JPS5922189B2 - Photo micro sensor - Google Patents
Photo micro sensorInfo
- Publication number
- JPS5922189B2 JPS5922189B2 JP51066985A JP6698576A JPS5922189B2 JP S5922189 B2 JPS5922189 B2 JP S5922189B2 JP 51066985 A JP51066985 A JP 51066985A JP 6698576 A JP6698576 A JP 6698576A JP S5922189 B2 JPS5922189 B2 JP S5922189B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving element
- emitting element
- slit
- sensor case
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/255—Details, e.g. use of specially adapted sources, lighting or optical systems
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Geophysics And Detection Of Objects (AREA)
Description
【発明の詳細な説明】
この発明は遮光形、反射形のフォトマイクロセンサに関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a light shielding type and reflective type photomicrosensor.
フォトマイクロセンサは発光素子と受光素子をケース内
に組み込んで被検知物を光学的に検知するものであり、
発光素子からの光は非透光性センサケースに形成された
透光窓を通って受光素子に照射され、被検知物による遮
光もしくは反射光を受光素子で検出して被検知物の検知
を行なうものである。A photomicrosensor is a device that optically detects an object by incorporating a light-emitting element and a light-receiving element inside a case.
Light from the light-emitting element passes through a light-transmitting window formed in the non-light-transmitting sensor case and is irradiated onto the light-receiving element, and the light-receiving element detects the light blocked or reflected by the object to be detected, thereby detecting the object. It is something.
ところで、従来のフォトマイクロセンサはケース内に組
みこまれた発光素子と受光素子が各々別な部材に固定さ
れていたため、画素子をケース内に組み込んだ後再調整
が必要であった。By the way, in the conventional photomicrosensor, the light emitting element and the light receiving element incorporated into the case were each fixed to separate members, so readjustment was required after the pixel element was incorporated into the case.
さらに、発光素子と受光素子の前面にスリットを有する
フォトマイクロセンサにおいても、両スリットが態別に
形成されていたので対向する両スリットの位置ずれが生
じたり、また素子の設定に際しても、スリットと素子と
の位置決めにバラツキが生じたりするため正確な受光状
態を得るために調整を必要とする欠点があった。Furthermore, even in photomicrosensors that have slits in front of the light-emitting element and the light-receiving element, both slits are formed separately, resulting in misalignment of the opposing slits. This has the drawback of requiring adjustment in order to obtain accurate light receiving conditions due to variations in positioning.
また前記透光窓は透光性樹脂を貼着していたから密閉度
が低下するとともに隙間にほこり等が付着する欠点があ
った。Further, since the light-transmitting window was pasted with a light-transmitting resin, there was a drawback that the degree of sealing was lowered and dust etc. could adhere to the gap.
この発明は上記欠点を改善するために、発光素子と受光
素子を嵌着した非透光性樹脂で形成された基台にスリッ
トを有した遮光壁を一体成形し、前記基台を透光窓を有
したセンサケースに内嵌することによって、対向する両
スリットおよびスリットと素子の位置精度のすぐれた、
密閉度の高くかつ組立てがきわめて容易なフォトマイク
ロセンサを提供することを目的とする。In order to improve the above-mentioned drawbacks, this invention integrally molds a light-shielding wall having slits on a base made of non-transparent resin into which a light-emitting element and a light-receiving element are fitted, and the base is connected to a light-transmitting window. By fitting into a sensor case with
It is an object of the present invention to provide a photomicrosensor that has a high degree of airtightness and is extremely easy to assemble.
以下、この発明の実施例を図面にしたがって説明する。Embodiments of the present invention will be described below with reference to the drawings.
第１図、第２図において、１１は非透光性センサケース
１２に発光素子１３と受光素子１４とをリード端子１５
．１６に設定した遮光形のフォトマイクロセンサで、素
子１３．１４は集光レンズ部１７．１８をもった透光性
樹脂体１９．２０でモールドされ、その各対向面におけ
るセンサケース１２には窓面積の広い透光窓２１．２２
が透光性樹脂で二段成型等の方法でケース１２と一体に
形成されている。In FIGS. 1 and 2, reference numeral 11 indicates a lead terminal 15 for connecting a light emitting element 13 and a light receiving element 14 to a non-transparent sensor case 12.
．． 16, the elements 13 and 14 are molded with a translucent resin body 19 and 20 having condensing lens parts 17 and 18, and the sensor case 12 on each opposing surface is provided with a window. Large area translucent window 21.22
is formed integrally with the case 12 using a method such as two-stage molding using a translucent resin.
２３は素子１３．１４を装着した非透光性合成樹脂から
なる基台で、この基台２３には各素子１３．１４に対向
配設されてスリット２４．２５を中央部にもった遮光壁
２６゜２７が一体に突設され、かつ上記センサケース１
２が嵌着されている。Reference numeral 23 denotes a base made of non-transparent synthetic resin on which elements 13.14 are mounted, and on this base 23 there is a light-shielding wall arranged opposite to each element 13.14 and having a slit 24.25 in the center. 26° 27 are integrally protruded, and the sensor case 1
2 is fitted.
