JPS59155067A - Thin film resistance heater - Google Patents
Thin film resistance heaterInfo
- Publication number
- JPS59155067A JPS59155067A JP58221341A JP22134183A JPS59155067A JP S59155067 A JPS59155067 A JP S59155067A JP 58221341 A JP58221341 A JP 58221341A JP 22134183 A JP22134183 A JP 22134183A JP S59155067 A JPS59155067 A JP S59155067A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistor
- deposited
- thin film
- passivation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 14
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 239000004020 conductor Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 3
- 239000012212 insulator Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000000758 substrate Substances 0.000 description 15
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001362 Ta alloys Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000007651 thermal printing Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010412 perfusion Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/33505—Constructional details
- B41J2/33535—Substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
- B41J2/14112—Resistive element
- B41J2/14129—Layer structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/33545—Structure of thermal heads characterised by dimensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/3355—Structure of thermal heads characterised by materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/33555—Structure of thermal heads characterised by type
- B41J2/3357—Surface type resistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/3359—Manufacturing processes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electronic Switches (AREA)
- Surface Heating Bodies (AREA)
- Non-Adjustable Resistors (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はサーマル・プリント・−・ノ１−用の薄膜抵抗
ヒータに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film resistive heater for thermal printing.
従来から、サーマル・インク・シェノ］−・プリンタ、
サーマル・プリンタ等に用いられるサーマル・プリン［
・・ヘッドは、薄膜抵抗ヒータを具備している。薄膜抵
抗ヒータは、一般に被覆技術によって形成される。Traditionally, thermal ink printers,
Thermal printers used in thermal printers [
...The head is equipped with a thin film resistance heater. Thin film resistive heaters are generally formed by coating techniques.
従来の被覆技術によって形成された薄膜抵抗ヒータの断
面図を第１図に示す。A cross-sectional view of a thin film resistive heater formed by conventional coating techniques is shown in FIG.
第１図において、抵抗層１０は５００人厚さのタンタル
およびアルミニウムの合金で形成されており、二酸化シ
リコンの絶縁層１５上にデポジット（ｄｅｐｏｓｉｔ
）されている。絶縁層１５はシリコン基板２０を被って
いる。In FIG. 1, a resistive layer 10 is formed of a 500 mm thick tantalum and aluminum alloy, deposited onto an insulating layer 15 of silicon dioxide.
) has been done. Insulating layer 15 covers silicon substrate 20 .
抵抗層１０およびシリコン基板２０は、絶縁層１５によ
って電気的、熱的に絶縁されている。導電層３０は厚さ
１μｍのアルミニウムで形成されており、抵抗層１０上
にデポジットされている。Resistance layer 10 and silicon substrate 20 are electrically and thermally insulated by insulating layer 15. The conductive layer 30 is made of aluminum with a thickness of 1 μm and is deposited on the resistive layer 10 .
導電Ｎ３０および抵抗層１０は、導体５０に接続された
抵抗４０を形成するようにパターン化される。パシー・
−ジョン層６０は、例えば厚さ２〜３μｍの二酸化シリ
コンあるいはシリコンカーバイトで形成され、全体を被
っている。抵抗４０はバンヘーション層６０上に設けら
れるインクあるいは感熱紙（図示せず〉に熱を与える。Conductive N30 and resistive layer 10 are patterned to form resistor 40 connected to conductor 50. Patsy
- The John layer 60 is formed of silicon dioxide or silicon carbide, for example, with a thickness of 2 to 3 μm, and covers the entire surface. Resistor 40 applies heat to ink or thermal paper (not shown) provided on banhesion layer 60.
第１図に示した薄膜抵抗ヒータにおいて、抵抗層１０お
よび導電層３０をパターン形成するとき、領域７０にお
いて、段差が生じる。これにより、パシヘーション層６
０内のス１−レスが領域７０において極めて大きくなり
、領域７０にピンホールが生じるという欠点がある。In the thin film resistance heater shown in FIG. 1, when patterning the resistive layer 10 and the conductive layer 30, a step is created in the region 70. As a result, the passivation layer 6
There is a drawback that the stress within 0 becomes extremely large in the region 70, and a pinhole occurs in the region 70.
