JPS59139033A - Photomask blank - Google Patents
Photomask blankInfo
- Publication number
- JPS59139033A JPS59139033A JP58012904A JP1290483A JPS59139033A JP S59139033 A JPS59139033 A JP S59139033A JP 58012904 A JP58012904 A JP 58012904A JP 1290483 A JP1290483 A JP 1290483A JP S59139033 A JPS59139033 A JP S59139033A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide
- photomask blank
- chlorine
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 claims abstract description 15
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000460 chlorine Substances 0.000 claims abstract description 9
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 9
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 8
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 229910052738 indium Inorganic materials 0.000 claims abstract description 4
- 229910052742 iron Inorganic materials 0.000 claims abstract 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract 3
- 229910052702 rhenium Inorganic materials 0.000 claims abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract 3
- 229910052725 zinc Inorganic materials 0.000 claims abstract 3
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 3
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical class [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 239000011133 lead Substances 0.000 claims 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 230000003449 preventive effect Effects 0.000 abstract 3
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 27
- 239000007789 gas Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 241000894007 species Species 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はフォトマスクブランクに関し、より詳しくはプ
ラズマエツチング用のフォトマスクブランクに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to photomask blanks, and more particularly to photomask blanks for plasma etching.
従来、この種のフォトマスクブランクとしてｔま、ガラ
ス基板上にタンタル薄膜（膜厚：約１０００人）を形成
し、そのタンタル薄膜上にフォトレジスト（膜厚：約５
０００人）を塗布したものが知られて（Ａる。このブラ
ンクは、露光、現像及びエッチングを行い、タンタル薄
膜上に所定のレジストパターンを形成した後、平行平板
型又は円筒型のプラズマエツチング装置の槽内に挿入し
、チャンバー内を一度真空にして、ＣＦ４ガスを導入す
る。そして、ラジオ波（通常１３．５１３ Ｍｌ−１２
＞をかけることにより、プラズマを発生させて、露出さ
れた部分のタンタル薄膜がエツチングされて、レジスト
パターン部分のタンタル薄膜を残し、所定の遮光性パタ
ーンを形成したフォトマスクを得ていた。Conventionally, as a photomask blank of this type, a tantalum thin film (thickness: approximately 1,000 mm) was formed on a glass substrate, and a photoresist (film thickness: approximately 5 mm) was formed on the tantalum thin film.
000 people) is known (A). After this blank is exposed, developed and etched to form a prescribed resist pattern on the tantalum thin film, it is processed using a parallel plate type or cylindrical plasma etching device. Once the chamber is evacuated, CF4 gas is introduced.Then, radio waves (usually 13.513 Ml-12
>, plasma was generated and the exposed portion of the tantalum thin film was etched away, leaving the tantalum thin film in the resist pattern portion, to obtain a photomask in which a predetermined light-shielding pattern was formed.
しかしながら、このフォトマスクは、微細パターンの静
電破壊を起こしたり、あるいは被転写物との間で多重反
射を起こして、パターン精度を低下させる欠点があった
。それがため、微細加工性及び制御性等に優れたプラズ
マエツチングが紹介されていながら、プラズマエツチン
グ用のフォトマスクブランクが未開発であった。However, this photomask has the drawback of causing electrostatic damage to the fine pattern or causing multiple reflections with the transferred object, reducing pattern accuracy. For this reason, although plasma etching, which has excellent microprocessability and controllability, has been introduced, a photomask blank for plasma etching has not yet been developed.
本発明の目的は、上記した欠点を除去し、微細パターン
の静電破壊を防止し、被転写物との間での多重反射を防
止した、塩素系ガスを用いた反応性イオンエツチング等
のプラズマエツチング用）４トマスクブランクを提供す
ることである。The purpose of the present invention is to eliminate the above-mentioned drawbacks, prevent electrostatic damage to fine patterns, and prevent multiple reflections with the transferred material by using plasma such as reactive ion etching using chlorine-based gas. The purpose of the present invention is to provide four mask blanks (for etching).
このような目的を達成させるため、本発明は、塩素系ガ
スのプラズマ種に対して耐性のある透明導電膜と、同プ
ラズマ種に対してエツチングされやずい遮光性金属膜及
び反射防止膜を見い出し、これらの膜をガラス基板上に
成膜することにより構成されている。In order to achieve these objectives, the present invention has discovered a transparent conductive film that is resistant to chlorine-based gas plasma species, and a light-shielding metal film and an antireflection film that are resistant to etching by the plasma species. , is constructed by forming these films on a glass substrate.
以下、本発明を実施例図面を参照して説明する。Hereinafter, the present invention will be explained with reference to embodiment drawings.