上記構成において、発光素子１３からの光２８は集光レ
ンズ部１７で集光されたのち、スリット２４．２５を通
って集光レンズ部１８で集光されて受光素子１４に照射
される。In the above configuration, the light 28 from the light emitting element 13 is focused by the condenser lens section 17, passes through the slits 24 and 25, is condensed by the condenser lens section 18, and is irradiated onto the light receiving element 14.
いま、このような光の照射状態において、線材のような
被検知物２９が存在すると、スリット２４で絞られた光
２９が被検知物２９によって遮光されるから、受光素子
１４に照射される光量は極度に減衰し、検知分解能を向
上させることができる。Now, in such a light irradiation state, if there is a detected object 29 such as a wire, the light 29 focused by the slit 24 is blocked by the detected object 29, so the amount of light irradiated to the light receiving element 14 is reduced. is extremely attenuated, which can improve detection resolution.
また、スリンｌ−２４，２５は基台２３に突設した遮光
壁２６゜２１に形成することにより、容易に製造するこ
とができ、また、基台２３と一体にされていることによ
り、基台２３をケース１１に嵌合した際、スリット２４
．２５は各素子１３．１４に対向配設されてその組立も
容易になされる。In addition, the sulins 1-24 and 25 can be easily manufactured by forming them on the light shielding walls 26° 21 protruding from the base 23, and since they are integrated with the base 23, they can be easily manufactured. When the stand 23 is fitted to the case 11, the slit 24
．． 25 is disposed opposite each element 13, 14, and assembly thereof is facilitated.
この発明によれば、発光素子と受光素子を嵌着する非透
光性基台とスリットを有した遮光壁とを一体成形してい
るので、対向する両スリットおよびスリットと素子の位
置精度を高めることができ、位置調整を必要としないと
ともに位置精度のバラツキによる不良を少なくすること
ができる。According to this invention, since the non-light-transmitting base on which the light-emitting element and the light-receiving element are fitted and the light-shielding wall having the slit are integrally molded, the positional accuracy of both the opposing slits and the slit and the element is improved. This eliminates the need for positional adjustment and reduces defects due to variations in positional accuracy.
また、画素子の受光状態が正確に設定された基台を透光
窓を有したセンサケースに内嵌するだけでよいので組立
てがきわめて容易であるとともに、密閉度のよいフォト
マイクロセンサが得られる。In addition, assembly is extremely easy as it is only necessary to fit the base, on which the light reception state of the pixel element is accurately set, into a sensor case with a light-transmitting window, and a photomicrosensor with good airtightness can be obtained. .
第１図はこの発明に係るフォトマイクロセンサの一例を
示す断面図、第２図は第１図のＨ−■線断面図。
１２・・−・・・非透光性センサケース、１３・・・・
・１発光素子、１４・・・・・・受光素子、２１．２２
・・・・・・透光窓、２３・・・・・・非透光性基台、
２４．２５・・・・・・スリット、２６．２７・・・・
・・遮光壁。FIG. 1 is a sectional view showing an example of a photomicrosensor according to the present invention, and FIG. 2 is a sectional view taken along the line H-■ in FIG. 1. 12...Non-transparent sensor case, 13...
・1 light emitting element, 14... light receiving element, 21.22
...translucent window, 23... non-transparent base,
24.25...Slit, 26.27...
...shading wall.
Claims (1)
それ以外は非透光性樹脂で一体に形成されたセンサケー
スに発光素子と受光素子を設定し、これら素子の前面に
スリットを設け、このスリットを介し光の送受がなされ
るようにしたフォトマイクロセンサにおいて、前記スリ
ットは、前記センサケースに内嵌されてかつ発光素子と
受光素子を嵌着した非透光性基台に一体成形により突設
された遮光壁の中央部に形成されたことを特徴とするフ
ォトマイクロセンサ。1 The front surface of the setting part for the light emitting element and light receiving element is made of translucent resin.
Other than that, a light-emitting element and a light-receiving element are set in a sensor case that is integrally formed with non-transparent resin, and a slit is provided in front of these elements, and light is transmitted and received through this slit. In the sensor, the slit is formed in the center of a light-shielding wall that is fitted into the sensor case and protrudes integrally from a non-light-transmitting base on which a light-emitting element and a light-receiving element are fitted. Features of photomicrosensors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51066985A JPS5922189B2 (en) | 1976-06-07 | 1976-06-07 | Photo micro sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51066985A JPS5922189B2 (en) | 1976-06-07 | 1976-06-07 | Photo micro sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52150088A JPS52150088A (en) | 1977-12-13 |
| JPS5922189B2 true JPS5922189B2 (en) | 1984-05-24 |
Family
ID=13331807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51066985A Expired JPS5922189B2 (en) | 1976-06-07 | 1976-06-07 | Photo micro sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5922189B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5826232A (en) * | 1981-08-10 | 1983-02-16 | Matsushita Electric Ind Co Ltd | Photosensor |
| JPH0616118B2 (en) * | 1985-03-06 | 1994-03-02 | コニカ株式会社 | Hall detector for photo formation |
| JPH0421114Y2 (en) * | 1985-03-30 | 1992-05-14 |
-
1976
- 1976-06-07 JP JP51066985A patent/JPS5922189B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52150088A (en) | 1977-12-13 |
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