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JPS59152652A - Manufacture of heat pipe structure ic substrate - Google Patents

Manufacture of heat pipe structure ic substrate

Info

Publication number
JPS59152652A
JPS59152652A JP58027445A JP2744583A JPS59152652A JP S59152652 A JPS59152652 A JP S59152652A JP 58027445 A JP58027445 A JP 58027445A JP 2744583 A JP2744583 A JP 2744583A JP S59152652 A JPS59152652 A JP S59152652A
Authority
JP
Japan
Prior art keywords
board
substrate
heat pipe
bonding
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58027445A
Other languages
Japanese (ja)
Inventor
Migiwa Ando
安藤 汀
Hisaharu Shiromizu
白水 久晴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Tokushu Togyo KK
Niterra Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
Nippon Tokushu Togyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Spark Plug Co Ltd, Nippon Tokushu Togyo KK filed Critical NGK Spark Plug Co Ltd
Priority to JP58027445A priority Critical patent/JPS59152652A/en
Publication of JPS59152652A publication Critical patent/JPS59152652A/en
Pending legal-status Critical Current

Links

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0233Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes the conduits having a particular shape, e.g. non-circular cross-section, annular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
    • H01L21/4882Assembly of heatsink parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve the working efficiency and to enhance the heat sink by separately manufacturing and baking an IC substrate formed in a wick structure on one side, an opposite plate, and a supporting frame having wick material filling hole interposed between the substrate and the opposite plate, then assembling and bonding or bonding the frame and the opposite plate in the steps, then baking them and then bonding the sintered substrate. CONSTITUTION:A manufactured circuit substrate A is covered with metal Au on the surface, and a copper pipe is soldered to the position of a wick solution filling hole 23. Silicone resin adhesive is coated on the outer peripheral end of capillary slot 21a forming surface of an opposite plate C, a supporting frame B is superposed and bonded thereon, and dried and cured. Then, glass fiber is filled in ten wick material filling holes 22 of the frame B. The adhesive is coated on the upper surface of the frame B except the filled parts, an IC substrate B is superposed and bonded thereon, followed by curing.

Description

【発明の詳細な説明】 に関するものである。[Detailed description of the invention] It is related to.

近年、発熱密度の高いパワートランジスタ回路等の熱放
散性を向上するためにヒートパイプを利用したIC基板
が数多く見られる様になってきた。
In recent years, many IC boards have been seen that utilize heat pipes to improve the heat dissipation of power transistor circuits and the like that generate high heat density.

従来のヒートパイプ構造のIC基板を第1F!!Jに示
し、イ図の斜視図は電子部品実装用IC基板(以下、I
C基板と略記す)、口図の斜#A図はヒートパイプであ
る。ヒートパイプ5の1上面の部分に穿設部分IOを設
けて、該穿設部分lOに、回路実装(素子搭載印刷部3
、配線印刷部4)が施されたIC基板1を嵌入して、突
出支持部s上に載置接着して使用されていた。この製法
はグリーンシートを加工し、積層接着してから焼結しヒ
ートパイプ5構造とし、別に回路配線を施したIC基板
1を製作、焼結したものであった。
IC board with conventional heat pipe structure on the 1st floor! ! The perspective view of Figure A is an IC board for mounting electronic components (hereinafter referred to as I).
(abbreviated as C board), the diagonal #A diagram in the opening diagram is a heat pipe. A perforated portion IO is provided on the upper surface of the heat pipe 5, and a circuit mounting (element mounting printing portion 3) is provided in the perforated portion IO.
, the printed wiring portion 4) is inserted into the IC board 1, placed on the protruding support portion s, and bonded. In this manufacturing method, green sheets were processed, laminated and bonded, and then sintered to form a heat pipe 5 structure, and an IC board 1 with circuit wiring was separately manufactured and sintered.

以上の方法によれば、グリーンシートの生段階で、内部
空間11を保有するヒートパイプ5を構成するために、
製作時或いはベーキング時にグリーンシートのたれ下り
を生じ、焼成後、表面が凹凸状で平坦面とならなかった
According to the above method, in order to configure the heat pipe 5 having the internal space 11 in the raw stage of the green sheet,
The green sheet sag during manufacturing or baking, and after baking, the surface was uneven and not flat.

