JPS5840919A - Voltage comparator - Google Patents
Voltage comparatorInfo
- Publication number
- JPS5840919A JPS5840919A JP13894781A JP13894781A JPS5840919A JP S5840919 A JPS5840919 A JP S5840919A JP 13894781 A JP13894781 A JP 13894781A JP 13894781 A JP13894781 A JP 13894781A JP S5840919 A JPS5840919 A JP S5840919A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- transistor
- load
- flip
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356017—Bistable circuits using additional transistors in the input circuit
- H03K3/356034—Bistable circuits using additional transistors in the input circuit the input circuit having a differential configuration
Landscapes
- Manipulation Of Pulses (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
Description
【発明の詳細な説明】
本発明社、主として相補層絶縁グーF構成の半導体集積
回路上K1111するム/D変換器等に用い徽小なる差
のある2りO電圧を比較しそO大小に応じ九論理電圧を
出力させるOに適した電圧比較回路に関するものである
。Detailed Description of the Invention The present invention is mainly used in semiconductor integrated circuits with a complementary layer insulating layer F structure, such as MU/D converters. This invention relates to a voltage comparator circuit suitable for outputting nine logic voltages.
従来相補臘絶縁ゲート構成の半導体集積回路に用いる電
圧比較回路としては、第111に示すごとく、Mlを定
電流源とし、Ml、M3を入力トツンジスタとし、M4
、MSを電流ミラー製負荷として構成し九差動増幅回
路によシ端子λ3に:加えられた電圧の差に比例した出
力電圧を端子6からと9出し、これをM6を定電流負荷
とする反転増幅器11によシ更に増幅するさ膜構成の増
幅回路を使用していた。Conventionally, as shown in No. 111, a voltage comparator circuit used in a semiconductor integrated circuit having a complementary insulated gate configuration uses Ml as a constant current source, Ml and M3 as input transistors, and M4 as shown in FIG.
, MS is configured as a current mirror load, and an output voltage proportional to the difference between the voltages applied to terminal λ3 is outputted from terminals 6 and 9 by a differential amplifier circuit, and M6 is a constant current load. An amplification circuit having a membrane configuration was used for further amplification by an inverting amplifier 11.
第1図をはじめ本願において使用するシンボルは、Pチ
ャンネルトランジスタを舘2図(→、9!チャンネルト
ランジスタを第2図(blのように定める。Symbols used in this application, including FIG. 1, are defined as P-channel transistors in Figure 2 (→) and 9!-channel transistors in Figure 2 (BL).
共にGとしたのがゲート、Sと示したのがソースDと示
したのがドレインである。この2段構成の増幅回路によ
れば通常2000倍〜5000倍の利得が得られるが、
利得の余裕を得るため普通は更に反転増幅@12を1段
付加している。13は的記M1とM6を定電流領域ζ動
作させるためのバイアス電圧供給装置で、例えば第3図
の回路で実現される。第3図の回路はMOS)ランジス
タのゲート電極とドレイン電極とを!!続したいわゆる
ダイオード接続されたトランジスタを3個直列に接続し
、端子1と9の間に加えられる電源電圧を分圧するもO
である。The gate is denoted by G, the source D is denoted by S, and the drain is denoted by G. This two-stage amplifier circuit usually provides a gain of 2000 to 5000 times, but
In order to obtain margin for gain, one stage of inverting amplification @12 is usually added. Reference numeral 13 denotes a bias voltage supply device for operating M1 and M6 in a constant current region ζ, which is realized, for example, by the circuit shown in FIG. The circuit in Figure 3 is a MOS) transistor with its gate electrode and drain electrode! ! Three so-called diode-connected transistors are connected in series to divide the power supply voltage applied between terminals 1 and 9.
It is.
