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JPS59174007A - Feedback amplifier circuit - Google Patents

Feedback amplifier circuit

Info

Publication number
JPS59174007A
JPS59174007A JP4825583A JP4825583A JPS59174007A JP S59174007 A JPS59174007 A JP S59174007A JP 4825583 A JP4825583 A JP 4825583A JP 4825583 A JP4825583 A JP 4825583A JP S59174007 A JPS59174007 A JP S59174007A
Authority
JP
Japan
Prior art keywords
gate
source
fetq
resistance
feedback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4825583A
Other languages
Japanese (ja)
Inventor
Masahiro Hayakawa
雅博 早川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4825583A priority Critical patent/JPS59174007A/en
Publication of JPS59174007A publication Critical patent/JPS59174007A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)

Abstract

PURPOSE:To obtain a feedback type amplifying circuit having an optimum noise index despite a single power supply system by adding a source resistance and a source by-pass capacitor to a field effect transistor. CONSTITUTION:A field effect transistor FETQ contains a feedback resistance Rf and a feedback capacitor Cf. At the same time, a gate resistance Rg is provided between the gate and the earth of the FETQ. Then a source resistance Rs and a source by-pass capacitor Cs are put between the gate and the source of the FETQ. Thus the minus voltage, i.e., the gate bias voltage is generated between the gate and the souece of the FETQ. Thus it is possible to control properly the working point of the FETQ by selecting properly the value of the resistance Rs and then applying the set gate bias voltage to the gate of the FETQ. In such a way, a feedback type amplifying circuit having an optimum noise index can be obtained even when a single power supply system.

Description

【発明の詳細な説明】 発明の技術分野 本発明は、例えば超高周波帯で使用するGaAS系モノ
リシック集積回路に好適な帰還型増幅回路に関する。
DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a feedback amplifier circuit suitable for a GaAS monolithic integrated circuit used, for example, in an ultra-high frequency band.

従来技術と問題点 一般に、帰還型増幅回路は広帯域に亙り平坦な増幅が可
能であると共に特に低い周波数側で安定な動作を期待で
きる為に多用されている。
Prior Art and Problems In general, feedback amplifier circuits are widely used because they are capable of flat amplification over a wide band and can be expected to operate stably, especially on the low frequency side.

第1図は従来の帰還型増幅回路の一例を表わす要部回路
図である。
FIG. 1 is a circuit diagram of a main part showing an example of a conventional feedback type amplifier circuit.

図に於いて、QはGaAs系電界効果トランジスタ、R
fは帰還抵抗、Cfは帰還コンデンサ、Rgはゲート抵
抗、Rdは電源抵抗、+VDDはドレイン側供給電圧、
 VCCはゲート側供給電圧をそれぞれ示す。
In the figure, Q is a GaAs-based field effect transistor, R
f is the feedback resistance, Cf is the feedback capacitor, Rg is the gate resistance, Rd is the power supply resistance, +VDD is the drain side supply voltage,
VCC indicates the gate side supply voltage, respectively.

この従来例では、それを動作させる為に二つの電源、即
ち、トレイン側供給電圧十van用の電源とケート側供
給電圧−VCC用の電源とを必要とする旨の欠点を持っ
ている。
This conventional example has a drawback in that two power supplies are required to operate it, namely, a power supply for the train side supply voltage 1 VAN and a power supply for the cable side supply voltage -VCC.

第2図は第1図に関して説明した従来例と異なる従来例
を表わす要部回路図であり、第1図に関して説明した部
分と同部分は同記号で指示しである。
FIG. 2 is a main circuit diagram showing a conventional example different from the conventional example explained with reference to FIG. 1, and the same parts as those explained with reference to FIG. 1 are indicated by the same symbols.

この従来例が第1図に見られる従来例と相違する点は、
電界効果トランジスタQのゲートが抵抗Rgを介して接
地されていることである。
The difference between this conventional example and the conventional example shown in Fig. 1 is as follows.
The gate of the field effect transistor Q is grounded via a resistor Rg.