そのため焼結後配線回路9の印刷や蒸着を行う場合には
支障が生じる外、IC基板1との密着安定性が悪く、使
用中の熱放散の効率が低下した。
Therefore, not only problems occur when printing or vapor-depositing the wiring circuit 9 after sintering, but also the adhesion stability with the IC substrate 1 is poor, and the efficiency of heat dissipation during use is reduced.

またヒートパイプ5とIC基板1とをはめ込み構造で作
成するため、ヒートパイプの突出支持部8の設置等余分
の材料と高加工費を必要とし、かつ前記平坦面とならな
いために合格率が悪かった。
Furthermore, since the heat pipe 5 and the IC board 1 are made with an inset structure, extra materials such as the installation of the protruding support part 8 of the heat pipe and high processing costs are required, and the pass rate is low because the surface is not flat. Ta.

本発明は以上の様な欠点を解消するためになされたもの
であり、第2図の分解斜視図により、その要旨を述べれ
ば、片面にウィック構造21を設けたIC基板Aと、該
基板Aとの対向板Cと、その基板Aと対向板Cとの間に
介在するウィック材充填孔22を有する支持枠Bとを別
々に製作して焼成後、組立接着するか、又は支持枠Bと
対向板Cとを主工程で接着し、焼成後、焼結したA基板
を接着して製造することを特徴とするものである。
The present invention has been made to eliminate the above-mentioned drawbacks, and the gist thereof can be described as shown in the exploded perspective view of FIG. 2. A facing plate C and a supporting frame B having a wick material filling hole 22 interposed between the substrate A and the facing plate C are manufactured separately and then assembled and bonded together after firing, or the supporting frame B and It is characterized in that it is manufactured by bonding the opposing plate C in the main process, and then bonding the sintered A substrate after firing.

本発明ではIC基板Aと支持枠B及び対向板Cとを同一
のセラミック材質で作成することが、ヒートパイプ構造
IC基板の特性や製造原価に有利であるが、異質のセラ
ミック材を混用することも出来、例えばIC基板Aをガ
ラスセラミックで作成し、支持枠Bと対向板Cとを熱伝
導率に優れた他のセラミック材や金属材を適用すること
も出来る。又これらの組立に使用する接着方法は、有機
又は無機接着剤、半田やレーザ等の手段が有り、材質や
使用目的に応じて最適接着方法をとることが出来る。
In the present invention, it is advantageous for the characteristics and manufacturing cost of the heat pipe structure IC board to make the IC board A, the support frame B, and the opposing plate C from the same ceramic material, but mixing different ceramic materials is advantageous. For example, the IC board A can be made of glass ceramic, and the support frame B and the opposing plate C can be made of other ceramic or metal materials with excellent thermal conductivity. The bonding methods used for these assemblies include means such as organic or inorganic adhesives, solder, and laser, and the optimum bonding method can be selected depending on the material and purpose of use.

本発明は、ウィック構造を有するグリーンシートの成形
方法や各部品を焼結後、接着組立てるか、又は支持枠B
と対向板Cとを主工程で接着後、焼結して、焼結ずみの
IC基板Aを接着組立てる方法、又は支持枠Bの枠内孔
にIC基板Aのウィックと対向板Cとのウィックとの連
結をとるために、有機繊維、ガラス繊維、セラミック繊
維等のウィック材を充填すること等の方法によるもので
ある。
The present invention provides a method for forming a green sheet having a wick structure, a method for sintering each component, and then assembling it by adhesion, or a support frame B.
A method of adhering and assembling the sintered IC board A by bonding and sintering the wick of the IC board A and the opposing board C in the main process, or attaching the wick of the IC board A and the opposing board C to the inner hole of the support frame B. In order to establish a connection with the material, a method such as filling a wick material such as organic fiber, glass fiber, or ceramic fiber is used.

以上のために本発明の製造方法は、焼結したフラットな
各基板が作成出来て、接着組立が容易であり、また接着
組立後に配線印刷、蒸着を行う場合や金属細線のボンデ
ィング溶接等も同等支障を生ぜず不良の発生が殆ど無く
なった。またヒートパイプ構造を従来構造より単純化出
来て工程の作業能率を向上し、併せて基板Aの熱放散性
をより高めることが出来、信頼性の高い均一な品質の製
品を安価に作成することが出来た。
For the above reasons, the manufacturing method of the present invention can create sintered flat substrates, making adhesive assembly easy, and is also suitable for wiring printing, vapor deposition, bonding welding of thin metal wires, etc. after adhesive assembly. There were no problems and almost no defects occurred. In addition, the heat pipe structure can be made simpler than the conventional structure, improving the work efficiency of the process, and at the same time, it is possible to further improve the heat dissipation performance of the substrate A, making it possible to produce products with high reliability and uniform quality at low cost. was completed.

