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JPS59188221A - Preventing method of aging change in resonance frequency of piezoelectric device - Google Patents

Preventing method of aging change in resonance frequency of piezoelectric device

Info

Publication number
JPS59188221A
JPS59188221A JP6265383A JP6265383A JPS59188221A JP S59188221 A JPS59188221 A JP S59188221A JP 6265383 A JP6265383 A JP 6265383A JP 6265383 A JP6265383 A JP 6265383A JP S59188221 A JPS59188221 A JP S59188221A
Authority
JP
Japan
Prior art keywords
resonance frequency
piezoelectric substrate
magnesium fluoride
electrode
piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6265383A
Other languages
Japanese (ja)
Inventor
Masaki Tanaka
田中 昌喜
Takefumi Kurosaki
黒崎 武文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP6265383A priority Critical patent/JPS59188221A/en
Publication of JPS59188221A publication Critical patent/JPS59188221A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02929Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To prevent the aging change in resonance frequency by vapor-depositing magnesium fluoride on the interdigital transducer electrode of a piezoelectric device or sticking surface between it and a reflector. CONSTITUTION:The interdigital transducer (IDT) electrode 2 is stuck to the surface of a piezoelectric substrate 1. Then, magnesium fluoride 9 is vapor- deposited on the IDT electrode 2 or the surface of the piezoelectric substrate where the reflector 3 is stuck to specific thickness. Therefore, the inclination of a decrease in resonance frequency considered as results from the condensation of an adhesive for fixing the piezoelectric substrate to a holder is canceled by the inclination of an increase in resonance frequency due to an aging change of vapor deposited magnesium fluoride.

Description

【発明の詳細な説明】 本発明は弾性表面波(以下SAWと称する)、すぺ9波
(以下BSWと称する)等をオU用した圧電デバイスの
共振周波数の経時的質イしを防止する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention prevents the resonant frequency of a piezoelectric device using surface acoustic waves (hereinafter referred to as SAW), space waves (hereinafter referred to as BSW), etc. from deteriorating over time. Regarding the method.

従来からSAW共振器の如く圧′亀基板表面にインタデ
ィジタル・トランスジューサ電極(以下IDT電極と称
する)を付着し、これに交流電界全印加することによっ
て前記基板表面或はバルク内に励起した波動を利用する
圧電デバイスの共振周波数は一般に負の経時変化特性を
示す。この理由は明らかでにないが圧電基板全保持器に
固定する為の接着剤の溶剤が前記圧電基板表面に付着す
ること及び前記接着剤の凝縮に伴い圧電基板が り返え
りIDT電極指間隔を拡大することの複合的効果による
ものでないかと想像される。
Conventionally, as in a SAW resonator, an interdigital transducer electrode (hereinafter referred to as an IDT electrode) is attached to the surface of a pressure-sensitive substrate, and by applying a full alternating current electric field to this, the waves excited within the substrate surface or bulk are generated. The resonant frequency of the piezoelectric device used generally exhibits negative aging characteristics. The reason for this is not clear, but the solvent of the adhesive for fixing the entire piezoelectric substrate to the holder adheres to the surface of the piezoelectric substrate, and as the adhesive condenses, the piezoelectric substrate bends and reduces the IDT electrode finger spacing. It is thought that this is due to the combined effects of expansion.

不発明は上述する如き従来のSAW$振器等振器等ID
圧電極て励起する波@全利用した圧電デバイスの問題点
に鑑みてなされたものであって、圧電デバイスのIDT
電極或はこれと反射器との付着面に弗化マグネシウム全
蒸着することによって共振周波数の経時変化を前記蒸着
物質の経時変化によってキャンセルする圧電デバイス共
振周波数の経時変化防止7j法を提供することを目的と
する。
The non-invention is the conventional SAW dollar vibrator, etc. ID as mentioned above.
This was done in view of the problems of piezoelectric devices that utilize waves excited by piezoelectric electrodes, and the IDT of piezoelectric devices
It is an object of the present invention to provide a method for preventing changes in resonance frequency over time of a piezoelectric device 7j, in which changes in resonance frequency over time are canceled by changes in the resonant frequency over time by completely depositing magnesium fluoride on an electrode or the attachment surface of the electrode and a reflector. purpose.

