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JPS5913618A - Method for purifying silicon tetrachloride - Google Patents

Method for purifying silicon tetrachloride

Info

Publication number
JPS5913618A
JPS5913618A JP12103682A JP12103682A JPS5913618A JP S5913618 A JPS5913618 A JP S5913618A JP 12103682 A JP12103682 A JP 12103682A JP 12103682 A JP12103682 A JP 12103682A JP S5913618 A JPS5913618 A JP S5913618A
Authority
JP
Japan
Prior art keywords
silicon tetrachloride
tetrachloride
nitrile compound
silicon
titanium tetrachloride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12103682A
Other languages
Japanese (ja)
Other versions
JPS6028762B2 (en
Inventor
Haruo Okamoto
岡本 治男
Mikio Endo
幹夫 遠藤
Kazuo Kamiya
和雄 神屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP12103682A priority Critical patent/JPS6028762B2/en
Publication of JPS5913618A publication Critical patent/JPS5913618A/en
Publication of JPS6028762B2 publication Critical patent/JPS6028762B2/en
Expired legal-status Critical Current

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  • Silicon Compounds (AREA)

Abstract

PURPOSE:To obtain easily silicon tetrachloride contg. no impurity by purification by adding a nitrile compound represented by a specified rational formula to silicon tetrachloride contg. titanium tetrachloride as an impurity and by carrying out distillation. CONSTITUTION:A nitrile compound represented by a rational formula RCN (where R is a univalent org. group selected from alkyl, alkenyl, aryl and heterocyclic groups) is added to silicon tetrachloride to form a complex salt together with titanium tetrachloride contained in the silicon tetrachloride as an impurity, and after settling the complex salt as a precipitate, atmospheric distillation is carried out. The amount of the nitrile compound to be added is equal to or larger than the amount of the contained titanium tetrachloride, preferably about 4-10 times the amount by mole. CH3CN, CH2=CHCN or C6H5CN is especially suitable for use as the nitrile compound.

Description

【発明の詳細な説明】 本発明は四塩化けい素の精製方法、特には四塩化けい素
中に含有される四塩化チタンの除去方法に関するもので
ある。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for purifying silicon tetrachloride, and particularly to a method for removing titanium tetrachloride contained in silicon tetrachloride.

四塩化けい素が金1契けい素と塩化水素との反応による
トリグロロシラン(5iHO1,)の副生物として取得
されること、  トリグロ口νランの水素還元による半
導体用けい素の生産時において多量に副生されることは
よく知られたところであり、このようにして生産された
四塩化けい累は工業的にはこれを酸水素焔中で熱分解ま
たは加水分解させてシリカ微粉末として、各種工業にお
いて使用される充填剤とするか、あるいはそれを製造原
料として合成石英とするという用途に使用されている。
Silicon tetrachloride is obtained as a by-product of triglorosilane (5iHO1,) through the reaction of gold-containing silicon and hydrogen chloride, and is produced in large quantities as a by-product during the production of silicon for semiconductors by hydrogen reduction of triglosilane. It is well known that silica tetrachloride produced in this way is thermally decomposed or hydrolyzed in an oxyhydrogen flame to form fine silica powder, which is used in various industries. It is used either as a filler or as a raw material for manufacturing synthetic quartz.

しn1し、この四塩化けい素中cH原料とされる<i/
がけい素中に不純物として含まれている金脂チダンの塩
化物である四塩化チタン(Ti014)が不可避的に含
有されており、この虜に金韓けい素中に含まれている金
属チタン量によって相違するが。
<i/
Titanium tetrachloride (Ti014), which is a chloride of titanium titanium contained in silicon as an impurity, is unavoidably contained, and the amount of metallic titanium contained in silicon is unavoidable. It varies depending on the situation.