以下、実施例につき第2図、第3図の斜視図をもとに詳
述するが、本発明の要旨を超えない範囲内において、こ
れに限定されない。
Hereinafter, embodiments will be described in detail based on the perspective views of FIGS. 2 and 3, but the present invention is not limited thereto without exceeding the gist of the present invention.

アルミナ含有量96%の泥漿を、転写面が毛細溝となる
様なポリエチレン性キャリアフィルム(サンビック社製
、No、400)上に、ドクターブレード工法でグリー
ンシートをキャスティングする。12時間自然乾燥後、
フィルムより剥離して剥離面に網目状の毛細溝が形成さ
れた厚さQ、5mmとQ、9mの2種類を成形した。
A green sheet is cast using a doctor blade method using a slurry with an alumina content of 96% on a polyethylene carrier film (manufactured by Sambic Corporation, No. 400) whose transfer surface forms capillary grooves. After 12 hours of natural drying,
Two types were molded: one with a thickness of Q, 5 mm, and one with a thickness of Q, 9 m, in which a net-like capillary groove was formed on the peeled surface after being peeled off from the film.

また別に一般使用されている平坦面を有するキャリアフ
ィルムにて、上記と同一泥漿にて両面平坦なグリーンシ
ートを厚さ0.3■議と0.9菖會の2種類を成形した
Separately, two types of green sheets with a thickness of 0.3 mm and a thickness of 0.9 mm were formed using the same slurry as above using a commonly used carrier film having a flat surface.

以上の毛細溝を片面に形成した厚さ0.6 tmと0.
9鶴シート及び両面平坦な厚さQ、3mmと0.9mm
シートを寸法120X60mmに裁断して各i枚ずつを
準備した。次に片面に毛細溝のある厚さ0.6鶴の平坦
面上にW金属粉末等で調製したペーストでIC基板の内
部配線をスクリーン印刷にて形成し、また両面平坦な厚
さ0.3wのシートに上記形成した内部配線との結線を
とるためのスルーホールと、その孔へ金属ペーストを孔
埋めし、そのシート上面にIC素子等の搭載部24と配
線回路部25を上記と同じ金属ペーストでスクリーン印
刷して形成した。この印刷した2枚を、上面がIC素子
等の搭載印刷面で下面が毛細溝形成面となるように溶剤
にて接着し、次にシート四隅の一隅にウィック液注入孔
となる2、2Φ謳の孔23を穿設した。これを樹脂抜き
後、非酸化雰囲気の1550℃中にて焼成し、寸法10
0 X 50 Xo、75 t*@0:)基板Aを得た
。図中21は図示されていない反対面の毛細溝である。
Thickness 0.6 tm and 0.6 tm with capillary grooves formed on one side.
9 Tsuru sheets and both sides flat thickness Q, 3mm and 0.9mm
The sheet was cut into a size of 120 x 60 mm, and each i sheet was prepared. Next, the internal wiring of the IC board was formed by screen printing on a 0.6 mm thick flat surface with capillary grooves on one side using a paste prepared with W metal powder, etc. A through hole for connection with the internal wiring formed above is formed in the sheet, and the hole is filled with metal paste, and a mounting part 24 for IC elements etc. and a wiring circuit part 25 are formed on the top surface of the sheet using the same metal as above. It was formed by screen printing with paste. These two printed sheets are glued together with a solvent so that the upper surface is the printed surface for mounting IC elements, etc., and the lower surface is the capillary groove forming surface. A hole 23 was drilled. After removing the resin, it was fired at 1550°C in a non-oxidizing atmosphere, and the size was 10.
0 x 50 Xo, 75 t*@0:) Substrate A was obtained. In the figure, 21 is a capillary groove on the opposite side (not shown).