また、ス［・レスおよびピンホールの発生をμｊ止する
ために、パシー・−ジョン層６０の厚みを１曽す方法が
あるが、抵抗層１０から感熱紙（図示−ヒず）−の熱伝
達率か低下するという欠点がある。In addition, in order to prevent the occurrence of scratches and pinholes, there is a method in which the thickness of the resistance layer 60 is reduced to 1, but the heat from the resistance layer 10 to the thermal paper (not shown) The disadvantage is that the transmission rate decreases.
本発明の薄膜抵抗ヒータは第１図の薄膜抵抗ヒータの構
造を逆の順序で構成したものであり、ノ・ζシヘーショ
ン層内のストレスおよびピン、ｌ又−）しＧこよって生
しる欠点を除去することができる。The thin film resistance heater of the present invention is constructed by reversing the structure of the thin film resistance heater shown in FIG. can be removed.
厚さ１〜２μｍの二酸化シリコンあるいはシリコンカー
ハイ１−で形成されたパシヘーンヨン層力（シリコンあ
るいはガラス等の＠１基板上υこ直接デポジットされ、
パシヘーンヨン層は均一で平らな層となる。その後、例
えば厚さ５００人のクンタルとアルミニウムの合金から
成る抵抗層、厚さ１μｍのアルミから成る導電層がデボ
ジ・ノド、）・ζターン化される。厚さ２〜３μｍの二
酸化シリコンで形成された熱絶縁層か抵抗層、導電層を
被うようにデポジットされる。次に、ヒートシンクおよ
び支持層として働くニッケル、銅等の金属で形成された
厚さ１０〜１０００μｍの厚い金属層が形成される。金
属層は第２の基板に固着され、最初の基板はエツチング
によって除去される。その結果、サーマル・プリント・
−・・７１・に最適な均一のフィルム状抵抗が得られる
。A layer formed of silicon dioxide or silicon dioxide with a thickness of 1 to 2 μm (directly deposited on a substrate such as silicon or glass)
The Pashihan Yong layer is a uniform and flat layer. Thereafter, a resistive layer made of an alloy of aluminum and aluminum having a thickness of 500 μm, for example, and a conductive layer made of aluminum with a thickness of 1 μm are formed into a deboji-nod, )·ζ turn. A thermally insulating or resistive layer made of silicon dioxide with a thickness of 2 to 3 .mu.m is deposited overlying the conductive layer. Next, a thick metal layer of 10-1000 μm thick is formed of metal such as nickel, copper, etc., which acts as a heat sink and support layer. The metal layer is affixed to the second substrate and the first substrate is removed by etching. As a result, thermal printing
An optimal uniform film resistance can be obtained for -...71.
以下本発明の１実施例を用いて説明する。An embodiment of the present invention will be explained below.
第２図は本発明の薄膜抵抗ヒータを製造する過程で生し
る中間生成物の断面図である。まず、厚さ１〜２μｍの
シリコン基板ノ・・・イトで形成された第１パシヘーシ
ヨン層１１０が、厚さ０．５ｍｒｎのシリコンで形成さ
れた第１基板１２０上にデポジットされる。第１基板１
２０は、なめらかで平らなガラスあるいは他のエツチン
グ可能な材料で形成することもできる。次に厚さ０．２
〜０．５μｍの二酸化シリコンで形成された第２パシヘ
ーシヨン層１３０が、第１パシヘーシヨン層１１０上に
デポジットされるっ第１．第２パシヘーシヨン層１１０
，１３０は他の適当な材料で形成することもできる。又
、第１．第２パシベーション層１１０．１３０を結合さ
せて、シリコンカーバイド、二酸化シリコン等で単一の
パシベーション層として形成することもできる。前記い
ずれの場合にも、パシベーション層は、なめらかで平た
んであり、ピンホールは極めて少ない。FIG. 2 is a cross-sectional view of an intermediate product produced in the process of manufacturing the thin film resistance heater of the present invention. First, a first passivation layer 110 made of a silicon substrate node with a thickness of 1-2 μm is deposited on a first substrate 120 made of silicon with a thickness of 0.5 μm. First substrate 1
20 may also be formed from smooth, flat glass or other etchable material. Next, the thickness is 0.2
A second passivation layer 130 formed of ~0.5 μm silicon dioxide is deposited on the first passivation layer 110. Second passivation layer 110
, 130 may also be formed from other suitable materials. Also, 1st. The second passivation layers 110, 130 can also be combined and formed as a single passivation layer of silicon carbide, silicon dioxide, or the like. In both cases, the passivation layer is smooth and flat, with very few pinholes.