かかる電圧比較回路は入力電圧差が減少するへそれにみ
あって増幅段数を増加せねばならず、集積回路内の占有
面積O増大、消費電力の増大を招く。さらに初RO差動
増幅器の同相電圧除去は万全と社言えず、入力電圧の同
相成分が変化すると節点・O出力電圧が変化し、この電
圧が反転増幅器によ〕増幅されるため、入力電圧として
数1v以下の電圧差O鳩舎には同相電圧によっては最終
段の出力で論理@l”の状態と論理′″O#の状態が入
れ替わることがある。1+、電源電圧が変動した場会に
も同じ現象を生ずる。そのため、かかる電圧比較回路で
は入力電圧の同相成分が大きい場合数域マ以下の差を識
別するととは不可能である欠点を有する。In such a voltage comparator circuit, as the input voltage difference decreases, the number of amplification stages must be increased accordingly, resulting in an increase in the occupied area O in the integrated circuit and an increase in power consumption. Furthermore, the common-mode voltage rejection of the first RO differential amplifier cannot be said to be perfect; if the common-mode component of the input voltage changes, the node/O output voltage changes, and this voltage is amplified by the inverting amplifier. In a pigeon house with a voltage difference of several volts or less, depending on the common mode voltage, the state of logic @l'' and the state of logic ''O# may be switched at the output of the final stage. 1+, the same phenomenon occurs when the power supply voltage fluctuates. Therefore, such a voltage comparator circuit has a drawback that it is impossible to distinguish a difference in the order of magnitude or less when the common mode component of the input voltage is large.
本発明はかかる欠点を除去し、非常に高感度な電圧比較
回路を少ない素子数によシ実現しようとするものである
。The present invention aims to eliminate such drawbacks and realize a highly sensitive voltage comparator circuit with a reduced number of elements.
本発明は、信号入力トランジスタとは異極性のゲート電
極とドレイン電極とを接続したトランジスタを負荷とし
て持つ差動増幅器と、前記負荷トランジスタと同極性O
)?ンジスタ2個を交叉結合してその共通ソース電極を
前記負荷トランジスタの接地電位まで間欠的に低下させ
る手段を有するフリップフロップ回路と、を相補型絶縁
ゲートトランジスタを用いて構成し、前記フリップフロ
ップの2つのドレイン電極をそれぞれ前記差動増幅器負
荷のドレイン電極に接続する特徴を有し、前記間欠的に
電位が低下するとき前記差動増l!器の入力電圧の大小
に対応して論理出力として充分な出力電圧を前記差動増
幅器の出力端に得るようにし九電圧比較回路である。The present invention provides a differential amplifier having as a load a transistor whose gate electrode and drain electrode are connected to each other with a different polarity than that of the signal input transistor, and a differential amplifier whose load transistor has the same polarity as the load transistor.
)? a flip-flop circuit having means for cross-coupling two transistors and intermittently lowering their common source electrode to the ground potential of the load transistor; The two drain electrodes are connected to the drain electrodes of the differential amplifier load, respectively, and when the potential intermittently decreases, the differential amplifier l! The voltage comparator circuit is designed to obtain a sufficient output voltage as a logic output at the output terminal of the differential amplifier according to the magnitude of the input voltage of the differential amplifier.
以下本発明を、具体的回路例の一例を示す第4図および
端子17に加えるノ(ルスのタイミングの一例を示す第
5図を用いて説明する。The present invention will be described below with reference to FIG. 4, which shows an example of a specific circuit, and FIG. 5, which shows an example of the timing of the voltage applied to the terminal 17.
第4図に示したのは本館1の発明の実施の一例である。What is shown in FIG. 4 is an example of the implementation of the invention in the main building 1.
