JPS5837614B2 - magnetic recording medium - Google Patents
magnetic recording mediumInfo
- Publication number
- JPS5837614B2 JPS5837614B2 JP4403676A JP4403676A JPS5837614B2 JP S5837614 B2 JPS5837614 B2 JP S5837614B2 JP 4403676 A JP4403676 A JP 4403676A JP 4403676 A JP4403676 A JP 4403676A JP S5837614 B2 JPS5837614 B2 JP S5837614B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic recording
- silicon
- magnetic
- protective layer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 61
- 239000011241 protective layer Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 29
- 230000005294 ferromagnetic effect Effects 0.000 claims description 27
- 239000010410 layer Substances 0.000 claims description 22
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 19
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 14
- 238000007747 plating Methods 0.000 description 13
- -1 Cr02 Chemical class 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 238000007733 ion plating Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- 229910020632 Co Mn Inorganic materials 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- 229910020674 Co—B Inorganic materials 0.000 description 1
- 229910020678 Co—Mn Inorganic materials 0.000 description 1
- 229910020676 Co—N Inorganic materials 0.000 description 1
- 229910020710 Co—Sm Inorganic materials 0.000 description 1
- 229910020514 Co—Y Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 229910017082 Fe-Si Inorganic materials 0.000 description 1
- 229910017133 Fe—Si Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 101100459301 Mus musculus Myl4 gene Proteins 0.000 description 1
- 229910021205 NaH2PO2 Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229920002433 Vinyl chloride-vinyl acetate copolymer Polymers 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】
本発明は強磁性金属薄膜層を磁気記録層とする磁気記録
媒体に関するもので、具体的にはシリコンーシリコン酸
化物より成る保護層を表面に設けてなる磁気記録媒体に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic recording medium having a ferromagnetic metal thin film layer as a magnetic recording layer, and specifically relates to a magnetic recording medium having a protective layer made of silicon-silicon oxide on its surface. It is related to.
従来より磁気記録媒体としては、非磁性支持体上にγ−
Fe203、coをドープしたr−Fe203、Fe3
04,CoをドープしたFe304、γ一Fe203と
Fe304のベルトライド化合物、Cr02等の磁性粉
末あるいは強磁性合金粉末等の粉末磁性材料を塩化ビニ
ルー酢酸ビニル共重合体、スチレンーブタジエン共重合
体、エポキシ樹脂、ホリウレタン樹脂等の有機バインダ
ー中に分散せしめたものを塗布し、乾燥させる塗布型の
ものが広く使用されてきている。Conventionally, as a magnetic recording medium, γ-
Fe203, co-doped r-Fe203, Fe3
04. Powder magnetic materials such as Co-doped Fe304, γ-Fe203 and Fe304 beltride compounds, magnetic powders such as Cr02, or ferromagnetic alloy powders are combined with vinyl chloride-vinyl acetate copolymer, styrene-butadiene copolymer, epoxy Coating-type materials have been widely used, in which a material dispersed in an organic binder such as a resin or polyurethane resin is applied and dried.
近年高密度記録への要求の高まりと共に真空蒸着、スパ
ッタリング、イオンプレーテング等のペーパーデポジシ
ョン法あるいは電気メッキ、無電解メッキ等のメッキ法
により形威される強磁性金属薄膜を磁気記録層とする、
バインダーを使用しない、いわゆる非バインダー型磁気
記録媒体が注目を浴びており実用化への努力が種々行な
われている。In recent years, as the demand for high-density recording has increased, magnetic recording layers are made of ferromagnetic metal thin films formed by paper deposition methods such as vacuum evaporation, sputtering, and ion plating, or plating methods such as electroplating and electroless plating. ,
So-called binder-free magnetic recording media that do not use a binder are attracting attention, and various efforts are being made to put them into practical use.
従来の塗布型の磁気記録媒体では主として強磁性金属よ
り飽和磁化の小さい金属酸化物を磁性材料として使用し
ているため、高密度記録に必要な薄形化が信号出力の低
下をもたらすため限界にきており、かつその製造工程も
複雑で、溶剤回収あるいは公害防止のための大きな附帯
設備を要するという欠点を有している。Conventional coating-type magnetic recording media mainly use metal oxides, which have lower saturation magnetization than ferromagnetic metals, as magnetic materials, so the thinning required for high-density recording leads to a reduction in signal output, which has reached its limit. Moreover, the manufacturing process is complicated, and it has the drawback of requiring large auxiliary equipment for solvent recovery and pollution prevention.
非バインダー型の磁気記録媒体では上記酸化物より大き
な飽和磁化を有する強磁性金属をバインダーの如き非磁
性物質を含有しない状態で薄膜として形成せしめるため
、高密度記録化のために超薄形にできるという利点を有
し、しかもその製造工程は簡単である。In non-binder type magnetic recording media, a ferromagnetic metal with a saturation magnetization higher than that of the above-mentioned oxides is formed as a thin film without containing a non-magnetic substance such as a binder, so it can be made ultra-thin for high-density recording. Moreover, the manufacturing process is simple.