以下、本発明を実施例に基づいて詳細に説明する。Hereinafter, the present invention will be explained in detail based on examples.

第1図は本発明全適用すべきSAW共振器の一例を示す
図である。
FIG. 1 is a diagram showing an example of a SAW resonator to which the present invention is fully applied.

即ち、水晶等圧電基板1上に所定の対数と厚さのアルミ
ニウムよりT電極2及びその両側に反射器3,3金蓋着
及びエツチングによって形成しこれを第2図に示す如き
保持器中に収納する。保持器はベース4と封止蓋5とに
よって構成し、前記SAW共振器の圧電基板1を前記ベ
ース4上に接着剤6によって固定すると共にそのIDT
電極と前記ベース4をガラス7にて気密貫通し且電気的
にベースから絶縁したリード線8.8とを結合したもの
である。
That is, a T-electrode 2 of a predetermined logarithm and thickness is formed from aluminum on a quartz iso-piezoelectric substrate 1, and reflectors 3, 3 are formed on both sides thereof by gold capping and etching, and this is placed in a cage as shown in FIG. Store it. The holder is composed of a base 4 and a sealing lid 5, and the piezoelectric substrate 1 of the SAW resonator is fixed onto the base 4 with an adhesive 6, and its IDT
The electrode is coupled to a lead wire 8.8 which hermetically passes through the base 4 with a glass 7 and is electrically insulated from the base.

このように構成したSAW共振器の共振周波数は時間の
経過と共に低下し、例えば第3図に示す如<280MH
2のSAW共振器に於いては1デイケイド当ジ既ね20
ppmf化しその変化の傾向は指数関数曲線に従う。
The resonant frequency of the SAW resonator configured in this way decreases over time, and for example, as shown in FIG.
In the second SAW resonator, the number of units per day is already 20.
ppmf and its change trend follows an exponential curve.

このような経時変化の原因が接着剤の溶剤の圧電基板表
面への付着及び接着剤の凝縮による圧電基板の歪による
ものであろうことは前述のとうりである。
As mentioned above, the cause of such a change over time is probably due to the adhesion of the adhesive solvent to the surface of the piezoelectric substrate and the distortion of the piezoelectric substrate due to the condensation of the adhesive.

そこでこの問題?解決する為本発明に於いては前記圧電
基板1のIDT電極2及び反射器3.3付着面に適当な
マスクを介して弗化マグネシウム被膜9會適歌蒸着する
So this problem? To solve this problem, in the present invention, a magnesium fluoride film 9 is deposited on the surface of the piezoelectric substrate 1 to which the IDT electrode 2 and the reflector 3,3 are attached through a suitable mask.

弗化マグネシウム(b4gFz)の蒸着量は蒸着膜厚を
直接測定しつつ制御することは困難であるから蒸着時の
共撮周波数f勅を観測しつつ行うのが簡単且確実でろる
Since it is difficult to control the amount of magnesium fluoride (b4gFz) evaporated while directly measuring the thickness of the evaporated film, it is easy and reliable to control it while observing the synchronized frequency f during evaporation.

第5図は第3図に示した経時特性を有する水晶SAW#
振器に初期共振周波数変化量△f/f’I3ooppm
及び1,000ppm与えるだけの弗化マグネシウムを
蒸着した場合の夫々の共振周波数経時変化を調べた実験
結朱全示す図である。
Figure 5 shows a crystal SAW# having the aging characteristics shown in Figure 3.
Initial resonance frequency change amount △f/f'I3ooppm in the vibrator
FIG. 4 is a diagram showing the results of an experiment in which changes in resonance frequency over time were investigated when magnesium fluoride was deposited in amounts of 1,000 ppm and 1,000 ppm.

本図から明らかな如く弗化マグネンウム蒸着量が適正量
を越えると共振周波数の経時特性は逆に正となることが
判る。
As is clear from this figure, when the amount of deposited magnesium fluoride exceeds the appropriate amount, the time-dependent characteristic of the resonance frequency becomes positive.

