JPS5888911A - Variable attenuator - Google Patents
Variable attenuatorInfo
- Publication number
- JPS5888911A JPS5888911A JP18694581A JP18694581A JPS5888911A JP S5888911 A JPS5888911 A JP S5888911A JP 18694581 A JP18694581 A JP 18694581A JP 18694581 A JP18694581 A JP 18694581A JP S5888911 A JPS5888911 A JP S5888911A
- Authority
- JP
- Japan
- Prior art keywords
- diodes
- transmission line
- circuit
- signal
- impedance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/24—Frequency- independent attenuators
- H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
- H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
Landscapes
- Attenuators (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、ダイオードを使用した可変減衰器に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a variable attenuator using diodes.
斯かる減衰器は、受信機のムGO回路にその使用例をみ
ることができる。ところで、受信機は、遠く離れ九放送
局の数μVの微弱信号から、近い放送局の1v以上に達
する大信号まで、歪なく受信することが要求されるが、
過大信号が入ると局部発振周波数に悪影響を及ぼし出力
に歪を生じる。An example of the use of such an attenuator can be found in the MGO circuit of a receiver. By the way, a receiver is required to receive without distortion from a weak signal of a few microvolts from a distant nine broadcasting station to a large signal reaching 1v or more from a nearby broadcasting station.
If an excessive signal enters, it will adversely affect the local oscillation frequency and cause distortion in the output.
この丸め混合段には、なるべく一定の大きさの信号を供
給する必要があシ、強い電波を受信するとその強さに応
じて、自動的に高周波増幅段の利得を下げて混合回路へ
の入力を一定に保つようなムGo回路が必要になる。ム
Go回路は一般に、中間周波数段の出力を整流する検出
回路と、それKよシ利得を制御される被制御回路より構
成される。It is necessary to supply a signal of as constant a size as possible to this rounding mixing stage.When a strong radio wave is received, the gain of the high frequency amplification stage is automatically lowered depending on the strength of the signal, and the signal is input to the mixing circuit. A Mu Go circuit is required to keep the value constant. The Go circuit generally includes a detection circuit that rectifies the output of the intermediate frequency stage, and a controlled circuit whose gain is controlled.
ムGoのかけ方には、バイアス電流を増加させて利得制
御を行うホワードムGCと、バイアス電流を減少させて
利得制御を行うリバースムGOとがある。There are two ways to apply the modulus Go: forward dome GC, which performs gain control by increasing the bias current, and reverse dome GO, which performs gain control by decreasing the bias current.
上記ホワードムGoを行うため、従来、181図(2)
)K示すように信号路とアース間に挿入し九ダイオード
1に電流を流すようにしたものがある。このムGoは、
トランジスタ勢の他のムGo素子を使用したものに比べ
、相互変調勢、強入力特性が曳いことは周知である。と
ころが、この場合、信号路のインピーダンスが低くなる
ため、後続するBPFの特性が変わる郷の欠点がある。In order to perform the above How Dome Go, conventionally, Figure 181 (2)
) As shown in Figure 1, there is a type that is inserted between the signal path and the ground to allow current to flow through the diode 1. This mu Go is
It is well known that the intermodulation effect and strong input characteristics are better than those using other transistor-based Go elements. However, in this case, since the impedance of the signal path becomes low, there is a disadvantage that the characteristics of the following BPF change.
を九、第1図(至)に示すように信号路に直列にダイオ
ード1t−挿入してリバースムGOを行うようにしたも
のであるが、この場合、強入力において相互変調郷混信
の原因になることも周知である。9. As shown in Figure 1 (to), a diode is inserted in series in the signal path to perform reversal GO, but in this case, strong input causes intermodulation interference. This is also well known.
以上の他に、第1図(0)に示すようにダイオード11
〜10をπ形に接続した本のもあるが、定インピーダン
スを保持しようとすると、信号路とアース間に挿入され
ているダイオードを完全に短給できないため、上述の場
合同様、曳好な強入力特性が得られないなどの欠点があ
る。In addition to the above, as shown in FIG.
There are books that connect ~10 in a π-shape, but if you try to maintain a constant impedance, you cannot completely shorten the diode inserted between the signal path and the ground, so as in the case above, it is necessary to There are drawbacks such as the inability to obtain input characteristics.
なお、第1図(1)〜(0)において、2は信号源、3
は信号源インピーダンスである。In addition, in FIG. 1 (1) to (0), 2 is a signal source, and 3 is a signal source.
is the signal source impedance.