前記裁断した片面に毛細溝のある厚さQ、9m@のシー
トを樹脂抜き後、酸化雰囲気の1550℃中【て焼成し
、寸法100X 50 Xo、75”mの対向板Cを得
た。図中218は毛細溝である。
After removing the resin from the cut sheet with a thickness of Q and 9 m @ having capillary grooves on one side, it was fired in an oxidizing atmosphere at 1550°C to obtain a counter plate C with dimensions of 100 x 50 xo and 75" m. Inside 218 is a capillary groove.

また前記の裁断した両面平坦な厚さQ、9mmシートの
外形寸法120X60mを内形寸法96×3611+1
に打抜きして、窓枠形状に形成し、その窓枠部分の所定
位置に7Φ鶴のウィンク材充填孔22となる孔を全部で
10ケ所に穿設した。これを樹脂抜き後、酸化値雰囲気
の1550’C中にて焼成し、外形寸法100 X 5
0 Xo、75  賞量で内形寸法76×26fiの支
持枠Bを得た。
In addition, the outer dimensions of the cut 9 mm sheet with a flat thickness of Q on both sides are 120 x 60 m, and the inner dimensions are 96 x 3611 + 1.
It was punched out to form a window frame shape, and a total of 10 holes were punched at predetermined positions in the window frame portion to serve as the wink material filling holes 22 of the 7Φ crane. After removing the resin from this, it was fired in an oxidation value atmosphere of 1550'C, and the external dimensions were 100 x 5.
0 Xo, 75 A support frame B with internal dimensions of 76 x 26 fi was obtained with the award amount.

前記作成した回路基板Aは、金属Au等の表面被覆を行
い、またウィンク液注入孔23位置に20X1.2Φ鶴
の銅バイブを半田付けした。
The surface of the circuit board A prepared above was coated with a metal such as Au, and a 20×1.2 Φ copper vibrator was soldered to the wink liquid injection hole 23 position.

以上、対向板Cの毛細溝21a形成面の外周端縁部にシ
リコン系樹脂接着剤を塗布して、その上に支持枠Bを重
ね接着し、温度50℃中にて乾燥□硬化した。次に支持
枠Bのウインク材充填孔22の10ケ所にガラス繊維を
充填し、その充填部を除いた支持枠Bの上面にシリコン
系樹脂接着剤を塗布して、その上にIC基板Aを重ねて
接着し、50℃中にて硬化接合した。
As described above, a silicone resin adhesive was applied to the outer peripheral edge of the capillary groove 21a forming surface of the opposing plate C, and the support frame B was layered and bonded thereon, and dried and cured at a temperature of 50°C. Next, 10 locations of the wink material filling holes 22 of the support frame B are filled with glass fibers, a silicone resin adhesive is applied to the upper surface of the support frame B except for the filled portions, and the IC board A is placed on top of the glass fibers. They were overlapped and bonded, and cured and bonded at 50°C.

次に真空脱気を行い、ウィック液を注入し、その注入管
26孔を半田にて密閉した。このヒートパイプ構造IC
基板上にシリコン半導体ICやコンデンサ等の電子部品
を実装して完成した。
Next, vacuum degassing was performed, wick liquid was injected, and the 26 holes of the injection tube were sealed with solder. This heat pipe structure IC
It was completed by mounting electronic components such as silicon semiconductor ICs and capacitors on the board.

以上は支持枠Bと対向板Cとを別々に焼結して接着組立
てたが、この両者を主工程で接着し、焼結後、焼結ずみ
のIC基板Aとを接着組立てる方法も変わりなく良好な
製品が得られた。
In the above, the support frame B and the opposing plate C were sintered separately and assembled together by bonding, but the method of bonding these two together in the main process and then bonding and assembling the sintered IC board A after sintering is also the same. A good product was obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来構造の斜視図であり、イ図はIC基板、口
図はヒートパイプ部である。第2図は本発明の分解斜視
図であり、そのA図はIC基板、B図は支持枠、0図は
対向板であり、第3図は組立斜視図である。 1・・・・・・IC基板、2.6・旧・・セラミック、
3.24・・・・・・素子搭載印刷部、4,9.25・
・・・・・配線印刷部、5・・・・・・ヒートパイプ部
、?、21゜21a・・・・・・毛細溝、8・・・・・
・突出支持部、IO・・・・・・穿設部分、41・・・
・・・内部空間、12.26・・・・・・金属パイプ、
13ガラス繊維、22・・・・・・ウィンク材充填孔、
23・・・・・・ウィック液注入孔第1図 第3図 第2図
FIG. 1 is a perspective view of a conventional structure, in which the A diagram shows an IC board and the B diagram shows a heat pipe section. Fig. 2 is an exploded perspective view of the present invention, in which Fig. A is an IC board, Fig. B is a support frame, Fig. 0 is a counter plate, and Fig. 3 is an assembled perspective view. 1...IC board, 2.6 Old...ceramic,
3.24...Element loading printing section, 4,9.25.
...Wiring printing section, 5...Heat pipe section, ? , 21゜21a... Capillary groove, 8...
・Protruding support part, IO...Drilling part, 41...
...inner space, 12.26...metal pipe,
13 glass fiber, 22...wink material filling hole,
23... Wick liquid injection hole Figure 1 Figure 3 Figure 2