通常四塩化けい素中にfilOPPbから数百PPI)
宮まれている。そして、この四塩化チタンは沸点が13
64℃であり、四塩化けい素の沸点が57.6℃である
ことカ1らこれ1l−j:精製を目的とする四塩化けい
素の蒸溜によってその大部分を除去することができるけ
れども、その含有量が微量であるだけにこれをIPPb
以下とすることは難しく、したがってこの種の四塩化け
い素から製られるシリカ微粉末、合成石英中に微けの四
塩化チタンが含有されることは不可避的なものとされて
いる。
Usually several hundred PPI from filOPPb in silicon tetrachloride)
It is worshiped. And this titanium tetrachloride has a boiling point of 13
64°C, and the boiling point of silicon tetrachloride is 57.6°C. (1) Although most of silicon tetrachloride can be removed by distillation for the purpose of purification, Since the content is very small, this is IPPb.
It is difficult to achieve the following, and therefore, it is considered inevitable that fine particles of titanium tetrachloride are contained in fine silica powder and synthetic quartz made from this type of silicon tetrachloride.

し力・し、この四塩化けい累から製造される合成石英中
にこの四塩化チタン力)ら生成される酸化チタン(Ti
e、)が固定されると、その遠紫外領域における紫外線
の透過率が著しく減少し、合成石英の特徴である紫外線
透過率が減殺されるという不利が生じ、例えば原料ガス
としての四塩化けい素中に四塩化チタンがl ppm 
存在するとこの合成石英取をファインリングラフイー用
のマスク基板として使用した場合の200 nm にお
ける紫外線透過率が四塩化チタンが全く存在しない場合
にくらべてそのl/3以下になってしまうという不利が
与えられる。
Titanium oxide (Ti) produced from this titanium tetrachloride is contained in synthetic quartz produced from this silicon tetrachloride.
e,) is fixed, the transmittance of ultraviolet rays in the deep ultraviolet region is significantly reduced, resulting in the disadvantage that the ultraviolet transmittance, which is a characteristic of synthetic quartz, is reduced.For example, silicon tetrachloride as a raw material gas Contains 1 ppm of titanium tetrachloride.
If titanium tetrachloride is present, there is a disadvantage that the ultraviolet transmittance at 200 nm when this synthetic quartz is used as a mask substrate for fine ring raying is less than 1/3 of that when titanium tetrachloride is not present at all. Given.

本発明はこのような不利を解決することのできる四塩化
チタンめ除去を目的とした四塩化けい素の精製方法に関
するものであり、これは四塩化けい素に示性式RON 
(こ\にRはアルキル基、アルケニル基−アリール基、
ヘテロ環基力1ら選ばれる1価の有機基)で示されるニ
トリル化合物を添加し、ついで蒸留することを特徴とす
るものである。
The present invention relates to a method for refining silicon tetrachloride for the purpose of removing titanium tetrachloride, which can overcome such disadvantages, and this invention relates to a method for purifying silicon tetrachloride for the purpose of removing titanium tetrachloride.
(R is an alkyl group, an alkenyl group-aryl group,
The method is characterized in that a nitrile compound represented by a heterocyclic group (monovalent organic group selected from 1) is added, and then distilled.

これを説明すると、本発明者らは四塩化けい素中に存在
する四塩化チタンの除去方法について種々検討の結果、
四塩化けい素にニトリル化合物を添加すると、このニト
リル化合物は四塩化けい累とは殆んど反応しないが四塩
化チタンとは選択的に常温で容易に反応して錯体を形成
し、これが黄色の沈澱物となることを見出し、これにつ
いてさらに検討を進めた結果、この錯体が四塩化けい素
の沸点である57.6℃においても分解しないので、つ
いでこの四塩化けい素を蒸留すれば四塩化チタンの含有
量をppb以下とした四塩化けい素が容易に得られるこ
とを確認して本発明を完成させた。
To explain this, the present inventors have conducted various studies on methods for removing titanium tetrachloride present in silicon tetrachloride.
When a nitrile compound is added to silicon tetrachloride, this nitrile compound hardly reacts with silicon tetrachloride, but reacts selectively and easily with titanium tetrachloride at room temperature to form a complex, which produces a yellow color. After further investigation, we found that this complex does not decompose even at 57.6°C, which is the boiling point of silicon tetrachloride. The present invention was completed by confirming that silicon tetrachloride with a titanium content of ppb or less can be easily obtained.

