領域に形成された工ｎｐエピ
タキシャル膜３には、ソース領域４．ドレイン領域５に
挾まれてｓ７ゲート電極６が形成され、該ｓｉゲグー電
極６の表面には酸化膜７が形成され、ソース電極４１．
ドレイン電極５１がゲート電極６と酸化膜を挾んでオー
バー−ヲツブされて成る。FIG. 1 is a sectional view of a main part of a MES FET showing an embodiment of the present invention. A source region 4. An S7 gate electrode 6 is formed between the drain regions 5, an oxide film 7 is formed on the surface of the S7 gate electrode 6, and a source electrode 41.
A drain electrode 51 is formed by over-waving the gate electrode 6 and the oxide film between them.
上記の如く、ゲート電極等の電極をｓｉで形成すること
によＪ、８７の微細加工が他の金属よシ容易なことから
、高集積化が出来、かつ、高速化に向いた半導体装置と
することができる効果がある。As mentioned above, by forming electrodes such as gate electrodes with Si, microfabrication of J, 87 is easier than with other metals, making it possible to achieve high integration and make semiconductor devices suitable for higher speeds. There is an effect that can be done.
本発明は化合物半導体によるＭＰＳ ＦＥＴのみなら
ず、Ｍ工Ｓ ＦＥｉＴ、およびＪ−ＦＥＴに用いるこ
とができる。The present invention can be used not only for MPS FETs using compound semiconductors, but also for MPS FEiTs and J-FETs.
第１図は本発明の一実施例を示す化合物半導体によるＭ
ＥＳ ＦＦ１Ｔの要部の断面図である。
１・・ＳＺ基板、２・・フィールド酸化膜３ ＠ 、
ＩｎＰエピタキシャル膜
４ｅ・ソース領域 ５・・ドレイン領域６・ｌｌＳｉゲ
ート ７・・酸化膜
４１・・ソース電極 ５１・・ドレイン電極以
上
出願人 株式会社諏訪精工舎
代理人 弁理士量 上 務FIG. 1 shows an M formed by a compound semiconductor showing one embodiment of the present invention.
It is a sectional view of the main part of ES FF1T. 1...SZ substrate, 2...Field oxide film 3 @,
InP epitaxial film 4e, source region 5, drain region 6, 11Si gate 7, oxide film 41, source electrode 51, drain electrode and beyond
Upper applicant Suwa Seikosha Co., Ltd. Agent Patent attorney amount Upper affairs
Claims (1)
工Ｓ ＦＥＴある騒はＪ−ＦＥＴ（接合型ＦＥＴ）の
少なくともゲート電極がシリコンで形成されて成ること
を特徴とする半導体装置。 ２、シリコン・ゲート電極の少なくとも側面を含む表面
が酸化膜で被ωされて成る事を特徴とする特許請求の範
囲比１項記載の半導体装置。[Claims] 1. MES, FET, M formed on the surface of a compound semiconductor
S-FET is a semiconductor device characterized in that at least the gate electrode of a J-FET (junction type FET) is made of silicon. 2. The semiconductor device according to claim 1, wherein the surface of the silicon gate electrode, including at least the side surfaces thereof, is coated with an oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58103797A JPS59228770A (en) | 1983-06-10 | 1983-06-10 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58103797A JPS59228770A (en) | 1983-06-10 | 1983-06-10 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59228770A true JPS59228770A (en) | 1984-12-22 |
Family
ID=14363383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58103797A Pending JPS59228770A (en) | 1983-06-10 | 1983-06-10 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59228770A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60261177A (en) * | 1984-06-08 | 1985-12-24 | Agency Of Ind Science & Technol | Compound semiconductor field effect transistor |
| EP1643645A1 (en) * | 2004-09-30 | 2006-04-05 | Fujitsu Limited | Rectifier circuit |
-
1983
- 1983-06-10 JP JP58103797A patent/JPS59228770A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60261177A (en) * | 1984-06-08 | 1985-12-24 | Agency Of Ind Science & Technol | Compound semiconductor field effect transistor |
| EP1643645A1 (en) * | 2004-09-30 | 2006-04-05 | Fujitsu Limited | Rectifier circuit |
| US7732945B2 (en) | 2004-09-30 | 2010-06-08 | Fujitsu Limited | Rectifier circuit |
| EP1643645B1 (en) * | 2004-09-30 | 2017-08-30 | Fujitsu Limited | Rectifier circuit |
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