高密度記録用の磁気記録媒体に要求される条件の一つと
して、高抗磁力化、薄形化が理論的にも実験的にも提唱
されており、塗布型の磁気記録媒体よりも一桁小さい薄
型化が容易で、飽和磁束密度も大きい非バインダー型磁
気記録媒体への期待は大きい。As one of the requirements for magnetic recording media for high-density recording, high coercive force and thinness have been proposed both theoretically and experimentally. There are great expectations for non-binder type magnetic recording media that can be easily made small and thin and have a high saturation magnetic flux density.
強磁性金属薄膜から成る磁気記録媒体にかかわる大きな
問題として腐蝕及び摩耗に対する強度、走行安定性があ
る。Major problems concerning magnetic recording media made of ferromagnetic metal thin films include strength against corrosion and abrasion, and running stability.
磁気記録媒体は磁気信号の記録、再生及び消去の過程に
おいて磁気ヘッドと高速相対運動のもとにおかれるが、
その際走行がスムーズにしかも安定に行なわれねばなら
ぬし、同時にヘッドとの接触による摩耗もし《は破壊が
起ってはならない。A magnetic recording medium is subjected to high-speed relative motion with a magnetic head during the process of recording, reproducing, and erasing magnetic signals.
At this time, the running must be smooth and stable, and at the same time, wear or damage due to contact with the head must not occur.
又磁気記録媒体の保存中に腐蝕等による経時変化によっ
て記録された信号の減少あるいは消失があってはならな
いことも要求される。It is also required that recorded signals should not be reduced or lost due to changes over time due to corrosion or the like during storage of the magnetic recording medium.
単なる強磁性体金属層のみで磁気記録、再生過程での苛
酷な条件に堪え得るものは少なく、種々の保護層を表面
に形威せしめることが行なわれる。There are few ferromagnetic metal layers that can withstand the harsh conditions of magnetic recording and reproducing processes, and various protective layers are applied to the surface.
保護層として選択される物質は、硬くまたそれが形成さ
れる表面に対して薄く、一様でしかも強固に付着する性
質のものでなげればならない。The material selected for the protective layer must be hard and must adhere thinly, uniformly, and firmly to the surface on which it is formed.
苛酷な環境下で簡単にはがれたり、落ちたりする保護被
膜は磁気記録層に対する保護にならぬばかりでなく、更
に破片の発生等により新しい問題を生じさせることにな
る。A protective film that easily peels off or falls off under harsh environments not only does not protect the magnetic recording layer, but also creates new problems such as the generation of fragments.
更にこれらの物質は高速度の磁気記録システムにおける
静電気の問題を減少させるために導電性であるのが望ま
しい。Additionally, it is desirable that these materials be electrically conductive to reduce static electricity problems in high speed magnetic recording systems.
さらに保護層を形成せしめる手段が容易であることが望
まれる。Furthermore, it is desired that the means for forming the protective layer be easy.
これらの保護層としてロジウムの電気メッキによる保護
層形成は一部実用化されており、さらに潤滑剤を塗布す
る方法、さらには磁性体としてコバルトを含む強磁性金
属薄膜の場合には適当な温度・湿度のもとに置いて、そ
の表面を酸化させる方法(特公昭42−20025号、
米国特許3353166号)二合金磁性薄膜を硝酸と接
触せしめた後、熱処理して表面に酸化層を形成させ、し
かる後潤滑剤をしみこませる方法(英特許126517
5号):Crを適度な真空中にて強磁性金属薄膜表面上
に蒸着せしめ、CrとCrの酸化物の混合物層を形威せ
しめる方法(特公昭45−4393号)等が知られてい
る。Formation of a protective layer by rhodium electroplating has been partially put into practical use as a protective layer, and there is also a method of applying a lubricant, and in the case of a ferromagnetic metal thin film containing cobalt as a magnetic material, a method of applying a suitable temperature and temperature. A method of oxidizing the surface by placing it under humidity (Special Publication No. 42-20025,
(U.S. Pat. No. 3,353,166) A method in which a dialloy magnetic thin film is brought into contact with nitric acid, then heat treated to form an oxide layer on the surface, and then a lubricant is impregnated (British Patent No. 126,517)
No. 5): A method is known in which Cr is deposited on the surface of a ferromagnetic metal thin film in a moderate vacuum to form a layer of a mixture of Cr and Cr oxide (Japanese Patent Publication No. 4393/1983). .
さらに保護層として一酸化シリコン蒸着膜を用いること
が米国特許3109746号、同3353166号、特
開昭50−80102号等により知られている。Further, it is known from US Pat. No. 3,109,746, US Pat. No. 3,353,166, and Japanese Patent Application Laid-open No. 80102/1983 to use a silicon monoxide vapor deposited film as a protective layer.