本発明は上述した点に鑑みてなされたもので、その目的
とするところは、出力端から見たインピーダンスを一定
に保ちつつ信号の減衰量を変えることのできる可変減衰
器を提供することKある。The present invention has been made in view of the above points, and an object thereof is to provide a variable attenuator that can change the amount of signal attenuation while keeping the impedance seen from the output end constant. .
このために成された可変減衰器は、4分の1波長の伝送
線、又はそれと等価なLO回路の入力端で信号路とアー
ス間にダイオードを接続し、かつ出力端で信号路とアー
ス間にダイオードと前記伝送線又はLO回路の特性イン
ピーダンスと等価な抵抗とを直列に接続し、前記ダイオ
ードの両方に流す電流を制御して信号の減衰量を変える
ようにし九ことを特徴とする。The variable attenuator created for this purpose connects a diode between the signal path and ground at the input end of a quarter-wavelength transmission line or an equivalent LO circuit, and connects a diode between the signal path and ground at the output end. A diode and a resistance equivalent to the characteristic impedance of the transmission line or LO circuit are connected in series, and the current flowing through both of the diodes is controlled to change the amount of signal attenuation.
以下本発明を第2図以降に示す実施例について詳述する
。The present invention will be described in detail below with reference to embodiments shown in FIG. 2 and subsequent figures.
第2図は本発明による可変減衰器の一実施例を示す回路
図であり、可変減衰器の入力端子4には、zoなるイン
ピーダンス3を有する信号源、2が接続され、信号源2
からの信号は所定量減衰された侵出力端子5から送出さ
れる。FIG. 2 is a circuit diagram showing an embodiment of a variable attenuator according to the present invention. A signal source 2 having an impedance 3 of zo is connected to an input terminal 4 of the variable attenuator.
The signal from the oscilloscope is transmitted from the erosive force terminal 5, which is attenuated by a predetermined amount.
減衰器は、zoなる特性インピーダンスを有する4分の
1波長(λ/4)伝送線10を有する。The attenuator has a quarter wavelength (λ/4) transmission line 10 with a characteristic impedance of zo.
この伝送線1Gの入出力燭はカップリング兼直流阻止用
コンデンサC1及びC2をそれぞれ介して入出力端子4
及び5にそれぞれ接続されている。The input/output lamp of this transmission line 1G is connected to the input/output terminal 4 via coupling/DC blocking capacitors C1 and C2, respectively.
and 5, respectively.
上記伝送線100入力端にはまた、信号路とアース間に
カップリング兼直流阻止用コンデンサC烏を介してダイ
オードD1が接続されている。そして、上記伝送線10
の出力端にはまた、信号路とアース間にダイオードD、
と上記伝送線10の特性インピーダンスzoと等価な抵
抗R1とが直列に接続されている。A diode D1 is also connected to the input end of the transmission line 100 via a coupling and direct current blocking capacitor C between the signal path and the ground. Then, the transmission line 10
There is also a diode D between the signal path and ground at the output end of
and a resistor R1 equivalent to the characteristic impedance zo of the transmission line 10 are connected in series.
上記ダイオードD、のカソードとダイオードDIのアノ
ードとが信号路に接続されていて、かつダイオードD1
のアノードとコンデンサ0.の接続点には高周波阻止用
抵抗R3を介して制御電圧端子6が接続されている。こ
のだめ、端子6に電圧を加えることによってダイオード
DI、伝送llA10゜ダイオードD、及び抵抗R1を
通じて電流が流れるようになる。そして端子6に加える
電圧を変えることによって、ダイオードD、及びり、に
流れる電流が制御される。The cathode of the diode D and the anode of the diode DI are connected to the signal path, and the diode D1
Anode and capacitor of 0. A control voltage terminal 6 is connected to the connection point through a high frequency blocking resistor R3. At this point, applying a voltage to terminal 6 causes current to flow through diode DI, transmission 11A10° diode D, and resistor R1. By changing the voltage applied to terminal 6, the current flowing through diode D is controlled.
この電流制御によりダイオードD、及びD!はその導通
度が変えられてその高周波抵抗が制御されるため、ダイ
オードD、及びり、を通じてアースに落される信号路上
の信号の大きさが変えられる。すなわち、信号源2から
伝送された信号の減衰量を変えることのできる可変減衰
器が得られる。This current control causes diodes D and D! Since its conductivity is changed to control its high frequency resistance, the magnitude of the signal on the signal path that is dropped to ground through the diodes D and D is changed. That is, a variable attenuator that can change the amount of attenuation of the signal transmitted from the signal source 2 is obtained.