信号入力トランジスタM2 、MSおよび定電流源M1
1に7)チャンネル)ランジスタを用いM2とMSのソ
ース電極に岡じ(PチャンネルトランジスタMIIDド
レイン電極を接続し、Mlのソース電極は正の電源に接
続し、MIOゲート電極は節点4を介して/(イアスミ
圧発生装置13に接続して一定電圧を印加するようにし
て定電流源を構成している。M2 、M30ドレイン電
極にはそれぞれいわゆるダイオード接続された2チャン
ネルトランジスタM13.M14が負荷として接続され
ておシ、これらによシ差動増幅器が構成されている。M
l3.Ml4のドレイン電極は出力端5.6として外部
にとシ出されると共に、出力端5にはzチャンネルトラ
ンジスタMIOのゲート電極および鴨チャンネルトラン
ジスタMllのドレイン電極力≦接a−aれ、出力端6
にはMIOのドレイン電極およびMllのゲート電極が
接続されて交叉結合を構成してお)、MIOおよびMl
lO共通ソース電極に社鴨チャンネルトランジスタM1
2のドレイン電極、71接続され、Ml2のソース電極
は負電源に接続され、Ml2のゲートは端子17を介し
て第5図のパルス「イ」を1発生する装置に接続するよ
うにし、間欠的にMIO!−よびMllのソース電圧を
降下させる手段となしである0
第4図14のごときダイオード接続されたトランジスタ
を負荷とした差動増幅回路は、第1図10C)ごとき電
流ミラーを負荷とし良差動増幅器に比して利得が数分e
)1以下であ)、同相除去比も悪くなる、という事実を
欠点として考えられて−たために相補臘絶縁ゲート構成
の半導体集積回路では従象願奉られることがなかった回
路構成である。Signal input transistor M2, MS and constant current source M1
1 to 7) Connect the drain electrode of the P-channel transistor MIID to the source electrode of M2 and MS using the channel transistor, the source electrode of Ml is connected to the positive power supply, and the MIO gate electrode is connected to the source electrode of M2 and MS through node 4. /(A constant current source is configured by connecting to the IAsumi pressure generator 13 and applying a constant voltage. So-called diode-connected two-channel transistors M13 and M14 serve as loads to the drain electrodes of M2 and M30, respectively. A differential amplifier is configured by these.M
l3. The drain electrode of Ml4 is outputted to the outside as an output terminal 5.6, and the output terminal 5 is connected to the gate electrode of the z channel transistor MIO and the drain electrode of the duck channel transistor Mll.
The drain electrode of MIO and the gate electrode of Mll are connected to form a cross-coupling), MIO and Ml
A social channel transistor M1 is connected to the lO common source electrode.
The drain electrode of Ml2 is connected to 71, the source electrode of Ml2 is connected to a negative power supply, and the gate of Ml2 is connected via terminal 17 to a device that generates pulse "A" in FIG. ni MIO! A differential amplifier circuit with a diode-connected transistor as the load as shown in FIG. The gain is several minutes e compared to that of an amplifier.
)1) and the common-mode rejection ratio is also poor, which was considered to be a drawback, so this circuit configuration has never been pursued as an analogue of a semiconductor integrated circuit with a complementary insulated gate configuration.
しかし本発明である第4E15の79ツブフロツプは、
それ自体正帰還がかかる丸め利得は無限大であシ、同相
除去作用も非常に大きいため、前記の欠点は問題ではな
くなるというのが本発明者の発想であル、事実その結果
、後に述べる様に電圧比較を行った後の差動増幅器への
復帰が早くなるという従来予想だKされていなかつた大
1′&荊点を得るに到った。However, the 4E15 79-tube flop of the present invention is
The inventor's idea is that the rounding gain caused by positive feedback is infinite, and the common-mode rejection effect is also very large, so the above-mentioned drawbacks are no longer a problem.In fact, as a result, as will be described later, It was previously expected that the return to the differential amplifier would be faster after the voltage comparison was performed, but we were able to obtain the large 1'& 0.0 points, which had not been achieved.
いま第51ilK示した時1asso状態から説明する
。Now, when the 51st ilK is shown, it will be explained from the 1asso state.
時刻−ではパルス「イ」は零状態であシ、第4図の入力
端λ3では2の電圧0方が30電圧よりは高いとする。At time -, the pulse "I" is in the zero state, and at the input terminal λ3 in FIG. 4, the voltage 0 of 2 is higher than the voltage 30.
すると、M3を流れる電流aM2よりは多くなる。した
がって出力端6の電圧が出方端5の電圧より高くなる。Then, the current aM2 flowing through M3 becomes larger. Therefore, the voltage at the output end 6 becomes higher than the voltage at the output end 5.