Claims (1)

【特許請求の範囲】 1)板状ヒートパイプに、電子部品実装を施した基板を
設置して使用する方式のヒートパイプ構造IC基板の製
造方法において、片面にウィック構造を設けた電子部品
実装用IC基板Aと、該基板Aとの対向板Cと、その基
板Aと対向板Cとの間に介在するウィンク材充填孔を有
する支持枠Bとを別々に製作して焼成後、組立て接着す
るか、又は支持枠Bと対向板Cとを往工程で接着し、焼
成後、A基板を接着して製造することを特徴とするヒー
トパイプ構造IC基板の製造方法。 2)上記ウィフク材は、有機繊維、ガラス繊維、セラミ
ック繊維である特許請求の範囲第1項記載のヒートパイ
プ構造10基板の製造方法。 3)上記焼成後の接着は、有機又は無機接着剤、半田、
レーザ等の手段による接合である特許請求の範囲第1項
記載のヒートパイプ構造IC基板の製造方法。 4)上記基板材質は、アルミナ質セラミックス又はガラ
スセラミックスである特許請求の範囲第1項記載のヒー
トパイプ構造IC基板の製造方法。
[Claims] 1) A method for manufacturing an IC board with a heat pipe structure in which a board on which electronic components are mounted is installed on a plate-shaped heat pipe, in which a wick structure is provided on one side for mounting electronic components. An IC board A, a plate C facing the board A, and a support frame B having a wink material filling hole interposed between the board A and the board C are manufactured separately, and after firing, they are assembled and bonded. Alternatively, a method for manufacturing a heat pipe structure IC board, characterized in that the support frame B and the opposing plate C are bonded in an earlier step, and after firing, the A substrate is bonded. 2) The method for manufacturing a heat pipe structure 10 substrate according to claim 1, wherein the Wifuku material is organic fiber, glass fiber, or ceramic fiber. 3) The above-mentioned bonding after baking can be done using organic or inorganic adhesive, solder,
A method for manufacturing a heat pipe structure IC substrate according to claim 1, wherein the bonding is performed by means such as a laser. 4) The method for manufacturing a heat pipe structure IC substrate according to claim 1, wherein the substrate material is an alumina ceramic or a glass ceramic.
JP58027445A 1983-02-21 1983-02-21 Manufacture of heat pipe structure ic substrate Pending JPS59152652A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58027445A JPS59152652A (en) 1983-02-21 1983-02-21 Manufacture of heat pipe structure ic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58027445A JPS59152652A (en) 1983-02-21 1983-02-21 Manufacture of heat pipe structure ic substrate

Publications (1)

Publication Number Publication Date
JPS59152652A true JPS59152652A (en) 1984-08-31

Family

ID=12221310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58027445A Pending JPS59152652A (en) 1983-02-21 1983-02-21 Manufacture of heat pipe structure ic substrate

Country Status (1)

Country Link
JP (1) JPS59152652A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0622836A1 (en) * 1993-04-30 1994-11-02 Commissariat A L'energie Atomique Encapsulating process for electronic hybrid components enabled by spheres on a substrat

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0622836A1 (en) * 1993-04-30 1994-11-02 Commissariat A L'energie Atomique Encapsulating process for electronic hybrid components enabled by spheres on a substrat
FR2704691A1 (en) * 1993-04-30 1994-11-04 Commissariat Energie Atomique Process for coating hybrid electronic ball components on a substrate
US5496769A (en) * 1993-04-30 1996-03-05 Commissariat A L'energie Atomique Process for coating electronic components hybridized by bumps on a substrate

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