抵抗５１４０は厚さ５００人のタンタルおよびアルミニ
ウム合金、導電層１７０は厚さ１，０μｍのアルミニウ
ムで形成されており、各々パシヘーンヨン層１１０およ
び１３０上にデボジノ１される。これによって抵抗１６
０および導電体１５０が形成される。The resistor 5140 is made of a tantalum and aluminum alloy with a thickness of 500 μm, and the conductive layer 170 is made of aluminum with a thickness of 1.0 μm, which are deposited on the passive layers 110 and 130, respectively. This results in a resistance of 16
0 and a conductor 150 are formed.
第２図において、導電層１７０は抵抗層１４０上に設け
られているが、これらの層の順序を逆にすることも可能
である。次に厚さ２〜３μｍの二酸化シリコンで形成さ
れた絶縁層１８０が、抵抗１６０および導電体１７０上
にデボシソｌされる。In FIG. 2, conductive layer 170 is provided over resistive layer 140, but the order of these layers could be reversed. An insulating layer 180 made of silicon dioxide with a thickness of 2-3 .mu.m is then debossed over the resistor 160 and conductor 170.
次に、厚さ１００〜２００μｍのニッケルあるいは銅で
形成されたフィルム上の支持層１９０か絶縁ｒ４１８０
ｋにデポジットされる。支持層１９０は、例えば、薄い
金属をスパンタリングあるいは蒸着することによって″
形成される。支持層１９０は、以後の処理段階および支
持部材として働く。Next, a support layer 190 on a film made of nickel or copper with a thickness of 100 to 200 μm or an insulating R4180
Deposited in k. The support layer 190 can be formed, for example, by sputtering or vapor depositing a thin metal.
It is formed. Support layer 190 serves as a support member for subsequent processing steps.
絶縁層１８０は抵抗１６０と支持層１９０とを熱的、電
気的に絶縁する。The insulating layer 180 thermally and electrically insulates the resistor 160 and the support layer 190.
第３図は本発明の薄膜抵抗ヒータを表わす図である。FIG. 3 is a diagram representing a thin film resistance heater of the present invention.
第２図、第３図において、支持層１９０は第２基板３１
０に固着される。最後に、第１基板１２０はエツチング
等の適当な処理によって除去される。その結果第３図に
示すように、均一で平らな第１．第２パシー・−ジョン
層１１０゜１３０によって完全に被われた抵抗１６０が
表われる。絶縁層１８０お−よび支持層１９０を厚く形
成すれば、第２基板３１０を設ける前に、第１基板１２
０を除去することもできる。In FIGS. 2 and 3, the support layer 190 is connected to the second substrate 31.
Fixed to 0. Finally, first substrate 120 is removed by a suitable process such as etching. As a result, as shown in FIG. 3, a uniform and flat first. A resistor 160 is exposed which is completely covered by the second pathion layer 110.degree. 130. If the insulating layer 180 and the supporting layer 190 are formed thickly, the first substrate 12 can be formed thickly before the second substrate 310 is provided.
0 can also be removed.