第１図に示すように、透明なアルミノボロシリケートガ
ラス基板（（株）保谷硝子製：ＬＥ−３０＞等から製作
されたガラス基板１上に、インジウム金属をターゲット
として反応性スパッタリング法により酸化インジウム＜
Ｉ ｎ、ｏ３）の透明導電膜（膜厚：約３００人）２
を成膜し、その上にゲルマニウムをターゲットとしてス
パッタリング法によりゲルマニウム（Ｇｅ ）の遮光性
金属膜（膜厚：約１３００人）３を成膜し、更にその上
に石英をターゲットとして反応性スパッタリング法によ
り二酸化シリコン（ＳｉＯ２）の反射防止膜（膜厚：約
７００人）４を成ＩＩ美してフォトマスクブランクを製
作した。As shown in FIG. 1, indium oxide is deposited on a glass substrate 1 made of a transparent aluminoborosilicate glass substrate (manufactured by Hoya Glass Co., Ltd.: LE-30) by reactive sputtering using indium metal as a target. <
In, o3) transparent conductive film (film thickness: approx. 300 people) 2
A light-shielding metal film (thickness: approx. 1,300 layers) of germanium (Ge) 3 was formed on top of it by sputtering using germanium as a target, and then a reactive sputtering method using quartz as a target. A photomask blank was manufactured by forming an antireflection film (thickness: about 700 layers) of silicon dioxide (SiO2).
このフォトマスクブランクの分光反射率は、波長４３０
ｎｌｌｌの光に対して１５％であった。The spectral reflectance of this photomask blank is at wavelength 430.
It was 15% for nllll light.
このフォトマスクブランクは、第２図に示すように、先
ずフォトレジスト（膜厚：約５０００Ａ ＞ ５を塗布
しく同図（ａ））、露光、現像を行って、１μｍ程度の
レジストパターン５１を作成しく同図（ｂ））、これを
ＣＣｌ２４ガスを用いて反応性イオンエツチングを行う
ことにより、レジストパターン５１のない部分の露出さ
れた二酸化シリコン膜４とゲルマニウム躾３をエツチン
グして反射防止パターン４１と遮光性パターン３１を形
成した（同図（Ｃ））。ここで、酸化インジウム膜２の
存在を確認するために、０２プラズマ中で、レジストパ
ターン５１を灰化し、再びＣＣＵ４Ｃｌ３ガス又反応性
イオンエツチングを行うことにより、反射防止パターン
４１と遮光性パターン３１を全てエツチングしたく同図
（ｄ〉）。このときの酸化インジウム膜２のシート抵抗
を測定した結果、１．５にΩ／口程度の導電性を確保し
ていることが判明した。As shown in FIG. 2, this photomask blank is first coated with a photoresist (film thickness: approx. 5000A>5 (FIG. 2(a)), exposed and developed to create a resist pattern 51 of approximately 1 μm. (b)), by performing reactive ion etching using CCl24 gas, the exposed silicon dioxide film 4 and germanium film 3 where there is no resist pattern 51 are etched to form an anti-reflection pattern 41. A light-shielding pattern 31 was formed (FIG. 3(C)). Here, in order to confirm the presence of the indium oxide film 2, the resist pattern 51 is ashed in 02 plasma, and the anti-reflection pattern 41 and the light-shielding pattern 31 are removed by performing CCU4Cl3 gas or reactive ion etching again. I want to etch everything (d). As a result of measuring the sheet resistance of the indium oxide film 2 at this time, it was found that the conductivity was approximately 1.5 Ω/hole.
以上のように、本発明によれば、塩素系ガスのプラズマ
種に対してエツチングされやすい遮光性金属及び反射防
止膜用酸化物をマスク材として、エツチングされにくい
酸化物を透明導電膜としてそれぞれ使用することにより
、塩素系ガスによるプラズマエツチングによって製作さ
れるフォトマスクについて帯電防止効果及び反射防止効
果を得ることができる。As described above, according to the present invention, a light-shielding metal and an oxide for antireflection film, which are easily etched by chlorine-based gas plasma species, are used as mask materials, and an oxide that is difficult to be etched is used as a transparent conductive film. By doing so, it is possible to obtain an antistatic effect and an antireflection effect on a photomask manufactured by plasma etching using chlorine gas.
上記実施例では、透明導電膜と遮光性金属膜と反射防止
膜の３層膜を形成したが、そのうち透明導電膜と遮光性
金属膜から成る２層のものは静電破壊防止のフォトマス
クブランクとして使用することができ、また、遮光性金
属膜と反射防止膜から成る２層のものは反射防止のフォ
トマスクブランクとして使用することができる。In the above example, a three-layer film consisting of a transparent conductive film, a light-shielding metal film, and an anti-reflection film was formed, but the two-layer film consisting of a transparent conductive film and a light-shielding metal film was used as a photomask blank to prevent electrostatic damage. Furthermore, a two-layered mask consisting of a light-shielding metal film and an antireflection film can be used as an antireflection photomask blank.