しかしながら一酸化シリコン膜あるいは二酸化シリコン
膜の保護層では耐摩耗性、耐久性である程度の改善はみ
られるものの、まだ充分ではなく、走行性の点ではまだ
問題がある。However, although a protective layer of a silicon monoxide film or a silicon dioxide film shows some improvement in wear resistance and durability, it is still not sufficient and there are still problems in terms of runnability.
さらに上記シリコン酸化膜は非導電性であるため高速度
の磁気記録システムにおける静電気の放散が充分でない
という欠点を有している。Furthermore, since the silicon oxide film is non-conductive, it has the disadvantage that static electricity cannot be sufficiently dissipated in high-speed magnetic recording systems.
本発明の目的は従来の硬質金属層あるいは酸化物層より
もすぐれた耐摩耗性、耐久性、走行性を有する保護層の
形威された磁気記録媒体を提供することにある。An object of the present invention is to provide a magnetic recording medium with a protective layer having better wear resistance, durability, and runnability than conventional hard metal layers or oxide layers.
すなわち本発明は電気メッキ、無電解メッキ、気相メッ
キ、スパッタリング、蒸着、イオンプレーテング等の方
法によって形成された強磁性金属?膜表面上にシリコン
ーシリコン酸化物より戒る保護層を形成せしめてなる耐
摩耗性、耐腐蝕性にすぐれ、且つ走行性の良好な強磁性
金属薄膜より成る磁気記録媒体に関するものである。That is, the present invention relates to ferromagnetic metals formed by methods such as electroplating, electroless plating, vapor phase plating, sputtering, vapor deposition, and ion plating. The present invention relates to a magnetic recording medium made of a ferromagnetic metal thin film having excellent wear resistance, corrosion resistance, and good running properties, which is formed by forming a protective layer made of silicon-silicon oxide on the film surface.
本発明においてシリコンーシリコン酸化物より或る保護
層は10−3〜5×10−5Torrの圧力の空気中で
占める酸化性気体雰囲気中にてシリコンを融点まで加熱
し、蒸発させて、強磁性金属薄膜上に析出させることに
より得られる。In the present invention, a protective layer made of silicon-silicon oxide is formed by heating silicon to its melting point in an oxidizing gas atmosphere in the air at a pressure of 10-3 to 5 x 10-5 Torr and evaporating it to form a ferromagnetic layer. Obtained by depositing on a metal thin film.
析出速度は500人/See,以下が良い。The deposition rate is preferably 500 persons/See or less.
10−3X5X10−5Torrの真空圧においては蒸
発中のシリコン原子の一部と反応する充分な酸素が存在
し、強磁性金属薄膜上にはシリコンーシリコン酸化物と
して形成され、これが良い耐耗耗性、耐腐蝕性、走行性
を与えるものである。At a vacuum pressure of 10-3X5X10-5 Torr, there is enough oxygen to react with some of the silicon atoms during evaporation, forming silicon-silicon oxide on the ferromagnetic metal thin film, which has good wear resistance. , corrosion resistance, and running properties.
もし空気ではなしに純粋な酸素を用いる時には、上記圧
力は約1/5だげ低下させることにより所望の保護層が
得られる。If pure oxygen is used instead of air, the pressure can be reduced by about 1/5 to obtain the desired protective layer.
本発明のシリコンーシリコン酸化物層は
Si −SiOX(1≦Xく2)の組成を有するもので
あろうと考えられる。It is believed that the silicon-silicon oxide layer of the present invention will have a composition of Si-SiOX (1≦X×2).
保護層として設けるシリコンーシリコン酸化物層の厚さ
は、充分な保護作用の得られる事、磁気記録層用と磁気
ヘッドとの間隙によるスペーシングロスによって出力の
低下しない事、等の条件によって約0.005〜0.3
μm1好ましくは0.01〜0.2μmの範囲が良い。The thickness of the silicon-silicon oxide layer to be provided as a protective layer is determined by the following conditions: to obtain a sufficient protective effect, and to avoid a decrease in output due to spacing loss due to the gap between the magnetic recording layer and the magnetic head. 0.005-0.3
μm1 is preferably in the range of 0.01 to 0.2 μm.