第１図は従来の薄膜抵抗ヒータの断面図。
第２図は本発明の薄膜抵抗ヒータの製造過程で生しる中
間生成物の断面図。
第３図は本発明の薄膜抵抗ヒータの断面図。
１０．１４０：抵抗層、１５．１８．０：絶縁層、２０
：シリコン基板、３０．１７０：導電層、４０．１６０
：抵抗、５０． １ｓｏ：導電体、６０：バシヘーショ
ン層、７０：領域、１１０：第１パシー・−ジョン層１
．ｉ ３０ ：第２パシベーション層、１２０：第１基
板、３１０：第２基板、１９０：支持層
出願人 掻回・ヒューレソ［・・パンカート株式会社代
理人 弁理士 長 谷 川 次 男／２０−シイ
ＦＩＧ、 ２
１９０ｒ
ＦＩ６． ３
手続省市正書 （方式）
％式％
１ 事件の表示 昭和５８年 特許 願第２２
１３４１号３ 補正をする者
事件との関係 特 許 出 願 人４代理
人FIG. 1 is a cross-sectional view of a conventional thin film resistance heater. FIG. 2 is a cross-sectional view of an intermediate product produced during the manufacturing process of the thin film resistance heater of the present invention. FIG. 3 is a sectional view of the thin film resistance heater of the present invention. 10.140: Resistance layer, 15.18.0: Insulating layer, 20
: Silicon substrate, 30.170 : Conductive layer, 40.160
: resistance, 50. 1so: conductor, 60: perfusion layer, 70: region, 110: first passage layer 1
．． i 30: 2nd passivation layer, 120: 1st substrate, 310: 2nd substrate, 190: Supporting layer Applicant: Kikai Hureso [Pankert Co., Ltd. agent Patent attorney Tsugu Hasegawa Male/20-C FIG, 2 190r FI6. 3 Ministry of Procedure Official Book (Method) % Formula % 1 Indication of Case 1981 Patent Application No. 22
1341 No. 3 Relationship with the case of the person making the amendment Patent applicant 4 agent
Claims (1)
ン層で被われ、複数の導電体に接続された抵抗と、前記
抵抗および前記複数の導電体を被う支持層とから成る薄
膜抵抗し−タ。A thin film resistor comprising a passivation layer of uniform thickness, a resistor covered by the passivation layer and connected to a plurality of conductors, and a support layer covering the resistor and the plurality of conductors. Ta.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44441282A | 1982-11-24 | 1982-11-24 | |
| US444412 | 1982-11-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59155067A true JPS59155067A (en) | 1984-09-04 |
| JPH0340911B2 JPH0340911B2 (en) | 1991-06-20 |
Family
ID=23764780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58221341A Granted JPS59155067A (en) | 1982-11-24 | 1983-11-24 | Thin film resistance heater |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0113950B1 (en) |
| JP (1) | JPS59155067A (en) |
| DE (1) | DE3379526D1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60159062A (en) * | 1984-01-31 | 1985-08-20 | Canon Inc | Liquid jet recording head |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5413031A (en) * | 1977-06-29 | 1979-01-31 | Toshiba Corp | Heating member |
| JPS57111983A (en) * | 1980-12-27 | 1982-07-12 | Matsushita Electric Works Ltd | Panel heater |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4169032A (en) * | 1978-05-24 | 1979-09-25 | International Business Machines Corporation | Method of making a thin film thermal print head |
| EP0015100B1 (en) * | 1979-02-26 | 1983-08-17 | National Research Development Corporation | Method of incorporating a distributed microwave circuit element in a microwave integrated circuit |
-
1983
- 1983-08-10 DE DE8383304617T patent/DE3379526D1/en not_active Expired
- 1983-08-10 EP EP19830304617 patent/EP0113950B1/en not_active Expired
- 1983-11-24 JP JP58221341A patent/JPS59155067A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5413031A (en) * | 1977-06-29 | 1979-01-31 | Toshiba Corp | Heating member |
| JPS57111983A (en) * | 1980-12-27 | 1982-07-12 | Matsushita Electric Works Ltd | Panel heater |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0113950A2 (en) | 1984-07-25 |
| JPH0340911B2 (en) | 1991-06-20 |
| EP0113950A3 (en) | 1985-12-18 |
| DE3379526D1 (en) | 1989-05-03 |
| EP0113950B1 (en) | 1989-03-29 |
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