この電圧差状普通、入力電圧差の数倍から10倍@度で
ある0このとき節点160電圧は翫6の電圧の差がzチ
ャンネルト2ンジスクの閾値電圧よ)小さい場合は、高
一方の出力端6の電圧に比べて算チャ/ネルトランジス
タの閾値電圧分だけ低い電圧になつている。この差が閾
値電圧よ)大きく表ると、 s、10うち電圧の低い方
の出力端5の電圧と等しくなる。これはMIO,Mll
がお互いに出力端翫6の電圧Oソース7オロ7回路とな
っているえめである。次に時m t、でパルス「イ」が
立ち上がると、M12が導通し、節点16の電圧が降下
するOt&とlNo、muで構成されている7リツプ7
0ツブが活性化され、Mllが先に導通し、出力端60
電圧を降下させる。節点16が降下するに従って出力t
a6が降下するため、MIGを流れる電流はMllを流
れる電流に比してずりと少ないので、出力端5はほぼパ
ルス「イ」が印加される前の電圧を保持する。ここで低
電圧側の最終電圧を襲チャンネルトラyジスタ0@値電
圧よ)充分低くするためMIOおよびM12についてそ
のチャンネル幅をチャンネル長で除した商(W/L)を
M4およびM5に′)いて同様にして求めた値の5倍以
上にとるのが望ましい。この第4図に示した電圧比較回
路ではパルス「イ」を印加する前には差動増@器14が
純粋の差動増幅器であるか4しくは出力端5.6が等し
い電位でなければならない。時刻−でパルス「イ」を立
ち下げるとM12がオフし、フリップ70ツブには電流
は流れなくなる。こ0時M14はオフであるため、M3
を流れる電流はすべて充電の丸め供される。出力端5が
閾値電圧を越えてM14が導通してもM14は出力端5
の電圧が上昇するはど抵抗が下がる門な性質を持ってい
る丸め、M14を負荷とするよ)短時間に差動増II器
O状態に復帰させることができる。入力電圧が逆の場合
でもこの回路は対称となっているため同様の動作をする
。This voltage difference is usually several times to 10 times the input voltage difference.At this time, the voltage at node 160 is smaller than the threshold voltage at node 6. The voltage is lower than the voltage at the output terminal 6 by the threshold voltage of the channel/channel transistor. If this difference is large (like the threshold voltage), s becomes equal to the voltage at the lower output terminal 5 of 10. This is MIO, Mll
are the output terminal 6 voltage O source 7 O 7 circuits. Next, when the pulse "I" rises at time mt, M12 becomes conductive and the voltage at node 16 drops.
0 tube is activated, Mll conducts first, and the output terminal 60
Drop the voltage. As the node 16 descends, the output t
Since a6 drops, the current flowing through MIG is much smaller than the current flowing through Mll, so the output terminal 5 maintains approximately the voltage before the pulse "I" was applied. Here, in order to make the final voltage on the low voltage side sufficiently low (as compared to the channel transistor 0@value voltage), the quotient (W/L) obtained by dividing the channel width by the channel length for MIO and M12 is set as M4 and M5'). It is desirable that the value be five times or more the value obtained in the same manner. In the voltage comparator circuit shown in FIG. 4, before applying the pulse "A", the differential amplifier 14 must be a pure differential amplifier or the output terminals 5 and 6 must be at equal potential. No. When the pulse "I" falls at time -, M12 turns off, and no current flows through the flip 70 knob. At this time, M14 is off, so M3
All current flowing through the circuit is used for rounding the charge. Even if the output terminal 5 exceeds the threshold voltage and M14 becomes conductive, M14 remains at the output terminal 5.
The differential amplifier II can be returned to the O state in a short time (with M14 as the load), which has the characteristic that as the voltage increases, the resistance decreases. Even if the input voltages are reversed, this circuit is symmetrical and operates in the same way.
