JPS59143351A - Film carrier with bump and manufacture thereof - Google Patents
Film carrier with bump and manufacture thereofInfo
- Publication number
- JPS59143351A JPS59143351A JP58016189A JP1618983A JPS59143351A JP S59143351 A JPS59143351 A JP S59143351A JP 58016189 A JP58016189 A JP 58016189A JP 1618983 A JP1618983 A JP 1618983A JP S59143351 A JPS59143351 A JP S59143351A
- Authority
- JP
- Japan
- Prior art keywords
- bump
- gold
- film carrier
- film
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 32
- 229910052737 gold Inorganic materials 0.000 claims description 32
- 239000010931 gold Substances 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 239000012790 adhesive layer Substances 0.000 abstract description 3
- 239000004593 Epoxy Substances 0.000 abstract description 2
- 239000004642 Polyimide Substances 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract description 2
- 229920000728 polyester Polymers 0.000 abstract description 2
- 229920001721 polyimide Polymers 0.000 abstract description 2
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 13
- 238000005530 etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 241000257465 Echinoidea Species 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49572—Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体素子とリードフレームあるいは外部基
板との接続に用いられるバンブ付フィルムキャリアとそ
の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a bumped film carrier used for connecting a semiconductor element to a lead frame or an external substrate, and a method for manufacturing the same.
（従来例の構成とその問題点）
一般に１半導体素子とリードフレームあるいは外部基板
との接続には、ワイヤボンディング、フィルムキャリア
、ビームリードおよびフリップチップなどの方式が用い
られているが、現在、最も広く用いられているのはワイ
ヤボンディング方式である。一方、電子機器は小型化お
よび高密度化が要求されていて、生産面においても高速
化および信頼性の向上が強く要求されている。(Conventional structure and its problems) In general, methods such as wire bonding, film carrier, beam lead, and flip chip are used to connect one semiconductor element to a lead frame or external board. Wire bonding is widely used. On the other hand, electronic devices are required to be smaller and more dense, and in terms of production, there is also a strong demand for faster speeds and improved reliability.
このような状況において、現在主流となっているワイヤ
ボンディング方式は上記の要求を十分に満たしていると
はいえ彦い。例えば、１チツプ当シのリード数は現在多
くても６ｏピン程度であるが、将来、１ｏｏ〜２００ピ
ン以上のものが多数使用され、その結果チップ上の接続
パッドは、現在の１００〜２００ Ａｍ角、１５０−２
００．ａｍピッチから数１０μｍ角、１００μｍピッチ
以下と々ることか予想され、このような場合、ワイヤボ
ンディング方式では対応が不可能となる。また、生産の
高速化の面から全自動ワイヤボンダーの導入が現在急速
に進められているが、半導体素子の多ビン化によってシ
リアルな動作であるワイヤボンディング方式では、１チ
ツプ当シのボンディング時間の短縮に限界がある。Under such circumstances, the currently mainstream wire bonding method does not fully satisfy the above requirements. For example, the number of leads per chip is currently about 60 pins at most, but in the future, many leads with 100 to 200 or more pins will be used, and as a result, the number of connection pads on a chip will be 100 to 200 Am. Corner, 150-2
00. It is expected that the pitch will be several tens of μm square or less than 100 μm pitch from the am pitch, and the wire bonding method will not be able to handle such cases. In addition, the introduction of fully automatic wire bonders is currently progressing rapidly in order to speed up production, but as the number of semiconductor devices increases, the wire bonding method, which operates serially, reduces the bonding time per chip. There are limits to shortening.
そこで、よシ高密度、より高速な接続方式としてフィル
ムキャリア方式が注目されている。このフィルムキャリ
ア方式は、高密度な実装が可能である点、ギヤングポン
ドであるためにピン数に関係なく高速ボンディングが可
能である点、製造の自動化が容易である点、接続強度が
ワイヤボンディング方式と比較して非常に強く信頼性が
高い点など、多くの長所を有するが、半導体素子の接続
用のアルミパッドに予めバンプを形成しだバンプ付半導
体素子を新たに製造し々ければならず、しかもバンプ付
半導体素子の入手が非常に困難であった０
そこで従来、フィルムキャリアのフィンガーリードをエ
ツチングによシ加工し、その先端にバンプとして突起を
形成したバンプ付フィルムキャリアが提案されていたが
、従来のバンプ付フィルムキャリアでは、突起の硬度の
関係でボンディング時に半導体素子が破損するなど、信
頼性の面で十分な性能が得られていなかった。Therefore, the film carrier method is attracting attention as a higher-density, higher-speed connection method. This film carrier method allows for high-density packaging, is a gigantic bond so high-speed bonding is possible regardless of the number of pins, is easy to automate manufacturing, and has superior connection strength compared to the wire bonding method. Although it has many advantages such as being extremely strong and reliable compared to other devices, it requires forming bumps in advance on aluminum pads for connecting semiconductor devices and then manufacturing new semiconductor devices with bumps. Moreover, it was extremely difficult to obtain semiconductor devices with bumps. Therefore, a bumped film carrier was proposed in which the finger leads of the film carrier were etched and projections were formed as bumps on the tips of the film carriers. Conventional film carriers with bumps have not been able to provide sufficient performance in terms of reliability, such as damage to semiconductor elements during bonding due to the hardness of the protrusions.