本発明に係る強磁性金属層としては鉄、コバルト、ニッ
ケルその他の強磁性金属あるいはFe −Co , F
e −Ni, Co −Ni, Fe − Si, F
e −Rh、Fe−V、Co −P , Co −B
, Co −Si. eo一■、Co−Y,Co−La
,Co−Ce,Co−Pr、Co−Sm,Co−Mn,
Fe−co−Ni,Co−Ni−P,Co−Ni−B,
Co−Ni−Ag,Co−Ni−Nd , Co −N
i −Ce, Co −Ni −Zn, Co−Ni−
Cu,Co−Ni−Hg,Co−Ni −W、Co −
Ni −Re, Co −Mn −P , Co −Z
n −P ,Co−Pb−P,Co−Sm−Cu,Co
−Ni−Zn−P , Co −Ni −Mn −P等
の強磁性合金をべ一パーデポジション法あるいはメッキ
法によって薄膜状に形成せしめたものである。The ferromagnetic metal layer according to the present invention may be iron, cobalt, nickel or other ferromagnetic metals, or Fe-Co, F
e-Ni, Co-Ni, Fe-Si, F
e-Rh, Fe-V, Co-P, Co-B
, Co-Si. eoichi ■, Co-Y, Co-La
, Co-Ce, Co-Pr, Co-Sm, Co-Mn,
Fe-co-Ni, Co-Ni-P, Co-Ni-B,
Co-Ni-Ag, Co-Ni-Nd, Co-N
i -Ce, Co -Ni -Zn, Co-Ni-
Cu, Co-Ni-Hg, Co-Ni-W, Co-
Ni-Re, Co-Mn-P, Co-Z
n-P, Co-Pb-P, Co-Sm-Cu, Co
A ferromagnetic alloy such as -Ni-Zn-P or Co-Ni-Mn-P is formed into a thin film by a vapor deposition method or a plating method.
ペーパーデポジション法とは気体あるいは真空空間中に
おいテ析出させようという物質またはその化合物を蒸気
あるいはイオン化した蒸気として基体上に析出させる方
法で真空蒸着法、スパッタリング法、イオンプレーティ
ング法、化学気相メッキ( ChemicalVapo
r Deposition)法等がこれに相当する。Paper deposition method is a method in which a substance or its compound is deposited on a substrate as vapor or ionized vapor in a gas or vacuum space. Plating (Chemical Vapo
This method corresponds to the method such as the rDeposition method.
メッキ法とは電気メッキ法あるいは無電解メッキ法等の
液相より基体上に物質を析出させる方法をいう。The plating method refers to a method of depositing a substance onto a substrate from a liquid phase, such as electroplating or electroless plating.
ペーパーデポジション法による形或法については例えば
L. Holland著” Vacum Deposi
tionof Thin Film” (Chapm
an & Hall Ltd.1 9 5 6 )
: L. I,Maissel & R, Gla
ng共編”Handbook of Thin
Film Technology ”(Me Graw
−Hill Co.、1 9 7 0 ) ;米国特
許2671034号;同3329601号:33426
32号;同3342633号:同3516860号:同
3615911号;同36.25849号;同3700
500号;同3772174号;同3775179号;
同3787237号;同3856579号等の明細書に
述べられている。For example, L. "Vacum Deposit" by Holland
tion of Thin Film” (Chapm
an & Hall Ltd. 1 9 5 6)
:L. I, Maissel & R, Gla
co-edited by ng “Handbook of Thin”
Film Technology” (Me Graw
-Hill Co. , 1970); US Pat. No. 2,671,034; US Pat. No. 3,329,601: 33426
No. 32; No. 3342633: No. 3516860: No. 3615911; No. 36.25849; No. 3700
No. 500; No. 3772174; No. 3775179;
It is described in specifications such as No. 3787237; No. 3856579.
さらにメッキ法による形戒法については例えばW, G
01di6著”MetallicCoating o
f Plastics”( Electro一Che
m ical Publications Ltd
.、1968);米国特許3116159号;同313
8479号:同3219471号;同3227635号
;同3238061号,同3267017号;同335
3986号;同3360397号;同3362893号
;同3416932号;同3446657号;同354
9417号;同3578571号;同3637471号
;同3672968号等の明細書に記述されている。Furthermore, regarding the form of precepts using the plating method, for example, W, G
Written by 01di6 “MetallicCoating o”
f Plastics” (Electro-Che
mical Publications Ltd
.. , 1968); U.S. Patent No. 3,116,159;
No. 8479: No. 3219471; No. 3227635; No. 3238061, No. 3267017; No. 335
No. 3986; No. 3360397; No. 3362893; No. 3416932; No. 3446657; No. 354
It is described in specifications such as No. 9417; No. 3578571; No. 3637471; No. 3672968.
非磁性、可撓性支持体の厚さは約4〜50μmで、強磁
性金属層の膜厚は約0.02〜5μm、好ましくは0.
05〜2μ班が良い。The thickness of the non-magnetic, flexible support is about 4 to 50 μm, and the thickness of the ferromagnetic metal layer is about 0.02 to 5 μm, preferably 0.02 to 5 μm.
05~2μ group is good.