本発明の方法の処理対象とされる四塩化けい素にどのよ
うなものでもよく、特にこれを限定する必要はない。し
たがって−これに金)虜けい素と塩化水素との直接反応
によって得られたものでもよいし、あるいはトリグロ口
νランの水素還元による半導体用けい素の製造時に副生
ずるものであってもよい。
Any type of silicon tetrachloride may be used as the treatment target in the method of the present invention, and there is no need to specifically limit it. Therefore, it may be obtained by a direct reaction between silicon and hydrogen chloride, or it may be a by-product during the production of silicon for semiconductors by hydrogen reduction of triglyceride.

この四塩化けい素に添加される二) IJシル類示性式
RCN(こ′>にRはアルキル基、アルケニル基−アリ
ール基、ヘテロ環基力)ら選択される1価の冶機基〕で
示されるものであれはよく、これには例えはアセトニト
リル(OH,ON)、  ブチロニトリル(OHs O
H! ON )、ブチロニトリルC0Ha(O:Hz)
* ON )のような脂肪族飽和ニトリル。
Added to this silicon tetrachloride is a monovalent metallurgical group selected from the following formula RCN (wherein R is an alkyl group, an alkenyl group-aryl group, or a heterocyclic group). For example, acetonitrile (OH, ON), butyronitrile (OHs O
H! ON), butyronitrile COHa (O:Hz)
*Aliphatic saturated nitriles such as ON).

アグリロニトリル(OH,=CI!HON ]、グロト
ノニトリル(OH,OH= OHON  )のような脂
肪族不飽和ニトリル、ベンゾニトリル(0aHIION
 ) 、ケイ皮酸ニトリル〔C・HIIOH= 0HO
N )のような芳香族ニトリル、i/アンピリジン(O
−ON)のような複素環ニトリルなどが挙げられる。し
かしこれらのなかでは、四塩化チタンとの反応性がよい
こと、四塩化チタンとの反応生成物の沸点が四塩化けい
素の沸点とできるだけ離れていること、毒性が少なく取
扱いが簡単で、金庫類およびプラスチック類に対して不
活性であること、さらには四塩化けい素に対し全く不活
性であることという条件を満だすものであることが好ま
しく、この観点刀λら工、−をノ 業的にはアセトニトリC選択することがよい。
Aliphatically unsaturated nitriles such as agrilonitrile (OH,=CI!HON ), grotononitrile (OH,OH=OHON ), benzonitrile (0aHIION
), cinnamate nitrile [C・HIIOH= 0HO
Aromatic nitriles such as i/ampyridine (O
Examples include heterocyclic nitriles such as -ON). However, among these, it has good reactivity with titanium tetrachloride, the boiling point of the reaction product with titanium tetrachloride is as far as possible from the boiling point of silicon tetrachloride, it is less toxic, it is easy to handle, and it is safe. It is preferable that the material satisfies the conditions of being inert to metals and plastics, and furthermore being completely inactive to silicon tetrachloride. In particular, acetonitrile C is preferably selected.

この二) IJル化合物による四塩化けい素の処理は、
これらのニトリル化合物と四塩化チタンの反応が常温で
進行することがら常温で液状である四塩化けい素中にこ
のニトリル化合物を添加し、攪拌するだけでよく、こね
によって生成した四塩化チタンとニトリル化合物の錯塩
ばこの液中に黄色の沈識となって沈降するので、ついで
この四塩化けい素を常圧下に蒸留すれは容易にこれを四
塩化チタンを含まないものとして精製することができる
。なお、この場合におけるニトリル化合物の添11[1
用は精製する前の四塩化けい素中に含まれている四塩化
チタンのモル潰に対し少なくとも同一モル用とする必要
があυ、これは好ましくはその3〜10倍モル搦、とす
ることがよい。また、このニトリル化合物添加後の蒸留
は金属製またはガラス製あるいはガラスライニングをし
た蒸留装置で行えはよく、これには実′盾的に5〜IO
段相当の段塔内において還弥、比0.5以上の条件で操
作すればよい。
2) The treatment of silicon tetrachloride with an IJ compound is
Since the reaction between these nitrile compounds and titanium tetrachloride proceeds at room temperature, it is only necessary to add this nitrile compound to silicon tetrachloride, which is liquid at room temperature, and stir it. The complex salt of the compound precipitates as a yellow precipitate in the tobacco liquid, so this silicon tetrachloride can be easily purified to be free of titanium tetrachloride by distilling it under normal pressure. In this case, addition 11 [1 of the nitrile compound]
The amount used must be at least the same molar amount as the molar amount of titanium tetrachloride contained in silicon tetrachloride before purification, preferably 3 to 10 times the molar amount. Good. In addition, the distillation after addition of the nitrile compound can be carried out using a metal, glass, or glass-lined distillation apparatus;
The operation may be carried out in a plate tower corresponding to plates under the conditions of a reduction ratio of 0.5 or more.