このようにすると、電源としてはドレイン側供給電圧+
vDD用のみで良いから、所謂、−電源方式となる。然
し乍ら、この場合の電界効果トランジスタQとしてはノ
ーマリ・オンであるから、ケート・バイアス電圧か0 
〔V〕であれば、所謂、ID5S動作、即ち、ドレイン
電流か最大の状態で動作させることしかできず、これで
は、例えば、雑音抑制の面で雑音指数を最適化すること
は不可能になる。
In this way, as a power supply, the drain side supply voltage +
Since it only needs to be used for vDD, it becomes a so-called negative power supply method. However, since the field effect transistor Q in this case is normally on, the gate bias voltage is 0.
[V], so-called ID5S operation, that is, operation can only be performed with the drain current at its maximum, which makes it impossible to optimize the noise figure in terms of noise suppression, for example. .

発明の目的 本発明は、帰還型増幅回路に於いて、−電源方式を採り
なから且つケート・バイアス電圧も印加することが出来
るようにする。
OBJECTS OF THE INVENTION The present invention provides a feedback amplifier circuit that does not use a negative power source system and can also apply a gate bias voltage.

発明の実施例 第3図は本発明一実施例の要部回路図であり、第1図及
び第2図に関して説明した部分と同部分は同記号で指示
しである。
Embodiment of the Invention FIG. 3 is a circuit diagram of a main part of an embodiment of the present invention, and the same parts as those explained in connection with FIGS. 1 and 2 are indicated by the same symbols.

本実施例が、第1図及び第2図に示した従来例と相違す
る点は、電界効果トランジスタQのソースと接地間にソ
ース抵抗R5及びソース側路コンデンザCsを挿入し、
ケート・ソース間に負の電圧、即ち、ゲート・バイアス
電圧を発生させるようにしたことである。
This embodiment differs from the conventional example shown in FIGS. 1 and 2 in that a source resistor R5 and a source bypass capacitor Cs are inserted between the source of the field effect transistor Q and the ground.
A negative voltage, that is, a gate bias voltage, is generated between the gate and the source.

従って、ソース抵抗R5O値を適当に選択することに依
り設定したケート・バイアス電圧を電界効果トランジス
タQののゲートに印加して、その動作点を適正に制御す
ることが可能となり、−電源方式でありなから、雑音指
数が最適化された帰還型増幅回路とすることが出来る。
Therefore, by appropriately selecting the value of the source resistance R50, it is possible to apply a set gate bias voltage to the gate of the field effect transistor Q to appropriately control its operating point. Therefore, it is possible to create a feedback amplifier circuit with an optimized noise figure.

第4図は本発明に於ける他の実施例の要部回路図であり
、83図に関して説明した部分と同部分は同記号で指示
しである。
FIG. 4 is a circuit diagram of a main part of another embodiment of the present invention, and the same parts as those explained in connection with FIG. 83 are indicated by the same symbols.

本実施例が第3図に示した実施例と相違する点は、帰還
コンデンサCfを持たないことである。
This embodiment differs from the embodiment shown in FIG. 3 in that it does not have a feedback capacitor Cf.

この実施例では、低い周波数まで良好に帰還がかかるこ
とが特徴であるが、第3図に示した実施例と異なり、ソ
ース抵抗RSのみの調節でケート・バイアス電圧を設定
することはできず、その他にゲート抵抗Rg、電#抵抗
Rd、帰還抵抗Rfのそれぞれを綜合的に調節しなけれ
ばならない。
This embodiment is characterized by good feedback down to low frequencies, but unlike the embodiment shown in FIG. 3, it is not possible to set the gate bias voltage by adjusting only the source resistance RS. In addition, each of the gate resistance Rg, voltage resistance Rd, and feedback resistance Rf must be adjusted comprehensively.