本発明に係る支持体としては酢酸セルローズ;ニトロセ
ルローズ;ポリアミド:ポリメチルメタクリレート;ポ
リテトラフルオルエチレン:ポリトリフルオルエチレン
;エチレン、フロピレンのようなα−オレフインの重合
体あるいは共重合体;塩化ビニルの重合体あるいは共重
合体;ポリ塩化ビニリデン;ポリカーボネーl・;ポリ
イミド;ポリエチレンテレフタレート、ポリエチレンナ
フタレートのようなポリエステル類といったプラスチッ
クベース、さらにはアルミニウム、黄銅、ステンレスの
ような金属類あるいはガラス、セラミツク等が用いられ
る。Supports according to the present invention include cellulose acetate; nitrocellulose; polyamide: polymethyl methacrylate; polytetrafluoroethylene: polytrifluoroethylene; polymers or copolymers of α-olefins such as ethylene and flopylene; vinyl chloride. Polymers or copolymers; polyvinylidene chloride; polycarbonate; polyimide; plastic bases such as polyesters such as polyethylene terephthalate and polyethylene naphthalate, as well as metals such as aluminum, brass, and stainless steel, or glass and ceramics. etc. are used.
支持体の形状についてもテーフ、シート、カード、デス
ク、ドラムいずれでも良い。The shape of the support may be tape, sheet, card, desk, or drum.
メッキ、蒸着等の方法によって形成された強磁性金属薄
膜はそのままでは磁気ヘッドとの摩耗によって走行不安
定となったり、けずれて傷がついたり、又けずれ屑がヘ
ッドに付着・蓄積して磁気記録の出力が著しく低下する
ことが多々ある。If the ferromagnetic metal thin film formed by methods such as plating or vapor deposition is left as it is, it may become unstable due to abrasion with the magnetic head, become scratched and scratched, and debris may adhere to and accumulate on the head. The output of magnetic recording often drops significantly.
さらに高温、多湿の環境下に長時間曝しておくと、金属
膜の分解、水酸化物の形成および腐蝕等の作用により表
面性の劣化、飽和磁束密度の減少が著しく磁気記録媒体
として使用不可能となる。Furthermore, if exposed to a high temperature and high humidity environment for a long time, the metal film will decompose, hydroxides will form, and corrosion will occur, resulting in a significant deterioration of the surface quality and a decrease in the saturation magnetic flux density, making it unusable as a magnetic recording medium. becomes.
本発明による保護層を有する磁気記録媒体は上記の現象
が著しく改良され良好な磁気記録媒体である。The magnetic recording medium having the protective layer according to the present invention is a good magnetic recording medium in which the above phenomenon is significantly improved.
さらに可撓性支持体上に蒸着、スパッタリンク、イオン
プレーテング等によって強磁性金属薄膜を形成せしめた
場合、あるいはある種のメッキ浴、メッキ条件にて強磁
性金属薄膜を形成せしめた場合に金属薄膜の内部応力の
ため、強磁性金属薄膜側を凹面とするようにカールが発
生し、磁気記録媒体として使用するうえで好ましくない
。Furthermore, when a ferromagnetic metal thin film is formed on a flexible support by vapor deposition, sputter linking, ion plating, etc., or when a ferromagnetic metal thin film is formed in a certain plating bath or plating condition, the metal Due to the internal stress of the thin film, curling occurs so that the ferromagnetic metal thin film side becomes a concave surface, which is undesirable for use as a magnetic recording medium.
あるいは堅固な支持体上に強磁性薄膜を形成せしめた場
合には、金属薄膜の内部応力のため磁性薄膜の密着が悪
くなるという問題がある。Alternatively, when a ferromagnetic thin film is formed on a rigid support, there is a problem that the adhesion of the magnetic thin film becomes poor due to the internal stress of the metal thin film.
本発明によるシリコンーシリコン酸化物による保護膜を
形成せしめると可撓性支持体の場合にはカールが除去さ
れて磁気ヘッドとの接触状態が改良され、堅固な支持体
の場合にはシリコンーシリコン酸化物の保護膜の内部応
力と強磁性金属薄膜の内部応力とがバランスするため密
着は極めて良くなるものである。Forming a silicon-silicon oxide protective film according to the present invention eliminates curl in the case of a flexible support and improves the contact condition with the magnetic head, and in the case of a rigid support, silicon-silicon Since the internal stress of the oxide protective film and the internal stress of the ferromagnetic metal thin film are balanced, the adhesion is extremely good.
次に実施例をもって本発明を具体的に説明するが、本発
明はこれらに限定されるものではない。EXAMPLES Next, the present invention will be specifically explained with reference to Examples, but the present invention is not limited thereto.
実施例 1
連続メッキ装置により1/2インチ幅、25μ胤厚のテ
ープ状ポリエチレンテレフタレートフイルム(Myla
rフイルム、E.I,du pont deNem
ours & co.製)上に下記のようなメッキ液(
水溶液)、メッキ条件にてCo −P ( Co :9
8%、P:2%)磁性膜を0.20μ扉厚となるように
無電解メンキした。Example 1 A tape-shaped polyethylene terephthalate film (Myla
r film, E. I, du pont de Nem
ours & co. Co., Ltd.) on top of the following plating solution (
aqueous solution), Co-P under plating conditions (Co:9
8%, P: 2%) The magnetic film was electrolessly mended to a thickness of 0.20 μm.