つぎに本発明の実施例をあげるが、例中における四塩化
けい素中の四塩化チタン含有量はいずれも原子吸光法に
よる測定値を示したものである。
Next, Examples of the present invention will be given, in which the contents of titanium tetrachloride in silicon tetrachloride are all values measured by atomic absorption spectrometry.

実施例 1゜ 1.0ppmimの四塩化チタンを含有している四塩化
けい素100部中に、この四塩化チタンの5倍モル量に
相当する1 1 PPm のアセトニトリル(OHs 
ON )  を常温で添加したところ、黄褐色の沈澱が
生成したので、ついでこれを5段相当のガラス製蒸留装
置中で還流比0.5で蒸留し、得られた四塩化けい素中
の四塩化チタン含有相をしらべたところ、これはi P
 P b以下であった。
Example 1 In 100 parts of silicon tetrachloride containing 1.0 ppm of titanium tetrachloride, 1 1 PPm of acetonitrile (OHs) corresponding to 5 times the molar amount of titanium tetrachloride was added.
ON) was added at room temperature, a yellowish brown precipitate was formed, which was then distilled at a reflux ratio of 0.5 in a 5-stage glass distillation apparatus. When we examined the titanium chloride-containing phase, we found that it was i P
It was below Pb.

実施例 2Example 2

Claims (1)

【特許請求の範囲】 1、四塩化けい素に示性式RON  (こ′>にRはア
ルキル基、アルケニル基、アリール基−へテa環基から
選ばれる1価の有機基)で示されるニトリル化合物を添
加し、ついで蒸溜することを特徴とする四塩化けい素の
精製方法。 2 二) IJル化合物を四塩化けい素に含有される四
塩化チタン貴の等モル以上添加する特許請求の範囲第1
項記載の四塩化けい素の精製方法。 3、 ニトリル化合物がアセトニトリル(OHs ON
)。 アグリロニトリル(OH,= CHON ) 、ベンゾ
ニトリル(OgHllON )力1ら選ばれるものであ
る特許請求の範囲第1項または第2項記載の四塩化けい
累の精製方法。
[Claims] 1. Silicon tetrachloride is represented by the specific formula RON (where R is a monovalent organic group selected from an alkyl group, an alkenyl group, an aryl group - a hetea ring group) A method for purifying silicon tetrachloride, which comprises adding a nitrile compound and then distilling it. 2 2) Claim 1 in which the IJ compound is added in an amount equal to or more than the same mole of titanium tetrachloride contained in silicon tetrachloride.
Method for purifying silicon tetrachloride as described in Section 1. 3. The nitrile compound is acetonitrile (OHs ON
). 3. The method for purifying silica tetrachloride according to claim 1 or 2, wherein the method is selected from agrilonitrile (OH,=CHON) and benzonitrile (OgHllON).
JP12103682A 1982-07-12 1982-07-12 Method for refining silicon tetrachloride Expired JPS6028762B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12103682A JPS6028762B2 (en) 1982-07-12 1982-07-12 Method for refining silicon tetrachloride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12103682A JPS6028762B2 (en) 1982-07-12 1982-07-12 Method for refining silicon tetrachloride

Publications (2)

Publication Number Publication Date
JPS5913618A true JPS5913618A (en) 1984-01-24
JPS6028762B2 JPS6028762B2 (en) 1985-07-06

Family

ID=14801227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12103682A Expired JPS6028762B2 (en) 1982-07-12 1982-07-12 Method for refining silicon tetrachloride

Country Status (1)

Country Link
JP (1) JPS6028762B2 (en)

Also Published As

Publication number Publication date
JPS6028762B2 (en) 1985-07-06

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