図の例では、制御電圧を大きくすることによりて、ダイ
オードD、及びり、の高周波抵抗が小さくなり、それ丈
減衰器の減衰度が大きくなる。In the example shown in the figure, by increasing the control voltage, the high frequency resistance of the diodes D and D decreases, and the attenuation degree of the length attenuator increases.
今、成る制御電圧を加えたときのダイオードDI及びD
!の高周波抵抗をRとすると、出力端子5側から見たイ
ンピーダンス2−は、伝送m1leがλ/4である丸め
、
RZ。Now, the diodes DI and D when the control voltages are applied are
! When the high frequency resistance of R is R, the impedance 2- seen from the output terminal 5 side is rounded, where the transmission m1le is λ/4, RZ.
RZ0 R+Z。RZ0 R+Z.
1 + □ R+Z。1 + □ R+Z.
となシ、常KZoなる定インピーダンスとなる。Then, the impedance becomes constant KZo.
上述した実施例では、λ/4の伝送線1Gを用いている
が、この代シに、特性インピーダンス2゜で、かつ伝送
線10と等価のLO回路を用いることもできる。その幾
つかを例示すると、visi+及びτ型にそれぞれ構成
したLPF形のもの、π重及びτ型にそれぞれ構成した
HPF形のもの及びジャイレータ形のものが挙られる。In the above-described embodiment, a λ/4 transmission line 1G is used, but an LO circuit having a characteristic impedance of 2° and equivalent to the transmission line 10 may be used instead. Examples of some of them include LPF types configured as visi+ and τ types, HPF types configured as π-fold and τ types, and gyrator types.
上述したものが代表的な回路例であるが、要すで表わさ
れる回路は全てインピーダンス反転作用をもっており、
第3図に示すように入力及び出力にそれぞれR,m、
R−を接続したとき、Rlm Ram −”
で表わされる回路網であればよい。The above-mentioned circuits are typical examples, but all the circuits shown below have an impedance inversion effect.
As shown in Figure 3, R, m, and
When R- is connected, any circuit network that can be expressed as "Rlm Ram -" may be used.
第4図は、受信機のアンテナ20とIIPア/プ21と
の間に上述した本発明による可変減衰器22を接続し、
受信機のムGo制御信号によりダイオードに流す電流を
制御して可・変減衰器でムGO回路を構成した一例を示
す。このように1本発明の可変減衰器でムGO回路を構
成すると、出力インピーダンスが常に一定であるため、
RFアンプ21の入力BPF23の特性を損うことなく
信号を減衰させることができる。しかも、強入力に対し
て全てのダイオードがフォワードムGO素子として働く
ので、強入力特性が良好である。このことにより、強入
力時の変調歪率が良く、かつ相互変調が少なくなる他、
RFアンプの入力BPFの周波数ずれ、動作Qの変化が
なく、妨害波除去能力が低下することがなくなる。従っ
て、強電界中を走行する車載用受信機にとの100回路
を使用すれば、混信、音のひずみ等の障害を受けない好
ましい受信機を得ることができる。FIG. 4 shows that the variable attenuator 22 according to the invention described above is connected between the receiver antenna 20 and the IIP amplifier 21,
An example of a MuGO circuit configured with a variable attenuator is shown in which the current flowing through the diode is controlled by the MuGo control signal of the receiver. In this way, when a MuGO circuit is configured with the variable attenuator of the present invention, the output impedance is always constant, so
The signal can be attenuated without impairing the characteristics of the input BPF 23 of the RF amplifier 21. Moreover, since all the diodes work as forward beam GO elements for strong input, the strong input characteristics are good. This improves the modulation distortion rate during strong input and reduces intermodulation, as well as
There is no frequency shift of the input BPF of the RF amplifier, there is no change in the operation Q, and there is no reduction in the interference wave removal ability. Therefore, if the above 100 circuits are used in a vehicle-mounted receiver that runs in a strong electric field, a preferable receiver that is free from interference such as interference and sound distortion can be obtained.
本発明は上述したように、4分の1波長の伝送線、又は
それと等価なI、C回路の入力端で信号路とアース間に
ダイオードを接続し、かつ出力端で信号路とアース間に
ダイオードと上記伝送線又はLO回路の特性インピーダ
ンスと弊価な抵抗とを直列に接続し、上記ダイオードの
両方に流す電流を制御して信号の減衰量を変えるように
しているため、出力端側からみたインピーダンスは減衰
量の増減によって変わることがなく常に一定に保持する
ことができるという冥用上極めて有効な効果が得られる
。As described above, the present invention connects a diode between a signal path and ground at the input end of a quarter wavelength transmission line or an equivalent I/C circuit, and connects a diode between the signal path and ground at the output end. The diode and the characteristic impedance of the transmission line or LO circuit are connected in series, and the current flowing through both diodes is controlled to change the amount of signal attenuation. The impedance seen does not change due to an increase or decrease in attenuation and can always be kept constant, which is an extremely effective effect in practical terms.