このような効果の生ずる理由を考察するに、一般にID
T ′電極全付着した圧電基板表面に金属、非金属を問
わず蒸着被膜を付着すればマス・ローディング効果によ
って共振周波数は低下するが、バルク波伝播速度の極め
て小さな物質全付着してもマス・ローディングとは別の
理由によって圧電基板表面近傍を伝播する波動の速度は
低下するものの如くでありこの物質が経時的変化によっ
てバルク波伝播速度の高い物質に変7化すると前記圧電
基板表面近傍全伝播する波動の速度を上昇させることが
判る。
When considering the reason for this effect, it is generally found that ID
If a vapor-deposited film, whether metal or non-metal, is attached to the surface of the piezoelectric substrate on which all the T' electrodes are attached, the resonant frequency will be lowered due to the mass loading effect, but even if all the substances with extremely low bulk wave propagation speed are attached, the mass loading will be reduced. It seems that the speed of waves propagating near the surface of the piezoelectric substrate decreases due to reasons other than loading, and when this material changes over time to a material with a high bulk wave propagation speed, the entire wave propagates near the surface of the piezoelectric substrate. It can be seen that this increases the speed of the waves.

即ち、弗化マグネシウムの蒸着膜は当初アモルファスの
状態にありその充填率は低く時間の経過に伴い再結晶し
て充填率が高くなることが知られているが、弗化マグネ
シウムはその充填率が低い場合には音速は低く再結晶に
より充填率が高まると音速は高くなるのでIDT fi
他極間音速の犬なる物質が付着すれば基板表面或はその
直下全伝播する波動の速度も犬となり共振周波数が上昇
するものであろうと考えられる。
In other words, it is known that the vapor-deposited film of magnesium fluoride is initially in an amorphous state and its filling rate is low and that it recrystallizes over time and the filling rate increases, but magnesium fluoride has a low filling rate. If it is low, the sound speed is low and as the filling rate increases due to recrystallization, the sound speed increases, so IDT fi
It is thought that if a substance with a sonic velocity between the other poles is attached, the velocity of the waves propagating all over the substrate surface or just below it will also be the same, and the resonance frequency will increase.

従りて弗化マグネシウム蒸着量は各共振器の経時特性を
実験的に把握した上で決定する必要があることはいうま
でもないがこれは同一の加工々程を経て量産する共振器
に対してバッチ処理することが可能でちる。
Therefore, it goes without saying that the amount of magnesium fluoride deposited must be determined after experimentally understanding the aging characteristics of each resonator, but this is not the case for resonators that are mass-produced through the same processing steps. It is possible to perform batch processing.

伺、弗化マグネシウムを蒸着した結果共′@器のQが幾
分低下するがその低下の程度は$6図に示すとうり適正
な蒸着量に対し高々数多でろって格別の問題は生じない
However, as a result of vapor depositing magnesium fluoride, the Q of the device decreases somewhat, but the degree of decrease is at most a large number compared to the appropriate amount of vapor deposition, as shown in Figure 6, and no particular problem arises. do not have.

本発明は以上説明した如き方法を使用するものであるか
ら極めて簡単かつ確実にIDTl1極によって圧電基板
表面或は内部に励起する波動を利用したSA込′共撮器
、フィルタ等の圧電デバイスの共振周波数の経時変化?
防止することが可能となるので圧電デバイスの特性を長
期間に亘って保障する上で著しい効果を発揮する。
Since the present invention uses the method described above, it is extremely easy and reliable to achieve resonance in piezoelectric devices such as SA-included camera cameras, filters, etc. using the waves excited on the surface or inside of the piezoelectric substrate by one pole of the IDT1. Change in frequency over time?
Since it is possible to prevent this, it is extremely effective in ensuring the characteristics of the piezoelectric device over a long period of time.

同、本発明は必ずしも実施例に示す如(II)T電極及
び反射器の全面に弗化マグネシウム全蒸着する必要はな
く部分的に蒸着してもよい。
Similarly, in the present invention, magnesium fluoride does not necessarily have to be entirely deposited on the entire surface of the (II) T electrode and reflector as shown in the embodiment, but may be partially deposited.