（発明の目的）
本発明は、上記従来例の欠点に鑑みてなされたもので、
バンプ付半導体素子を必要とせず、しかも接続特性にお
いては、バンプ付半導体素子にフィルムキャリアを接続
した場合と同等以上の高い信頼性を有するバンプ付フィ
ルムキャリアとその製造方法を提供するものである。(Object of the invention) The present invention has been made in view of the drawbacks of the above-mentioned conventional examples, and
To provide a bumped film carrier that does not require a bumped semiconductor element and has connection characteristics as high as or higher than that of a film carrier connected to a bumped semiconductor element, and a method for manufacturing the same.
（発明の構成）
上記目的を達成するために、本発明は、フィルムキャリ
アのフィンガーリードの先端部分に、平面基板に形成さ
れた錐状の穴上に載置された金球を熱圧着するとともに
、熱圧着時に平面基板の錐状の穴に金球を押圧して先端
の尖った錐状ノ金バンプに成形するものである。(Structure of the Invention) In order to achieve the above object, the present invention thermocompresses a gold ball placed on a conical hole formed in a flat substrate to the tip portion of a finger lead of a film carrier, and During thermocompression bonding, a gold ball is pressed into a conical hole in a flat substrate to form a conical gold bump with a pointed tip.
（実施例の説明）
以下、図面によυ本発明の実施例を詳細に説明する。第
１図は、本発明によるバング付フィルムキャリアの一実
施例の構成を示す図で、１は厚さ１２５μｍ程度のポリ
イミド、ポリエステルあるいはガラスエポキシからなる
絶縁フィルムで、半導体素子が接続される位置に開口部
を有し、その−表面に接着剤により厚さ３５μ哨の銅箔
が接着され、所定のパターンにエツチングされてフィン
ガーリード２が絶縁フィルム１の開口部に延在して形成
されている。このフィンガーリード２の先端部分に錐状
の金バンプ３が熱圧着されている。(Description of Embodiments) Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a diagram showing the structure of an embodiment of a film carrier with a bang according to the present invention. 1 is an insulating film made of polyimide, polyester, or glass epoxy with a thickness of about 125 μm, and is placed at a position where a semiconductor element is connected. A copper foil having a thickness of 35 μm is adhered to the surface of the opening with an adhesive, and is etched into a predetermined pattern to form a finger lead 2 extending into the opening of the insulating film 1. . A conical gold bump 3 is thermocompression bonded to the tip of the finger lead 2.
５−
また、第２図は、ボンディング位置にある本実施例と半
導体素子を示す図で、第１図と同一符号のものは同一の
ものを示している。第２図において、４は絶縁フィルム
１にフィンガーリード２を接着している接着剤層、５は
半導体素子、６は半導体素子５のアルミパッドでアル。5- Also, FIG. 2 is a diagram showing the present embodiment and the semiconductor element at the bonding position, and the same reference numerals as in FIG. 1 indicate the same components. In FIG. 2, 4 is an adhesive layer bonding finger leads 2 to insulating film 1, 5 is a semiconductor element, and 6 is an aluminum pad of semiconductor element 5.
上記の構成において、本実施例と半導体素子５との接続
は、半導体素子５に設けられた接続用のアルミパッド６
にフィンガーリード２の金バンプ３を熱圧着するもので
あるが、その際、アルミパッド６０表面に酸化膜が存在
するために、圧着時に酸化膜を破壊して清浄なアルミ表
面を露出させる必要があり、通常、酸化膜は圧着時の金
バンブ３の変形によって破壊されるので、金バンプ３の
アルミパッド６と接する面が平担であると酸化膜の破壊
は効率よく行なわれない。そこで本実施例は、金バンプ
３の形状を錐状にして、その尖った先端部をアルミパッ
ド３に圧着することにより、アルミパッド３の酸化膜を
効率よく破壊して、信頼性の高い接続が可能となる。In the above configuration, the connection between the present embodiment and the semiconductor element 5 is made by connecting an aluminum pad 6 provided on the semiconductor element 5.
