JPS59174549A - Method for joining metal and glass - Google Patents

Abstract

PURPOSE:To join firmly and airtightly metal and glass at a relatively low temp. while maintaining the accuracy in the thickness direction by forming an amorphous silicon film on a metallic material, placing glass on the surface of the film, and carrying out anodic joining. CONSTITUTION:An amorphous silicon film 2 is formed on the surface of a metallic plate 1 of stainless steel, aluminum, copper or the like by glow discharge, CVD or other method so as to provide high adhesive strength. A glass plate 3 is placed on the film 2, and voltage is applied between the plates 1, 3 under pressure to carry out anodic joining. Firm joining can be carried out at a relatively low temp. such as about 400 deg.C, and the thickness of the film 2 can be controlled with about 0.1-1mum accuracy, so the joining can be carried out while maintaining the accuracy in the thickness direction.

Description

Detailed Description of the Invention: a. Industrial Application Field The present invention is directed to a method of bonding gold and glass in a strong and airtight manner at a relatively low temperature while precisely maintaining accuracy in the thickness direction. .

b. Conventional Example A method for strongly and airtightly bonding metal and glass is to use copal glass or soft gas (low corrosion point glass) for the glass, and to bond the glass while it is about to melt. Are known.

This method does not have very good thickness dimensional accuracy, and when bonding the above glass to a predetermined Ii [Ka
It's good, but it's useful when you want to precisely measure the thickness of a metal plate and a glass plate after they're joined.

Furthermore, with this method, when bonding, SOO ~
Since it requires a temperature of 1100° C. (400 to 600° C. for soft glass), one drawback is that it cannot be used with metal wires that will oxidize or melt in the air at this temperature.

Other bonding methods include anodic bonding. According to this method, the accuracy of the dimension in the thickness direction is extremely high, and the temperature during the bonding operation is as low as 400° C. or less. However, the materials that can be strongly bonded to date are limited to silicon and glass, and other materials, such as metals and glass, have the disadvantage of weak bonding strength.

C0 Object of the Invention The technical problem to be solved by the present invention is to bond metal and glass strongly and airtightly at a relatively low temperature while maintaining precision in the thickness direction.

d0 Structure of the Invention Conventionally, a technique for forming an amorphous silicon film on the surface of a metal plate made of stainless steel, aluminum, copper, etc. has been known. You can get close to it. Focusing on this point, in the present invention,
Using this technique, an amorphous silicon film was formed on the surface of the gold circle, and glass was bonded through this film using the positive RiS bonding technique described above.

EXAMPLES The present invention will be described below with reference to the drawings. Figure 1: Company metal plate 10
The process of forming an amorphous silicon film 2 on the surface is shown. Metal plate IK can be used in many circumferences such as stainless steel, aluminum, and copper. The amorphous silicon film 2 is formed with high adhesive strength on the surface of the metal plate 1 by glow discharge, OVD method, or the like. The temperature at this time! c#1150-30
The temperature is relatively low at 0'C.

Figure #2 shows the process of bonding glass 3 to a gold j-plate 1 via an amorphous silicon film 2 formed on its surface. A glass plate 3 is placed on the amorphous silicon film 2 on the surface of the metal plate 1, and with bonding pressure applied, a voltage is applied between the gold plate 1 and the glass plate 3 to perform anodic bonding. Strong bonding can be achieved at a relatively low working temperature of 400°C.

In the step shown in FIG. 1 above, the amorphous silicon film 2
The thickness can be controlled with an accuracy of 0.1 to 1 μm.

Further, in the process shown in FIG. 2, no adhesive is present between the amorphous silicon film 2 and the glass plate 3, and changes in the thickness of the metal plate 11, glass plate 3, etc. due to bonding are negligibly small.

Therefore, the overall thickness after bonding is determined by the thickness of the materials before bonding, and the accuracy in the thickness direction of the metal plate 1 on which amorphous silicon [2 is formed and the glass plate 3 is maintained precisely. Can be joined. Furthermore, strong bonding can be achieved at relatively low temperatures.

FIG. 3 shows a case in which a metal plate 1 is sandwiched between two glass plates 3 and 3' and joined together. After forming amorphous silicon films z and 2' on the upper and lower surfaces of the metal plate 1, respectively, the two glass plates 3 and 3' are bonded together by anodic bonding as in the previous case.

FIG. 4 shows a case where a glass plate 3 is sandwiched between two metal plates 1.1' and joined together. Amorphous silicon p1.2°2' is formed on the upper surface of the metal plate 1 and the lower surface of the metal plate 1', and anodic bonding is performed by sandwiching the glass plate 3 between the metal plates 1 and 11 so that the respective amorphous film surfaces face each other. .

Figures Wc5 and 6 show examples in which the method of the present invention is applied to elements for pressure plugs. In Figure t45, numeral 4 is a metal block in which a cavity with a ladder-shaped cross section is formed by etching or the like, and the thin wall portion 4a serves as a diaphragm portion that receives pressure. The amorphous silicon film 2 is formed on the peripheral surface of the thick part on the lower side of the metal block 4, and is anodically bonded to the glass block 5 provided with the pressure guide hole 5a in this part. Meat, amorphous film +7 film 2 to metal block 4:, I
It may be formed before C-etching.

FIG. 6 shows a structure in which the pressure detection element trap metal tube shown in FIG. 5 is joined. Reference numeral 6 denotes a metal tube provided with a pressure introduction hole 6a, an amorphous silicon film 2' is formed on the end face of the glass block 5, and the lower surface Km of the glass block 5 is joined by anodic bonding.

In fact, in the case of the male side, the glass block 5 and the metal block 4 or metal tube 6 can be strongly and airtightly joined through the amorphous silicon film z, 2/ formed on the surface of the gold 1, and
Since the welding can be performed at a relatively low temperature, the residual stress applied to the diamond slam 4a can be reduced compared to the case of welding metals together.

5. Effects of the Invention According to the present invention, metal and glass can be joined strongly and airtightly at a relatively low temperature while maintaining precision in the thickness direction of joining.

[Brief explanation of the drawing]

FIG. 1 is a perspective view showing the process of forming an amorphous silicon film on the surface of a metal plate in the present invention, and FIG. be. DESCRIPTION OF SYMBOLS 1... Gold M plate, 2,2/... Amorphous silicon film, 3... Glass plate, 4... Metal block. 5...Glass block, 6...Gold R1 patent applicant
Kinsha Hokushin Den Co., Ltd. T%4 Bansakusho Representative Shimizu
Seifu Figure S Figure 6

Claims (1)

[Claims] An amorphous silicon film is formed on a metal material. A method for joining metal and glass, characterized in that glass is joined to the surface of this amorphous silicon film using a Wk electrode bonding process.