さて、こうした電圧比較回路の場合、電圧比較後差動増
aSとして動作する状態への復帰が早いだけで杜なく、
j!に高速で動作させえい場合がある。本第1sIA明
によるlAl11社かかる場合にも発展的に適合させる
ことが可能である。第6図に示したのはとうして得た本
第20発WJ4の実施の一例であ)、第4110In路
中、出力端s、sヘトランジスタMISIIりソースお
よびドレインをそれぞれ接続して構成されて>11、M
2Sのゲート端子18へは第5園のパルス附を印加する
ようにしである。第511に示し九ように時刻−のタイ
ミングでパルス「イ」を立ち下げると共に、パルス附を
立ち上げMlsを導通さ破ると出力端翫6の電圧が等し
くな31、Misが導通する直前の瑠子翫6の電圧のは
ぼ平均O電圧となる。次にパルス附を立ち下げると、M
2およびM3かも端子5.6に流れ込む電流の差は端子
λ3に入力される電圧OIIに比例しているから、前記
入力電圧の低い方の)ヲンジスタに接続された出力端0
方が先に電圧上昇するので次の電圧比較をすぐに行う仁
と′ができる。Now, in the case of such a voltage comparator circuit, it is not only quick to return to the state of operating as a differential aS after voltage comparison, but also
j! It may be difficult to operate at high speed. It is also possible to adapt the method in an advanced manner to the case of the 11 companies according to the present first sIA Akira. What is shown in FIG. 6 is an example of the implementation of WJ4 from the 20th issue of this book, which was finally obtained).In the 4110In path, the source and drain of the transistor MISII are connected to the output terminals s and s, respectively. te>11, M
The fifth pulse is applied to the gate terminal 18 of 2S. As shown in No. 511, when the pulse "I" falls at the timing of time -, and the pulse "A" rises to break the conduction of Mls, the voltage of the output terminal 6 becomes equal. 31, just before Mis becomes conductive. The voltage of the rod 6 is approximately the average O voltage. Next, when the pulse is lowered, M
Since the difference between the currents flowing into the terminals 5 and 5 and M3 is proportional to the voltage OII input to the terminal λ3, the output terminal 0 connected to the resistor (with the lower input voltage)
Since the voltage rises first in the first case, the next voltage comparison can be made immediately.
第1図は従来用いられている差動増@510と反転層@
器11 、12を用い九電圧比較回路で、13はパる。
gsl!1社バイアス電圧供給装置の1路例である。第
4図社本請求の範囲第1項に示し九発明の実施例であ〉
、第6図は本請求O範W第2項に示した発明の実施例で
ある。第5図ド)−(へ)■O各図tij14allお
よび第6図に供給するパルスタイミングおよび出力波形
の一例を示し要因である0図中、MXXと示したのはト
ランジスタであに数字のみを付したのは節点もしくは端
子である。
l+T
物 I 記
箭3図 第zU
巣 4 口
$51¥El
t、 t、 t、、 t/。
第61Figure 1 shows the conventionally used differential increase @510 and inversion layer @
A voltage comparator circuit with nine voltage comparators using devices 11 and 12 is used, and 13 is output. gsl! This is an example of one circuit of a bias voltage supply device manufactured by one company. FIG. 4 This is an embodiment of the nine inventions shown in Clause 1 of the claims.
, FIG. 6 is an embodiment of the invention shown in Section 2 of the present claim. Figure 5 shows an example of the pulse timing and output waveform supplied to each figure tij14all and Figure 6. In the figure, MXX is a transistor, and only numbers are shown. What is attached is a node or terminal. l+T Object I Note 3 Diagram No. zU Nest 4 Mouth $51¥El t, t, t,, t/. 61st
Claims (1)
ン電極とを接続したトランジスタを負荷に持つ差動増幅
器と、前記負荷トランジスタと同極性のトランジスタを
交叉結合してその共通ソース電極を前記負荷トラyジス
タ0接地電位まで間欠的に低下させる手段を有するフリ
ップフロップ回路と、を相補型絶縁ゲートトランジスタ
を用いて構成し、前記フリップフロップの2つのドレイ
ン電極をそれでれ前記差動増幅器負荷のドレイン電極に
接続しえ、ことを特徴とする電圧゛比較回路。 2、入力トランジスタとは異極性のゲート電極とドレイ
ン電極とを一統したトランジスタを負荷に持つ差動増幅
器と、前記負荷トランジスタと同極性のトランジスタ2
個を交叉結合してその共通ソース電極を前記負荷トラン
ジスタの接地電位まで間欠的に低下させる手段を有する
フリップフロップ回路と、を相補型絶縁ゲートトランジ
スタを用いて構成し、前記フリップフロップ02つのド
レイン電極をそれぞれ前記差動増幅器負荷のドレイン電
極に接続し、さらに前記間欠的に低下するフリップフロ
ップの共通ソース電極電位に同期させて前1負荷トラン
ジスタのドレイン電位を強制的に等電位にする手段を具
備した、ことを41徽とする電圧比較回路。[Claims] 1. A differential amplifier having a transistor as a load whose gate electrode and drain electrode are connected to each other with a different polarity from that of the input transistor, and a transistor whose polarity is the same as that of the load transistor are cross-coupled to form a common source. a flip-flop circuit having means for intermittently lowering the electrodes to the zero ground potential of the load transistor; and a flip-flop circuit using complementary insulated gate transistors, and connecting two drain electrodes of the flip-flop to the differential voltage. A voltage comparison circuit connectable to a drain electrode of an amplifier load. 2. A differential amplifier whose load is a transistor whose gate electrode and drain electrode are unified with the polarity different from that of the input transistor, and a transistor 2 whose polarity is the same as that of the load transistor.