The gold bumps 3 of the finger leads 2 are thermocompression bonded to each other, but since there is an oxide film on the surface of the aluminum pad 60, it is necessary to destroy the oxide film during the pressure bonding to expose the clean aluminum surface. Generally, the oxide film is destroyed by the deformation of the gold bump 3 during pressure bonding, so if the surface of the gold bump 3 in contact with the aluminum pad 6 is flat, the oxide film will not be destroyed efficiently. Therefore, in this embodiment, the shape of the gold bump 3 is made into a conical shape, and the sharp tip thereof is pressed onto the aluminum pad 3, thereby efficiently destroying the oxide film of the aluminum pad 3 and achieving a highly reliable connection. becomes possible.
６−
なお、錐状の金バンプ３は、第３図に示す行程に従って
形成される。第３図（ａ）において、７は金バンプ作製
用の平面基板として使用される主面が（１００）面のシ
リコンウェハーで、研磨されて十分な平面性を有してい
る。このシリコンウェハー７の主面に７オトレジスト８
を塗布し、フォトリソグラフィー技術を用いて半導体素
子のアルミパッドと同位置に窓を形成した後、異方向エ
ツチングを施すことにより、第３図（ｂ）に示すように
所定の位置に容易に高い精度で錐状の穴９を形成するこ
とができる。次に、第３図（ｃ）に示すように、フォト
レジストを除去した後、シリコンウニノー−７に設けら
れた錐状の穴９に金が接着し々いように、熱酸化法ある
いはＣＶＤ法によシ厚さ０．５〜１μｍ程度の酸化膜１
０をシリコンウニノ＼−７の表面に形成する。そして、
シリコンウニノ・−７の錐状の穴９の上に、重さ００８
〜１０μｇで錐状の穴９とほぼ同等の径を有する金球３
１を載置した後、第３図（ｄ）に示すように、フィルム
キャリアのフィンガーリード２を金球３′と位置合わせ
して、熱圧着ツール１１により押圧して、フィンガーリ
ード２に金球３′を熱圧着させるとともに１金球３′を
シリコンウェハー７の錐状の穴９内に圧入して錐状の金
バンプ３に変形させる。こうして、フィンガーリード２
に錐状の金バンプ３が形成される。6- Note that the conical gold bump 3 is formed according to the steps shown in FIG. In FIG. 3(a), 7 is a silicon wafer whose main surface is a (100) plane, which is used as a flat substrate for producing gold bumps, and has been polished to have sufficient flatness. 7 photoresist 8 on the main surface of this silicon wafer 7
After forming a window at the same position as the aluminum pad of the semiconductor element using photolithography technology, by performing etching in a different direction, the window can be easily etched into a predetermined position at a high height as shown in Figure 3(b). The conical hole 9 can be formed with precision. Next, as shown in FIG. 3(c), after removing the photoresist, the gold is deposited by thermal oxidation or CVD so that the gold adheres tightly to the conical hole 9 provided in the silicon uni-no-7. Oxide film 1 with a thickness of about 0.5 to 1 μm by method
0 is formed on the surface of silicon unino\-7. and,
On top of the cone-shaped hole 9 of Silicon Unino-7, a weight of 008
Gold ball 3 weighing ~10 μg and having approximately the same diameter as the conical hole 9
1, as shown in FIG. 3(d), align the finger leads 2 of the film carrier with the gold balls 3' and press them with the thermocompression bonding tool 11 to attach the gold balls to the finger leads 2. At the same time, the gold balls 3' are press-fitted into the conical holes 9 of the silicon wafer 7 to transform them into conical gold bumps 3. In this way, finger reed 2
A conical gold bump 3 is formed on the surface.