無電解メッキの活性化前処理液としては米国Shipl
ey社(2300Washington St.、N
ewton, Massachusetts)のCat
alyst 6 F液およびAccelerator
1 9液を使用した。US Shipl is used as an activation pretreatment solution for electroless plating.
ey Co., Ltd. (2300 Washington St., N.
Cat in Ewton, Massachusetts)
alyst 6 F solution and Accelerator
19 liquids were used.
塩化コバルト(COCI。Cobalt chloride (COCI.
−6H20) 9.5f/7次亜リン酸ンーダ
(NaH2PO2・H20)5゜31/l塩化アンモニ
ウム 10.7?/1クエン酸
26.5′?/lホウ酸
30.9グ/.epH : 7.3、液温:8
0℃
次にこのテープを真空室中に入れ、8 X 1 0 −
’Torrの圧力の空気中でシリコンを蒸発させ、メッ
キ磁性膜上に0.07μmのシリコンーシリコン酸化物
より成る保護層を形或した。-6H20) 9.5f/7 Hypophosphorous acid (NaH2PO2・H20) 5°31/l Ammonium chloride 10.7? /1 citric acid
26.5′? /l boric acid
30.9g/. epH: 7.3, liquid temperature: 8
0°C Next, this tape was placed in a vacuum chamber and 8 × 10 −
Silicon was evaporated in air at a pressure of 'Torr to form a 0.07 μm protective layer of silicon-silicon oxide on the plated magnetic film.
こうして得られた磁気テープ(試料Aとする)を統一■
形VTR(SONY Corp.製AV8700型)
にかげたところ走行は滑らかで安定した出力が得られた
。The magnetic tape thus obtained (referred to as sample A) was unified.■
VTR (AV8700 manufactured by SONY Corp.)
On the surface, the running was smooth and stable output was obtained.
さらに磁気テープの同一個所を磁気ヘッドと摺接させ、
磁性層に傷が生じる迄の時間を測定したところ下記の第
1表のようであった。Furthermore, the same part of the magnetic tape is brought into sliding contact with the magnetic head,
The time required for scratches to appear on the magnetic layer was measured, and the results were as shown in Table 1 below.
比較のために保護層を形成させなかった磁気テープ(試
料B)および保護層として10−5T orrの真空中
で一酸化シリコン(Sin)を蒸発させ磁性メッキ層上
に0.07μmの一酸化シリコン膜を形威させた磁気テ
ープ(試料C)も同時に測定した。For comparison, a magnetic tape with no protective layer formed (Sample B) and a 0.07 μm silicon monoxide layer formed on the magnetic plating layer by evaporating silicon monoxide (Sin) in a vacuum of 10-5 Torr as a protective layer. A magnetic tape with a film (Sample C) was also measured at the same time.
このようにシリコンーシリコン酸化物の保護層を設けた
試料は耐摩耗性にすぐれていることが判明した。It was found that the sample provided with the silicon-silicon oxide protective layer has excellent wear resistance.
実施例 2
真空蒸着装置中に22μm厚のポリエチレンテレフタレ
ートフイルムを設置し、Co(95重量%)−V(5重
量%)の合金を蒸発源より5.0×10−6Torrの
真空中該フイノレム上に蒸着せしめ0.3μmの強磁性
金属薄膜を形威せしめた。Example 2 A 22 μm thick polyethylene terephthalate film was placed in a vacuum evaporation apparatus, and a Co (95% by weight)-V (5% by weight) alloy was deposited on the film in a vacuum of 5.0 x 10-6 Torr from an evaporation source. A ferromagnetic metal thin film of 0.3 μm was formed by vapor deposition.
こうしてできた試料(試料D)は磁性薄膜側を凹面とす
るようにカールしており、統一■形VTR(実施例1参
照)にかかけたところ走行性が悪く、ビデオトラックの
エッジに相当する部分の磁性薄膜が剥離してしまった。The sample thus produced (Sample D) was curled so that the magnetic thin film side was concave, and when it was applied to a unified ■-type VTR (see Example 1), it had poor running properties, and the surface corresponded to the edge of a video track. The magnetic thin film in some areas has peeled off.
強磁性金属薄膜を上記のように形戒した後、真空室中で
二一ドルバルブを通じて空気を2×10−″T orr
となる迄入れ、実施例1と同様にしてシリコンーシリコ
ン酸化物の保護層を0.1μ扉厚となるよう形成せしめ
た試料(試料E)はカールは全然無く前記のVTRでの
走行性も良好であった。After forming the ferromagnetic metal thin film as described above, air was pumped through a 21 dollar valve in a vacuum chamber to 2×10−″ Torr.