第1図(匍乃至(0)は従来の可変減衰器の例をそれぞ
れ示す回路図、第2図は本発明による可変減衰器の一実
施例を示す回路図、第3図は4分の1波長伝送線と等価
な回路を一般化して示す回路図、及び第4図は本発明に
よる可変減衰器の応用例を示す回路図である。
10・・・・・・・・・・・・伝送線
D1+DI・・・ダイオード
R1・・・・・・・・・・・・抵 抗
(a) (b) (
c)翻#t&Figures 1 to 0 are circuit diagrams showing examples of conventional variable attenuators, Figure 2 is a circuit diagram showing an embodiment of the variable attenuator according to the present invention, and Figure 3 is a quarter A circuit diagram showing a generalized circuit equivalent to a wavelength transmission line, and FIG. 4 are circuit diagrams showing an application example of the variable attenuator according to the present invention. 10...Transmission Line D1+DI...Diode R1......Resistance (a) (b) (
c) translation#t&
Claims (1)
該伝送線又はLC回路の入力端で信号路とアース間に接
続されたダイオードと、前記伝送線又はLO回路の出力
端で信号路とアース間に接続された、ダイオードと前記
伝送線又は1.0回路の特性インピーダンスと郷価な抵
抗との直列回路とを備え、前記ダイオードの両方に流す
電流を制御して信号の減衰量を変えるようにしたことを
特徴とする可変減衰器。A quarter wavelength transmission line or a similar LO circuit,
a diode connected between a signal path and ground at the input end of the transmission line or LC circuit, and a diode connected between the signal path and ground at the output end of the transmission line or LO circuit; 1. A variable attenuator comprising a series circuit of a zero circuit characteristic impedance and a low-cost resistor, and controlling the current flowing through both of the diodes to change the amount of signal attenuation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18694581A JPH0237725B2 (en) | 1981-11-24 | 1981-11-24 | KAHENGENSUIKI |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18694581A JPH0237725B2 (en) | 1981-11-24 | 1981-11-24 | KAHENGENSUIKI |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5888911A true JPS5888911A (en) | 1983-05-27 |
JPH0237725B2 JPH0237725B2 (en) | 1990-08-27 |
Family
ID=16197467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18694581A Expired - Lifetime JPH0237725B2 (en) | 1981-11-24 | 1981-11-24 | KAHENGENSUIKI |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0237725B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0294117A2 (en) * | 1987-06-04 | 1988-12-07 | Texas Instruments Incorporated | Monolithic variable attenuation switched limiter |
US5204643A (en) * | 1991-01-14 | 1993-04-20 | Nokia Mobile Phones Ltd. | Controllable high-frequency attenuator |
EP1466382A1 (en) * | 2002-01-15 | 2004-10-13 | Nokia Corporation | Circuit topology for attenuator and switch circuits |
JP2011239360A (en) * | 2010-05-10 | 2011-11-24 | Mediatek Singapore Pte Ltd | Millimeter-wave attenuator and shunt switching circuit |
-
1981
- 1981-11-24 JP JP18694581A patent/JPH0237725B2/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0294117A2 (en) * | 1987-06-04 | 1988-12-07 | Texas Instruments Incorporated | Monolithic variable attenuation switched limiter |
US5204643A (en) * | 1991-01-14 | 1993-04-20 | Nokia Mobile Phones Ltd. | Controllable high-frequency attenuator |
EP1466382A1 (en) * | 2002-01-15 | 2004-10-13 | Nokia Corporation | Circuit topology for attenuator and switch circuits |
EP1466382A4 (en) * | 2002-01-15 | 2005-01-26 | Nokia Corp | Circuit topology for attenuator and switch circuits |
JP2011239360A (en) * | 2010-05-10 | 2011-11-24 | Mediatek Singapore Pte Ltd | Millimeter-wave attenuator and shunt switching circuit |
US8279019B2 (en) | 2010-05-10 | 2012-10-02 | Mediatek Singapore Pte. Ltd. | Millimeter-wave switches and attenuators |
Also Published As
Publication number | Publication date |
---|---|
JPH0237725B2 (en) | 1990-08-27 |
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