a flip-flop circuit having means for cross-coupling the two flip-flops and intermittently lowering the common source electrode thereof to the ground potential of the load transistor; are connected to the drain electrodes of the differential amplifier loads, respectively, and further includes means for forcibly equalizing the drain potentials of the first load transistor in synchronization with the intermittently lowering common source electrode potential of the flip-flops. A voltage comparator circuit with 41 features.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13894781A JPS5840919A (en) | 1981-09-03 | 1981-09-03 | Voltage comparator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13894781A JPS5840919A (en) | 1981-09-03 | 1981-09-03 | Voltage comparator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5840919A true JPS5840919A (en) | 1983-03-10 |
JPH0345577B2 JPH0345577B2 (en) | 1991-07-11 |
Family
ID=15233868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13894781A Granted JPS5840919A (en) | 1981-09-03 | 1981-09-03 | Voltage comparator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5840919A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60190176A (en) * | 1984-03-09 | 1985-09-27 | Mitsubishi Electric Corp | Power regenerative apparatus |
JPS6312973A (en) * | 1986-07-03 | 1988-01-20 | Nec Corp | Battery voltage detecting circuit |
JPS63243764A (en) * | 1987-03-31 | 1988-10-11 | Toshiba Corp | Hysteresis comparator |
JPH05133984A (en) * | 1991-11-12 | 1993-05-28 | Kawasaki Steel Corp | Comparator |
JP2009514304A (en) * | 2005-10-26 | 2009-04-02 | エヌエックスピー ビー ヴィ | High speed comparator |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54158138A (en) * | 1978-06-05 | 1979-12-13 | Nippon Precision Circuits | Comparator |
JPS55166342A (en) * | 1979-06-12 | 1980-12-25 | Nec Corp | Minute potential difference comparing circuit |
-
1981
- 1981-09-03 JP JP13894781A patent/JPS5840919A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54158138A (en) * | 1978-06-05 | 1979-12-13 | Nippon Precision Circuits | Comparator |
JPS55166342A (en) * | 1979-06-12 | 1980-12-25 | Nec Corp | Minute potential difference comparing circuit |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60190176A (en) * | 1984-03-09 | 1985-09-27 | Mitsubishi Electric Corp | Power regenerative apparatus |
JPH041595B2 (en) * | 1984-03-09 | 1992-01-13 | Mitsubishi Electric Corp | |
JPS6312973A (en) * | 1986-07-03 | 1988-01-20 | Nec Corp | Battery voltage detecting circuit |
JPS63243764A (en) * | 1987-03-31 | 1988-10-11 | Toshiba Corp | Hysteresis comparator |
JPH05133984A (en) * | 1991-11-12 | 1993-05-28 | Kawasaki Steel Corp | Comparator |
JP2009514304A (en) * | 2005-10-26 | 2009-04-02 | エヌエックスピー ビー ヴィ | High speed comparator |
JP4856186B2 (en) * | 2005-10-26 | 2012-01-18 | エヌエックスピー ビー ヴィ | High speed comparator |
Also Published As
Publication number | Publication date |
---|---|
JPH0345577B2 (en) | 1991-07-11 |
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