The sample (sample E) in which a protective layer of silicon-silicon oxide was formed to a thickness of 0.1 μm in the same manner as in Example 1 had no curling at all and had good runnability in the VTR described above. It was good.
同一個所を磁気ヘッドと摺接させたところ280秒以上
経過しても傷が生じなかった。When the same location was brought into sliding contact with a magnetic head, no scratches were observed even after 280 seconds or more.
これに対し試料Dは12秒足らずで磁性薄膜の離脱が生
じた。On the other hand, in sample D, the magnetic thin film detached in less than 12 seconds.
さらに試料DおよびEについて、耐腐蝕性を調べたとこ
ろ第1図に示すような結果であった。Furthermore, when the corrosion resistance of Samples D and E was investigated, the results were as shown in FIG.
第1図は試料を60℃、90%相対湿度の環境中に保持
した時の飽和磁束密度(Bm )の時間変化を示すもの
で縦軸は飽和磁束密度(Bm)の当初の飽和磁束密度(
Bmo)に対する比を百分率で、横軸は60℃、90%
相対湿度中の保持過日数である。Figure 1 shows the change in saturation magnetic flux density (Bm) over time when a sample is kept in an environment of 60°C and 90% relative humidity. The vertical axis is the initial saturation magnetic flux density (Bm).
Bmo) as a percentage; the horizontal axis is 60°C, 90%
Number of days kept in relative humidity.
これから明らかのようにシリコンシリコン酸化物の保護
層を設けたもの(試料E)は耐腐蝕性が改善されている
ことが確認された。As is clear from this, it was confirmed that the corrosion resistance of the sample provided with the protective layer of silicon silicon oxide (Sample E) was improved.
しかも試料表面の変色、ピンホールの増加についても試
料Eは少ないことも判明した。Moreover, it was also found that sample E had less discoloration on the sample surface and less increase in pinholes.
実施例 3
円板状の銅基板にあらかじめ脱脂・水洗処理を充分行な
った後下記の電気メッキ浴にて、磁性メッキを行なった
。Example 3 A disk-shaped copper substrate was thoroughly degreased and washed with water beforehand, and then magnetically plated in the following electroplating bath.
硫酸ニッケル
(NiSO4・7H20)30ク/′e
塩化ニッケル
( N i C l 2・6H20) 5”’硫
酸コバルト
(COSO4−’7−H,,0) 3”/’塩化
コバルト
(coCl2・6H20)5?/l
硫酸銅(CuS04−5H20 )
ホウ酸
ホルマリン
■・5−ナフタレン・ジ・
スルホン酸ナトリウム
0.25y′/l
7.5 ?/l
O,l cc/l
0.25グ/l
H二5.0、液温:40℃、
し梨流密度 0.6A/dm
Co −Ni −Cu ( Co 6 7%、Ni32
%、Cu1%)の強磁性薄膜が0.3μ扉形成された。Nickel sulfate (NiSO4.7H20) 30k/'e Nickel chloride (NiCl2.6H20) 5"'Cobalt sulfate (COSO4-'7-H,,0) 3"/'Cobalt chloride (coCl2.6H20) 5? /l Copper sulfate (CuS04-5H20) Formalin borate■・5-naphthalene di・sodium sulfonate 0.25y'/l 7.5 ? /l O,l cc/l 0.25g/l H25.0, liquid temperature: 40℃, flow density 0.6A/dm Co-Ni-Cu (Co6 7%, Ni32
%, Cu1%) was formed with a thickness of 0.3μ.
次にこれに実施例1と同様にしてシリコン酸化物の保護
層を0.1μm厚となるよう形成せしめた。Next, a protective layer of silicon oxide was formed thereon to a thickness of 0.1 μm in the same manner as in Example 1.
セロテープによる剥離テストで密着性を調べたところシ
リコンーシリコン酸化物の保護層を設けたもの(試料F
)は密着性は極めて良好であったが、保護層を設けなか
ったもの(試料G)の密着性は悪かった。The adhesion was examined by a peel test using cellophane tape, and it was found that the product with a protective layer of silicon-silicon oxide (sample F)
) had extremely good adhesion, but the adhesion of the sample without a protective layer (sample G) was poor.
直径1/4インチのタングステンカーバイトの球を用い
たTabor式摩耗試験機にて試料の耐摩耗性を測定し
た。The abrasion resistance of the sample was measured using a Tabor type abrasion tester using a tungsten carbide ball having a diameter of 1/4 inch.
比較のために保護層として10’Torrの真空中で一
酸化シリコン(Sin)を蒸発させ磁性メッキ上に0.
1μ舟の一酸化シリコン膜を形或させた試料(試料H)
についても測定した。For comparison, silicon monoxide (Sin) was evaporated in a vacuum of 10'Torr as a protective layer and 0.00% was deposited on the magnetic plating.