また、他の実施例としては、本発明に係る透明導電膜と
して酸化インジウムの他に酸化鉄（Ｆｅ３０４ン、酸化
レニウム（Ｒｅｚ０７） 、１１ｆ化鉛（Ｐ ｂｓＯＪ
、酸化亜鉛（Ｐｂ３０＋）、酸化ニッケル（Ｎｉ Ｏ）
及び酸化コバルト（Ｃｏ Ｏ）等を使用することができ
、遮光性金属膜としてゲルマニウムの他にシリコン＜Ｓ
ｉ＞、アンチモン（Ｓｂ ）及び金（ＡＵ）を使用する
ことができ、反射防止膜として二酸化シリコンの他に酸
化ゲルマニウム（Ｇｅ ０２ ）及び酸化アンチモン（
Ｓ ｂｚＯ＞）等を使用することができ、塩素系ガスと
してＣＣＱ＋の他にＣｌ２ｚ、ＢＣＱ３、ＣＨ２ＯＣＱ
ｓ等及びそれらの混合ガス又は前記塩素系ガスに酸素ガ
スを混合したものを使用することができる。更に、以上
の透明導電膜と反射防止膜は、所定の膜厚をもって１層
で形成されるが、列挙された各酸化物を多層形成しても
にい。In addition, as another example, in addition to indium oxide, iron oxide (Fe304), rhenium oxide (Rez07), 11f lead oxide (P bsOJ
, zinc oxide (Pb30+), nickel oxide (NiO)
and cobalt oxide (CoO), etc. In addition to germanium, silicon<S
i>, antimony (Sb) and gold (AU) can be used, and in addition to silicon dioxide, germanium oxide (Ge 02 ) and antimony oxide (
In addition to CCQ+, Cl2z, BCQ3, CH2OCQ can be used as chlorine gas.
s, a mixed gas thereof, or a mixture of the chlorine-based gas and oxygen gas can be used. Furthermore, although the transparent conductive film and the antireflection film described above are formed as a single layer with a predetermined thickness, it is also possible to form multiple layers of each of the listed oxides.
以上の通り、本発明によれば、塩素系ガスによるプラズ
マエツチング用のフォトマスクブランクを実現したこと
により、その実用的な価値は多大である。As described above, according to the present invention, a photomask blank for plasma etching using chlorine-based gas has been realized, which has great practical value.
第１図は本発明による実施例を示すフォトマスクブラン
クの概略断面図、第２図は前実施例のフォトマスクブラ
ンクを使用した塩素系ガスによるプラズマエツチングに
よって製作したフォトマスクの概略断面図である。FIG. 1 is a schematic sectional view of a photomask blank showing an embodiment according to the present invention, and FIG. 2 is a schematic sectional view of a photomask manufactured by plasma etching with chlorine gas using the photomask blank of the previous embodiment. .
Claims (1)
ォトマスクブランクにおいて、ガラス基板上にシリコン
、ゲルマニウム、アンチモン及び金のうら何れか１つを
遮光性金属膜として成膜し、かつ前記遮光性金属膜上に
シリコン、ゲルマニウム及びアンチモンの各酸化物のう
ち少くとも１層を反射防止膜として成膜したことを特徴
とするフォトマスクブランク。 （２） 塩素系ガスを用いたプラズマエツチング用のフ
ォトマスクブランクにおいて、ガラス基板上に鉄、イン
ジウム、レニウム、鉛、亜鉛、ニッケル及びコバルトの
各酸化物のうち少くとも１層を透明導電膜として成膜し
、かつ前記透明導電股上にシリコン、ゲルマニウム、ア
ンチモン及び金のうち何れか１つを遮光性金属膜として
成膜したことを特徴とするフォトマスクブランク。 （３） 塩素系ガスを用いたプラズマエツチング用のフ
ォトマスクブランクにおいて、ガラス基板上に鉄、イン
ジウム、レニウム、鉛、亜鉛、ニッケル及びコバルトの
各酸化物のうち少くとも１層を透明導電膜として成膜し
、かつ前記透明導電Ｈ養土にシリコン、ゲルマニウム、
アンチモン及び金のうち何れか１つを遮光性金属膜とし
て成膜し、かつ前記遮光性金属膜上にシリコン、ゲルマ
ニウム及びアンチモンの各酸化物のうち少くとも１層を
反射防止膜として成膜したことを特徴とするフォトマス
クブランク。[Claims] H1) In a photomask blank for plasma etching using chlorine gas, one of silicon, germanium, antimony, and gold is formed as a light-shielding metal film on a glass substrate. and at least one layer of silicon, germanium, and antimony oxides is formed as an antireflection film on the light-shielding metal film. (2) In a photomask blank for plasma etching using chlorine-based gas, at least one layer of oxides of iron, indium, rhenium, lead, zinc, nickel, and cobalt is formed as a transparent conductive film on a glass substrate. A photomask blank characterized in that a film is formed on the transparent conductive crotch, and one of silicon, germanium, antimony, and gold is formed as a light-shielding metal film. (3) In a photomask blank for plasma etching using chlorine-based gas, at least one layer of oxides of iron, indium, rhenium, lead, zinc, nickel, and cobalt is formed as a transparent conductive film on a glass substrate. Silicon, germanium,
Either one of antimony and gold was formed as a light-shielding metal film, and at least one layer of silicon, germanium, and antimony oxide was formed on the light-shielding metal film as an antireflection film. A photomask blank characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58012904A JPS59139033A (en) | 1983-01-31 | 1983-01-31 | Photomask blank |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58012904A JPS59139033A (en) | 1983-01-31 | 1983-01-31 | Photomask blank |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59139033A true JPS59139033A (en) | 1984-08-09 |