又、本発明に係る方法はSAWデバイスにのみ限定する
必要はな(IDT電極によって圧電基板内にバルク波を
励起するタイプのデバイス一般に適用可能である。
Furthermore, the method according to the present invention need not be limited to SAW devices only (it is applicable to any type of device in which bulk waves are excited in a piezoelectric substrate by an IDT electrode).

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明を適用すべきSAW共振器の構造全売す
図、第2図は第1図のSAW共振器を保持器に収納した
状態?示す断面図、第3図はその共振周波数の経時変化
を示す実験データの図、第4図は第1図に示すSAW共
振器に弗化マグネシウムを蒸着した状態金示す図、第5
図及び第6図は夫々弗化マグネシウム蒸着量と共振周波
数及び共振器のQの変化量との関係を示す実験データの
図である。 1・・・・・・・・・圧電基板、 2・・・・・・・・
・インタディジタル・トランスジー−サ電極、 3・・
・・・・・・反射器。 9・・・・・・・・・弗化マグネシウム蒸着膜特許出願
人  東洋通信機株式会社 ¥ 1図 P  2  ω に  3  fiJ Aり ρ 茅 、/  Ii
Figure 1 shows the structure of a SAW resonator to which the present invention is applied, and Figure 2 shows the SAW resonator shown in Figure 1 housed in a holder. 3 is a diagram of experimental data showing the change in resonance frequency over time. FIG. 4 is a diagram showing the state of gold deposited on the SAW resonator shown in FIG.
6 and 6 are diagrams of experimental data showing the relationship between the amount of magnesium fluoride vapor deposited and the amount of change in the resonant frequency and Q of the resonator, respectively. 1...Piezoelectric substrate, 2...
・Interdigital transducer electrode, 3...
...Reflector. 9...Magnesium fluoride vapor deposited film patent applicant Toyo Tsushinki Co., Ltd. 1 Figure P 2 ω 3 fiJ Ariρ Kaya, / Ii

Claims (1)

【特許請求の範囲】[Claims] 圧電基板表面にインタディジタル・トランスジューサ電
極を付着しこれに印カロする交流電界に工って前記基板
表面或はそのノくルク内に励起した波動を利用する圧電
デノ(イスに於いて、前記インタディジタル・トランス
ジューサ電極或はこれと反射器と全付着した圧電基板表
面に弗化々グネシウムを所定の厚さだけ蒸着すること全
特徴とする圧電デノくイス共振周波数の経時変化防止方
法。
In a piezoelectric device, an interdigital transducer electrode is attached to the surface of a piezoelectric substrate, and an alternating current electric field is applied to the electrode. A method for preventing changes in the resonant frequency of a piezoelectric chair over time, which is characterized by depositing a predetermined thickness of magnesium fluoride on the surface of the piezoelectric substrate to which the interdigital transducer electrode or the reflector are attached.
JP6265383A 1983-04-08 1983-04-08 Preventing method of aging change in resonance frequency of piezoelectric device Pending JPS59188221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6265383A JPS59188221A (en) 1983-04-08 1983-04-08 Preventing method of aging change in resonance frequency of piezoelectric device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6265383A JPS59188221A (en) 1983-04-08 1983-04-08 Preventing method of aging change in resonance frequency of piezoelectric device

Publications (1)

Publication Number Publication Date
JPS59188221A true JPS59188221A (en) 1984-10-25

Family

ID=13206493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6265383A Pending JPS59188221A (en) 1983-04-08 1983-04-08 Preventing method of aging change in resonance frequency of piezoelectric device

Country Status (1)

Country Link
JP (1) JPS59188221A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61191624U (en) * 1985-05-20 1986-11-28

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55110418A (en) * 1979-02-20 1980-08-25 Victor Co Of Japan Ltd Surface acoustic wave device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55110418A (en) * 1979-02-20 1980-08-25 Victor Co Of Japan Ltd Surface acoustic wave device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61191624U (en) * 1985-05-20 1986-11-28

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