A sample with a silicon monoxide film of 1 μm size (sample H)
were also measured.
タングステンカーバイトの球を試料に接触移動させ試料
の傷が生じる迄のパス回数を調べたところ下記の第2表
のようであった。When a tungsten carbide ball was brought into contact with a sample and the number of passes required until the sample was scratched was investigated, the results are shown in Table 2 below.
これから明らかのように本発明のシリコンーシリコン酸
化物の保護層を設けたもの(試料F)は耐摩耗性が改善
されている。As is clear from this, the wear resistance of the specimen provided with the silicon-silicon oxide protective layer of the present invention (sample F) is improved.
実施例 4
25μm厚のポリイミドベース( Kaptonフイ/
L/A、E. I. du Pont de N
emours & Co.製)上にCo−Si( C
o 9 0%、SilO%)の磁性膜をイオンプレーテ
イング法により0.15μmの膜厚となるよう形或させ
た。Example 4 25 μm thick polyimide base (Kapton fi/
L/A, E. I. du Pont de N
emours & co. Co-Si (C
A magnetic film of 0.90%, SilO%) was formed to a thickness of 0.15 μm by ion plating.
イオンプレーテングはアルゴンガス圧0. 0 1 T
orr 、加速電圧2KV、基板温度80℃にて実施し
た。The ion plating is done at argon gas pressure of 0. 0 1 T
The test was carried out at an acceleration voltage of 2 KV and a substrate temperature of 80°C.
次に真空室内を10’Torr迄真空排気した後、ニー
ドルバルブより空気を導入して8X10−5Torrと
し、実施例1と同様にしてシリコンーシリコン酸化物の
保護層を0.05μmの厚さとなるように形成させた(
試料■)。Next, after evacuating the vacuum chamber to 10' Torr, air was introduced through a needle valve to make the pressure 8 x 10-5 Torr, and a protective layer of silicon-silicon oxide was formed to a thickness of 0.05 μm in the same manner as in Example 1. It was formed like this (
Sample ■).
保護層を形成させないもの(試料J)は金属薄膜側を凹
面とするようにカールが生じているが、保護層を形成さ
せるとカールは無くなった。The sample on which the protective layer was not formed (sample J) had curls so that the metal thin film side had a concave surface, but when the protective layer was formed, the curls disappeared.
試料■、Jおよび保護層として0.05μ瓶厚の一酸化
シリコン(Sin)膜を形或させた試料Kについて磁気
ヘッドと摺接させ磁性層に傷が生じる迄の時間を測定し
たところ下記の第3表のようであった。Samples ■, J, and sample K, which had a silicon monoxide (Sin) film with a thickness of 0.05 μm formed as a protective layer, were brought into sliding contact with a magnetic head and the time until scratches appeared on the magnetic layer was measured, and the following results were obtained. It was as shown in Table 3.
以上の実施例により本発明のシリコンーシリコン酸化物
の保護層を設けた磁気記録体は耐摩耗性にすぐれている
ことが確認された。From the above examples, it was confirmed that the magnetic recording medium provided with the silicon-silicon oxide protective layer of the present invention has excellent wear resistance.
第1図は本発明による磁気記録媒体の耐摩蝕性の効果を
示すためのグラフである。FIG. 1 is a graph showing the effect of the wear resistance of the magnetic recording medium according to the present invention.
Claims (1)
において、10 ” 〜5X10 ’ Torrの
圧力の空気中で占める酸素分圧に相当する酸化性気体雰
囲気中にてシリコンを蒸発せしめ、強磁性金属薄膜表面
上にシリコンーシリコン酸化物より成る保護層を形成せ
しめたことを特徴とする磁気記録媒体。1. In a magnetic recording medium having a ferromagnetic metal thin film layer as a magnetic recording layer, silicon is evaporated in an oxidizing gas atmosphere corresponding to the partial pressure of oxygen in air at a pressure of 10'' to 5X10' Torr to form a ferromagnetic layer. A magnetic recording medium characterized in that a protective layer made of silicon-silicon oxide is formed on the surface of a metal thin film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4403676A JPS5837614B2 (en) | 1976-04-16 | 1976-04-16 | magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4403676A JPS5837614B2 (en) | 1976-04-16 | 1976-04-16 | magnetic recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52127203A JPS52127203A (en) | 1977-10-25 |
JPS5837614B2 true JPS5837614B2 (en) | 1983-08-17 |
Family
ID=12680390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4403676A Expired JPS5837614B2 (en) | 1976-04-16 | 1976-04-16 | magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5837614B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0612568B2 (en) * | 1984-11-12 | 1994-02-16 | 株式会社東芝 | Magnetic recording medium |
-
1976
- 1976-04-16 JP JP4403676A patent/JPS5837614B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS52127203A (en) | 1977-10-25 |
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