| JPS6237382B2 JPS6237382B2 (en) | 1987-08-12 |
Family
ID=11818349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58012904A Granted JPS59139033A (en) | 1983-01-31 | 1983-01-31 | Photomask blank |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59139033A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60132323A (en) * | 1983-12-21 | 1985-07-15 | Hitachi Ltd | Mask for x-ray exposure |
| WO2006027928A1 (en) * | 2004-09-10 | 2006-03-16 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, photomask and method for producing those |
| JP2016009744A (en) * | 2014-06-24 | 2016-01-18 | 凸版印刷株式会社 | Reflective mask and reflective mask blank |
| EP3214496A1 (en) | 2016-03-02 | 2017-09-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for preparing a photomask |
| KR20170102811A (en) | 2016-03-02 | 2017-09-12 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Photomask blank and method for preparing photomask |
-
1983
- 1983-01-31 JP JP58012904A patent/JPS59139033A/en active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60132323A (en) * | 1983-12-21 | 1985-07-15 | Hitachi Ltd | Mask for x-ray exposure |
| WO2006027928A1 (en) * | 2004-09-10 | 2006-03-16 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, photomask and method for producing those |
| US7618753B2 (en) | 2004-09-10 | 2009-11-17 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, photomask and method for producing those |
| JP2016009744A (en) * | 2014-06-24 | 2016-01-18 | 凸版印刷株式会社 | Reflective mask and reflective mask blank |
| EP3214496A1 (en) | 2016-03-02 | 2017-09-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for preparing a photomask |
| KR20170102811A (en) | 2016-03-02 | 2017-09-12 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Photomask blank and method for preparing photomask |
| US10678125B2 (en) | 2016-03-02 | 2020-06-09 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for preparing photomask |
| US11327393B2 (en) | 2016-03-02 | 2022-05-10 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for preparing photomask |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6237382B2 (en) | 1987-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201020685A (en) | Mask blank and method of manufacturing a transfer mask | |
| US4873163A (en) | Photomask material | |
| JPS61173251A (en) | Production of photomask | |
| KR101287708B1 (en) | Multi-gray scale photomask, photomask blank, method of manufacturing multi-gray scale photomask and pattern transfer method | |
| JPS5851412B2 (en) | Microfabrication method for semiconductor devices | |
| US4464459A (en) | Method of forming a pattern of metal elements | |
| JPS59139033A (en) | Photomask blank | |
| JPS6252551A (en) | Photomask material | |
| JP2788649B2 (en) | Photomask blank and photomask | |
| JPS649617B2 (en) | ||
| KR101182082B1 (en) | Method of manufacturing multi-gray scale photomask and multi-gray scale photomask | |
| JPS59139034A (en) | Photomask blank | |
| JP3289606B2 (en) | Blank for halftone type phase shift mask and halftone type phase shift mask | |
| JPH0463349A (en) | Photomask blank and photomask | |
| JPH02139972A (en) | Manufacture of semiconductor device | |
| JPS6280655A (en) | Photomask blanks and photomasks | |
| JP2500526B2 (en) | Photomask blanks and photomasks | |
| JPH0434436A (en) | Photomask blank and photomask | |
| JPH0418557A (en) | Photomask blank, photomask, and photomask manufacturing method | |
| JPH03182752A (en) | How to create an exposure mask | |
| JPH01173718A (en) | Photomask and manufacture thereof | |
| KR20230047004A (en) | Photomask blank, photomask, method for manufacturing photomask, and method for manufacturing display device | |
| JPS63202748A (en) | Photomask material | |
| JPS5612736A (en) | Formation of fine chromium pattern | |
| JPS56156982A (en) | Production of overlay for planar type magnetic bubble element |