また、例えば５鰭角で６０パツドを有するＬＳＩを接続
するバンプ付フィルムキャリアは以下のように作られる
。まず、主面が十分に平担な（１００）面のシリコンウ
ェハーを用い、その主面にネガタイプのフォトレジスト
をスピンナーを用いて塗布Ｌ、ＬＳＩのパッドと同じパ
ターンのガラスマスクを用いて露光、現像を行う。この
ＬＳＩのパッドは１１２μｍ角、２５０μｍピッチであ
るので、ガラスマスクはＬＳＩのパッドと同位置に１２
２μｍ角の露光パターンを有している。次に、水酸化カ
リウムが２３４重量パーセント、水が６３３重量パーセ
ント、インプロピルアルコールが１３．３重量パーセン
トのエツチング液を用いてシリコンウニ・・−をエツチ
ングして四角錐状の穴を形成する。このエツチング液は
シリコンの結晶軸方向によってエツチング速度が異なり
、主面が（１００）面のシリコンウェハーを用いると、
上面に対して５４７度の角度の斜面を有する四角錐状の
穴を形成することができる。Further, a film carrier with bumps for connecting an LSI having, for example, 5 fin angles and 60 pads is made as follows. First, a silicon wafer with a sufficiently flat main surface (100) is used, a negative type photoresist is coated on the main surface using a spinner, and exposed using a glass mask with the same pattern as the LSI pad. Perform development. The pads of this LSI are 112 μm square and 250 μm pitch, so the glass mask is placed at the same position as the LSI pads.
It has an exposure pattern of 2 μm square. Next, the silicon sea urchin is etched using an etching solution containing 234% by weight of potassium hydroxide, 633% by weight of water, and 13.3% by weight of inpropyl alcohol to form a square pyramid-shaped hole. The etching speed of this etching solution varies depending on the crystal axis direction of the silicon, and when a silicon wafer with a (100) main surface is used,
A quadrangular pyramidal hole can be formed with a slope at an angle of 547 degrees with respect to the top surface.
そして、フォトレジストを除去した後、大気中にて１１
００℃で１０時間のベーキングを行い、シリコンウニ・
・−に５０００Ｘの５ｉ０２皮膜を形成する。その後、
径１００μｍの金球を四角錐状の穴に載置し、フィルム
キャリアのフィンガーリードをその金球上に位置合わせ
して熱圧着を行う。圧着条件は、圧力ｌｏｇ／リード、
温度４５０’Ｏ１加圧時間０５秒である。このようにし
て作製したバンプ付フィルムキャリアを、圧力６０ｇ／
リード、温度５００℃、加圧時間０５秒で前述のＬＳＩ
にボンディングを行うことにより、１リード当りの引張
強度２０〜４Ｑｇの強固な接続を得ることができる。After removing the photoresist, 11
Baked at 00℃ for 10 hours, silicone sea urchin
・A 5000X 5i02 film is formed on -. after that,
A gold ball with a diameter of 100 μm is placed in a square pyramid-shaped hole, and the finger leads of the film carrier are aligned over the gold ball to perform thermocompression bonding. The crimping conditions are pressure log/lead,
The temperature was 450'O1 and the pressurization time was 05 seconds. The film carrier with bumps produced in this way was heated at 60g/
The above-mentioned LSI with lead, temperature of 500℃, and pressurization time of 05 seconds
By performing bonding, it is possible to obtain a strong connection with a tensile strength of 20 to 4 Qg per lead.
なお、第３図において、金バンプ作製用の平面基板とし
てシリコンウェハー７を使用したが、これはガラスやア
ルミナなどでもよく、この場合、錐状の穴は超音波加工
によって形成し、その際、錐状の穴の位置は半導体素子
のアルミパッドの位９−
置と５μｍ以内の誤差で一致している必要がある。In FIG. 3, a silicon wafer 7 is used as a flat substrate for producing gold bumps, but it may also be made of glass, alumina, etc. In this case, the conical hole is formed by ultrasonic processing, and at that time, The position of the conical hole must match the position of the aluminum pad of the semiconductor element within an error of 5 μm.
また、ガラスやアルミナは金と非接着性を有するので、
全接着防止用の酸化膜は必要としない。In addition, since glass and alumina have non-adhesive properties with gold,
No oxide film is required to prevent total adhesion.