発明の効果 本発明に依れば、ドレインのみに電源が接続され且つド
レインとゲートとの間に帰還抵抗が挿入された電界効果
トランジスタを有する帰還型増幅回路に於いて、その電
界効果トランジスタのソースト接地の間にソース抵抗と
ソース側路コンデンザとをそれぞれ挿入し、同じくゲー
トと接地の間にゲート抵抗を挿入した構成にしであるの
で、ソースとゲートの間には負電圧が発生し、その負電
圧はゲート・バイアス電圧となって前記電界効果トラン
ジスタの動作点を定めることが出来るから、−電源方式
であるにも拘わらす、雑音指数の最適化が可能となり、
特性良好な帰還型増幅回路が得られるものである。
Effects of the Invention According to the present invention, in a feedback amplifier circuit having a field effect transistor in which a power supply is connected only to the drain and a feedback resistor is inserted between the drain and the gate, the source transistor of the field effect transistor is Since a source resistor and a source bypass capacitor are inserted between the ground and a gate resistor is inserted between the gate and the ground, a negative voltage is generated between the source and the gate. Since the voltage becomes the gate bias voltage and can determine the operating point of the field effect transistor, it is possible to optimize the noise figure even though it is a power supply system.
A feedback amplifier circuit with good characteristics can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図及び第2図はそれぞれ異なる従来例の要部回路図
、第3図及び第4図は本発明のそれぞれ異なる実施例の
要部回路図である。 113ニ於イて、Qは電界効果トランジスタ、Rfは帰
還抵抗、Cfは帰還コンデンサ、Rgはケート抵抗、R
dば電源抵抗、+vanはドレイン側供給電圧、 VC
Cはゲート側供給電圧、R5はソース抵抗、cSはソー
ス側路コンテンサである。 特許出願人   富士通株式会社 代理人弁理士  玉蟲 久五部 (外3名) 第1図 第2図 第3図 第4図
1 and 2 are circuit diagrams of main parts of different conventional examples, and FIGS. 3 and 4 are circuit diagrams of main parts of different embodiments of the present invention. 113, Q is a field effect transistor, Rf is a feedback resistor, Cf is a feedback capacitor, Rg is a gate resistor, R
d is the power supply resistance, +van is the drain side supply voltage, VC
C is the gate side supply voltage, R5 is the source resistance, and cS is the source bypass capacitor. Patent applicant Fujitsu Ltd. Representative Patent Attorney Kugobe Tamamushi (3 others) Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】[Claims] ドレインのみに電源が接続され且つドレイン・ゲート間
に帰還抵抗が挿入された電界効果トランジスタを有する
帰還型増幅回路に於いて、前記電界効果トランジスタの
ソースと接地の間にそれぞれ挿入されたソース抵抗及び
ソース側路コンデ7号、同じくケートと接地の間に挿入
されたケート抵抗を備えてなることを特徴とする帰還型
増幅回路。
In a feedback amplifier circuit having a field effect transistor in which a power supply is connected only to the drain and a feedback resistor is inserted between the drain and the gate, a source resistor and a feedback resistor are inserted between the source and ground of the field effect transistor, respectively. Source bypass circuit No. 7, a feedback amplifier circuit characterized in that it also includes a gate resistor inserted between the gate and ground.
JP4825583A 1983-03-23 1983-03-23 Feedback amplifier circuit Pending JPS59174007A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4825583A JPS59174007A (en) 1983-03-23 1983-03-23 Feedback amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4825583A JPS59174007A (en) 1983-03-23 1983-03-23 Feedback amplifier circuit

Publications (1)

Publication Number Publication Date
JPS59174007A true JPS59174007A (en) 1984-10-02

Family

ID=12798331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4825583A Pending JPS59174007A (en) 1983-03-23 1983-03-23 Feedback amplifier circuit

Country Status (1)

Country Link
JP (1) JPS59174007A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5072199A (en) * 1990-08-02 1991-12-10 The Boeing Company Broadband N-way active power splitter
EP0596562A1 (en) * 1992-11-04 1994-05-11 Laboratoires D'electronique Philips S.A.S. Device comprising a circuit for processing an alternating signal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5072199A (en) * 1990-08-02 1991-12-10 The Boeing Company Broadband N-way active power splitter
EP0596562A1 (en) * 1992-11-04 1994-05-11 Laboratoires D'electronique Philips S.A.S. Device comprising a circuit for processing an alternating signal

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