JPS59174714U - Microwave low noise semiconductor device - Google Patents
Microwave low noise semiconductor deviceInfo
- Publication number
- JPS59174714U JPS59174714U JP6881283U JP6881283U JPS59174714U JP S59174714 U JPS59174714 U JP S59174714U JP 6881283 U JP6881283 U JP 6881283U JP 6881283 U JP6881283 U JP 6881283U JP S59174714 U JPS59174714 U JP S59174714U
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- semiconductor device
- low noise
- microwave low
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 230000005669 field effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Microwave Amplifiers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案の一実施例であるところのマイクロ波低
雑ＧａＡｓ電界効果トランジスタ増幅器を説明するため
の平面図である。第２図は第１図実施例の回路及びパッ
ケージの構成をブロック図により示したものである。第
３図は本実施例の他の実施例であるところのマイクロ波
低雑音ＧａＡｓ電界効果トランジスタ増幅器の回路及び
パッケージの構成をブロック図により示したものである
。
図において、１及び２１はマイクロ波低雑音ＧａＡｓ電
界効果トランジスタ・チップ、２． ２２゜５２及び５
３はパッケージ、４及び２４はそれぞれ前記トランジス
タ・チップ１及び２１の入力インピーダンス整合回路、
５及び２５は出力インピーダンス整合回路、１３及び３
３はＧａＡｓ電界効電界効果トランジスタ２器増ＧａＡ
ｓモノリシック集積回路チップ、３４及び３５はＧａＡ
ｓモノリシック集積回路を構成するＧａＡｓ電界効果ト
ランジスタ、４０．４１及び４２はそれぞれＧａＡｓモ
ノリシック集積回路を構成する入力、段間及び出力イン
ピーダンス整合回路を示す。FIG. 1 is a plan view for explaining a microwave low noise GaAs field effect transistor amplifier which is an embodiment of the present invention. FIG. 2 is a block diagram showing the structure of the circuit and package of the embodiment shown in FIG. FIG. 3 is a block diagram showing the circuit and package configuration of a microwave low noise GaAs field effect transistor amplifier, which is another embodiment of this embodiment. In the figure, 1 and 21 are microwave low noise GaAs field effect transistor chips; 2. 22°52 and 5
3 is a package; 4 and 24 are input impedance matching circuits for the transistor chips 1 and 21, respectively;
5 and 25 are output impedance matching circuits, 13 and 3
3 is GaAs field effect field effect transistor double GaAs
s monolithic integrated circuit chip, 34 and 35 are GaA
s GaAs field effect transistors forming the monolithic integrated circuit; 40, 41 and 42 indicate input, interstage and output impedance matching circuits forming the GaAs monolithic integrated circuit, respectively;
Claims (1)
音トランジスタのチップに直接インピーダンス整合回路
を設けて構成され、該入力段低雑音増幅回路に縦続接続
されたマイクロ波回路がモノリシック集積回路により構
成されてなることを特徴とするマイクロ波低雑音半導体
装置。A microwave input stage low-noise amplifier circuit is constructed by providing an impedance matching circuit directly on a chip of individual microwave low-noise transistors, and a microwave circuit cascade-connected to the input stage low-noise amplifier circuit is constructed from a monolithic integrated circuit. A microwave low noise semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6881283U JPS59174714U (en) | 1983-05-09 | 1983-05-09 | Microwave low noise semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6881283U JPS59174714U (en) | 1983-05-09 | 1983-05-09 | Microwave low noise semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59174714U true JPS59174714U (en) | 1984-11-21 |
| JPH0145154Y2 JPH0145154Y2 (en) | 1989-12-27 |
Family
ID=30198982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6881283U Granted JPS59174714U (en) | 1983-05-09 | 1983-05-09 | Microwave low noise semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59174714U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53117360A (en) * | 1977-03-23 | 1978-10-13 | Fujitsu Ltd | Transistor amplifier of waveguide type |
| JPS5652489A (en) * | 1979-10-05 | 1981-05-11 | Laurel Bank Machine Co | Holeecoin damage detector |
| JPS5884510A (en) * | 1981-10-29 | 1983-05-20 | ワトキンズ・ジヨンソン・コムパニ− | Rf amplifying circuit using fet device |
-
1983
- 1983-05-09 JP JP6881283U patent/JPS59174714U/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53117360A (en) * | 1977-03-23 | 1978-10-13 | Fujitsu Ltd | Transistor amplifier of waveguide type |
| JPS5652489A (en) * | 1979-10-05 | 1981-05-11 | Laurel Bank Machine Co | Holeecoin damage detector |
| JPS5884510A (en) * | 1981-10-29 | 1983-05-20 | ワトキンズ・ジヨンソン・コムパニ− | Rf amplifying circuit using fet device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0145154Y2 (en) | 1989-12-27 |
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