（発明の効果）
以上説明したように、本発明によれば、金バンプの形状
が錐状であるので、ボンディング時に効率よくアルミパ
ッドの酸化膜を効率よく破壊して、熱圧着が容易且つ確
実に行うことができるとともに、半導体素子のアルミパ
ッドの位置に合わせて高い精度で金バンクを形成するこ
とができるので、フィルムキャリアの多大な長所を生か
すことができ、電子機器の小型・高密度化および生産時
の高速化ならびに信頼性の向上を可能にするものである
。(Effects of the Invention) As explained above, according to the present invention, since the shape of the gold bump is conical, the oxide film of the aluminum pad is efficiently destroyed during bonding, making thermocompression bonding easy and reliable. In addition, it is possible to form gold banks with high accuracy in accordance with the position of aluminum pads of semiconductor devices, making it possible to take advantage of the great advantages of film carriers, making it possible to miniaturize and increase the density of electronic devices. This also makes it possible to speed up production and improve reliability.
第１図は、本発明によるバンプ付フィルムキャリアの一
実施例の斜視図、第２図は、本発明によるバンプ付フィ
ルムキャリアの一実施例および半導体素子のボンディン
グ時の配置を示す断面図、第３図は、本発明によるバン
プ付フィルムキャリー】〇−
アの製造方法の一実施例の工程図である。
１ ・・・・・・・・・絶縁フィルム、 ２ ・・・・
・・・・・フィンガーリード、 ３・・・・・・・金バ
ンプ、３′・・・・・・・・・金球、４ ・・・・・・
・接着剤層、 ５・・・・・・・半導体素子、６・・・
・・・・・・アルミパッド、 ７・・・・・ シリコン
ウェハー、 ９・・・・・・・錐状の穴、１１・・・・
・ 熱圧着ツール。
一１１＝
第１図
第２図FIG. 1 is a perspective view of an embodiment of a film carrier with bumps according to the present invention, and FIG. FIG. 3 is a process diagram of an embodiment of the method for manufacturing the bumped film carrier according to the present invention. 1...Insulating film, 2...
...Finger lead, 3...Gold bump, 3'...Gold ball, 4...
・Adhesive layer, 5... Semiconductor element, 6...
...Aluminum pad, 7...Silicon wafer, 9...Conical hole, 11...
・Thermocompression bonding tool. 11= Figure 1 Figure 2
Claims (4)
縁フィルムに設けられた開口部まで延在して形成された
複数本のリードと、該リードの先端部分に形成されたバ
ンブとからなり、前記バンブが金からなる錐状あるいは
その先端部分が錐状の突起物であることを特徴とするバ
ンブ付フィルムキャリア。(1) A plurality of leads are formed on the flexible insulating film and extend to an opening provided in the flexible insulating film, and a bump is formed at the tip of the lead. A film carrier with bumps, characterized in that the bumps have a conical shape made of gold or a tip thereof is a conical protrusion.
ることを特徴とする特許請求の範囲第（１）項記載のバ
ンブ付フィルムキャリア。(2) The bumped film carrier according to claim (1), wherein the bumps are made of 0.08 to 10 μg of gold.
置に錐状の穴を形成する工程と、前記錐状の穴にその開
口部の径とほぼ同等の径を有する金球を配置する工程と
、フィルムキャリアのリードを前記金球と位置合わせを
行った後に前記金球に熱圧着するとともに前記金球を錐
状に成形する工程とを有することを特徴とするバンブ付
フィルムキャリアの製造方法。(3) A step of forming a conical hole on a flat substrate at the same position as the connection pad of the semiconductor element, and a step of arranging a gold ball having a diameter approximately equal to the diameter of the opening in the conical hole. A method for manufacturing a film carrier with bumps, comprising the steps of: aligning the leads of the film carrier with the gold balls, then thermocompressing them to the gold balls, and forming the gold balls into a conical shape. .
ことを特徴とする特許請求の範囲第（３）項記載のバン
ブ付フィルムキャリアの製造方法。(4) The method for manufacturing a bumped film carrier according to claim (3), wherein the flat substrate is made from a silicon wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58016189A JPS59143351A (en) | 1983-02-04 | 1983-02-04 | Film carrier with bump and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58016189A JPS59143351A (en) | 1983-02-04 | 1983-02-04 | Film carrier with bump and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59143351A true JPS59143351A (en) | 1984-08-16 |
Family
ID=11909565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58016189A Pending JPS59143351A (en) | 1983-02-04 | 1983-02-04 | Film carrier with bump and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59143351A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5109270A (en) * | 1989-04-17 | 1992-04-28 | Matsushita Electric Industrial Co., Ltd. | High frequency semiconductor device |
-
1983
- 1983-02-04 JP JP58016189A patent/JPS59143351A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5109270A (en) * | 1989-04-17 | 1992-04-28 | Matsushita Electric Industrial Co., Ltd. | High frequency semiconductor device |
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